TCET110.

(G) up to TCET4100
Vishay Telefunken

Optocoupler with Phototransistor Output

Description
The TCET110./ TCET2100/ TCET4100 consists of a
phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 4-lead up to 16-lead plastic
dual inline package.
The elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance be-
tween input and output for highest safety
requirements.

Applications
Circuits for safe protective separation against electri-
cal shock according to safety class II (reinforced 14925
isolation):

D For appl. class I – IV at mains voltage ≤ 300 V

D For appl. class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:

Coll. Emitter
Switch-mode power supplies, line receiver, com-
puter peripheral interface, microprocessor
system interface.

13929
VDE Standards
These couplers perform safety functions according to Anode Cath.
the following equipment standards: 4 PIN

D VDE 0884 8 PIN

Optocoupler for electrical safety requirements 16 PIN

D IEC 950/EN 60950

Office machines (applied for reinforced isolation
for mains voltage ≤ 400 VRMS)
D VDE 0804
Telecommunication apparatus and data
processing
D IEC 65
C
Safety for mains-operated electronic and related
household apparatus

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TCET110.(G) up to TCET4100
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Order Instruction
Ordering Code CTR Ranking Remarks
TCET1100/ TCET1100G1) 50 to 600% 4 Pin = Single channel
TCET1101/ TCET1101G1) 40 to 80% 4 Pin = Single channel
TCET1102/ TCET1102G 1) 63 to 125% 4 Pin = Single channel
TCET1103/ TCET1103G1) 100 to 200% 4 Pin = Single channel
TCET1104/ TCET1104G1) 160 to 320% 4 Pin = Single channel
TCET1105/ TCET1105G 1) 50 to 150% 4 Pin = Single channel
TCET1106/ TCET1106G1) 100 to 300% 4 Pin = Single channel
TCET1107/ TCET1107G1) 80 to 160% 4 Pin = Single channel
TCET1108/ TCET1108G 1) 130 to 260% 4 Pin = Single channel
TCET1109/ TCET1109G1) 200 to 400% 4 Pin = Single channel
TCET2100 50 to 600% 8 Pin = Dual channel
TCET4100 50 to 600% 16 Pin = Quad channel
1) G = Leadform 10.16 mm; G is not marked on the body

Features
Approvals: D Creepage current resistance according
to VDE 0303/IEC 112
D BSI: BS EN 41003, BS EN 60095 (BS 415), Comparative Tracking Index: CTI ≥ 175
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402 D Thickness through insulation ≥ 0.75 mm
D FIMKO (SETI): EN 60950, D Internal creepage distance > 4 mm
Certificate number 11027
General features:
D Underwriters Laboratory (UL) 1577 recognized,
file number E-76222 – Double Protection D CTR offered in 9 groups
D CSA (C-UL) 1577 recognized D Isolation materials according to UL94-VO
file number E- 76222 - Double Protection
D Pollution degree 2
D VDE 0884, Certificate number 115667 (DIN/VDE 0110 / resp. IEC 664)
D Climatic classification 55/100/21 (IEC 68 part 1)
VDE 0884 related features:
D Special construction:
D Rated impulse voltage (transient overvoltage) Therefore, extra low coupling capacity of
VIOTM = 8 kV peak typical 0.2 pF, high Common Mode Rejection
D Isolation test voltage D Low temperature coefficient of CTR
(partial discharge test voltage) Vpd = 1.6 kV D G = Leadform 10.16 mm;
D Rated isolation voltage (RMS includes DC) provides creepage distance > 8 mm,
VIOWM = 600 VRMS (848 V peak) for TCET2100/ TCET4100 optional;
D Rated recurring peak voltage (repetitive) suffix letter ‘G’ is not marked on the optocoupler
VIORM = 600 VRMS D Coupling System U

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Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage VR 6 V
Forward current IF 60 mA
Forward surge current tp ≤ 10 ms IFSM 1.5 A
Power dissipation Tamb ≤ 25°C PV 100 mW
Junction temperature Tj 125 °C

Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector emitter voltage VCEO 70 V
Emitter collector voltage VECO 7 V
Collector current IC 50 mA
Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA
Power dissipation Tamb ≤ 25°C PV 150 mW
Junction temperature Tj 125 °C

