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EDC_RevisedManual_2

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0% found this document useful (0 votes)
3 views

EDC_RevisedManual_2

Uploaded by

03abhi09
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Lab Manual

Electronic Devices and


Circuits Laboratory

Name :

Roll No. :

Batch :
Electronic Devices and Circuits Laboratory

Electronic Devices and Circuits Laboratory

Laboratory Manual
IInd Year Students
2019-2020

Department of Electrical Engineering


Malaviya National Institute of Technology
Jaipur-302017.

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Electronic Devices and Circuits Laboratory

LABORATORY GUIDELINES
Safety is very important in the Electronic Devices and Circuits Lab. So, follow
the safety practices in the laboratory.
Avoid direct contact with any voltage source and power plugs.
Wear rubber-soled shoes to avoid electrical shock. Sandals and slippers are
strictly prohibited during laboratory hours.
Avoid loose clothing. Professional attire(T-shirts, 3/4th pants are not allowed)
and proper grooming is must.
Do not wear any metallic rings, bangles, bracelets and wristwatches.
Be sure that your hands are dry and not standing on wet floor.
Ensure that the power is turned OFF before you start connecting up the circuit.
Get your circuit diagram approved by the staff member and connect up the
circuit as per the approved circuit.
When using connection points or plugs, check for any insulation damage in
leads and avoid such defective plugs.
Do not defeat any safety devices such as fuse or circuit breakers by shorting
across it. Safety devices protect you and your equipment.
Switch ON the power supply to your circuit and equipment only after getting
them checked up and approved by the staff member.
Check polarity markings and connections of instruments and components
carefully before connecting or turning on power.
Do not make any change in the connection without the approval of the staff
member.
In case you notice any abnormal condition in your circuit (like insulation or
resistor heating up, burning or smoke coming out), switch off the power to
your circuit immediately and inform the staff member.

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Electronic Devices and Circuits Laboratory

After completing the experiment, show up your reading or waveforms to the


staff member and dismantle your circuit after getting approval from the staff
member.
Never connect an ammeter across a voltage source. Only connect ammeters in
series with loads. An ammeter is a low-resistance device that, if connected in
parallel, will short out most components and usually destroy the ammeter.
Do not exceed the voltage and current ratings of instruments or other circuit
elements.
Some students have been found to damage the meters and equipment by
mishandling in the following ways.
o Keeping unnecessary materials like books, lab record, hand bag,
unused meters, etc. causing meters to fall down
o Putting pressure on the meter or equipment while making
connections or while talking or listening somebody.

Students are strictly warned that full cost of the meter or equipment will be
recovered from the individual who has damaged it in such a manner.

LAB POLICY AND GRADING

Each team member must participate in all aspects of the lab to insure a thorough
understanding of the equipment and concepts. The student is expected to be prepared
for each lab. Lab preparation includes reading the lab experiment and related
textbook materials. Active participation by each student in lab activities is expected.
If you have questions or problems with the preparation, contact your Teaching
Assistant or Instructor, but in a timely manner. A large portion of the student's grade

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Electronic Devices and Circuits Laboratory

is determined in the comprehensive final exam, so understanding the concepts and


procedure of each lab is necessary for successful completion of the lab. Students may
report any errors or suggestions in the lab manual to the Instructor. The students
should understand the following policy.

Attendance
Attendance is mandatory and any absence must be for a valid excuse and must be
documented. If the student is more than 5 minutes late (without valid reason), he/she
may not be allowed in the lab. Student should have minimum 75% of attendance for
successfully completing the lab course.

Lab manual
Each lab manual have 3 parts; the pre-lab, in-lab and post-lab section. The pre-lab
section discuss analysis work and preliminary hardware designs that were completed
prior to starting the lab. The in-lab section discusses what actually happened in the
lab and should include tables/graphs/waveforms of experimental data that you may
have taken into verify your circuits functionality. The post-lab section asses the
performance of in-lab system against pre-lab design. Record everything directly into
the Lab Manual during the experiment. Do not use scratch paper for recording data.
Further, students have to complete the previous week post-lab work in lab manual
and get approved from the staff member for completing the Lab Record. Late
submission may lead to lowering the grade of lab manual.

Lab Record
A neat, organized and complete record of an experiment is just as important as the
experimental work. So, The student must take care of the following hints during

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Electronic Devices and Circuits Laboratory

preparation of the Lab Record. In addition, the previous week experiment lab reports
should be submitted to instructor for approval. Late submission may lead to lowering
the grade of lab record.

Heading: The title and experiment number should be at the top of first page.
Aim/Objective: A brief but complete statement of what you intend to find out or
verify in the experiment should be at the beginning of each experiment.
Circuit Diagram: A circuit diagram should be drawn and labeled so that the actual
experiment circuitry could be easily duplicated at any time in the future. Be
especially careful to record all circuit changes made during the experiment.
Apparatus /Equipment List: List those items of equipment which have a direct
effect on the accuracy of the data. It may be necessary later to locate specific items
of equipment for rechecks if discrepancies develop in the results.
Theory: Discuss brefiely on the topic.
Procedure: In general, lengthy explanations of procedures are unnecessary. Be brief.
Short commentaries alongside the corresponding data may be used. Keep in mind the
fact that the experiment must be reproducible from the information given in your
notebook.
Data: Think carefully about what data is required and prepare suitable data tables.
Record instrument readings directly. Do not use calculated results in place of direct
data; however, calculated results may be recorded in the same table with the direct
data. Data tables should be clearly identified and each data column labeled and
headed by the proper units of measure.
Calculations: Equations and sample calculations for one set of data.
Graphs: Graphs are used to present large amounts of data in a concise visual form.
Data to be presented in graphical form should be plotted in the laboratory so that any
questionable data points can be checked while the experiment is still set up. If special
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Electronic Devices and Circuits Laboratory

graph paper is required, attach the graph sheets permanently into the Lab record.
Give all graphs a short descriptive title. Label and scale the axes. Use units of
measure. Label each curve if more than one on a graph.
Results: The results should be presented in a form which makes the interpretation
easy. Large amounts of numerical results are generally presented in graphical form.
Tables are generally used for small amounts of results. Theoretical and experimental
results should be on the same graph or arrange in the same table in a way for easy
correlation of these results.
Conclusion: This is your interpretation of the results of the experiment as an
engineer. Be brief and specific. Give reasons for important discrepancy.

Note: The model graph, circuit diagram model calculations and tables should be in
left hand side of the Record. Rest of the items should be in right hand side of the
record.

