DATA SHEET

BIPOLAR ANALOG INTEGRATED CIRCUIT

µPC4071
J-FET INPUT LOW-NOISE OPERATIONAL AMPLIFIER

DESCRIPTION
The µPC4071 is a J-FET input operational amplifier. This product is designed as low noise version of the µPC4081.
The features of the µPC4071 are more improved input equivalent noise voltage, input offset voltage and input bias
current than those of µPC4081. By these features, the µPC4071 is excellent choice for wide variety of applications
including audio preamplifier and active filter.

FEATURES
• Low noise: en = 18 nV/ Hz (TYP.)
• Very low input bias and offset currents
• Output short circuit protection
• High input impedance...J-FET Input stage
• Internal frequency compensation
• High slew rate...13 V/µs (TYP.)

ORDERING INFORMATION
Part Number Package
µPC4071C 8-pin plastic DIP (7.62 mm (300))
µPC4071G2 8-pin plastic SOP (5.72 mm (225))

EQUIVALENT CIRCUIT PIN CONFIGURATION (Top View)

µ PC4071C, 4071G2
+
V
(7)
R1
Q9 OFFSET
1 8 NC
Q5 Q14 NULL
(2) Q12
II Q1 Q2 Q8 R8 Q16 II 2 7 V+
Q10
IN
(3) R6 R9 _ +
C1 R10
Q6 Q13 Q15 IN 3 6 OUT
D1
Q7 OUT
(6) _
(1) Q3 Q4 (5) Q11 OFFSET
R11 D2 V 4 5 NULL
OFFSET R2 R3 R4 R5 R7
NULL –
V
OFFSET (4)
NULL
Remark NC : No Connection

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. G15204EJ4V0DS00 (4th edition) The mark ★ shows major revised points. © 1987
(Previous No. IC-1616)
Date Published November 2000 NS CP(K)
Printed in Japan
 µPC4071

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Parameter Symbol Ratings Unit

+ – Note 1
Voltage between V and V V+ – V– –0.3 to +36 V

Differential Input Voltage VID ±30 V

Note 2 – +
Input Voltage VI V –0.3 to V +0.3 V
Note 3 – +
Output Voltage VO V –0.3 to V +0.3 V
Note 4
Power Dissipation C Package PT 350 mW
Note 5
G2 Package 440 mW
Note 6
Output Short Circuit Duration Indefinite sec

Operating Ambient Temperature TA –20 to +80 °C

Storage Temperature Tstg –55 to +125 °C

Notes 1. Reverse connection of supply voltage can cause destruction.

2. The input voltage should be allowed to input without damage or destruction. Even during the transition
period of supply voltage, power on/off etc., this specification should be kept. The normal operation will
establish when the both inputs are within the Common Mode Input Voltage Range of electrical
characteristics.
3. This specification is the voltage which should be allowed to supply to the output terminal from external
without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this
specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of
electrical characteristics.
4. Thermal derating factor is –5.0 mV/°C when operating ambient temperature is higher than 55°C.
5. Thermal derating factor is –4.4 mV/°C when operating ambient temperature is higher than 25°C.
6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4
and Note 5.

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol MIN. TYP. MAX. Unit

Supply Voltage V± ±5 ±16 V

Output Current IO ±10 mA

Capacitive Load (AV = +1, Rf = 0 Ω) CL 100 pF

OFFSET VOLTAGE NULL CIRCUIT

2 _
★ Remark The OFFSET NULL pins should be left
6
–
open or connected to V via a resistor as
5
+
3 shown in the left figure. Don't connect to
1 –
100 kΩ any lines other than V , otherwise
VR1 mulfunction, degradation, or failure may
_ occur.
V

2 Data Sheet G15204EJ4V0DS

 µPC4071

ELECTRICAL CHARACTERISTICS (TA = 25°C, V± = ±15 V)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Input Offset Voltage VIO RS ≤ 50 Ω ±3 ±10 mV

