Lecture 7

Collector Characteristic Curves Collector Characteristic Curves…

IC (mA)

Both VBB and VCC are adjustable
IC Linear Region

VBB is set to produce a specific value of IB while
IB
IB = 30uA VCC = 0 then IC = 0 and VCE = 0 (Base-collector is
VCE
+ + forward biased)
10kΩ IC = βdc IB
- VBB
IE - VC C
As VCC is gradually increased, VCE will increase and
VCE
so will IC
0 (V)
When VCE reaches approximately 0.7V the base-
V − VBE collector junction becomes forward-biased
I B = BB 1V − 0.7V
RB For VBB = 1V IB = = 30 µA
10kΩ
IC reaches its maximum value given by IC = βdcIB
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Collector Characteristic Curves… Cut-off Region

IC (mA)
When IB = 0, the transistor is in cut-off, it does
IB = 50µA not conduct
IB = 40µA

IB = 30µA
Under this condition there is very small collector

IB = 20µA
leakage current, ICE0 due to thermally generated
carriers
IB = 10µA

VCE
0 Linear Breakdown (V)

In cut-off both the base-emitter and base-
Saturation collector junctions are reverse-biased
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Lecture 7

Cut-off Region…. Saturation Region

IC (mA)
When VCC is increased from zero (the base-
collector junction is forward biased), VCE will
ICE0 increase and IC will also increase.
IB = 0
But IC ≠ β IC
VCE
+ +
When VCE reaches approximately 0.7V (for Si) the
- VBB =0 VCC - base-emitter junction becomes forward biased.
ICE0 IB = 0
This collector-emitter voltage is called Saturation
0 VCE (V) voltage (VCE(sat)) and IC reached its full value.
Cut-off Region

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Saturation Region…. Linear Region

IC (mA) IC (mA)
Saturation Region
IB5
IC
IB1 Saturation IB4
IB4
Region Linear Region
VCE +
IB3 IB3
+ IB2 IC = βdcIB
IB2
- VBB VCC - IB1
ICE0 IB = 0 IB1
ICE0 IB = 0
0 VCE (V) VCE
0 VCE(sat) (V)
Cut-off Region
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Lecture 7

Maximum Transistor Ratings Maximum Transistor Ratings…

The transistor, like other electronic devices, has
IC(max) IC
limitations on its operation
Is the maximum collector current

The limitations are stated in the form of maximum a transistor can carry safely VCE
ratings and normally given in Manufacturer’s data
VCE(max)
sheet
Is the maximum voltage that can
safely be applied between

Typical maximum ratings include: PD = IC VCE
collector and emitter

maximum Collector Current, IC(max)

PD(max)

Maximum Collector Emitter Voltage, VCE(max)

Is the maximum power that a IC VCE ≤ PD(max)

Maximum Power Dissipation, PD(max)
transistor can dissipate safely
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Maximum Transistor Ratings… Safe Operating Area (SOAR)

IC (mA) PD(max) PD(max) VCE IC IC (mA)
IC(max) PD(max)
IB5 0.25W 5V 50mA IC(max)
IB5
IB4 0.25W 10V 25mA IB4
Saturation Saturation
Region IB3 0.25W 15V 17.5mA Region IB3
IB2 SOAR
IB2
0.25W 20V 12.5mA
IB1
IB1
ICE0 ICE0
VCE VCE
0 VCE(sat) VCE(max) (V) PD(max) = IC VCE 0 VCE(sat) VCE(max) (V)
Cut-off Region Cut-off Region

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Lecture 7

Derating PD(max) Derating PD(max) ….

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PD(max) is usually specified at 25 C
Example: A certain transistor has PD(max) of 1W at

For higher temperatures, PD(max) is less i.e. it is not 25OC. The derating factor is 5mW/OC. What is the
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easy for the transistor to dissipate heat the PD(max) at a temperature of 70 C ?
surroundings

Data sheets often give derating factors for PD(max) at 70OC = PD(max) at 25OC - Df x ∆T
determining PD(max) at any temperature above = 1W - 5mW/OC x (70OC – 25OC)
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25 C
= 1W – 225mW

The unit for derating factor is W/OC
= 775mW

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