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The stable category of Gorenstein-projective modules over a monomial algebra
Authors:
Takahiro Honma,
Satoshi Usui
Abstract:
Let $Λ$ be an arbitrary monomial algebra. We investigate the stable category $\underline{\operatorname{Gproj}}^{\mathbb{Z}}Λ$ of graded Gorenstein-projective $Λ$-modules and the orbit category $\underline{\operatorname{Gproj}}^{\mathbb{Z}} Λ/(1)$ induced by $\underline{\operatorname{Gproj}}^{\mathbb{Z}}Λ$ and the degree shift functor $(1)$. We prove that…
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Let $Λ$ be an arbitrary monomial algebra. We investigate the stable category $\underline{\operatorname{Gproj}}^{\mathbb{Z}}Λ$ of graded Gorenstein-projective $Λ$-modules and the orbit category $\underline{\operatorname{Gproj}}^{\mathbb{Z}} Λ/(1)$ induced by $\underline{\operatorname{Gproj}}^{\mathbb{Z}}Λ$ and the degree shift functor $(1)$. We prove that $\underline{\operatorname{Gproj}}^{\mathbb{Z}}Λ$ is triangle equivalent to the bounded derived category of a path algebra of Dynkin type $\mathbb{A}$ and that $\underline{\operatorname{Gproj}}^{\mathbb{Z}}Λ/(1)$ is triangle equivalent to the stable module category of a self-injective Nakayama algebra. Both the path algebra and the self-injective Nakayama algebra will be given explicitly. The latter result provides an explicit description of the stable category of (ungraded) Gorenstein-projective $Λ$-modules.
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Submitted 5 July, 2024;
originally announced July 2024.
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When is the silting-discreteness inherited?
Authors:
Takuma Aihara,
Takahiro Honma
Abstract:
We explore when the silting-discreteness is inherited. As a result, one obtains that taking idempotent truncations and homological epimorphisms of algebras transmit the silting-discreteness. We also study classification of silting-discrete simply-connected tensor algebras and silting-indiscrete selfinjective Nakayama algebras. This paper contains two appendices; one states that every derived-discr…
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We explore when the silting-discreteness is inherited. As a result, one obtains that taking idempotent truncations and homological epimorphisms of algebras transmit the silting-discreteness. We also study classification of silting-discrete simply-connected tensor algebras and silting-indiscrete selfinjective Nakayama algebras. This paper contains two appendices; one states that every derived-discrete algebra is silting-discrete, and the other is about triangulated categories whose silting objects are tilting.
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Submitted 17 April, 2023;
originally announced April 2023.
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On representation-finite gendo-symmetric algebras with only one non-injective projective module
Authors:
Takuma Aihara,
Aaron Chan,
Takahiro Honma
Abstract:
Motivated by the relation between Schur algebra and the group algebra of a symmetric group, along with other similar examples in algebraic Lie theory, Min Fang and Steffen Koenig addressed some behaviour of the endomorphism algebra of a generator over a symmetric algebra, which they called gendo-symmetric algebra. Continuing this line of works, we classify in this article the representation-finite…
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Motivated by the relation between Schur algebra and the group algebra of a symmetric group, along with other similar examples in algebraic Lie theory, Min Fang and Steffen Koenig addressed some behaviour of the endomorphism algebra of a generator over a symmetric algebra, which they called gendo-symmetric algebra. Continuing this line of works, we classify in this article the representation-finite gendo-symmetric algebras that have at most one isomorphism class of indecomposable non-injective projective module. We also determine their almost ν-stable derived equivalence classes in the sense of Wei Hu and Changchang Xi. It turns out that a representative can be chosen as the quotient of a representation-finite symmetric algebra by the socle of a certain indecomposable projective module.
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Submitted 29 December, 2020;
originally announced December 2020.
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$τ$-tilting finite triangular matrix algebras
Authors:
Takuma Aihara,
Takahiro Honma
Abstract:
First, we give a new example of silting-discrete algebras. Second, one explores when the algebra of triangular matrices over a finite dimensional algebra is $τ$-tilting finite. In particular, we classify algebras over which triangular matrix algebras are $τ$-tilting finite. Finally, we investigate when a triangular matrix algebra is silting-discrete.