±5 ±50
Note 7
Input Offset Current IIO pA
Note 7
Input Bias Current IB 30 200 pA

Large Signal Voltage Gain AV RL ≥ 2 kΩ , VO = ±10 V 25000 200000

Supply Current ICC IO = 0 A 2.0 2.7 mA

Common Mode Rejection Ratio CMR 70 86 dB

Supply Voltage Rejection Ratio SVR 70 86 dB

Output Voltage Swing Vom RL ≥ 10 kΩ ±12 ±13.5 V

RL ≥ 2 kΩ ±10 ±12 V

Common Model Input Voltage Range VICM ±10 V

Slew Rate SR AV = 1 13 V/µs

Unity Gain Frequency funity 3 MHz

Input Equivalent Noise Voltage Vn RS = 100 Ω, f = 10 Hz to 10 kHz 4 µVr.m.s.

Input Equivalent Noise Voltage Density en RS = 100 Ω, f = 1 kHz 18 nV/√Hz

Input Offset Voltage VIO RS ≤ 50 Ω, TA = –20 to +70°C ±13 mV

Average VIO Temperature Drift ∆VIO/∆T TA = –20 to +70°C ±10 µV/°C

±2
Note 7
Input Offset Current IIO TA = –20 to +70°C nA
Note 7
Input Bias Current IB TA = –20 to +70°C 7 nA

Notes 7. Input bias currents flow into IC. Because each currents are gate leak current of P-channel J-FET on input
stage. And that are temperature sensitive. Short time measuring method is recommendable to maintain the
junction temperature close to the operating ambient temperature.

Data Sheet G15204EJ4V0DS 3

 µPC4071

TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25°C, TYP.)

POWER DISSIPATION OPEN LOOP FREQUENCY RESPONSE

600 120
V± = ±15 V
PT - Total Power Dissipation - mW

RL = 2 kΩ

AV - Open Loop Voltage Gain - dB

500 100
µ PC4071G2

400 80
µ PC4071C 200°C/W

300 60

200 227°C/W 40

100 20

0
0 20 40 60 80 100
1 10 100 1k 10 k 100 k 1 M 10 M
TA - Operating Ambient Temperature - °C
f - Frequency - Hz

INPUT OFFSET VOLTAGE INPUT BIAS CURRENT

5 100
V± = ±15 V V± = ±15 V
4
IB - Input Bias Current - nA
VIO - Input Offset Voltage - mV

3
10
2

1
1.0
0

−1
0.1
−2

−3

−4 0.01
−20 0 20 40 60 80
−5
−40 −20 0 20 40 60 80 TA - Operating Ambient Temperature - °C

TA - Operating Ambient Temperature - °C

LARGE SIGNAL FREQUENCY RESPONSE OUTPUT VOLTAGE SWING

30 40
V ± = ±15 V RL = 10 kΩ RL = 10 kΩ
Vom - Output Voltage Swing - Vp-p
Vom - Output Voltage Swing - Vp-p

30
20
V ± = ±10 V
20

10
V ± = ±5 V 10

0
100 1k 10 k 100 k 1M 10 M 0 ±10 ±20
f - Frequency - Hz V± - Supply Voltage - V

4 Data Sheet G15204EJ4V0DS

 µPC4071

OUTPUT VOLTAGE SWING SUPPLY CURRENT

30 2.5
V ± = ±15 V

ICC - Supply Current - mA

2.0
Vom - Output Voltage Swing - Vp-p

20 1.5

1.0

10
0.5

0 ±5 ±10 ±15 ±20

0 ±
V - Supply Voltage - V
100 300 1k 3k 10 k
RL - Load Resistance - Ω

INPUT EQUIVALENT NOISE VOLTAGE DENSITY VOLTAGE FOLLOWER PULSE RESPONSE

VI - Input Voltage - V / VO - Output Voltage - V

4
10
V ± = ±15 V AV = +1
RS = 100 Ω 5 RL = 2 kΩ
CL = 100 pF
Voltage Density - nV/ Hz

