AOT12N50/AOB12N50/AOTF12N50

500V, 12A N-Channel MOSFET

General Description Product Summary

The AOT12N50 & AOB12N50 & AOTF12N50 have been VDS 600V@150℃
fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A
process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.52Ω
performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs. 100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT12N50L & AOTF12N50L & AOB12N50L

Top View
TO-263 D
TO-220 TO-220F D2PAK
D

G
S S S
D S
G D G
AOT12N50 AOTF12N50 G AOB12N50
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Symbol AOT12N50/AOB12N50 AOTF12N50 Units
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS ±30 V
Continuous Drain TC=25°C 12 12*
ID
Current TC=100°C 8.4 8.4* A
C
Pulsed Drain Current IDM 48
Avalanche Current C IAR 5.5 A
Repetitive avalanche energy C EAR 454 mJ
Single plused avalanche energy G EAS 908 mJ
MOSFET dv/dt ruggedness 40
dv/dt V/ns
Peak diode recovery dv/dt 5
TC=25°C 250 50 W
PD
Power Dissipation B Derate above 25oC 2 0.4 W/ oC
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds TL 300 °C
Thermal Characteristics
Parameter Symbol AOT12N50/AOB12N50 AOTF12N50 Units
Maximum Junction-to-Ambient A,D RθJA 65 65 °C/W
Maximum Case-to-sink A RθCS 0.5 -- °C/W
Maximum Junction-to-Case RθJC 0.5 2.5 °C/W
* Drain current limited by maximum junction temperature.

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 AOT12N50/AOB12N50/AOTF12N50

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C 500
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=150°C 600 V
BVDSS Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V 0.54 V/ oC
/∆TJ
VDS=500V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
VDS=400V, TJ=125°C 10
IGSS Gate-Body leakage current VDS=0V, VGS=±30V ±100 nΑ
VGS(th) Gate Threshold Voltage VDS=5V ID=250µA 3.3 3.9 4.5 V
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A 0.36 0.52 Ω
gFS Forward Transconductance VDS=40V, ID=6A 16 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.72 1 V
IS Maximum Body-Diode Continuous Current 12 A
ISM Maximum Body-Diode Pulsed Current 48 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1089 1361 1633 pF
Coss Output Capacitance VGS=0V, VDS=25V, f=1MHz 134 167 200 pF
Crss Reverse Transfer Capacitance 10 12.6 15 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.8 3.6 5.4 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 30.7 37 nC
Qgs Gate Source Charge VGS=10V, VDS=400V, ID=12A 7.6 9 nC
Qgd Gate Drain Charge 13.0 16 nC
tD(on) Turn-On DelayTime 29 35 ns
tr Turn-On Rise Time VGS=10V, VDS=250V, ID=12A, 69 83 ns
tD(off) Turn-Off DelayTime RG=25Ω 82 98 ns
tf Turn-Off Fall Time 55.5 67 ns
trr Body Diode Reverse Recovery Time IF=12A,dI/dt=100A/µs,VDS=100V 231 277 ns
Qrr Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V 2.82 3.4 µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=5.5A, VDD=150V, RG=25Ω, Starting TJ=25°C

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AOT12N50/AOB12N50/AOTF12N50

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

24 100
10V
-55°C
6.5V VDS=40V
20

16 10
6V
ID (A)

ID(A)
12 125°C

8 VGS=5.5V 1

25°C
4

0 0.1
0 5 10 15 20 25 30 2 4 6 8 10

VDS (Volts) VGS(Volts)

Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

0.8 3

Normalized On-Resistance
0.7 2.5
VGS=10V
ID=6A
2
RDS(ON) (Ω)

0.6
1.5
0.5
1
VGS=10V
0.4
0.5

0.3 0
0 4 8 12 16 20 24 28 -100 -50 0 50 100 150 200

ID (A) Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage

1.2 1.0E+02

1.0E+01
1.1
BVDSS (Normalized)

40
1.0E+00
125°C
IS (A)

1 1.0E-01
25°C

1.0E-02
0.9
1.0E-03

0.8 1.0E-04
-100 -50 0 50 100 150 200 0.0 0.2 0.4 0.6 0.8 1.0

TJ (°C) VSD (Volts)

Figure 5: Break Down vs. Junction Temperature Figure 6: Body-Diode Characteristics (Note E)

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 AOT12N50/AOB12N50/AOTF12N50

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15 10000
VDS=400V
ID=12A Ciss
12
1000

Capacitance (pF)
Coss
VGS (Volts)

9
100
6
Crss

10
3

0 1
0 5 10 15
20 25 30 35 40 45 0.1 1 10 100
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 100

RDS(ON) 10µs 10µs

10 10 RDS(ON)
limited limited
100µs 100µs
ID (Amps)
ID (Amps)

1ms 1ms
1 1
DC 10ms
10ms
0.1s
DC
0.1 TJ(Max)=150°C 0.1 TJ(Max)=150°C 1s
TC=25°C TC=25°C

0.01 0.01
1 10 100 1000 1 10 100 1000

VDS (Volts) VDS (Volts)

Figure 9: Maximum Forward Biased Safe Operating Figure 10: Maximum Forward Biased Safe
Area for AOT12N50/AOB12N50 (Note F) Operating Area for AOTF12N50 (Note F)

15

12
Current rating ID(A)

0
0 25 50 75 100 125 150
TCASE (°C)
Figure 11: Current De-rating (Note B)

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 AOT12N50/AOB12N50/AOTF12N50

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10
D=Ton/T In descending order
ZθJC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJC=0.5°C/W
1

0.1
PD

0.01 Ton
T
Single Pulse

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT12N50/AOB12N50 (Note F)

10
D=Ton/T In descending order
ZθJC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJC=2.5°C/W

0.1
PD

0.01 Ton
T
Single Pulse

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF12N50 (Note F)

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 AOT12N50/AOB12N50/AOTF12N50

Gate Charge Test Circuit & Waveform

Vgs
Qg

+ 10V
VDC
+ Qgs Qgd
- VDC Vds
DUT -
Vgs
Ig

Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+
Vgs VDC Vdd
Rg -
10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LI AR BVDSS

Id Vds

Vgs +
Vgs VDC Vdd I AR
Rg - Id

DUT
Vgs Vgs

Diode Recovery Tes t Circuit & Waveforms

Vds + Qrr = - Idt

DUT
Vgs

Vds - L Isd IF trr

Isd dI/dt
+ Vdd IRM
Vgs VDC
Vdd
Ig
- Vds

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