HMC579

v01.0608
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 32 - 46 GHz OUTPUT

Typical Applications Features

2 The HMC579 is suitable for:

• Clock Generation Applications:
High Output Power: +13 dBm
Low Input Power Drive: 0 to +6 dBm
SONET OC-192 & SDH STM-64
Fo Isolation: >25 dBc @ Fout= 38 GHz
FREQUENCY MULTIPLIERS - ACTIVE - CHIP

• Point-to-Point & VSAT Radios

100 KHz SSB Phase Noise: -127 dBc/Hz
• Test Instrumentation
Single Supply: +5V@ 70 mA
• Military EW / Radar
Die Size: 1.18 mm x 1.23 mm x 0.1 mm
• Space

Functional Diagram General Description

The HMC579 die is a x2 active broadband frequency
multiplier utilizing GaAs PHEMT technology. When
driven by a +3 dBm signal, the multiplier provides
+13 dBm typical output power from 32 to 46 GHz.
The Fo isolation is >25 dBc at 38 GHz. The HMC579
is ideal for use in LO multiplier chains for Pt to Pt
& VSAT Radios yielding reduced parts count vs.
traditional approaches. The low additive SSB Phase
Noise of -127 dBc/Hz at 100 kHz offset helps main-
tain good system noise performance.

Electrical Specifi cations, TA = +25° C, Vdd1, Vdd2 = 5.0V, 3 dBm Drive Level
Parameter Min. Typ. Max. Units
Frequency Range, Input 16 - 23 GHz
Frequency Range, Output 32 - 46 GHz
Output Power 8 13 dBm
Fo Isolation (with respect to output level) 25 dBc
Input Return Loss 12 dB
Output Return Loss 8 dB
SSB Phase Noise (100 kHz Offset) -127 dBc/Hz
Supply Current (Idd1, Idd2) 70 mA

For price, delivery,

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact Hittite and to place
Microwave orders: Analog Devices, Inc.,
Corporation:
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
2 - 56 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343
781-329-4700Fax: 978-250-3373
• Order
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Order On-line at www.hittite.com
 HMC579
v01.0608
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 32 - 46 GHz OUTPUT

Output Power vs.

Temperature @ 3 dBm Drive Level Output Power vs. Drive Level
20
18
16
25
20
15
2
OUTPUT POWER (dBm)

OUTPUT POWER (dBm)

14 10

FREQUENCY MULTIPLIERS - ACTIVE - CHIP

12 5
10 0
8 -5
6 +25C -10
+85C
4 -55C -15 -6dBm 2dBm
-4dBm 4dBm
2 -20 -2dBm 6dBm
0dBm
0 -25
30 32 34 36 38 40 42 44 46 48 30 32 34 36 38 40 42 44 46 48
OUTPUT FREQUENCY (GHz) OUTPUT FREQUENCY (GHz)

Output Power vs.

Supply Voltage @ 3 dBm Drive Level Isolation @ 3 dBm Drive Level
20 20
18
16 10
OUTPUT POWER (dBm)

OUTPUT POWER (dBm)

14
12 0 Fo
2Fo
10
8 -10
6 4.5V
5.0V
4 5.5V -20
2
0 -30
30 32 34 36 38 40 42 44 46 48 30 32 34 36 38 40 42 44 46 48
OUTPUT FREQUENCY (GHz) OUTPUT FREQUENCY (GHz)

Output Power vs. Input Power

20

15
OUTPUT POWER (dBm)

10

-5 32GHz
39GHz
-10 46GHz

-15

-20
-10 -8 -6 -4 -2 0 2 4 6 8 10
INPUT POWER (dBm)

For price,
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact delivery,
Hittite and to place
Microwave orders: Analog Devices, Inc.,
Corporation:
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343
781-329-4700Fax:
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. 978-250-3373
• Order online at www.analog.com 2 - 57
Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
 HMC579
v01.0608
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 32 - 46 GHz OUTPUT

Input Return Loss vs. Temperature Output Return Loss vs. Temperature

2 0 0
-2

OUTPUT RETURN LOSS (dB)

+25C
INPUT RETURN LOSS (dB)

-5 +85C -4
-55C
-6
FREQUENCY MULTIPLIERS - ACTIVE - CHIP

-10 -8
-10
-15 -12
-14 +25C
+85C
-20 -16 -55C

-18
-25 -20
15 16 17 18 19 20 21 22 23 24 30 32 34 36 38 40 42 44 46 48
FREQUENCY (GHz) FREQUENCY (GHz)

