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Exciton self-trapping in twisted hexagonal boron nitride homostructures
Authors:
Sébastien Roux,
Christophe Arnold,
Etienne Carré,
Alexandre Plaud,
Lei Ren,
Eli Janzen,
James H. Edgar,
Camille Maestre,
Bérangère Toury,
Catherine Journet,
Vincent Garnier,
Philippe Steyer,
Takashi Taniguchi,
Kenji Watanabe,
Cédric Robert,
Xavier Marie,
Annick Loiseau,
Julien Barjon
Abstract:
One of the main interests of 2D materials is their ability to be assembled with many degrees of freedom for tuning and manipulating excitonic properties. There is a need to understand how the structure of the interfaces between atomic layers influences exciton properties. Here we use cathodoluminescence (CL) and time-resolved CL experiments to study how excitons interact with the interface between…
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One of the main interests of 2D materials is their ability to be assembled with many degrees of freedom for tuning and manipulating excitonic properties. There is a need to understand how the structure of the interfaces between atomic layers influences exciton properties. Here we use cathodoluminescence (CL) and time-resolved CL experiments to study how excitons interact with the interface between two twisted hexagonal boron nitride (hBN) crystals with various angles. An efficient capture of free excitons by the interface is demonstrated, which leads to a population of long lived and interface-localized (2D) excitons. Temperature dependent experiments indicate that for high twist angles, these excitons localized at the interface further undergo a self-trapping. It consists in a distortion of the lattice around the exciton on which the exciton traps itself. Our results suggest that this exciton-interface interaction causes a broad optical emission of highly twisted hBN-hBN structures around 300 nm (4 eV). Exciton self-trapping is finally discussed as a common feature of sp2 hybridized boron nitride polytypes and nanostructures due to the ionic nature of the B-N bond and their compact excitons.
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Submitted 15 May, 2024;
originally announced May 2024.
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Optical Imaging of Flavor Order in Flat Band Graphene
Authors:
Tian Xie,
Tobias M. Wolf,
Siyuan Xu,
Zhiyuan Cui,
Richen Xiong,
Yunbo Ou,
Patrick Hays,
Ludwig F Holleis,
Yi Guo,
Owen I Sheekey,
Caitlin Patterson,
Trevor Arp,
Kenji Watanabe,
Takashi Taniguchi,
Seth Ariel Tongay,
Andrea F Young,
Allan H. MacDonald,
Chenhao Jin
Abstract:
Spin and valley flavor polarization plays a central role in the many-body physics of flat band graphene, with fermi surface reconstructions often accompanied by quantized anomalous Hall and superconducting state observed in a variety of experimental systems. Here we describe an optical technique that sensitively and selectively detects flavor textures via the exciton response of a proximal transit…
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Spin and valley flavor polarization plays a central role in the many-body physics of flat band graphene, with fermi surface reconstructions often accompanied by quantized anomalous Hall and superconducting state observed in a variety of experimental systems. Here we describe an optical technique that sensitively and selectively detects flavor textures via the exciton response of a proximal transition metal dichalcogenide layer. Through a systematic study of rhombohedral and rotationally faulted graphene bilayers and trilayers, we show that when the semiconducting dichalcogenide is in direct contact with the graphene, the exciton response is most sensitive to the large momentum rearrangement of the Fermi surface, providing information that is distinct from and complementary to electrical compressibility measurements. The wide-field imaging capability of optical probes allows us to obtain spatial maps of flavor orders with high throughput, and with broad temperature and device compatibility. Our work paves the way for optical probing and imaging of flavor orders in flat band graphene systems.
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Submitted 13 May, 2024;
originally announced May 2024.
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Quasiparticle and superfluid dynamics in Magic-Angle Graphene
Authors:
Elías Portolés,
Marta Perego,
Pavel A. Volkov,
Mathilde Toschini,
Yana Kemna,
Alexandra Mestre-Torà,
Giulia Zheng,
Artem O. Denisov,
Folkert K. de Vries,
Peter Rickhaus,
Takashi Taniguchi,
Kenji Watanabe,
J. H. Pixley,
Thomas Ihn,
Klaus Ensslin
Abstract:
Magic-Angle Twisted Bilayer Graphene shows a wide range of correlated phases which are electrostatically tunable. Despite a growing knowledge of the material, there is yet no consensus on the microscopic mechanisms driving its superconducting phase. In particular, elucidating the symmetry and formation mechanism of the superconducting phase may provide key insights for the understanding of unconve…
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Magic-Angle Twisted Bilayer Graphene shows a wide range of correlated phases which are electrostatically tunable. Despite a growing knowledge of the material, there is yet no consensus on the microscopic mechanisms driving its superconducting phase. In particular, elucidating the symmetry and formation mechanism of the superconducting phase may provide key insights for the understanding of unconventional, strongly coupled and topological superconductivity. A major obstacle to progress in this direction is that key thermodynamic properties, such as specific heat, electron-phonon coupling and superfluid stiffness, are extremely challenging to measure due to the 2D nature of the material and its relatively low energy scales. Here, we use a gate-defined, radio frequency-biased, Josephson junction to probe the electronic dynamics of magic-angle twisted bilayer graphene (MATBG). We reveal both the electronic quasiparticle dynamics, driven by their thermalization through phonon scattering, as well as the condensate dynamics, driven by the inertia of Cooper pairs. From these properties we recover the evolution of thermalization rates, and the superfluid stiffness across the phase diagram. Our findings favor an anisotropic or nodal pairing state and allow to estimate the strength of electron-phonon coupling. These results contribute to understanding the underlying mechanisms of superconductivity in MATBG while establishing an easy-to-implement method for characterizing thermal and superfluid properties of superconducting 2D materials.
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Submitted 10 May, 2024;
originally announced May 2024.
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Characterization of a graphene-hBN superlattice field effect transistor
Authors:
Won Beom Choi,
Youngoh Son,
Hangyeol Park,
Yungi Jeong,
Junhyeok Oh,
K. Watanabe,
T. Taniguchi,
Joonho Jang
Abstract:
Graphene provides a unique platform for hosting high quality 2D electron systems. Encapsulating graphene with hexagonal boron nitride (hBN) to shield it from noisy environments offers the potential to achieve ultrahigh performance nanodevices, such as photodiodes and transistors. However, the absence of a bandgap at the Dirac point presents challenges for using this system as a useful transistor.…
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Graphene provides a unique platform for hosting high quality 2D electron systems. Encapsulating graphene with hexagonal boron nitride (hBN) to shield it from noisy environments offers the potential to achieve ultrahigh performance nanodevices, such as photodiodes and transistors. However, the absence of a bandgap at the Dirac point presents challenges for using this system as a useful transistor. In this study, we investigated the functionality of hBN-aligned monolayer graphene as a field effect transistor (FET). By precisely aligning the hBN and graphene, bandgaps open at the first Dirac point and at the hole-doped induced Dirac point via an interfacial moiré potential. To characterize this as a submicrometer scale FET, we fabricated a global bottom gate to tune the density of a conducting channel and a local top gate to switch off this channel. This demonstrated that the system could be tuned to an optimal on/off ratio regime by separately controlling the gates. These findings provide a valuable reference point for the further development of FETs based on graphene heterostructures.
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Submitted 12 July, 2024; v1 submitted 10 May, 2024;
originally announced May 2024.
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Robust field-free switching using large unconventional spin-orbit torque in an all-van der Waals heterostructure
Authors:
Yiyang Zhang,
Xiaolin Ren,
Ruizi Liu,
Zehan Chen,
Xuezhao Wu,
Jie Pang,
Wei Wang,
Guibin Lan,
Kenji Watanabe,
Takashi Taniguchi,
Youguo Shi,
Guoqiang Yu,
Qiming Shao
Abstract:
The emerging all-van der Waals (vdW) magnetic heterostructure provides a new platform to control the magnetization by the electric field beyond the traditional spintronics devices. One promising strategy is using unconventional spin-orbit torque (SOT) exerted by the out-of-plane polarized spin current to enable deterministic magnetization switching and enhance the switching efficiency. However, in…
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The emerging all-van der Waals (vdW) magnetic heterostructure provides a new platform to control the magnetization by the electric field beyond the traditional spintronics devices. One promising strategy is using unconventional spin-orbit torque (SOT) exerted by the out-of-plane polarized spin current to enable deterministic magnetization switching and enhance the switching efficiency. However, in all-vdW heterostructures, large unconventional SOT remains elusive and the robustness of the field-free switching against external magnetic field hasn't been examined, which hinder further applications. Here we demonstrate the field-free switching in an all-vdW heterostructure combining a type-II Weyl semimetal TaIrTe4 and above-room-temperature ferromagnet Fe3GaTe2. The fully field-free switching can be achieved at 2.56 x 10^10 A per m2 at 300K and a large SOT efficiency of the out-of-plane polarized spin current generated by TaIrTe4 is determined to be 0.37. Moreover, we find that the switching polarity cannot be changed until the external in-plane magnetic field reaches 252mT, indicating a robust switching against the magnetic field. The numerical simulation suggests the large unconventional SOT reduces the switching current density and enhances the robustness of the switching. Our work shows that all-vdW heterostructures are promising candidates for future highly efficient and stable SOT-based devices.
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Submitted 10 May, 2024;
originally announced May 2024.
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Topological flat bands in a family of multilayer graphene moiré lattices
Authors:
Dacen Waters,
Ruiheng Su,
Ellis Thompson,
Anna Okounkova,
Esmeralda Arreguin-Martinez,
Minhao He,
Katherine Hinds,
Kenji Watanabe,
Takashi Taniguchi,
Xiaodong Xu,
Ya-Hui Zhang,
Joshua Folk,
Matthew Yankowitz
Abstract:
Moiré materials host a wealth of intertwined correlated and topological states of matter, all arising from flat electronic bands with nontrivial quantum geometry. A prominent example is the family of alternating-twist magic-angle graphene stacks, which exhibit symmetry-broken states at rational fillings of the moiré band and superconductivity close to half filling. Here, we introduce a second fami…
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Moiré materials host a wealth of intertwined correlated and topological states of matter, all arising from flat electronic bands with nontrivial quantum geometry. A prominent example is the family of alternating-twist magic-angle graphene stacks, which exhibit symmetry-broken states at rational fillings of the moiré band and superconductivity close to half filling. Here, we introduce a second family of twisted graphene multilayers made up of twisted sheets of $M$- and $N$-layer Bernal-stacked graphene flakes. Calculations indicate that applying an electric displacement field isolates a flat and topological moiré conduction band that is primarily localized to a single graphene sheet below the moiré interface. Phenomenologically, the result is a striking similarity in the hierarchies of symmetry-broken phases across this family of twisted graphene multilayers. Our results show that this family of structures offers promising new opportunities for the discovery of exotic new correlated and topological phenomena, enabled by using the layer number to fine tune the flat moiré band and its screening environment.
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Submitted 9 May, 2024;
originally announced May 2024.
