MOT MOT4N65A/MOT4N65F

N-CHANNEL MOSFET

„ PRODUCT CHARACTERISTICS Symbol

2.Drain
VDSS 650V
RDS(on)max(@VGS =10 V) 2.4Ω
Qg@type 20nC
ID 4A 1.Gate

„ APPLICATIONS 3.Source
• Electronic ballast
• Electronic transformer
• Switch mode power supply

„ FEATURES MO
T4N MO

* RDS(ON) = 2.4Ω @VGS = 10 V

65A T4
N6
5F

* Low on-resistance
* High input resistance
* Rohs compliant
TO-220 TO-220F

„ ORDER INFORMATION
Order codes
Package Packing
Halogen-Free Halogen
N/A MOT4N65F TO-220F 50 pieces/Tube

N/A MOT4N65A TO-220 50 pieces/Tube

„ ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 650 V
Gate-Source Voltage VGSS ±30 V
Avalanche Current (Note 2) IAR 4.0 A
Continuous ID 4.0 A
Drain Current
Pulsed (Note 2) IDM 16 A
Single Pulsed (Note 3) EAS 260 mJ
Avalanche Energy
Repetitive (Note 2) EAR 10.6 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
TO-220 106
Power Dissipation PD W
TO-220F 36
Junction Temperature TJ +150 °С
Operating Temperature TOPR -55 ~ +150 °С
Storage Temperature TSTG -55 ~ +150 °С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C

Rev. 1.0 -1- March 2020

MOT MOT4N65A/MOT4N65F
N-CHANNEL MOSFET

„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250μA 650 V
Drain-Source Leakage Current IDSS VDS = 650 V, VGS = 0 V 10 μA
Forward VGS = 30 V, VDS = 0 V 100 nA
Gate-Source Leakage Current IGSS
Reverse VGS = -30 V, VDS = 0 V -100 nA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.6 V/°С
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2A 2.0 2.4 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 520 670 pF
VDS = 25 V, VGS = 0V,
Output Capacitance COSS 70 90 pF
f = 1MHz
Reverse Transfer Capacitance CRSS 8 11 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) 13 35 ns
Turn-On Rise Time tR VDD = 325V, ID = 4.0A, 45 100 ns
Turn-Off Delay Time tD(OFF) RG = 25Ω (Note 1, 2) 25 60 ns
Turn-Off Fall Time tF 35 80 ns
Total Gate Charge QG 15 20 nC
VDS= 520V,ID = 4A
Gate-Source Charge QGS 3.4 nC
VGS= 10V (Note 1, 2)
Gate-Drain Charge QGD 7.1 nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.0A 1.4 V
Maximum Continuous Drain-Source Diode
IS 4.4 A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM 17.6 A
Forward Current
Reverse Recovery Time trr VGS = 0V, IS = 4.0A, 250 ns
Reverse Recovery Charge QRR dIF/dt = 100 A/μs (Note 1) 1.5 μC
Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature

Rev. 1.0 -2- March 2020

MOT MOT4N65A/MOT4N65F
N-CHANNEL MOSFET

„ TEST CIRCUITS AND WAVEFORMS

D.U.T. +

VDS

- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * ISD controlled by pulse period
VGS as D.U.T. * D.U.T.-Device Under Test

Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)
di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

Rev. 1.0 -3- March 2020

MOT MOT4N65A/MOT4N65F
N-CHANNEL MOSFET

„ TEST CIRCUITS AND WAVEFORMS(Cont.)

RL
VDS

VGS VDD
RG

D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%

Switching Test Circuit Switching Waveforms

Gate Charge Test Circuit Gate Charge Waveform

BVDSS
IAS

ID(t)
VDS(t)
VDD

tp Time

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

Rev. 1.0 -4- March 2020

w
MOT MOT4N65A/MOT4N65F
N-CHANNEL MOSFET

 TY PICAL CHARACTERISTICS

Breakdown Voltage Variation vs. On-Resistance Junction Temperature

Temperature
1.2 3.0
Drain-Source Breakdown Voltage,

2.5

Drain-Source On-Resistance,
1.1

RDS(ON) (Normalized) (Ω)

BVDSS (Normalized) (V)

2.0

1.0 1.5

1.0
0.9 Note: Note:
1. VGS=0V 0.5 1. VGS=10V
2. ID=250µA 2. ID=4A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200

Junction Temperature, TJ (°С) Junction Temperature, TJ (°С)

On-State Characteristics Transfer Characteristics

VGS
10 Top: 10V 10
9V
8V
7V
6V
5.5V 25°С
5 V Bottorm:5.0V

1 5.0V
150°С
1

0.1
Notes:
Notes:
1. 250µs Pulse Test
1. VDS=50V
2. TC=25°С 2. 250µs Pulse Test
0.1
0.1 1 10 2 4 6 8 10
Drain-to-Source Voltage, VDS (V) Gate-Source Voltage, VGS (V)

Rev. 1.0 -5- March 2020

MOT MOT4N65A/MOT4N65F
N-CHANNEL MOSFET

 TY PICAL CHARACTERISTICS(Cont.)

Capacitance Characteristics Gate Charge Characteristics

(Non-Repetitive)
12
1200 Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd Crss=Cgd
10
1000 VDS=300V
Ciss
8 VDS=480V
800
Notes: VDS=120V
Coss 1. VGS=0V 6
600
2. f = 1MHz
400 4

200 2
Crss
Note: ID=4A
0 0
0.1 1 10 0 5 10 15 20 25

Drain-SourceVoltage, VDS (V) Total Gate Charge, QG (nC)

Thermal Response, θJC (t)

PD (w)

Rev. 1.0 -6- March 2020

MOT MOT4N65A/MOT4N65F
N-CHANNEL MOSFET

n TO-220F-3L PACKAGE OUTLINE DIMENSIONS

Rev. 1.0 -7- March 2020

MOT MOT4N65A/MOT4N65F
N-CHANNEL MOSFET

n TO-220-3L PACKAGE OUTLINE DIMENSIONS

Rev. 1.0 -8- March 2020