3 V/5 V CMOS

0.5 Ω SPDT/2:1 Mux in SC70

ADG849
FEATURES FUNCTIONAL BLOCK DIAGRAM
Ultralow on-resistance: ADG849
0.5 Ω typical
S2
0.8 Ω maximum at 5 V supply
D
Excellent audio performance, ultralow distortion: S1

0.13 Ω typical
IN
0.24 Ω maximum RON flatness

04737-0-001
High current carrying capability: SWITCHES SHOWN
400 mA continuous current FOR A LOGIC 1 INPUT

600 mA peak current at 5 V Figure 1.

Automotive temperature range: –40°C to +125°C
Rail-to-rail operation
Typical power consumption (<0.01 µW)
Pin-compatible upgrade for the ADG749 and ADG779

APPLICATIONS
Cellular phones
PDAs
Battery-powered systems
Audio and video signal routing
Modems
PCMCIA cards
Hard drives
Relay replacement

GENERAL DESCRIPTION PRODUCT HIGHLIGHTS

1. Very low on-resistance, 0.5 Ω typical.
The ADG849 is a monolithic, CMOS SPDT (single pole, double 2. Tiny, 6-lead SC70 package.
throw) switch that operates with a supply range of 1.8 V to 5.5 V. 3. Low power dissipation. The CMOS construction ensures
It is designed to offer ultralow on-resistance values of typically low power dissipation.
0.5 Ω. This design makes the ADG849 an ideal solution for 4. High current carrying capability.
applications that require minimal distortion through the switch. 5. Low THD + noise (0.01% typ).
The ADG849 also has the capability of carrying large amounts
of current, typically 600 mA at 5 V operation.

Each switch of the ADG849 conducts equally well in both

directions when on. The device exhibits break-before-make
switching action, thus preventing momentary shorting when
switching channels.

The ADG849 is available in a tiny, 6-lead SC70 package, making

it the ideal candidate for space-constrained applications.

Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
or otherwise under any patent or patent rights of Analog Devices. Trademarks and Tel: 781.329.4700 www.analog.com
registered trademarks are the property of their respective owners. Fax: 781.326.8703 © 2004 Analog Devices, Inc. All rights reserved.
ADG849

TABLE OF CONTENTS
Specifications..................................................................................... 3 Typical Performance Characteristics ..............................................7

Absolute Maximum Ratings............................................................ 5 Test Circuits........................................................................................9

ESD Caution.................................................................................. 5 Outline Dimensions ....................................................................... 11

Pin Configuration and Function Descriptions............................. 6 Ordering Guide .......................................................................... 11

REVISION HISTORY
7/04—Revision 0: Initial Version

Rev. 0| Page 2 of 12
 ADG849

SPECIFICATIONS
Table 1. VDD = 4.5 V to 5.5 V, GND = 0 V1
–40°C to –40°C to
Parameter +25°C +85°C +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On-Resistance (RON) 0.5 Ω typ VS = 0 V to VDD, IDS = –100 mA
0.6 0.7 0.8 Ω max See Figure 15
On-Resistance Match Between Channels
0.05 Ω typ VS = 0.85 V, IDS = –100 mA
(∆RON)
0.095 0.11 0.125 Ω max
On-Resistance Flatness (RFLAT(ON)) 0.13 Ω typ VS = 0 V to VDD, IDS = –100 mA
0.18 0.22 0.24 Ω max
LEAKAGE CURRENTS VDD = 5.5 V
Source Off Leakage, IS (Off ) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V,
see Figure 16
Channel On Leakage, ID, IS (On) ±0.04 nA typ VS = VD = 1 V, or VS = VD = 4.5 V,
see Figure 17
DIGITAL INPUTS
Input High Voltage, VINH 2.0 V min
Input Low Voltage, VINL 0.8 V max
Input Current
IINL or IINH 0.005 µA typ VIN = VINL or VINH
±0.1 µA max
CIN, Digital Input Capacitance 2.5 pF typ
DYNAMIC CHARACTERISTICS2
tON 11 ns typ RL = 50 Ω, CL = 35 pF
15 17 18 ns max VS = 3 V, see Figure 18
tOFF 9 ns typ RL = 50 Ω, CL = 35 pF
13 14 15 ns max VS = 3 V, see Figure 18
Break-Before-Make Time Delay, tBBM 5 ns typ RL = 50 Ω, CL = 35 pF, VS1 = VS2 = 3 V,
see Figure 19
1 ns min
Charge Injection 50 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 20
Off Isolation –64 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz
see Figure 21
Channel-to-Channel Crosstalk –64 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz,
see Figure 22
Bandwidth: –3 dB 38 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 23
Insertion Loss 0.04 dB typ RL = 50 Ω, CL = 5 pF, see Figure 23
THD + N 0.01 % RL = 32 Ω, f = 20 Hz to 20 kHz,
Vs = 2 V p-p
CS (Off ) 52 pF typ
CD, CS (On) 145 pF typ
POWER REQUIREMENTS VDD = 5.5 V, Digital Inputs = 0 V or 5.5 V
IDD 0.001 µA typ
1.0 µA max

