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    Fmmta55, Fmmta56 Zetex

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    ari candra
    This document provides specifications for SOT23 PNP silicon planar medium power transistors. It lists maximum ratings, electrical characteristics, and part marking details for the FMMTA55 and FMMTA56 transistors.

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    © All Rights Reserved
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    Fmmta55, Fmmta56 Zetex

    Uploaded by

    ari candra
    8 views2 pages
    This document provides specifications for SOT23 PNP silicon planar medium power transistors. It lists maximum ratings, electrical characteristics, and part marking details for the FMMTA55 and FMMTA56 transistors.

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    Precipitator

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    fmmta55,_fmmta56_zetex

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    This document provides specifications for SOT23 PNP silicon planar medium power transistors. It lists maximum ratings, electrical characteristics, and part marking details for the FMMTA55 and FMMTA56 transistors.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    8 views2 pages

    Fmmta55, Fmmta56 Zetex

    Uploaded by

    ari candra
    This document provides specifications for SOT23 PNP silicon planar medium power transistors. It lists maximum ratings, electrical characteristics, and part marking details for the FMMTA55 and FMMTA56 transistors.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    SOT23 PNP SILICON PLANAR FMMTA55

    MEDIUM POWER TRANSISTORS FMMTA56


    ISSUE 3 – JANUARY 1996 ✪
    FEATURES

    * Gain of 50 at IC=100mA E
    C

    PARTMARKING DETAIL - FMMTA55 - 2H


    FMMTA56 - 2G B
    FMMTA55R - NB
    FMMTA56R - MB
    SOT23
    ABSOLUTE MAXIMUM RATINGS.
    PARAMETER SYMBOL FMMTA55 FMMTA56 UNIT
    Collector-Base Voltage VCBO -60 -80 V
    Collector-Emitter Voltage VCEO -60 -80 V
    Emitter-Base Voltage VEBO -4 V
    Continuous Collector Current IC -500 mA
    Power Dissipation at Tamb=25°C Ptot 330 mW
    Operating and Storage Temperature Tj:Tstg -55 to +150 °C
    Range

    ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).


    FMMTA55 FMMTA56
    PARAMETER SYMBOL MIN. MAX. MIN. MAX. UNIT CONDITIONS.
    Collector-Emitter V(BR)CEO -60 -80 V IC=-1mA, IB=0*
    Breakdown Voltage
    Emitter-Base V(BR)EBO -4 -4 V IE=-100µ A, IC=0
    Breakdown Voltage
    Collector-Emitter ICES -0.1 -0.1 µA VCE=-60V
    Cut-Off Current
    Collector-Base ICBO -0.1 µA VCB=-80V, IE=0
    Cut-Off Current -0.1 VCB=-60V, IE=0
    Static Forward hFE 50 50 IC=-10mA, VCE=1V*
    Current Transfer Ratio 50 50 IC=-100mA, VCE=1V*
    Collector-Emitter VCE(sat) -0.25 -0.25 V IC=-100mA,
    Saturation Voltage IB=-10mA*
    Base-Emitter VBE(on) -1.2 -1.2 V IC=-100mA, VCE=-1V*
    Turn-On Voltage
    Transition fT 100 100 MHz IC=-10mA, VCE=-2V
    Frequency f=100MHz
    *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

    3 - 177
    www.s-manuals.com

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