EDC Lab No.8 (BJT Common Emitter I-V Characteristics)

THE UNIVERSITY OF LAHORE,ISLAMABAD CAMPUS
Department of Electrical Engineering
Semester:_____________ Dated: ________________
Section: ________________
EE04204: ELECTRONIC DEVICES AND CIRCUITS
Lab 8: BJT Common Emitter I-V characteristics
Name Reg. no. LAB Work/15 Report Viva Marks / Total/25

Marks / 5 5
EE04204: Electronic Devices and Circuits Page 1

LABORATORY EXERCISE-8
BJT I-V Characteristics (Common Emitter)

Objective: To study current-voltage characteristics of BJTs
 The primary purpose of this lab is to develop a working knowledge of Bipolar Junction Transistor (BJT).
Transistors are current controlled devices which find applications in a vast array of circuits including but
not limited to amplifiers, electronic switches, multipliers etc.
 First, the students will learn the method that is used to determine the type of the transistor and find out
and label various terminals of the BJT.
 Other parts deal with the study the I-V characteristics of the BJT, and see how varying the parameters
of the BJT affect them. For our implementation and simulation phase the 2N2222 transistor will be used
which is one of the popular type of BJT around.
Required Resources
The following components, test equipment and software would be required.

 2N2222 Transistor
 DMM
 Oscilloscope
 Resistors
 Capacitors
 Power Supply
 Proteus Simulation Software.
The Experiment
The experiment is broken down in two exercises; Exercise 2 is divided into two parts namely: simulation and
implementation. You are required to observe and record the simulation/implementation results and answer the
given questions. Include your answers in your lab reports.
Exercise 1: BJT Type Identification (Implementation-I)
In this part of the experiment you will be given a sample transistor and using the procedure below you are
required to determine whether the transistor is an NPN or PNP transistor. You are also required to identify the
terminals of the transistor.
Procedure
 Set your digital multi-meter to diode check mode.

 The physical packing and shape of 2N2222 transistor is shown in figure-1. Mark your
terminals as 1, 2 and 3.
 Now, connect the probes of the multi-meter to any two terminals of the transistor and
observe the readings. Interchange the positive and negative leads of the DMM and observe
the new reading.
 Record your observations in the form of a table.
 The two terminals for which your DMM shows a high or out of range reading even after
reversing the order of the probes are the collector and the emitter. The third terminal is
obviously the base.
 The lower of the two “finite” readings that are measured correspond to the base-collector
junction.

 To determine the type of transistor, you are required to use your previous knowledge of
diodes and their biasing modes to determine whether the transistor is of NPN or PNP type.
2N2222 Packaging
Figure 1 Physical packing of 2N2222
Observations/Measurements and Explanation:
Accomplish the following and explain your results:

 Tabulate your observations in the form of a table clearly showing the order of the connection of
the probes to the terminals and the corresponding reading on the DMM.
 Identify each of the terminals.
 Explain why the diode check reading for the collector base junction is lower than the emitter
base junction?
 How will you determine whether the transistor is NPN or PNP type?
Exercise 2 Part A:
Common Emitter I-V Characteristics of the BJT (Simulation-I)
In this part the students will study the common emitter I-V characteristics of a BJT. In particular relationship
between the collector current and the voltage that appears across the collector-emitter junction of the transistor
will be observed. Further, the effect of various parameters like, saturation current, early voltage etc. on the
transistor I-V characteristics will be studied.
Procedure:
1. Using Proteus software, draw the circuit as shown in figure 2A.

2. The test circuit in figure 2A is used to determine the dependence of the collector current on the
base-emitter voltage as well as the voltage applied at the collector. The source VBB in figure 2A
controls the amount of base-emitter voltage and the current that enters the base terminal and
the source VCC controls the voltage that appears at the collector terminal.
3. In the first simulation run, set the value of R1 = 1Ω.
4. Create an appropriate simulation profile to perform DC Sweep Analysis.
5. Sweep the collector voltage from 0 to 30 V.
6. Set the base voltage at values between 0.5V and 0.8V in steps of 0.1 V and obtain a i C vs vCE
graph using dc sweep analysis..
7. Now do a second simulation run using R1 = 220Ω. Repeat steps (4) to (8)
8. Kindly make sure that your graph is neat, clear and labeled correctly.

