R1112N Series: Low Noise 150ma Ldo Regulator

R1112N SERIES
LOW NOISE 150mA LDO REGULATOR

NO.EA-059-100113
OUTLINE
The R1112N Series are CMOS-based voltage regulator ICs with high output voltage accuracy, extremely low supply current, low ON-resistance, and high Ripple Rejection. Each of these voltage regulator ICs consists of a voltage reference unit, an error amplifier, resistors, a current limit circuit, and a chip enable circuit. These ICs perform with low dropout voltage and a chip enable function. The line transient response and load transient response of the R1112N Series are excellent, thus these ICs are very suitable for the power supply for hand-held communication equipment. The output voltage of these ICs is fixed with high accuracy. Since the package for these ICs is SOT-23-5 (Mini-mold) package , high density mounting of the ICs on boards is possible.
FEATURES
Ultra-Low Supply Current................................................ Typ. 100A Standby Mode Current .................................................. Typ. 0.1A Low Dropout Voltage....................................................... Typ. 0.19V (IOUT=100mA 3.0V Output type) High Ripple Rejection ..................................................... Typ. 80dB(f=1kHz) Low Temperature-Drift Coefficient of Output Voltage...... Typ. 100ppm/C Excellent Line Regulation ............................................... Typ. 0.05%/V High Output Voltage Accuracy ........................................ 2.0% Excellent Dynamic Response Small Package .............................................................. SOT-23-5(Mini-mold) Output Voltage ................................................................ 1.5V to 5.0V (0.1V steps) (For other voltages, please refer to MARK INFORMATIONS.) Built-in chip enable circuit ( 2 types; A: active Low, B: active High) Pin-out............................................................................. Similar to the LP2980/LP2985 Built-in fold-back protection circuit .................................. Typ.30mA (Current at short mode) Ceramic capacitors recommended to be used with this IC
APPLICATIONS
Power source for cellular phones such as GSM, CDMA and various kinds of PCSs. Power source for electrical appliances such as cameras, VCRs and camcorders. Power source for battery-powered equipment.
R1112N
BLOCK DIAGRAM
R1112Nxx1A
1 VDD 5 VOUT 1 VDD
R1112Nxx1B
5 VOUT
Vref CE 3 Current Limit GND 2 CE 3
Vref Current Limit GND 2
SELECTION GUIDE
The output voltage, the active type for the ICs can be selected at the user's request. Product Name R1112Nxx1-TR-FE Package SOT-23-5 Quantity per Reel 3,000 pcs Pb Free Yes Halogen Free Yes
xx : The output voltage can be designated in the range from 1.5V(15) to 5.0V(50) in 0.1V steps. (For other voltages, please refer to MARK INFORMATIONS.) : Designation of Active Type. (A) "L" active type (B) "H" active type
R1112N
PIN CONFIGURATION
SOT-23-5
5 4
VOUT (mark side) VDD GND
NC
CE
PIN DESCRIPTION
Pin No 1 2 3 4 5 Symbol VDD GND
CE or CE
Pin Description Input Pin Ground Pin Chip Enable Pin No Connection Output pin
NC VOUT
ABSOLUTE MAXIMUM RATINGS

