ECE315 / ECE515

Lecture – 6 Date: 29.08.2016

• CS Amplifier with Constant Current Source, Triode Load,

Source Degenerated Resistor, Examples
• Common Drain Amplifier
• Examples
 ECE315 / ECE515
Constant Current Source

PFET ideal current source

NFET ideal current source
• As long as a MOS transistor is in saturation region and λ=0, the current is
independent of the drain voltage and it behaves as an ideal current source
seen from the drain terminal.

Example of poor current source

• Since the variation of the source voltage directly affects the current of a MOS
transistor, it does not operate as a good current source if seen from the source
terminal
 ECE315 / ECE515
CS Amplifier with Constant Current Source (contd.)
The dc voltage VGS2
is constant and
therefore v1 =0 →
leads to gm2v1 =0

Av   g m1 (ro1 ro 2 )

• Both the load and the device operates in saturation

• The gain is loosely dependent on |VDS| of M2 → as it regulates ro2
• The voltage |VDS2,min|=|VGS2 – VT2| can be reduced → by increasing (W/L)2 →
increases VD1→ in essence the output voltage swing
• ro2 can be increased → by reducing the channel length modulation effect →
through increasing the length and width of M2 → while keeping 𝑉𝐺𝑆2 − 𝑉𝑇2
constant → However, this also brings large capacitance at the output of M2.
 ECE315 / ECE515
CS Amplifier with Constant Current Source (contd.)
• At a given drain current, W has to increase with the increasing L (ro α L/ID) for
obtaining higher gain.
• If length of M1 is increased by a factor → then the width has to be increased
proportionally → for a given ID1, VGS1–VT1 is directly proportional to (W/L)1 → if
W1 is not scaled properly then it will reduce VGS1–VT1 → will effectively lead to
reduced voltage swing.
• Furthermore, just scaling of L1 leads to reduced gm1 → in essence possibility of
reduced gain.
However, g m1ro1  2   nCox I D
W 1
•
 L 1 ID
• The gain will increase with increasing L1 considering that λ depends more
strongly on length than gm does.
• for M2, increase in L2 while keeping W2 constant → increases ro2 → increases
gain of the CS amplifier → but decreases |VDS2| → reduces the output voltage
swing.
 ECE315 / ECE515
CS Amplifier with Triode Load
1
Ron 2 
 pCox (W / L) 2 (VDD  Vb  | VTP |)

Av   g m1Ron 2 Av   g m1 (ro1 Ron 2 )

• The main limitation of this technique is the dependence of gain on the process
parameters → because Ron is dependent on these parameters.
• Process parameters are temperature dependent → makes gain dependent on
temperature.
• Triode loads consume less voltage headroom as compared to diode-connected
load → Here, Vout,max=VDD.
 ECE315 / ECE515
CS Amplifier with Source Degeneration
small signal
model
KCL gives
vout vout
KVL gives g mv1    v1  
RD g m RD
vin  v1  g mv1RS vout
 vin   1  gm RS 
g m RD
vout g m RD
• Therefore the voltage gain: Av  
vin 1  g m RS 
• The input resistance: Rin  
• The output resistance: Rout  RD Valid as long as M1
R is in saturation
• For large RS: Av   D Linear
RS
VDD  Vin  VT  I D RD VDD  I D RD  Vin  VT
 ECE315 / ECE515
CS Amplifier with Source Degeneration (contd.)
• Av drops when: VDD  Vin  VT  I D RD M1 goes in triode

Even with all the supposed benefits of this configuration, the

major drawback is the reduced small-signal gain

gm 1 Equivalent Circuit
Av 
vout

gm G  
RD m 1  g R (1/ g )  R
vin 1  g m RS  m S m S Transconductance
For large Vin (while M1 still in RD
 Av  
saturation) → gm is high → RS
RD Gm approaches 1/RS
Av  
 1 
  RS 
Reduced
 m
g  Gain

Ratio of impedances in Linear

the drain and source
path
 ECE315 / ECE515
CS Amplifier with Source Degeneration (contd.)
With channel length modulation and body effect
KCL at output:
I R
I out  g mV1  g mbVx  out S
ro
I R
 I out  gm (Vin  I out RS )  g mb ( I out RS )  out S
ro

KVL at input: Vin  V1  I out RS I out g m ro

 Gm  
Vin RS  1  ( g m  g mb ) RS  ro

Output Resistance
Current through RS is IX Current through ro is:
 V1   I X RS  I ro  I X  ( gm  gmb )V1