Grading
The final grade of this course is based on the following:
Continuous assessment: (60 %)
Pre-Lab, In-Lab, Viva-voce and Post-Lab Works
Lab Manual and Record
Final Exam: (40 %)
Written part viva-voce and practical part

The instructor reserves the right to alter or modify any part of this information at
his discretion if circumstances should dictate. Any changes should be announced
in the class prior to their effect.

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Students may meet the instructor for technical discussion outside of the lab hours
during Friday 8 a.m. - 9 a.m. or with prior appointments through
vijayk.ee@mnit.ac.in at his cabin situated in T-3.

TROUBLE SHOOTING HINTS

 Be Sure that the power is turned ON.


 Be sure the ground connections are common.
 Be sure the circuit you build is identical to your circuit diagram (Do a node by
node check)
 Be sure that the supply voltages are correct
 Be sure that the equipment is set up correctly and you are measuring the
correct parameters.
 If above steps are correct then you probably have used a component with the
wrong value or one that doesn’t work. It is also possible that the equipment
does not work (although this is not probable) or the breadboard you are using
may have some unwanted paths between nodes. To find your problem you
must trace through the voltages in your circuit node by node and compare the
signal you expect to have. Then if they are different use your engineering
judgment to decide what is causing the different or ask your lab assistant or
lab technician.

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UNDERTAKING FORM

I have read and understand these rules and procedures. I agree to abide by these rules
and procedures at all times while using these facilities. I understand that failure to
follow these rules and procedures will result in my immediate dismissal from the
laboratory and additional disciplinary action may be taken.

Date : Signature

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INDEX

S.No LIST OF EXPERIMENTS Date Marks Sign


1 Zener Diode Characteristics

2 Transistor CB Characteristics

3 Transistor CE Characteristics

4 FET Characteristics

5 Design and Frequency Response Of RC


Coupled Amplifier
6 UJT Characteristics

7 Common Emitter Amplifier

8 Emitter Follower

9 Study Of IC 555 As Monostable And Astable


Multivibrator
10 Realization Of Non-Inverting Amplifier And
Wien’s Bridge Oscillator Using Op-Amps
11 PN Junction Diode Characteristics

12 Half Wave Rectifier With And Without Filter

13 Full Wave Rectifier With And Without Filter

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Exp no : 01 Date :
ZENER DIODE CHARACTERISTICS
AIM:
1 . To P l ot t he Vol t – Am pere ch ara ct eri st i c s of a Zene r di ode.
2 . To F i nd t he Zener B reak down V ol t age, D yn am i c F orward R esi st ance and
D yn am i c R evers e R esi st ance of Z ener Di ode .

APPARATUS :
1 . P ower suppl y (0 – 30 V) – 1 No
2 . Zener Di od e 3.9V (or) 9.2V
(or) 5.1V – 1No
3 . Am m et er 0 – 30 mA – 1No
4 . Vol t m et er 0 – 1 V – 1No
0 – 10 V – 1No
5 . R esi st or 1K  – 1No

CIRCUIT DIAGRAM:
FO RWARD B IAS

Zener diode characteristics(Forward Bias)

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RE VE RS E B IAS

Zener diode characteristics(Reverse Bias)

TABULAR COLUMN:

FO RWARD B IAS :

VF
S L .No. I F (mA )
(Vol ts)

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Electronic Devices and Circuits Laboratory

RE VE RS E B IAS :

S L .No. V R (Vol ts) I R ( mA)

MODEL GRAPH

PROCEDURE:
FORWARD BIAS:
1 . C onnect t he ci r cui t as per t he ci rcui t di agram .
2 . Var y t he powe r sup pl y vol t age i n such a wa y t h at t he r eadi ngs are t aken
i n st eps of 0.1 V, t o t he m axi m um readi ng of power suppl y of 20 V.
3 . Not e down t he co rre spondi ng Am m et er a nd Vol t m et er re adi ngs.
4 . P l ot t he graph bet ween V F and I F .

5 . F i nd t he d ynam i c fo rward resi st ance usi ng r f   V 


I

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REVERSE BIAS:
1 . C onnect t he ci rcui t as per t he ci rcui t di agram
2 . Var y t he powe r sup pl y vol t age i n such a wa y t h at t he r eadi ngs are t aken
i n st eps of 2V, t o t he m axi m um readi ng of power suppl y of 20V
3 . Not e down t he co rre spondi ng Am m et er a nd Vol t m et er R eadi ngs.
4 . Once bre ak down occurs V Z rem ai ns fai rl y c onst ant ev en t hough I Z
i ncreas es.
5 . P l ot t he graph bet ween V R and I R .
6 . F i nd t he D ynam i c R everse R esi st an ce r   V 
I
R

PRECAUTIONS:
1 . C areful l y conne ct t he m et er t e rm i nal s (+ and –).
2 . C areful l y conne ct t he Zene r di ode t erm i nal s (Anode & C at h ode).
DISCUSSIONS:
1 . W hat i s m eant b y Ze ner Di ode?
2 . W hat i s m eant b y Ze ner B reak Down?
3 . W hat i s m eant b y A val anche B r eak Do w n?
4 . W hat i s m eant b y V ol t age R egul at i on?
5 . W hat i s t he di fferen ce bet we en Zen er D i ode and C onvent i onal R ect i f yi ng
Di ode?
6 . W hat i s t he purpose of seri es r esi st ance i n Zene r Di ode Vol t age
R egul at i on C i rcui t?
RESULT:
1 . Vol t – Am pere C har act eri st i cs of Z ener Di ode are pl ot t ed.
2 . Zener B r eak Down Vol t age =
3 . D yn am i c F orward R esi st ance =
4 . D yn am i c R evers e R esi st ance =

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Electronic Devices and Circuits Laboratory

Exp No: 02 Date :


TRANSISTOR COMMON BASE CHARACTERISTICS
AIM:
1 . To Obt ai n i nput and out put charact eri st i cs of t ransi st or C on nect ed i n
C om m on – base confi gurat i on.
2 . To Det erm i ne t h e h -par am et ers for C B confi gurat i on
APPARATUS:

1. P ower suppl i es (0 – 30) V – 2


2. Transi st or B C 107 – 1
3. R esi st ance 1 KΩ – 1
4. Vol t m et er (0 – 1) V – 1
(0 – 10 ) V – 1
5 . Am m et ers (0 – 30) m A – 2
6 . C onnect i ng wi res
7 . B read board

CIRCUIT DIAGRAM:

I NPUT CH ARACT E RIS T ICS :

Common-Base characteristics

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Electronic Devices and Circuits Laboratory

O UT PUT CH ARAC T E RIS T ICS :

Transistor common base characteristics

TABULAR COLUMN:

INPUT CHARACTERISTICS:

V C B = 0V VCB = 1 V V C B = O PE N
S L . No
V E B (V) I E (mA) V E B (V) I E (mA) V E B (V) I E (mA)

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Electronic Devices and Circuits Laboratory

OUTPUT CHARACTERISTICS:

I E = 2 mA I E = 4 mA I E = 6 mA
S L . No
V C B (V) I C (mA) V C B (V) I C (mA) V C B (V) I C (mA)

PROCEDURE:
I NPUT CH ARACT E RIS T ICS :
1 . C onnect t he ci rcui t as per t he ci rcui t di agram .
2 . S et V C B = 0V b y V a r yi ng t he C ol l ect or suppl y V C C .
3. Var y t he em i t t er sup pl y (i nput ) vol t age V E E and not e t he re a di ngs of I E
and V E B .
4. R epeat t he abov e pr ocedure for V C B = 1V and V C B = OP EN.
5 . P l ot t he i nput charact eri st i cs V E B Vs I E for const ant
6 . Val ues of V C B = 0V, 1V and OP EN.
7 . C al cul at e h -pa ram et ers from i nput cha r act eri st i cs gr aph
VEB = hib IE + hrb VCB IC = hfb IE + hob VCB
VEB
a. Reverse voltage gain hrb = IE Constant
VCB

VEB
b. Input Impedance hib = VCB Constant
I E

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Electronic Devices and Circuits Laboratory

OUTPUT CHARACTERISTICS:
1 . C onnect t he ci rcui t as per t he ci rcui t di agram .
S et I E = 2 m A b y ad j ust i ng V E E .
2 . Var y t he col l e ct or s uppl y vol t age V C C a nd not e t he readi ngs of I C and
VCB.
3. R epeat t he abov e pr ocedure for I E = 4 m A and 6m A
4 . P l ot t he out put charact eri st i cs V C B Vs I C for
5 . C onst ant val ues of I E = 2m A, 4m A and 6 m A.
6 . C al cul at e h -pa ram et ers from out put cha r act eri st i cs
I C
a. Output admittance hob = IE Constant
VCB
I
b. Forward current gain hfb = C VCB Constant
I E

CALCULATIONS:
VEB
1. Reverse voltage gain hrb = IE Constant
VCB

VEB
2. Input Impedance hib = VCB Constant
I E

I C
3. Output admittance hob = IE Constant
VCB

I C
4. Forward current gain hfb = VCB Constant
I E

TYPICAL VALUES :-

hib hrb hfb hob


22Ω 2.9x10-4 -0.98 0.50µs

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Electronic Devices and Circuits Laboratory

MODEL GRAPH

PRECAUTIONS :

1. Don’t short ci rcui t t he out put t erm i nal


2 . Don’t gi ve t he vol t a ge t o t he ci rcui t be yond t he presc ri bed r ange
3 . C areful l y var y t h e p ower suppl y
4 . C areful l y conne ct t he t ransi st or t erm i nal s

RESULT:
1 . Input an d Out put ch aract eri st i cs of t ran si st or connect ed i n C om m on B as e
C onfi gurat i on are o bt ai ned.
2 . h -param et ers fo r C B confi gurat i on ar e d et erm i ned.

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Electronic Devices and Circuits Laboratory

Exp no : 03 Date :

TRANSISTOR COMMON EMITTER CHARACTERISTICS

AIM:
1 . To Obt ai n Input and Out put chara ct eri st i cs of t ransi st or
C onnect ed i n C om m on Em i t t er C onfi gurat i on.
2 . To Det erm i ne t he h - param et e rs for C E c onfi gurat i on .
APPARATUS:
1 . P ower suppl i es 0 –30 V – 1 No
2 . Transi st or B C 107 – 1 No
3 . R esi st ance 1KΩ, 22KΩ – 1 No
4 . Vol t m et er s 0 – 1V, 0 –10V – 1 No
5 . Am m et ers 0 –30 m A – 1 No
0– 500 A – 1 No

CIRCUIT DIAGRAM:
Input Characteristics:

Transistor common emitter characteristics

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Electronic Devices and Circuits Laboratory

O UT PUT CH ARAC T E RIS T ICS :

Transistor common emitter characteristics

TABULAR COLUMN:

Input characteristics:

VCE = 0 V VCE = 2 V VCE = 5 V


S L .NO
V B E (V) I B (A) V B E (V) I B (A) V B E (V) I B (A)
(A )

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Electronic Devices and Circuits Laboratory

O UT PUT CH ARAC T E RIS T ICS :

I B = 50 A I B = 75 A I B = 100 A
S L .No
VCE I C (mA) VCE I C (mA) VCE I C (mA)

PROCEDURE:
I NPUT CH ARACT E RIS T ICS :
1 . C onnect t he ci rcui t as per t he ci rcui t di agram .
2 . S et V C E = 0 b y adj u st i ng V C C .
3 . Var y t he i nput vol t a ge V B B and not e t he readi ngs of
I B and V B E .
4. R epeat t he abov e pr ocedure for V C E = 2 Vand 5V .
5 . P l ot t he i nput charact eri st i cs V B E Vs I B for const ant
Val ues of V C E = 0V, 2Vand 5V
6 . C al cul at e h- pa ram e t ers from i nput char act eri st i cs gr aph
VBE = hie IB + hre VCE
IC = hfe IB + hoe VCE

VBE
a. Reverse voltage gain hre = IB Constant
VCE

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Electronic Devices and Circuits Laboratory

VBE
b. Input Impedance hie = VCE Constant
I B
O UT PUT CH ARAC T E RIS T ICS :
1 . C onnect t he ci rcui t as per t he ci rcui t di agram .
2 . S et I B = 50 A b y a dj ust i ng V B B .