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Tunable superconductivity in electron- and hole-doped Bernal bilayer graphene
Authors:
Chushan Li,
Fan Xu,
Bohao Li,
Jiayi Li,
Guoan Li,
Kenji Watanabe,
Takashi Taniguchi,
Bingbing Tong,
Jie Shen,
Li Lu,
Jinfeng Jia,
Fengcheng Wu,
Xiaoxue Liu,
Tingxin Li
Abstract:
Graphene-based, high quality two-dimensional electronic systems have emerged as a highly tunable platform for studying superconductivity. Specifically, superconductivity has been observed in both electron-doped and hole-doped twisted graphene moire systems, whereas in crystalline graphene systems, superconductivity has so far only been observed in hole-doped rhombohedral trilayer and hole-doped Be…
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Graphene-based, high quality two-dimensional electronic systems have emerged as a highly tunable platform for studying superconductivity. Specifically, superconductivity has been observed in both electron-doped and hole-doped twisted graphene moire systems, whereas in crystalline graphene systems, superconductivity has so far only been observed in hole-doped rhombohedral trilayer and hole-doped Bernal bilayer graphene (BBG). Recently, enhanced superconductivity has been demonstrated in BBG due to the proximity with a monolayer WSe2. Here, we report the observation of superconductivity and a series of flavor-symmetry-breaking phases in both electron- and hole-doped BBG/WSe2 device by electrostatic doping. The strength of the observed superconductivity is tunable by applied vertical electric fields. The maximum Berezinskii-Kosterlitz-Thouless (BKT) transition temperature for the electron- and hole-doped superconductivity is about 210 mK and 400 mK, respectively. Superconductivities emerge only when applied electric fields drive BBG electron or hole wavefunctions toward the WSe2 layer, underscoring the importance of the WSe2 layer in the observed superconductivity. We find the hole-doped superconductivity violates the Pauli paramagnetic limit, consistent with an Ising-like superconductor. In contrast, the electron-doped superconductivity obeys the Pauli limit, even though the proximity induced Ising spin-orbit coupling is also notable in the conduction band. Our findings highlight the rich physics associated with the conduction band in BBG, paving the way for further studies into the superconducting mechanisms of crystalline graphene and the development of novel superconductor devices based on BBG.
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Submitted 7 May, 2024;
originally announced May 2024.
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Quadratic varieties of small codimension
Authors:
Kiwamu Watanabe
Abstract:
Let $X \subset \mathbb P^{n+c}$ be a nondegenerate smooth projective variety of dimension $n$ defined by quadratic equations. For such varieties, P. Ionescu and F. Russo proved the Hartshorne conjecture on complete intersections, which states that X is a complete intersection provided that $n\geq 2c+1$. As the extremal case, they also classified $X$ with $n=2c$. In this paper, we classify $X$ with…
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Let $X \subset \mathbb P^{n+c}$ be a nondegenerate smooth projective variety of dimension $n$ defined by quadratic equations. For such varieties, P. Ionescu and F. Russo proved the Hartshorne conjecture on complete intersections, which states that X is a complete intersection provided that $n\geq 2c+1$. As the extremal case, they also classified $X$ with $n=2c$. In this paper, we classify $X$ with $n=2c-1$.
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Submitted 7 May, 2024;
originally announced May 2024.
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Anomalous Gate-tunable Capacitance in Graphene Moiré Heterostructures
Authors:
Linshang Chen,
Haoran Long,
Heng Wu,
Rui Mei,
Zhengyu Su,
Mengjie Feng,
Jiang-Bin Wu,
Kenji Watanabe,
Takashi Taniguchi,
Xuewei Cao,
Zhongming Wei,
Ping-Heng Tan,
Yanmeng Shi
Abstract:
Interface engineered ferroelectricity in van der Waals heterostructures is of broad interest both fundamentally and technologically for the applications in neuromorphic computing and so on. In particular, the moiré ferroelectricity in graphene/hexagonal boron nitride (hBN) heterostructures driven by charge ordering instead of traditional lattice displacement has drawn considerable attention becaus…
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Interface engineered ferroelectricity in van der Waals heterostructures is of broad interest both fundamentally and technologically for the applications in neuromorphic computing and so on. In particular, the moiré ferroelectricity in graphene/hexagonal boron nitride (hBN) heterostructures driven by charge ordering instead of traditional lattice displacement has drawn considerable attention because of its fascinating properties and promising high-frequency programmable electrical polarization switching. Yet, the underlying mechanism of the electronic ferroelectricity is still under debate. On the other hand, combining the interface engineered ferroelectricity and strong correlations in moiré heterostructures could enable the realization of novel quantum states such as ferroelectric superconductivity and multiferroicity. Here we study the electronic transport properties of twisted double bilayer graphene (TDBLG), aligned with one of the neighbouring hBN. We observe a strong gating hysteresis and ferroelectric-like behaviour, as well as the electronic ratchet effect. We find that the top gate is anomalously screened. On the contrary, the back gate is anomalously doubly efficient in injecting charges into graphene, that is, the effective back gate capacitance is two times larger than its geometry capacitance. This unexpected gate-tunable capacitance causes a dramatic change of electric fields between forward and backward scans. The asymmetric gating behaviours and anomalous change in capacitance could be explained with a simple model involved with a spontaneous electric polarization between top hBN and graphene. Our work provides more insights into the mysterious ferroelectricity in graphene/hBN moiré heterostructures and paves the way to the understanding of the underlying mechanism.
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Submitted 6 May, 2024;
originally announced May 2024.
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A Design Method of an Ultra-Wideband and Easy-to-Array Magic-T: A 6-14 GHz Scaled Model for a mm/submm Camera
Authors:
Shuhei Inoue,
Kah Wuy Chin,
Shinsuke Uno,
Kotaro Kohno,
Yuka Niwa,
Toyo Naganuma,
Ryosuke Yamamura,
Kazuki Watanabe,
Tatsuya Takekoshi,
Tai Oshima
Abstract:
We established a design method for a Magic-T with a single-layer dielectric/metal structure suitable for both wideband and multi-element applications for millimeter and submillimeter wave imaging observations. The design method was applied to a Magic-T with a coupled-line, stubs, and single-stage impedance transformers in a frequency-scaled model (6-14 GHz) that is relatively easy to demonstrate t…
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We established a design method for a Magic-T with a single-layer dielectric/metal structure suitable for both wideband and multi-element applications for millimeter and submillimeter wave imaging observations. The design method was applied to a Magic-T with a coupled-line, stubs, and single-stage impedance transformers in a frequency-scaled model (6-14 GHz) that is relatively easy to demonstrate through manufacturing and evaluation. The major problem is that using the conventional perfect matching condition for a coupled-line alone produces an impractically large width coplanar coupled-line (CPCL) to satisfy the desired bandwidth ratio. In our study, by removing this constraint and optimizing impedances utilizing a circuit simulator with high computation speed, we found a solution with a $\sim$ 180 $\rm μ$m wide CPCL, which is approximately an order of magnitude smaller than the conventional analytical solution. Furthermore, considering the effect of transition discontinuities in the transmission lines, we optimized the line length and obtained a design solution with return loss < -20 dB, amplitude imbalance < 0.1 dB, and phase imbalance < 0.5$^\circ$ from 6.1 GHz to 14.1 GHz.
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Submitted 25 May, 2024; v1 submitted 6 May, 2024;
originally announced May 2024.
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Band structure engineering using a moiré polar substrate
Authors:
Xirui Wang,
Cheng Xu,
Samuel Aronson,
Daniel Bennett,
Nisarga Paul,
Philip J. D. Crowley,
Clément Collignon,
Kenji Watanabe,
Takashi Taniguchi,
Raymond Ashoori,
Efthimios Kaxiras,
Yang Zhang,
Pablo Jarillo-Herrero,
Kenji Yasuda
Abstract:
Applying long wavelength periodic potentials on quantum materials has recently been demonstrated to be a promising pathway for engineering novel quantum phases of matter. Here, we utilize twisted bilayer boron nitride (BN) as a moiré substrate for band structure engineering. Small-angle-twisted bilayer BN is endowed with periodically arranged up and down polar domains, which imprints a periodic el…
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Applying long wavelength periodic potentials on quantum materials has recently been demonstrated to be a promising pathway for engineering novel quantum phases of matter. Here, we utilize twisted bilayer boron nitride (BN) as a moiré substrate for band structure engineering. Small-angle-twisted bilayer BN is endowed with periodically arranged up and down polar domains, which imprints a periodic electrostatic potential on a target two-dimensional (2D) material placed on top. As a proof of concept, we use Bernal bilayer graphene as the target material. The resulting modulation of the band structure appears as superlattice resistance peaks, tunable by varying the twist angle, and Hofstadter butterfly physics under a magnetic field. Additionally, we demonstrate the tunability of the moiré potential by altering the dielectric thickness underneath the twisted BN. Finally, we find that near-60°-twisted bilayer BN provides a unique platform for studying the moiré structural effect without the contribution from electrostatic moiré potentials. Tunable moiré polar substrates may serve as versatile platforms to engineer the electronic, optical, and mechanical properties of 2D materials and van der Waals heterostructures.
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Submitted 6 May, 2024;
originally announced May 2024.
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Exploring nonequilibrium Andreev resonances in ultraclean graphene Andreev interferometers
Authors:
Asmaul Smitha Rashid,
Le Yi,
Takashi Taniguchi,
Kenji Watanabe,
Nitin Samarth,
Régis Mélin,
Morteza Kayyalha
Abstract:
We study nonequilibrium Andreev resonances in a voltage-biased graphene three-terminal Josephson junction (JJ). We observe periodic oscillations of resistance with maxima at multiples of the magnetic flux quantum (noninversion regime). As we increase the bias voltage, we further observe a transition point beyond which oscillations exhibit a $π$ phase shift (inversion regime) with maxima of resista…
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We study nonequilibrium Andreev resonances in a voltage-biased graphene three-terminal Josephson junction (JJ). We observe periodic oscillations of resistance with maxima at multiples of the magnetic flux quantum (noninversion regime). As we increase the bias voltage, we further observe a transition point beyond which oscillations exhibit a $π$ phase shift (inversion regime) with maxima of resistance occuring at multiples of half-flux quantum. At this transition point, the frequency of the oscillations is doubled. We develop a model based on the coupling of the static Andreev bound states (ABSs) to the nonequilibrium Fermi surface of graphene to explain the observed noninversion to inversion crossovers. Our model associates these crossovers to microscopic phase-sensitive Andreev reflections which couple the normal and superfluid components of the current. Our findings show that multiterminal JJs can be used to engineer unconventional energy-phase relations such as those expected in the $π$-shifted ABSs without relying on quartet and Floquet physics. These nonequilibrium ABSs could potentially find applications in superconducting $π$ qubits.
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Submitted 14 May, 2024; v1 submitted 5 May, 2024;
originally announced May 2024.
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Strong He I Emission Lines in High N/O Galaxies at $z \sim 6$ Identified in JWST Spectra: High He/H Abundance Ratios or High Electron Densities?
