AOT11S60/AOB11S60/AOTF11S60

600V 11A α MOS TM Power Transistor

General Description Product Summary

The AOT11S60& AOB11S60 & AOTF11S60 have been VDS @ Tj,max 700V
fabricated using the advanced αMOSTM high voltage IDM 45A
process that is designed to deliver high levels of RDS(ON),max 0.399Ω
performance and robustness in switching applications.
Qg,typ 11nC
By providing low RDS(on), Qg and EOSS along with
Eoss @ 400V 2.7µJ
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT11S60L & AOB11S60L & AOTF11S60L

Top View
TO-263
TO-220 TO-220F(3kVAC;1s) D
D2PAK
D

G
S S
D D S
G G G S
AOT11S60 AOTF11S60 AOB11S60

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol AOT11S60/AOB11S60 AOTF11S60 Units
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS ±30 V
Continuous Drain TC=25°C 11 11*
ID
Current TC=100°C 8 8* A
Pulsed Drain Current C IDM 45
Avalanche Current C IAR 2 A
Repetitive avalanche energy C EAR 60 mJ
Single pulsed avalanche energy G EAS 120 mJ
TC=25°C 178 38 W
PD
Power Dissipation B Derate above 25oC 1.4 0.3 W/ oC
MOSFET dv/dt ruggedness 100
dv/dt V/ns
Peak diode recovery dv/dt H 20
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J TL 300 °C
Thermal Characteristics
Parameter Symbol AOT11S60/AOB11S60 AOTF11S60 Units
Maximum Junction-to-Ambient A,D RθJA 65 65 °C/W
Maximum Case-to-sink A RθCS 0.5 -- °C/W
Maximum Junction-to-Case RθJC 0.7 3.25 °C/W
* Drain current limited by maximum junction temperature.

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 AOT11S60/AOB11S60/AOTF11S60

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C 600 - -
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=150°C 650 700 - V
VDS=600V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current µA
VDS=480V, TJ=150°C - 10 -
IGSS Gate-Body leakage current VDS=0V, VGS=±30V - - ±100 nΑ
VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA 2.8 3.5 4.1 V
VGS=10V, ID=3.8A, TJ=25°C - 0.35 0.399 Ω
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=3.8A, TJ=150°C - 0.98 1.11 Ω
VSD Diode Forward Voltage IS=5.5A,VGS=0V, TJ=25°C - 0.84 - V
IS Maximum Body-Diode Continuous Current - - 11 A
ISM Maximum Body-Diode Pulsed CurrentC - - 45 A
DYNAMIC PARAMETERS
Ciss Input Capacitance - 545 - pF
VGS=0V, VDS=100V, f=1MHz
Coss Output Capacitance - 37.3 - pF
Effective output capacitance, energy
Co(er) - 30.8 - pF
related H
VGS=0V, VDS=0 to 480V, f=1MHz
Effective output capacitance, time
Co(tr) - 93.6 - pF
related I
Crss Reverse Transfer Capacitance VGS=0V, VDS=100V, f=1MHz - 1.42 - pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz - 16.5 - Ω
SWITCHING PARAMETERS
Qg Total Gate Charge - 11 - nC
Qgs Gate Source Charge VGS=10V, VDS=480V, ID=5.5A - 2.8 - nC
Qgd Gate Drain Charge - 3.8 - nC
tD(on) Turn-On DelayTime - 20 - ns
tr Turn-On Rise Time VGS=10V, VDS=400V, ID=5.5A, - 20 - ns
tD(off) Turn-Off DelayTime RG=25Ω - 59 - ns
tf Turn-Off Fall Time - 20 - ns
trr Body Diode Reverse Recovery Time IF=5.5A,dI/dt=100A/µs,VDS=400V - 250 - ns
Irm Peak Reverse Recovery Current IF=5.5A,dI/dt=100A/µs,VDS=400V - 21 - A
Qrr Body Diode Reverse Recovery Charge IF=5.5A,dI/dt=100A/µs,VDS=400V - 3.3 - µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=2A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AOT11S60/AOB11S60/AOTF11S60

