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 FDB2532_F085 N-Channel PowerTrench® MOSFET
September 2010
FDB2532_F085
N-Channel PowerTrench® MOSFET
150V, 79A, 16mΩ
Features Applications
• r DS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS
• Qg(tot) = 82nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
• Low Miller Charge
• Primary Switch for 24V and 48V Systems
• Low QRR Body Diode
• High Voltage Synchronous Rectifier
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101 • Direct Injection / Diesel Injection Systems

• RoHS Compliant • 42V Automotive Load Control

Formerly developmental type 82884
• Electronic Valve Train Systems

DRAIN D
(FLANGE)
GATE

SOURCE
G
TO-263AB
FDB SERIES
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 150 V
VGS Gate to Source Voltage ±20 V
Drain Current
Continuous (TC = 25oC, VGS = 10V) 79 A
ID Continuous (TC = 100oC, VGS = 10V) 56 A
Continuous (Tamb = 25oC, VGS = 10V, R θJA = 43oC/W) 8 A
Pulsed Figure 4 A
EAS Single Pulse Avalanche Energy (Note 1) 400 mJ
Power dissipation 310 W
PD
Derate above 25oC 2.07 W/oC
TJ, TSTG o
Operating and Storage Temperature -55 to 175 C

Thermal Characteristics
o
RθJC Thermal Resistance Junction to Case TO-263 0.48 C/W
RθJA 2 o
Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.

©2010 Fairchild Semiconductor Corporation FDB2532_F085 Rev. A

 FDB2532_F085 N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDB2532 FDB2532_F085 TO-263AB 330mm 24mm 800 units

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 150 - - V
VDS = 120V - - 1
IDSS Zero Gate Voltage Drain Current μA
VGS = 0V TC = 150oC - - 250
IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics
VGS(TH) Gate to Source Threshold Voltage V GS = VDS, ID = 250μA 2 - 4 V
ID = 33A, VGS = 10V - 0.014 0.016
ID = 16A, VGS = 6V, - 0.016 0.024
rDS(ON) Drain to Source On Resistance Ω
ID = 33A, VGS = 10V,
- 0.040 0.048
TC = 175oC

Dynamic Characteristics
CISS Input Capacitance - 5870 - pF
VDS = 25V, VGS = 0V,
COSS Output Capacitance - 615 - pF
f = 1MHz
CRSS Reverse Transfer Capacitance - 135 - pF
Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V - 82 107 nC
Qg(TH) Threshold Gate Charge VGS = 0V to 2V V DD = 75V - 11 14 nC
Qgs Gate to Source Gate Charge ID = 33A - 23 - nC
Qgs2 Gate Charge Threshold to Plateau Ig = 1.0mA - 13 - nC
Qgd Gate to Drain “Miller” Charge - 19 - nC

Resistive Switching Characteristics (VGS = 10V)

tON Turn-On Time - - 69 ns
td(ON) Turn-On Delay Time - 16 - ns
tr Rise Time VDD = 75V, ID = 33A - 30 - ns
td(OFF) Turn-Off Delay Time VGS = 10V, RGS = 3.6Ω - 39 - ns
tf Fall Time - 17 - ns
tOFF Turn-Off Time - - 84 ns

Drain-Source Diode Characteristics

ISD = 33A - - 1.25 V
VSD Source to Drain Diode Voltage
ISD = 16A - - 1.0 V
trr Reverse Recovery Time ISD = 33A, dISD/dt= 100A/μs - - 105 ns
QRR Reverse Recovery Charge ISD = 33A, dISD/dt= 100A/μs - - 327 nC

Notes:
1: Starting TJ = 25°C, L = 0.5 mH, IAS = 40A.
2: Pulse Width = 100s

©2010 Fairchild Semiconductor Corporation FDB2532_F085 Rev. A

 FDB2532_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics TA = 25°C unless otherwise noted

1.2 125
VGS = 10V
1.0
POWER DISSIPATION MULTIPLIER

100

ID, DRAIN CURRENT (A)

0.8
75
0.6

50
0.4

0.2 25

0
0
0 25 50 75 100 125 150 175
25 50 75 100 125 150 175
TC , CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs Figure 2. Maximum Continuous Drain Current vs

