Showing 1–37 of 37 results for author: Granozio, F M

Signatures of a surface spin-orbital chiral metal

Authors: Federico Mazzola, Wojciech Brzezicki, Maria Teresa Mercaldo, Anita Guarino, Chiara Bigi, Jill A. Miwa, Domenico De Fazio, Alberto Crepaldi, Jun Fujii, Giorgio Rossi, Pasquale Orgiani, Sandeep Kumar Chaluvadi, Shyni Punathum Chalil, Giancarlo Panaccione, Anupam Jana, Vincent Polewczyk, Ivana Vobornik, Changyoung Kim, Fabio Miletto Granozio, Rosalba Fittipaldi, Carmine Ortix, Mario Cuoco, Antonio Vecchione

Abstract: The relation between crystal symmetries, electron correlations, and electronic structure steers the formation of a large array of unconventional phases of matter, including magneto-electric loop currents and chiral magnetism. Detection of such hidden orders is a major goal in condensed matter physics. However, to date, nonstandard forms of magnetism with chiral electronic ordering have been experi… ▽ More The relation between crystal symmetries, electron correlations, and electronic structure steers the formation of a large array of unconventional phases of matter, including magneto-electric loop currents and chiral magnetism. Detection of such hidden orders is a major goal in condensed matter physics. However, to date, nonstandard forms of magnetism with chiral electronic ordering have been experimentally elusive. Here, we develop a theory for symmetry-broken chiral ground states and propose a methodology based on circularly polarized spin-selective angular-resolved photoelectron spectroscopy to probe them. We exploit the archetypal quantum material Sr2RuO4 and reveal spectroscopic signatures which, even though subtle, may be reconciled with the formation of spin-orbital chiral currents at the material surface. As we shed light on these chiral regimes, our findings pave the way for a deeper understanding of ordering phenomena and unconventional magnetism. △ Less

Submitted 13 February, 2024; originally announced February 2024.

Pattern Formation by Electric-field Quench in Mott Crystal

Authors: Nicolas Gauquelin, Filomena Forte, Daen Jannis, Rosalba Fittipaldi, Carmine Autieri, Giuseppe Cuono, Veronica Granata, Mariateresa Lettieri, Canio Noce, Fabio Miletto Granozio, Antonio Vecchione, Johan Verbeeck, Mario Cuoco

Abstract: The control of Mott phase is intertwined with the spatial reorganization of the electronic states. Out-of-equilibrium driving forces typically lead to electronic patterns that are absent at equilibrium, whose nature is however often elusive. Here, we unveil a nanoscale pattern formation in the Ca$_2$RuO$_4$ Mott insulator. We demonstrate how an applied electric field spatially reconstructs the ins… ▽ More The control of Mott phase is intertwined with the spatial reorganization of the electronic states. Out-of-equilibrium driving forces typically lead to electronic patterns that are absent at equilibrium, whose nature is however often elusive. Here, we unveil a nanoscale pattern formation in the Ca$_2$RuO$_4$ Mott insulator. We demonstrate how an applied electric field spatially reconstructs the insulating phase that, uniquely after switching off the electric field, exhibits nanoscale stripe domains. The stripe pattern has regions with inequivalent octahedral distortions that we directly observe through high-resolution scanning transmission electron microscopy. The nanotexture depends on the orientation of the electric field, it is non-volatile and rewritable. We theoretically simulate the charge and orbital reconstruction induced by a quench dynamics of the applied electric field providing clear-cut mechanisms for the stripe phase formation. Our results open the path for the design of non-volatile electronics based on voltage-controlled nanometric phases. △ Less

Submitted 31 May, 2023; originally announced May 2023.

Comments: 14 pages, 9 figures

Orbital selective switching of ferromagnetism in an oxide quasi two-dimensional electron gas

Authors: R. Di Capua, M. Verma, M. Radovic, V. N. Strocov, C. Piamonteze, E. B. Guedes, N. Plumb, Yu Chen, M. D'Antuono, G. M. De Luca, E. Di Gennaro, D. Stornaiuolo, D. Preziosi, B. Jouault, F. Miletto Granozio, A. Sambri, R. Pentcheva, G. Ghiringhelli, M. Salluzzo

Abstract: Multi-orbital physics in quasi-two-dimensional electron gases (q2DEGs) triggers unique phenomena not observed in bulk materials, such as unconventional superconductivity and magnetism. Here, we investigate the mechanism of orbital selective switching of the spin-polarization in the oxide q2DEG formed at the (001) interface between the LaAlO$_{3}$, EuTiO$_{3}$ and SrTiO$_{3}$ band insulators. By us… ▽ More Multi-orbital physics in quasi-two-dimensional electron gases (q2DEGs) triggers unique phenomena not observed in bulk materials, such as unconventional superconductivity and magnetism. Here, we investigate the mechanism of orbital selective switching of the spin-polarization in the oxide q2DEG formed at the (001) interface between the LaAlO$_{3}$, EuTiO$_{3}$ and SrTiO$_{3}$ band insulators. By using density functional theory calculations, transport, magnetic and x-ray spectroscopy measurements, we find that the filling of titanium-bands with 3d$_{xz,yz}$ orbital character in the EuTiO3 layer and at the interface with SrTiO$_{3}$ induces an antiferromagnetic to ferromagnetic switching of the exchange interaction between Eu-4f$^{7}$ magnetic moments. The results explain the observation of the carrier density dependent ferromagnetic correlations and anomalous Hall effect in this q2DEG, and demonstrate how combined theoretical and experimental approaches can lead to a deeper understanding of novel electronic phases and serve as a guide for the materials design for advanced electronic applications. △ Less

Submitted 13 September, 2021; originally announced September 2021.

Self-formed $LaAlO_3/SrTiO_3$ Micro-Membranes

Authors: Alessia Sambri, Mario Scuderi, Anita Guarino, Emiliano Di Gennaro, Ricci Erlandsen, Rasmus T. Dahm, Anders V. Bjørlig, Dennis V. Christensen, Roberto Di Capua, Bartolomeo Della Ventura, Umberto Scotti di Uccio, Salvatore Mirabella, Giuseppe Nicotra, Corrado Spinella, Thomas S. Jespersen, Fabio Miletto Granozio

Abstract: Oxide heterostructures represent a unique playground for triggering the emergence of novel electronic states and for implementing new device concepts. The discovery of 2D conductivity at the $LaAlO_3/SrTiO_3$ interface has been linking for over a decade two of the major current research fields in Materials Science: correlated transition-metal-oxide systems and low-dimensional systems. A full mergi… ▽ More Oxide heterostructures represent a unique playground for triggering the emergence of novel electronic states and for implementing new device concepts. The discovery of 2D conductivity at the $LaAlO_3/SrTiO_3$ interface has been linking for over a decade two of the major current research fields in Materials Science: correlated transition-metal-oxide systems and low-dimensional systems. A full merging of these two fields requires nevertheless the realization of $LaAlO_3/SrTiO_3$ heterostructures in the form of freestanding membranes. Here we show a completely new method for obtaining oxide hetero-membranes with micrometer lateral dimensions. Unlike traditional thin-film-based techniques developed for semiconductors and recently extended to oxides, the concept we demonstrate does not rely on any sacrificial layer and is based instead on pure strain engineering. We monitor through both real-time and post-deposition analyses, performed at different stages of growth, the strain relaxation mechanism leading to the spontaneous formation of curved hetero-membranes. Detailed transmission electron microscopy investigations show that the membranes are fully epitaxial and that their curvature results in a huge strain gradient, each of the layers showing a mixed compressive/tensile strain state. Electronic devices are fabricated by realizing ad hoc circuits for individual micro-membranes transferred on silicon chips. Our samples exhibit metallic conductivity and electrostatic field effect similar to 2D-electron systems in bulk heterostructures. Our results open a new path for adding oxide functionality into semiconductor electronics, potentially allowing for ultra-low voltage gating of a superconducting transistors, micromechanical control of the 2D electron gas mediated by ferroelectricity and flexoelectricity, and on-chip straintronics. △ Less

Submitted 17 September, 2020; v1 submitted 15 September, 2020; originally announced September 2020.

