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Group A

Sr.No. Questions Marks


1. What is MOSFET? 2
2. Explain how MOSFET functions? 2
3. Explain constructional features of a MOSFET. 2

4. Explain the three regions of operation of a MOSFET. 2

5. What are the main constructional differences between a 2


MOSFET and a BJT?
6. What effect do they have on the current conduction 2
mechanism of a MOSFET?
7. Write down advantages of MOSFET. 2
8. What is MOSFET give it different mode of operation 2
9. What is Forward Transconductance? 2
10. What is body bias? 2
Group B
Sr. No. Questions Marks
1. What is body effect? 5

2. What does it mean “the channel is pinched off”? 5

3. V-I characteristic of MOSFET. 5


4. Can you explain the basic operation of an insulated 5
gate field effect transistor?

5. What are the various parameters used to describe a 5


MOSFET?

6. What causes leakage current in MOSFETs? 5

7. What are the main differences between JFETS and 5


MOSFETs?
8. Is it possible to use two MOSFETs as input logic to 5
one another? If yes, then how?

9. What is the main advantage of using MOSFETs 5


compared to other transistors like BJT?

10. What should we keep in mind while designing a 5


circuit that uses MOSFETs?

Group c
Sr. Question Mark
No s
.
1. What do you think is better, CMOS or NMOS? Why? 8+7
And What conditions need to be met for a transistor to
operate in saturation mode?
2. i) What’s the difference between short channel effects and 7+8
long-channel effects in MOSFETs?
ii) What are the advantages and disadvantages of using
MOSFETs over other transistors?

3. i). What is nMOS and pMOS?


ii)explain what a depletion-type MOSFET is? 5+5+
iii) What do you understand about enhancement-mode 5
devices?
4. 1. Can you explain the basic operation of an insulated gate field
effect transistor? 6+6+
2. How does a metal oxide semiconductor work? 3
3. What are the different types of MOSFETs?
5. A D-MOSFET has parameters of VGS (off) = – 6V and IDSS 15
= 1 mA. How will you plot the transconductance curve for the
device?
6. Determine the values of ID and VDS for the circuit shown in Fig. 15
20. The data sheet for this particular MOSFET gives ID (on) = 10
mA when VGS = VDS.
7. The D-MOSFET used in the amplifier of Fig. 18 has an IDSS = 12 8+7
mA and gm = 3.2 mS. Determine
(i) d.c. drain-to-source voltage VDS and
(ii) (ii) a.c. output voltage. Given vin = 500 mV.

8. Determine VGS and VDS for the EMOSFET circuit in Fig. 19. The 15
data sheet for this particular MOSFET gives ID (on) = 500 mA at
VGS = 10V and VGS (th) = 1V.
9. For a certain D-MOSFET, IDSS = 10 mA and VGS (off) = – 8V. 15
(i) Is this an n-channel or a p-channel ?
(ii) Calculate ID at VGS = – 3V.
(iii) Calculate ID at VGS = + 3V.
10. The MOSFET circuit shown below uses a MOSFET with the 15
indicated characteristics. For each of the cases listed, solve
MOSFET’s device current and drain voltage, and indicate
whether the device is operating in saturation or triode

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