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MedPerf: Open Benchmarking Platform for Medical Artificial Intelligence using Federated Evaluation
Authors:
Alexandros Karargyris,
Renato Umeton,
Micah J. Sheller,
Alejandro Aristizabal,
Johnu George,
Srini Bala,
Daniel J. Beutel,
Victor Bittorf,
Akshay Chaudhari,
Alexander Chowdhury,
Cody Coleman,
Bala Desinghu,
Gregory Diamos,
Debo Dutta,
Diane Feddema,
Grigori Fursin,
Junyi Guo,
Xinyuan Huang,
David Kanter,
Satyananda Kashyap,
Nicholas Lane,
Indranil Mallick,
Pietro Mascagni,
Virendra Mehta,
Vivek Natarajan
, et al. (17 additional authors not shown)
Abstract:
Medical AI has tremendous potential to advance healthcare by supporting the evidence-based practice of medicine, personalizing patient treatment, reducing costs, and improving provider and patient experience. We argue that unlocking this potential requires a systematic way to measure the performance of medical AI models on large-scale heterogeneous data. To meet this need, we are building MedPerf,…
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Medical AI has tremendous potential to advance healthcare by supporting the evidence-based practice of medicine, personalizing patient treatment, reducing costs, and improving provider and patient experience. We argue that unlocking this potential requires a systematic way to measure the performance of medical AI models on large-scale heterogeneous data. To meet this need, we are building MedPerf, an open framework for benchmarking machine learning in the medical domain. MedPerf will enable federated evaluation in which models are securely distributed to different facilities for evaluation, thereby empowering healthcare organizations to assess and verify the performance of AI models in an efficient and human-supervised process, while prioritizing privacy. We describe the current challenges healthcare and AI communities face, the need for an open platform, the design philosophy of MedPerf, its current implementation status, and our roadmap. We call for researchers and organizations to join us in creating the MedPerf open benchmarking platform.
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Submitted 28 December, 2021; v1 submitted 29 September, 2021;
originally announced October 2021.
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Robust topological Hall effect driven by tunable noncoplanar magnetic state in Mn-Pt-In inverse tetragonal Heusler alloys
Authors:
Bimalesh Giri,
Arif Iqbal Mallick,
Charanpreet Singh,
P. V. Prakash Madduri,
Françoise Damay,
Aftab Alam,
Ajaya K. Nayak
Abstract:
Manipulation of magnetic ground states by effective control of competing magnetic interactions has led to the finding of many exotic magnetic states. In this direction, the tetragonal Heusler compounds consisting of multiple magnetic sublattices and crystal symmetry favoring chiral Dzyaloshinskii-Moriya interaction (DMI) provide an ideal base to realize non-trivial magnetic structures. Here, we pr…
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Manipulation of magnetic ground states by effective control of competing magnetic interactions has led to the finding of many exotic magnetic states. In this direction, the tetragonal Heusler compounds consisting of multiple magnetic sublattices and crystal symmetry favoring chiral Dzyaloshinskii-Moriya interaction (DMI) provide an ideal base to realize non-trivial magnetic structures. Here, we present the observation of a large robust topological Hall effect (THE) in the multi-sublattice Mn$_{2-x}$PtIn Heusler magnets. The topological Hall resistivity, which originates from the non-vanishing real space Berry curvature in the presence of non-zero scalar spin chirality, systematically decreases with decreasing the magnitude of the canting angle of the magnetic moments at different sublattices. With help of first principle calculations, magnetic and neutron diffraction measurements, we establish that the presence of a tunable non-coplanar magnetic structure arising from the competing Heisenberg exchanges and chiral DMI from the D$_{2d}$ symmetry structure is responsible for the observed THE. The robustness of the THE with respect to the degree of non-collinearity adds up a new degree of freedom for designing THE based spintronic devices.
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Submitted 31 August, 2020;
originally announced August 2020.