Authors:
Hiroto Yanagisawa,
Masami Ouchi,
Kuria Watanabe,
Akinori Matsumoto,
Kimihiko Nakajima,
Hidenobu Yajima,
Kentaro Nagamine,
Koh Takahashi,
Minami Nakane,
Nozomu Tominaga,
Hiroya Umeda,
Hajime Fukushima,
Yuichi Harikane,
Yuki Isobe,
Yoshiaki Ono,
Yi Xu,
Yechi Zhang
Abstract:
We present HeI/H$β$-flux and He/H-abundance ratios in three JWST galaxies with significant constraints on N/O-abundance ratios, GS-NDG-9422, RXCJ2248-ID, and GLASS150008 at $z\sim 6$ mostly with the spectroscopic coverage from HeI$λ$4471 and HeII$λ$4686 to HeI$λ$7065, comparing with 68 local-dwarf galaxies. We find that these high-$z$ galaxies present strong HeI emission with HeI/H$β$ flux ratios…
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We present HeI/H$β$-flux and He/H-abundance ratios in three JWST galaxies with significant constraints on N/O-abundance ratios, GS-NDG-9422, RXCJ2248-ID, and GLASS150008 at $z\sim 6$ mostly with the spectroscopic coverage from HeI$λ$4471 and HeII$λ$4686 to HeI$λ$7065, comparing with 68 local-dwarf galaxies. We find that these high-$z$ galaxies present strong HeI emission with HeI/H$β$ flux ratios generally larger than those of local-dwarf galaxies. We derive He/H with all of the detected HeI, HeII, and $2-3$ hydrogen Balmer lines in the same manner as the local He/H determination conducted for cosmology studies. These high-$z$ galaxies show He overabundance He/H$\gtrsim 0.10$ or high electron density $n_\mathrm{e}\sim 10^{3-4}$ cm$^{-3}$ much larger than local values at low O/H, $12+\log \mathrm{(O/H)}=7-8$. In contrast, we obtain low He/H and $n_\mathrm{e}$ values for our local-dwarf galaxies by the same technique with the same helium and hydrogen lines, and confirm that the difference between the high-$z$ and local-dwarf galaxies are not mimicked by systematics. While two scenarios of 1) He overabundance and 2) high electron density are not clearly concluded, we find that there is a positive correlation on the He/H-N/O or $n_\mathrm{e}$-N/O plane by the comparison of the high-$z$ and local-dwarf galaxies. The scenario 1) suggests that the overabundant helium and nitrogen are not explained by the standard chemical enrichment of core-collapse supernovae, but the CNO-cycle products and equilibrium ratios, respectively. The scenario 2) indicates that the strong helium lines are originated from the central dense clouds of the high-$z$ galaxies by excessive collisional excitation.
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Submitted 2 May, 2024;
originally announced May 2024.
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Optimal Planning for Timed Partial Order Specifications
Authors:
Kandai Watanabe,
Georgios Fainekos,
Bardh Hoxha,
Morteza Lahijanian,
Hideki Okamoto,
Sriram Sankaranarayanan
Abstract:
This paper addresses the challenge of planning a sequence of tasks to be performed by multiple robots while minimizing the overall completion time subject to timing and precedence constraints. Our approach uses the Timed Partial Orders (TPO) model to specify these constraints. We translate this problem into a Traveling Salesman Problem (TSP) variant with timing and precedent constraints, and we so…
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This paper addresses the challenge of planning a sequence of tasks to be performed by multiple robots while minimizing the overall completion time subject to timing and precedence constraints. Our approach uses the Timed Partial Orders (TPO) model to specify these constraints. We translate this problem into a Traveling Salesman Problem (TSP) variant with timing and precedent constraints, and we solve it as a Mixed Integer Linear Programming (MILP) problem. Our contributions include a general planning framework for TPO specifications, a MILP formulation accommodating time windows and precedent constraints, its extension to multi-robot scenarios, and a method to quantify plan robustness. We demonstrate our framework on several case studies, including an aircraft turnaround task involving three Jackal robots, highlighting the approach's potential applicability to important real-world problems. Our benchmark results show that our MILP method outperforms state-of-the-art open-source TSP solvers OR-Tools.
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Submitted 8 March, 2024;
originally announced May 2024.
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Small Instanton Effects on Composite Axion Mass
Authors:
Takafumi Aoki,
Masahiro Ibe,
Satoshi Shirai,
Keiichi Watanabe
Abstract:
This paper investigates the impact of small instanton effects on the axion mass in composite axion models. In particular, we focus on the Composite Accidental Axion (CAA) models, which are designed to address the axion quality problem, and where the Peccei-Quinn (PQ) symmetry emerges accidentally. In the CAA models, the QCD gauge symmetry is embedded in a larger gauge group at high energy. These m…
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This paper investigates the impact of small instanton effects on the axion mass in composite axion models. In particular, we focus on the Composite Accidental Axion (CAA) models, which are designed to address the axion quality problem, and where the Peccei-Quinn (PQ) symmetry emerges accidentally. In the CAA models, the QCD gauge symmetry is embedded in a larger gauge group at high energy. These models contain small instantons not included in low-energy QCD, which could enhance the axion mass significantly. However, in the CAA models, our analysis reveals that these effects on the axion mass are non-vanishing but are negligible compared to the QCD effects. The suppression of the small instanton effects originates from the global chiral U(1) symmetries which are not broken spontaneously and play a crucial role in eliminating $θ$-terms in the hidden sectors through anomalies. We find these U(1) symmetries restrict the impact of small instantons in hidden sectors on the axion mass. Our study provides crucial insights into the dynamics within the CAA models and suggests broader implications for understanding small instanton effects in other composite axion models.
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Submitted 19 July, 2024; v1 submitted 30 April, 2024;
originally announced April 2024.
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Tunable exciton valley-pseudospin orders in moiré Bose-Hubbard model
Authors:
Richen Xiong,
Samuel L. Brantly,
Kaixiang Su,
Jacob H. Nie,
Zihan Zhang,
Rounak Banerjee,
Hayley Ruddick,
Kenji Watanabe,
Takashi Taniguchi,
Sefaattin Tongay,
Cenke Xu,
Chenhao Jin
Abstract:
Spin and charge are the two most important degrees of freedom of electrons. Their interplay lies at the heart of numerous strongly correlated phenomena including Hubbard model physics and high temperature superconductivity. Such interplay for bosons, on the other hand, is largely unexplored in condensed matter systems. Here we demonstrate a unique realization of the spin-1/2 Bose-Hubbard model thr…
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Spin and charge are the two most important degrees of freedom of electrons. Their interplay lies at the heart of numerous strongly correlated phenomena including Hubbard model physics and high temperature superconductivity. Such interplay for bosons, on the other hand, is largely unexplored in condensed matter systems. Here we demonstrate a unique realization of the spin-1/2 Bose-Hubbard model through excitons in a semiconducting moiré superlattice. We find evidence of a transient in-plane ferromagnetic (FM-$xy$) order of exciton spin - here valley pseudospin - around exciton filling $ν_{ex}$ = 1, which transitions into a FM-$z$ order both with increasing exciton filling and a small magnetic field of 10 mT. The phase diagram is different from the fermion case and is qualitatively captured by a simple phenomenological model, highlighting the unique consequence of Bose-Einstein statistics. Our study paves the way for engineering exotic phases of matter from spinor bosons, as well as for unconventional devices in optics and quantum information science.
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Submitted 3 May, 2024; v1 submitted 29 April, 2024;
originally announced April 2024.
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Electrically tunable layer-hybridized trions in doped WSe$_2$ bilayers
Authors:
Raul Perea-Causin,
Samuel Brem,
Fabian Buchner,
Kenji Watanabe,
Takashi Taniguchi,
John M. Lupton,
Kai-Qiang Lin,
Ermin Malic
Abstract:
Doped van der Waals heterostructures host layer-hybridized trions, i.e. charged excitons with layer-delocalized constituents holding promise for highly controllable optoelectronics. Combining a microscopic theory with photoluminescence (PL) experiments, we demonstrate the electrical tunability of the trion energy landscape in naturally stacked WSe$_2$ bilayers. We show that an out-of-plane electri…
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Doped van der Waals heterostructures host layer-hybridized trions, i.e. charged excitons with layer-delocalized constituents holding promise for highly controllable optoelectronics. Combining a microscopic theory with photoluminescence (PL) experiments, we demonstrate the electrical tunability of the trion energy landscape in naturally stacked WSe$_2$ bilayers. We show that an out-of-plane electric field modifies the energetic ordering of the lowest lying trion states, which consist of layer-hybridized $Λ$-point electrons and layer-localized K-point holes. At small fields, intralayer-like trions yield distinct PL signatures in opposite doping regimes characterized by weak Stark shifts in both cases. Above a doping-asymmetric critical field, interlayer-like species are energetically favored and produce PL peaks with a pronounced Stark red-shift and a counter-intuitively large intensity arising from efficient phonon-assisted recombination. Our work presents an important step forward in the microscopic understanding of layer-hybridized trions in van der Waals heterostructures and paves the way towards optoelectronic applications based on electrically controllable atomically-thin semiconductors.
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Submitted 29 April, 2024;
originally announced April 2024.
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Gate control of 2D magnetism in tri- and four-layers $\rm CrI_3$/graphene heterostructures
Authors:
Ping Wang,
Fuzhuo Lian,
Renjun Du,
Xiaofan Cai,
Song Bao,
Yaqing Han,
Jingkuan Xiao,
Kenji Watanabe,
Takashi Taniguchi,
Jinsheng Wen,
Hongxin Yang,
Alexander S. Mayorov,
Lei Wang,
Geliang Yu
Abstract:
We conduct experimental studies on the electrical transport properties of monolayer graphene directly covered by a few layers of $\rm CrI_3$. We do not observe the expected magnetic exchange coupling in the graphene but instead discover proximity effects featuring gate and magnetic field tunability. The tunability of gate voltage is manifested in the alignment of the lowest conduction band of…
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We conduct experimental studies on the electrical transport properties of monolayer graphene directly covered by a few layers of $\rm CrI_3$. We do not observe the expected magnetic exchange coupling in the graphene but instead discover proximity effects featuring gate and magnetic field tunability. The tunability of gate voltage is manifested in the alignment of the lowest conduction band of $\rm CrI_3$ and the Fermi level of graphene, which can be controlled by the gate voltage. The coexistence of the normal and atypical quantum Hall effects in our device also corresponds to gate-control modulation doping. The lowest conduction band depends on the magnetic states of the $\rm CrI_3$ and can be altered by the magnetic field, which corresponds to the resistance loops during back-and-forth sweeps of the magnetic field. Our results serve as a reference for exploiting the magnetic proximity effects in graphene.
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Submitted 27 April, 2024;
originally announced April 2024.
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Ferroelectricity in twisted double bilayer graphene
Authors:
Renjun Du,
Jingkuan Xiao,
Di Zhang,
Xiaofan Cai,
Siqi Jiang,
Fuzhuo Lian,
Kenji Watanabe,
Takashi Taniguchi,
Lei Wang,
Geliang Yu
Abstract:
Two-dimensional ferroelectrics can maintain vertical polarization up to room temperature, and are, therefore, promising for next-generation nonvolatile memories. Although natural two-dimensional ferroelectrics are few, moiré superlattices provide us with a generalized method to construct ferroelectrics from non-ferroelectric parent materials. We report a realization of ferroelectric hysteresis in…
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Two-dimensional ferroelectrics can maintain vertical polarization up to room temperature, and are, therefore, promising for next-generation nonvolatile memories. Although natural two-dimensional ferroelectrics are few, moiré superlattices provide us with a generalized method to construct ferroelectrics from non-ferroelectric parent materials. We report a realization of ferroelectric hysteresis in a AB-BA stacked twisted double bilayer graphene (TDBG) system. The ferroelectric polarization is prominent at zero external displacement field and reduces upon increasing displacement fields. TDBG in the AB-BA configuration possesses a superlattice of non-centrosymmetric domains, exhibiting alternatively switchable polarities even without the assistance of any boron nitride layers; however, in the AB-AB stacking case, the development of polarized domains necessitates the presence of a second superlattice induced by the adjacent boron nitride layer. Therefore, twisted multilayer graphene systems offer us a fascinating field to explore two-dimensional ferroelectricity.