Comments: 8 pages, 4 figures

Journal ref: First published: 11 September 2020 on Advanced Functional Materials

On the problem of comparing Covid-19 fatality rates

Authors: Fabio Miletto Granozio

Abstract: Understanding Covid-19 lethality and its variation from country to country is essential for supporting governments in the choice of appropriate strategies. Adopting correct indicators to monitor the lethality of the infection in the course of the outbreak is a crucial issue. This works highlights how far the time-dependent case fatality rate is a misleading indicator for estimating the fatality in… ▽ More Understanding Covid-19 lethality and its variation from country to country is essential for supporting governments in the choice of appropriate strategies. Adopting correct indicators to monitor the lethality of the infection in the course of the outbreak is a crucial issue. This works highlights how far the time-dependent case fatality rate is a misleading indicator for estimating the fatality in the course of the outbreak, even if our attention is only restricted to the subset of confirmed cases. Our analysis proves that the final case fatality ratio for several major European countries is bound to largely exceed 10%. The largely discussed difference in the fatality ratio between Italy and other major European countries, is to be mostly attributed (except for the case of Germany) to the more advanced stage of the Italian epidemic. △ Less

Submitted 6 April, 2020; originally announced April 2020.

Comments: three pages, one table, three figures

Comparative analysis of the diffusion of Covid-19 infection in different countries

Authors: Fabio Miletto Granozio

Abstract: The sudden spread of Covid-19 outside China has pushed on March 11 the World Health Organization to acknowledge the ongoing outbreak as a pandemic. It is crucial in this phase to understand what should countries which presently lag behind in the spread of the infection learn from countries where the infection spread earlier. The choice of this work is to prefer timeliness to comprehensiveness. By… ▽ More The sudden spread of Covid-19 outside China has pushed on March 11 the World Health Organization to acknowledge the ongoing outbreak as a pandemic. It is crucial in this phase to understand what should countries which presently lag behind in the spread of the infection learn from countries where the infection spread earlier. The choice of this work is to prefer timeliness to comprehensiveness. By adopting a purely empirical approach, we will limit ourselves to identifying different phases in the plots of different countries, based on their different functional behaviour, and to make a comparative analysis. The comparative analysis of the registered cases curves highlights remarkable similarities, especially among Western countries, together with some minor but crucial differences. We highlight how timeliness can largely reduce the size of the individual national outbreaks, ultimately limiting the final death toll. Our data suggest that Western governments have not unfortunately shown the capability to anticipate their decisions, based on the experience of countries hit earlier by the outbreak. △ Less

Submitted 18 March, 2020; originally announced March 2020.

Comments: 5 pages, four figures (total 9 panels=

Electronic phase separation at LaAlO3/SrTiO3 interfaces tunable by oxygen deficiency

Authors: V. N. Strocov, A. Chikina, M. Caputo, M. -A. Husanu, F. Bisti, D. Bracher, T. Schmitt, F. Miletto Granozio, C. A. F. Vaz, F. Lechermann

Abstract: Electronic phase separation is crucial for the fascinating macroscopic properties of the LaAlO3/SrTiO3 (LAO/STO) paradigm oxide interface, including the coexistence of superconductivity and ferromagnetism. We investigate this phenomenon using angle-resolved photoelectron spectroscopy (ARPES) in the soft-X-ray energy range, where the enhanced probing depth combined with resonant photoexcitation all… ▽ More Electronic phase separation is crucial for the fascinating macroscopic properties of the LaAlO3/SrTiO3 (LAO/STO) paradigm oxide interface, including the coexistence of superconductivity and ferromagnetism. We investigate this phenomenon using angle-resolved photoelectron spectroscopy (ARPES) in the soft-X-ray energy range, where the enhanced probing depth combined with resonant photoexcitation allow access to fundamental electronic structure characteristics (momentum-resolved spectral function, dispersions and ordering of energy bands, Fermi surface) of buried interfaces. Our experiment uses X-ray irradiation of the LAO/STO interface to tune its oxygen deficiency, building up a dichotomic system where mobile weakly correlated Ti t2g-electrons co-exist with localized strongly correlated Ti eg-ones. The ARPES spectra dynamics under X-ray irradiation shows a gradual intensity increase under constant Luttinger count of the Fermi surface. This fact identifies electronic phase separation (EPS) where the mobile electrons accumulate in conducting puddles with fixed electronic structure embedded in an insulating host phase, and allows us to estimate the lateral fraction of these puddles. We discuss the physics of EPS invoking a theoretical picture of oxygen-vacancy clustering, promoted by the magnetism of the localized Ti eg-electrons, and repelling of the mobile t2g-electrons from these clusters. Our results on the irradiation-tuned EPS elucidate the intrinsic one taking place at the stoichiometric LAO/STO interfaces. △ Less

Submitted 17 August, 2019; originally announced August 2019.

Comments: In review with Phys. Rev. Materials

Journal ref: Phys. Rev. Materials 3, 106001 (2019)

Transient quantum isolation and critical behavior in the magnetization dynamics of half-metallic manganites

Authors: Tommaso Pincelli, Riccardo Cucini, Adriano Verna, Francesco Borgatti, Masaki Oura, Kenji Tamasaku, Tien-lin Lee, Christoph Schlueter, Stefan Günther, Christian Horst Back, Martina Dell'Angela, Roberta Ciprian, Pasquale Orgiani, Aleksandr Petrov, Fausto Sirotti, Valentin Dediu, Ilaria Bergenti, Patrizio Graziosi, Fabio Miletto Granozio, Yoshihito Tanaka, Munetaka Taguchi, Hiroshi Daimon, Jun Fujii, Giorgio Rossi, Giancarlo Panaccione

Abstract: We combine time resolved pump-probe Magneto-Optical Kerr Effect and Photoelectron Spectroscopy experiments supported by theoretical analysis to determine the relaxation dynamics of delocalized electrons in half-metallic ferromagnetic manganite $La_{1-x}Sr_{x}MnO_{3}$. We observe that the half-metallic character of $La_{1-x}Sr_{x}MnO_{3}$ determines the timescale of both the electronic phase transi… ▽ More We combine time resolved pump-probe Magneto-Optical Kerr Effect and Photoelectron Spectroscopy experiments supported by theoretical analysis to determine the relaxation dynamics of delocalized electrons in half-metallic ferromagnetic manganite $La_{1-x}Sr_{x}MnO_{3}$. We observe that the half-metallic character of $La_{1-x}Sr_{x}MnO_{3}$ determines the timescale of both the electronic phase transition and the quenching of magnetization, revealing a quantum isolation of the spin system in double exchange ferromagnets extending up to hundreds of picoseconds. We demonstrate the use of time-resolved hard X-ray photoelectron spectroscopy (TR-HAXPES) as a unique tool to single out the evolution of strongly correlated electronic states across a second-order phase transition in a complex material. △ Less

Submitted 1 June, 2019; originally announced June 2019.

