Q.

The cut-off wavelength (in micro m) of light that can be used for
intrinsic excitation of a semiconductor material of bandgap
Eg = 1.1eV is _________. (GATE - 14)(Set 4)
Q. At T = 300 K, the band gap and the intrinsic carrier concentration of GaAs are 1.42eV and
106cm–3, respectively. In order to generate electron hole pairs in GaAs, which one of the
wavelength (c) ranges of incident radiation, is most suitable? (Given that: Planck’s constant
is 6.6210–34 J-s, velocity of light is 31010cm/s and charge of electron is
1.610–19 C)
(GATE - 14)(Set 4)
(a) 0.42m < c < 0.87mm
(b) 0.87 m < c < 1.42 mm
(c) 1.42 m < c< 1.62 mm
(d) 1.62 m < c< 6.62 mm
Q. An N-type semiconductor having uniform doping is biased as shown in
the figure.

If EC is the lowest energy level of the conduction band, EV is the

highest energy level of the valance band and EF is the Fermi level,
which one of the following represents the energy band diagram for the
biased N-type semiconductor? (GATE - 14)(Set4)
Q. Silicon is doped with boron to a concentration of 41017 atoms/cm3.
Assume the intrinsic carrier concentration of silicon to be 1.51010/cm3
and the value of KT/q to be 25mV at 300o K. Compared to undoped
silicon, the fermi level of doped silicon.

(GATE – 07)
(a) Goes down by 0.13 eV
(b) Goes up by 0.13 eV
(c) Goes down by 0.427 eV
(d) Goes up by 0.427 eV
Q. The band diagram of a p-type semiconductor with a band-gap of 1 eV is shown, using this
semiconductor, a MOS capacitor having VTH of -0.16 V, of 100 nF/cm2 and a metal work
function of 3.87 eV is fabricated. There is no charge within the oxide. If the voltage across
the capacitor is VTH, the magnitude of depletion charge per unit area (in C/cm2) is
(GATE – 20)

Vacuum level
(a) 1.4110-8 4 eV

(b) 1.70  10-8 Ec

0.5 eV
(c) 0.52  10-8 Ef

(d) 0.93  10-8 0.2

EFe

eV Ev
Q. For an n-channel silicon MOSFET with 10nm gate oxide thickness, the substrate
sensitivity (VT/|VBS|) is found to be 50m V/V at a substrate voltage |VBS| = 2V, where VT
is the threshold voltage of the MOSFET. Assume that, |VBS| > > 2B, where qB is the
separation between the Fermi energy level EF and the intrinsic level Ei in the bulk.
Parameters given are
Electron charge (q) = 1.610-19 C
Vaccum permittivity (0) = 8.8510-12 F/m
Relative permittivity of silicon (si) = 12
Relative Permittivity of oxide (ox) = 4
The doping concentration of the substrate is (GATE – 21)
(a) 4.37  1015 cm-3 (b) 7.37  1015 cm-3
(c) 2.37  1015 cm-3 (d) 9.37  1015 cm-3
Q. Consider a long-channel MOSFET with a channel length 1 m and width 10 mm. The
device parameters are acceptor concentration NA = 51016 cm-3, electron mobility n =
800 cm2/V-s, oxide capacitance/area Cox = 3.4510-7F/cm2, threshold
voltage VT = 0.7 V. The drain saturation current (IDsat) for a gate voltage of 5 V is ____
mA (rounded off to two decimal places). [0 = 8.85410-14F/cm, si = 11.9]
(GATE-19)
Q. The energy band diagram and the electron density profile n(x) in a
semiconductor are shown in figures. Assume that n(x) = 1015

𝑞 𝑥
𝑐𝑚−3
𝑒 𝐾𝑇 , with  = 0.1 V/cm and x expressed in cm. Given KT/q =

0.026V, Dn = 36cm2 s-1, and D/ = KT/q . The electron current density
(in A/cm2) at x = 0 is (GATE-15) (Set-2)

(a) –4.410–2
(b) –2.210–2
(c) 0
(d) 2.210–2
Q. A dc voltage of 10V is applied across an n-type silicon bar having a
rectangular cross-section and a length of 1cm as shown in figure. The
donor doping concentration ND and the mobility of electrons n are
1016cm–3 and 1000cm2 V–1s–1 respectively. The average time (in s)
taken by the electrons to move from one end of the bar to other end is
_______. ( (GATE-15)
(Set-2)
Q. The figure below shows the doping distribution in a P-type
semiconductor in log scale.

The magnitude of the electric field (in kV/cm) in the semiconductor due
to non uniform doping is ––––––.
(GATE-16)
(Set-1)
Q. Consider a silicon sample at T = 300 K, with a uniform donor density Nd =
51016 cm-3 illuminated uniformly such that the optical generation rate is
Gopt = 1.51020cm–3s–1 throughout the sample. The incident radiation is
turned off at t = 0. Assume low-level injection to be valid and ignore
surface effects. The carrier lifetimes are po = 0.1ms and po = 0.5ms.

The hole concentration at t = 0 and the hole concentration at t = 0.3

ms, respectively, are (GATE-16) (Set-1)
(a) 1.51013 cm-3 and 7.471011 cm-3
(b) 1.51013 cm-3 and 8.231011 cm-3
(c) 7.51013 cm-3 and 3.731011 cm-3
(d) 7.51013 cm-3 and 4.121011 cm-3
Q. As shown a uniformly doped silicon (Si) bar of length L = 0.1m with a
donor concentration ND = 1016 cm-3 is illuminated at x = 0 such that electron
𝑥
and hole pairs are generated at the rate of GL = GLO 1 − , 0  x  L, where
𝐿

GLO = 1017 cm-3 s-1, hole lifetime is 10-4 s, electronic charge q = 1.610-19 C,
hole diffusion coefficient DP = 100cm2/s and low level injection condition
prevails. Assuming a linearly decaying steady sate excess hole concentration
that goes to 0 at x = L, the magnitude of the diffusion current density at x =
L/2, in A/cm2 is __________. (GATE – 17) (Set – 1)
Q. The dependence of drift velocity of electrons on electric field in a
semiconductor is shown below. The semiconductor has a uniform
electron concentration of n = 11016cm–3 and electronic charge q =
1.610–19 C. If a bias of 5V is applied across a 1mm region of this
semiconductor, the resulting current density in this region, in kA/cm2, is
________. (GATE-17)
(Set 1)
Q. The quantum efficiency () and responsivity (R) at a wavelength  (in
m) in a p-i-n photodetector are related by

(GATE – 19)


(a) R =
1.24

1.24
(b) 𝑅 =



(c) 𝑅 =
1.24

1.24
(d) 𝑅 =