First, we give a new example of silting-discrete algebras. Second, one explores when the algebra of triangular matrices over a finite dimensional algebra is $τ$-tilting finite. In particular, we classify algebras over which triangular matrix algebras are $τ$-tilting finite. Finally, we investigate when a triangular matrix algebra is silting-discrete.
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Submitted 15 March, 2021; v1 submitted 3 November, 2020;
originally announced November 2020.
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Report on the finiteness of silting objects
Authors:
Takuma Aihara,
Takahiro Honma,
Kengo Miyamoto,
Qi Wang
Abstract:
We discuss the finiteness of (two-term) silting objects. First, we investigate new triangulated categories without silting object. Second, one studies two classes of $τ$-tilting-finite algebras and give the numbers of their two-term silting objects. Finally, we explore when $τ$-tilting-finiteness implies representatoin-finiteness, and obtain several classes of algebras in which a $τ$-tilting-finit…
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We discuss the finiteness of (two-term) silting objects. First, we investigate new triangulated categories without silting object. Second, one studies two classes of $τ$-tilting-finite algebras and give the numbers of their two-term silting objects. Finally, we explore when $τ$-tilting-finiteness implies representatoin-finiteness, and obtain several classes of algebras in which a $τ$-tilting-finite algebra is representation-finite.
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Submitted 3 June, 2020; v1 submitted 19 February, 2020;
originally announced February 2020.
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Population-based de novo molecule generation, using grammatical evolution
Authors:
Naruki Yoshikawa,
Kei Terayama,
Teruki Honma,
Kenta Oono,
Koji Tsuda
Abstract:
Automatic design with machine learning and molecular simulations has shown a remarkable ability to generate new and promising drug candidates. Current models, however, still have problems in simulation concurrency and molecular diversity. Most methods generate one molecule at a time and do not allow multiple simulators to run simultaneously. Additionally, better molecular diversity could boost the…
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Automatic design with machine learning and molecular simulations has shown a remarkable ability to generate new and promising drug candidates. Current models, however, still have problems in simulation concurrency and molecular diversity. Most methods generate one molecule at a time and do not allow multiple simulators to run simultaneously. Additionally, better molecular diversity could boost the success rate in the subsequent drug discovery process. We propose a new population-based approach using grammatical evolution named ChemGE. In our method, a large population of molecules are updated concurrently and evaluated by multiple simulators in parallel. In docking experiments with thymidine kinase, ChemGE succeeded in generating hundreds of high-affinity molecules whose diversity is better than that of known inding molecules in DUD-E.
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Submitted 6 April, 2018;
originally announced April 2018.
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On the quantitative determination of hole-concentration in high-temperature cuprate superconductors
Authors:
T. Honma,
P. H. Hor
Abstract:
We compared four hole-scales that have been used to determine the hole-concentration in high-temperature cuprate superconductors. We show that the hole-scale, $P_{pl}$-scale, based on the thermoelectric power [T. Honma $et$ $al$., Phys. Rev. B70, (2004) 214517.] is quantitatively consistent with spectroscopic probes for many different cuprate materials, while the other hole-scales, based on a well…
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We compared four hole-scales that have been used to determine the hole-concentration in high-temperature cuprate superconductors. We show that the hole-scale, $P_{pl}$-scale, based on the thermoelectric power [T. Honma $et$ $al$., Phys. Rev. B70, (2004) 214517.] is quantitatively consistent with spectroscopic probes for many different cuprate materials, while the other hole-scales, based on a well-known dome-shaped $T_c$-curve [M. R. Presland $et$ $al$., Physica C176, 95 (1991)], the $c$-axis lattice parameter [R. Liang $et$ $al$., Phys. Rev. B73, (2006) 180505(R).], and Hall coefficient [Y. Ando $et$ $al$., Phys. Rev. B61, (2000) 14956(R).], are not. We show that the quantitatively different hole-scales resulted in opposite conclusion of the same experimental observations. It can also lead to different interpretations of the electronic phase diagram when comparing different physical properties in different high-$T_c$ systems. We suggest that the $P_{pl}$-scale is the correct universal scale that works for all high-$T_c$ cuprates and it should be used for all quantitative doping dependence studies of cuprates.