V± = ±15 V
3
10
en - Input Equivalent Noise

2 −5
10
5

10 0

−5
1
10 100 1k 10 k 100 k
0 1 2 3 4
f - Frequency - Hz
t - Time - µs

Data Sheet G15204EJ4V0DS 5

 µPC4071

★ PACKAGE DRAWINGS (Unit : mm)

8-PIN PLASTIC DIP (7.62mm(300))

8 5

1 4

K
J
I P L

H C
G B M R
F
D N M

NOTES ITEM MILLIMETERS

1. Each lead centerline is located within 0.25 mm of A 10.16 MAX.
its true position (T.P.) at maximum material condition. B 1.27 MAX.
C 2.54 (T.P.)
2. ltem "K" to center of leads when formed parallel. D 0.50±0.10
F 1.4 MIN.
G 3.2±0.3
H 0.51 MIN.
I 4.31 MAX.
J 5.08 MAX.
K 7.62 (T.P.)
L 6.4

M 0.25 +0.10
−0.05
N 0.25
P 0.9 MIN.
R 0∼15°
P8C-100-300B,C-2

6 Data Sheet G15204EJ4V0DS

 µPC4071

8-PIN PLASTIC SOP (5.72 mm (225))

8 5

detail of lead end

1 4

A
H
F
I J
G

B L
C N S
K

D M M

NOTE ITEM MILLIMETERS

5.2 +0.17
Each lead centerline is located within 0.12 mm of
A −0.20
its true position (T.P.) at maximum material condition.
B 0.78 MAX.
C 1.27 (T.P.)

D 0.42 +0.08
−0.07
E 0.1±0.1
F 1.59±0.21
G 1.49
H 6.5±0.3
I 4.4±0.15
J 1.1±0.2

K 0.17 +0.08
−0.07
L 0.6±0.2
M 0.12
N 0.10

P 3° +7°
−3°
S8GM-50-225B-6

Data Sheet G15204EJ4V0DS 7

 µPC4071

★ RECOMMENDED SOLDERING CONDITIONS

When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering
processes are used, or if the soldering is performed under different conditions, please make sure to consult with our
sales offices.
For more details, refer to our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY
MANUAL"(C10535E).

Type of Surface Mount Device

µPC4071G2: 8-pin plastic SOP (5.72 mm (225))

Process Conditions Symbol

Infrared Ray Reflow Peak temperature: 230°C or below (Package surface temperature), IR30-00-1
Reflow time: 30 seconds or less (at 210°C or higher),
Maximum number of reflow processes: 1 time.

Vapor Phase Soldering Peak temperature: 215°C or below (Package surface temperature), VP15-00-1
Reflow time: 40 seconds or less (at 200°C or higher),
Maximum number of reflow processes: 1 time.

Wave Soldering Solder temperature: 260°C or below, Flow time: 10 seconds or less, WS60-00-1
Maximum number of flow processes: 1 time,
Pre-heating temperature: 120°C or below (Package surface temperature).

Partial Heating Method Pin temperature: 300°C or below, –

Heat time: 3 seconds or less (Per each side of the device).

Caution Apply only one kind of soldering condition to a device, except for "partial heating method", or the
device will be damaged by heat stress.

Type of Through-hole Device

µPC4071C: 8-pin plastic DIP (7.62 mm (300))

Process Conditions

Wave Soldering Solder temperature: 260°C or below,

(only to leads) Flow time: 10 seconds or less.

Partial Heating Method Pin temperature: 300°C or below,

Heat time: 3 seconds or less (per each lead).

Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure
that the package body does not get jet soldered.

8 Data Sheet G15204EJ4V0DS

 µPC4071

[MEMO]

Data Sheet G15204EJ4V0DS 9

 µPC4071

[MEMO]

10 Data Sheet G15204EJ4V0DS

 µPC4071

[MEMO]

Data Sheet G15204EJ4V0DS 11

 µPC4071

• The information in this document is current as of November, 2000. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
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M8E 00. 4