MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54523P/FP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

DESCRIPTION PIN CONFIGURATION

M54523P and M54523FP are seven-circuit Darlington tran-
sistor arrays with clamping diodes. The circuits are made of
IN1→ 1 16 →O1
NPN transistors. Both the semiconductor integrated circuits
IN2→ 2 15 →O2
perform high-current driving with extremely low input-current
supply. IN3→ 3 14 →O3

INPUT IN4→ 4 13 →O4 OUTPUT

FEATURES IN5→ 5 12 →O5
● High breakdown voltage (BV CEO ≥ 50V)
IN6→ 6 11 →O6
● High-current driving (IC(max) = 500mA)
IN7→ 7 10 →O7
● With clamping diodes
GND 8 9 →COM COMMON
● Driving available with PMOS IC ouput
● Wide operating temperature range (Ta = –20 to +75°C)
16P4(P)
Package type 16P2N-A(FP)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and interfaces between standard
CIRCUIT DIAGRAM
MOS-bipolar logic IC
COM
FUNCTION OUTPUT
The M54523P and M54523FP each have seven circuits con- 2.7k
INPUT
sisting of NPN Darlington transistors. These ICs have resis-
tance of 2.7kΩ between input transistor bases and input
pins. A spike-killer clamping diode is provided between each 5k
output pin (collector) and COM pin. The output transistor
emitters are all connected to the GND pin (pin 8). The col- 3k
GND
lector current is 500mA maximum. Collector-emitter supply
voltage is 50V maximum.The M54523FP is enclosed in a The seven circuits share the COM and GND

molded small flat package, enabling space-saving design. The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit : Ω

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75 °C)

Symbol Parameter Conditions Ratings Unit

VCEO Collector-emitter voltage Output, H –0.5 ~ +50 V
IC Collector current Current per circuit output, L 500 mA
VI Input voltage –0.5 ~ +30 V
IF Clamping diode forward current 500 mA
VR Clamping diode reverse voltage 50 V
Pd Power dissipation Ta = 25°C, when mounted on board 1.47(P)/1.00(FP) W
Topr Operating temperature –20 ~ +75 °C
Tstg Storage temperature –55 ~ +125 °C

Jan.2000
 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54523P/FP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)

Limits
Symbol Parameter Unit
min typ max
VO Output voltage 0 — 50 V
Collector current Duty Cycle
(Current per 1 cir- P : no more than 8% 0 — 400
FP : no more than 8%
cuit when 7 circuits mA
IC are coming on si- Duty Cycle
P : no more than 30% 0 — 200
multaneously) FP : no more than 25%
IC ≤ 400mA 3.85 — 25
VIH “H” input voltage V
IC ≤ 200mA 3.4 — 25
VIL “L” input voltage 0 — 0.6 V

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)

Limits
Symbol Parameter Test conditions Unit
min typ* max
V (BR) CEO Collector-emitter breakdown voltage ICEO = 100µA 50 — — V
VI = 3.85V, I C = 400mA — 1.2 2.4
VCE(sat) Collector-emitter saturation voltage V
VI = 3.4V, IC = 200mA — 1.0 1.6
VI = 3.85V — 1.2 1.8
II Input current mA
VI = 25V — 9.5 18
VF Clamping diode forward volltage IF = 400mA — 1.4 2.4 V
IR Clamping diode reverse current VR = 50V — — 100 µA
h FE DC amplification factor VCE = 4V, IC = 350mA, Ta = 25°C 1000 2500 — —
* : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained un-
der any conditions.

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C)

Limits
Symbol Parameter Test conditions Unit
min typ max
ton Turn-on time — 10 — ns
CL = 15pF (note 1)
toff Turn-off time — 120 — ns

NOTE 1 TEST CIRCUIT TIMING DIAGRAM

INPUT
INPUT Vo
50% 50%

Measured device RL
OPEN
PG OUTPUT
OUTPUT 50% 50%
50Ω CL

ton toff

(1)Pulse generator (PG) characteristics : PRR=1kHz,

tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω
VP = 3.85VP-P
(2)Input-output conditions : RL = 25Ω, Vo = 10V
(3)Electrostatic capacity CL includes floating capacitance
at connections and input capacitance at probes

Jan.2000
 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54523P/FP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

TYPICAL CHARACTERISTICS

Output Saturation Voltage

Thermal Derating Factor Characteristics
Collector Current Characteristics
2.0 500
Power dissipation Pd (W)

400

Collector current Ic (mA)

M54523P
1.5

300
M54523FP
1.0
200
VI = 3.85V
0.5 Ta = 75°C
100 Ta = 25°C
Ta = –20°C

0 0
0 25 50 75 100 0 0.5 1.0 1.5 2.0

Ambient temperature Ta (°C) Output saturation voltage VCE(sat) (V)

Duty Cycle-Collector Characteristics Duty Cycle-Collector Characteristics

(M54523P) (M54523P)
500 1 500

400 400
Collector current Ic (mA)

Collector current Ic (mA)

1
2
300 300
3 2
4
200 5 200 3
•The collector current values 6 4
represent the current per circuit. 7 •The collector current values 5
100 •Repeated frequencyy ≥ 10Hz 100 represent the current per circuit. 6
•The value the circle represents the •Repeated frequency ≥ 10Hz 7
•The value the circle represents the
value of the simultaneously-operated circuit.
value of the simultaneously-operated circuit.
•Ta = 25°C •Ta = 75°C
0 0
0 20 40 60 80 100 0 20 40 60 80 100

Duty cycle (%) Duty cycle (%)

Duty Cycle-Collector Characteristics Duty Cycle-Collector Characteristics

(M54523FP) (M54523FP)
500 500

400 1 400
Collector current Ic (mA)

Collector current Ic (mA)

300 300 1
2

200 3 200
4 2
•The collector current values 5 3
represent the current per circuit. 6 •The collector current values 4
100 7 100 5
•Repeated frequency ≥ 10Hz represent the current per circuit.
•The value the circle represents the •Repeated frequency ≥ 10Hz 76
value of the simultaneously-operated circuit. •The value the circle represents the
•Ta = 25°C value of the simultaneously-operated circuit. •Ta = 75°C
0 0
0 20 40 60 80 100 0 20 40 60 80 100

Duty cycle (%) Duty cycle (%)

Jan.2000
 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54523P/FP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

Input Characteristics DC Amplification Factor

Collector Current Characteristics
16 104
7
5 VCE = 4V

DC amplification factor hFE

Ta = 75°C
12
Input Current II (mA)

3 Ta = 25°C
Ta = 75°C Ta = –20°C
Ta = 25°C
Ta = –20°C
8 103
7
5

4 3

0 102 1
0 8 16 24 32 10 3 5 7 102 3 5 7 103

Input voltage VI (V) Collector current IcC (mA)

Grounded Emitter Transfer Characteristics Clamping Diode Characteristics

500 500

Ta = 75°C
Forward bias current IF (mA)

400 400 Ta = 25°C

Collector current Ic (mA)

Ta = –20°C
VCE = 4V
Ta = 75°C
300 Ta = 25°C 300
Ta = –20°C

200 200

100 100

0 0
0 1 2 3 4 5 0 0.5 1.0 1.5 2.0

Input voltage VI (V) Forward bias voltage VF (V)

Jan.2000