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Submitted 28 February, 2015;
originally announced March 2015.
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Anisotropic magnetoresistance of charge-density wave in $o$-TaS$_3$
Authors:
Katsuhiko Inagaki,
Toru Matsuura,
Masakatsu Tsubota,
Shinya Uji,
Tatsuya Honma,
Satoshi Tanda
Abstract:
We report the magnetoresistance of a charge-density wave (CDW) in $o$-TaS$_3$ whiskers at 4.2 K under a magnetic field up to 5.2 T. An anisotropic negative magnetoresistance is found in the nonlinear regime of current-voltage characteristics. The angle dependence of the magnetoresistance, studied by rotating the magnetic field upon the $c$-axis, exhibited a two-fold symmetry. The magnetoresistance…
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We report the magnetoresistance of a charge-density wave (CDW) in $o$-TaS$_3$ whiskers at 4.2 K under a magnetic field up to 5.2 T. An anisotropic negative magnetoresistance is found in the nonlinear regime of current-voltage characteristics. The angle dependence of the magnetoresistance, studied by rotating the magnetic field upon the $c$-axis, exhibited a two-fold symmetry. The magnetoresistance amplitude exhibits maxima when the field is parallel to the $a$-axis, whereas it vanishes to the $b$-axis. The observed anisotropy may come from difference in interchain coupling of adjacent CDWs along the $a$- and $b$-axes. Comparison of the anisotropy to the scanning tunneling microscope image of CDWs allows us to provide a simple picture to explain the magnetoresistance in terms of delocalization of quantum interference of CDWs extending over the $b$-$c$ plane.
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Submitted 8 January, 2016; v1 submitted 25 July, 2014;
originally announced July 2014.
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Quantitative connection between the nanoscale electronic inhomogeneity and the pseudogap of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ superconductors
Authors:
Tatsuya Honma,
Pei-Herng Hor
Abstract:
We have found a quantitative connection between the evolution of the inhomogeneous nanoscale electronic gaps (INSEG) state detected in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ by scanning tunneling microscopy/spectroscopy (STM/S) and the two universal, the upper and the lower, pseudogaps in high-temperature cuprate superconductors (HTCS). When the doping and temperature dependent INSEG map were analyzed by u…
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We have found a quantitative connection between the evolution of the inhomogeneous nanoscale electronic gaps (INSEG) state detected in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ by scanning tunneling microscopy/spectroscopy (STM/S) and the two universal, the upper and the lower, pseudogaps in high-temperature cuprate superconductors (HTCS). When the doping and temperature dependent INSEG map were analyzed by using our proposed hole-scale, we find that the two pseudogaps are connected to two specific coverages of the CuO$_2$ plane by INSEG: the 50\% and 100\% coverages of the CuO$_2$ planes by INSEG correspond to the upper and lower pseudogaps, respectively. This quantitative connection to the two pseudogaps indicates that the origin of the measured pseudogap energies and temperatures are intimately related to the geometrical coverage of the CuO$_2$ planes by the INSEG state. We find that INSEG and superconductivity coexist in the underdoped to the overdoped regimes. We suggest that pseudogap states are microscopically inhomogeneous and 100\% coverage of the CuO$_2$ planes by the INSEG is a necessary condition for the high-$T_c$ superconductivity.
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Submitted 31 December, 2014; v1 submitted 18 February, 2013;
originally announced February 2013.