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Submitted 27 April, 2024;
originally announced April 2024.
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Unbiased Estimating Equation on Inverse Divergence and Its Conditions
Authors:
Masahiro Kobayashi,
Kazuho Watanabe
Abstract:
This paper focuses on the Bregman divergence defined by the reciprocal function, called the inverse divergence. For the loss function defined by the monotonically increasing function $f$ and inverse divergence, the conditions for the statistical model and function $f$ under which the estimating equation is unbiased are clarified. Specifically, we characterize two types of statistical models, an in…
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This paper focuses on the Bregman divergence defined by the reciprocal function, called the inverse divergence. For the loss function defined by the monotonically increasing function $f$ and inverse divergence, the conditions for the statistical model and function $f$ under which the estimating equation is unbiased are clarified. Specifically, we characterize two types of statistical models, an inverse Gaussian type and a mixture of generalized inverse Gaussian type distributions, to show that the conditions for the function $f$ are different for each model. We also define Bregman divergence as a linear sum over the dimensions of the inverse divergence and extend the results to the multi-dimensional case.
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Submitted 25 April, 2024;
originally announced April 2024.
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Imaging Tunable Luttinger Liquid Systems in van der Waals Heterostructures
Authors:
Hongyuan Li,
Ziyu Xiang,
Tianle Wang,
Mit H. Naik,
Woochang Kim,
Jiahui Nie,
Shiyu Li,
Zhehao Ge,
Zehao He,
Yunbo Ou,
Rounak Banerjee,
Takashi Taniguchi,
Kenji Watanabe,
Sefaattin Tongay,
Alex Zettl,
Steven G. Louie,
Michael P. Zaletel,
Michael F. Crommie,
Feng Wang
Abstract:
One-dimensional (1D) interacting electrons are often described as a Luttinger liquid1-4 having properties that are intrinsically different from Fermi liquids in higher dimensions5,6. 1D electrons in materials systems exhibit exotic quantum phenomena that can be tuned by both intra- and inter-1D-chain electronic interactions, but their experimental characterization can be challenging. Here we demon…
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One-dimensional (1D) interacting electrons are often described as a Luttinger liquid1-4 having properties that are intrinsically different from Fermi liquids in higher dimensions5,6. 1D electrons in materials systems exhibit exotic quantum phenomena that can be tuned by both intra- and inter-1D-chain electronic interactions, but their experimental characterization can be challenging. Here we demonstrate that layer-stacking domain walls (DWs) in van der Waals heterostructures form a broadly tunable Luttinger liquid system including both isolated and coupled arrays. We have imaged the evolution of DW Luttinger liquids under different interaction regimes tuned by electron density using a novel scanning tunneling microscopy (STM) technique. Single DWs at low carrier density are highly susceptible to Wigner crystallization consistent with a spin-incoherent Luttinger liquid, while at intermediate densities dimerized Wigner crystals form due to an enhanced magneto-elastic coupling. Periodic arrays of DWs exhibit an interplay between intra- and inter-chain interactions that gives rise to new quantum phases. At low electron densities inter-chain interactions are dominant and induce a 2D electron crystal composed of phased-locked 1D Wigner crystal in a staggered configuration. Increased electron density causes intra-chain fluctuation potentials to dominate, leading to an electronic smectic liquid crystal phase where electrons are ordered with algebraical correlation decay along the chain direction but disordered between chains. Our work shows that layer-stacking DWs in 2D heterostructures offers new opportunities to explore Luttinger liquid physics.
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Submitted 25 April, 2024;
originally announced April 2024.
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Motion of 2D exciton in momentum space leads to pseudospin distribution narrowing on the Bloch Sphere
Authors:
Garima Gupta,
Kenji Watanabe,
Takashi Taniguchi,
Kausik Majumdar
Abstract:
Motional narrowing implies narrowing induced by motion, for example, in nuclear resonance, the thermally induced random motion of the nuclei in an inhomogeneous environment leads to counter-intuitive narrowing of the resonance line. Similarly, the excitons in monolayer semiconductors experience magnetic inhomogeneity: the electron-hole spin-exchange interaction manifests as an in-plane pseudo-magn…
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Motional narrowing implies narrowing induced by motion, for example, in nuclear resonance, the thermally induced random motion of the nuclei in an inhomogeneous environment leads to counter-intuitive narrowing of the resonance line. Similarly, the excitons in monolayer semiconductors experience magnetic inhomogeneity: the electron-hole spin-exchange interaction manifests as an in-plane pseudo-magnetic field with a periodically varying orientation inside the exciton band. The excitons undergo random momentum scattering and pseudospin precession repeatedly in this inhomogeneous magnetic environment - typically resulting in fast exciton depolarization. On the contrary, we show that such magnetic inhomogeneity averages out at high scattering rate due to motional narrowing. Physically, a faster exciton scattering leads to a narrower pseudospin distribution on the Bloch sphere, implying a nontrivial improvement in exciton polarization. The in-plane nature of the pseudo-magnetic field enforces a contrasting scattering dependence between the circularly and linearly polarized excitons - providing a spectroscopic way to gauge the sample quality.
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Submitted 23 April, 2024;
originally announced April 2024.
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On Gorensteiness of associated graded rings of filtrations
Authors:
Meghana Bhat,
Saipriya Dubey,
Shreedevi K. Masuti,
Tomohiro Okuma,
Jugal K. Verma,
Kei-ichi Watanabe,
Ken-ichi Yoshida
Abstract:
Let $(A, \mathfrak{m})$ be a Gorenstein local ring, and $\mathcal{F} =\{F_n \}_{n\in \mathbb{Z}}$ a Hilbert filtration. In this paper, we give a criterion for Gorensteinness of the associated graded ring of $\mathcal{F}$ in terms of the Hilbert coefficients of $\mathcal{F}$ in some cases. As a consequence we recover and extend a result proved by Okuma, Watanabe and Yoshida. Further, we present rin…
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Let $(A, \mathfrak{m})$ be a Gorenstein local ring, and $\mathcal{F} =\{F_n \}_{n\in \mathbb{Z}}$ a Hilbert filtration. In this paper, we give a criterion for Gorensteinness of the associated graded ring of $\mathcal{F}$ in terms of the Hilbert coefficients of $\mathcal{F}$ in some cases. As a consequence we recover and extend a result proved by Okuma, Watanabe and Yoshida. Further, we present ring-theoretic properties of the normal tangent cone of the maximal ideal of $A=S/(f)$ where $S=K[\![x_0,x_1,\ldots, x_m]\!]$ is a formal power series ring over an algebraically closed field $K$, and $f=x_0^a-g(x_1,\ldots,x_m)$, where $g$ is a polynomial with $g \in (x_1,\ldots,x_m)^b \setminus (x_1,\ldots,x_m)^{b+1}$, and $a, \, b, \, m$ are integers. We show that the normal tangent cone $\overline{G}(\mathfrak{m})$ is Cohen-Macaulay if $A$ is normal and $a \le b$. Moreover, we give a criterion of the Gorensteinness of $\overline{G}(\mathfrak{m})$.
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Submitted 22 April, 2024;
originally announced April 2024.
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Tuning exciton emission via ferroelectric polarization at a heterogeneous interface between a monolayer transition metal dichalcogenide and a perovskite oxide membrane
Authors:
Jaehong Choi,
Kevin J. Crust,
Lizhong Li,
Kihong Lee,
Jialun Luo,
Jae-Pil So,
Kenji Watanabe,
Takashi Taniguchi,
Harold Y. Hwang,
Kin Fai Mak,
Jie Shan,
Gregory D. Fuchs
Abstract:
We demonstrate the integration of a thin BaTiO$_3$ (BTO) membrane with monolayer MoSe$_2$ in a dual gate device that enables in-situ manipulation of the BTO ferroelectric polarization with a voltage pulse. While two-dimensional (2D) transition metal dichalcogenides (TMDs) offer remarkable adaptability, their hybrid integration with other families of functional materials beyond the realm of 2D mate…
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We demonstrate the integration of a thin BaTiO$_3$ (BTO) membrane with monolayer MoSe$_2$ in a dual gate device that enables in-situ manipulation of the BTO ferroelectric polarization with a voltage pulse. While two-dimensional (2D) transition metal dichalcogenides (TMDs) offer remarkable adaptability, their hybrid integration with other families of functional materials beyond the realm of 2D materials has been challenging. Released functional oxide membranes offer a solution for 2D/3D integration via stacking. 2D TMD excitons can serve as a local probe of the ferroelectric polarization in BTO at a heterogeneous interface. Using photoluminescence (PL) of MoSe$_2$ excitons to optically readout the doping level, we find that the relative population of charge carriers in MoSe$_2$ depends sensitively on the ferroelectric polarization. This finding points to a promising avenue for future-generations versatile sensing devices with high sensitivity, fast read-out, and diverse applicability for advanced signal processing.
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Submitted 18 April, 2024;
originally announced April 2024.
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Observation of Cooper-pair density modulation state
Authors:
Lingyuan Kong,
Michał Papaj,
Hyunjin Kim,
Yiran Zhang,
Eli Baum,
Hui Li,
Kenji Watanabe,
Takashi Taniguchi,
Genda Gu,
Patrick A. Lee,
Stevan Nadj-Perge
Abstract:
Superconducting states that break space-group symmetries of the underlying crystal can exhibit nontrivial spatial modulation of the order parameter. Previously, such remarkable states were intimately associated with the breaking of translational symmetry, giving rise to the density-wave orders, with wavelengths spanning several unit cells. However, a related basic concept has been long overlooked:…
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Superconducting states that break space-group symmetries of the underlying crystal can exhibit nontrivial spatial modulation of the order parameter. Previously, such remarkable states were intimately associated with the breaking of translational symmetry, giving rise to the density-wave orders, with wavelengths spanning several unit cells. However, a related basic concept has been long overlooked: when only intra-unit-cell symmetries of the space group are broken, the superconducting states can display a distinct type of nontrivial modulation preserving long-range lattice translation. Here, we refer to this new concept as the pair density modulation (PDM), and report the first observation of a PDM state in exfoliated thin flakes of iron-based superconductor FeTe$_{\text{0.55}}$Se$_{\text{0.45}}$. Using scanning tunneling microscopy, we discover robust superconducting gap modulation with the wavelength corresponding to the lattice periodicity and the amplitude exceeding 30% of the gap average. Importantly, we find that the observed modulation originates from the large difference in superconducting gaps on the two nominally equivalent iron sublattices. The experimental findings, backed up by model calculations, suggest that in contrast to the density-wave orders, the PDM state is driven by the interplay of sublattice symmetry breaking and a peculiar nematic distortion specific to the thin flakes. Our results establish new frontiers for exploring the intertwined orders in strong-correlated electronic systems and open a new chapter for iron-based superconductors.