Coupler
Parameter Test Conditions Symbol Value Unit
Isolation test voltage (RMS) t = 1 min VIO 5 kV
Total power dissipation Tamb ≤ 25°C Ptot 250 mW
Operating ambient temperature Tamb –40 to +100 °C
range
Storage temperature range Tstg –55 to +125 °C
Soldering temperature 2 mm from case t ≤ 10 s Tsd 260 °C

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Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = ± 50 mA VF 1.25 1.6 V
Junction capacitance VR = 0 V, f = 1 MHz Cj 50 pF

Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 1 mA VCEO 70 V
Emitter collector voltage IE = 100 mA VECO 7 V
Collector emitter cut-off VCE = 20 V, If = 0, E = 0 ICEO 10 100 nA
current

Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter IF = 10 mA, IC = 1 mA VCEsat 0.3 V
saturation voltage
Cut-off frequency VCE = 5 V, IF = 10 mA, fc 110 kHz
RL = 100 W
Coupling capacitance f = 1 MHz Ck 0.3 pF

Current Transfer Ratio (CTR)

Parameter Test Conditions Type Symbol Min. Typ. Max. Unit
IC/IF VCE = 5 V, IF = 5 mA TCET1100(G)/ CTR 0.50 6.0
TCET2100/
TCET4100
IC/IF VCE = 5 V, IF = 10 mA TCET1101(G) CTR 0.40 0.8
TCET1102(G) CTR 0.63 1.25
TCET1103(G) CTR 1.0 2.0
TCET1104(G) CTR 1.6 3.2
IC/IF VCE = 5 V, IF = 1 mA TCET1101(G) CTR 0.13 0.30
TCET1102(G) CTR 0.22 0.45
TCET1103(G) CTR 0.34 0.70
TCET1104(G) CTR 0.56 0.90
IC/IF VCE = 5 V, IF = 5 mA TCET1105(G) CTR 0.5 1.5
TCET1106(G) CTR 1.0 3.0
TCET1107(G) CTR 0.8 1.6
TCET1108(G) CTR 1.3 2.6
TCET1109(G) CTR 2.0 4.0

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Maximum Safety Ratings (according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.

Input (Emitter)
Parameters Test Conditions Symbol Value Unit
Forward current Isi 130 mA

Output (Detector)
Parameters Test Conditions Symbol Value Unit
Power dissipation Tamb ≤ 25°C Psi 265 mW

Coupler
Parameters Test Conditions Symbol Value Unit
Rated impulse voltage VIOTM 8 kV
Safety temperature Tsi 150 °C

Insulation Rated Parameters (according to VDE 0884)

Parameter Test Conditions Symbol Min. Typ. Max. Unit
Partial discharge test voltage – 100%, ttest = 1 s Vpd 1.6 kV
Routine test
Partial discharge
g test voltage
g – tTr = 60 s, ttest = 10 s, VIOTM 8 kV
Lot test (sample test) (see figure 2) Vpd 1.3 kV
Insulation resistance VIO = 500 V RIO 1012 W
VIO = 500 V, RIO 1011 W
Tamb = 100°C
VIO = 500 V, RIO 109 W
Tamb = 150°C
(construction test only)
VIOTM
300
Ptot – Total Power Dissipation ( mW )

t1, t2 = 1 to 10 s
250 Phototransistor t3, t4 = 1 s
Psi ( mW ) ttest = 10 s
200 tstres = 12 s
VPd
150 VIOWM
VIORM
100

50 IR-Diode
Isi ( mA )
0
0 t3 ttest t4
0 25 50 75 100 125 150 t1 tTr = 60 s t2 tstres
13930
94 9182 Tsi – Safety Temperature ( °C ) t

Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884

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Switching Characteristics
Parameter Test Conditions Symbol Typ. Unit
Delay time VS = 5 V, IC = 2 mA, RL = 100 W ((see figure
g 3)) td 3.0 ms
Rise time tr 3.0 ms
Turn-on time ton 6.0 ms
Storage time ts 0.3 ms
Fall time tf 4.7 ms
Turn-off time toff 5.0 ms
Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kW ((see figure
g 4)) ton 9.0 ms
Turn-off time toff 10.0 ms