Symbol VIN VCE VOUT IOUT PD Topt Tstg Input Voltage Input Voltage( CE or CE Pin) Output Voltage Output Current Power Dissipation Operating Temperature Range Storage Temperature Range Item Rating 7.0 -0.3 ~ VIN+0.3 -0.3 ~ VIN+0.3 200 250 -40 ~ 85 -55 ~ 125 Unit V V V mA mW C C
) For Power Dissipation, please refer to PACKAGE INFORMATION. ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured.
R1112N
ELECTRICAL CHARACTERISTICS
R1112Nxx1A
Symbol
VOUT IOUT VOUT/IOUT VDIF ISS Istandby VOUT/VIN RR VIN VOUT/ Topt ISC RPU VCEH
Topt=25C
Item
Output Voltage Output Current Load Regulation Dropout Voltage Supply Current Supply Current (Standby) Line Regulation Ripple Rejection Input Voltage Output Voltage Temperature Coefficient Short Current Limit
CE Pull-up Resistance
Conditions
VIN = Set VOUT + 1V 1mA < IOUT < 30mA = = VIN VOUT = 1.0V VIN = Set VOUT + 1V 1mA < IOUT < 80mA = =
Min.
VOUT 0.98 150
Typ.
Max.
VOUT 1.02
Unit
V mA
12
40
mV
Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE VIN = Set VOUT + 1V VIN = VCE = Set VOUT + 1V Set VOUT+0.5V < VIN < 6.0V = = IOUT = 30mA f = 1kHz, Ripple 0.5Vp-p VIN = Set VOUT + 1V 2.0 IOUT = 30mA 40C < Topt < 85C = = VOUT = 0V 2.5 1.5 100 30 5.0 10.0 VIN 100 0.1 0.05 80 6.0 170 1.0 0.20 A A %/V dB V ppm/C mA M
CE Input Voltage H
CE Input Voltage L
V V
Vrms
VCEL en
0.00 BW=10Hz to 100kHz 30
0.25
Output Noise
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions.
R1112N
R1112Nxx1B
Symbol
VOUT IOUT
VOUT/IOUT
Topt=25C
Item
Output Voltage Output Current Load Regulation Dropout Voltage Supply Current Supply Current (Standby) Line Regulation Ripple Rejection Input Voltage Output Voltage Temperature Coefficient Short Current Limit CE Pull-down Resistance CE Input Voltage H CE Input Voltage L Output Noise
Conditions
VIN = Set VOUT + 1V 1mA < IOUT < 30mA = = VIN VOUT = 1.0V VIN = Set VOUT + 1V 1mA < IOUT < 80mA = =
Min.
VOUT 0.98 150
Typ.
Max.
VOUT 1.02
Unit
V mA
12
40
mV
VDIF ISS Istandby

VOUT/VIN
Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE VIN = Set VOUT + 1V VIN = Set VOUT + 1V VCE =GND Set VOUT + 0.5V < VIN < 6.0V = = IOUT = 30mA f = 1kHz, Ripple 0.5Vp-p VIN = Set VOUT + 1V 2.0 IOUT = 30mA 40C < Topt < 85C = = VOUT = 0V 2.5 1.5 0.00 BW=10Hz to 100kHz 30
100
100 0.1 0.05 80
170 1.0 0.20
A A
%/V dB
RR VIN
VOUT/T
6.0
V ppm/C mA
ISC RPD VCEH VCEL en
30 5.0 10.0 VIN 0.25
M V V
Vrms
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions.
ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE

Topt = 25C
Output Voltage VOUT (V) 1.5 1.7 1.9 2.4 2.8

< = < = < = < = < =
VOUT VOUT VOUT VOUT VOUT
< = < = < = < = < =
1.6 1.8 2.3 2.7 5.0
Dropout Voltage VDIF (V) Condition Typ. 0.32 0.28 IOUT = 100mA 0.25 0.20 0.19
Max. 0.55 0.47 0.35 0.29 0.26
R1112N
OPERATION
R1112Nxx1A
1 VDD 5 VOUT 1 VDD
R1112Nxx1B
5 VOUT
R1 Vref CE 3 Current Limit R2 GND CE 3 Vref Current Limit
R1
R2
GND
In these ICs, fluctuation of the output voltage, VOUT is detected by feed-back registers R1, R2, and the result is compared with a reference voltage by the error amplifier, so that a constant voltage is output. A current limit circuit for protection in short mode and a chip enable circuit, are included.
TECHNICAL NOTES
When using these ICs, consider the following points: Phase Compensation In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, be sure to use a capacitor COUT with good frequency characteristics and ESR (Equivalent Series Resistance). We use Ceramic Capacitors for evaluation of these ICs. Recommended Capacitors; GRM40X5R225K6.3 (Murata) GRM40-034X5R335K6.3 (Murata) GRM40-034X5R475K6.3 (Murata) (Note: When the additional ceramic capacitors are connected to the Output Pin with Output capacitor for phase compensation, the operation might be unstable. Because of this, test these ICs with as same external components as ones to be used on the PCB.) PCB Layout Make VDD and GND lines sufficient. If their impedance is high, picking up the noise or unstable operation may result. Connect a capacitor with a capacitance value of 2.2F or more between VDD and GND pin as close as possible. Set external components, especially output capacitor as close as possible to the ICs and make wiring as short as possible.
R1112N
TEST CIRCUITS
CE 3 3 CE
IN
VDD 1
VOUT R1112Nxx1B Series 5
OUT IOUT
IN ISS
VDD 1
OUT
2 2.2F GND 2.2F
2 GND
Fig.1 Standard test Circuit
Fig.2 Supply Current Test Circuit
CE 3 3
CE
IN
VDD 1
OUT IOUT
IN
VDD 1
OUT
P.G
2 GND 2.2F
2 GND I1 I2
Fig.3 Ripple Rejection, Line Transient Response Test Circuit
Fig.4 Load Transient Response Test Circuit
R1112N
TYPICAL CHARACTERISTICS
1) Output Voltage vs. Output Current
R11x2N151B
1.8 1.6
Output Voltage VOUT(V)
R11x2N201B
2.5 2
VIN=2.3V
1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 100 200 300 400 500 Output Current IOUT(mA)
VIN=2.0V VIN=2.5V VIN=3.5V
1.5 1 0.5 0 0
100
200
300
400
500
Output Current IOUT(mA)
R11x2N301B
3.5
R11x2N401B
5
4
VIN=4.3V
2.5
VIN=3.3V
2 1.5 1 0.5 0 0
3 2 1 0
100
200
300
400
500
100
200
300
400
500
R11x2N501B
6
5 4 3 2 1 0 0 100 200 300 400 500 Output Current IOUT(mA)