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Universal intrinsic doping behavior of in-plane dc conductivity for hole-doped high-temperature cuprate superconductors
Authors:
Tatsuya Honma,
Pei-Herng Hor
Abstract:
Understanding the normal state transport properties in hole-doped high-temperature cuprate superconductors (HTCSs) is a challenging task which has been widely believed to be one of the key steps toward revealing the pairing mechanism of high-temperature superconductivity. Here, we present a true intrinsic and universal doping dependence of in-plane dc conductivity for all underdoped HTCSs. The dop…
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Understanding the normal state transport properties in hole-doped high-temperature cuprate superconductors (HTCSs) is a challenging task which has been widely believed to be one of the key steps toward revealing the pairing mechanism of high-temperature superconductivity. Here, we present a true intrinsic and universal doping dependence of in-plane dc conductivity for all underdoped HTCSs. The doping dependence of in-plane dc conductivity normalized to that at optimal doping can be represented by a simple exponential formula. The doping behavior of the square of the nodal Fermi velocity derived by the high-resolution laser-based angle-resolved photoemission spectroscopy in the superconducting state follows reasonably well the universal intrinsic doping behavior. Our findings suggest a commonality of the low-energy quasiparticles both in the normal and superconducting states that place a true universal and stringent constraint on the mechanism of high-temperature superconductivity for HTCSs.
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Submitted 24 May, 2011;
originally announced May 2011.
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Universal scaling of c-axis dc conductivity for the underdoped hightemperature cuprate superconductors
Authors:
Tatsuya Honma,
Pei-Herng Hor
Abstract:
Coexistence of the "metallic-like" in-plane and the "semiconducting-like" out-of-plane (caxis) dc conductivities (σc), generating a huge anisotropy in the underdoped hightemperature cuprate superconductors (HTCS), defies our current understanding of metal. In this report we present an intrinsic doping dependence of σc. We find that the σc for the underdoped HTCS is universally scaled to the σc at…
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Coexistence of the "metallic-like" in-plane and the "semiconducting-like" out-of-plane (caxis) dc conductivities (σc), generating a huge anisotropy in the underdoped hightemperature cuprate superconductors (HTCS), defies our current understanding of metal. In this report we present an intrinsic doping dependence of σc. We find that the σc for the underdoped HTCS is universally scaled to the σc at the optimal doped-hole concentration. The universal scaling behavior suggests that there are three intrinsic processes contribute to σc: (i) the doping-dependent-activated gap; (ii) the exponential doping dependences and (iii) the tunneling between adjacent CuO2 block layers. They are the essential underlying characteristics of the c-axis transport for all HTCSs.
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Submitted 5 October, 2010;
originally announced October 2010.
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Comparison of the Hole Concentration determined by Transport Measurement for the Hole-doped Cuprate Superconductors
Authors:
Tatsuya Honma,
Pei Herng Hor
Abstract:
We have compared the hole concentration ($P_{pl}$) determined by hole-scale based on the thermoelectric power at RT ($S^{290}$) to the hole concentrations ($P$) determined by two popular hole-scales based on the superconducting critical temperature ($T_c$) and Hall coefficient ($R_H$). While the hole concentrations based on different hole-scales are different, we show that when the $P_{pl}$ is d…
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We have compared the hole concentration ($P_{pl}$) determined by hole-scale based on the thermoelectric power at RT ($S^{290}$) to the hole concentrations ($P$) determined by two popular hole-scales based on the superconducting critical temperature ($T_c$) and Hall coefficient ($R_H$). While the hole concentrations based on different hole-scales are different, we show that when the $P_{pl}$ is divided by either the effective unit cell volume ($V_{euc}$) which is the unit-cell volume per one CuO$_2$ plane or the optimal hole concentration ($P_{pl}^{opt}$) we can find some correlation between $P_{pl}$ and $P$. That is, the normalized $T_c$ ($T_c$ / $T_c$($P_{pl}^{opt}$)) and the Hall number (1/$eR_H$) are well scaled with $P_{pl}$ / $P_{pl}^{opt}$ and $P_{pl}$ / $V_{euc}$, respectively. We find that the $P_{pl}$-scale can map to and reproduce the other two hole scales if proper dimensionality and normalization are taken into account but not vice versa.
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Submitted 17 November, 2009;
originally announced November 2009.