3. Var y t he suppl y vol t age V C C and not e t he readi ngs o f I C and V C E . Take
V C E =V C C .
4. R epeat t he abov e pr ocedure for I B = 75 A and 100 A,
5 . P l ot t he out put charact eri st i cs V C E Vs I C for const ant
6 . Val ues of I B =50 A , 75 A and 100 A.
7 . C al cul at e h - pa ram e t ers from out put cha ract e ri st i cs graph

I C
c. Output admittance hoe = IB Constant
VCE

I C
d. Forward current gain hfe = VCE Constant
I B

CALCULATIONS:
VBE
1. Reverse voltage gain hre = IB Constant =
VCE
VBE
2. Input Impedance hie = VCE Constant =
I B
I C
3. Output admittance hoe = IB Constant =
VCE
I
4. Forward current gain hfe = C VCE Constant =
I B

TYPICAL VALUES :-

hie hre hfe hob


2000Ω 10-5 - 10-4 .1 -10µA/V 20-200

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MODEL GRAPH:

I NPUT CH ARACT E RIS T ICS :

O UT PUT CH ARAC T E RIS T ICS :

PRECAUTIONS:
1. Don’t short circuit the output terminal
2. Don’t give the voltage to the circuit beyond the prescribed range
3. Carefully vary the power supply
4. Carefully connect the transistor terminals

RESULT:
Input an d Out put ch aract eri st i cs of t ran si st or connect ed i n C om m on B as e
C onfi gurat i on are o bt ai ned

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Electronic Devices and Circuits Laboratory

Exp no : 04 Date :

FET CHARACTERISTICS
AIM:
1 . To Obt ai n Drai n and Transfe r cha ra ct eri st i cs of F ET con nec t ed i n
C om m on S ource confi gurat i on.
2 . To Obt ai n r d , g m and  of F ET.

APPARATUS:
1 . P ower suppl i es 0 – 30 V – 1 No
2 . F ET B F W 10 – 1 No
3 . Vol t m et er (0 – 10 V) – 2 Nos
4 . Am m et er 0 – 30 m A – 1 No

CIRCUIT DIAGRAM:

FET characteristics

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Electronic Devices and Circuits Laboratory

TABULAR COLUMNS:
T RANS FE R CH ARACT E RIS T ICS :

VDS = 2 V VDS = 4 V
S L .No
V G S (V) I D (mA) V G S (V) I D (mA)

O UT PUT (O R) DR AIN CH ARACT E R IS T ICS :

SL. VGS = 0 V V G S = –1V V G S = – 2V


No V D S (V) I D (mA) V D S (V) I D (mA) V D S (V) I D (mA)
(mA)

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PROCEDURE :
T RANS FE R CH ARACT E RIS T ICS :
1 . C onnect t he ci rcui t as per t he ci rcui t di agra m .
2 . S et V D S = 2 V b y adj ust i ng V D D .
3 . Var y t he i nput vol t a ge V G G and not e t he readi ngs of I D and V G S .
4. R epeat t he abov e pr ocedure for V D S = 4 V.
5 . P l ot t he t ransfer ch a ract e ri st i cs V G S Vs I D for const ant val u e s of V D S =
2 V and 4V.

6. F i nd Trans C onduct ance g m = I D VDS = Constant


VGS
O UT PUT (O R) DR AIN CH ARACT E R IS T ICS :
1. C onnect t he ci rcui t as per t he ci rcui t di agram .
2 . S et V G S = 0V b y adj ust i ng V G G .
3 . Var y t he suppl y vol t age V D D and not e t h e readi ngs o f I D an d V D S . Tak e
V D S =V D D .
4 . R epeat t he abov e pr ocedure for V G S = – 1V and – 2V.
5. P l ot t he out put charact eri st i cs V D S Vs I D f or constant valu es of V G S = 0
V, –1V and –2 V.
VDS
6. F i nd Drai n R esi st ance r d = VGS = Constant and
I D
7. Amplification Factor,  = g m x r d

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Electronic Devices and Circuits Laboratory

MODEL GRAPHS:

O u tp u t (or) d rai n ch aracteri sti cs Transfer characteristics:

PRECAUTIONS:

1. Don’t short circuit the output terminal


2. Don’t give the voltage to the circuit beyond the prescribed range
3. Carefully vary the power supply
4. Carefully connect the FET terminals

RESULT:

Drai n and Tr ansf er chara ct eri st i cs of F ET C onnect ed i n C om m on


S ource confi gu rat i on are obt ai ned.
Trans C onduct anc e, g m =
Drai n R esi st ance, r d =
Am pl i fi cat i on F act or,  = rd * gm

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Electronic Devices and Circuits Laboratory

Exp no :05 Date :


DESIGN AND MEASURE OF FREQUENCY RESPONSE OF RC
COUPLED AMPLIFIER
AIM:
Design and measure the frequency response of a RC coupled amplifier using discrete
components.
APPARATUS:
1 . P ower suppl y 12V dc suppl y – 1No
2 . Transi st or B C 107 – 2Nos
3 . R esi st ors 1K, 5.6K – 2Nos
4.7K, 27K – 2Nos
4 . C apaci t ors 10 F – 3No s
100 F – 2Nos
5. CRO – 1No
6 . F unct i on generat or – 1No
CIRCUIT DIAGRAM:

Cc =10µF

Cc =10µF

RC coupled amplifier

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Electronic Devices and Circuits Laboratory

TABULAR COLUMN:
Input Voltage, Vi = Constant
SL. FREQUENCY OUTPUT VOLTAGE GAIN GAIN (DB)
NO. (Hz) VOLTAGE(V0)(mV) (AV )=V0/VI 20 log10|AV|

PROCEDURE:
1 . Appl y i nput si gnal of 10m V am pl i t ude and frequen c y o f 50Hz at t he i nput
t erm i nal
2 . Var yi ng t he i nput si gnal frequ enc y f rom 10Hz t o 1MHz
3 . M easure t he out put si gnal am pl i t ude
4 . S t ud y t h e fr equenc y response ch ara ct eri st i cs of R C coupl ed am pl i fi er
5 . Det erm i ne t he l ow er cut off frequ enc y and t he upper cut off fr equenc y
from t he graph
6 . C al cul at e t he bandw i dt h
PRECAUTIONS:
1. Do not use open ended wires for connecting 230V power supply
2 . B efore conn ect i ng t he power suppl y pl ug i nt o t he socket ,ensure pow er
s uppl y shoul d be sw i t ched off
3 . Ensure al l conne ct i on shoul d be t i ght before swi t chi ng ON t he suppl y
4 . Take r eadi ngs ca ref ul l y
5 . P ower suppl y shoul d be swi t ched of f af t er com pl et i on of t h e expe ri m ent

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Electronic Devices and Circuits Laboratory

FREQUENCY RESPONSE:

RESULT:
Frequency response of the RC coupled amplifier is obtained

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Electronic Devices and Circuits Laboratory

Exp no : 06 Date :

UJT CHARACTERISTICS
AIM:
To observe the characteristics of UJT and to calculate the Intrinsic Stand-Off Ratio (η).