VIN=5.3V VIN=5.5V VIN=6.0V VIN=7.0V
R1112N
2) Output Voltage vs. Input Voltage
R11x2N151B
1.600
R11x2N201B
2.100
1.500 1.400 1.300 1.200 1.100 1.000 1 2 3 4 5 6 7 Input Voltage VIN(V)

IOUT=1mA IOUT=30mA IOUT=50mA
2.000 1.900 1.800 1.700 1.600 1.500 1 2 3 4 5 6 7 Input Voltage VIN(V)

R11x2N301B
3.100 4.500 3.000 2.900 2.800 2.700 2.600 2.500 2 3 4 5 6 7 Input Voltage VIN(V)
R11x2N401B
4.000
3.500
3.000
2.500 2 3 4 5 6 7 Input Voltage VIN(V)
R11x2N501B
5.500 5.000 4.500 4.000 3.500 3.000 2.500 2 3 4 5 6 7 Input Voltage VIN(V)
R1112N
3) Dropout Voltage vs. Output Current
R11x2N151B
0.600
Dropout Voltage VDIF(V)
R11x2N201B
0.600 0.500 0.400 0.300 0.200 0.100 0.000
Topt=-40C Topt=25C Topt=85C
0.400 0.300 0.200 0.100 0.000 0
50
100
150
0.500
50
100
150
R11x2N301B
0.600
R11x2N401B
0.600 0.500 0.400 0.300 0.200 0.100 0.000
0.400 0.300 0.200 0.100 0.000 0
50
100
150
0.500
50
100
150
R11x2N501B
0.600 0.500 0.400 0.300 0.200 0.100 0.000 0 50 100 150 Output Current IOUT(mA)
10
R1112N
4) Output Voltage vs. Temperature
R11x2N151A/B
VIN=2.5V CIN=1F COUT=2.2F IOUT=30mA 1.53 1.52
Output VoltageVOUT(V)
R11x2N201A/B
VIN=3.0V CIN=1F COUT=2.2F IOUT=30mA 2.10 2.08 2.06 2.04 2.02 2.00 1.98 1.96 1.94 1.92 1.90
1.51 1.50 1.49 1.48 1.47 -50 -25 50 Temperature Topt (C) 0 25 75 100
-50
-25
0 25 50 Temperature Topt (C)
75
100
R11x2N301A/B
VIN=4.0V CIN=1F COUT=2.2F IOUT=30mA 3.06 3.04 3.02 3.00 2.98 2.96 2.94 -50 -25 50 Temperature Topt (C) 0 25 75 100 4.08 4.06
R11x2N401A/B
VIN=5.0V CIN=1F COUT=2.2F IOUT=30mA
4.04 4.02 4.00 3.98 3.96 3.94 3.92 -50 -25 0 25 50 Temperature Topt (C) 75 100
R11x2N501A/B
VIN=6.0V CIN=1F COUT=2.2F IOUT=30mA 5.10 5.08 5.06 5.04 5.02 5.00 4.98 4.96 4.94 4.92 4.90 -50 -25 0 25 50 Temperature Topt (C) 75 100
11
R1112N
5) Supply Current vs. Input Voltage
R11x2N151B
120 120
R11x2N201B
Supply Current ISS (A)
100 80 60 40 20 0
100 80 60 40 20 0 1 2 3 4 5 Input Voltage VIN (V) 6 7
3 4 5 Input Voltage VIN (V)
R11x2N301B
120 120
R11x2N401B
100 80 60 40 20 0
3 4 5 Input Voltage VIN (V)
R11x2N501B
120
12
R1112N
6) Supply Current vs. Temperature
R11x2N151A/B
200 VIN=2.5V CIN=1F COUT=2.2F 200
R11x2N201A/B
VIN=3.0V CIN=1F COUT=2.2F
150

