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    2.4.3.2 Drain-Induced Barrier Lowering: Chapter 2 MOS Transistor Theory

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    Carlos Saavedra
    1) The document discusses MOS transistor theory and leakage in transistors. It provides equations for threshold voltage (Vt) that account for substrate doping concentration and channel length. 2) It describes two effects that lower the threshold voltage: drain-induced barrier lowering (DIBL), which increases with drain voltage; and short channel effect, where threshold voltage decreases with decreasing channel length. 3) Three main types of leakage currents in transistors are discussed: subthreshold conduction between source and drain, gate leakage through the thin gate dielectric, and junction leakage through the source/drain and body p-n junctions.

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    2.4.3.2 Drain-Induced Barrier Lowering: Chapter 2 MOS Transistor Theory

    Uploaded by

    Carlos Saavedra
    13 views1 page
    1) The document discusses MOS transistor theory and leakage in transistors. It provides equations for threshold voltage (Vt) that account for substrate doping concentration and channel length. 2) It describes two effects that lower the threshold voltage: drain-induced barrier lowering (DIBL), which increases with drain voltage; and short channel effect, where threshold voltage decreases with decreasing channel length. 3) Three main types of leakage currents in transistors are discussed: subthreshold conduction between source and drain, gate leakage through the thin gate dielectric, and junction leakage through the source/drain and body p-n junctions.

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    CMOS-VLSI-design-107

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    1) The document discusses MOS transistor theory and leakage in transistors. It provides equations for threshold voltage (Vt) that account for substrate doping concentration and channel length. 2) It describes two effects that lower the threshold voltage: drain-induced barrier lowering (DIBL), which increases with drain voltage; and short channel effect, where threshold voltage decreases with decreasing channel length. 3) Three main types of leakage currents in transistors are discussed: subthreshold conduction between source and drain, gate leakage through the thin gate dielectric, and junction leakage through the source/drain and body p-n junctions.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    13 views1 page

    2.4.3.2 Drain-Induced Barrier Lowering: Chapter 2 MOS Transistor Theory

    Uploaded by

    Carlos Saavedra
    1) The document discusses MOS transistor theory and leakage in transistors. It provides equations for threshold voltage (Vt) that account for substrate doping concentration and channel length. 2) It describes two effects that lower the threshold voltage: drain-induced barrier lowering (DIBL), which increases with drain voltage; and short channel effect, where threshold voltage decreases with decreasing channel length. 3) Three main types of leakage currents in transistors are discussed: subthreshold conduction between source and drain, gate leakage through the thin gate dielectric, and junction leakage through the source/drain and body p-n junctions.

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    of 1

    80 Chapter 2 MOS Transistor Theory

    8 × 1017 cm 3
    Ks = 2 ( 0.026 V ) ln = 0.93 V
    1.45 × 1010 cm 3

    L=
    10.5 × 10 8 cm
    F
    3.9 × 8.85 × 10 14 cm
    ( )( )(
    F
    2 1.6 × 10 19 C 11.7 × 8.85 × 10 14 cm )
    8 × 1017 cm 3 = 0.16 (2.40)

    Vt = 0.3 + L ( )
    Ks + 0.6 V  Ks = 0.34 V

    2.4.3.2 Drain-Induced Barrier Lowering The drain voltage Vds creates an electric field that
    affects the threshold voltage. This drain-induced barrier lowering (DIBL) effect is espe-
    cially pronounced in short-channel transistors. It can be modeled as

    Vt = Vt 0  MVds (2.41)

    where M is the DIBL coefficient, typically on the order of 0.1 (often expressed as 100 mV/V).
    Drain-induced barrier lowering causes Ids to increase with Vds in saturation, in much
    the same way as channel length modulation does. This effect can be lumped into a smaller
    Early voltage VA used in EQ (2.34). Again, this is a bane for analog design but insignifi-
    cant for most digital circuits. More significantly, DIBL increases subthreshold leakage at
    high Vds, as we will discuss in Section 2.4.4.

    2.4.3.3 Short Channel Effect The threshold voltage typically increases with channel
    length. This phenomenon is especially pronounced for small L where the source and drain
    depletion regions extend into a significant portion of the channel, and hence is called the
    short channel effect 8 or Vt rolloff [Tsividis99, Cheng99]. In some processes, a reverse short
    channel effect causes Vt to decrease with length.
    There is also a narrow channel effect in which Vt varies with channel width; this effect
    tends to be less significant because the minimum width is greater than the minimum
    length.

    Source Gate Drain


    2.4.4 Leakage
    Even when transistors are nominally OFF, they leak small amounts of current. Leakage
    Igate mechanisms include subthreshold conduction between source and drain, gate leakage
    from the gate to body, and junction leakage from source to body and drain to body, as
    n+ Isub n+
    illustrated in Figure 2.19 [Roy03, Narendra06]. Subthreshold conduction is caused by
    Ijunct
    bulk Si thermal emission of carriers over the potential barrier set by the threshold. Gate leakage is
    a quantum-mechanical effect caused by tunneling through the extremely thin gate dielec-
    tric. Junction leakage is caused by current through the p-n junction between the
    Body source/drain diffusions and the body.
    FIGURE 2.19
    Leakage current paths
    8
    The term short-channel effect is overused in the CMOS literature. Sometimes, it refers to any behavior out-
    side the long-channel models. Other times, it refers to a range of behaviors including DIBL that are most
    significant for very short channel lengths [Muller03]. In this text, we restrict the term to describe the sen-
    sitivity of threshold voltage to channel length.

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