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Submitted 15 April, 2024;
originally announced April 2024.
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Combined Pre-Supernova Alert System with Kamland and Super-Kamiokande
Authors:
KamLAND,
Super-Kamiokande Collaborations,
:,
Seisho Abe,
Minori Eizuka,
Sawako Futagi,
Azusa Gando,
Yoshihito Gando,
Shun Goto,
Takahiko Hachiya,
Kazumi Hata,
Koichi Ichimura,
Sei Ieki,
Haruo Ikeda,
Kunio Inoue,
Koji Ishidoshiro,
Yuto Kamei,
Nanami Kawada,
Yasuhiro Kishimoto,
Masayuki Koga,
Maho Kurasawa,
Tadao Mitsui,
Haruhiko Miyake,
Daisuke Morita,
Takeshi Nakahata
, et al. (290 additional authors not shown)
Abstract:
Preceding a core-collapse supernova, various processes produce an increasing amount of neutrinos of all flavors characterized by mounting energies from the interior of massive stars. Among them, the electron antineutrinos are potentially detectable by terrestrial neutrino experiments such as KamLAND and Super-Kamiokande via inverse beta decay interactions. Once these pre-supernova neutrinos are ob…
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Preceding a core-collapse supernova, various processes produce an increasing amount of neutrinos of all flavors characterized by mounting energies from the interior of massive stars. Among them, the electron antineutrinos are potentially detectable by terrestrial neutrino experiments such as KamLAND and Super-Kamiokande via inverse beta decay interactions. Once these pre-supernova neutrinos are observed, an early warning of the upcoming core-collapse supernova can be provided. In light of this, KamLAND and Super-Kamiokande, both located in the Kamioka mine in Japan, have been monitoring pre-supernova neutrinos since 2015 and 2021, respectively. Recently, we performed a joint study between KamLAND and Super-Kamiokande on pre-supernova neutrino detection. A pre-supernova alert system combining the KamLAND detector and the Super-Kamiokande detector was developed and put into operation, which can provide a supernova alert to the astrophysics community. Fully leveraging the complementary properties of these two detectors, the combined alert is expected to resolve a pre-supernova neutrino signal from a 15 M$_{\odot}$ star within 510 pc of the Earth, at a significance level corresponding to a false alarm rate of no more than 1 per century. For a Betelgeuse-like model with optimistic parameters, it can provide early warnings up to 12 hours in advance.
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Submitted 1 July, 2024; v1 submitted 15 April, 2024;
originally announced April 2024.
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Double-dome Unconventional Superconductivity in Twisted Trilayer Graphene
Authors:
Zekang Zhou,
Jin Jiang,
Paritosh Karnatak,
Ziwei Wang,
Glenn Wagner,
Kenji Watanabe,
Takashi Taniguchi,
Christian Schönenberger,
S. A. Parameswaran,
Steven H. Simon,
Mitali Banerjee
Abstract:
Graphene moiré systems are ideal environments for investigating complex phase diagrams and gaining fundamental insights into the mechanisms underlying exotic states of matter, as they permit controlled manipulation of electronic properties. Magic-angle twisted trilayer graphene (MATTG) has emerged as a key platform to explore moiré superconductivity, owing to the robustness of its superconducting…
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Graphene moiré systems are ideal environments for investigating complex phase diagrams and gaining fundamental insights into the mechanisms underlying exotic states of matter, as they permit controlled manipulation of electronic properties. Magic-angle twisted trilayer graphene (MATTG) has emerged as a key platform to explore moiré superconductivity, owing to the robustness of its superconducting order and the displacement-field tunability of its energy bands. Recent measurements strongly suggest that superconductivity in MATTG is unconventional. Here, we report the first direct observation of double-dome superconductivity in MATTG. The temperature, magnetic field, and bias current dependence of the superconductivity of doped holes collectively show that it is significantly suppressed near moiré filling $ν^* = -2.6$, leading to a double dome in the phase diagram within a finite window of the displacement field. The temperature dependence of the normal-state resistance and the $I-V$ curves straddling $ν^*$ are suggestive of a phase transition and the potentially distinct nature of superconductivity in the two domes. Hartree-Fock calculations incorporating mild strain yield an incommensurate Kekulé spiral state whose effective spin polarization peaks in the regime where superconductivity is suppressed in experiments. This allows us to draw conclusions about the normal state as well as the unconventional nature of the superconducting order parameter.
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Submitted 15 April, 2024;
originally announced April 2024.
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Composing Codensity Bisimulations
Authors:
Mayuko Kori,
Kazuki Watanabe,
Jurriaan Rot,
Shin-ya Katsumata
Abstract:
Proving compositionality of behavioral equivalence on state-based systems with respect to algebraic operations is a classical and widely studied problem. We study a categorical formulation of this problem, where operations on state-based systems modeled as coalgebras can be elegantly captured through distributive laws between functors. To prove compositionality, it then suffices to show that this…
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Proving compositionality of behavioral equivalence on state-based systems with respect to algebraic operations is a classical and widely studied problem. We study a categorical formulation of this problem, where operations on state-based systems modeled as coalgebras can be elegantly captured through distributive laws between functors. To prove compositionality, it then suffices to show that this distributive law lifts from sets to relations, giving an explanation of how behavioral equivalence on smaller systems can be combined to obtain behavioral equivalence on the composed system.
In this paper, we refine this approach by focusing on so-called codensity lifting of functors, which gives a very generic presentation of various notions of (bi)similarity as well as quantitative notions such as behavioral metrics on probabilistic systems. The key idea is to use codensity liftings both at the level of algebras and coalgebras, using a new generalization of the codensity lifting. The problem of lifting distributive laws then reduces to the abstract problem of constructing distributive laws between codensity liftings, for which we propose a simplified sufficient condition. Our sufficient condition instantiates to concrete proof methods for compositionality of algebraic operations on various types of state-based systems. We instantiate our results to prove compositionality of qualitative and quantitative properties of deterministic automata. We also explore the limits of our approach by including an example of probabilistic systems, where it is unclear whether the sufficient condition holds, and instead we use our setting to give a direct proof of compositionality. ...
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Submitted 21 May, 2024; v1 submitted 12 April, 2024;
originally announced April 2024.
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Local probe of bulk and edge states in a fractional Chern insulator
Authors:
Zhurun Ji,
Heonjoon Park,
Mark E. Barber,
Chaowei Hu,
Kenji Watanabe,
Takashi Taniguchi,
Jiun-Haw Chu,
Xiaodong Xu,
Zhi-xun Shen
Abstract:
Fractional quantum Hall effect (FQHE) is a prime example of topological quantum many-body phenomena, arising from the interplay between strong electron correlation, topological order, and time reversal symmetry breaking. Recently, a lattice analog of FQHE at zero magnetic field has been observed, confirming the existence of a zero-field fractional Chern insulator (FCI). Despite this, the bulk-edge…
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Fractional quantum Hall effect (FQHE) is a prime example of topological quantum many-body phenomena, arising from the interplay between strong electron correlation, topological order, and time reversal symmetry breaking. Recently, a lattice analog of FQHE at zero magnetic field has been observed, confirming the existence of a zero-field fractional Chern insulator (FCI). Despite this, the bulk-edge correspondence -- a hallmark of FCI featuring an insulating bulk with conductive edges -- has not been directly observed. In fact, this correspondence has not been visualized in any system for fractional states due to experimental challenges. Here we report the imaging of FCI edge states in twisted MoTe2 by employing a newly developed modality of microwave-impedance microscopy. By tuning the carrier density, we observe the system evolving between metallic and FCI states, the latter of which exhibits insulating bulk and conductive edges as expected from bulk-boundary correspondence. We also observe the evolution of edge states across the topological phase transition from an incompressible Chern insulator state to a metal and finally to a putative charge ordered insulating state as a function of interlayer electric field. The local measurement further reveals tantalizing prospects of neighboring domains with different fractional orders. These findings pave the way for research into topologically protected 1D interfaces between various anyonic states at zero magnetic field, such as topological entanglement entropy, Halperin-Laughlin interfaces, and the creation of non-abelian anyons.
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Submitted 10 April, 2024;
originally announced April 2024.
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Infrared Spectroscopy for Diagnosing Superlattice Minibands in Magic-angle Twisted Bilayer Graphene
Authors:
Geng Li,
Roshan Krishna Kumar,
Petr Stepanov,
Pierre A. Pantaleón,
Zhen Zhan,
Hitesh Agarwal,
Adrien Bercher,
Julien Barrier,
Kenji Watanabe,
Takashi Taniguchi,
Alexey B. Kuzmenko,
Francisco Guinea,
Iacopo Torre,
Frank H. L. Koppens
Abstract:
Twisted bilayer graphene (TBG) represents a highly tunable, strongly correlated electron system owed to its unique flat electronic bands. However, understanding the single-particle band structure alone has been challenging due to complex lattice reconstruction effects and a lack of spectroscopic measurements over a broad energy range. Here, we probe the band structure of TBG around the magic angle…
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Twisted bilayer graphene (TBG) represents a highly tunable, strongly correlated electron system owed to its unique flat electronic bands. However, understanding the single-particle band structure alone has been challenging due to complex lattice reconstruction effects and a lack of spectroscopic measurements over a broad energy range. Here, we probe the band structure of TBG around the magic angle using infrared spectroscopy. Our measurements reveal spectral features originating from interband transitions whose energies are uniquely defined by the twist angle. By combining with quantum transport, we connect spectral features over a broad energy range (10 to 700 meV) spanning several superlattice minibands and track their evolution with twist angle. We compare our data with calculations of the band structures obtained via the continuum model and find good agreement only when considering a variation of interlayer/intralayer tunnelling parameters with the twist angle. Our analysis suggests that the magic angle also shifts due to lattice relaxation, and is better defined for a wide angular range from 0.9° to 1.1°. Our work provides spectroscopic insights into TBG's band structure and offers an optical fingerprint of the magic angle for screening heterostructures before nanofabrication.
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Submitted 8 April, 2024;
originally announced April 2024.
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Observation of dichotomic field-tunable electronic structure in twisted monolayer-bilayer graphene
Authors:
Hongyun Zhang,
Qian Li,
Youngju Park,
Yujin Jia,
Wanying Chen,
Jiaheng Li,
Qinxin Liu,
Changhua Bao,
Nicolas Leconte,
Shaohua Zhou,
Yuan Wang,
Kenji Watanabe,
Takashi Taniguchi,
Jose Avila,
Pavel Dudin,
Pu Yu,
Hongming Weng,
Wenhui Duan,
Quansheng Wu,
Jeil Jung,
Shuyun Zhou
Abstract:
Twisted bilayer graphene (tBLG) provides a fascinating platform for engineering flat bands and inducing correlated phenomena. By designing the stacking architecture of graphene layers, twisted multilayer graphene can exhibit different symmetries with rich tunability. For example, in twisted monolayer-bilayer graphene (tMBG) which breaks the C2z symmetry, transport measurements reveal an asymmetric…
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Twisted bilayer graphene (tBLG) provides a fascinating platform for engineering flat bands and inducing correlated phenomena. By designing the stacking architecture of graphene layers, twisted multilayer graphene can exhibit different symmetries with rich tunability. For example, in twisted monolayer-bilayer graphene (tMBG) which breaks the C2z symmetry, transport measurements reveal an asymmetric phase diagram under an out-of-plane electric field, exhibiting correlated insulating state and ferromagnetic state respectively when reversing the field direction. Revealing how the electronic structure evolves with electric field is critical for providing a better understanding of such asymmetric field-tunable properties. Here we report the experimental observation of field-tunable dichotomic electronic structure of tMBG by nanospot angle-resolved photoemission spectroscopy (NanoARPES) with operando gating. Interestingly, selective enhancement of the relative spectral weight contributions from monolayer and bilayer graphene is observed when switching the polarity of the bias voltage. Combining experimental results with theoretical calculations, the origin of such field-tunable electronic structure, resembling either tBLG or twisted double-bilayer graphene (tDBG), is attributed to the selectively enhanced contribution from different stacking graphene layers with a strong electron-hole asymmetry. Our work provides electronic structure insights for understanding the rich field-tunable physics of tMBG.