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Unified electronic phase diagram for hole-doped high-Tc cuprates
Authors:
T. Honma,
P. H. Hor
Abstract:
We have analyzed various characteristic temperatures and energies of hole-doped high-Tc cuprates as a function of a dimensionless hole-doping concentration (pu). Entirely based on the experimental grounds we construct a unified electronic phase diagram (UEPD), where three characteristic temperatures (T*'s) and their corresponding energies (E*'s) converge as pu increases in the underdoped regime.…
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We have analyzed various characteristic temperatures and energies of hole-doped high-Tc cuprates as a function of a dimensionless hole-doping concentration (pu). Entirely based on the experimental grounds we construct a unified electronic phase diagram (UEPD), where three characteristic temperatures (T*'s) and their corresponding energies (E*'s) converge as pu increases in the underdoped regime. T*'s and E*'s merge together with the Tc curve and 3.5kBTc curve at pu - 1.1 in the overdoped regime, respectively. They finally go to zero at pu - 1.3. The UEPD follows an asymmetric half-dome-shaped Tc curve in which Tc appears at pu - 0.4, reaches a maximum at pu - 1, and rapidly goes to zero at pu - 1.3. The asymmetric half-dome-shaped Tc curve is at odds with the well-known symmetric superconducting dome for La2-xSrxCuO4 (SrD-La214), in which two characteristic temperatures and energies converge as pu increases and merge together at pu - 1.6, where Tc goes to zero. The UEPD clearly shows that pseudogap phase precedes and coexists with high temperature superconductivity in the underdoped and overdoped regimes, respectively. It is also clearly seen that the upper limit of high-Tc cuprate physics ends at a hole concentration that equals to 1.3 times the optimal doping concentration for almost all high-Tc cuprate materials, and 1.6 times the optimal doping concentration for the SrD-La214. Our analysis strongly suggests that pseudogap is a precursor of high-Tc superconductivity, the observed quantum critical point inside the superconducting dome may be related to the end point of UEPD, and the normal state of the underdoped and overdoped high temperature superconductors cannot be regarded as a conventional Fermi liquid phase.
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Submitted 12 May, 2008; v1 submitted 9 January, 2008;
originally announced January 2008.
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Compensation of the Crossing Angle with Crab Cavities at KEKB
Authors:
T. Abe,
K. Akai,
M. Akemoto,
A. Akiyama,
M. Arinaga,
K. Ebihara,
K. Egawa,
A. Enomoto,
J. Flanagan,
S. Fukuda,
H. Fukuma,
Y. Funakoshi,
K. Furukawa,
T. Furuya,
K. Hara,
T. Higo,
S. Hiramatsu,
H. Hisamatsu,
H. Honma,
T. Honma,
K. Hosoyama,
T. Ieiri,
N. Iida,
H. Ikeda,
M. Ikeda
, et al. (90 additional authors not shown)
Abstract:
Crab cavities have been installed in the KEKB B--Factory rings to compensate the crossing angle at the collision point and thus increase luminosity. The beam operation with crab crossing has been done since February 2007. This is the first experience with such cavities in colliders or storage rings. The crab cavities have been working without serious issues. While higher specific luminosity than…
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Crab cavities have been installed in the KEKB B--Factory rings to compensate the crossing angle at the collision point and thus increase luminosity. The beam operation with crab crossing has been done since February 2007. This is the first experience with such cavities in colliders or storage rings. The crab cavities have been working without serious issues. While higher specific luminosity than the geometrical gain has been achieved, further study is necessary and under way to reach the prediction of simulation.
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Submitted 21 June, 2007;
originally announced June 2007.