APPARATUS:
1. Regulated Power Supply (0-30V, 1A) - 2Nos
2. UJT 2N2646 - 1No.
3. Resistors 10kΩ, 47Ω, 330Ω - 1 No.
4. Multimeters - 2Nos
5. Breadboard
6. Connecting Wires
CIRCUIT DIAGRAM

VBB

UJT characteristics
PROCEDURE:
1. Connect the circuit as per the circuit diagram
2. Output voltage is fixed at a constant level and by varying input voltage corresponding emitter
current values are noted down.

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Electronic Devices and Circuits Laboratory

3. This procedure is repeated for different values of output voltages.


4. All the readings are tabulated and Intrinsic Stand-Off ratio is calculated using

η = (Vp-VD) / VBB

5. A graph is plotted between VEE and IE for different values of VBE.

MODEL GRAPH:

CALCULATION

VP = ηVBB + VD

η = (VP-VD) / VBB

η = ( η1 + η2 + η3 ) / 3

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Electronic Devices and Circuits Laboratory

TABULATIONS:

At VBB=5V constant At VBB=10V constant

VEB(V) IE(mA) VEB(V) IE(mA)

RESULT:

The characteristics of UJT are observed and the values of Intrinsic Stand-Off Ratio are calculated.

VIVA QUESTIONS
1. What is the symbol of UJT?
2. Draw the equivalent circuit of UJT?
3. What are the applications of UJT?
4. Formula for the intrinsic standoff ratio?
5. What does it indicates the direction of arrow in the UJT?
6. What is the difference between FET and UJT?
7. Is UJT is used an oscillator? Why?
8. What is the Resistance between B1 and B2 is called as?
9. What is the value of resistance between B1 and B2?
10. Draw the characteristics of UJT?

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Electronic Devices and Circuits Laboratory

Exp no :07 Date :

COMMON EMITTER AMPLIFIER


AIM:
1. To Obtain Frequency Response of Common Emitter Amplifier.
2. To Find voltage gain, current gain, input impedance, output impedance, and Bandwidth
from Frequency Response curve.
APPARATUS:
1. Power supply (0-30V) – 1 No
2. C. R. O – 1 No
3. Function Generator – 1 No
4. Transistor BC107 – 1 No
5. Resistor 1kΩ, 10kΩ – 2 Nos
100kΩ , 4.7kΩ – 1 No
6. Capacitors 1OμF, 4.7μF – 1 No
7. Pot Resistance – 1 No
CIRCUIT DIAGRAM:

Common emitter amplifier

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Electronic Devices and Circuits Laboratory

TABULAR COLUMN:
Input Voltage, Vi =
VOLTAGE
SL. FREQUENC OUTPUT GAIN (DB)
GAIN
NO. Y (Hz) VOLTAGE(V0)(mV) 20 log10|AV|
(AV )=V0/VI

PROCEDURE:
1. Connect the circuit as per the circuit diagram.
2. Keep Vi = 10 mv by adjusting source voltage (Vs) throughout the experiment.
3. Vary the input signal frequency from 50 Hz to 1 MHz and note down the
corresponding output voltage by CRO.
4. Draw the frequency response curve taking Frequency on X-axis and Gain in dB on Y-axis
and calculate the bandwidth from the graph.
5. Calculate R0 by varying pot resistance at the output until V0 becomes half of maximum
output voltage.
6. Calculate AV, Ai, Ri .

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Electronic Devices and Circuits Laboratory

FREQUENCY RESPONSE:

f(Hz)

CALCULATIONS:
Voltage gain (Av) =Vo/Vi =
Input resistance (Ri)
Vi X Rs
Ri  =
Vs  Vi
Band width (BW) = f2 –f1 =
PRECAUTIONS:
1. Avoid loose connections
2. Carefully note the readings from CRO without parallax error.
3. Carefully connect the transistor terminals.
DISCUSSIONS:
1. What is the type of coupling used in this amplifier circuit?
2. Write the role of Ce, Cc capacitors
3. What is mid frequency gain?
RESULT:
Frequency Response of Common Emitter Amplifier is obtained.
Voltage gain AV =
Current gain Ai =
Input resistance Ri =
Out put resistance Ro =
Bandwidth BW =

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Electronic Devices and Circuits Laboratory

Exp no :08 Date :

EMITTER FOLLOWER (CC)


AIM:
1. To Obtain Frequency Response of Emitter Follower.
2. To Find the voltage gain, current gain, input impedance, output impedance and Bandwidth
from Frequency Response curve.
APPARATUS:
1 . P ower suppl i es 0 – 30 V – 1No
2 . Transi st or B C 107 – 1No
3 . R esi st ors 1K, 10K – 1No
100K, 8.2K – 1No
4 . C apaci t ors 10 F – 2No s

CIRCUIT DIAGRAM:

Emitter follower (cc)

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Electronic Devices and Circuits Laboratory

TABULAR COLUMN:
Input Voltage, Vi =
SL. FREQUENCY OUTPUT VOLTAGE GAIN GAIN (DB)
NO. (Hz) VOLTAGE(V0)(mV) (AV )=V0/VI 20 log10|AV|

PROCEDURE:
1. Connect the circuit as per the circuit diagram.
2. Keep Vi = 10 mv by adjusting source voltage (Vs) throughout the experiment.
3. Vary the input signal frequency from 50 Hz to 1 MHz and note down the
4. Corresponding output voltage by CRO.
5. Draw the frequency response curve taking Frequency on X-axis and Gain in dB on Y-axis
and calculate the bandwidth from the graph.
6. Calculate R0 by varying pot resistance at the output until V0 becomes half of maximum
output voltage.
7. Calculate AV, Ai, Ri.
FREQUENCY RESPONSE:

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Electronic Devices and Circuits Laboratory

f(Hz)

CALCULATIONS:
Voltage gain (Av) =Vo/Vi
Vi X Rs
Input resistance Ri 
Vs  Vi
(VNL  VFL )
Out put resistance (Ro) = R L
VFL
Band width (BW) = f2 –f1

PRECAUTIONS:
1. Avoid loose connections
2. Carefully note the readings from CRO without parallax error.
3. Carefully connect the transistor terminals

RESULT:
Frequency Response of Common Emitter Amplifier is obtained.
Voltage gain AV =
Current gain Ai =
Input resistance Ri =
Out put resistance Ro =
Bandwidth BW =