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Submitted 8 April, 2024;
originally announced April 2024.
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Implementation of the bilayer Hubbard model in a moiré heterostructure
Authors:
Borislav Polovnikov,
Johannes Scherzer,
Subhradeep Misra,
Henning Schlömer,
Julian Trapp,
Xin Huang,
Christian Mohl,
Zhijie Li,
Jonas Göser,
Jonathan Förste,
Ismail Bilgin,
Kenji Watanabe,
Takashi Taniguchi,
Annabelle Bohrdt,
Fabian Grusdt,
Anvar S. Baimuratov,
Alexander Högele
Abstract:
Moiré materials provide a unique platform for studies of correlated many-body physics of the Fermi-Hubbard model on triangular spin-charge lattices. Bilayer Hubbard models are of particular significance with regard to the physics of Mott insulating states and their relation to unconventional superconductivity, yet their experimental implementation in moiré systems has so far remained elusive. Here…
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Moiré materials provide a unique platform for studies of correlated many-body physics of the Fermi-Hubbard model on triangular spin-charge lattices. Bilayer Hubbard models are of particular significance with regard to the physics of Mott insulating states and their relation to unconventional superconductivity, yet their experimental implementation in moiré systems has so far remained elusive. Here, we demonstrate the realization of a staggered bilayer triangular lattice of electrons in an antiparallel MoSe$_{2}$/WS$_{2}$ heterostructure. The bilayer lattice emerges due to strong electron confinement in the moiré potential minima and the near-resonant alignment of conduction band edges in MoSe$_{2}$ and WS$_{2}$. As a result, charge filling proceeds layer-by-layer, with the first and second electron per moiré cell consecutively occupying first the MoSe$_{2}$ and then the WS$_{2}$ layer. We describe the observed charging sequence by an electrostatic model and provide experimental evidence of spin correlations on the vertically offset and laterally staggered bilayer lattice, yielding absolute exciton Landé factors as high as $600$ at lowest temperatures. The bilayer character of the implemented spin-charge lattice allows for electrostatic tunability of Ruderman-Kittel-Kasuya-Yosida magnetism, and establishes antiparallel MoSe$_{2}$/WS$_{2}$ heterostructures as a viable platform for studies of bilayer Hubbard model physics with exotic magnetic phases on frustrated lattices.
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Submitted 8 April, 2024;
originally announced April 2024.
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Probing the Anisotropic Fermi Surface in Tetralayer Graphene via Transverse Magnetic Focusing
Authors:
Illias Klanurak,
Kenji Watanabe,
Takashi Taniguchi,
Sojiphong Chatraphorn,
Thiti Taychatanapat
Abstract:
Bernal-stacked tetralayer graphene (4LG) exhibits intriguing low-energy properties, featuring two massive subbands and showcasing diverse features of topologically distinct, anisotropic Fermi surfaces, including Lifshitz transitions and trigonal warping. Here, we study the influence of the band structure on electron dynamics within 4LG using transverse magnetic focusing. Our analysis reveals two d…
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Bernal-stacked tetralayer graphene (4LG) exhibits intriguing low-energy properties, featuring two massive subbands and showcasing diverse features of topologically distinct, anisotropic Fermi surfaces, including Lifshitz transitions and trigonal warping. Here, we study the influence of the band structure on electron dynamics within 4LG using transverse magnetic focusing. Our analysis reveals two distinct focusing peaks corresponding to the two subbands. Furthermore, we uncover a pronounced dependence of the focusing spectra on crystal orientations, indicative of an anisotropic Fermi surface. Utilizing the semiclassical model, we attribute this orientation-dependent behavior to the trigonal warping of the band structure. This phenomenon leads to variations in electron trajectories based on crystal orientation. Our findings not only enhance our understanding of the dynamics of electrons in 4LG, but also offer a promising method for probing anisotropic Fermi surfaces in other materials.
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Submitted 7 April, 2024;
originally announced April 2024.
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Electronic ferroelectricity in monolayer graphene for multifunctional neuromorphic electronics
Authors:
Le Zhang,
Jing Ding,
Hanxiao Xiang,
Naitian Liu,
Wenqiang Zhou,
Linfeng Wu,
Na Xin,
Kenji Watanabe,
Takashi Taniguchi,
Shuigang Xu
Abstract:
Ferroelectricity is intriguing for its spontaneous electric polarization, which is switchable by an external electric field. Expanding ferroelectric materials to two-dimensional limit will provide versatile applications for the development of next-generation nonvolatile devices. Conventional ferroelectricity requires the materials consisting of at least two constituent elements associated with pol…
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Ferroelectricity is intriguing for its spontaneous electric polarization, which is switchable by an external electric field. Expanding ferroelectric materials to two-dimensional limit will provide versatile applications for the development of next-generation nonvolatile devices. Conventional ferroelectricity requires the materials consisting of at least two constituent elements associated with polar crystalline structures. Monolayer graphene as an elementary two-dimensional material unlikely exhibits ferroelectric order due to its highly centrosymmetric hexagonal lattices. Nevertheless, two-dimensional moire superlattices offer a powerful way to engineer diverse electronic orders in non-polar materials. Here, we report the observations of electronic ferroelectricity in monolayer graphene by introducing asymmetric moire superlattice at the graphene/h-BN interface. Utilizing Hall measurements, the electric polarization is identified to stem from electron-hole dipoles, suggesting the electronic dynamics of the observed ferroelectricity. Standard polarization-electric field hysteresis loops, as well as unconventional multiple switchable polarization states, have been achieved. By in-situ comparing with control devices, we found that the electronic ferroelectricity in graphene moire systems is independent of layer number of graphene and the corresponding fine band structures. Furthermore, we demonstrate the applications of this ferroelectric moire structures in multi-state non-volatile data storage and the emulation of versatile synaptic behaviors, including short-term plasticity, long-term potentiation and long-term depression. This work not only enriches the fundamental understanding of ferroelectricity, but also demonstrates the promising applications of graphene in multi-state memories and neuromorphic computing.
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Submitted 4 April, 2024;
originally announced April 2024.
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Even-Odd Layer-Dependent Exchange Bias Effect in MnBi2Te4 Chern Insulator Devices
Authors:
Bo Chen,
Xiaoda Liu,
Yu-Hang Li,
Han Tay,
Takashi Taniguchi,
Kenji Watanabe,
Moses. H. W. Chan,
Jiaqiang Yan,
Fengqi Song,
Ran Cheng,
Cui-Zu Chang
Abstract:
Magnetic topological materials with coexisting magnetism and non-trivial band structures exhibit many novel quantum phenomena, including the quantum anomalous Hall effect, the axion insulator state, and the Weyl semimetal phase. As a stoichiometric layered antiferromagnetic topological insulator, thin films of MnBi2Te4 show fascinating even-odd layer-dependent physics. In this work, we fabricate a…
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Magnetic topological materials with coexisting magnetism and non-trivial band structures exhibit many novel quantum phenomena, including the quantum anomalous Hall effect, the axion insulator state, and the Weyl semimetal phase. As a stoichiometric layered antiferromagnetic topological insulator, thin films of MnBi2Te4 show fascinating even-odd layer-dependent physics. In this work, we fabricate a series of thin-flake MnBi2Te4 devices using stencil masks and observe the Chern insulator state at high magnetic fields and a square hysteresis loop near zero magnetic field in all these devices. Upon magnetic field training, a large exchange bias effect is observed in odd but not in even septuple layer (SL) devices. Our theoretical calculations interpret this even-odd layer-dependent exchange bias effect as a consequence of contrasting surface and bulk magnetic properties of MnBi2Te4 devices. Our findings reveal the microscopic magnetic configuration of MnBi2Te4 thin flakes and highlight the challenges in replicating the zero magnetic field quantum anomalous Hall effect in odd SL MnBi2Te4 devices.
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Submitted 3 April, 2024;
originally announced April 2024.
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Strong interactions and isospin symmetry breaking in a supermoiré lattice
Authors:
Yonglong Xie,
Andrew T. Pierce,
Jeong Min Park,
Daniel E. Parker,
Jie Wang,
Patrick Ledwith,
Zhuozhen Cai,
Kenji Watanabe,
Takashi Taniguchi,
Eslam Khalaf,
Ashvin Vishwanath,
Pablo Jarillo-Herrero,
Amir Yacoby
Abstract:
In multilayer moiré heterostructures, the interference of multiple twist angles ubiquitously leads to tunable ultra-long-wavelength patterns known as supermoiré lattices. However, their impact on the system's many-body electronic phase diagram remains largely unexplored. We present local compressibility measurements revealing numerous incompressible states resulting from supermoiré-lattice-scale i…
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In multilayer moiré heterostructures, the interference of multiple twist angles ubiquitously leads to tunable ultra-long-wavelength patterns known as supermoiré lattices. However, their impact on the system's many-body electronic phase diagram remains largely unexplored. We present local compressibility measurements revealing numerous incompressible states resulting from supermoiré-lattice-scale isospin symmetry breaking driven by strong interactions. By using the supermoiré lattice occupancy as a probe of isospin symmetry, we observe an unexpected doubling of the miniband filling near $ν=-2$, possibly indicating a hidden phase transition or normal-state pairing proximal to the superconducting phase. Our work establishes supermoiré lattices as a tunable parameter for designing novel quantum phases and an effective tool for unraveling correlated phenomena in moiré materials.
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Submitted 1 April, 2024;
originally announced April 2024.
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Easy-to-configure zero-dimensional valley-chiral modes in a graphene point junction
Authors:
Konstantin Davydov,
Xi Zhang,
Wei Ren,
Matthew Coles,
Logan Kline,
Bryan Zucker,
Kenji Watanabe,
Takashi Taniguchi,
Ke Wang
Abstract:
The valley degree of freedom in 2D materials can be manipulated for low-dissipation quantum electronics called valleytronics. At the boundary between two regions of bilayer graphene with different atomic or electrostatic configuration, valley-polarized current has been realized. However, the demanding fabrication and operation requirements limit device reproducibility and scalability toward more a…
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The valley degree of freedom in 2D materials can be manipulated for low-dissipation quantum electronics called valleytronics. At the boundary between two regions of bilayer graphene with different atomic or electrostatic configuration, valley-polarized current has been realized. However, the demanding fabrication and operation requirements limit device reproducibility and scalability toward more advanced valleytronics circuits. We demonstrate a new device architecture of a point junction where a valley-chiral 0D PN junction is easily configured, switchable, and capable of carrying valley current with an estimated polarization of ~80%. This work provides a new building block in manipulating valley quantum numbers and scalable valleytronics.
