Table of Contents

What are diodes made out of?____________________slide 3

N-type material_________________________________slide 4
P-type material_________________________________slide 5
The pn junction_________________________________slides 6-7
The biased pn junction___________________________slides 8-9
Properties of diodes_____________________________slides 10-11
Diode Circuit Models ____________________________slides 12-16
The Q Point____________________________________slides 17-18
Dynamic Resistance_____________________________slides 19-20
Types of diodes and their uses ___________________ slides 21-24
Sources_______________________________________slide 25
 What Are Diodes Made Out Of?

• Silicon (Si) and Germanium (Ge) are the two most Si Si Si

common single elements that are used to make Diodes. +4 +4 +4

A compound that is commonly used is Gallium

Arsenide (GaAs), especially in the case of LEDs Si Si Si
because of it’s large bandgap. +4 +4 +4

• Silicon and Germanium are both group 4 elements,

Si Si Si
meaning they have 4 valence electrons. Their +4 +4 +4
structure allows them to grow in a shape called the
diamond lattice.
• Gallium is a group 3 element while Arsenide is a group The diagram above shows the
5 element. When put together as a compound, GaAs 2D structure of the Si crystal.
The light green lines
creates a zincblend lattice structure.
represent the electronic
• In both the diamond lattice and zincblend lattice, each bonds made when the
atom shares its valence electrons with its four closest valence electrons are shared.
Each Si atom shares one
neighbors. This sharing of electrons is what ultimately
electron with each of its four
allows diodes to be build. When dopants from groups closest neighbors so that its
3 or 5 (in most cases) are added to Si, Ge or GaAs it valence band will have a full 8
changes the properties of the material so we are able to electrons.
make the P- and N-type materials that become the
diode.
 N-Type Material

N-Type Material: When extra valence electrons are introduced

into a material such as silicon an n-type
material is produced. The extra valence
electrons are introduced by putting impurities
+4 +4 +4 or dopants into the silicon. The dopants used
to create an n-type material are Group V
elements. The most commonly used dopants
+4 +5 +4 from Group V are arsenic, antimony and
phosphorus.
The 2D diagram to the left shows the extra
+4 +4 +4 electron that will be present when a Group V
dopant is introduced to a material such as
silicon. This extra electron is very mobile.
 P-Type Material

P-Type Material: P-type material is produced when the dopant

that is introduced is from Group III. Group
III elements have only 3 valence electrons
and therefore there is an electron missing.
+4 +4 +4 This creates a hole (h+), or a positive charge
that can move around in the material.
Commonly used Group III dopants are
+4 +3 +4 aluminum, boron, and gallium.
The 2D diagram to the left shows the hole
that will be present when a Group III dopant
+4 +4 +4 is introduced to a material such as silicon.
This hole is quite mobile in the same way the
extra electron is mobile in a n-type material.
 The PN Junction
Steady State1

Metallurgical
Junction
Na Nd

- - - - - - + + + + +
+
- - - - - -
P - - - - - -
+ + + +
+
+
n
- - - - - - + + + + +
- - - - - - +

+ +
Space Charge + + +
+
ionized Region ionized
acceptors + + + + + donors
+
E-Field
_ _
+ +
h+ drift = h+ diffusion e- diffusion = e- drift
 The PN Junction
Metallurgical
Steady State
Na Junction Nd

- - - - - + + + + +
+ + + + +
P n
- - - - -
+ + + + +
+ + + + +
- - - - -
Space Charge
ionized Region ionized
acceptors - - - - -
donors
E-Field
_ _
+ +
h+ drift h+ diffusion
 The Biased PN Junction
Metal
Contact
“Ohmic
_
Contact” +
(Rs~0)
Applied
P Electric Field n

_
+
Vapplied
The pn junction is considered biased when an external voltage is applied.
There are two types of biasing: Forward bias and Reverse bias.
These are described on then next slide.
 The Biased PN Junction

Forward Bias: In forward bias the depletion region shrinks slightly in

width. With this shrinking the energy required for
charge carriers to cross the depletion region decreases
Vapplied > 0 exponentially. Therefore, as the applied voltage
increases, current starts to flow across the junction.
The barrier potential of the diode is the voltage at
which appreciable current starts to flow through the
diode. The barrier potential varies for different
materials.
Reverse Bias: Under reverse bias the depletion region widens. This
causes the electric field produced by the ions to cancel
out the applied reverse bias voltage. A small leakage
Vapplied < 0 current, Is (saturation current) flows under reverse bias
conditions. This saturation current is made up of
electron-hole pairs being produced in the depletion
region. Saturation current is sometimes referred to as
scale current because of it’s relationship to junction
temperature.
 Properties of Diodes
Figure 1.10 – The Diode Transconductance Curve2
ID (mA) • VD = Bias Voltage
• ID = Current through
Diode. ID is Negative
for Reverse Bias and
Positive for Forward
IS Bias
VBR • IS = Saturation
Current
~V VD
• VBR = Breakdown
Voltage
• V = Barrier Potential
Voltage