Ambient Temperature Case Temperature

2.0
DUTY CYCLE - DESCENDING ORDER
1.0 0.5
0.2
0.1
0.05
THERMAL IMPEDANCE

0.02
ZθJC, NORMALIZED

0.01

PDM
0.1

t1
t2
NOTES:
SINGLE PULSE DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x Z θJC x RθJC + TC
0.01
10 -5 10-4 10 -3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION (s)

Figure 3. Normalized Maximum Transient Thermal Impedance

2000
TC = 25 oC
FOR TEMPERATURES
1000 TRANSCONDUCTANCE
MAY LIMIT CURRENT ABOVE 25oC DERATE PEAK
IN THIS REGION CURRENT AS FOLLOWS:
IDM, PEAK CURRENT (A)

I = I25 175 - TC
150
VGS = 10V

100

50

10-5 10-4 10-3 10-2 10-1 100 101

t, PULSE WIDTH (s)

Figure 4. Peak Current Capability

©2010 Fairchild Semiconductor Corporation FDB2532_F085 Rev. A

 FDB2532_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics TA = 25°C unless otherwise noted

1000 200
10μs STARTING TJ = 25oC
100

IAS, AVALANCHE CURRENT (A)

100μs
100
ID, DRAIN CURRENT (A)

OPERATION IN THIS 1ms STARTING TJ = 150oC

10
AREA MAY BE
LIMITED BY rDS(ON) 10
10ms

DC
1
If R = 0
SINGLE PULSE tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
TJ = MAX RATED If R ≠ 0
TC = 25oC tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
0.1 1

1 10 100 300 0.001 0.01 0.1 1

VDS, DRAIN TO SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (ms)

Figure 5. Forward Bias Safe Operating Area NOTE: Refer to Fairchild Application Notes AN7515 and AN7517
Figure 6. Unclamped Inductive Switching
Capability

180 180
PULSE DURATION = 80μs VGS = 10V VGS = 7V
DUTY CYCLE = 0.5% MAX 150
150
VDD = 15V
VGS = 6V
ID , DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

120 120

TJ = 175oC 90
90
TC = 25oC
60 VGS = 5V
60
TJ = 25oC TJ = -55oC
30
PULSE DURATION = 80μs
30
DUTY CYCLE = 0.5% MAX
0
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0.0 1.0 2.0 3.0 4.0 5.0 6.0
VGS , GATE TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

18 3.0
PULSE DURATION = 80μs PULSE DURATION = 80μs
DRAIN TO SOURCE ON RESISTANCE (m Ω)

DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX

NORMALIZED DRAIN TO SOURCE

17 2.5
VGS = 6V
ON RESISTANCE

16 2.0

15 1.5

VGS = 10V

14 1.0

VGS = 10V, ID =33A

13 0.5
0 20 40 60 80 -80 -40 0 40 80 120 160 200
ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (oC)

Figure 9. Drain to Source On Resistance vs Drain Figure 10. Normalized Drain to Source On
Current Resistance vs Junction Temperature

©2010 Fairchild Semiconductor Corporation FDB2532_F085 Rev. A

 FDB2532_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics TA = 25°C unless otherwise noted

1.4 1.2
VGS = VDS, ID = 250μA ID = 250μA

NORMALIZED DRAIN TO SOURCE

1.2

BREAKDOWN VOLTAGE
THRESHOLD VOLTAGE
NORMALIZED GATE

1.1
1.0

0.8
1.0

0.6

0.4 0.9
-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (o C)

Figure 11. Normalized Gate Threshold Voltage vs Figure 12. Normalized Drain to Source
Junction Temperature Breakdown Voltage vs Junction Temperature

10000 10
VGS , GATE TO SOURCE VOLTAGE (V) VDD = 75V

CISS = CGS + CGD 8

COSS ≅ CDS + CGD

C, CAPACITANCE (pF)

6
1000

CRSS = CGD 4

WAVEFORMS IN
2 DESCENDING ORDER:
100 ID = 33A
VGS = 0V, f = 1MHz ID = 16A
50 0

0.1 1 10 150 0 20 40 60 80 100

VDS , DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC)

Figure 13. Capacitance vs Drain to Source Figure 14. Gate Charge Waveforms for Constant
Voltage Gate Currents