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Intrinsic electronic superconducting phases at 60 K and 90 K in double-layer YBa$_2$Cu$_3$O$_{6+δ}$
Authors:
T. Honma,
P. H. Hor
Abstract:
We study superconducting transition temperature ($T_c$) of oxygen-doped double-layer high-temperature superconductors YBa$_2$Cu$_3$O$_{6+δ}$ (0 $\le$ $δ$ $\le$ 1) as a function of the oxygen dopant concentration ($δ$) and planar hole-doping concentration ($P_{pl}$). We find that $T_c$, while clearly influenced by the development of the chain ordering as seen in the $T_c$ $vs.$ $δ$ plot, lies on…
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We study superconducting transition temperature ($T_c$) of oxygen-doped double-layer high-temperature superconductors YBa$_2$Cu$_3$O$_{6+δ}$ (0 $\le$ $δ$ $\le$ 1) as a function of the oxygen dopant concentration ($δ$) and planar hole-doping concentration ($P_{pl}$). We find that $T_c$, while clearly influenced by the development of the chain ordering as seen in the $T_c$ $vs.$ $δ$ plot, lies on a universal curve originating at the critical hole concentration ($P_c$) = 1/16 in the $T_c$ $vs.$ $P_{pl}$ plot. Our analysis suggests that the universal behavior of $T_c$($P_{pl}$) can be understood in terms of the competition and collaboration of chemical-phases and electronic-phases that exist in the system. We conclude that the global superconductivity behavior of YBa$_2$Cu$_3$O$_{6+δ}$ as a function of doping is electronically driven and dictated by pristine electronic phases at magic doping numbers that follow the hierarchical order based on $P_c$, such as 2 $\times$ $P_c$, 3 $\times$ $P_c$ and 4 $\times$ $P_c$. We find that there are at least two intrinsic electronic superconducting phases of $T_c$ = 60 K at 2 $\times$ $P_c$ = 1/8 and $T_c$ = 90 K at 3 $\times$ $P_c$ = 3/16.
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Submitted 13 November, 2006;
originally announced November 2006.
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Planar hole-doping concentration and effective three-dimensional hole-doping concentration for single-layer high-$T_c$ superconductors
Authors:
Tatsuya Honma,
Pei Herng Hor
Abstract:
We propose that physical properties for the high temperature superconductors can be addressed by either a two-dimensional planar hole-doping concentration ($P_{pl}$) or an effective three-dimentional hole-doping concentration ($P_{3D}$). We find that superconducting transition temperature ($T_c$) exhibits a universal dome-shaped behavior in the $T_c$ $vs.$ $P_{3D}$ plot with a universal optimal…
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We propose that physical properties for the high temperature superconductors can be addressed by either a two-dimensional planar hole-doping concentration ($P_{pl}$) or an effective three-dimentional hole-doping concentration ($P_{3D}$). We find that superconducting transition temperature ($T_c$) exhibits a universal dome-shaped behavior in the $T_c$ $vs.$ $P_{3D}$ plot with a universal optimal doping concentration at $P_{3D}$ $\sim$ 1.6 $\times$ 10$^{21}$ cm$^{-3}$ for the single-layer high temperature superconductors.
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Submitted 15 December, 2006; v1 submitted 23 June, 2006;
originally announced June 2006.
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Universal optimal hole-doping concentration in single-layer high-temperature cuprate superconductors
Authors:
T. Honma,
P. H. Hor
Abstract:
We argue that in cuprate physics there are two types, hole content per CuO$_2$ plane ($P_{pl}$) and the corresponding hole content per unit volume ($P_{3D}$), of hole-doping concentrations for addressing physical properties that are two-dimensional (2D) and three-dimensional (3D) in nature, respectively. We find that superconducting transition temperature ($T_c$) varies systematically with…
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We argue that in cuprate physics there are two types, hole content per CuO$_2$ plane ($P_{pl}$) and the corresponding hole content per unit volume ($P_{3D}$), of hole-doping concentrations for addressing physical properties that are two-dimensional (2D) and three-dimensional (3D) in nature, respectively. We find that superconducting transition temperature ($T_c$) varies systematically with $P_{3D}$ as a superconducting \textquotedblleft $dome$\textquotedblright with a universal optimal hole-doping concentration $P_{3D}^{opt.}$ = 1.6 $\times$ 10$^{21}$ cm$^{-3}$ for single-layer high temperature superconductors. We suggest that $P_{3D}^{opt.}$ determines the upper bound of the electronic energy of underdoped single-layer high-$T_c$ cuprates.
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Submitted 15 December, 2006; v1 submitted 20 February, 2006;
originally announced February 2006.