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Submitted 1 April, 2024; v1 submitted 1 April, 2024;
originally announced April 2024.
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Electron Collimation in Twisted Bilayer Graphene via Gate-defined Moiré Barriers
Authors:
Wei Ren,
Xi Zhang,
Ziyan Zhu,
Moosa Khan,
Kenji Watanabe,
Takashi Taniguchi,
Efthimios Kaxiras,
Mitchell Luskin,
Ke Wang
Abstract:
Electron collimation via a graphene pn-junction allows electrostatic control of ballistic electron trajectories akin to that of an optical circuit. Similar manipulation of novel correlated electronic phases in twisted-bilayer graphene (tBLG) can provide additional probes to the underlying physics and device components towards advanced quantum electronics. In this work, we demonstrate collimation o…
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Electron collimation via a graphene pn-junction allows electrostatic control of ballistic electron trajectories akin to that of an optical circuit. Similar manipulation of novel correlated electronic phases in twisted-bilayer graphene (tBLG) can provide additional probes to the underlying physics and device components towards advanced quantum electronics. In this work, we demonstrate collimation of the electron flow via gate-defined moiré barriers in a tBLG device, utilizing the band-insulator gap of the moiré superlattice. A single junction can be tuned to host a chosen combination of conventional pseudo barrier and moiré tunnel barriers, from which we demonstrate improved collimation efficiency. By measuring transport through two consecutive moiré collimators separated by 1 um, we demonstrate evidence of electron collimation in tBLG in the presence of realistic twist-angle inhomogeneity.
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Submitted 30 March, 2024;
originally announced April 2024.
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Superconductivity from On-Chip Metallization on 2D Topological Chalcogenides
Authors:
Yanyu Jia,
Guo Yu,
Tiancheng Song,
Fang Yuan,
Ayelet J Uzan,
Yue Tang,
Pengjie Wang,
Ratnadwip Singha,
Michael Onyszczak,
Zhaoyi Joy Zheng,
Kenji Watanabe,
Takashi Taniguchi,
Leslie M Schoop,
Sanfeng Wu
Abstract:
Two-dimensional (2D) transition metal dichalcogenides (TMDs) is a versatile class of quantum materials of interest to various fields including, e.g., nanoelectronics, optical devices, and topological and correlated quantum matter. Tailoring the electronic properties of TMDs is essential to their applications in many directions. Here, we report that a highly controllable and uniform on-chip 2D meta…
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Two-dimensional (2D) transition metal dichalcogenides (TMDs) is a versatile class of quantum materials of interest to various fields including, e.g., nanoelectronics, optical devices, and topological and correlated quantum matter. Tailoring the electronic properties of TMDs is essential to their applications in many directions. Here, we report that a highly controllable and uniform on-chip 2D metallization process converts a class of atomically thin TMDs into robust superconductors, a property belonging to none of the starting materials. As examples, we demonstrate the introduction of superconductivity into a class of 2D air-sensitive topological TMDs, including monolayers of Td-WTe2, 1T'-MoTe2 and 2H-MoTe2, as well as their natural and twisted bilayers, metalized with an ultrathin layer of Palladium. This class of TMDs are known to exhibit intriguing topological phases ranging from topological insulator, Weyl semimetal to fractional Chern insulator. The unique, high-quality two-dimensional metallization process is based on our recent findings of the long-distance, non-Fickian in-plane mass transport and chemistry in 2D that occur at relatively low temperatures and in devices fully encapsulated with inert insulating layers. Highly compatible with existing nanofabrication techniques for van der Waals (vdW) stacks, our results offer a route to designing and engineering superconductivity and topological phases in a class of correlated 2D materials.
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Submitted 30 April, 2024; v1 submitted 28 March, 2024;
originally announced March 2024.
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Cavity electrodynamics of van der Waals heterostructures
Authors:
Gunda Kipp,
Hope M Bretscher,
Benedikt Schulte,
Dorothee Herrmann,
Kateryna Kusyak,
Matthew W Day,
Sivasruthi Kesavan,
Toru Matsuyama,
Xinyu Li,
Sara Maria Langner,
Jesse Hagelstein,
Felix Sturm,
Alexander M Potts,
Christian J Eckhardt,
Yunfei Huang,
Kenji Watanabe,
Takashi Taniguchi,
Angel Rubio,
Dante M Kennes,
Michael A Sentef,
Emmanuel Baudin,
Guido Meier,
Marios H Michael,
James W McIver
Abstract:
Van der Waals (vdW) heterostructures host many-body quantum phenomena that can be tuned in situ using electrostatic gates. These gates are often microstructured graphite flakes that naturally form plasmonic cavities, confining light in discrete standing waves of current density due to their finite size. Their resonances typically lie in the GHz - THz range, corresponding to the same $μ$eV - meV en…
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Van der Waals (vdW) heterostructures host many-body quantum phenomena that can be tuned in situ using electrostatic gates. These gates are often microstructured graphite flakes that naturally form plasmonic cavities, confining light in discrete standing waves of current density due to their finite size. Their resonances typically lie in the GHz - THz range, corresponding to the same $μ$eV - meV energy scale characteristic of many quantum effects in the materials they electrically control. This raises the possibility that built-in cavity modes could be relevant for shaping the low-energy physics of vdW heterostructures. However, capturing this light-matter interaction remains elusive as devices are significantly smaller than the diffraction limit at these wavelengths, hindering far-field spectroscopic tools. Here, we report on the sub-wavelength cavity electrodynamics of graphene embedded in a vdW heterostructure plasmonic microcavity. Using on-chip THz spectroscopy, we observed spectral weight transfer and an avoided crossing between the graphite cavity and graphene plasmon modes as the graphene carrier density was tuned, revealing their ultrastrong coupling. Our findings show that intrinsic cavity modes of metallic gates can sense and manipulate the low-energy electrodynamics of vdW heterostructures. This opens a pathway for deeper understanding of emergent phases in these materials and new functionality through cavity control.
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Submitted 28 March, 2024;
originally announced March 2024.
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Anyonic statistics and slow quasiparticle dynamics in a graphene fractional quantum Hall interferometer
Authors:
Noah L. Samuelson,
Liam A. Cohen,
Will Wang,
Simon Blanch,
Takashi Taniguchi,
Kenji Watanabe,
Michael P. Zaletel,
Andrea F. Young
Abstract:
Anyons are two dimensional particles with fractional exchange statistics that emerge as elementary excitations of fractional quantum Hall phases. Experimentally, anyonic statistics manifest directly in the edge-state Fabry-Pérot interferometer geometry, where the presence of $N_{qp}$ localized anyons in the interferometer bulk contributes a phase $N_{qp} θ_a$ to the observed interference pattern,…
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Anyons are two dimensional particles with fractional exchange statistics that emerge as elementary excitations of fractional quantum Hall phases. Experimentally, anyonic statistics manifest directly in the edge-state Fabry-Pérot interferometer geometry, where the presence of $N_{qp}$ localized anyons in the interferometer bulk contributes a phase $N_{qp} θ_a$ to the observed interference pattern, where $θ_a$ is twice the statistical exchange phase. Here, we report a measurement of $θ_a$ in a monolayer graphene Fabry-Pérot interferometer at $ν$ = 1/3. We find a preponderance of phase slips with magnitudes $Δθ\approx 2 π/ 3$, confirming the result of past experiments in GaAs quantum wells and consistent with expectations for the tunneling of Abelian anyons into the interferometer bulk. In contrast to prior work, however, single anyon tunneling events manifest as instantaneous and irreversible phase slips, indicative of quasiparticle equilibration times exceeding 20 minutes in some cases. We use the discrepancy between the quasiparticle equilibration rate and our measurement speed to vary the interferometer area and $N_{qp}$ independently, allowing us to precisely determine the interferometer phase and monitor the entry and exit of individual anyons to the interferometer loop in the time domain. Besides providing a replication of previous interferometric measurements sensitive to $θ_a$ in GaAs, our results bring anyon dynamics into the experimental regime and suggest that the average `topological charge' of a mesoscopic quantum Hall device can be held constant over hour long timescales.
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Submitted 28 May, 2024; v1 submitted 28 March, 2024;
originally announced March 2024.
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Anyon braiding and telegraph noise in a graphene interferometer
Authors:
Thomas Werkmeister,
James R. Ehrets,
Marie E. Wesson,
Danial H. Najafabadi,
Kenji Watanabe,
Takashi Taniguchi,
Bertrand I. Halperin,
Amir Yacoby,
Philip Kim
Abstract:
The search for anyons, quasiparticles with fractional charge and exotic exchange statistics, has inspired decades of condensed matter research. Quantum Hall interferometers enable direct observation of the anyon braiding phase via discrete interference phase jumps when the quasiparticle number changes. Here, we observe the universal anyonic braiding phase in both the $ν= 1/3$ and $4/3$ fractional…
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The search for anyons, quasiparticles with fractional charge and exotic exchange statistics, has inspired decades of condensed matter research. Quantum Hall interferometers enable direct observation of the anyon braiding phase via discrete interference phase jumps when the quasiparticle number changes. Here, we observe the universal anyonic braiding phase in both the $ν= 1/3$ and $4/3$ fractional quantum Hall states by probing three-state random telegraph noise (RTN) in real-time. We find that the observed RTN stems from anyon quasiparticle number $n$ fluctuations and reconstruct three Aharonov-Bohm oscillation signals phase shifted by $2π/3$, corresponding to the three possible interference branches from braiding around $n$ (mod 3) anyons. Hence, we fully characterize the anyon exchange statistics using new methods that can readily extend to non-abelian states.
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Submitted 17 April, 2024; v1 submitted 27 March, 2024;
originally announced March 2024.
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Anomalous terahertz photoconductivity caused by the superballistic flow of hydrodynamic electrons in graphene
Authors:
M. Kravtsov,
A. L. Shilov,
Y. Yang,
T. Pryadilin,
M. A. Kashchenko,
O. Popova,
M. Titova,
D. Voropaev,
Y. Wang,
K. Shein,
I. Gayduchenko,
G. N. Goltsman,
M. Lukianov,
A. Kudriashov,
T. Taniguchi,
K. Watanabe,
D. A. Svintsov,
A. Principi,
S. Adam,
K. S. Novoselov,
D. A. Bandurin
Abstract:
Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the band gap enhances the number of charge carriers participating in transport. In superconductors, the photoresistance is positive because of the destruction of the superco…
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Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the band gap enhances the number of charge carriers participating in transport. In superconductors, the photoresistance is positive because of the destruction of the superconducting state, whereas in normal metals it is vanishing. Here we report a qualitative deviation from the standard behavior in metallic graphene. We show that Dirac electrons exposed to continuous wave (CW) terahertz (THz) radiation can be thermally decoupled from the lattice by 50~K which activates hydrodynamic electron transport. In this regime, the resistance of graphene constrictions experiences a decrease caused by the THz-driven superballistic flow of correlated electrons. We analyze the dependencies of the negative photoresistance on the carrier density, and the radiation power and show that our superballistic devices operate as sensitive phonon-cooled bolometers and can thus offer a picosecond-scale response time. Beyond their fundamental implications, our findings underscore the practicality of electron hydrodynamics in designing ultra-fast THz sensors and electron thermometers.