KVL at the output: VX  ro  I X  ( gm  gmb ) RS I X   I X RS

VX
 Rout   ro 1  ( g m  g mb ) RS   RS  1  ( gm  gmb )ro  RS  ro
IX
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CS Amplifier with Source Degeneration (contd.)
Usually, ( g m  g mb )ro  1  Rout  ( g m  g mb )ro RS  ro
Output impedance has
increased by this factor
 Rout  1  ( gm  gmb ) RS  ro
Definitely a good prospect for applications
Yes! It comes with a price → requiring higher output impedance
reduced gain
Small-signal gain
Vout g m ro RD
Av   
Vin RD  RS  1  ( g m  g mb ) RS  ro
Rout
gm ro RD RS  1  ( gm  gmb ) RS  ro
Av   . For
RD  RS  1  ( gm  gmb ) RS  ro RS  1  ( gm  gmb ) RS  ro Simplification
Gm
g m ro  RS  1  ( g m  g mb ) RS  ro  RD
Av   . RD||Rout
RS  1  ( g m  g mb ) RS  r RD  RS  1  ( g m  g mb ) RS  ro
 ECE315 / ECE515
Example – 1 KCL at the
• Assuming M1 in saturation, output node:
calculate the small signal vout  vin v v
 g m1vin  out  out  0
voltage gain of the following: RF ro1 RD
1
g m1 
Example – 2 Av 
vout

RF
• Assuming both M1 and M2 in vin 1 1 1
 
saturation, calculate the small RF ro1 RD
signal voltage gain of the
following:
KCL at the  vout  vout
output node: g ( v
m 2 in  vout )     g v
m1 in 
 o2 
r ro1

vout g m1  g m 2
Av  
vin 1 1
gm2  
ro 2 ro1
 ECE315 / ECE515
Example – 3
• Assuming both M1 and M2 in saturation, calculate the small signal voltage
gain of the following:

 
KVL in the mesh created by M2:  g m1vin  vx  RD  vx  vout
 ro1 

𝑽𝑿  v  vx
KCL at this node:   g m 2vx  out   g v
m1 in 
 ro 2  ro1

vout
g m1vin 
 1 v ro 2
vx   g m 2    g m1vin  out  vx  
 ro1  ro 2
gm2 
1
ro1
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Example – 3 (contd.)
 vx   R 
 m1 in
g v   RD  vx  vout g m1RD vin  1  D  vx  vout
 ro1   ro1 

• Simplification of the expressions gives:

vout g m1  g m 2 RD  1
 RD  vout  Av  
 1   m1 in
g v   vin 1 1  R 
g m 2   1  D 
g m1RD vin   o1   v
r ro 2
out ro1 ro 2  r o1 
1
gm2 
ro1
 ECE315 / ECE515
CD Amplifier (Source Follower)
It senses the input at the gate and produces
the output at the source
CS-stage can achieve high voltage gain if
the load impedance is large → if CS-stage
is to be succeeded by a low impedance
circuitry then a buffer is needed → CD-
stage works as a buffer
Let us look at the small-signal voltage gain of CD-stage:
KCL at drain gmV1  g mbVbs 
Vout Vbs  Vout
RS
Vout g m RS
• Simplification gives: Av  
Vin 1  ( g m  g mb ) RS 

KVL at input: Vin  V1  Vout Non-inverting action

Can you derive Av without explicitly using the small signal model ?
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CD Amplifier (Source Follower) – contd. Vout g m RS
Av  
Observations Vin 1  ( g m  g mb ) RS 
• For Vin = VT, the transconductance gm = 0 and
therefore Av = 0.
• Vin increases → ID increases → leads to increase gm 1
Av  
in gm → Av increases and approaches: g m  g mb 1  

η decreases with increase in Vout → leads to increase Even for RS = ∞, the small
in Av → η is typically 0.2 and therefore Av < 1 signal voltage gain Av < 1

Example: gm=2 mS
gmb=0.328 mS
RS=6 kΩ

Calculated Av= 0.801

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CD Amplifier (Source Follower) – contd.
Example (contd.):

Vin, pp=2 mV
Vout, pp=1.596 mV

Simulated: Av  0.798

Av  1 Definitely not an amplifier

• In the best case scenario when RS is extremely

high and body effect is ignored then: Av  1 Usefulness as
buffer
• How can you ignore body effect?
Definitely not for NMOS
By employing a PMOS and with appropriate biasing
 ECE315 / ECE515
CD Amplifier (Source Follower) – contd.
• Furthermore, the strong dependence of Av on the input voltage makes it a
nonlinear configuration → Its due to strong dependence of ID and therefore gm
on the input voltage Vin
Vin = 1mV
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CD Amplifier (Source Follower) – contd.
Vin = 330mV
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CD Amplifier (Source Follower) – contd.
• To mitigate this dependence → resistor RS is replaced by a current source → the
current source is realized using an NMOS operating in saturation mode
1
|| r01 || r02
g mb1
Av 
1 1
|| r01 || r02 
g mb1 g m1
NMOS
Operating in
Current source Saturation
providing high RS

• Let us get back to that example:

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CD Amplifier (Source Follower) – contd.

