This document provides technical data for three NPN power silicon transistor devices: the 2N6249, 2N6250, and 2N6251. It includes maximum ratings, electrical characteristics, thermal characteristics, and qualification levels for the devices. The devices are qualified per MIL-PRF-19500/510 and are silicon NPN power transistors with collector-emitter voltage ratings of 200V, 275V, and 350V respectively. Key parameters specified include current and voltage ratings, gain, switching times, and safe operating area tests.
This document provides technical data for three NPN power silicon transistor devices: the 2N6249, 2N6250, and 2N6251. It includes maximum ratings, electrical characteristics, thermal characteristics, and qualification levels for the devices. The devices are qualified per MIL-PRF-19500/510 and are silicon NPN power transistors with collector-emitter voltage ratings of 200V, 275V, and 350V respectively. Key parameters specified include current and voltage ratings, gain, switching times, and safe operating area tests.
This document provides technical data for three NPN power silicon transistor devices: the 2N6249, 2N6250, and 2N6251. It includes maximum ratings, electrical characteristics, thermal characteristics, and qualification levels for the devices. The devices are qualified per MIL-PRF-19500/510 and are silicon NPN power transistors with collector-emitter voltage ratings of 200V, 275V, and 350V respectively. Key parameters specified include current and voltage ratings, gain, switching times, and safe operating area tests.
This document provides technical data for three NPN power silicon transistor devices: the 2N6249, 2N6250, and 2N6251. It includes maximum ratings, electrical characteristics, thermal characteristics, and qualification levels for the devices. The devices are qualified per MIL-PRF-19500/510 and are silicon NPN power transistors with collector-emitter voltage ratings of 200V, 275V, and 350V respectively. Key parameters specified include current and voltage ratings, gain, switching times, and safe operating area tests.
MAXIMUM RATINGS Ratings Symbol 2N6249 2N6250 2N6251 Units Collector-Emitter Voltage VCEO 200 275 350 Vdc Collector-Base Voltage VCBO 300 375 450 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current IC 10 Adc Base Current IB 5.0 Adc Total Power Dissipation @ TA = +250C (1) 5.5 www.DataSheet.net/ W PT @ TC = +250C (2) 175 W Operating & Storage Temp Range 0 Top, Tstg -55 to +200 C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit TO-3 (TO-204AA)* 0 Thermal Resistance, Junction-to-Case RθJC 1.0 C/W 1) Derate linearly at 34.2 mW/0C for TA > +250C 2) Derate linearly at 1.0 W/0C for TC > +250C *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc; L = 42 mH; F = 30-60 Hz 2N6249 200 V(BR)CEO Vdc (See Figure 3 of MIL-PRF-19500/510) 2N6250 275 2N6251 350 Collector-Emitter Breakdown Voltage IC = 200 mAdc; L = 14 mH; F = 30-60 Hz; RBE = 50Ω (See Figure 3 of MIL-PRF-19500/510) 2N6249 V(BR)CER 225 Vdc 2N6250 300 2N6251 375 Emitter-Base Cutoff Current IEBO µAdc VEB = 6 Vdc 100 Collector-Emitter Cutoff Current VCE = 150 Vdc 2N6249 1.0 ICEO mAdc VCE = 225 Vdc 2N6250 1.0 VCE = 300 Vdc 2N6251 1.0 6 Lake Street, Lawrence, MA 01841 120101 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 1 of 2
Datasheet pdf - http://www.DataSheet4U.co.kr/
2N6249, 2N6250, 2N6251 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS (con’t) Collector-Emitter Cutoff Current VCE = 225 Vdc; VBE = -1.5 Vdc 2N6249 100 ICEX µAdc VCE = 300 Vdc; VBE = -1.5 Vdc 2N6250 100 VCE = 375 Vdc; VBE = -1.5 Vdc 2N6251 100 Collector-Base Cutoff Current VCB = 300 Vdc 2N6249 0.5 ICBO mAdc VCB = 375 Vdc 2N6250 0.5 VCB = 450 Vdc 2N6251 0.5 ON CHARACTERISTICS(3) Forward-Current Transfer Ratio IC = 10 Adc; VCE = 3 Vdc 2N6249 10 50 hFE 2N6250 8 50 2N6251 6 50 Collector-Emitter Saturated Voltage IB = 1.0 Adc; IC = 10 Adc 2N6249 1.5 VCE(sat) Vdc IB = 1.25 Adc; IC = 10 Adc 2N6250 1.5 IB = 1.67 Adc; IC = 10 Adc 2N6251 1.5 Base-Emitter Saturated Voltage IB = 1.0 Adc; IC = 10 Adc 2N6249 2.25 VBE(sat) Vdc IB = 1.25 Adc; IC = 10 Adc 2N6250 2.25 IB = 1.67 Adc; IC = 10 Adc 2N6251 2.25 DYNAMIC CHARACTERISTICS www.DataSheet.net/
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio hfe IC = 1.0 Adc, VCE = 10 Vdc, f = 1 MHz 2.5 15 Output Capacitance Cobo pF VCB = 10 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz 500 SWITCHING CHARACTERISTICS Turn-On Time VCC = 200 Vdc; IC = 10 Adc IB = 1.0 Adc 2N6249 t on 2.0 µs IB = 1.25 Adc 2N6250 2.0 IB = 1.67 Adc 2N6251 2.0 Turn-Off Time VCC = 200 Vdc; IC = 10 Adc µs t IB = 1.0 Adc 2N6249 off 4.5 IB = 1.25 Adc 2N6250 4.5 IB = 1.67 Adc 2N6251 4.5 SAFE OPERATING AREA DC Tests TC = +250C; t = 1 s, 1 cycle (See Figure 5 of MIL-PRF-19500/510) Test 1 VCE = 17.5 Vdc, IC = 10 Adc Test 2 VCE = 30 Vdc, IC = 5.8 Adc Test 3 VCE = 100 Vdc, IC = 0.3 Adc 3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 120101 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 2 of 2