50 75 0 25 Temperature Topt (C) 100
150
100
100
50
50
0 -50
-25
0 -50
-25
50 75 0 25 Temperature Topt (C)
100
R11x2N301A/B
200 VIN=4.0V CIN=1F COUT=2.2F 200
R11x2N401A/B
VIN=5.0V CIN=1F COUT=2.2F
150

50 75 0 25 Temperature Topt (C) 100
150
100
100
50
50
0 -50
-25
0 -50
-25
100
R11x2N501A/B
200 VIN=6.0V CIN=1F COUT=2.2F
150
100
50
0 -50
-25
100
13
R1112N
7) Ripple Rejection vs. Frequency
R11x2N151A/B
90.00
Ripple Rejection RR (dB)
R11x2N201A/B
90.00
VIN=2.5V+0.5Vp-p COUT=2.2F IOUT=30mA
80.00 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 0.1 10 1 Frequency Freq (kHz) 100
R11x2N301A/B
90.00
R11x2N401A/B
90.00
R11x2N501A/B
90.00
14
R1112N
8) Ripple Rejection vs. Input Voltage (DC bias)
R11x2N301B
90.00 COUT=Ceramic 2.2F IOUT=1mA 90.00
R11x2N301B
COUT=Ceramic 2.2F IOUT=10mA
80.00 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 3.10
f=400Hz f=1kHz f=10kHz
80.00 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 3.10
3.20 3.30 3.40 Input Voltage VIN (V)
3.50
3.50
R11x2N301B
90.00 COUT=Ceramic 2.2F IOUT=50mA
80.00 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 3.10
3.50
9) Input Transient Response

R11x2N501B
Tek Run : 2.50MS/s Average
Topt=25C
VIN
VOUT
VIN=2.5V3.5V IOUT=30mA CIN=none COUT=2.2F tr/tf=5s

Ch2 20.0mV M20.0s
Ch1 Ch1
1.00V
15
R1112N
R11x2N201B
Topt=25C
VIN
VOUT

Ch2 20.0mV M20.0s
Ch1
1.00V
R11x2N301B
Topt=25C
VIN
VOUT

Ch2 20.0mV M20.0s
Ch1
1.00V
R11x2N401B
Topt=25C
VIN
VOUT

Ch2 20.0mV M20.0s
Ch1
1.00V
16
R1112N
R11x2N501B
Topt=25C
VIN
VOUT

Ch2 20.0mV M20.0s
Ch1
1.00V
10) Load Transient Response

R11x2N151B
Topt=25C
IOUT
VOUT 2
IOUT=50mA100mA VIN=2.5V CIN=2.2F COUT=2.2F tr/tf=5s
Ch1 500mV
Ch2 50.0mV
M20.0s
R11x2N201B
Topt=25C
IOUT
VOUT 2

