ITAxxB3

Bidirectional Transil™ array for data line protection

Features
■ High surge capability Transil array:
IPP = 40 A (8/20 µs)
■ Peak pulse power: 300 W (8/20 µs)
■ Separated Input - Output SO-20
■ Up to 9 bidirectional Transil functions
■ Low clamping factor (VCL/VBR) at high current Description
level
Transil diode arrays provide high overvoltage
■ Low leakage current
protection by clamping action. Their
■ ESD protection up to 15 kV instantaneous response to transient overvoltages
makes them particularly suited to protect voltage
Complies with the following standards sensitive devices such as MOS technology and
■ IEC 61000-4-2 level 4 low voltage supplied IC’s.
– 15 kV (air discharge) The ITA series combines high surge capability
– 8 kV (contact discharge) against energetic pulses with high voltage
■ MIL STD 883G- Method 3015-7: class 3B performance against ESD.
– 25 kV (human body model) The separated input/output configuration of the
device ensures improved protection against very
fast transient overvoltage like ESD by elimination
Applications
of the spikes induced by parasitic inductances
Differential data transmission lines protection, created by external wiring.
such as :
Figure 1. Functional diagram
■ RS-232
■ RS-423 GND 20 GND
1
■ RS-422
INPUT 2 19 OUTPUT
■ RS-485
INPUT 3 18 OUTPUT

INPUT 4 17 OUTPUT

INPUT 5 16 OUTPUT

INPUT 6 15 OUTPUT

INPUT 7 14 OUTPUT

INPUT 8 13 OUTPUT

INPUT 9 12 OUTPUT

GND 10 11 GND
TM: Transil is a trademark of STMicroelectronics

November 2007 Rev 2 1/8

www.st.com 8
Characteristics ITAxxB3

1 Characteristics

Table 1. Absolute ratings (Tamb = 25 °C)

Symbol Parameter Value Unit

PPP Peak pulse power (8/20 µs)(1) Tj initial = Tamb 300 W

IPP (1)
Peak pulse current (8/20 µs) Tj initial = Tamb 40 A
2 2 (1)
I t Wire I t value 0.6 A2s
Tj Maximum operating junction temperature 125 °C
Tstg Storage temperature range -55 to +150 °C
TL Maximum lead temperature for soldering during 10 s 260 °C
1. For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit
caused by the wire melting.

Table 2. Electrical characteristics (Tamb = 25 °C)

Symbol Parameter
I
IPP
VRM Stand-off voltage
VBR Breakdown voltage
VCL Clamping voltage
IRM
IRM Leakage current VRM VCL
V
VBR
IPP Peak pulse current
αT Voltage temperature coefficient
VF Forward voltage drop
C Capacitance

VBR @ IR IRM @ VRM VCL @ IPP VCL @ IPP αT C

min. max. 8/20 µs max. 8/20 µs max. max.

Order code
(1) (1) (1) (2)

V mA µA V V A V A 10-4/°C pF
ITA6V5B3 6.5 1 10 5 9.5 10 121 25 4 1100
ITA18B3 18 1 4 15 21 10 26 25 9 500
ITA25B3 25 1 4 24 31 10 36 25 12 420
1. Between I/O pin and ground.
2. Between two input pins at 0 V Bias, F = 1 MHz.

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ITAxxB3 Characteristics

Figure 2. Pulse waveform Figure 3. Typical peak pulse power versus

exponential pulse duration
PPP(W)
%IPP 1E+04
ITA25B3 Tj initial=25°C
8 µs ITA18B3
100

1E+03

Pulse waveform 8/20 µs ITA6V5B3

50
1E+02

0 t tP(ms) expo
1E+01
20 µs
1E-03 1E-02 1E-01 1E+00 1E+01 1E+02

Figure 4. Clamping voltage versus peak Figure 5. Peak current IDC inducing open
pulse current (exponential circuit of the wire for one
waveform 8/20 µs) input/output versus pulse duration
(typical values)
VCL(V) IDC(A)
1E+03 1E+03
%IPP
Tj initial=25°C Exponential waveform
100