(nA)
 Properties of Diodes
The Shockley Equation
• The transconductance curve on the previous slide is characterized by
the following equation:

ID = IS(eVD/VT – 1)
• As described in the last slide, ID is the current through the diode, IS is
the saturation current and VD is the applied biasing voltage.
• VT is the thermal equivalent voltage and is approximately 26 mV at room
temperature. The equation to find VT at various temperatures is:
VT = kT
q
k = 1.38 x 10-23 J/K T = temperature in Kelvin q = 1.6 x 10-19 C
  is the emission coefficient for the diode. It is determined by the way
the diode is constructed. It somewhat varies with diode current. For a
silicon diode  is around 2 for low currents and goes down to about 1 at
higher currents
 Diode Circuit Models
The Ideal Diode The diode is designed to allow current to flow in
Model only one direction. The perfect diode would be a
perfect conductor in one direction (forward bias)
and a perfect insulator in the other direction
(reverse bias). In many situations, using the ideal
diode approximation is acceptable.

Example: Assume the diode in the circuit below is ideal. Determine the
value of ID if a) VA = 5 volts (forward bias) and b) VA = -5 volts (reverse
bias)
RS = 50  a) With VA > 0 the diode is in forward bias
and is acting like a perfect conductor so:
ID ID = VA/RS = 5 V / 50  = 100 mA
+
VA b) With VA < 0 the diode is in reverse bias
_ and is acting like a perfect insulator,
therefore no current can flow and ID = 0.
 Diode Circuit Models
The Ideal Diode with This model is more accurate than the simple
Barrier Potential ideal diode model because it includes the
approximate barrier potential voltage.
+ Remember the barrier potential voltage is the
V voltage at which appreciable current starts to
flow.
Example: To be more accurate than just using the ideal diode model
include the barrier potential. Assume V = 0.3 volts (typical for a
germanium diode) Determine the value of ID if VA = 5 volts (forward bias).

RS = 50 
With VA > 0 the diode is in forward bias
and is acting like a perfect conductor
ID so write a KVL equation to find ID:
+
VA 0 = VA – IDRS - V
_ +
V ID = VA - V = 4.7 V = 94 mA
RS 50 
 Diode Circuit Models
The Ideal Diode This model is the most accurate of the three. It includes a
with Barrier linear forward resistance that is calculated from the slope of
the linear portion of the transconductance curve. However,
Potential and this is usually not necessary since the RF (forward
Linear Forward resistance) value is pretty constant. For low-power
Resistance germanium and silicon diodes the RF value is usually in the
2 to 5 ohms range, while higher power diodes have a RF
value closer to 1 ohm.

+
ID
V RF Linear Portion of
transconductance
curve

RF = VD  ID

I D
VD
V D
 Diode Circuit Models
The Ideal Diode Example: Assume the diode is a low-power diode
with Barrier with a forward resistance value of 5 ohms. The
Potential and barrier potential voltage is still: V = 0.3 volts (typical
Linear Forward for a germanium diode) Determine the value of ID if
Resistance VA = 5 volts.

RS = 50 

Once again, write a KVL equation

ID
for the circuit:
+
VA 0 = VA – IDRS - V - IDRF
_ +
V ID = VA - V = 5 – 0.3 = 85.5 mA
RS + R F 50 + 5
RF
 Diode Circuit Models
Values of ID for the Three Different Diode Circuit Models

Ideal Diode
Ideal Diode
Model with
Model with
Ideal Diode Barrier
Barrier
Model Potential and
Potential
Linear Forward
Voltage
Resistance

ID 100 mA 94 mA 85.5 mA

These are the values found in the examples on previous

slides where the applied voltage was 5 volts, the barrier
potential was 0.3 volts and the linear forward resistance
value was assumed to be 5 ohms.
 The Q Point
The operating point or Q point of the diode is the quiescent or no-
signal condition. The Q point is obtained graphically and is really only
needed when the applied voltage is very close to the diode’s barrier
potential voltage. The example 3 below that is continued on the next
slide, shows how the Q point is determined using the
transconductance curve and the load line.
First the load line is found by substituting in
different values of V into the equation for ID using
RS = 1000  the ideal diode with barrier potential model for the
diode. With RS at 1000 ohms the value of RF
ID wouldn’t have much impact on the results.
+ I D = VA – V 
VA
= 6V _ + RS
V
Using V  values of 0 volts and 1.4 volts we obtain
ID values of 6 mA and 4.6 mA respectively. Next
we will draw the line connecting these two points
on the graph with the transconductance curve.
This line is the load line.
 The Q Point
The
ID (mA) transconductance
curve below is for a
12
Silicon diode. The
Q point in this
10 example is located
at 0.7 V and 5.3 mA.
8
Q Point: The intersection of the
load line and the
6 transconductance curve.
5.3
4.6
4