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Electronic Devices and Circuits Laboratory

Exp no : 09 Date :
STUDY OF IC 555 AS MONOSTABLE AND ASTABLE
MULTIVIBRATOR
AIM:
1 . To desi gn t he m onost abl e m ul t i vi brat or usi ng IC 555
2 . To desi gn t he ast abl e m ul t i vi brat or usi ng IC 555
APPARATUS:
1 . IC 555 1No
2 . P ower suppl y 5V DC 1No
3 . C apaci t or 0. 1 F ,0.01 F 1No
4 . R esi st or 4.4 KΩ,8.2KΩ 1 No
5 . B read board 1 No
6 . C onnect i ng P at ch ch ords
CIRCUIT DIAGRAM:

Astable Multivibrator

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Electronic Devices and Circuits Laboratory

Monost abl e Mul t i vibrat or


MODEL WAVEFORMS:
AS T AB L E MUL T IVIB RAT O R :

MO NO S T AB L E MUL T IVIB RAT O R :

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Electronic Devices and Circuits Laboratory

PROCEDURE:
AS T AB L E MUL T IVIB RAT O R :
1 . C onnect t he el em ent s as shown i n t he ci rcui t di agram
2 . C onnect t he out put of t he IC 555 t o t he osci l l at or
3 . Aft er not i ci ng t he o ut put connect t he ou t put t o t he capaci t or C
4 . Then m easur e t he ch argi ng and di scha rgi ng t i m e from t he osci l l at or
5 . Then cal cul at e t he d ut y c ycl e usi ng t he osci l l at or out put
MO NO S T AB L E MUL T IVIB RAT O R :
1. C onnect t he el em ent s as shown i n t he ci rcui t di agram
2. C onnect t he out put of t he IC 555 t o t he osci l l at or
3. C al cul at e t he t i m e p eri od of t he w avefo r m

DESIGN
AS T AB L E MUL T IVIB RAT O R :
Let Ra=4.4kΩ and Rb=8.2kΩ; C=0.1µF and C1=0.01µF
The time during which the capacitor charges from 1/3 VCC to 2/3 VCC is equal to the time the output
remains high and is given by

tc = 0.69(Ra+Rb)C
=0.87 ms
Similarly, the time during which the capacitor discharges from 2/3 VCC to 1/3 VCC is equal to the
time the output remains low and is given by
td =0.69RbC
=0.566 ms
Thus the total period of the waveform is
T =tc + td
=0.69(Ra+2Rb) C
=1.436 ms
And the frequency of oscillation as
fo = 1/T

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Electronic Devices and Circuits Laboratory

= 1.45(Ra+2Rb) C

= 696.3 Hz

Therefo re %dut y c ycl e = (t c / T) ×100


= 60.6
MO NO S T AB L E MUL T IVIB RAT O R :
Let t he cap aci t or be C = 1 F
The val ue of R t hat yi el ds an out put pu l se of 1 second i n t he m onos t abl e
ci rcui t can b e found out .
Ti m e peri od T = 1.1R C
T =1S , C =1 F Then,
1S =1.1×R ×1 F
S o, R =910.23Ω

RESULT:
Desi gn of ast abl e and m onost abl e m ul t i vi brat or i s perform ed and t he
wavefo rm s are obt ai ned

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Electronic Devices and Circuits Laboratory

Exp no : 10 Date :
REALIZATION OF NON-INVERTING AMPLIFIER AND WIEN’S
BRIDGE OSCILLATOR USING OP-AMPS
AIM:
1 . Desi gn and re al i z e t he non -i nvert i ng am pl i fi er usi ng op am ps
2 . Desi gn and re al i z e t he W i en’s bri dge os ci l l at or usi ng op am ps
APPARATUS:
1 . IC 741 1No
2 . P ower suppl y 0-230V 1No
±12V 1No
3 . R esi st ors 1KΩ , 10KΩ ,20KΩ 1No
3.2KΩ 2No
4 . C apaci t ors 0.05µ F 2No
5 . B read B oard 1No
6. CRO 1No
7 . C onnect i ng l eads
THEORY:
NON-INVERTING AMPLIFIER:
The op-amp is a multiterminal device used in many electronic circuits. It has two input
terminal namely inverting and non-inverting. The non- inverting amplifier is an amplifier with
inverting terminal grounded and non- inverting terminal to the supply.
V1=0 & V2=Vin and the output is given by
Vo=A Vin
The output is gain A times the input.Output obtained is greater than the input
A=1+(Rf/R1)
WIEN’S BRIDGE OSCILLATOR:
The oscillator is a circuit which generates repetitive waveforms of fixed frequency and
amplitude without any external input signal.The frequency of the output of Wien’s bridge oscillator
is
1
f= 2𝜋𝑅𝐶 (We take R1=R2=R, C1=C2=C)

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Electronic Devices and Circuits Laboratory

CIRCUIT DIAGRAM:

Non-Inverting Amplifier

Wien’s Bridge Oscillator


MODEL WAVEFORM
N O N - I N V E R T I N G AM P L I F I E R :

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Electronic Devices and Circuits Laboratory

WI E N’S B RIDG E O S CIL L AT O R:

PROCEDURE:
NO N-I NVE RT ING AMPL IFIE R :
1 . C onnect t he ci rcui t of t he non -i nvert i ng am pl i fi er as shown i n t he ci rcui t
di agram on bre ad bo ard.
2 . C onnect t he i nput of op am p t o funct i on generat o r and out pu t t o t he C R O
3 . F eed t he i nput from funct i on gener at or a nd observe t he out p ut on C R O
4 . Draw t he i nput and out put waveform s
5 . The am pl i fi ed out pu t i s obt ai ned
WI E N’S B RIDG E O S CIL L AT O R:
1 . C onnect t he ci rcui t as shown i n t he ci rc ui t di agram
2 . S wi t ch ON t he powe r suppl y
3 . Out put i s obt ai ned i n t he C R O
PRECAUTIONS:
1 . Do not use open end ed wi res fo r conne ct ed t o 230Vsuppl y
2 . B efore conn ect i ng t he power suppl y pl ug i nt o t he socket ,ensure pow er
s uppl y shoul d be sw i t ched off
3 . Ensure al l conne ct i on shoul d be t i ght before swi t chi ng ON t he suppl y
4 . Take r eadi ngs ca ref ul l y
5 . P ower suppl y shoul d be swi t ched of f af t er com pl et i on of t h e experi m ent

RESULT:
1 . Am pl i fi ed out put of t he Non - Inve rt i ng Am pl i fi e r i s obt ai ned.
2 . S i ne wave out put of t he W i en’s B ri dge Osci l l at or i s obt ai ned.

