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    Microelectronic Circuits, 8e Sedra, Smith, Carusone, Gaudet

    Uploaded by

    Bob

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    of 2

    EE 315 Homework 6

    Due Thursday, March 24, 2022


    Submit your solutions as a pdf file in Canvas.
    2
    1. A particular MOSFET for which Vtn = 0.4 V and kn0 (W/L) = 2 mA/V is to be operated in the
    saturation region. If iD is to be 50 µA, find the required vGS and the minimum required vDS . Repeat
    for iD = 200 µA.
    2. A particular n-channel MOSFET is measured to have a drain current of 360 µA at vGS = vDS = 1 V
    and of 160 µA at vGS = vDS = 0.8 V. What are the values of kn and Vt for this device?

    3. Design the circuit below to establish a drain current of 0.1 mA and a drain voltage of +0.2 V. The
    MOSFET has:
    • Vt = 0.2 V
    2
    • µn Cox = 400 µA/V
    • L = 0.5 µm
    • W = 4 µm
    Specify the required values for RS and RD .

    4. It is required to operate the transistor in the circuit below at the edge of saturation with ID = 50 µA.
    If Vt = 0.4 V, find the required value of RD .

    Microelectronic Circuits, 8e Sedra, Smith, Carusone, Gaudet Copyright © 2020 Oxford University Pres

    1
    2
    5. The PMOS transistor in the circuit below has Vt = −0.5 V, µp Cox = 100 µA/V , and L = 0.18 µm.
    Find the values required for W and R in order to establish a drain current of 160 µA and a voltage
    VD = 0.8 V.

    2
    6. The NMOS transistors in the circuit below have Vt = 0.5 V, µn Cox = 200 µA/V , and L1 = L2 =
    L3 = 0.5 µm. Find the required gate width for each of Q1 , Q2 , and Q3 to obtain the voltage and
    current values indicated.

    Circuits, 8e Sedra, Smith, Carusone, Gaudet Copyright © 2020 Oxf

    oelectronic Circuits, 8e Sedra, Smith, Carusone, Gaudet Copyright © 2020 Oxford University

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