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Class 12 Physics First Term Paper 22-23 PDF

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SARASWATI MODERN PUBLIC SCHOOL BANSUR

SESSION : 2022-2023

Class: XII

SUBJECT: PHYSICS (041)

Maximum Marks: 70 Marks Time Allowed: 3 hours.

General Instructions:

(1) There are 35 questions in all. All questions are compulsory


(2) This question paper has five sections: Section A, Section B, Section C, Section D and Section E.
All the sections are compulsory.
(3) Section A contains eighteen MCQ of 1 mark each, Section B contains seven questions of two
marks each, Section C contains five questions of three marks each, section D contains three
long questions of five marks each and Section E contains two case study based questions of 4
marks each.
(4) There is no overall choice. However, an internal choice has been provided in section B, C, D and
E. You have to attempt only one of the choices in such questions.
(5) Use of calculators is not allowed.
SECTION A

1 Which one of the following is the unit of electric field?


(a) Coulomb
(b) Newton
(c) Volt
(d) N/C

2. 1 volt is equivalent to

3. In a region of constant potential


(a) the electric field is uniform.
(b) the electric field is zero.
(c) there can be no charge inside the region.
(d) both (b) and (c) are correct.
4.The resistivity of alloy manganin is
(a) Nearly independent of temperature
(b) Increases rapidly with increase in temperature
(c) Decreases with increase in temperature
(d) Increases rapidly with decrease in temperature

5. If n cells each of emf e and internal resistance r are connected in parallel, then the total emf
and internal resistance will be

6. Ampere’s circuital law is given by

7.The nature of parallel and anti-parallel currents are


(a) parallel currents repel and antiparallel cur¬rents attract.
(b) parallel currents attract and antiparallel cur-rents repel.
(c) both currents attract. ’
(d) both currents repel.

8.S.I. unit of flux is :


(a) Ohm
(b) Weber
(c) Tesla
(d) None

9.The dimensional representation of magnetic flux density is :


(a) [MLT-2]
(b) [MLT-2A-1]
(c) [MLT-2A-2]
(d) [MT-2A-1]

10.The magnetic flux (∅) linked with a coil is related to the number of turns (N) ofthe coil as:
(a) f ∝ N
(b) f ∝ N-1
(c) f ∝ N2
(d) f ∝ N-2

11.The magnetic flux linked with a coil is inversely proportional to the?


(a) magnetic field
(b) area of cross section
(c) number of turns
(d) none of these

12.Light year is the unit of:


(a) distance
(b) time
(c) intensity of light
(d) None of these

13.A convergent lens will become less convergent in :


(a) oil
(b) water
(c) both of (a) and (b)
(d) none of these

14.A semiconductor has generally ……………… valence electrons.


a. 2 b.3 c.6 d.4
15  By adding pentavalent impurity atoms to an intrinsic semiconductor material, the number of
________ increased

a. Free electrons

 b.Holes

c. Both a and b

d. None of the above


Two statements are given-one labelled Assertion (A) and the other labelled Reason (R). Select the
correct answer to these questions from the codes (a), (b), (c) and (d) as given below.
a) Both A and R are true and R is the correct explanation of A
b) Both A and R are true and R is NOT the correct explanation of A
c) A is true but R is false
d) A is false and R is also false
16.Assertion : Lenz's law violates the principle of conservation of energy
Reason : Induced emf always opposes the change in magnetic flux responsible for its production.
17.Assertion : In a semiconductor, the conduction electrons have a higher mobility than holes.
Reason: The electrons experience fewer collisions.
18.Assertion : Diamagnetic materials can exhibit magnetism.
Reason : Diamagnetic materials have permanent magnetic dipole moment.

SECTION B

19.Draw a pn junction with reverse bias? Which biasing will make the resistance of a p-n-junction high?

20.What are optical fibres? Give their one use?


21.State the law that gives the polarity of the induced emf.

OR

21.Current in e circuit fails steadily bum AU A to 0.0 A in 10 ms. ii an average emf of 200 V is induced,
then calculate the self-inductance of the Circuit.

22.Explain the following:a. Why do magnetic lines of force form continuous closed loops?

b. Why are the field lines repelled (expelled) when a diamagnetic material is placed in an external
uniform magnetic field?

23. A long solenoid of length L having N turns carries a current I.Deduce the expression for the magnetic
field in the interior of the solenoid

OR

23.State Ampere’s circuital law. Show through an example, how this law enables an easy evaluation of
the magnetic field when there is a symmetry in the system?

24.What are ohmic and non-ohmic resistors? Give one example of each?

25. Show mathematically that the potential at a point on the equatorial line of an electric dipole is Zero.

SECTION C

26.A point charge +10 is a distance 5 cm directly above the centre of a square of side 10 cm, as shown in
Fig. 1.34. What is the magnitude of the electric flux through the square? (Hint: Think of the square as
one face of a cube with edge 10 cm.)

27. (a) Can two equipotential surfaces intersect each other? Give reasons.

(b) Derive the expression for the capacitance of a parallel plate capacitor having plate area A and
plate separation d.

28. A particle of charge q and mass m is moving with velocity It is subjected to a uniform magnetic field
B directed perpendicular to its velocity. Show that it describes a circular path. Write the expression for
its radius.

OR

28.A circular coil of closely wound N turns and radius r carries a current 7. Write the expressions for the
following: (i)The magnetic field at its centre. (ii)The magnetic moment of this COil.

29.a.Show diagrammatrically the behaviour of magnetic field lines in the presence of paramagnetic and
diamagnetic substances. How does one explain this distinguishing feature?
b.Give two points to distinguish between a paramagnetic and diamagnetic substance.

