APT10045JLL

1000V 21A 0.450Ω

R
POWER MOS 7 MOSFET S S
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel 227
enhancement mode power MOSFETS. Both conduction and switching
G D
T-
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON) SO
®
and Qg. Power MOS 7 combines lower conduction and switching losses
"UL Recognized"
along with exceptionally fast switching speeds inherent with APT's ISOTOP ®
patented metal gate structure.
D
• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive G
• Lower Gate Charge, Qg • Popular SOT-227 Package
S

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol Parameter APT0045JLL UNIT

VDSS Drain-Source Voltage 1000 Volts
ID Continuous Drain Current @ TC = 25°C 21
Amps
IDM 1
Pulsed Drain Current 84
VGS Gate-Source Voltage Continuous ±30
Volts
VGSM Gate-Source Voltage Transient ±40
Total Power Dissipation @ TC = 25°C 460 Watts
PD
Linear Derating Factor 3.68 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
IAR 1
Avalanche Current (Repetitive and Non-Repetitive) 21 Amps
EAR 1 50
Repetitive Avalanche Energy
mJ
EAS Single Pulse Avalanche Energy 4
2500

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 1000 Volts
ID(on) On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Amps
21
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 11.5A) 0.450 Ohms
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) 100
IDSS µA
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) 500
3-2003

IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA

050-7015 Rev D

VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 5 Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

 DYNAMIC CHARACTERISTICS APT10045JLL
Symbol Characteristic Test Conditions MIN TYP MAX UNIT
Ciss Input Capacitance 4350
VGS = 0V
Coss Output Capacitance VDS = 25V 715 pF
Crss Reverse Transfer Capacitance f = 1 MHz 120
Qg Total Gate Charge 3 VGS = 10V 154
Qgs VDD = 500V
Gate-Source Charge 26 nC
ID = 23A @ 25°C
Qgd Gate-Drain ("Miller") Charge 97
RESISTIVE SWITCHING
td(on) Turn-on Delay Time 10
VGS = 15V
tr Rise Time VDD = 500V 5
td(off) ID = 23A @ 25°C ns
Turn-off Delay Time 30
RG = 1.6Ω
tf Fall Time 8
INDUCTIVE SWITCHING @ 25°C
Eon Turn-on Switching Energy 6 639
VDD = 670V, VGS = 15V
Eoff Turn-off Switching Energy ID = 23A, RG = 5Ω 380
Eon INDUCTIVE SWITCHING @ 125°C µJ
Turn-on Switching Energy 6
VDD = 670V VGS = 15V
1046
Eoff Turn-off Switching Energy ID = 23A, RG = 5Ω 451
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions MIN TYP MAX UNIT
IS Continuous Source Current (Body Diode) 21
Amps
ISM Pulsed Source Current 1 (Body Diode) 84
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID21A) 1.3 Volts
t rr Reverse Recovery Time (IS = -ID21A, dl S/dt = 100A/µs) 560 ns
Q rr Reverse Recovery Charge (IS = -ID21A, dl S/dt = 100A/µs) 5.5 µC
dv/
dt Peak Diode Recovery dv/
dt
5 10 V/ns

THERMAL CHARACTERISTICS
Symbol Characteristic MIN TYP MAX UNIT
RθJC Junction to Case 0.27
°C/W
RθJA Junction to Ambient 40
1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting Tj = +25°C, L = 11.34mH, RG = 25Ω, Peak IL = 21A
temperature 5 dv/dt numbers reflect the limitations of the test circuit rather than the
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% device itself. IS ≤ -ID21A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.

0.30
Z JC, THERMAL IMPEDANCE (°C/W)

0.25 0.9

0.20 0.7

0.15 0.5 Note:

PDM
3-2003

t1
0.10
0.3
t2

Duty Factor D = t1/t2

050-7015 Rev D

0.05
0.1 Peak TJ = PDM x ZθJC + TC
0.05 SINGLE PULSE
0
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves APT10045JLL
60
RC MODEL
Junction

ID, DRAIN CURRENT (AMPERES)

temp. ( ”C) 50
7V
VGS =15 & 8V
0.0409 0.0246F
40
6.5V

Power 30
0.225 0.406F
(Watts) 6V

20
5.5V
0.00361 148F
10
Case temperature 5V
0
0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