©2010 Fairchild Semiconductor Corporation FDB2532_F085 Rev. A

 FDB2532_F085 N-Channel PowerTrench® MOSFET
Test Circuits and Waveforms

VDS BVDSS

tP
VDS
L
IAS
VARY tP TO OBTAIN VDD
+
REQUIRED PEAK IAS RG
VDD
VGS -
DUT

tP
0V IAS 0
0.01Ω
tAV

Figure 15. Unclamped Energy Test Circuit Figure 16. Unclamped Energy Waveforms

VDS
VDD Qg(TOT)

VDS
L
VGS = 10V
VGS
+

VDD VGS
-

DUT VGS = 2V
0 Qgs2
Ig(REF)
Qg(TH)
Qgs Qgd

Ig(REF)
0

Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveforms

VDS tON tOFF

td(ON) td(OFF)

RL tr tf
VDS
90% 90%

+
VGS
VDD
10% 10%
- 0

DUT 90%
RGS
VGS 50% 50%
PULSE WIDTH
VGS 10%
0

Figure 19. Switching Time Test Circuit Figure 20. Switching Time Waveforms

©2010 Fairchild Semiconductor Corporation FDB2532_F085 Rev. A

 FDB2532_F085 N-Channel PowerTrench® MOSFET
Thermal Resistance vs. Mounting Pad Area
The maximum rated junction temperature, TJM , and the 80
thermal resistance of the heat dissipating path determines RθJA = 26.51+ 19.84/(0.262+Area) EQ.2
the maximum allowable device power dissipation, PDM , in an
application. Therefore the application’s ambient RθJA = 26.51+ 128/(1.69+Area) EQ.3

temperature, TA (oC), and thermal resistance RθJA (oC/W)

60
must be reviewed to ensure that TJM is never exceeded.

RθJA (o C/W)
Equation 1 mathematically represents the relationship and
serves as the basis for establishing the rating of the part.

(T –T )
JM A 40
P D M = ----------------------------- (EQ. 1)
R θ JA

In using surface mount devices such as the TO-263

package, the environment in which it is applied will have a 20
significant influence on the part’s current and maximum 0.1 1 10
power dissipation ratings. Precise determination of P DM is (0.645) (6.45) (64.5)
complex and influenced by many factors: AREA, TOP COPPER AREA in2 (cm2 )
Figure 21. Thermal Resistance vs Mounting
1. Mounting pad area onto which the device is attached and Pad Area
whether there is copper on one side or both sides of the
board.
2. The number of copper layers and the thickness of the
board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Fairchild provides thermal information to assist the
designer’s preliminary application evaluation. Figure 21
defines the RθJA for the device as a function of the top
copper (component side) area. This is for a horizontally
positioned FR-4 board with 1oz copper after 1000 seconds
of steady state power with no air flow. This graph provides
the necessary information for calculation of the steady state
junction temperature or power dissipation. Pulse
applications can be evaluated using the Fairchild device
Spice thermal model or manually utilizing the normalized
maximum transient thermal impedance curve.

Thermal resistances corresponding to other copper areas

can be obtained from Figure 21 or by calculation using
Equation 2 or 3. Equation 2 is used for copper area defined
in inches square and equation 3 is for area in centimeter
square. The area, in square inches or square centimeters is
the top copper area including the gate and source pads.

R
19.84
= 26.51 + -------------------------------------
θ JA (EQ. 2)
( 0.262 + Area )
Area in Inches Squared

R
128
= 26.51 + ----------------------------------
θ JA (EQ. 3)
( 1.69 + Area )
Area in Centimeters Squared