Vin, pp=2 mV Vout, pp=1.705 mV

Simulated: Av  0.8525
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CD Amplifier (Source Follower) – contd. Vin = 330mV

RS= 6kΩ

RS=Current
Source
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CD Amplifier (Source Follower) – contd.
• Let us look into the small-signal output resistance:
1
Rout 
g m  g mb
V1  VX
Body effect
I X  g mVX  g mbVX  0 reduces the
output
impedance
• If channel length modulation  R  1
ro
g m  g mb Further Reduction in
out
is taken into account then:
output impedance
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CD Amplifier (Source Follower) – contd.
• High input impedance and low output impedance with near unity gain enables CD
stage to work as buffer (not always!) → useful for CS stage specially when the load
impedance is raised very high to enhance the gain
• Reduced output voltage swing when used as buffer for a CS stage
• CD topology is nonlinear → due to body effect and channel length modulation →
also the gain is dependent on gm
• CD topology generates substantial noise → hence not suitable for low noise
applications (beyond this course!!)
 ECE315 / ECE515
Comparison of CD and CS Stages

RL
Av |CD  Av |CS   g m1RL
1
RL 
g m1

• CD is non-inverting whereas CS is inverting

• CS provides higher gain
• For example, if 1/gm1 = RL then the gain provided by the CS stage equals 1
whereas the output of CD stage is 0.5 of the input
 ECE315 / ECE515
Intuitive Analysis - CS Stage

Four possible configurations of common-

source amplifiers with diode-connected loads.
 ECE315 / ECE515
Intuitive Analysis - CS Stage (contd.)

To analyze the gain, begin by

replacing M2 with a resistor
1 𝟏
[Assume ≪ 𝒓𝒐𝟏 ||𝒓𝒐𝟐 ]
𝑔𝑚2 𝒈𝒎𝟐
and replacing M1 with a
current source of 𝑔𝑚1 𝑣𝑖𝑛 .

Ratio of the
1 1 resistance in the
−𝑖𝑑 .
• The small-signal gain of the 𝑔𝑚2 𝑔𝑚2 drain of M1
𝐴𝑣 = =−
CS amplifier is given by 1 1 divided by the
𝑖𝑑 .
𝑔𝑚1 𝑔𝑚1 resistance in the
source of M1
1
Caution: it is assumed that 𝑟𝑜 is much greater than .
𝑔𝑚
 ECE315 / ECE515
Example – 4
Determine the small-signal AC
gain of the following circuit.
𝑣𝑜𝑢𝑡 𝑟𝑒𝑠𝑖𝑠𝑡𝑎𝑛𝑐𝑒 𝑖𝑛 𝑡ℎ𝑒 𝑑𝑟𝑎𝑖𝑛
𝐴𝑣 = =−
𝑣𝑖𝑛 𝑟𝑒𝑖𝑠𝑡𝑎𝑛𝑐𝑒 𝑖𝑛 𝑡ℎ𝑒 𝑠𝑜𝑢𝑟𝑐𝑒

1
resistance in the drain: ||𝑅𝐿
𝑔𝑚2

1
For: 𝑟𝑜1 ||𝑟𝑜2 ≫
𝑔𝑚2
1
resistance in the source: + 𝑅𝑆
𝑔𝑚1

1
𝑣𝑜𝑢𝑡 ||𝑅 𝑅𝐿 → ∞ and 𝑅𝑆 → 0
𝑔𝑚2 𝐿 𝑔𝑚1
𝐴𝑣 = =− 𝐴𝑣 = −
𝑣𝑖𝑛 1 𝑔𝑚2
+ 𝑅𝑆
𝑔𝑚1
 ECE315 / ECE515
Intuitive Analysis - CD Stage

𝑣𝑜𝑢𝑡
𝐴𝑣 =
𝑣𝑖𝑛
𝑟𝑒𝑠𝑖𝑠𝑡𝑎𝑛𝑐𝑒 𝑐𝑜𝑛𝑛𝑒𝑐𝑡𝑒𝑑 𝑡𝑜 𝑡ℎ𝑒 𝑠𝑜𝑢𝑟𝑐𝑒
=
𝑟𝑒𝑠𝑖𝑠𝑡𝑎𝑛𝑐𝑒 𝑐𝑜𝑛𝑛𝑒𝑐𝑡𝑒𝑑 𝑡𝑜 𝑡ℎ𝑒 𝑠𝑜𝑢𝑟𝑐𝑒 + 𝑟𝑒𝑠𝑖𝑠𝑡𝑎𝑛𝑐𝑒 𝑙𝑜𝑜𝑘𝑖𝑛𝑔 𝑖𝑛𝑡𝑜 𝑡ℎ𝑒 𝑠𝑜𝑢𝑟𝑐𝑒
1
𝑔𝑚1
𝐴𝑣 =
1 1 output resistance = ??
+
𝑔𝑚1 𝑔𝑚2