OR

29.What are the behaviour of diamagnetic, paramagnetic and ferromagnetic substances in non-uniform magnetic

field?

30.Two cells of EMFs ε1 and ε2 and Internal resistances r1 and r2 respectively are connected in
parallel. Obtain expressions for the equivalent
(i) resistance and
(ii) emf of the combination 

SECTION D

31.State the working of AC generator with the help of a labelled diagram. The coil of an AC generator
having N turns, each of area A, is rotated with a constant angular velocity to. Deduce the expression for
the alternating emf generated in the coil.What is the source of energy generation in this device?

OR

31.The current flowing in the two coils of self-inductance =16 mH and L2 = 12 mH are increasing at the
same rate. If the power supplied to the two coils are equal, find the ratio of (i)induced voltages (ii)the
currents and (iii)the energies stored in the coil at a given instant.

32.(i) Derive the expression for the electric potential due to an electric dipole at a point on its
axial line.
(ii) Depict the equipotential surfaces due to an electric dipole.

OR

32.A parallel plate capacitor is charged by a battery. After some time the battery is disconnected
and a dielectric slab of dielectric constant K is inserted between the plates. How would
(i) the capacitance,
(ii) the electric field between the plates and
(iii) the energy stored in the capacitor, be affected?

33 (i).State the two Kirchhoff's rules used in electric networks. How are there rules justified?
(ii). Derive the condition for balance of a Wheatstone's bridge using Kirchhoff's rules.

OR

33 (a) Six lead-acid type of secondary cells each of emf 2.0 V and internal resistance
0.015   are joined in series to provide a supply to a resistance of 8.5 . What are the
current drawn from the supply and its terminal voltage?
(b) A secondary cell after long use has an emf of 1.9 V and a large internal resistance of 380
Ω. What maximum current can be drawn from the cell? Could the cell drive the starting
motor of a car?
OR
33(a) At what angle should a ray of light be incident on the face of a prism of refracting
angle so that it just suffers total internal reflection at the other face? The refractive index of
the material of the prism is 1.524
(b) A virtual image, we always say, cannot be caught on a screen explain why.
SECTION E
CASE STUDY QUESTION
34.Materials are classified on the basis of their conductivity as metals,
semiconductors and insulators. Metals are having low resistivity and high
conductivity. While semiconductors are having resistivity and conductivity in
between metals and insulators. And finally insulators are those which are having
high resistivity or very low conductivity. Semiconductors may exist as elemental
semiconductors and also compound semiconductors. Si and Ge are elemental
semiconductor and CdS, GaAs, CdSe, anthracene, polypyrrole etc. are the compound
semiconductors. Each electron in an atom has different energy level and such
different energy levels continuing forms the band of energy called as energy bands.
Those energy band which has energy levels of Valence electrons is called as Valence
band. And the energy band which is present above the Valence band is called as
conduction band. On the basis of energy bands materials are also defined as metals,
semiconductors and insulators. In case of metals, conduction band and Valence
band overlaps with each other due to which electrons are easily available for
conduction. In case of insulators, there is some energy gap between conduction
band and Valence band due to which no free electrons are easily available for
conduction. And in semiconductors, there is a small energy gap between conduction
band and Valence band and if we give some external energy then electron from
Valence band goes to conduction band  due to which conduction will be possible.
These semiconductors are classified as intrinsic semiconductors and extrinsic
semiconductors also. Intrinsic semiconductors are those semiconductors which
exist in pure form. And intrinsic semiconductors has number of free electron is equal
to number of holes. The semiconductors doped with some impurity in order to
increase its conductivity are called as extrinsic semiconductors. Two types of
dopants are used they are trivalent impurity and pentavalent impurity also. The
extrinsic semiconductors doped with pentavalent impurity like Arsenic, Antimony,
Phosphorus etc are called as n – type semiconductors. In n type semiconductors
electrons are the majority charge carriers and holes are the minority charge carriers.
When trivalent impurity is like Indium, Boron, Aluminium etc are added to extrinsic
semiconductors then p type semiconductors will be formed. In p type
semiconductors holes are majority charge carriers and electrons are the minority
charge carriers.
Q 1.) In case of p-type semiconductors___
a) nh<< ne
b) nh = ne
c) nh>> ne
d) nh= ne = 0

Q 2.) An intrinsic semiconductor behaves like _____ at T = 0K.


a) conductor
b) metal
c) non metal
d) insulator

Q 3.) If the energy band gap Eg> 3 eV then such materials are called as
a) conductors
b) semiconductors
c) insulators
d) superconductors
Q 5.) How p-type and n-type semiconductors are formed?
35. An optical fibre is a thin tube of transparent material that allows light to pass through, without being
refracted into the air or another external medium. It make use of total internal reflection. These fibres are
fabricated in such a way that light reflected at one side of the inner surface strikes the other at an angle
larger than critical angle. Even, if fibre is bent, light can easily travel along the length.

(i) Which of the following is based on the phenomenon of total internal reflection of light?
(a) Sparkling of diamond (c) Instrument used by doctors for endoscopy
(b) Optical fibre communication (d) All of these
(ii) A ray of light will undergo rotal internal reflection inside the optical fibre, if it

(a) goes from rarer medium to denser medium


(b) is incident at an angle less than the critical angle
(c) strikes the interface normally
(d) is incident at an angle greater than the critical angle
(iii) If in core, angle of incidence is equal to critical angle, then angle of refraction will be

(a) 0° (b) 45° (c) 90 (d) 180°


(iv) In an optical fibre (shown), correct relation for refractive indices of core and cladding is

(a) n1 = n2 (b) n1 > n2 (c) n1 < n2 (d) n1 + n2 = 2

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