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High spin polarization and large spin splitting in equiatomic quaternary CoFeCrAl Heusler alloy
Authors:
Lakhan Bainsla,
A. I. Mallick,
A. A. Coelho,
A. K. Nigam,
B. S. D. Ch. S. Varaprasad,
Y. K. Takahashi,
Aftab Alam,
K. G. Suresh,
K. Hono
Abstract:
In this paper, we investigate CoFeCrAl alloy by means of various experimental techniques and ab-initio calculations to look for half-metallic nature. The alloy is found to exist in the cubic Heusler structure, with presence of B2 ordering. Saturation magnetization (MS) value of about 2 Bohr magneton/f.u. is observed at 8 K under ambient pressure, which is in good agreement with the Slater-Pauling…
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In this paper, we investigate CoFeCrAl alloy by means of various experimental techniques and ab-initio calculations to look for half-metallic nature. The alloy is found to exist in the cubic Heusler structure, with presence of B2 ordering. Saturation magnetization (MS) value of about 2 Bohr magneton/f.u. is observed at 8 K under ambient pressure, which is in good agreement with the Slater-Pauling rule. MS values are found to be independent of pressure, which is a prerequisite for half-metals. The ab-initio electronic structure calculations predict half-metallic nature for the alloy with a spin slitting energy of 0.31 eV. Importantly, this system shows a high current spin polarization value of 0.67 [with error of 0.02], as deduced from the point contact Andreev reflection (PCAR) measurements. Linear dependence of electrical resistivity with temperature indicates the possibility of reasonably high spin polarization at elevated temperatures (~150 K) as well. All these suggest that CoFeCrAl is a promising material for the spintronic devices.
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Submitted 22 January, 2015;
originally announced January 2015.
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A new spin gapless semiconductor: quaternary Heusler CoFeCrGa alloy
Authors:
Lakhan Bainsla,
A. I. Mallick,
M. Manivel Raja,
A. A. Coelho,
A. K. Nigam,
D. D. Johnson,
Aftab Alam,
K. G. Suresh
Abstract:
Despite a plethora of materials suggested for spintronic applications, a new class of materials has emerged, namely spin gapless semiconductors (SGS), that offers potentially more advantageous properties than existing ones. These magnetic semiconductors exhibit a finite band gap for one spin channel and a closed gap for the other. Here, supported by the first-principles, electronic-structure calcu…
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Despite a plethora of materials suggested for spintronic applications, a new class of materials has emerged, namely spin gapless semiconductors (SGS), that offers potentially more advantageous properties than existing ones. These magnetic semiconductors exhibit a finite band gap for one spin channel and a closed gap for the other. Here, supported by the first-principles, electronic-structure calculations, we report the first experimental evidence of SGS behavior in equiatomic quaternary CoFeCrGa, having a cubic Heusler (L21) structure but exhibiting chemical disorder (DO3 structure). CoFeCrGa is found to transform from SGS to half-metallic phase under pressure, which is attributed to unique electronic-structure features. The saturation magnetization (MS) obtained at 8 K agrees with the Slater-Pauling rule and the Curie temperature (TC) is found to exceed 400 K. Carrier concentration (up to 250 K) and electrical conductivity are observed to be nearly temperature independent, prerequisites for SGS. The anomalous Hall coefficient is estimated to be 185 S/cm at 5 K. Considering the SGS properties and high TC, this material appears to be promising for spintronic applications.
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Submitted 18 March, 2015; v1 submitted 21 November, 2014;
originally announced November 2014.
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Spin gapless semiconducting behavior in equiatomic quaternary CoFeMnSi Heusler alloy
Authors:
Lakhan Bainsla,
A. I. Mallick,
M. Manivel Raja,
A. K. Nigam,
B. S. D. Ch. S. Varaprasad,
Y. K. Takahashi,
Aftab Alam,
K. G. Suresh,
K. Hono
Abstract:
Spin gapless semiconductors (SGS) form a new class of magnetic semiconductors, which has a band gap for one spin sub band and zero band gap for the other, and thus are useful for tunable spin transport based applications. In this paper, we report the first experimental evidence for spin gapless semiconducting behavior in CoFeMnSi Heusler alloy. Such a behavior is also confirmed by first principles…
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Spin gapless semiconductors (SGS) form a new class of magnetic semiconductors, which has a band gap for one spin sub band and zero band gap for the other, and thus are useful for tunable spin transport based applications. In this paper, we report the first experimental evidence for spin gapless semiconducting behavior in CoFeMnSi Heusler alloy. Such a behavior is also confirmed by first principles band structure calculations. The most stable configuration obtained by the theoretical calculation is verified by experiment. The alloy is found to crystallize in the cubic Heusler structure (LiMgPdSn type) with some amount of disorder and has a saturation magnetization of 3.7 Bohr's magneton/f.u.. and Curie temperature of 620 K. The saturation magnetization is found to follow the Slater-Pauling behavior, one of the prerequisites for SGS. Nearly temperature-independent carrier concentration and electrical conductivity is observed from 5 to 300 K. An anomalous Hall coefficient of 162 S/cm is obtained at 5 K. Point contact Andreev reflection data has yielded the current spin polarization value of 0.64, which is found to be robust against the structural disorder. All these properties are quite promising for the spintronic applications such as spin injection and can bridge a gap between the contrasting behavior of half-metallic ferromagnets and semiconductors.
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Submitted 1 October, 2014;
originally announced October 2014.