©2010 Fairchild Semiconductor Corporation FDB2532_F085 Rev. A

 FDB2532_F085 N-Channel PowerTrench® MOSFET
PSPICE Electrical Model
.SUBCKT FDB2532 2 1 3 ; rev April 2002
CA 12 8 1.4e-9
CB 15 14 1.6e-9 LDRAIN
CIN 6 8 5.61e-9 DPLCAP 5 DRAIN
2
10
Dbody 7 5 DbodyMOD RLDRAIN
Dbreak 5 11 DbreakMOD RSLC1
51 DBREAK
Dplcap 10 5 DplcapMOD +
RSLC2
5
ESLC 11
Ebreak 11 7 17 18 159 51
-
Eds 14 8 5 8 1 50 +
Egs 13 8 6 8 1 -
RDRAIN 17 DBODY
6
Esg 6 10 6 8 1 ESG 8
EBREAK 18
Evthres 6 21 19 8 1 EVTHRES -
+ 16
Evtemp 20 6 18 22 1 + 19 - 21
LGATE EVTEMP MWEAK
8
GATE RGATE + 6
It 8 17 1 18 -
1 22 MMED
9 20
RLGATE MSTRO
Lgate 1 9 9.56e-9
LSOURCE
Ldrain 2 5 1.0e-9 CIN
8 SOURCE
7 3
Lsource 3 7 7.71e-9
RSOURCE
RLSOURCE
RLgate 1 9 95.6
S1A S2A
RLdrain 2 5 10 12 RBREAK
13 14 15
RLsource 3 7 77.1 8 13
17 18

S1B S2B RVTEMP

Mmed 16 6 8 8 MmedMOD
13 CB 19
Mstro 16 6 8 8 MstroMOD CA IT
+ + 14 -
Mweak 16 21 8 8 MweakMOD
6 5 VBAT
EGS EDS +
8 8
Rbreak 17 18 RbreakMOD 1 - - 8
Rdrain 50 16 RdrainMOD 9.6e-3 22
Rgate 9 20 1.01 RVTHRES
RSLC1 5 51 RSLCMOD 1.0e-6
RSLC2 5 50 1.0e3
Rsource 8 7 RsourceMOD 3.0e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD

Vbat 22 19 DC 1

ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*190),3))}

.MODEL DbodyMOD D (IS=6.0E-11 N=1.09 RS=2.3e-3 TRS1=3.0e-3 TRS2=1.0e-6

+ CJO=3.9e-9 M=0.65 TT=4.8e-8 XTI=4.2)
.MODEL DbreakMOD D (RS=0.17 TRS1=3.0e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=1.0e-9 IS=1.0e-30 N=10 M=0.6)

.MODEL MmedMOD NMOS (VTO=3.55 KP=10 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.01)
.MODEL MstroMOD NMOS (VTO=4.2 KP=145 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=2.9 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=10.1 RS=0.1)

.MODEL RbreakMOD RES (TC1=1.1e-3 TC2=-9.0e-7)

.MODEL RdrainMOD RES (TC1=9.0e-3 TC2=3.5e-5)
.MODEL RSLCMOD RES (TC1=3.4e-3 TC2=1.5e-6)
.MODEL RsourceMOD RES (TC1=4.0e-3 TC2=1.0e-6)
.MODEL RvthresMOD RES (TC1=-4.1e-3 TC2=-1.4e-5)
.MODEL RvtempMOD RES (TC1=-4.0e-3 TC2=3.5e-6)

.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-6.0 VOFF=-4.0)

.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4.0 VOFF=-6.0)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.4 VOFF=1.0)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.0 VOFF=-1.4)

.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.

©2010 Fairchild Semiconductor Corporation FDB2532_F085 Rev. A

 FDB2532_F085 N-Channel PowerTrench® MOSFET
SABER Electrical Model
REV April 2002
ttemplate FDB2532 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=6.0e-11,nl=1.09,rs=2.3e-3,trs1=3.0e-3,trs2=1.0e-6,cjo=3.9e-9,m=0.65,tt=4.8e-8,xti=4.2)
dp..model dbreakmod = (rs=0.17,trs1=3.0e-3,trs2=-8.9e-6)
dp..model dplcapmod = (cjo=1.0e-9,isl=10.0e-30,nl=10,m=0.6)
m..model mmedmod = (type=_n,vto=3.55,kp=10,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=4.2,kp=145,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=2.9,kp=0.05,is=1e-30, tox=1,rs=0.1)
LDRAIN
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-6.0,voff=-4.0) DPLCAP 5 DRAIN
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-4.0,voff=-6.0) 2
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-1.4,voff=1.0) 10
RLDRAIN
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=1.0,voff=-1.4) RSLC1
c.ca n12 n8 = 1.4e-9 51
RSLC2
c.cb n15 n14 = 1.6e-9
c.cin n6 n8 = 5.61e-9 ISCL

