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    1.description: 50 Amps, 60 Volts N-Channel Mosfet

    Uploaded by

    Abhishek
    This document provides information about the KIA50N06 n-channel MOSFET, including its description, features, pin configuration, maximum ratings, thermal and electrical characteristics, test circuits and waveforms, and typical characteristics.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    1.description: 50 Amps, 60 Volts N-Channel Mosfet

    Uploaded by

    Abhishek
    22 views9 pages
    This document provides information about the KIA50N06 n-channel MOSFET, including its description, features, pin configuration, maximum ratings, thermal and electrical characteristics, test circuits and waveforms, and typical characteristics.

    Original Title

    KIA50N06_KIA

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    © © All Rights Reserved

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    This document provides information about the KIA50N06 n-channel MOSFET, including its description, features, pin configuration, maximum ratings, thermal and electrical characteristics, test circuits and waveforms, and typical characteristics.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    22 views9 pages

    1.description: 50 Amps, 60 Volts N-Channel Mosfet

    Uploaded by

    Abhishek
    This document provides information about the KIA50N06 n-channel MOSFET, including its description, features, pin configuration, maximum ratings, thermal and electrical characteristics, test circuits and waveforms, and typical characteristics.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 9

    50 Amps, 60 Volts

    N-CHANNEL MOSFET
    销售电话：13641469108廖先生
    KIA QQ:543158798 50N06
    SEMICONDUCTORS

    1.Description

    The KIA50N06 is three-terminal silicon device with current conduction capability of about
    50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold
    voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching

    2. Features

    RDS(ON)=23mΩ@VGS=10V.
    Ultra low gate charge (typical 30nC)
    Low reverse transfer capacitance
    Fast switching capability
    100％ avalanche energy specified
    Improved dv/dt capability

    3. Pin configuration

    Pin Function

    1 Gate

    2 Drain

    3 Source

    1 of 9

    Free Datasheet http://www.datasheet4u.com/


    50 Amps, 60 Volts

    KIA N-CHANNEL MOSFET 50N06


    SEMICONDUCTORS

    6. Absolute maximum ratings

    Parameter SymbolValueUnit
    Drain to source voltage VDSS60V
    Gate to source voltage VGSS±20V
    TJ=25 ºCID50A
    Continuous drain current
    TJ=100 ºCID35A
    Drain current pulsed (note1)IDM200A
    Single pulsed avalanche energy (note2)EAS480mJ
    Repetitive avalanche energy (note1)EAR13mJ
    Peak diode recovery dv/dt (note3)dv/dt7V/ns
    Total power dissipation(TJ=25 ºC)PD130W
    Derating factor above 25 ºCPD0.9W/ ºC
    Operating junction temperatureTJ-55 ~ +150ºC
    Storage temperatureTSTG-55 ~ +150ºC
    Note: Absolute maximum ratings are those values beyond which the device could be permanently
    damaged.
    Absolute maximum ratings are stress ratings only and functional device operation is not implied.

    3. Thermal resistance

    Parameter Symbol Typ Max Units


    Thermal resistance, junction-to-case θJC 1.15 ºC/W
    Thermal resistance,case-to-sink θCS ºC/W
    Thermal resistance,junction-to-ambient θJA 0.5 ºC/W
    62.5

    2 of 9

    Free Datasheet http://www.datasheet4u.com/


    50 Amps, 60 Volts

    KIA N-CHANNEL MOSFET 50N06


    SEMICONDUCTORS

    7. Electrical characteristics

    (TJ=25°C,unless otherwise notes)


    Parameter Symbol Test conditionsMinTypMaxUnit
    Off characteristics
    Drain-source breakdown voltage
    Breakdown voltage temperature BVDSS VGS=0V,ID=250μA 60 V
    coefficient ID=250μA,
    ΔBVDSS/ΔTJ referenced to 25 ºC 0.07 V/ºC
    VDS=60V,VGS=0V
    1 μA
    Drain-source leakage current IDSS VDS=48V,TC=125 ºC
    1 μA
    VGS=20V,VDS=0V
    Gate-source leakage current 100 nA
    VGS=-20V,VDS=0V
    IGSS -100 nA
    Gate-source leakage Reverse
    On characteristics VDS=VGS, ID=250μA 2.0 4.0 V
    Gate threshold voltageVGS(TH)
    Static drain-source on-state VGS=10V,ID=25A 18 23 mΩ
    RDS(ON)
    resistance
    Dynamic characteristics 900 1220 pF
    Input capacitanceCISS VDS=25V,VGS=0V,f=1MHz 430 550 pF
    Output capacitanceCOSS 80 100 pF
    Reverse transfer capacitanceCRSS
    Switching characteristics
    Turn-on delay timetD(ON) 40 60 ns
    Rise timetR VDD=30V,ID=25A,RG=50Ω 100 200 ns
    Turn-off delay timetD(OFF) (note4,5) 90 180 ns
    Fall timetF 80 160 ns
    Total gate chargeQG 30 40 nC
    Gate-source chargeQGS VDS=48V,VGS=10V,ID=50A 9.6 nC
    Gate-drain charge (miller charge)QGD (note4,5) 10 nC
    Source-drain diode ratings and characteristics
    Diode forward voltageVSD
    VGS=0V,IS=50A 1.5 V
    Integral reverse p-n junction
    diode in the MOSFET
    Continuous source current IS 50 A

    Pulsed source current ISM 200 A

    Reverse recovery timetRRVGS=0V,IS=50A 54 ns


    81 μC
    dIF/dt=100A/μs(note4)Reverse recovery chargeQRR
    Note:1. repetitive rating:pulse width limited by junction temperature
    2.L=5.6mH,IAS=50A,VDD=25V,RG=0Ω,staring TJ=25ºC
    3.ISD<50A,di/dt<300A/μs,VDD<BVDSS,staring TJ=25 ºC
    4.Pulse test:pulse width<300μs,duty cycle<2%
    5.Essentially independent of operating temperature

    3 of 9

    Free Datasheet http://www.datasheet4u.com/


    50 Amps, 60 Volts

    KIA N-CHANNEL MOSFET 50N06


    SEMICONDUCTORS

    8.Test circuits and waveforms

    4 of 9

    Free Datasheet http://www.datasheet4u.com/


    50 Amps, 60 Volts

    KIA N-CHANNEL MOSFET 50N06


    SEMICONDUCTORS

    5 of 9

    Free Datasheet http://www.datasheet4u.com/


    50 Amps, 60 Volts

    KIA N-CHANNEL MOSFET 50N06


    SEMICONDUCTORS

    6 of 9

    Free Datasheet http://www.datasheet4u.com/


    50 Amps, 60 Volts

    KIA N-CHANNEL MOSFET 50N06


    SEMICONDUCTORS

    9.Typical characteristics

    7 of 9

    Free Datasheet http://www.datasheet4u.com/


    50 Amps, 60 Volts

    KIA N-CHANNEL MOSFET 50N06


    SEMICONDUCTORS

    8 of 9

    Free Datasheet http://www.datasheet4u.com/


    50 Amps, 60 Volts

    KIA N-CHANNEL MOSFET 50N06


    SEMICONDUCTORS

    9 of 9

    Free Datasheet http://www.datasheet4u.com/

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