Comments: Article 25 pages, 6 figures

Journal ref: Phys. Rev. B 100, 045118 (2019)

Symmetry breaking at the (111) interfaces of SrTiO${_3}$ hosting a 2D-electron system

Authors: G. M. De Luca, R. Di Capua, E. Di Gennaro, A. Sambri, F. Miletto Granozio, G. Ghiringhelli, D. Betto, C. Piamonteze, N. B. Brookes, M. Salluzzo

Abstract: We used x-ray absorption spectroscopy to study the orbital symmetry and the energy band splitting of (111) LaAlO${_3}$/SrTiO${_3}$ and LaAlO${_3}$/EuTiO${_3}$/SrTiO${_3}$ heterostructures, hosting a quasi two-dimensional electron system (q2DES), and of a Ti-terminated (111) SrTiO${_3}$ single crystal, also known to form a q2DES at its surface. We demonstrate that the bulk tetragonal Ti-3d D${_4}$… ▽ More We used x-ray absorption spectroscopy to study the orbital symmetry and the energy band splitting of (111) LaAlO${_3}$/SrTiO${_3}$ and LaAlO${_3}$/EuTiO${_3}$/SrTiO${_3}$ heterostructures, hosting a quasi two-dimensional electron system (q2DES), and of a Ti-terminated (111) SrTiO${_3}$ single crystal, also known to form a q2DES at its surface. We demonstrate that the bulk tetragonal Ti-3d D${_4}$${_h}$ crystal field is turned into trigonal D${_3}$${_d}$ crystal field in all cases. The symmetry adapted a${_1}$${_g}$ and e${^π_g}$ orbitals are non-degenerate in energy and their splitting, Δ, is positive at the bare STO surface but negative in the heterostructures, where the a${_1}$${_g}$ orbital is lowest in energy. These results demonstrate that the interfacial symmetry breaking induced by epitaxial engineering of oxide interfaces has a dramatic effect on their electronic properties, and it can be used to manipulate the ground state of the q2DES. △ Less

Submitted 10 September, 2018; v1 submitted 27 June, 2018; originally announced June 2018.

Comments: 6 pages article, plus 5 pages supplementary information

Journal ref: Phys. Rev. B 98, 115143 (2018)

Infrared study of the quasi-two-dimensional electron system at the interface between SrTiO$_{3}$ and crystalline or amorphous LaAlO$_3$

Authors: A. Nucara, M. Corasaniti, A. Kalaboukhov, M. Ortolani, E. Falsetti, A. Sambri, F. Miletto Granozio, F. Capitani, J. -B. Brubach, P. Roy, U. Schade, P. Calvani

Abstract: We have used grazing-angle infrared spectroscopy to detect the Berreman effect (BE) in the quasi-two-dimensional electron system (q-2DES) which forms spontaneously at the interface between SrTiO$_{3}$ (STO) and a thin film of LaAlO$_3$ (LAO). From the BE, which allows one to study longitudinal optical excitations in ultrathin films like the q-2DES, we have extracted at different temperatures its t… ▽ More We have used grazing-angle infrared spectroscopy to detect the Berreman effect (BE) in the quasi-two-dimensional electron system (q-2DES) which forms spontaneously at the interface between SrTiO$_{3}$ (STO) and a thin film of LaAlO$_3$ (LAO). From the BE, which allows one to study longitudinal optical excitations in ultrathin films like the q-2DES, we have extracted at different temperatures its thickness, the charge density and mobility of the carriers under crystalline LAO (sample A), and the charge density under amorphous LAO (sample B). This quantity turns out to be higher than in sample A, but a comparison with Hall measurements shows that under amorphous LAO the charges are partly localized at low $T$ with a low activation energy (about 190 K in $k_B$ units), and are thermally activated according to a model for large polarons. The thickness of the q-2DES extracted from our spectra turns out to be 4 $\pm 1$ nm for crystalline LAO, 7 $\pm 2$ nm for amorphous LAO. △ Less

Submitted 22 February, 2018; originally announced February 2018.

Comments: 21 pages, 7 figures

Journal ref: Phys. Rev. B 97, 155126 (2018)

Ultrafast Modification of the Polarity at LaAlO$_3$/SrTiO$_3$ Interfaces

Authors: Andrea Rubano, Tim Günter, Manfred Fiebig, Fabio Miletto Granozio, Lorenzo Marrucci, Domenico Paparo

Abstract: Oxide growth with semiconductor-like accuracy has led to atomically precise thin films and interfaces that exhibit a plethora of phases and functionalities not found in the oxide bulk material. This yielded spectacular discoveries such as the conducting, magnetic or even superconducting LaAlO$_3$/SrTiO$_3$ interfaces separating two prototypical insulating perovskite materials. All these investigat… ▽ More Oxide growth with semiconductor-like accuracy has led to atomically precise thin films and interfaces that exhibit a plethora of phases and functionalities not found in the oxide bulk material. This yielded spectacular discoveries such as the conducting, magnetic or even superconducting LaAlO$_3$/SrTiO$_3$ interfaces separating two prototypical insulating perovskite materials. All these investigations, however, consider the static state at the interface, although studies on fast oxide interface dynamics would introduce a powerful degree of freedom to understanding the nature of the LaAlO$_3$/SrTiO$_3$ interface state. Here we show that the polarization state at the LaAlO$_3$/SrTiO$_3$ interface can be optically enhanced or attenuated within picoseconds. Our observations are explained by a model based on charge propagation effects in the interfacial vicinity and transient polarization buildup at the interface. △ Less

Submitted 1 August, 2017; originally announced August 2017.

Journal ref: Phys. Rev. B 97, 035438 (2018)

Non-volatile, reversible metal-insulator transition in oxide interfaces controlled by gate voltage and light

Authors: Mian Akif Safeen, Musa Mutlu Can, Amit Khare, Emiliano Di Gennaro, Alessia Sambri, Antonio Leo, Nicola. Scopigno, Umberto Scotti di Uccio, Fabio Miletto Granozio

Abstract: The field-effect-induced modulation of transport properties of 2-dimensional electron gases residing at the LaAlO$_3$/SrTiO$_3$ and LaGaO$_3$/SrTiO$_3$ interfaces has been investigated in a back-gate configuration. Both samples with crystalline and with amorphous overlayers have been considered. We show that the "naïve" standard scenario, in which the back electrode and the 2-dimensional electron… ▽ More The field-effect-induced modulation of transport properties of 2-dimensional electron gases residing at the LaAlO$_3$/SrTiO$_3$ and LaGaO$_3$/SrTiO$_3$ interfaces has been investigated in a back-gate configuration. Both samples with crystalline and with amorphous overlayers have been considered. We show that the "naïve" standard scenario, in which the back electrode and the 2-dimensional electron gas are simply modeled as capacitor plates, dramatically fails in describing the observed phenomenology. Anomalies appearing after the first low-temperature application of a positive gate bias, and causing a non-volatile perturbation of sample properties, are observed in all our samples. Such anomalies are shown to drive low-carrier density samples to a persistent insulating state. Recovery of the pristine metallic state can be either obtained by a long room-temperature field annealing, or, instantaneously, by a relatively modest dose of visible-range photons. Illumination causes a sudden collapse of the electron system back to the metallic ground state, with a resistivity drop exceeding four orders of magnitude. The data are discussed and interpreted on the base of the analogy with floating-gate MOSFET devices, which sheds a new light on the effects of back-gating on oxide-based 2-dimensional electron gases. A more formal approach, allowing for a semi-quantitative estimate of the relevant surface carrier densities for different samples and under different back-gate voltages, is proposed in the Appendix. △ Less

Submitted 13 January, 2017; originally announced January 2017.

Comments: 12 pages, 8 figures, submitted to PRX

Octahedral rotation patterns in strained EuFeO3 and other Pbnm perovskite films: Implications for hybrid improper ferroelectricity

Authors: A. K. Choquette, C. R. Smith, R. J. Sichel-Tissot, E. J. Moon, M. D. Scafetta, E. Di Gennaro, F. Miletto Granozio, E. Karapetrova, S. J. May

Abstract: We report the relationship between epitaxial strain and the crystallographic orientation of the in-phase rotation axis and A-site displacements in Pbnm-type perovskite films. Synchrotron diffraction measurements of EuFeO3 films under strain states ranging from 2% compressive to 0.9% tensile on cubic or rhombohedral substrates exhibit a combination of a-a+c- and a+a-c- rotational patterns. We compa… ▽ More We report the relationship between epitaxial strain and the crystallographic orientation of the in-phase rotation axis and A-site displacements in Pbnm-type perovskite films. Synchrotron diffraction measurements of EuFeO3 films under strain states ranging from 2% compressive to 0.9% tensile on cubic or rhombohedral substrates exhibit a combination of a-a+c- and a+a-c- rotational patterns. We compare the EuFeO3 behavior with previously reported experimental and theoretical work on strained Pbnm-type films on non-orthorhombic substrates, as well as additional measurements from LaGaO3, LaFeO3, and Eu0.7Sr0.3MnO3 films on SrTiO3. Compiling the results from various material systems reveals a general strain dependence in which compressive strain strongly favors a-a+c- and a+a-c- rotation patterns and tensile strain weakly favors a-a-c+ structures. In contrast, EuFeO3 films grown on Pbnm-type GdScO3 under 2.3% tensile strain take on a uniform a-a+c- rotation pattern imprinted from the substrate, despite strain energy considerations that favor the a-a-c+ pattern. These results point to the use of substrate imprinting as a more robust route than strain for tuning the crystallographic orientations of the octahedral rotations and A-site displacements needed to realize rotation-induced hybrid improper ferroelectricity in oxide heterostructures. △ Less

Submitted 9 June, 2016; originally announced June 2016.

