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    Lab-2: V-I Characteristics of NMOS and PMOS

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    Darsh Gupta
    This document discusses the V-I characteristics of NMOS and PMOS transistors. It begins by explaining the mode of operation of MOSFETs using a MOS capacitor as an example. It then describes how the enhancement-type NMOS transistor acts as a resistor when the gate-to-source voltage is small. Graphs of output and transfer characteristics are presented to show how drain current varies with drain-source and gate-source voltages. Equations for calculating drain current in triode and saturation regions are provided for long-channel PMOS transistors.

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    Lab-2: V-I Characteristics of NMOS and PMOS

    Uploaded by

    Darsh Gupta
    254 views18 pages
    This document discusses the V-I characteristics of NMOS and PMOS transistors. It begins by explaining the mode of operation of MOSFETs using a MOS capacitor as an example. It then describes how the enhancement-type NMOS transistor acts as a resistor when the gate-to-source voltage is small. Graphs of output and transfer characteristics are presented to show how drain current varies with drain-source and gate-source voltages. Equations for calculating drain current in triode and saturation regions are provided for long-channel PMOS transistors.

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    Lab 2

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    This document discusses the V-I characteristics of NMOS and PMOS transistors. It begins by explaining the mode of operation of MOSFETs using a MOS capacitor as an example. It then describes how the enhancement-type NMOS transistor acts as a resistor when the gate-to-source voltage is small. Graphs of output and transfer characteristics are presented to show how drain current varies with drain-source and gate-source voltages. Equations for calculating drain current in triode and saturation regions are provided for long-channel PMOS transistors.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    254 views18 pages

    Lab-2: V-I Characteristics of NMOS and PMOS

    Uploaded by

    Darsh Gupta
    This document discusses the V-I characteristics of NMOS and PMOS transistors. It begins by explaining the mode of operation of MOSFETs using a MOS capacitor as an example. It then describes how the enhancement-type NMOS transistor acts as a resistor when the gate-to-source voltage is small. Graphs of output and transfer characteristics are presented to show how drain current varies with drain-source and gate-source voltages. Equations for calculating drain current in triode and saturation regions are provided for long-channel PMOS transistors.

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    You are on page 1of 18

    Lab-2: V-I Characteristics of NMOS and PMOS

    1
    VLSI System Design

    Working Principle of MOSFETs

    2
    Outline :- Part 1

    MOSFETs : Mode of Operation


     I/P Characteristic

     O/P Characteristic

     Threshold Voltage

     Modelling Equation for Long channel

    3
    MOS field-Effect Transistors (MOSFETs)

     The Enhancement type NMOS Transistor

    4
    Mode of Operation

    MOS Capacitor

    5
    MOS Capacitor Under Gate-Bias

    p-type semiconductor
    1 2 3

    1. Accumulation :- Pile up of majority charge carrier


    2. Depletion :- Removal of majority charge carrier
    3. Inversion :- Pile up of minority charge carrier
    6
    MOS Capacitor Under Gate-Bias
    n-type semiconductor

    Accumulation
    Positive gate bias
    Electrons attracted to gate
    Pile up of majority charge carrier

    7
    MOS Capacitor Under Gate-Bias
    n-type semiconductor

    Depletion Inversion
    8
    MOS field-Effect Transistors (MOSFETs)

     The Enhancement type NMOS Transistor

     With Small

     Acts as a Resistor

    9
    MOS field-Effect Transistors (MOSFETs)
     Effect of gate to source voltage on MOSFET

     With Small

     Acts as a linear Resistor

     Resistor Controlled by

    10
    MOS field-Effect Transistors (MOSFETs)
     Effect of drain to source voltage
    𝑉 𝐺𝑆 >𝑉 𝑡 (Constant )
     Increased
     Resistance increases with

     Tapered induced channel

    11
    MOS field-Effect Transistors (MOSFETs)
     The Drain current versus the drain-to-source voltage

    S
    Triode Saturation
    Curve bends because
    channel resistance
    increases with
    Current Saturate because
    C
    the channel is pinched off
    at the drain end
    Almost a straight line
    with slope Proportional
    to

    12
    MOS field-Effect Transistors (MOSFETs)
     Circuit symbol for the N-channel MOSFET

    (a) (b) (c)

    13
    MOS field-Effect Transistors (MOSFETs)
     Output characteristics of MOSFET

    14
    MOS field-Effect Transistors (MOSFETs)

     Transfer Characteristics of MOSFET

    15
    MOS field-Effect Transistors (MOSFETs)

     Transfer Characteristics of MOSFET

    16
    17
    PMOS I-V Equations

    • For |VDS| < |VD,sat|:


    W  VDS 
    I D ,tri   p Cox
    L (VGS  VTH )  2 VDS 1   VDS  VD ,sat 
     

    • For |VDS| > |VD,sat|:


    1 W
    I D ,sat   pCox VGS  VTH  1   VDS  VD,sat 
    2
    for long channel
    2 L
    or
    I D ,sat  vsatWCox (VGS  VTH )1   VDS  VD ,sat  for short channel
    18

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