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

24 16
10V 10V
20 7V
12
16 7V
6V

ID (A)
ID (A)

6V 8
12

5.5V
8 5.5V
4
5V
4 VGS=4.5V 5V
VGS=4.5V
0
0
0 5 10 15 20
0 5 10 15 20
VDS (Volts) VDS (Volts)
Figure 1: On-Region Characteristics@25°C Figure 2: On-Region Characteristics@125°C

100 1.2
-55°C
VDS=20V

10 0.9
125°C
RDS(ON) (Ω )

VGS=10V
ID(A)

1 0.6

25°C

0.1 0.3

0.01 0.0
2 4 6 8 10 0 5 10 15 20 25

VGS(Volts) ID (A)
Figure 3: Transfer Characteristics Figure 4: On-Resistance vs. Drain Current and
Gate Voltage

3 1.2
Normalized On-Resistance

2.5
VGS=10V
1.1
ID=3.8A
BVDSS (Normalized)

1.5 1

1
0.9
0.5

0 0.8
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
Temperature (°C) TJ (oC)
Figure 5: On-Resistance vs. Junction Temperature Figure 6: Break Down vs. Junction Temperature

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 AOT11S60/AOB11S60/AOTF11S60

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1.0E+02 15

1.0E+01
125°C 12 VDS=480V
1.0E+00 ID=5.5A

9
25°C

VGS (Volts)
1.0E-01
IS (A)

1.0E-02 6

1.0E-03
3
1.0E-04

1.0E-05 0
0.0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16
VSD (Volts) Qg (nC)
Figure 7: Body-Diode Characteristics (Note E) Figure 8: Gate-Charge Characteristics

10000 6

5
Ciss
1000
Eoss(uJ)
Capacitance (pF)

4 Eoss

100 3
Coss

2
10
1
Crss

1 0
0 100 200 300 400 500 600 0 100 200 300 400 500 600
VDS (Volts) VDS (Volts)
Figure 9: Capacitance Characteristics Figure 10: Coss stored Energy

100 100

10µs
RDS(ON) 10µs RDS(ON)
10 10
limited limited
100µs
ID (Amps)

100µs
ID (Amps)

1 DC 1
1ms 1ms
10ms DC 10ms
0.1 0.1 0.1s
TJ(Max)=150°C TJ(Max)=150°C 1s
TC=25°C TC=25°C
0.01 0.01
1 10 100 1000 0.1 1 10 100 1000
VDS (Volts) VDS (Volts)
Figure 11: Maximum Forward Biased Safe Figure 12: Maximum Forward Biased Safe
Operating Area for AOT(B)11S60 (Note F) Operating Area for AOTF11S60(Note F)

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 AOT11S60/AOB11S60/AOTF11S60

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

120 12

90 9

Current rating ID(A)

EAS(mJ)

60 6

30 3

0 0
25 50 75 100 125 150 175 0 25 50 75 100 125 150
TCASE (°C) TCASE (°C)
Figure 13: Avalanche energy Figure 14: Current De-rating (Note B)

10
D=Ton/T In descending order
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJC=0.7°C/W

0.1
PD
0.01
Ton
Single Pulse T
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOT(B)11S60 (Note F)

10
D=Ton/T In descending order
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJC=3.25°C/W

0.1
PD
0.01
Ton
Single Pulse T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOTF11S60 (Note F)

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 AOT11S60/AOB11S60/AOTF11S60

Gate Charge Test Circuit & Waveform

Vgs
Qg

+ 10V
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+
Vgs VDC Vdd
Rg -
10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LI AR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Tes t Circuit & Waveforms

Vds + Qrr = - Idt

DUT
Vgs

Vds - L Isd IF trr

Isd dI/dt
+ IRM
Vgs Vdd
VDC
Vdd
Ig
- Vds

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