Comments: submitted to PRB, comments welcomed

Journal ref: Phys. Rev. B 94, 024105 (2016)

Transport in strongly-coupled graphene-LaAlO3/SrTiO3 hybrid systems

Authors: I. Aliaj, I. Torre, V. Miseikis, E. di Gennaro, A. Sambri, A. Gamucci, C. Coletti, F. Beltram, F. M. Granozio, M. Polini, V. Pellegrini, S. Roddaro

Abstract: We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep two-dimensional electron system. At low graphene-oxide inter-layer bias the two electron systems are electrically isolated, despite their small spatial separation, and very efficient reciprocal gating is shown. A pronounced rectifying behavior is observed fo… ▽ More We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep two-dimensional electron system. At low graphene-oxide inter-layer bias the two electron systems are electrically isolated, despite their small spatial separation, and very efficient reciprocal gating is shown. A pronounced rectifying behavior is observed for larger bias values and ascribed to the interplay between electrostatic depletion and tunneling across the LaAlO3 barrier. The relevance of these results in the context of strongly-coupled bilayer systems is discussed. △ Less

Submitted 24 February, 2016; originally announced February 2016.

Comments: 10 pages, 3 figures

Journal ref: APL Mater. 4, 066101 (2016)

Nanopatterning process based on epitaxial masking for the fabrication of electronic and spintronic devices made of La0.67Sr0.33MnO3/LaAlO3/SrTiO3 heterostructures with in situ interfaces

Authors: Francesca Telesio, Luca Pellegrino, Ilaria Pallecchi, Daniele Marré, Emanuela Esposito, Emiliano di Gennaro, Amit Khare, Fabio Miletto Granozio

Abstract: The fabrication of oxide electronics devices is presently hindered by the lack of standardized and well established patterning procedures, applicable down to the nanoscale. In this work, the authors propose a procedure to obtain patterns with resolution around 100 nm on (La,Sr)MnO3/LaAlO3/SrTiO3 heterostructures. Our method is based on a multistep technique, which includes wet and dry etching, epi… ▽ More The fabrication of oxide electronics devices is presently hindered by the lack of standardized and well established patterning procedures, applicable down to the nanoscale. In this work, the authors propose a procedure to obtain patterns with resolution around 100 nm on (La,Sr)MnO3/LaAlO3/SrTiO3 heterostructures. Our method is based on a multistep technique, which includes wet and dry etching, epitaxial masking, and e-beam lithography. Our procedure is devised to define independent patterns on the interfacial two dimensional electron gas and on the metallic top electrode, while preserving an all-in situ approach for the heterostructure growth. The authors show results on nano-scale devices based on (La,Sr)MnO3/LaAlO3/SrTiO3, suitable for oxide spintronics applications. △ Less

Submitted 12 February, 2016; originally announced February 2016.

Journal ref: Journal of Vacuum Science & Technology B 34, 011208 (2016)

Photoresponse dynamics in amorphous-LaAlO$_{3}$/SrTiO$_{3}$ interfaces

Authors: Emiliano Di Gennaro, Ubaldo Coscia, Giuseppina Ambrosone, Amit Khare, Fabio Miletto Granozio, Umberto Scotti di Uccio

Abstract: The time-resolved photoconductance of amorphous and crystalline LaAlO$_3$/SrTiO$_3$ interfaces, both hosting an interfacial 2-dimensional electron gas, is investigated under irradiation by variable-wavelengths, visible or ultraviolet photons. Unlike bare SrTiO$_3$ single crystals, showing relatively small photoconductance effects, both kinds of interfaces exhibit an intense and highly persistent p… ▽ More The time-resolved photoconductance of amorphous and crystalline LaAlO$_3$/SrTiO$_3$ interfaces, both hosting an interfacial 2-dimensional electron gas, is investigated under irradiation by variable-wavelengths, visible or ultraviolet photons. Unlike bare SrTiO$_3$ single crystals, showing relatively small photoconductance effects, both kinds of interfaces exhibit an intense and highly persistent photoconductance with extraordinarily long characteristic times. The temporal behaviour of the extra photoinduced conductance persisting after light irradiation shows a complex dependence on interface type (whether amorphous or crystalline), sample history and irradiation wavelength. \textcolor{black}{The experimental results indicate that different mechanisms of photoexcitation are responsible for the photoconductance of crystalline and amorphous LaAlO$_3$/SrTiO$_3$ interfaces under visible light. We propose that the response of crystalline samples is mainly due to the promotion of electrons from the valence bands of both SrTiO$_3$ and LaAlO$_3$. This second channel is less relevant in amorphous LaAlO$_3$/SrTiO$_3$, where the higher density of point defects plays instead a major role. △ Less

Submitted 14 January, 2015; originally announced January 2015.

Comments: 8 pages, 5 figures, 3 tables, accepted on Scientific Reports 2015

Journal ref: Scientific Reports 5, 8393 (11 February 2015)

Growth and characterization of conducting LaAlO3/EuTiO3/SrTiO3 het-erostructures

Authors: G. M. De Luca, R. Di Capua, E. Di Gennaro, F. Miletto Granozio, M. Salluzzo, A. Gadaleta, I. Pallecchi, D. Marrè, C. Piamonteze, M. Radovic, Z. Ristic, S. Rusponi

Abstract: We studied the structural, magnetic and transport properties of LaAlO3/EuTiO3/SrTiO3 heterostructures grown by Pulsed Laser Deposition. The samples have been characterized in-situ by electron diffraction and scanning probe mi-croscopy and ex-situ by transport measurements and x-ray absorption spectroscopy. LaAlO3/EuTiO3/SrTiO3 films show a ferromagnetic transition at T<7.5 K, related to the orderi… ▽ More We studied the structural, magnetic and transport properties of LaAlO3/EuTiO3/SrTiO3 heterostructures grown by Pulsed Laser Deposition. The samples have been characterized in-situ by electron diffraction and scanning probe mi-croscopy and ex-situ by transport measurements and x-ray absorption spectroscopy. LaAlO3/EuTiO3/SrTiO3 films show a ferromagnetic transition at T<7.5 K, related to the ordering of Eu2+ spins, even in samples characterized by just two EuTiO3 unit cells. A finite metallic conductivity is observed only in the case of samples composed by one or two EuTiO3 unit cells and, simultaneously, by a LaAlO3 thickness equal or above 4 unit cells. The role of ferromagnetic EuTiO3 on the transport properties of delta-doped LaAlO3/EuTiO3/SrTiO3 is critically discussed. △ Less

Submitted 1 March, 2014; originally announced March 2014.

