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    Lab Sheet 5

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    Inimatic .Syndrome
    This document provides instructions for an electronics lab experiment to: 1. Measure the output characteristics of an NPN transistor in a common emitter configuration by varying the base current and collecting voltage and current values. 2. Draw the output characteristic curves on a graph and determine values like beta. 3. Connect the transistor in a voltage divider biasing circuit and measure the quiescent (Q) point on the curves for different load resistances.

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    Lab Sheet 5

    Uploaded by

    Inimatic .Syndrome
    11 views5 pages
    This document provides instructions for an electronics lab experiment to: 1. Measure the output characteristics of an NPN transistor in a common emitter configuration by varying the base current and collecting voltage and current values. 2. Draw the output characteristic curves on a graph and determine values like beta. 3. Connect the transistor in a voltage divider biasing circuit and measure the quiescent (Q) point on the curves for different load resistances.

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    Lab sheet 5

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    This document provides instructions for an electronics lab experiment to: 1. Measure the output characteristics of an NPN transistor in a common emitter configuration by varying the base current and collecting voltage and current values. 2. Draw the output characteristic curves on a graph and determine values like beta. 3. Connect the transistor in a voltage divider biasing circuit and measure the quiescent (Q) point on the curves for different load resistances.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    11 views5 pages

    Lab Sheet 5

    Uploaded by

    Inimatic .Syndrome
    This document provides instructions for an electronics lab experiment to: 1. Measure the output characteristics of an NPN transistor in a common emitter configuration by varying the base current and collecting voltage and current values. 2. Draw the output characteristic curves on a graph and determine values like beta. 3. Connect the transistor in a voltage divider biasing circuit and measure the quiescent (Q) point on the curves for different load resistances.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    FAKULTI TEKNOLOGI KEJURUTERAAN ELEKTRIK DAN ELEKTRONIK

    Lab 5 BJT Characteristic [30 Marks]

    BTE3212
    Electronics 1 Laboratory

    COURSE OUTCOME & PO MAPPING


    CO Statement Mapped PO
    CO1 Measure electronics devices characteristics (P3) PO5
    CO2 Construct electric circuits and measure electronics parameters using diode and PO5
    transistors (P5)
    KNOWLEDGE PROFILE / PROBLEM SOLVING / ENGINEERING ACTIVITIES MAPPING

    Submission Due Date : No. of Group Member :


    Type of Assessment : 1 – LAB REPORT 2 – PRESENTATION/DEMO 3 – PROJECT REPORT

    BTE3212 Electronics 1 Lab 2022/23-SEM I


    BTE3212 Electronic 1 Lab 2022/23-SEM I

    GROUP MEMBERS:
    No. Student ID Student Name Section/Grp
    1
    2
    3
    4

    LAB OBJECTIVE

    1. Study the output characteristics of NPN transistor in common emitter configuration.


    2. Learn the use of characteristic curves for graphical analysis of an amplifier by drawing load
    line and finding Q point.

    EQUIPMENT REQUIRED

    1. Digital oscilloscope
    2. Function generator
    3. Power supply

    COMPONENTS

    1. Resistor 220Ω, 1kΩ, 4.7kΩ, 6.8kΩ, 100kΩ


    2. Transistor 2N2222

    THEORY
    A Bipolar Junction Transistor (BJT) is a three-terminal semiconductor device capable of
    amplifying an ac signal. The three terminals are called the emitter, the base, and the collector.
    The device is made up three “layers” of p-type and n-type semiconductor material. BJTs consist
    of a thin base layer (either P- or N-type) sandwiched between two layers of the opposite type of
    material. Thus, BJTs are either NPN or PNP. They are somewhat like two interconnected, back
    toback diodes, with two diode junctions. The NPN 2N2222 BJTs are illustrated in Figure 1.

    2
    BTE3212 Electronic 1 Lab 2022/23-SEM I

    Figure 1: Bottom view of 2N2222 Figure 2: Common emitter configuration

    EXPERIMENTAL PROCEDURE

    1. Connect the common emitter (CE) circuit as shown in Figure 2.


    2. Measure the output characteristics i.e. IC versus VCE for different values of base
    current IB. (First, you must change the source VBB until you get the required value
    of IB, then increase the value of VCC according to Table 1, measure the values of IC
    and VCE and calculate βdc and βac. Do not exceed VCE beyond 10V)
    3. Based on the results obtained in Table 1, draw the output characteristics of 2N2222
    transistor.
    4. Connect circuit in Figure 3.
    5. Measure Q point for RC= 4.7 KΩ, 10 KΩ and record in Table 2.
    6. Draw load line and Q points on the same graph of output characteristics.

    3
    BTE3212 Electronic 1 Lab 2022/23-SEM I

    Figure 3: Voltage divider biasing circuit

    Table 1: Characteristic data


    IB=10µA IB=20µA IB=30µA IB=40µA
    VCC IC VCE IC VCE IC VCE IC VCE
    0
    1
    2
    3
    6
    12
    18
    βdc = βac= βdc = βac=

    Table 2
    Measured Calculated
    Q-point
    RC = 4.7 KΩ RC = 10 KΩ RC = 4.7 KΩ RC = 10 KΩ
    VCE
    IC

    4
    BTE3212 Electronic 1 Lab 2022/23-SEM I

    Output Characteristic

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