VD (Volts)
0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.7
 Dynamic Resistance
The dynamic resistance of the diode is mathematically determined
as the inverse of the slope of the transconductance curve.
Therefore, the equation for dynamic resistance is:
rF = VT
ID
The dynamic resistance is used in determining the voltage drop
across the diode in the situation where a voltage source is
supplying a sinusoidal signal with a dc offset.
The ac component of the diode voltage is found using the
following equation:
vF = vac rF
rF + RS
The voltage drop through the diode is a combination of the ac and
dc components and is equal to:
 Dynamic Resistance
Example: Use the same circuit used for the Q point example but
change the voltage source so it is an ac source with a dc offset. The
source voltage is now, vin = 6 + sin(wt) Volts. It is a silicon diode so the
barrier potential voltage is still 0.7 volts.
RS = 1000  The DC component of the circuit is the
same as the previous example and
therefore ID = 6V – 0.7 V = 5.2 mA
ID
1000 
+
rF = VT = 1 * 26 mV = 4.9 
vin +
V ID 5.3 mA
 = 1 is a good approximation if the dc
current is greater than 1 mA as it is in this
example.
vF = vac rF = sin(wt) V 4.9  = 4.88 sin(wt) mV
rF + R S 4.9  + 1000 
Therefore, VD = 700 + 4.9 sin (wt) mV (the voltage drop across the
 Types of Diodes and Their Uses

PN Junction Are used to allow current to flow in one direction

Diodes: while blocking current flow in the opposite
direction. The pn junction diode is the typical diode
that has been used in the previous circuits.

A K P n
Schematic Symbol for a PN Representative Structure for
Junction Diode a PN Junction Diode

Zener Diodes: Are specifically designed to operate under reverse

breakdown conditions. These diodes have a very
accurate and specific reverse breakdown voltage.

A K
Schematic Symbol for a
Zener Diode
 Types of Diodes and Their Uses

Schottky These diodes are designed to have a very fast

Diodes: switching time which makes them a great diode for
digital circuit applications. They are very common
in computers because of their ability to be switched
A K on and off so quickly.
Schematic Symbol for a
Schottky Diode

Shockley The Shockley diode is a four-layer diode while other

Diodes: diodes are normally made with only two layers.
These types of diodes are generally used to control
the average power delivered to a load.

A K
Schematic Symbol for a
four-layer Shockley Diode
 Types of Diodes and Their Uses

Light-Emitting Light-emitting diodes are designed with a very large

Diodes: bandgap so movement of carriers across their
depletion region emits photons of light energy.
Lower bandgap LEDs (Light-Emitting Diodes) emit
infrared radiation, while LEDs with higher bandgap
energy emit visible light. Many stop lights are now
starting to use LEDs because they are extremely
bright and last longer than regular bulbs for a
relatively low cost.

The arrows in the LED

A K representation indicate
emitted light.
Schematic Symbol for a
Light-Emitting Diode
 Types of Diodes and Their Uses

Photodiodes: While LEDs emit light, Photodiodes are sensitive to

received light. They are constructed so their pn
junction can be exposed to the outside through a
clear window or lens.
A K In Photoconductive mode the saturation current
increases in proportion to the intensity of the
received light. This type of diode is used in CD
 players.
A K
In Photovoltaic mode, when the pn junction is
exposed to a certain wavelength of light, the diode
Schematic Symbols for generates voltage and can be used as an energy
Photodiodes
source. This type of diode is used in the
production of solar power.
 Sources
Dailey, Denton. Electronic Devices and Circuits, Discrete and Integrated. Prentice Hall, New
Jersey: 2001. (pp 2-37, 752-753)
2
Figure 1.10. The diode transconductance curve, pg. 7
Figure 1.15. Determination of the average forward resistance of a diode, pg 11
3 Example from pages 13-14
Liou, J.J. and Yuan, J.S. Semiconductor Device Physics and Simulation. Plenum Press,
New York: 1998.
Neamen, Donald. Semiconductor Physics & Devices. Basic Principles. McGraw-Hill,
Boston: 1997. (pp 1-15, 211-234)
1
Figure 6.2. The space charge region, the electric field, and the forces acting on
the charged carriers, pg 213.