Observation of strontium segregation in LaAlO$_{3}$/SrTiO$_{3}$ and NdGaO$_{3}$/SrTiO$_{3}$ oxide heterostructures by X-ray photoemission spectroscopy

Authors: Uwe Treske, Nadine Heming, Stefan Krause, Martin Knupfer, Bernd Büchner, Emiliano Di Gennaro, Umberto Scotti di Uccio, Fabio Miletto Granozio, Andreas Koitzsch

Abstract: LaAlO$_{3}$ and NdGaO$_{3}$ thin films of different thickness have been grown by pulsed laser deposition on TiO$_2$-terminated SrTiO$_{3}$ single crystals and investigated by soft X-ray photoemission spectroscopy. The surface sensitivity of the measurements has been tuned by varying photon energy $hν$ and emission angle $Θ$. In contrast to the core levels of the other elements, the Sr $3d$ line sh… ▽ More LaAlO$_{3}$ and NdGaO$_{3}$ thin films of different thickness have been grown by pulsed laser deposition on TiO$_2$-terminated SrTiO$_{3}$ single crystals and investigated by soft X-ray photoemission spectroscopy. The surface sensitivity of the measurements has been tuned by varying photon energy $hν$ and emission angle $Θ$. In contrast to the core levels of the other elements, the Sr $3d$ line shows an unexpected splitting for higher surface sensitivity, signaling the presence of a second strontium component. From our quantitative analysis we conclude that during the growth process Sr atoms diffuse away from the substrate and segregate at the surface of the heterostructure, possibly forming strontium oxide. △ Less

Submitted 31 January, 2014; originally announced January 2014.

Journal ref: APL Mat. 2, 012108 (2014)

Carrier-number fluctuations in the 2-dimensional electron gas at the LaAlO3/SrTiO3 interface

Authors: C. Barone, F. Romeo, S. Pagano, E. Di Gennaro, F. Miletto Granozio, I. Pallecchi, D. Marre, U. Scotti di Uccio

Abstract: The voltage-spectral density SV(f) of the 2-dimensional electron gas formed at the interface of LaAlO3 /SrTiO3 has been thoroughly investigated. The low-frequency component has a clear 1/f behavior with a quadratic bias current dependence, attributed to resistance fluctuations. However, its temperature dependence is inconsistent with the classical Hooge model, based on carrier-mobility fluctuation… ▽ More The voltage-spectral density SV(f) of the 2-dimensional electron gas formed at the interface of LaAlO3 /SrTiO3 has been thoroughly investigated. The low-frequency component has a clear 1/f behavior with a quadratic bias current dependence, attributed to resistance fluctuations. However, its temperature dependence is inconsistent with the classical Hooge model, based on carrier-mobility fluctuations. The experimental results are, instead, explained in terms of carrier-number fluctuations, due to an excitation-trapping mechanism of the 2-dimensional electron gas. △ Less

Submitted 8 December, 2013; originally announced December 2013.

Comments: 4 pages, 4 figures

Journal ref: Appl. Phys. Lett. 103, 231601 (2013)

Persistent photoconductivity in 2-dimensional electron gases at different oxide interfaces

Authors: Emiliano Di Gennaro, Umberto Scotti di Uccio, Carmela Aruta, Claudia Cantoni, Alessandro Gadaleta, Andrew R. Lupini, Davide Maccariello, Daniele Marré, Ilaria Pallecchi, Domenico Paparo, Paolo Perna, Muhammad Riaz, Fabio Miletto Granozio

Abstract: We report on the transport characterization in dark and under light irradiation of three different interfaces: LaAlO3/SrTiO3, LaGaO3/SrTiO3, and the novel NdGaO3/SrTiO3 heterostructure. All of them share a perovskite structure, an insulating nature of the single building blocks, a polar/non- polar character and a critical thickness of four unit cells for the onset of conductivity. The interface st… ▽ More We report on the transport characterization in dark and under light irradiation of three different interfaces: LaAlO3/SrTiO3, LaGaO3/SrTiO3, and the novel NdGaO3/SrTiO3 heterostructure. All of them share a perovskite structure, an insulating nature of the single building blocks, a polar/non- polar character and a critical thickness of four unit cells for the onset of conductivity. The interface structure and charge confinement in NdGaO3/SrTiO3 are probed by atomic-scale- resolved electron energy loss spectroscopy showing that, similarly to LaAlO3/SrTiO3, extra electronic charge confined in a sheet of about 1.5 nm in thickness is present at the NdGaO3/SrTiO3 interface. Electric transport measurements performed in dark and under radiation show remarkable similarities and provide evidence that the persistent perturbation induced by light is an intrinsic peculiar property of the three investigated oxide-based polar/non-polar interfaces. Our work sets a framework for understanding the previous contrasting results found in literature about photoconductivity in LaAlO3/SrTiO3 and highlights the connection between the origin of persistent photoconductivity and the origin of conductivity itself. An improved understanding of the photo- induced metastable electron-hole pairs might allow to shed a direct light on the complex physics of this system and on the recently proposed perspectives of oxide interfaces for solar energy conversion. △ Less

Submitted 22 February, 2014; v1 submitted 12 September, 2013; originally announced September 2013.

Comments: 11 pages, 7 figures

Journal ref: Advanced Optical Materials, Volume 1, Issue 11, pages 834-843, November 2013

Reversible and Persistent Photoconductivity at the NdGaO3/SrTiO3 Conducting Interface

Authors: Umberto Scotti di Uccio, Carmela Aruta, Claudia Cantoni, Emiliano Di Gennaro, Alessandro Gadaleta, Andrew R. Lupini, Davide Maccariello, Daniele Marré, Ilaria Pallecchi, Domenico Paparo, Paolo Perna, Muhammad Riaz, Fabio Miletto Granozio

Abstract: The interface between the band gap insulators LaAlO3 and SrTiO3 is known to host a highly mobile two-dimensional electron gas. Here we report on the fabrication and characterization of the NdGaO3/SrTiO3 interface, that shares with LaAlO3/SrTiO3 an all-perovskite structure, the insulating nature of the single building block and the polar-non polar character. Our work demonstrates that in NdGaO3/SrT… ▽ More The interface between the band gap insulators LaAlO3 and SrTiO3 is known to host a highly mobile two-dimensional electron gas. Here we report on the fabrication and characterization of the NdGaO3/SrTiO3 interface, that shares with LaAlO3/SrTiO3 an all-perovskite structure, the insulating nature of the single building block and the polar-non polar character. Our work demonstrates that in NdGaO3/SrTiO3 a metallic layer of mobile electrons is formed, with properties comparable to LaAlO3/SrTiO3. The localization of the injected electrons at the Ti sites, within a few unit cells from the interface, was proved by Atomic-scale-resolved EELS analyses. The electric transport and photoconduction of samples were also investigated. We found that irradiation by photons below the SrTiO3 gap does not increase the carrier density, but slightly enhances low temperature mobility. A giant persistent photoconductivity effect was instead observed, even under irradiation by low energy photons, in highly resistive samples fabricated at non-optimal conditions. We discuss the results in the light of different mechanisms proposed for the two-dimensional electron gas formation. Both the ordinary and the persistent photoconductivity in these systems are addressed and analyzed. △ Less

Submitted 22 June, 2012; originally announced June 2012.

Comments: 24 pages, 7 figures, submitted to ACS Nano

Electron transfer and ionic displacements at the origin of the 2D electron gas at the LAO/STO interface: Direct measurements with atomic-column spatial resolution

Authors: C. Cantoni, J. Gazquez, F. Miletto Granozio, M. P. Oxley, M. Varela, A. R. Lupini, S. J. Pennycook, C. Aruta, U. Scotti di Uccio, P. Perna, D. Maccariello

Abstract: The discovery that the interface between two band gap insulators LaAlO3 and SrTiO3 is highly conducting has raised an enormous interest in the field of oxide electronics. The LAlO3/SrTiO3 interface can be tuned using an electric field and switched from a superconducting to an insulating state. Conducting paths in an insulating background can be written applying a voltage with the tip of an atomic… ▽ More The discovery that the interface between two band gap insulators LaAlO3 and SrTiO3 is highly conducting has raised an enormous interest in the field of oxide electronics. The LAlO3/SrTiO3 interface can be tuned using an electric field and switched from a superconducting to an insulating state. Conducting paths in an insulating background can be written applying a voltage with the tip of an atomic force microscope, creating great promise for the development of a new generation of nanoscale electronic devices. However, the mechanism for interface conductivity in LaAlO3/SrTiO3 has remained elusive. The theoretical explanation based on an intrinsic charge transfer (electronic reconstruction) has been strongly challenged by alternative descriptions based on point defects. In this work, thanks to modern aberration-corrected electron probes with atomic-scale spatial resolution, interfacial charge and atomic displacements originating the electric field within the system can be simultaneously measured, yielding unprecedented experimental evidence in favor of an intrinsic electronic reconstruction. △ Less

Submitted 20 June, 2012; originally announced June 2012.

