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    Chapter 5

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    deivasigamani
    This chapter discusses the bipolar junction transistor, including its physical structure and operating modes. It covers DC analysis techniques for basic transistor circuits like common emitter, common base, and multistage configurations. Analysis methods involve using equivalent circuits, current relationships, and load lines to determine operating points and voltage transfer characteristics. The chapter also examines applications for digital logic gates and integrated circuit biasing.

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    Chapter 5

    Uploaded by

    deivasigamani
    171 views31 pages
    This chapter discusses the bipolar junction transistor, including its physical structure and operating modes. It covers DC analysis techniques for basic transistor circuits like common emitter, common base, and multistage configurations. Analysis methods involve using equivalent circuits, current relationships, and load lines to determine operating points and voltage transfer characteristics. The chapter also examines applications for digital logic gates and integrated circuit biasing.

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    This chapter discusses the bipolar junction transistor, including its physical structure and operating modes. It covers DC analysis techniques for basic transistor circuits like common emitter, common base, and multistage configurations. Analysis methods involve using equivalent circuits, current relationships, and load lines to determine operating points and voltage transfer characteristics. The chapter also examines applications for digital logic gates and integrated circuit biasing.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    171 views31 pages

    Chapter 5

    Uploaded by

    deivasigamani
    This chapter discusses the bipolar junction transistor, including its physical structure and operating modes. It covers DC analysis techniques for basic transistor circuits like common emitter, common base, and multistage configurations. Analysis methods involve using equivalent circuits, current relationships, and load lines to determine operating points and voltage transfer characteristics. The chapter also examines applications for digital logic gates and integrated circuit biasing.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    of 31

    Microelectronics

    Circuit Analysis and Design

    Donald A. Neamen

    Chapter 5

    The Bipolar Junction Transistor

    Neamen Microelectronics, 4e Chapter 5-1


    McGraw-Hill
    In this chapter, we will:

    Discuss the physical structure and operation of


    the bipolar junction transistor.
    Understand the dc analysis and design
    techniques of bipolar transistor circuits.
    Examine three basic applications of bipolar
    transistor circuits.
    Investigate various dc biasing schemes of bipolar
    transistor circuits, including integrated circuit
    biasing.
    Consider the dc biasing of multistage or multi-
    transistor circuits.

    Neamen Microelectronics, 4e Chapter 5-2


    McGraw-Hill
    Cross Section of Integrated Circuit
    npn Transistor

    Neamen Microelectronics, 4e Chapter 5-3


    McGraw-Hill
    Modes of Operation
    Forward-Active
    B-E junction is forward biased
    B-C junction is reverse biased
    Saturation
    B-E and B-C junctions are forward biased
    Cut-Off
    B-E and B-C junctions are reverse biased
    Inverse-Active (or Reverse-Active)
    B-E junction is reverse biased
    B-C junction is forward biased

    Neamen Microelectronics, 4e Chapter 5-4


    McGraw-Hill
    npn BJT in Forward-Active

    Neamen Microelectronics, 4e Chapter 5-5


    McGraw-Hill
    Electrons and Holes in npn BJT

    Neamen Microelectronics, 4e Chapter 5-6


    McGraw-Hill
    Electrons and Holes in pnp BJT

    Neamen Microelectronics, 4e Chapter 5-7


    McGraw-Hill
    Circuit Symbols and
    Current Conventions

    Neamen Microelectronics, 4e Chapter 5-8


    McGraw-Hill
    Current Relationships

    iE iC iB
    iC iB
    iE (1 iB )
    iC iE


    1
    Neamen Microelectronics, 4e Chapter 5-9
    McGraw-Hill
    Common-Emitter Configurations

    Neamen Microelectronics, 4e Chapter 5-10


    McGraw-Hill
    Common-Base Configuration

    Neamen Microelectronics, 4e Chapter 5-11


    McGraw-Hill
    Current-Voltage Characteristics of a
    Common-Base Circuit

    Neamen Microelectronics, 4e Chapter 5-12


    McGraw-Hill
    Current-Voltage Characteristics of a
    Common-Emitter Circuit

    Neamen Microelectronics, 4e Chapter 5-13


    McGraw-Hill
    Early Voltage/Finite Output
    Resistance

    Neamen Microelectronics, 4e Chapter 5-14


    McGraw-Hill
    Effects of Leakage Currents
    on I-V Characteristics

    Neamen Microelectronics, 4e Chapter 5-15


    McGraw-Hill
    Effect of Collector-Base Breakdown
    on Common Base I-V Characteristics

    Neamen Microelectronics, 4e Chapter 5-16


    McGraw-Hill
    Effect of Collector-Base Breakdown on
    Common Emitter I-V Characteristics

    Neamen Microelectronics, 4e Chapter 5-17


    McGraw-Hill
    DC Equivalent Circuit for
    npn Common Emitter

    Neamen Microelectronics, 4e Chapter 5-18


    McGraw-Hill
    DC Equivalent Circuit for
    pnp Common Emitter

    Neamen Microelectronics, 4e Chapter 5-19


    McGraw-Hill
    Load Line

    Neamen Microelectronics, 4e Chapter 5-20


    McGraw-Hill
    Problem-Solving Technique:
    Bipolar DC Analysis
    1. Assume that the transistor is biased in
    forward active mode
    a. VBE = VBE(on), IB > 0, & IC = IB
    2. Analyze linear circuit.
    3. Evaluate the resulting state of transistor.
    a. If VCE > VCE(sat), assumption is correct
    b. If IB < 0, transistor likely in cutoff
    c. If VCE < 0, transistor likely in saturation
    4. If initial assumption is incorrect, make new
    assumption and return to Step 2.

    Neamen Microelectronics, 4e Chapter 5-21


    McGraw-Hill
    Voltage Transfer Characteristic for
    npn Circuit

    Neamen Microelectronics, 4e Chapter 5-22


    McGraw-Hill
    Voltage Transfer Characteristic for
    pnp Circuit

    Neamen Microelectronics, 4e Chapter 5-23


    McGraw-Hill
    Digital Logic

    Inverter NOR gate

    Neamen Microelectronics, 4e Chapter 5-24


    McGraw-Hill
    Bipolar Inverter as Amplifier

    Neamen Microelectronics, 4e Chapter 5-25


    McGraw-Hill
    Effect of Improper Biasing on
    Amplified Signal Waveform

    Neamen Microelectronics, 4e Chapter 5-26


    McGraw-Hill
    Single Base Resistor Biasing

    Neamen Microelectronics, 4e Chapter 5-27


    McGraw-Hill
    Common Emitter with Voltage
    Divider Biasing and Emitter Resistor

    VTH [ R2 /( R1 R2 )VCC

    Neamen Microelectronics, 4e Chapter 5-28


    McGraw-Hill
    Integrated
    Circuit
    Biasing

    I1
    IC IQ
    2
    1

    Neamen Microelectronics, 4e Chapter 5-29


    McGraw-Hill
    Multistage Cascade Transistor Circuit

    Neamen Microelectronics, 4e Chapter 5-30


    McGraw-Hill
    Multistage Cascode
    Transistor Circuit

    Neamen Microelectronics, 4e Chapter 5-31


    McGraw-Hill

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