1
The temperature range for the Y version is –40°C to +125°C.
2
Guaranteed by design, not subject to production test.

Rev. 0| Page 3 of 12
ADG849
Table 2. VDD = 2.7 V to 3.6 V, GND = 0 V1
–40°C to –40°C to
Parameter +25°C +85°C +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On-Resistance (RON) 0.72 Ω typ VS = 0 V to VDD, IDS = –100 mA
1.1 1.1 1.2 Ω max See Figure 15
On-Resistance Match Between Channels
0.05 Ω typ VS = 1.5 V, IDS = –100 mA
(∆RON)
0.095 0.11 0.125 Ω max
On-Resistance Flatness (RFLAT(ON)) 0.3 Ω typ VS = 0 V to VDD, IDS = –100 mA
LEAKAGE CURRENTS VDD = 3.6 V
Source Off Leakage, IS (Off ) ±0.1 nA typ VS = 3 V/1 V, VD = 1 V/3 V, see Figure 16
Channel On Leakage, ID, IS (On) ±0.01 nA typ VS = VD = 1 V, or VS = VD = 3 V;
see Figure 17
DIGITAL INPUTS
Input High Voltage, VINH 2.0 V min
Input Low Voltage, VINL 0.8 V max VDD = 3 V to 3.6 V
0.7 V max VDD = 2.7 V
Input Current
IINL or IINH 0.005 µA typ VIN = VINL or VINH
±0.1 µA max
CIN, Digital Input Capacitance 2.5 pF typ
DYNAMIC CHARACTERISTICS2
tON 16 ns typ RL = 50 Ω, CL = 35 pF
22 24 26 ns max VS = 1.5 V, see Figure 18
tOFF 13 ns typ RL = 50 Ω, CL = 35 pF
18 20 22 ns max VS = 1.5 V, see Figure 18
Break-Before-Make Time Delay, tBBM 7 ns typ RL = 50 Ω, CL = 35 pF, VS1 = VS2 = 1.5 V,
see Figure 19
1 ns min
Charge Injection 30 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 20
Off Isolation –64 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz,
see Figure 21
Channel-to-Channel Crosstalk –64 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz,
see Figure 22
Bandwidth: –3 dB 38 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 23
Insertion Loss 0.04 dB typ RL = 50 Ω CL = 5 pF, see Figure 23
THD + N 0.02 % RL = 32 Ω, f = 20 Hz to 20 kHz,
Vs = 1 V p-p
CS (Off ) 55 pF typ f = 1 MHz
CD, CS (On) 147 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = 3.6 V
Digital Inputs = 0 V or 3.6 V
IDD 0.001 µA typ
1.0 µA max

1
The temperature range for the Y version is –40°C to +125°C.
2
Guaranteed by design, not subject to production test.

Rev. 0| Page 4 of 12
 ADG849

ABSOLUTE MAXIMUM RATINGS

Table 3. TA = 25°C, unless otherwise noted
Table 4. Truth Table
Parameter Rating
IN Switch S1 Switch S2
VDD to GND –0.3 V to +7 V
Analog Inputs1 –0.3 V to VDD + 0.3 V or 30 mA, 0 On Off
whichever occurs first 1 Off On
Digital Inputs 1 –0.3 V to VDD + 0.3 V or 30 mA,
whichever occurs first
Peak Current, S or D 600 mA (pulsed at 1 ms, Stresses above those listed under Absolute Maximum Ratings
10% duty cycle maximum) may cause permanent damage to the device. This is a stress
Continuous Current, S or D 400 mA rating only; functional operation of the device at these or any
Operating Temperature Range other conditions above those listed in the operational sections
Extended –40°C to +125°C of this specification is not implied. Exposure to absolute
Storage Temperature Range –65°C to +150°C maximum rating conditions for extended periods may affect
Junction Temperature +150°C device reliability. Only one absolute maximum rating may be
SC70 Package applied at any one time.
θJA Thermal Impedance 332°C/W
θJC Thermal Impedance 120°C/W
Reflow Soldering
Peak Temperature 260(0/–5)°C
Time at Peak Temperature 10 sec to 40 sec

1
Overvoltages at IN, S, or D will be clamped by internal diodes. Current
should be limited to the maximum ratings given.

ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.

Rev. 0| Page 5 of 12
ADG849

PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

IN 1 6 S2
ADG849
VDD 2 D
TOP VIEW 5
(Not to Scale)

04737-0-002
GND 3 4 S1

Figure 2. Pin Configuration

Table 5. Terminology
Mnemonic Function
VDD Most Positive Power Supply Potential.
GND Ground (0 V) Reference.
IDD Positive Supply Current.
S Source Terminal. May be an input or output.
D Drain Terminal. May be an input or output.
IN Logic Control Input.
RON Ohmic Resistance between D and S.
∆RON On-Resistance Match Between any Two Channels i.e., RON Maximum to RON Minimum.
RFLAT(ON) Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the
specified analog signal range.
IS (Off ) Source Leakage Current with the Switch Off.
ID, IS (On) Channel Leakage Current with the Switch On.
VD (VS) Analog Voltage on Terminals D, S.
VINL Maximum Input Voltage for Logic 0.
VINH Minimum Input Voltage for Logic 1.
IINL (IINH) Input Current of the Digital Input.
CS (Off ) Off Switch Source Capacitance. Measured with reference to ground.
CD, CS (On) On Switch Capacitance. Measured with reference to ground.
tON Delay time between the 50% and 90% points of the digital input and switch on condition.
tOFF Delay time between the 50% and 90% points of the digital input and switch off condition.
tBBM On or off time measured between the 80% points of both switches when switching from one to another.
Charge A measure of the glitch impulse transfered from the digital input to the analog output during switching.
Injection
Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance.
Off Isolation A measure of unwanted signal coupling through an off switch.
Bandwidth The frequency at which the output is attenuated by 3 dB.
On-Response The frequency response of the on switch.
Insertion Loss The loss due to the on-resistance of the switch.
THD + N The ratio of harmonic amplitudes plus the noise of a signal to the fundamental.

Rev. 0| Page 6 of 12
 ADG849

TYPICAL PERFORMANCE CHARACTERISTICS

0.6 1.0
TA = 25°C
0.9
0.5
0.8
4.5V
+125°C
5V 0.7

ON RESISTANCE (Ω)
0.4
+85°C
5.5V 0.6
+25°C
RON (Ω)

0.3 0.5
–40°C
0.4
0.2
0.3

0.2
0.1
0.1

04737-0-003

04737-0-006
0 0
0 1 2 3 4 5 6 0 0.5 1.0 1.5 2.0 2.5 3.0
VS/VD (V) VS/VD (V)

Figure 3. On-Resistance vs. VD/VS, VDD = 5 V ±10% Figure 6. On-Resistance vs. Temperature, VDD = 3 V

0.9 120
VDD = 5V
0.8
2.5V 100
0.7
2.7V
0.6 80
3V
LEAKAGE (nA)

3.3V
0.5
RON (Ω)

3.6V 60
0.4 ID, IS (ON)

0.3 40

0.2
20
0.1 IS (OFF)

04737-0-017
04737-0-004

0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 20 40 60 80 100 120
TEMPERATURE (°C)
VS/VD (V)

Figure 4. On-Resistance vs. VD/VS, VDD = 2.5 V to 3.6 V Figure 7. Leakage Currents vs. Temperature, VDD = 5 V

0.8 90
VDD = 3V
0.7 80

70
0.6 +125°C
ON RESISTANCE (Ω)

+85°C 60
LEAKAGE (nA)

0.5 ID, IS (ON)

+25°C 50
0.4
–40°C 40
0.3
30

0.2
20
IS (OFF)
0.1 10
04737-0-018
04737-0-005

0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 10 20 40 60 80 100 120
TEMPERATURE (°C)
VS/VD (V)

Figure 5. On-Resistance vs. Temperature, VDD = 5 V Figure 8. Leakage Currents vs. Temperature, VDD = 3 V

Rev. 0| Page 7 of 12
ADG849
250 0
TA = 25°C
–10

200 VDD = 5V
–20
CHARGE INJECTION (pC)

OFF ISOLATION (dB)

–30
150
–40

–50
100
–60

–70
50
VDD = 3V –80 TA = 25°C
VDD = 5V/3V

04737-0-014
04737-0-011
0 –90
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 10k 100k 1M 10M 100M
FREQUENCY (MHz)
DRAIN VOLTAGE (V)