Comments: Accepted for publication in Advanced Materials. Published online on 06/20/2012

Journal ref: Advanced Materials 24, 3952 (2012)

Observation of a two-dimensional electron gas at the surface of annealed SrTiO3 single crystals by scanning tunneling spectroscopy

Authors: R. Di Capua, M. Radovic, G. M. De Luca, I. Maggio-Aprile, F. Miletto Granozio, N. C. Plumb, Z. Ristic, U. Scotti di Uccio, R. Vaglio, M. Salluzzo

Abstract: Scanning tunneling spectroscopy suggests the formation of a two dimensional electron gas (2DEG) on the TiO2 terminated surface of undoped SrTiO3 single crystals annealed at temperature lower than 400 °C in ultra high vacuum conditions. Low energy electron diffraction indicates that the 2D metallic SrTiO3 surface is not structurally reconstructed, suggesting that non-ordered oxygen vacancies create… ▽ More Scanning tunneling spectroscopy suggests the formation of a two dimensional electron gas (2DEG) on the TiO2 terminated surface of undoped SrTiO3 single crystals annealed at temperature lower than 400 °C in ultra high vacuum conditions. Low energy electron diffraction indicates that the 2D metallic SrTiO3 surface is not structurally reconstructed, suggesting that non-ordered oxygen vacancies created in the annealing process introduce carriers leading to an electronic reconstruction. The experimental results are interpreted in a frame of competition between oxygen diffusion from the bulk to the surface and oxygen loss from the surface itself. △ Less

Submitted 3 February, 2012; originally announced February 2012.

Comments: 9 pages, 3 figures, submitted to Physical Review B

Critical influence of target-to-substrate distance on conductive properties of LaGaO3/SrTiO3 interfaces deposited at 10-1 mbar oxygen pressure

Authors: Carmela Aruta, Salvarore Amoruso, Giovanni Ausanio, Riccardo Bruzzese, Emiliano Di Gennaro, Marco Lanzano, Fabio Miletto Granozio, Muhammad Riaz, Alessia Sambri, Umberto Scotti di Uccio, Xuan Wang

Abstract: We investigate pulsed laser deposition of LaGaO3/SrTiO3 at 10-1 mbar oxygen background pressure, demonstrating the critical effect of the target-to-substrate distance, dTS, on the interface sheet resistance, Rs. The interface turns from insulating to metallic by progressively decreasing dTS. The analysis of the LaGaO3 plume evidences the important role of the plume propagation dynamics on the inte… ▽ More We investigate pulsed laser deposition of LaGaO3/SrTiO3 at 10-1 mbar oxygen background pressure, demonstrating the critical effect of the target-to-substrate distance, dTS, on the interface sheet resistance, Rs. The interface turns from insulating to metallic by progressively decreasing dTS. The analysis of the LaGaO3 plume evidences the important role of the plume propagation dynamics on the interface properties. These results demonstrate the growth of conducting interfaces at an oxygen pressure of 10-1 mbar, an experimental condition where a well-oxygenated heterostructures with a reduced content of oxygen defects is expected. △ Less

Submitted 6 April, 2012; v1 submitted 2 January, 2012; originally announced January 2012.

Comments: 16 pages, 3 figures

Journal ref: Applied Physics Letters 101, 031602 (2012)

In-situ Investigation of the Early Stage of TiO2 epitaxy on (001) SrTiO3

Authors: M. Radovic, M. Salluzzo, Z. Ristic, R. Di Capua, N. Lampis, R. Vaglio, F. Miletto Granozio

Abstract: We report on a systematic study of the growth of epitaxial TiO2 films deposited by pulsed laser deposition on Ti-terminated (001) SrTiO3 single crystals. By using in-situ reflection high energy electron diffraction, low energy electron diffraction, x-ray photoemission spectroscopy and scanning probe microscopy, we show that the stabilization of the anatase (001) phase is preceded by the growth of… ▽ More We report on a systematic study of the growth of epitaxial TiO2 films deposited by pulsed laser deposition on Ti-terminated (001) SrTiO3 single crystals. By using in-situ reflection high energy electron diffraction, low energy electron diffraction, x-ray photoemission spectroscopy and scanning probe microscopy, we show that the stabilization of the anatase (001) phase is preceded by the growth of a pseudomorphic Sr-Ti-O intermediate layer, with a thickness between 2 and 4 nm. The data demonstrate that the formation of this phase is related to the activation of long range Sr migration from the substrate to the film. The role of interface Gibbs energy minimization, as a driving force for Sr diffusion, is discussed. Our results enrich the phase diagram of the Sr-Ti-O system under epitaxial strain opening the roudeficient SrTiO phase. △ Less

Submitted 10 March, 2011; originally announced March 2011.

Comments: 8 pages, 7 figures

Revealing the ortho-II Band Folding in YBa2Cu3O7-delta Films

Authors: Y. Sassa, M. Radovic, M. Månsson, E. Razzoli, X. Y. Cui, S. Pailh\mues, S. Guerrero, M. Shi, P. R. Willmott, F. Miletto Granozio, J. Mesot, M. R. Norman, L. Patthey

Abstract: We present an angle-resolved photoelectron spectroscopy study of YBa2Cu3O7-delta films in situ grown by pulsed laser deposition. We have successfully produced underdoped surfaces with ordered oxygen vacancies within the CuO chains resulting in a clear ortho-II band folding of the Fermi surface. This indicates that order within the CuO chains affects the electronic properties of the CuO2 planes. Ou… ▽ More We present an angle-resolved photoelectron spectroscopy study of YBa2Cu3O7-delta films in situ grown by pulsed laser deposition. We have successfully produced underdoped surfaces with ordered oxygen vacancies within the CuO chains resulting in a clear ortho-II band folding of the Fermi surface. This indicates that order within the CuO chains affects the electronic properties of the CuO2 planes. Our results highlight the importance of having not only the correct surface carrier concentration, but also a very well ordered and clean surface in order that photoemission data on this compound be representative of the bulk. △ Less

Submitted 12 March, 2011; v1 submitted 28 January, 2011; originally announced January 2011.

Comments: Accepted in Physical Review B, Rapid Communication

Journal ref: Physical Review B 83, 140511(R) (2011)

Pulsed laser deposition of SrTiO3/LaGaO3 and SrTiO3/LaAlO3: plasma plume effects

Authors: C. Aruta, S. Amoruso, R. Bruzzese, X. Wang, D. Maccariello, F. Miletto Granozio, U. Scotti di Uccio

Abstract: Pulsed laser deposition of SrTiO3/LaGaO3 and SrTiO3/LaAlO3 interfaces has been analyzed with a focus on the kinetic energy of the ablated species. LaGaO3 and LaAlO3 plasma plumes were studied by fast photography and space-resolved optical emission spectroscopy. Reflection high energy electron diffraction was performed proving a layer-by-layer growth up to 10-1 mbar oxygen pressure. The role of the… ▽ More Pulsed laser deposition of SrTiO3/LaGaO3 and SrTiO3/LaAlO3 interfaces has been analyzed with a focus on the kinetic energy of the ablated species. LaGaO3 and LaAlO3 plasma plumes were studied by fast photography and space-resolved optical emission spectroscopy. Reflection high energy electron diffraction was performed proving a layer-by-layer growth up to 10-1 mbar oxygen pressure. The role of the energetic plasma plume on the two-dimensional growth and the presence of interfacial defects at different oxygen growth pressure has been discussed in view of the conducting properties developing at such polar/non-polar interfaces. △ Less

Submitted 2 October, 2010; originally announced October 2010.

