The document describes the bipolar junction transistor (BJT) including its structure, operation, and characteristics. It discusses:
- The BJT has three terminals (emitter, base, collector) and two p-n junctions (emitter-base, collector-base). Current flows from emitter to collector when the base-emitter junction is forward biased.
- In active mode, a small base current causes a much larger collector current. The common emitter current gain β relates the currents.
- BJT IV characteristics include the iC-vCB curve showing early effect and saturation, and the iC-vCE curve distinguishing active and saturation regions.
- Examples are given
The document describes the bipolar junction transistor (BJT) including its structure, operation, and characteristics. It discusses:
- The BJT has three terminals (emitter, base, collector) and two p-n junctions (emitter-base, collector-base). Current flows from emitter to collector when the base-emitter junction is forward biased.
- In active mode, a small base current causes a much larger collector current. The common emitter current gain β relates the currents.
- BJT IV characteristics include the iC-vCB curve showing early effect and saturation, and the iC-vCE curve distinguishing active and saturation regions.
- Examples are given
The document describes the bipolar junction transistor (BJT) including its structure, operation, and characteristics. It discusses:
- The BJT has three terminals (emitter, base, collector) and two p-n junctions (emitter-base, collector-base). Current flows from emitter to collector when the base-emitter junction is forward biased.
- In active mode, a small base current causes a much larger collector current. The common emitter current gain β relates the currents.
- BJT IV characteristics include the iC-vCB curve showing early effect and saturation, and the iC-vCE curve distinguishing active and saturation regions.
- Examples are given
The document describes the bipolar junction transistor (BJT) including its structure, operation, and characteristics. It discusses:
- The BJT has three terminals (emitter, base, collector) and two p-n junctions (emitter-base, collector-base). Current flows from emitter to collector when the base-emitter junction is forward biased.
- In active mode, a small base current causes a much larger collector current. The common emitter current gain β relates the currents.
- BJT IV characteristics include the iC-vCB curve showing early effect and saturation, and the iC-vCE curve distinguishing active and saturation regions.
- Examples are given
Minh Thuy LE Department of Instrumentation and Industrial Informatics (3I), School of Electrical Engineering (SEE), Hanoi University of Science and Technology (HUST), Vietnam
thuy.leminh@hust.edu.vn
28/10/2022 1 Contents 1. Introduction 2. Structure of BJT 3. BJT Operation 4. Practice exercise
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Contents 1. Introduction 2. Structure of BJT 3. BJT Operation 4. Practice exercise
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1. Introduction • BJT was invented in 1948 at Bell Telephone Lab • MOSFETs were known before BJTs, but they have only become widely used in IC manufacture since the 1980s. • Nowadays BJT is employed in: - High-power electronic components - High-frequency IC • Applications: - Electronic devices in automotive - Wireless communication devices
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Contents 1. Introduction 2. Structure of BJT 3. BJT Operation 4. Practice exercise
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2. Structure of BJT
npn-type BJT
pnp-type BJT
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2. Structure of BJT
• BJT has 3 terminals:
- Emitter (E) - Base (B) - Collector (C) • BJT has 2 p-n junctions: - Emitter-base junction (EBJ) - Collector-base junction (CBJ) • The operation of BJT depends on the bias of these p-n junctions
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Contents 1. Introduction 2. Structure of BJT 3. BJT Operation 4. Practice exercise
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3. BJT operation
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Active mode
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Current in active mode
• EBJ is forward-biased o Electrons diffuse from E → B o Holes diffuse from B → E o In the base, only a few electrons combine with the holes, and most move closer to the CBJ. • CBJ is reverse-biased o Electrons in the base flow through CBJ under the effect of electric field. o A few holes from the collector flow through CBJ into the base
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Current in active mode
• If we see from E, B, C terminals, there are 3 currents:
iE, iB and iC, respectively: iC = iB iE = iB + iC = (1 + )iB = +1 iC = iE - 𝛽: common emitter current gain - 𝛼: common base current gain - 𝛽 is normally very large (𝛼 ≈ 1) 28/10/2022 Electronic Design – Le Minh Thuy 12 Ebers-Moll (EM) model • The EM model allows to define all operating modes of the BJT. • Ebers-Moll expression: iE = iDE − RiDC iC = −iDC + F iDE V iDE = iSE exp BE − 1 VT VBC iDC = iSC exp − 1 V T F iSE = RiSC EM model of npn
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Active mode of pnp • The operation of pnp is similar to pnp. npn • The only difference is that the current is mainly generated by the holes from E to B .
iC-vCB characteristic • Measure iC-vCB characteristic: For a specific value of iE, measure iC when vCB varies. • In the active region: o ic slightly increases when vCB increases when iE is kept constant → Early effect o When vCB is large, ic increases rapidly → breakdown phenomenon o 𝛼 coefficient: has 2 definitions (in fact, these 2 coefficients are not much different) iC total 𝛼 coefficient or large signal 𝛼 coefficient iE
iC small signal 𝛼 coefficient iE vCB = const 28/10/2022 Electronic Design – Le Minh Thuy 18 iC-vCB characteristic • In the saturation region: o vCB < -0.4 V o Normally vBE = 0.7 V → vCE(saturation) = 0.1 to 0.3 V
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Early effect • In the active region: o Ideally: iC = iE → iC-vCB characteristic is a horizontal line o In fact: when vCB increases → ic increases → Early effect • At the common emitter circuit (see the figure in the next slide), for a specific vBE, we have different values of iC when vCE varies o According to EM model, when vBE = const, iC is slightly dependent on vCE (because vBC < 0) o In fact, iC may be dependent on vCE (or vBC) o If we stretch iC-vCE lines in the active region, they will intersect at the VA point called Early voltage (from 50 V to 100 V)
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Early effect
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iC-vCE characteristic
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Active region iC F dc DC current gain iB
iC ac = AC current gain iB vCE = const
• The DC and AC current gains in practice often differ
from 10% to 20% • dc depends on the Q-point • For approximate analysis, we often assume that dc is constant
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Saturation region
• At the X point in saturation region
iCsat FiB iCsat forced iB forced F
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Contents 1. Introduction 2. Structure of BJT 3. BJT Operation 4. Practice exercise
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Exercise 1:
Determine 𝐼𝐵 , 𝐼𝐶 , 𝐼𝐸 , 𝑉𝐵 and 𝑉𝐶 where 𝛽𝐷𝐶 = 50
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Exercise 2: The manufacturer’s specification for a 2N3904 transistor shows that 𝛽𝐷𝐶 has a range from 100 to 300. Assume a 2N3904 is used in the base-biased circuit shown in the figure. Compute the minimum and maximum collector current based on this specification.
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Exercise 3: The manufacturer’s specification for a 2N3904 transistor shows that 𝛽𝐷𝐶 has a range from 100 to 300. Assume a 2N3904 is used in the collector-biased circuit shown in the figure. Compute the minimum and maximum collector current based on this specification.
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Exercise 4: Find 𝑉𝐵 , 𝑉𝐸 , 𝐼𝐸 , 𝐼𝐶 , and 𝑉𝐶𝐸 for the circuit in the figure