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A Universal Intrinsic Scale of Hole Concentration for High-Tc Cuprates
Authors:
T. Honma,
P. H. Hor,
H. H. Hsieh,
M. Tanimoto
Abstract:
We have measured thermoelectric power (TEP) as a function of hole concentration per CuO2 layer, Ppl, in Y1-xCaxBa2Cu3O6 (Ppl = x/2) with no oxygen in the Cu-O chain layer. The room-temperature TEP as a function of Ppl, S290(Ppl), of Y1-xCaxBa2Cu3O6 behaves identically to that of La2-zSrzCuO4 (Ppl = z). We argue that S290(Ppl) represents a measure of the intrinsic equilibrium electronic states of…
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We have measured thermoelectric power (TEP) as a function of hole concentration per CuO2 layer, Ppl, in Y1-xCaxBa2Cu3O6 (Ppl = x/2) with no oxygen in the Cu-O chain layer. The room-temperature TEP as a function of Ppl, S290(Ppl), of Y1-xCaxBa2Cu3O6 behaves identically to that of La2-zSrzCuO4 (Ppl = z). We argue that S290(Ppl) represents a measure of the intrinsic equilibrium electronic states of doped holes and, therefore, can be used as a common scale for the carrier concentrations of layered cuprates. We shows that the Ppl determined by this new universal scale is consistent with both hole concentration microscopically determined by NQR and the hole concentration macroscopically determined by the Cu valency. We find two characteristic scaling temperatures, TS* and TS2*, in the TEP vs. temperature curves that change systematically with doping. Based on the universal scale, we uncover a universal phase diagram in which almost all the experimentally determined pseudogap temperatures as a function of Ppl fall on two common curves; upper pseudogap temperature defined by the TS* versus Ppl curve and lower pseudogap temperature defined by the TS2* versus Ppl curve. We find that while pseudogaps are intrinsic properties of doped holes of a single CuO2 layer for all high-Tc cuprates, Tc depends on the number of layers, therefore the inter-layer coupling, in each individual system.
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Submitted 1 October, 2004; v1 submitted 25 September, 2003;
originally announced September 2003.
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An Intrinsic Tendency of Electronic Phase Separation into Two Superconducting States in La(2-x)Sr(x)CuO(4+delta)
Authors:
B. Lorenz,
Z. G. Li,
T. Honma,
P. -H. Hor
Abstract:
The effect of hydrostatic pressure up to 2 GPa on the superconductiong transitions in La{2-x}Sr{x}CuO{4+delta} is investigated. The ambient and high pressure properties of two series of samples with x=0 and x=0.015 and 0<delta<0.1 are characterized and compared by ac-susceptibility measurements. At ambient pressure both sets of samples fit into the same phase diagram as a function of the total h…
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The effect of hydrostatic pressure up to 2 GPa on the superconductiong transitions in La{2-x}Sr{x}CuO{4+delta} is investigated. The ambient and high pressure properties of two series of samples with x=0 and x=0.015 and 0<delta<0.1 are characterized and compared by ac-susceptibility measurements. At ambient pressure both sets of samples fit into the same phase diagram as a function of the total hole concentration, n_h. For n_h<0.085 there is a single superconducting transition (T_{c} approx 30 K) with an unusually large pressure coefficient, dT_c{30}/dp approx 10K/GPa. At higher hole density (n_h>0.085) a second superconducting transition (T_{c} approx 15 K) follows the first transition upon cooling and the pressure shift of this transition is negative, dT_c{15}/dp approx -4 K/GPa. At the boundary as the hole density is close to 0.085 the phase separation can be induced by pressure. The results are explained in terms of a strong correlation of the interstitial oxygen with the hole system in the CuO-planes. Pressure, applied at ambient temperature, causes a redistribution of holes. The mobile oxygen dopants follow and enhance T_c as well as the tendency to phase separation. If pressure is changed at low temperature (<100 K) the effects on T_c and phase separations are greatly diminished because the interstitial oxygen becomes immobile at low T. Our results indicate that the dopant effects are important. Dopants and holes should be treated as a single globally correlated state. When thermodynamic euqilibrium is achieved in the soft-doping samples, we find that there is an intrinsic tendency of electronic phase separation of doped holes into two distinct superconducting states.
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Submitted 5 February, 2002; v1 submitted 1 November, 2001;
originally announced November 2001.