Figure 9. Charge Injection Figure 12. Off Isolation vs. Frequency

20 0

18
VDD = 3.3V –10
16
tON
–20
14
tOFF
CROSSTALK (dB)

VDD = 5V –30
12
TIME (ns)

tON
10 –40
tOFF
8
–50
6
–60
4
–70
2 TA = 25°C
VDD = 5V/3V

04737-0-015
04737-0-012

0 –80
–40 –20 0 20 40 60 80 100 120 10k 100k 1M 10M 100M
TEMPERATURE (°C) FREQUENCY (MHz)

Figure 10. tON/tOFF vs. Temperature Figure 13. Crosstalk vs. Frequency

1 0.10
VDD = 5V
0 0.09

–1 0.08

–2 0.07
ON RESPONSE (dB)

THD + N (%)

–3 0.06

–4 0.05

–5 0.04

–6 0.03

–7 0.02 1V p-p
2V p-p
–8 TA = 25°C 0.01
VDD = 5V/3V
04737-0-019
04737-0-013

–9 0
10k 100k 1M 10M 100M 20 40 60 80 100 120 140 160 180 200
FREQUENCY (MHz) FREQUENCY (kHz)

Figure 11. Bandwidth Figure 14. Total Harmonic Distortion + Noise

Rev. 0| Page 8 of 12
 ADG849

TEST CIRCUITS
IDS
IS (OFF) ID (OFF)
S D
ID (ON)
V1

04737-0-009
VS VD S D

04449-0-021
NC A
S D VD

04737-0-008
VS
RON = V1/IDS

Figure 15. On-Resistance Figure 16. Off-Leakage Figure 17. On-Leakage

VDD
0.1µF

VDD

VS S2
VOUT 50% 50%
S1 D VIN

RL CL
IN 50Ω 35pF 90% 90%
VOUT

04449-0-022
GND
tON tOFF

Figure 18. Switching Times, tON, tOFF

VDD
0.1µF

50% 50%
VDD VIN 0V

VS S2
VOUT VOUT
S1 D
80% 80%

RL CL
IN 50Ω 35pF
tBBM tBBM

04449-0-023
GND

Figure 19. Break-Before-Make Time Delay, tBBM

VDD

SW ON SW OFF
VIN
S2
NC
D
VS
S1
VOUT

IN 1nF
VOUT ∆VOUT
04449-0-024

GND QINJ = CL × ∆VOUT

Figure 20. Charge Injection

Rev. 0| Page 9 of 12
ADG849
VDD VDD
0.1µF
0.1µF

NETWORK
VDD ANALYZER NETWORK
ANALYZER VDD
S1
50Ω VOUT
S2 S1 50Ω RL
NC D
VS 50Ω R
S2 50Ω
D
VOUT
RL 50Ω

04449-0-025
50Ω
GND VS

GND

04737-0-016
VOUT VOUT
OFF ISOLATION = 20 LOG CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG
VS VS

Figure 21. Off Isolation Figure 22. Channel-to-Channel Crosstalk

VDD
0.1µF

NETWORK
VDD ANALYZER

50Ω
S2 S1
VS
D
VOUT
RL

04449-0-026
50Ω
GND

VOUT WITH SWITCH

INSERTION LOSS = 20 LOG
VOUT WITHOUT SWITCH

Figure 23. Bandwidth

Rev. 0| Page 10 of 12
 ADG849

OUTLINE DIMENSIONS
2.00 BSC

6 5 4
1.25 BSC 2.10 BSC
1 2 3

PIN 1
0.65 BSC
1.30 BSC
1.00
0.90 1.10 MAX
0.70
0.22
0.08 0.46
8° 0.36
0.10 MAX 0.30
SEATING 4° 0.26
0.15
PLANE 0°
0.10 COPLANARITY

COMPLIANT TO JEDEC STANDARDS MO-203AB

Figure 24. 6-Lead SC70 Package

[KS-6]
Dimensions shown in Millimeters

ORDERING GUIDE
Package
Model Temperature Range Package Description Option Branding1
ADG849YKSZ-500RL72 –40°C to +125°C SC70 (Plastic Surface Mount) KS-6 SNA
ADG849YKSZ-REEL2 –40°C to +125°C SC70 (Plastic Surface Mount) KS-6 SNA
ADG849YKSZ-REEL72 –40°C to +125°C SC70 (Plastic Surface Mount) KS-6 SNA

1
Branding on all packages is limited to three characters due to space constraints.
2
Z = Pb-free part.

Rev. 0| Page 11 of 12
ADG849

NOTES

© 2004 Analog Devices, Inc. All rights reserved. Trademarks and

registered trademarks are the property of their respective owners.
D04737-0-7/04(0)

Rev. 0| Page 12 of 12