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    Chapter 4:ujt: Uni-Junction Transistor G.Venkatasubbaiah Asst., Professor Dept., of ECE Vrsec

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    Sai Rohith
    The uni-junction transistor (UJT) is a three-terminal solid-state device that can be used for timing and triggering applications. It consists of a single N-type semiconductor material forming the main current channel, with two outer connections called the bases (B1 and B2) and a third terminal called the emitter located along the channel. Unlike conventional transistors, a UJT cannot amplify signals but instead acts as a switch. When a voltage is applied between the bases and the emitter voltage exceeds a threshold, the UJT turns on, allowing current to flow in a negative resistance state useful for timing oscillator and pulse generator circuits.

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    Chapter 4:ujt: Uni-Junction Transistor G.Venkatasubbaiah Asst., Professor Dept., of ECE Vrsec

    Uploaded by

    Sai Rohith
    47 views8 pages
    The uni-junction transistor (UJT) is a three-terminal solid-state device that can be used for timing and triggering applications. It consists of a single N-type semiconductor material forming the main current channel, with two outer connections called the bases (B1 and B2) and a third terminal called the emitter located along the channel. Unlike conventional transistors, a UJT cannot amplify signals but instead acts as a switch. When a voltage is applied between the bases and the emitter voltage exceeds a threshold, the UJT turns on, allowing current to flow in a negative resistance state useful for timing oscillator and pulse generator circuits.

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    The uni-junction transistor (UJT) is a three-terminal solid-state device that can be used for timing and triggering applications. It consists of a single N-type semiconductor material forming the main current channel, with two outer connections called the bases (B1 and B2) and a third terminal called the emitter located along the channel. Unlike conventional transistors, a UJT cannot amplify signals but instead acts as a switch. When a voltage is applied between the bases and the emitter voltage exceeds a threshold, the UJT turns on, allowing current to flow in a negative resistance state useful for timing oscillator and pulse generator circuits.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    47 views8 pages

    Chapter 4:ujt: Uni-Junction Transistor G.Venkatasubbaiah Asst., Professor Dept., of ECE Vrsec

    Uploaded by

    Sai Rohith
    The uni-junction transistor (UJT) is a three-terminal solid-state device that can be used for timing and triggering applications. It consists of a single N-type semiconductor material forming the main current channel, with two outer connections called the bases (B1 and B2) and a third terminal called the emitter located along the channel. Unlike conventional transistors, a UJT cannot amplify signals but instead acts as a switch. When a voltage is applied between the bases and the emitter voltage exceeds a threshold, the UJT turns on, allowing current to flow in a negative resistance state useful for timing oscillator and pulse generator circuits.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    of 8

    CHAPTER 4 :UJT

    Uni-Junction Transistor

    G.Venkatasubbaiah
    Asst., Professor
    Dept., of ECE
    VRSEC
    Uni-Junction Transistor Symbol
    The Uni-Junction Transistor is solid state three terminal device
    that can be used in gate pulse, timing circuits and trigger generator
    applications to switch and control either thyristors and triacs for
    AC power control type applications
    Construction
    • The UJT consists of a single solid piece of N-type semiconductor
    material forming the main current carrying channel with its two
    outer connections marked as Base 2(B2) and Base 1(B1). The third
    terminal marked as the Emitter(E) is located along the channel.
    • The emitter terminal is represented by an arrow pointing from the
    P-type emitter to the N-type base.
    • Uni junction Transistor has the name of a transistor, its switching
    characteristics are very different from those of a conventional
    bipolar or field effect transistor as it can not be used to amplify a
    signal but instead is used as a ON-OFF switching transistor.
    • UJT’s have unidirectional conductivity and negative impedance
    characteristics acting more like a variable voltage divider during
    breakdown
    Operation

    Equivalent ckt

    Unijunction Transistor RB1Voltage


    • From the equivalent circuit ,that the N-type channel basically
    consists of two resistors RB2 and RB1 in series with an
    equivalent (ideal) diode, D representing the p-n junction
    connected to their center point. This Emitter p-n junction is
    fixed in position along the ohmic channel during manufacture
    and can therefore not be changed.

    • Resistance RB1is given between the Emitter, E and terminal


    B1, while resistance RB2is given between the Emitter, E and
    terminal B2. As the physical position of the p-n junction is
    closer to terminal B2 than B1 the resistive value of RB2will be
    less than RB1.

    • For a uni junction transistor, the resistive ratio of RB1to RB2


    shown above is called the intrinsic stand-off ratio and is given
    the Greek symbol: η(eta). Typical standard values of η range
    from 0.5 to 0.8 for most common UJT’s
    • When used in a circuit, terminal B1 is connected to
    ground and the Emitter serves as the input to the device.
    Suppose a voltage VBB is applied across the UJT
    between B2 and B1 so that B2 is biased positive
    relative to B1.
    • If a small positive input voltage which is less than the
    voltage developed across resistance, RB1(ηVBB) is
    now applied to the Emitter input terminal, the diode p-n
    junction is reverse biased, thus offering a very high
    impedance and the device does not conduct. The UJT is
    switched “OFF” and zero current flows.
    However, when the Emitter input voltage is increased and
    becomes greater than VRB1(or ηVBB+0.7V, where 0.7V equals
    the p-n junction diode volt drop) the p-n junction becomes
    forward biased and the uni junction transistor begins to conduct.
    The result is that Emitter current, ηIe now flows from the Emitter
    into the Base region.

    The effect of the additional Emitter current flowing into the Base
    reduces the resistive portion of the channel between the Emitter
    junction and the B1terminal. This reduction in the value of
    RB1resistance to a very low value means that the Emitter
    junction becomes even more forward biased resulting in a larger
    current flow. The effect of this results in a negative resistance at
    the Emitter terminal.
    UJT Characteristics

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