50

0 t
1E+02 tr tp 1E+02
ITA25B3
ITA18B3

1E+01 1E+01

ITA6V5B3

1E+00
IPP(A) 1E+00 tP(ms)
1E-01 1E+00 1E+01 1E+02 1E-02 1E-01 1E+00 1E+01

Figure 6. Junction capacitance versus Figure 7. Relative variation of leakage

reverse applied voltage for one current versus junction
input/output (typical values) temperature
C(pF) IR(Tj)
1E+03 IR(Tj=25°C)
ITA6V5B3
Tj=25°C 5E+3
F=1MHz
VR=VRM
1E+3

1E+2
ITA18B3

1E+1
ITA25B3

1E+0

VR(V) Tj(°C)
1E+02
1E-1
1E+00 1E+01 1E+02 0 25 50 75 100 125 150

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Application information ITAxxB3

2 Application information

This monolithic Transil Array is based on 610 unidirectional Transils with a common cathode
and can be configurated to offer up to 9 bidirectional functions. This imposes a maximum
differential voltage between 2 input pins (see Table 3).

Table 3. Maximum differential voltages

Order code Maximum differential voltage between two input pins at 25°C

ITA6V5B3 ± 3.5 v
ITA18B3 ± 9.0 v
ITA25B3 ± 12.5 v

Figure 8. RS-232 junction (typical application)

TX

RX

RTS

CTS

DTR

DSR

CARRIER DET.

AUX

GND

2.1 Design advantage of ITAxxB3 used with 4-point structure

The ITAxxxB3 has been designed with a 4-point structure Figure 9. The 4 point structure
(separated Input/output) to efficiently protect against
disturbances with very high di/dt rates, such as ESD. Chip

The purpose of this 4-point structure is to eliminate the

overvoltage introduced by the parasitic inductances of the Input 1 Output 1

wiring (Ldi/dt). di/dt BE

U TO ED
T
I CE EC
Efficient protection depends not only on the component GND GND V T
DE RO
P
itself, but also on the circuit layout. The drawing given in
figure 9 shows the layout to be used in order to take
advantage of the 4-point structure of the ITAxxxB3.
With this layout, each line to be protected passes through
the protection device.
In this way, it realizes an interface between the data line
and the circuit to be protected, guaranteeing an isolation
between its inputs and outputs.

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ITAxxB3 Ordering information scheme

3 Ordering information scheme

Figure 10. Ordering information scheme

ITA 25 B 3 RL

Integrated Transil Array

Breakdown Voltage (min)
25 = 25 Volt
Type of lines protected
B = Bidirectional
Package
3 = SO-20
Packaging
RL = Tape and reel
Blank = Tube

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Package information ITAxxB3

4 Package information

● Epoxy meets UL94, V0

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.

Table 4. SO-20 dimensions

Dimensions

Ref. Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

D hx45° A 2.35 2.65 0.092 0.104
A
A1 0.10 0.30 0.004 0.008
K
B e A1 L C B 0.33 0.51 0.013 0.020
C 0.23 0.32 0.009 0.013
D 12.6 13.0 0.484 0.512
E 7.40 7.60 0.291 0.299
E H
e 1.27 0.050
H 10.0 10.65 0.394 0.419
h 0.25 0.75 0.010 0.029
L 0.40 1.27 0.016 0.050
K 8° (max)

Figure 11. SO-20 footprint (dimensions in mm)

8.5 11.2

1.27 0.6

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ITAxxB3 Ordering Information

5 Ordering Information

Table 5. Ordering information

Order code Marking Package Weight Base qty Delivery mode

ITA6V5B3 ITA6V5B3 1000 Tube

ITA18B3 ITA18B3 1000 Tube
ITA18B3RL ITA18B3 SO-20 0.55 g 1000 Tape and reel
ITA25B3 ITA25B3 1000 Tube
ITA25B3RL ITA25B3 1000 Tape and reel

6 Revision history

Table 6. Document revision history

Date Revision Changes

13-Dec-2004 1 Initial release.

Reformatted to current standards. Updated leakage current values in
07-Nov-2007 2
Table 2 Updated pulse waveform parameters in Figure 2.

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 ITAxxB3

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