RF Transceivers - Introduction
RF Transceivers - Introduction
RF Transceivers - Introduction
6. Power Amplifiers:
- PAE, Output matching, Baluns, Driver and multi-stage PA, Power control, Polar modulation.
- J. Rogers and C. Plett, Radio Frequency Integrated Circuit Design, Artech House, 2003.
- Gu, Qizheng, RF System Design of Transceivers for Wireless Communications, Springer, 2006.
Lecture Slides
Mainly adapted from:
-Razavi’s book slides
-RFIC course lectures of the following universities: Berkeley, MIT, UCSB, Texas A&M, Linkoping.
RF Communication
The module consists of a GSM850 / GSM900 PA block and a DCS1800 / PCS1900 PA block,
impedance-matching circuitry for 50 ohm input and output impedances, Tx harmonics filtering,
high linearity / low insertion loss RF switch, and a Power Amplifier Control (PAC) block.
The GaAs die, the CMOS die, the Switch die, and passive components are mounted on a multi-
layer laminate substrate. The assembly is encapsulated with plastic overmold.
Intel PMB5750 RF Transceiver
2019
RF IC in 10 GHz Spectrum
RF devices for DBS LNB
CMOS LNB
Two-Stage LNA of the LNB
The Single-Balanced Mixer with LO Buffer
Three-Stage IF Amplifier
CMOS LNB
RF IC in 60 GHz Spectrum
Evolution of Wireless Multimedia Services
CMOS 60GHz Two-Chip Wireless System WiGig IEEE802.11ad
SiGe 0.18 um BiCMOS
A 60 GHz, 802.11ad/WiGig-Compliant
Transceiver in 130 nmSiGe BiCMOS
The architecture of the fully-integrated 4x2 77GHz phased
array CMOS transceiver with integrated antennas
CMOS fully-integrated 4x2 77GHz phased
array transceiver with integrated antennas
Silicon RF IC in 300 GHz Spectrum
Attenuation of EM Waves in the Air
Typical THz Applications
A 219-266 GHz fully-integrated direct-conversion IQ receiver module in a SiGe HBT technology. European
Microwave Integrated Circuits Conference, October 2017.
Wireless digital data transmission from a 300-GHz CMOS transmitter. Electron. Lett. 2016.
A 300 GHz CMOS transmitter with 32-QAM 17.5 Gb/s/ch capability over six channels.
IEEE J. Solid-State Circuits 2016.
A fully integrated 240-GHz direct-conversion quadrature transmitter and receiver chipset in SiGe technology.
IEEE Trans. Microw. Theory Techn. 2016.
300 GHz integrated heterodyne receiver and transmitter with on-chip fundamental local oscillator & mixers.
IEEE Trans. Terahertz Sci. Technol. 2015.