Journal ref: Appl. Phys. Lett. 97 (2010) 252105

Energy and symmetry of $dd$ excitations in undoped layered cuprates measured by Cu $L_3$ resonant inelastic x-ray scattering

Authors: M. Moretti Sala, V. Bisogni, C. Aruta, G. Balestrino, H. Berger, N. B. Brookes, G. M. de Luca, D. Di. Castro, M. Grioni, M. Guarise, P. G. Medaglia, F. Miletto Granozio, M. Minola, P. Perna, M. Radovic, M. Salluzzo, T. Schmitt, K. J. Zhou, L. Braicovich, G. Ghiringhelli

Abstract: We measured high resolution Cu $L_3$ edge resonant inelastic x-ray scattering (RIXS) of the undoped cuprates La$_2$CuO$_4$, Sr$_2$CuO$_2$Cl$_2$, CaCuO$_2$ and NdBa$_2$Cu$_3$O$_6$. The dominant spectral features were assigned to $dd$ excitations and we extensively studied their polarization and scattering geometry dependence. In a pure ionic picture, we calculated the theoretical cross sections for… ▽ More We measured high resolution Cu $L_3$ edge resonant inelastic x-ray scattering (RIXS) of the undoped cuprates La$_2$CuO$_4$, Sr$_2$CuO$_2$Cl$_2$, CaCuO$_2$ and NdBa$_2$Cu$_3$O$_6$. The dominant spectral features were assigned to $dd$ excitations and we extensively studied their polarization and scattering geometry dependence. In a pure ionic picture, we calculated the theoretical cross sections for those excitations and used them to fit the experimental data with excellent agreement. By doing so, we were able to determine the energy and symmetry of Cu-3$d$ states for the four systems with unprecedented accuracy and confidence. The values of the effective parameters could be obtained for the single ion crystal field model but not for a simple two-dimensional cluster model. The firm experimental assessment of $dd$ excitation energies carries important consequences for the physics of high $T_c$ superconductors. On one hand, having found that the minimum energy of orbital excitation is always $\geq 1.4$ eV, i.e., well above the mid-infrared spectral range, leaves to magnetic excitations (up to 300 meV) a major role in Cooper pairing in cuprates. On the other hand, it has become possible to study quantitatively the effective influence of $dd$ excitations on the superconducting gap in cuprates. △ Less

Submitted 17 November, 2010; v1 submitted 24 September, 2010; originally announced September 2010.

Comments: 22 pages, 11 figures, 1 table

Journal ref: New J. Phys. 13 (2011) 043026

Magnetic properties of pseudomorphic epitaxial films of Pr_{0.7}Ca_{0.3}MnO_3 under different biaxial tensile stresses

Authors: A. Geddo Lehmann, F. Congiu, N. Lampis, F. Miletto Granozio, P. Perna, M. Radovic, U. Scotti di Uccio

Abstract: In order to analyse the effect of strain on the magnetic properties of narrow-band manganites, the temperature and field dependent susceptibilities of about 8.5 nm thick epitaxial Pr0.7Ca0.3MnO3 films, respectively grown on (001) and (110) SrTiO3 substrates, have been compared. For ultrathin samples grown on (001) SrTiO3, a bulk-like cluster-glass magnetic behaviour is found, indicative of the pos… ▽ More In order to analyse the effect of strain on the magnetic properties of narrow-band manganites, the temperature and field dependent susceptibilities of about 8.5 nm thick epitaxial Pr0.7Ca0.3MnO3 films, respectively grown on (001) and (110) SrTiO3 substrates, have been compared. For ultrathin samples grown on (001) SrTiO3, a bulk-like cluster-glass magnetic behaviour is found, indicative of the possible coexistence of antiferromagnetic and ferromagnetic phases. On the contrary, ultrathin films grown on (110) substrates show a robust ferromagnetism, with a strong spontaneous magnetization of about 3.4 mB /Mn atom along the easy axis. On the base of high resolution reciprocal space mapping analyses performed by x-ray diffraction, the different behaviours are discussed in terms of the crystallographic constraints imposed by the epitaxy of Pr0.7Ca0.3MnO3 on SrTiO3. We suggest that for growth on (110) SrTiO3, the tensile strain on the film c-axis, lying within the substrate plane, favours the ferromagnetic phase, possibly by allowing a mixed occupancy and hybridization of both in-plane and out-of-plane eg orbitals. Our data allow to shed some physics of inhomogeneous states in manganites and on the nature of their ferromagnetic insulating state. △ Less

Submitted 19 July, 2010; originally announced July 2010.

Comments: 9 pages, 9 figures

Journal ref: Phys. Rev. B 82, 014415 (2010)

Conducting interfaces between band insulating oxides: the LaGaO3/SrTiO3

Authors: Paolo Perna, Davide Maccariello, Milan Radovic, Umberto Scotti di Uccio, Ilaria Pallecchi, Marta Codda, Daniele Marré, Claudia Cantoni, Jaume Gazquez, Maria Varela, Steve Pennycook, Fabio Miletto Granozio

Abstract: We show that the growth of the heterostructure LaGaO3/SrTiO3 yields the formation of a highly conductive interface. Our samples were carefully analyzed by high resolution electron microscopy, in order to assess their crystal perfection and to evaluate the abruptness of the interface. Their carrier density and sheet resistance are compared to the case of LaAlO3/SrTiO3 and a superconducting transiti… ▽ More We show that the growth of the heterostructure LaGaO3/SrTiO3 yields the formation of a highly conductive interface. Our samples were carefully analyzed by high resolution electron microscopy, in order to assess their crystal perfection and to evaluate the abruptness of the interface. Their carrier density and sheet resistance are compared to the case of LaAlO3/SrTiO3 and a superconducting transition is found. The results open the route to widening the field of polar-non polar interfaces, pose some phenomenological constrains to their underlying physics and highlight the chance of tailoring their properties for future applications by adopting suitable polar materials. △ Less

Submitted 1 October, 2010; v1 submitted 22 January, 2010; originally announced January 2010.

Comments: in press Appl. Phys. Lett. 97, 1 (2010)

Journal ref: APPLIED PHYSICS LETTERS 97, 152111 (2010)

Charge density waves enhance the electronic noise of manganites

Authors: C. Barone, A. Galdi, N. Lampis, L. Maritato, F. Miletto Granozio, S. Pagano, P. Perna, M. Radovic, U. Scotti di Uccio

Abstract: The transport and noise properties of Pr_{0.7}Ca_{0.3}MnO_{3} epitaxial thin films in the temperature range from room temperature to 160 K are reported. It is shown that both the broadband 1/f noise properties and the dependence of resistance on electric field are consistent with the idea of a collective electrical transport, as in the classical model of sliding charge density waves. On the othe… ▽ More The transport and noise properties of Pr_{0.7}Ca_{0.3}MnO_{3} epitaxial thin films in the temperature range from room temperature to 160 K are reported. It is shown that both the broadband 1/f noise properties and the dependence of resistance on electric field are consistent with the idea of a collective electrical transport, as in the classical model of sliding charge density waves. On the other hand, the observations cannot be reconciled with standard models of charge ordering and charge melting. Methodologically, it is proposed to consider noise-spectra analysis as a unique tool for the identification of the transport mechanism in such highly correlated systems. On the basis of the results, the electrical transport is envisaged as one of the most effective ways to understand the nature of the insulating, charge-modulated ground states in manganites. △ Less

Submitted 30 July, 2009; originally announced July 2009.