For price,
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact delivery,
Hittite and to place
Microwave orders: Analog Devices, Inc.,
Corporation:
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
2 - 58 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.781-329-4700Fax: 978-250-3373
• Order online at www.analog.com
Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
 HMC579
v01.0608
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 32 - 46 GHz OUTPUT

Absolute Maximum Ratings Typical Supply Current vs. Vdd

RF Input (Vdd = +5V)
Supply Voltage (Vdd1, Vdd2)
+13 dBm
+6.0 Vdc
Vdd (V)
4.5
Idd (mA)
69 2
Channel Temperature 175 °C 5.0 70
Continuous Pdiss (T= 85 °C) 5.5 70

FREQUENCY MULTIPLIERS - ACTIVE - CHIP

656 mW
(derate 7.3 mW/°C above 85 °C)
Note:
Thermal Resistance
137 °C/W Multiplier will operate over full voltage range shown above.
(Channel to die bottom)
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS

Outline Drawing

Die Packaging Information [1] NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS].
2. DIE THICKNESS IS .004”
Standard Alternate [2]
3. TYPICAL BOND PAD IS .004” SQUARE.
GP-2 (Gel Pack) — 4. BOND PAD METALIZATION: GOLD
5. BACKSIDE METALIZATION: GOLD
[1] Refer to the “Packaging Information” section for die 6. BACKSIDE METAL IS GROUND.
packaging dimensions. 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS.
[2] Reference this suffix only when ordering alternate die 8. OVERALL DIE SIZE ± 0.002”
packaging.
For price, delivery,
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact Hittite and to place
Microwave orders: Analog Devices, Inc.,
Corporation:
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343
781-329-4700Fax: 978-250-3373
• Order
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. online at www.analog.com 2 - 59
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Order On-line at www.hittite.com
 HMC579
v01.0608
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 32 - 46 GHz OUTPUT

Pad Description

2 Pad Number Function Description Interface Schematic

FREQUENCY MULTIPLIERS - ACTIVE - CHIP

1, 2 Vdd1, Vdd2 Supply voltage 5V ± 0.5V.

Pin is AC coupled and matched to

3 RFOUT
50 Ohms from 32 - 46 GHz.

4, 5 GND Die bottom must be connected to RF ground.

Pin is AC coupled and matched to

6 RFIN
50 Ohms from 16 - 23 GHz.

Assembly Diagram

For price, delivery,

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact Hittite and to place
Microwave orders: Analog Devices, Inc.,
Corporation:
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
2 - 60 20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343
781-329-4700Fax: 978-250-3373
• Order
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Order On-line at www.hittite.com
 HMC579
v01.0608
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 32 - 46 GHz OUTPUT

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs

The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film
0.102mm (0.004”) Thick GaAs MMIC 2
substrates are recommended for bringing RF to and from the chip (Figure 1). If Wire 3 mil Ribbon Bond
0.076mm
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should

FREQUENCY MULTIPLIERS - ACTIVE - CHIP

(0.003”)
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is to attach the 0.102mm
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).
RF Ground Plane
Microstrip substrates should be brought as close to the die as possible in order
to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3
mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12
mils) is recommended to minimize inductance on RF, LO & IF ports. 0.127mm (0.005”) Thick Alumina
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer Thin Film Substrate
capacitor (mounted eutectically or by conductive epoxy) placed no further than Figure 1.
0.762mm (30 Mils) from the chip is recommended.

Handling Precautions 0.102mm (0.004”) Thick GaAs MMIC

Follow these precautions to avoid permanent damage.
Ribbon Bond
Storage: All bare die are placed in either Waffle or Gel based ESD protective
0.076mm
containers, and then sealed in an ESD protective bag for shipment. Once the (0.003”)
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems. RF Ground Plane

Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the 0.150mm (0.005”) Thick
sealed ESD protective bag has been opened, all die should be stored in a dry Moly Tab
nitrogen environment. 0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD Figure 2.
strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.

Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The
mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature
of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the
chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required
for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.

Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).

For price, delivery,

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders, please contact Hittite and to place
Microwave orders: Analog Devices, Inc.,
Corporation:
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone: 978-250-3343
781-329-4700Fax: 978-250-3373
• Order
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. online at www.analog.com 2 - 61
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Order On-line at www.hittite.com