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Electronic Devices and Circuits Laboratory

Exp no : 11 Date :
PN JUNCTION DIODE CHARACTERISTICS
AIM:
1. To pl ot t he Vol t –Am pere ch ara ct eri st i c s of gi ven P – N j unct i on Di ode
2 . To F i nd t he S t at i c, d ynam i c F or ward an d R everse R esi st anc es of Di ode.
APPARATUS:
1 . P ower suppl y (0 – 30 V) – 1 No
2 . Di ode 1N4007 – 1 No
B E L DR 25 – 1 No
3 . R esi st ance 1 KΩ – 1 No
4 . Am m et er (0 – 30 m A) – 1 No
(0 – 100 A) – 1 No
5 . Vol t m et er (0 – 1 V) – 1 No
6 . B read board – 1 No
7 . C onnect i ng P at ch ch ords

CIRCUIT DIAGRAM:

FORWARD BIAS:

Forward bias characteristics of PN junction diode

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Electronic Devices and Circuits Laboratory

RE VE RS E B IAS :

Reverse bias characteristics of PN junction diode


TABULAR COLUMN:
FO RWARD B IAS :
S IL ICO N G E RMANIUM
S L .N o.
V F (V) I F (mA ) V F (V) I F (mA )

RE VE RS E B IAS :
G E RMANIUM
S L .No.
V R (V) I R (µ A)

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Electronic Devices and Circuits Laboratory

MODEL GRAPH:

PROCEDURE:
FO RWARD B IAS :
1 . C onnect t he ci rcui t as per t he ci rcui t di agram .F or B ot h S i l i con and
Germ ani um Di odes.
2 . Var y t he power sup pl y i n such a wa y t hat t he readi ngs are t aken i n s t eps
of 0.1V, t o t he m axi m um readi ng of pow er suppl y o f 30V.
3 . Not e down t he co rre spondi ng Am m et er a nd Vol t m et er re adi ngs.
4 . P l ot t he graph bet ween F orwa rd vol t age and curr ent (V F and I F . )
5 . F i nd t he S t at i c F orward R esi st ance R F = V/ I Ω.

V
6 . F i nd t he D ynam i c F orward R esi st an ce rF  .
I
REVERSE BIAS:
4. C onnect t he ci rcui t as per t he ci rcui t di agram .
5. Var y t he powe r su ppl y i n su ch a wa y t hat t h e r eadi ngs are t aken i n
st eps of 2V, t o t he m axi m um readi ng of power suppl y of 30 V.
6. Not e t he cor respond i ng Am m et er and P ower S uppl y readi ngs .
7. P l ot t he graph bet ween V R and I R .
8. F i nd t he S t at i c R everse R esi st ance R r = V/ I Ω.
9. F i nd t he D ynam i c R everse R esi st an ce V
rR  
I

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Electronic Devices and Circuits Laboratory

PRECAUTIONS:
1 . Don’t gi ve vol t age t o t he ci rcui t be yond prescri bed rang e.
2 . Don’t short ci rcui t t he out put t erm i nal of power suppl y.
3 . C areful l y conne ct m et er t erm i nal s ( + an d –).
4 . C areful l y conne ct p – n di ode t erm i nal s (anode and cat hode ) .

DISCUSSIONS:
1 . W hat i s m eant b y de pl et i on l a ye r?
2 . W h y m o re cu rrent fl ows i n forward bi as ?
3 . Expl ai n how a di ode act s as a swi t ch.
4 . Expl ai n how a di ode act s as a r ect i fi e r.
5 . In rev erse sat ur at i on curr ent i s i ndep en dent of forw ard and rev ers e bi as?
W h y?
6 . W hat i s m eant b y d ynam i c and st at i c r esi st ance of a di od e?

RESULT:
1 . Vol t – Am pere C h ar act eri st i cs of P -N D i ode are pl ot t ed.
2 . S t at i c F orward R esi st ance R F =
3 . S t at i c R everse R esi s t ance R r =
4 . D yn am i c F orward R esi st ance =
5 . D yn am i c R evers e R esi st ance =

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Electronic Devices and Circuits Laboratory

Exp no : 12a Date :

HALF WAVE RECTIFIER WITHOUT FILTER


AIM:
To Find the Ripple factor and Percentage of Regulation of a Half Wave Rectifier with out
Filter.
APPARATUS:
1. Step down transformer 230V/50 Hz: _ 1 No.
(9-0-9) V
2. Diode 1N4007 – 1 No.
3. DRB (Decade Resistance Box) – 1 No.
4. Ammeter (0 –250 mA) – 1 No.
5. Multimeter – 1 No.

CIRCUIT DIAGRAM

Half wave rectifier without filter

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Electronic Devices and Circuits Laboratory

TABULAR COLUMN:

No Load DC Voltage, Vdc0 =


% of
Idc Regulation =
SL.No. RL () Vdc (V) Vac (V) r = Vac/Vdc
(mA)
[(Vdco – Vdc)/Vdc] X 100

PROCEDURE:
1. Connect the circuit as per the circuit diagram
2. Note down the No Load DC Voltage Vdc0 when Idc = 0
3. Vary the load resistance RL (DRB) and note down Idc and Vdc, Vac Using Multimeter
a. Calculate the ripple factor ( r)
RMS values of AC component Vac
r 
Average value Vdc
b . Calculate the Percentage of Regulation = [ ( V d c 0 – V d c ) / V d c ] x 1 0 0 or
(VNL – VFL)/VFL X100
4. Draw the following graphs
i). Vdc Vs RL
ii) Vdc Vs Idc
iii) Percentage of Regulation Vs Idc. Taking Vdc on y – axis.

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Electronic Devices and Circuits Laboratory

MODEL WAVEFORMS:

MODEL GRAPHS:

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Electronic Devices and Circuits Laboratory

PRECAUTIONS:
1. Don’t give the voltage to the circuit beyond prescribed range.
2. Don’t short circuit the output terminal.
3. Carefully connect meter & electrolytic capacitors terminals (+ and –)
4. Carefully connect diode terminals (anodes and cathodes).