Comments: 6 two-column pages, 5 figures

Journal ref: Phys. Rev. B 80, 115128 (2009)

Polar catastrophe and electronic reconstructions at the LaAlO3/SrTiO3 interface: evidence from optical second harmonic generation

Authors: A. Savoia, D. Paparo, P. Perna, Z. Ristic, M. Salluzzo, F. Miletto Granozio, U. Scotti di Uccio, C. Richter, S. Thiel, J. Mannhart, L. Marrucci

Abstract: The so-called "polar catastrophe", a sudden electronic reconstruction taking place to compensate for the interfacial ionic polar discontinuity, is currently considered as a likely factor to explain the surprising conductivity of the interface between the insulators LaAlO3 and SrTiO3. We applied optical second harmonic generation, a technique that a priori can detect both mobile and localized int… ▽ More The so-called "polar catastrophe", a sudden electronic reconstruction taking place to compensate for the interfacial ionic polar discontinuity, is currently considered as a likely factor to explain the surprising conductivity of the interface between the insulators LaAlO3 and SrTiO3. We applied optical second harmonic generation, a technique that a priori can detect both mobile and localized interfacial electrons, to investigating the electronic polar reconstructions taking place at the interface. As the LaAlO3 film thickness is increased, we identify two abrupt electronic rearrangements: the first takes place at a thickness of 3 unit cells, in the insulating state; the second occurs at a thickness of 4-6 unit cells, i.e., just above the threshold for which the samples become conducting. Two possible physical scenarios behind these observations are proposed. The first is based on an electronic transfer into localized electronic states at the interface that acts as a precursor of the conductivity onset. In the second scenario, the signal variations are attributed to the strong ionic relaxations taking place in the LaAlO3 layer. △ Less

Submitted 4 September, 2009; v1 submitted 21 January, 2009; originally announced January 2009.

Journal ref: Phys. Rev. B 80, 075110 (2009)

Dispersing bimagnons and doping induced bimagnon-charge modes in superconducting cuprates

Authors: L. Braicovich, L. J. P. Ament, V. Bisogni, F. Forte, C. Aruta, G. Balestrino, N. B. Brookes, G. M. De Luca, P. G. Medaglia, F. Miletto Granozio, M. Radovic, M. Salluzzo, J. van den Brink, G. Ghiringhelli

Abstract: In the early days of high temperature superconductivity it was already recognized that magnetic properties of these materials are intimately related to the superconducting ones . When doped, the long-range ordered antiferromagnetic background of pristine copper-oxide insulators melts away and makes room for a spin liquid and superconductivity. By resonant inelastic x-ray scattering (RIXS) in the… ▽ More In the early days of high temperature superconductivity it was already recognized that magnetic properties of these materials are intimately related to the superconducting ones . When doped, the long-range ordered antiferromagnetic background of pristine copper-oxide insulators melts away and makes room for a spin liquid and superconductivity. By resonant inelastic x-ray scattering (RIXS) in the soft regime we probe the hitherto inaccessible dynamical multiple-spin correlations of the magnetic background in a series of parent compounds and in high Tc materials [NCCO (Nd2-xCexCuO4) and LSCO (La2-xSrxCuO4)]. High resolution measurements allows the clear observation of dispersing bimagnon excitations. In the undoped compounds the theory, fits the data on these coherent spin excitations without free parameters. In nearly optimally doped LSCO we observe the appearance of a new collective excitation at an energy of 250 +/- 60 meV having the signature of a coupled bimagnon-charge mode. It has a strongly reduced dispersion and lies in a so far unexplored region of momentum and energy space in the mid-infrared. △ Less

Submitted 8 July, 2008; originally announced July 2008.

Comments: 16 pages, 3 figures embedded

Time-resolved photoluminescence of n-doped SrTiO_3

Authors: A. Rubano, D. Paparo, M. Radovic, A. Sambri, F. Miletto Granozio, U. Scotti di Uccio, L. Marrucci

Abstract: Following the recent surge of interest in n-doped strontium titanate as a possible blue light emitter, a time-resolved photoluminescence analysis was performed on nominally pure, Nb-doped and oxygen-deficient single-crystal SrTiO3 samples. The doping-effects on both the electronic states involved in the transition and the decay mechanism are respectively analyzed by comparing the spectral and dy… ▽ More Following the recent surge of interest in n-doped strontium titanate as a possible blue light emitter, a time-resolved photoluminescence analysis was performed on nominally pure, Nb-doped and oxygen-deficient single-crystal SrTiO3 samples. The doping-effects on both the electronic states involved in the transition and the decay mechanism are respectively analyzed by comparing the spectral and dynamic features and the yields of the emission. Our time-resolved analysis, besides shedding some light on the basic recombination mechanisms acting in these materials, sets the intrinsic bandwidth limit of the proposed blue light emitting optoelectronic devices made of Ti-based perovskites heterostructures in the GHz range. △ Less

Submitted 20 February, 2008; originally announced February 2008.

Journal ref: Appl. Phys. Lett. 92, 021102 (2008)

Recombination kinetics of a dense electron-hole plasma in strontium titanate

Authors: A. Rubano, D. Paparo, F. Miletto Granozio, U. Scotti di Uccio, L. Marrucci

Abstract: We investigated the nanosecond-scale time decay of the blue-green light emitted by nominally pure SrTiO$_3$ following the absorption of an intense picosecond laser pulse generating a high density of electron-hole pairs. Two independent components are identified in the fluorescence signal that show a different dynamics with varying excitation intensity, and which can be respectively modeled as a… ▽ More We investigated the nanosecond-scale time decay of the blue-green light emitted by nominally pure SrTiO$_3$ following the absorption of an intense picosecond laser pulse generating a high density of electron-hole pairs. Two independent components are identified in the fluorescence signal that show a different dynamics with varying excitation intensity, and which can be respectively modeled as a bimolecular and unimolecolar process. An interpretation of the observed recombination kinetics in terms of interacting electron and hole polarons is proposed. △ Less

Submitted 4 December, 2007; originally announced December 2007.

Journal ref: Phys. Rev. B 76, 125115 (2007)

Direct Observation of Spectroscopic Inhomogeneities on La0.7Sr0.3MnO3 Thin Films by Scanning Tunnelling Spectroscopy

Authors: R. Di Capua, C. A. Perroni, V. Cataudella, F. Miletto Granozio, P. Perna, M. Salluzzo, U. Scotti Di Uccio, R. Vaglio

Abstract: Scanning tunnelling spectroscopy measurements were performed on La0.7Sr0.3MnO3 thin films both at room temperature and liquid nitrogen temperature. While no inhomogeneities were recorded at liquid nitrogen temperature on any sample, a clear evidence of spectroscopic inhomogeneities was evident in tunnelling conductance maps collected at room temperature. The investigated films exhibit a transiti… ▽ More Scanning tunnelling spectroscopy measurements were performed on La0.7Sr0.3MnO3 thin films both at room temperature and liquid nitrogen temperature. While no inhomogeneities were recorded at liquid nitrogen temperature on any sample, a clear evidence of spectroscopic inhomogeneities was evident in tunnelling conductance maps collected at room temperature. The investigated films exhibit a transition from a ferromagnetic-metallic to a paramagnetic-insulating state around room temperature, so that the observed spectroscopic features can be interpreted within a phase separation scenario. A quantitative analysis of the observed spectroscopic features is reported pointing out the occurrence of phase modulation and its possible correlation with the properties of the system. △ Less

Submitted 30 April, 2006; originally announced May 2006.

Feasibility of biepitaxial YBaCuO Josephson junctions for fundamental studies and potential circuit implementation

Authors: F. Tafuri, F. Carillo, F. Lombardi, F. Miletto Granozio, F. Ricci, U. Scotti di Uccio, A. Barone, G. Testa, E. Sarnelli, J. R. Kirtley

Abstract: We present various concepts and experimental procedures to produce biepitaxial YBaCuO grain boundary Josephson junctions. The device properties have an interesting phenomenology related in part to the possible influence of "pai loops". The performance of our junctions and Superconducting Quantum Interference Devices indicates significant improvement in the biepitaxial technique. Further, we prop… ▽ More We present various concepts and experimental procedures to produce biepitaxial YBaCuO grain boundary Josephson junctions. The device properties have an interesting phenomenology related in part to the possible influence of "pai loops". The performance of our junctions and Superconducting Quantum Interference Devices indicates significant improvement in the biepitaxial technique. Further, we propose methods for fabricating circuits in which "0-" and "pai-loops" are controllably located on the same chip. △ Less

Submitted 9 October, 2000; originally announced October 2000.

Comments: 10 figures to be published in Phys. Rev. B