50 DBREAK
dp.dbody n7 n5 = model=dbodymod -
6 RDRAIN
dp.dbreak n5 n11 = model=dbreakmod ESG 8 11
dp.dplcap n10 n5 = model=dplcapmod EVTHRES DBODY
+ 16
+ 19 - 21
LGATE EVTEMP MWEAK
spe.ebreak n11 n7 n17 n18 = 159 8
GATE RGATE + 18 - 6
spe.eds n14 n8 n5 n8 = 1 1 MMED EBREAK
9 22 +
spe.egs n13 n8 n6 n8 = 1 20
RLGATE MSTRO 17
spe.esg n6 n10 n6 n8 = 1 18 LSOURCE
spe.evthres n6 n21 n19 n8 = 1 CIN - SOURCE
8 7
spe.evtemp n20 n6 n18 n22 = 1 3
RSOURCE
RLSOURCE
i.it n8 n17 = 1
S1A S2A
12 RBREAK
13 14 15
l.lgate n1 n9 = 9.56e-9 8 13
17 18
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 7.71e-9 S1B S2B RVTEMP
13 CB 19
CA
14 IT -
res.rlgate n1 n9 = 95.6 + +
VBAT
res.rldrain n2 n5 = 10 EGS
6
EDS
5
8 8 +
res.rlsource n3 n7 = 77.1
- - 8
22
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u RVTHRES
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u

res.rbreak n17 n18 = 1, tc1=1.1e-3,tc2=-9.0e-7

res.rdrain n50 n16 = 9.6e-3, tc1=9.0e-3,tc2=3.5e-5
res.rgate n9 n20 = 1.01
res.rslc1 n5 n51 = 1.0e-6, tc1=3.4e-3,tc2=1.5e-6
res.rslc2 n5 n50 = 1.0e3
res.rsource n8 n7 = 3.0e-3, tc1=4.0e-3,tc2=1.0e-6
res.rvthres n22 n8 = 1, tc1=-4.1e-3,tc2=-1.4e-5
res.rvtemp n18 n19 = 1, tc1=-4.0e-3,tc2=3.5e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod

v.vbat n22 n19 = dc=1

equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/190))** 3))
}
}

©2010 Fairchild Semiconductor Corporation FDB2532_F085 Rev. A

 FDB2532_F085 N-Channel PowerTrench® MOSFET
SPICE Thermal Model JUNCTION
th
REV 26 February 2002

FDB2532

CTHERM1 TH 6 7.5e-3
CTHERM2 6 5 8.0e-3
CTHERM3 5 4 9.0e-3 RTHERM1 CTHERM1
CTHERM4 4 3 2.4e-2
CTHERM5 3 2 3.4e-2
CTHERM6 2 TL 6.5e-2
6
RTHERM1 TH 6 3.1e-4
RTHERM2 6 5 2.5e-3
RTHERM3 5 4 2.0e-2
RTHERM2 CTHERM2
RTHERM4 4 3 8.0e-2
RTHERM5 3 2 1.2e-1
RTHERM6 2 TL 1.3e-1
5
SABER Thermal Model
SABER thermal model FDB2532
template thermal_model th tl RTHERM3 CTHERM3
thermal_c th, tl
{
ctherm.ctherm1 th 6 =7.5e-3
4
ctherm.ctherm2 6 5 =8.0e-3
ctherm.ctherm3 5 4 =9.0e-3
ctherm.ctherm4 4 3 =2.4e-2
ctherm.ctherm5 3 2 =3.4e-2 RTHERM4 CTHERM4
ctherm.ctherm6 2 tl =6.5e-2

rrtherm.rtherm1 th 6 =3.1e-4
rtherm.rtherm2 6 5 =2.5e-3 3
rtherm.rtherm3 5 4 =2.0e-2
rtherm.rtherm4 4 3 =8.0e-2
rtherm.rtherm5 3 2 =1.2e-1
RTHERM5 CTHERM5
rtherm.rtherm6 2 tl =1.3e-1
}

RTHERM6 CTHERM6

tl CASE

©2010 Fairchild Semiconductor Corporation FDB2532_F085 Rev. A

 FDB2532_F085 N-Channel PowerTrench® MOSFET
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