RESULT:
Ripple factor and Percentage of Regulation of a Half Wave Rectifier with out
Filter is found.
Ripple Factor =
Percentage of Regulation =

Electrical Engineering Department Page 45


Electronic Devices and Circuits Laboratory

Exp no : 12b Date :

HALF WAVE RECTIFIER WITH FILTER

AIM:
To Find the Ripple factor and Percentage of Regulation of a Half Wave Rectifier with
Filter.
APPARATUS:
1. Step down transformer 230V/50 Hz: (9-0-9) V – 1 No
2. Diode 1N4007 – 1 No.
3. DRB (Decade Resistance Box) – 1 No.
4. Ammeter (0 –250 mA) – 1 No.
5. Multimeter – 1 No.
6. Capacitors 220 µF – 1 No
7. Inductor 3mH – 1.No

CIRCUIT DIAGRAM

Half wave rectifier with filter

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Electronic Devices and Circuits Laboratory

TABULAR COLUMN:

No Load DC Voltage, Vdc0 =


% of
Idc
SL.No. RL () Vdc (V) Vac (V) r = Vac/Vdc Regulation =
(mA)
[(Vdco – Vdc)/Vdc] X 100

PROCEDURE:
1. Connect the circuit as per the circuit diagram.
2. Note down the No Load DC Voltage Vdc0 when Idc = 0
3. Vary the load resistance RL (DRB) and note down Idc and Vdc, Vac, using
Multimeter.
4. Calculate the ripple factor (r)
RMS values of AC component Vac
r 
Average value Vdc

5. Calculate the Percentage of Regulation= [( V d c 0 – V d c ) / V d c ] x 10 0


(or) (VNL – VFL)/VFL X100
6. Draw the following graphs
i). Vdc Vs RL
ii) Vdc Vs Idc
iii) Percentage of Regulation Vs Idc. Taking Vdc on y – axis.

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Electronic Devices and Circuits Laboratory

MODEL WAVEFORMS:

MODEL GRAPHS:

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Electronic Devices and Circuits Laboratory

PRECAUTIONS:
1. Don’t short circuit the output terminal.
2. Carefully connect meter & electrolytic capacitors terminals (+ and –)
3. Carefully connect diode terminals (anodes and cathodes).

RESULT:
Ripple factor and Percentage of Regulation of a Half Wave Rectifier with Filter is found.
Ripple Factor =
Percentage of Regulation =

Electrical Engineering Department Page 49


Electronic Devices and Circuits Laboratory

Exp no : 13a Date :

FULL WAVE RECTIFIER WITHOUT FILTER

AIM:
To Find the Ripple factor and Percentage of Regulation of a Full Wave Rectifier with out
Filter.

APPARATUS:
1. Step down transformer 230V/50 Hz: (9-0-9) V – 1 No
2. Diode 1N4007 – 1 No.
3. DRB (Decade Resistance Box) – 1 No.
4. Ammeter (0 –250 mA) – 1 No.
5. Multimeter – 1 No.

CIRCUIT DIAGRAM

Full wave rectifier without filter

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Electronic Devices and Circuits Laboratory

TABULAR COLUMN:
No l oad D.C Vol t ag e, V d c 0 =

% of
Idc Regulation =
SL.No. RL () Vdc (V) Vac (V) r = Vac/Vdc
(mA)
[(Vdco – Vdc)/Vdc] X 100

PROCEDURE:
1. Connect the circuit as per the circuit diagram.
2. Note down the No Load DC Voltage Vdc0 when Idc = 0
3. Vary the load resistance RL (DRB) and note down Idc and Vdc, Vac using Multimeter.
4. Calculate the ripple factor ( r)
RMS values of AC component Vac
r 
Average value Vdc
5 . Calculate the Percentage of Regulation = [(V d c 0 – V d c )/ V d c ] x 100
(Or) (V N L – V F L )/ V F L X1 00
6. Draw the following graphs
i). Vdc Vs RL
ii) Vdc Vs Idc
iii) Percentage of Regulation Vs Idc. Taking Vdc on y – axis.

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Electronic Devices and Circuits Laboratory

MODEL GRAPH

MODEL WAVEFORMS

PRECAUTIONS:
1. Don’t short circuit the output terminal.
2. Carefully connect meter & electrolytic capacitors terminals (+ and –)
3. Carefully connect diode terminals (anodes and cathodes).
RESULT:
Ripple factor and Percentage of Regulation of a Full Wave Rectifier with out Filter is
found.
Ripple Factor =
Percentage of Regulation =

Electrical Engineering Department Page 52


Electronic Devices and Circuits Laboratory

Exp no : 13b Date :

FULL WAVE RECTIFIER WITH FILTER

AIM:
To Find the Ripple factor and Percentage of Regulation of a Full Wave Rectifier without
Filter.

APPARATUS:
1. Step down transformer 230V/50 Hz: (9-0-9) V – 1 No
2. Capacitors 220 µF – 1 No
3. Diode 1N4007 – 1 No.
4. DRB (Decade Resistance Box) – 1 No.
5. Ammeter (0 –250 mA) – 1 No.
6. Multimeter – 1 No.
7. CRO – 1 No

CIRCUIT DIAGRAM:

Full wave rectifier with filter

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Electronic Devices and Circuits Laboratory

TABULAR COLUMN:
No l oad D.C Vol t ag e, V d c 0 =

% of
Idc Regulation =
SL.No. RL () Vdc (V) Vac (V) r = Vac/Vdc
(mA)
[(Vdco – Vdc)/Vdc] X 100

PROCEDURE:
1. Connect the circuit as per the circuit diagram.
2. Note down the No Load DC Voltage Vdc0 when Idc = 0
3. Vary the load resistance RL (DRB) and note down Idc and Vdc, Vac using Multimeter.
RMS values of AC component Vac
4. Calculate the ripple factor ( r) r  
Average value Vdc

5. Calculate the Percentage of Regulation = [(V d c 0 – V d c )/ V d c ] x 100


(Or) (V N L – V F L )/ V F L X1 00
6. Draw the following graphs
i). Vdc Vs RL
ii) Vdc Vs Idc
iii) Percentage of Regulation Vs Idc. Taking Vdc on y – axis.

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Electronic Devices and Circuits Laboratory

MODELWAVEFORMS :

MODEL GRAPHS

PRECAUTIONS:
1. Don’t short circuit the output terminal.
2. Carefully connect meter & electrolytic capacitors terminals (+ and –)
3. Carefully connect diode terminals (anodes and cathodes).

RESULT:
Ripple factor and Percentage of Regulation of a Full Wave Rectifier with
Filter is found.
Ripple Factor =
Percentage of Regulation =

Electrical Engineering Department Page 55

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