B2
I2(1)
R2
1
R1 Q1
2N2222
2.2
B1
0.4V
Figure 2A Test Circuit for Common Emitter Characteristics of BJT
Observations/Measurements
Answer the following questions and include them in your report. Support your answers by mathematical
equations where necessary.
o For each value of Base voltage VBB,, selected above,, (in steps of 0.1V) calculate the
value of the base current IB.
o Calculate the average value of β for each value of base current. Comment on and
explain the trend that you observe.
o On the IC versus VCE plot, identify each region of operation of the transistor.
o Why does the graph of the collector current have a considerable slope in the active
region of the transistor? Explain.
o Calculate the Early voltage of the transistor using the gradient of the plot that you have
obtained.
Exercise 2 Part B:
Common Emitter I-V Characteristics of the BJT (Implementation-II)
This exercise involves the implementation of a circuit to test the I-V characteristic of a BJT which you have
extensively studied through the simulation phase of the experiment.
 Patch the circuit as shown in figure 2B.
 For a fixed value of VBB, vary VCC in steps of 1V from 0 to 9 volts and record the values of IB, IC
and VCE. Take sufficient readings.
 Change the value of VBB in steps of 0.1V and for each valve of VBB ,calculate and tabulate the
values of β.

 Plot the collector current versus collector emitter voltage using your data points in MS Excel and
include it in your report
B2
0V-9V
R2
220
R1 Q1
2N2222
2.2
B1
0.6V-0.9V
Figure 2B – Circuit Diagram for Implementation-II
Observations/Measurements and Explanations
Answer the following questions:

 Compare the graphs that you have obtained from Simulation-I and Implementation-II. Are they similar?
If not, explain the differences.
 Calculate the early voltage based on the IC-VCE graphs that you have obtained. Compare with the value
that you have obtained from Simulation-I.
 Try and change the values of the resistances and observe its effect on the IC-VCE curve. What changes
do you observe? Is there any change in the slope of the graph in the active region? Comment in each
case.
Lab Report:
Each student group has to submit detailed lab report with proper outputs and results obtained
by performing experiment. The format of the report should be as explained by the course
instructor. Your lab report is due before the next lab.

EDC Lab No.8 (BJT Common Emitter I-V Characteristics)

Uploaded by

Copyright:

Available Formats

EDC Lab No.8 (BJT Common Emitter I-V Characteristics)

Uploaded by

Document Information

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

EDC Lab No.8 (BJT Common Emitter I-V Characteristics)

Uploaded by

Copyright:

Available Formats

THE UNIVERSITY OF LAHORE,ISLAMABAD CAMPUS

Department of Electrical Engineering

Semester:_____________ Dated: ________________

EE04204: ELECTRONIC DEVICES AND CIRCUITS

Lab 8: BJT Common Emitter I-V characteristics

Name Reg. no. LAB Work/15 Report Viva Marks / Total/25

EE04204: Electronic Devices and Circuits Page 1

BJT I-V Characteristics (Common Emitter)

The following components, test equipment and software would be required.

 Set your digital multi-meter to diode check mode.

EE04204: Electronic Devices and Circuits Page 2

Figure 1 Physical packing of 2N2222

Observations/Measurements and Explanation:

Accomplish the following and explain your results:

Common Emitter I-V Characteristics of the BJT (Simulation-I)

1. Using Proteus software, draw the circuit as shown in figure 2A.

EE04204: Electronic Devices and Circuits Page 3

Figure 2A Test Circuit for Common Emitter Characteristics of BJT

Common Emitter I-V Characteristics of the BJT (Implementation-II)

EE04204: Electronic Devices and Circuits Page 4

Figure 2B – Circuit Diagram for Implementation-II

Observations/Measurements and Explanations

Answer the following questions:

EE04204: Electronic Devices and Circuits Page 5

You might also like

Semester:_ Dated: ____