80 1.40
NORMALIZED TO
VDS> ID (ON) x RDS (ON)MAX.
V = 10V @ 11.5A
70 250µSEC. PULSE TEST GS
ID, DRAIN CURRENT (AMPERES)

@ <0.5 % DUTY CYCLE 1.30

60
1.20
50
VGS=10V
40 1.10

30 VGS=20V
1.00
20
TJ = +125°C
TJ = -55°C 0.90
10 TJ = +25°C
0 0.80
0 2 4 6 8 10 0 10 20 30 40 50
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
25 1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
ID, DRAIN CURRENT (AMPERES)

1.10
20
VOLTAGE (NORMALIZED)

1.05
15

1.00
10
0.95

5
0.90

0 0.85
50 75 25
100 125 150 -50 -25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

2.5 1.2
I = 11.5A
D
V = 10V
GS
VGS(TH), THRESHOLD VOLTAGE

2.0 1.1

1.0
(NORMALIZED)
(NORMALIZED)

1.5

0.9
1.0
0.8
3-2003

0.5
0.7
050-7015 Rev D

0.0 0.6
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
 Typical Performance Curves APT10045JLL
83 20,000
OPERATION HERE 10,000
50

ID, DRAIN CURRENT (AMPERES)

LIMITED BY RDS (ON)
Ciss
100µS

C, CAPACITANCE (pF)
1,000
Coss
10

1mS
100 Crss

TC =+25°C 10mS
TJ =+150°C
SINGLE PULSE
1 10
1 10 100 1000 0 10 20 30 40 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200

IDR, REVERSE DRAIN CURRENT (AMPERES)

16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

I = 23A
D
100

12
VDS=200V

VDS=500V TJ =+150°C
8 VDS=800V TJ =+25°C
10

0 1
50 100 150 0
200 250 0.3 0.5 0.7 0.9 1.1 1.3 1.5
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
160 60
V = 670V
DD
R = 5Ω
140 td(off) G
50 T = 125°C
J tf
120 L = 100µH
td(on) and td(off) (ns)

V
DD
= 670V 40
100
tr and tf (ns)

R = 5Ω
G
T = 125°C
J
80 30
L = 100µH

60
20 tr
40
10
20 td(on)

0 0
0 20 10 30 40 0 20 10 30 40
ID (A) ID (A)
FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT
2000 4000
V = 670V
DD
R = 5Ω 3500
G
Eon
T = 125°C
J Eoff
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)

1500 L = 100µH 3000

EON includes
diode reverse recovery. 2500
Eon
1000 2000

1500 V
DD
= 670V
3-2003

I = 23A
D
500 1000 T = 125°C
J
L = 100µH
500 E ON includes
050-7015 Rev D

Eoff diode reverse recovery.

0 0
0 5
20 25 10
30 35 40 15 0 5
10 15 20 25 30 35 40 45 50
ID (A) RG, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
 APT10045JLL

Gate Voltage
10 % 90%
Gate Voltage T = 125 C
T = 125 C J
J
td(on) t
d(off)

tr

Drain Current Drain Voltage

5% 5% 90%
90% 10%
Drain Voltage Drain Current
10 % 0
t
f

Switching Energy Switching Energy

Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions

APT15DF120B

V DD IC V CE

D.U.T.

Figure 20, Inductive Switching Test Circuit

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)
31.5 (1.240) 12.2 (.480)
31.7 (1.248) 8.9 (.350)
7.8 (.307) W=4.1 (.161) 9.6 (.378)
8.2 (.322) W=4.3 (.169) Hex Nut M4
H=4.8 (.187) (4 places)
H=4.9 (.193)
(4 places)

25.2 (0.992)
r = 4.0 (.157)
(2 places) 4.0 (.157) 0.75 (.030) 12.6 (.496) 25.4 (1.000)
4.2 (.165) 0.85 (.033) 12.8 (.504)
(2 places)

3.3 (.129) 1.95 (.077)

3.6 (.143) 2.14 (.084)
3-2003

14.9 (.587) * Source Drain

15.1 (.594)
30.1 (1.185) * Source terminals are shorted
30.3 (1.193)
050-7015 Rev D

internally. Current handling

38.0 (1.496) capability is equal for either
38.2 (1.504) Source terminal.

* Source Gate
Dimensions in Millimeters and (Inches)