IF IF +5V 96 11698
0 IF
IC = 2 mA; adjusted through
input amplitude

RG = 50 W
0
t
tp tp
= 0.01
T
tp = 50 ms IC
Channel I
Oscilloscope 100%
90%
Channel II RL = 1 M W
50 W 100 W CL = 20 pF
95 10804

Figure 3. Test circuit, non-saturated operation 10%

0
t
tr

td ts tf

IF IF = 10 mA +5V ton toff

0
IC tp pulse duration ts storage time
RG = 50 W td delay time tf fall time
tp tr rise time toff (= ts + tf) turn-off time
= 0.01 ton (= td + tr) turn-on time
T
tp = 50 ms
Figure 5. Switching times
Channel I
Oscilloscope
Channel II RL > 1 M W
50 W 1 kW CL < 20 pF
95 10843

Figure 4. Test circuit, saturated operation

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Typical Characteristics (Tamb = 25_C, unless otherwise specified)
300 10000
Coupled device
P tot – Total Power Dissipation ( mW )

VCE=20V

ICEO– Collector Dark Current,

250 IF=0
1000

with open Base ( nA )

200
Phototransistor
150 100
IR-diode
100
10
50

0 1
0 40 80 120 0 25 50 75 100
96 11700 Tamb – Ambient Temperature ( °C ) 95 11026 Tamb – Ambient Temperature ( °C )

Figure 6. Total Power Dissipation vs. Figure 9. Collector Dark Current vs. Ambient Temperature
Ambient Temperature

1000.0 100
VCE=5V
IC – Collector Current ( mA )
I F – Forward Current ( mA )

100.0 10

10.0 1

1.0 0.1

0.1 0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 100
96 11862 VF – Forward Voltage ( V ) 95 11027 IF – Forward Current ( mA )

Figure 7. Forward Current vs. Forward Voltage Figure 10. Collector Current vs. Forward Current

2.0 100
CTR rel – Relative Current Transfer Ratio

VCE=5V 20mA
IC – Collector Current ( mA )

IF=5mA IF=50mA
1.5
10 10mA

5mA
1.0

1 2mA
0.5
1mA

0 0.1
–25 0 25 50 75 0.1 1 10 100
95 11025 Tamb – Ambient Temperature ( °C ) 95 10985 VCE – Collector Emitter Voltage ( V )

Figure 8. Relative Current Transfer Ratio vs. Figure 11. Collector Current vs. Collector Emitter Voltage
Ambient Temperature

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VCEsat – Collector Emitter Saturation Voltage ( V )

1.0 10

t on / t off – Turn on / Turn off Time ( m s )

Non Saturated
20% Operation
0.8 8 VS=5V
ton RL=100W
CTR=50%
0.6 6
toff
0.4 4

0.2 2
10%

0 0
1 10 100 0 2 4 6 10
95 11028 IC – Collector Current ( mA ) 95 11030 IC – Collector Current ( mA )

Figure 12. Collector Emitter Saturation Voltage vs.

Figure 14. Turn on / off Time vs. Collector Current
Collector Current

1000
t on / t off – Turn on / Turn off Time ( m s ) 50
CTR – Current Transfer Ratio ( % )

Saturated Operation
VCE=5V 40 VS=5V
RL=1kW
100
30
toff
20
10

10

ton
1 0
0.1 1 10 100 0 5 10 15 20

95 11029 IF – Forward Current ( mA ) 95 11031 IF – Forward Current ( mA )

Figure 13. Current Transfer Ratio vs. Forward Current Figure 15. Turn on / off Time vs. Forward Current

Pin1 Indication Type

ET1100
820UTK63
15081

Date Coupling Company Production

Code System Logo Location
(YM) Indicator
Figure 16. Marking example

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Dimensions of TCET110. in mm

14789

Dimensions of TCET110.G in mm

14792

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Dimensions of TCET2100 in mm

14784

Dimensions of TCET4100 in mm

14783

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Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).

The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

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