Ch2 50.0mV M20.0s
Ch1 500mV
17
R1112N
R11x2N301B
Topt=25C
IOUT
VOUT 2

Ch2 50.0mV M20.0s
Ch1 500mV
R11x2N401B
Topt=25C
IOUT
VOUT 2

Ch2 50.0mV M20.0s
Ch1 500mV
R11x2N501B
Topt=25C
IOUT
VOUT 2
Ch1 500mV
Ch2 50.0mV
M20.0s
18
R1112N
TECHNICAL NOTES
When using these ICs, consider the following points: In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, be sure to use a capacitor COUT with good frequency characteristics and ESR (Equivalent Series Resistance) of which is in the range described as follows:
3 CE VOUT1 5
Ceramic Cap.
R1112Nxx1B 1 VIN 2 GND
ESR IOUT
S.A
Spectrum Analyzer
VIN
Ceramic Cap.
Measuring Circuit for white noise; R1112N301B The relationship between IOUT (the output current) and ESR of the output capacitor is shown in the graphs below. The conditions when the white noise level is under 40V (Avg.) are indicated by the hatched area in the graph. (Note: When additional ceramic capacitors are connected to the output pin with the output capacitor for phase compensation, operation might be unstable. Because of this, test these ICs with the same external components as the ones to be used on the PCB.) <Measuring Conditions> (1)VIN=VOUT+1V (2)Frequency band: 10Hz to 1MHz (3)Temperature: 25C R11x2N151B
COUT=2.2F,CIN=2.2F 100 100
R11x2N151B
COUT=4.7F,CIN=2.2F
10
ESR ()
10
ESR ()
0.1
0.1
0.01 0 30 90 60 IOUT (mA) 120 150
0.01 0 30 90 60 IOUT (mA) 120 150
19
R1112N
R11x2N301B
COUT=2.2F,CIN=2.2F 100 100
R11x2N301B
COUT=4.7F,CIN=2.2F
10
ESR ()
ESR ()
10
0.1
0.1
0.01 0 30 90 60 IOUT (mA) 120 150
0.01 0 30 90 60 IOUT (mA) 120 150
TYPICAL APPLICATION
CE CE
IN
VDD R1112Nxx1A Series GND
VOUT
OUT
IN
VDD
R1112Nxx1B VOUT Series GND Cap.
OUT
Cap.
Cap.
Cap.
(External Components) Output Capacitor; Ceramic 2.2F (Set Output Voltage in the range from 2.5 to 5.0V) Ceramic 4.7F (Set Output Voltage in the range from 1.5 to 2.5V) Input Capacitor; Ceramic 2.2F
20
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R1112N Series: Low Noise 150ma Ldo Regulator

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R1112N Series: Low Noise 150ma Ldo Regulator

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R1112N SERIES

LOW NOISE 150mA LDO REGULATOR

Vref CE 3 Current Limit GND 2 CE 3

Vref Current Limit GND 2

VOUT (mark side) VDD GND

ABSOLUTE MAXIMUM RATINGS

0.00 BW=10Hz to 100kHz 30

VDIF ISS Istandby

100 0.1 0.05 80

170 1.0 0.20

ISC RPD VCEH VCEL en

30 5.0 10.0 VIN 0.25

ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE

Output Voltage VOUT (V) 1.5 1.7 1.9 2.4 2.8

VOUT VOUT VOUT VOUT VOUT

< = < = < = < = < =

1.6 1.8 2.3 2.7 5.0

Max. 0.55 0.47 0.35 0.29 0.26

R1 Vref CE 3 Current Limit R2 GND CE 3 Vref Current Limit

VOUT R1112Nxx1B Series 5

VOUT R1112Nxx1B Series 5

2 2.2F GND 2.2F

Fig.1 Standard test Circuit

Fig.2 Supply Current Test Circuit

VOUT R1112Nxx1B Series 5

VOUT R1112Nxx1B Series 5

Fig.3 Ripple Rejection, Line Transient Response Test Circuit

Fig.4 Load Transient Response Test Circuit

Output Voltage VOUT(V)

VIN=2.5V VIN=3.0V VIN=4.0V

Output Current IOUT(mA)

Output Voltage VOUT(V)

VIN=3.5V VIN=4.0V VIN=5.0V

VIN=4.5V VIN=5.0V VIN=6.0V

Output Current IOUT(mA)

Output Current IOUT(mA)

5 4 3 2 1 0 0 100 200 300 400 500 Output Current IOUT(mA)

1.500 1.400 1.300 1.200 1.100 1.000 1 2 3 4 5 6 7 Input Voltage VIN(V)

2.000 1.900 1.800 1.700 1.600 1.500 1 2 3 4 5 6 7 Input Voltage VIN(V)

Output Voltage VOUT(V)

Output Voltage VOUT(V)

IOUT=1mA IOUT=30mA IOUT=50mA

2.500 2 3 4 5 6 7 Input Voltage VIN(V)

Output Voltage VOUT(V)

0.400 0.300 0.200 0.100 0.000 0

Dropout Voltage VDIF(V)

Topt=-40C Topt=25C Topt=85C

Output Current IOUT(mA)

Output Current IOUT(mA)

0.400 0.300 0.200 0.100 0.000 0

Dropout Voltage VDIF(V)

Topt=-40C Topt=25C Topt=85C

Output Current IOUT(mA)

Output Current IOUT(mA)

Dropout Voltage VDIF(V)

0 25 50 Temperature Topt (C)

Supply Current ISS (A)

100 80 60 40 20 0 1 2 3 4 5 Input Voltage VIN (V) 6 7

3 4 5 Input Voltage VIN (V)

Supply Current ISS (A)

100 80 60 40 20 0 1 2 3 4 5 Input Voltage VIN (V) 6 7

3 4 5 Input Voltage VIN (V)