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Submitted 29 March, 2024; v1 submitted 27 March, 2024;
originally announced March 2024.
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Coherent Modulation of Two-Dimensional Moiré States with On-Chip THz Waves
Authors:
Yiliu Li,
Eric A. Arsenault,
Birui Yang,
Xi Wang,
Heonjoon Park,
Yinjie Guo,
Takashi Taniguchi,
Kenji Watanabe,
Daniel Gamelin,
James C. Hone,
Cory R. Dean,
Sebastian F. Maehrlein,
Xiaodong Xu,
Xiaoyang Zhu
Abstract:
Van der Waals (vdW) structures of two-dimensional materials host a broad range of physical phenomena. New opportunities arise if different functional layers may be remotely modulated or coupled in a device structure. Here we demonstrate the in-situ coherent modulation of moiré excitons and correlated Mott insulators in transition metal dichalcogenide (TMD) homo- or hetero-bilayers with on-chip ter…
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Van der Waals (vdW) structures of two-dimensional materials host a broad range of physical phenomena. New opportunities arise if different functional layers may be remotely modulated or coupled in a device structure. Here we demonstrate the in-situ coherent modulation of moiré excitons and correlated Mott insulators in transition metal dichalcogenide (TMD) homo- or hetero-bilayers with on-chip terahertz (THz) waves. Using common dual-gated device structures, each consisting of a TMD moiré bilayer sandwiched between two few-layer graphene (fl-Gr) gates with hexagonal boron nitride (h-BN) spacers, we launch coherent phonon wavepackets at ~0.4-1 THz from the fl-Gr gates by femtosecond laser excitation. The waves travel through the h-BN spacer, arrive at the TMD bilayer with precise timing, and coherently modulate the moiré excitons or the Mott states. These results demonstrate that the fl-Gr gates, often used for electrical control of the material properties, can serve as effective on-chip opto-elastic transducers to generate THz waves for the coherent control and vibrational entanglement of functional layers in commonly used moiré devices.
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Submitted 20 March, 2024;
originally announced March 2024.
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Negative electronic compressibility in charge islands in twisted bilayer graphene
Authors:
Robin J. Dolleman,
Alexander Rothstein,
Ammon Fischer,
Lennart Klebl,
Lutz Waldecker,
Kenji Watanabe,
Takashi Taniguchi,
Dante M. Kennes,
Florian Libisch,
Bernd Beschoten,
Christoph Stampfer
Abstract:
We report on the observation of negative electronic compressibility in twisted bilayer graphene for Fermi energies close to insulating states. To observe this negative compressibility, we take advantage of naturally occurring twist angle domains that emerge during the fabrication of the samples, leading to the formation of charge islands. We accurately measure their capacitance using Coulomb oscil…
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We report on the observation of negative electronic compressibility in twisted bilayer graphene for Fermi energies close to insulating states. To observe this negative compressibility, we take advantage of naturally occurring twist angle domains that emerge during the fabrication of the samples, leading to the formation of charge islands. We accurately measure their capacitance using Coulomb oscillations, from which we infer the compressibility of the electron gas. Notably, we not only observe the negative electronic compressibility near correlated insulating states at integer filling, but also prominently near the band insulating state at full filling, located at the edges of both the flat- and remote bands. Furthermore, the individual twist angle domains yield a well-defined carrier density, enabling us to quantify the strength of electronic interactions and verify the theoretical prediction that the inverse negative capacitance contribution is proportional to the average distance between the charge carriers. A detailed analysis of our findings suggests that Wigner crystallization is the most likely explanation for the observed negative electronic compressibility.
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Submitted 26 March, 2024;
originally announced March 2024.
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Unveiling the origin of unconventional moire ferroelectricity
Authors:
Ruirui Niu,
Zhuoxian Li,
Xiangyan Han,
Qianling Liu,
Zhuangzhuang Qu,
Zhiyu Wang,
Chunrui Han,
Kenji Watanabe,
Takashi Taniguchi,
Kaihui Liu,
Jinhai Mao,
Wu Shi,
Bo Peng,
Zheng Vitto Han,
Zizhao Gan,
Jianming Lu
Abstract:
Interfacial ferroelectricity emerges in heterostructures consisting of nonpolar van der Waals (vdW) layers, greatly expanding the scope of two dimensional ferroelectrics. In particular, the unconventional moire ferroelectricity observed in bilayer graphene/boron nitride (BN) heterostructures, exhibits promising functionalities with topological current, superconductivity and synaptic responses. How…
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Interfacial ferroelectricity emerges in heterostructures consisting of nonpolar van der Waals (vdW) layers, greatly expanding the scope of two dimensional ferroelectrics. In particular, the unconventional moire ferroelectricity observed in bilayer graphene/boron nitride (BN) heterostructures, exhibits promising functionalities with topological current, superconductivity and synaptic responses. However, the debate about its mechanism - correlation driven charge transfer between two graphene layers - limits device reproducibility and hence large-scale production. Here by designing a single-layer graphene encapsulated by lattice-mismatched WSe2, we identify the ferroelectricity as stemming from - instead of graphene moire bands - the particular BN, where interfacial sliding ferroelectricity must play a role. With similar structures, multilayer twisted MoS2 is found to reproduce the ferroelectricity. The key is a conductive moire ferroelectric, where the screened gate and the pinned domain wall together result in unchanged electronic states, i.e. anomalous screening. The intimate connection to interfacial sliding ferroelectricity thus provides advantages of diverse choices of constituent materials and robust polarization switching while preserving the unique anomalous screening, paving the way to reproducible and reliable memory-based devices in artificial intelligence.
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Submitted 25 March, 2024;
originally announced March 2024.
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Layer-selective spin-orbit coupling and strong correlation in bilayer graphene
Authors:
Anna M. Seiler,
Yaroslav Zhumagulov,
Klaus Zollner,
Chiho Yoon,
David Urbaniak,
Fabian R. Geisenhof,
Kenji Watanabe,
Takashi Taniguchi,
Jaroslav Fabian,
Fan Zhang,
R. Thomas Weitz
Abstract:
Spin-orbit coupling (SOC) and electron-electron interaction can mutually influence each other and give rise to a plethora of intriguing phenomena in condensed matter systems. In pristine bilayer graphene, which has weak SOC, intrinsic Lifshitz transitions and concomitant van-Hove singularities lead to the emergence of many-body correlated phases. Layer-selective SOC can be proximity induced by add…
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Spin-orbit coupling (SOC) and electron-electron interaction can mutually influence each other and give rise to a plethora of intriguing phenomena in condensed matter systems. In pristine bilayer graphene, which has weak SOC, intrinsic Lifshitz transitions and concomitant van-Hove singularities lead to the emergence of many-body correlated phases. Layer-selective SOC can be proximity induced by adding a layer of tungsten diselenide (WSe2) on its one side. By applying an electric displacement field, the system can be tuned across a spectrum wherein electronic correlation, SOC, or a combination of both dominates. Our investigations reveal an intricate phase diagram of proximity-induced SOC-selective bilayer graphene. Not only does this phase diagram include those correlated phases reminiscent of SOC-free doped bilayer graphene, but it also hosts unique SOC-induced states allowing a compelling measurement of valley g-factor and a seemingly impossible correlated insulator at charge neutrality, thereby showcasing the remarkable tunability of the interplay between interaction and SOC in WSe2 enriched bilayer graphene.
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Submitted 25 March, 2024;
originally announced March 2024.
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Spin-orbit proximity in MoS$_2$/bilayer graphene heterostructures
Authors:
M. Masseroni,
M. Gull,
A. Panigrahi,
N. Jacobsen,
F. Fischer,
C. Tong,
J. D. Gerber,
M. Niese,
T. Taniguchi,
K. Watanabe,
L. Levitov,
T. Ihn,
K. Ensslin,
H. Duprez
Abstract:
Van der Waals heterostructures provide a versatile platform for tailoring electronic properties through the integration of two-dimensional materials. Among these combinations, the interaction between bilayer graphene and transition metal dichalcogenides (TMDs) stands out due to its potential for inducing spin-orbit coupling (SOC) in graphene. Future devices concepts require the understanding the p…
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Van der Waals heterostructures provide a versatile platform for tailoring electronic properties through the integration of two-dimensional materials. Among these combinations, the interaction between bilayer graphene and transition metal dichalcogenides (TMDs) stands out due to its potential for inducing spin-orbit coupling (SOC) in graphene. Future devices concepts require the understanding the precise nature of SOC in TMD/bilayer graphene heterostructures and its influence on electronic transport phenomena. Here, we experimentally confirm the presence of two distinct types of SOC, Ising (1.55 meV) and Rashba (2.5 meV), in bilayer graphene when interfaced with molybdenum disulphide, recognized as one of the most stable TMDs. Furthermore, we reveal a non-monotonic trend in conductivity with respect to the electric displacement field at charge neutrality. This phenomenon is ascribed to the existence of single-particle gaps induced by the Ising SOC, which can be closed by a critical displacement field. Remarkably, our findings also unveil sharp peaks in the magnetoconductivity around the critical displacement field, challenging existing theoretical models.
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Submitted 25 March, 2024;
originally announced March 2024.
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Observation of the dual quantum spin Hall insulator by density-tuned correlations in a van der Waals monolayer
Authors:
Jian Tang,
Thomas Siyuan Ding,
Hongyu Chen,
Anyuan Gao,
Tiema Qian,
Zumeng Huang,
Zhe Sun,
Xin Han,
Alex Strasser,
Jiangxu Li,
Michael Geiwitz,
Mohamed Shehabeldin,
Vsevolod Belosevich,
Zihan Wang,
Yiping Wang,
Kenji Watanabe,
Takashi Taniguchi,
David C. Bell,
Ziqiang Wang,
Liang Fu,
Yang Zhang,
Xiaofeng Qian,
Kenneth S. Burch,
Youguo Shi,
Ni Ni
, et al. (3 additional authors not shown)
Abstract:
The convergence of topology and correlations represents a highly coveted realm in the pursuit of novel quantum states of matter. Introducing electron correlations to a quantum spin Hall (QSH) insulator can lead to the emergence of a fractional topological insulator and other exotic time-reversal-symmetric topological order, not possible in quantum Hall and Chern insulator systems. However, the QSH…
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The convergence of topology and correlations represents a highly coveted realm in the pursuit of novel quantum states of matter. Introducing electron correlations to a quantum spin Hall (QSH) insulator can lead to the emergence of a fractional topological insulator and other exotic time-reversal-symmetric topological order, not possible in quantum Hall and Chern insulator systems. However, the QSH insulator with quantized edge conductance remains rare, let alone that with significant correlations. In this work, we report a novel dual QSH insulator within the intrinsic monolayer crystal of TaIrTe4, arising from the interplay of its single-particle topology and density-tuned electron correlations. At charge neutrality, monolayer TaIrTe4 demonstrates the QSH insulator that aligns with single-particle band structure calculations, manifesting enhanced nonlocal transport and quantized helical edge conductance. Interestingly, upon introducing electrons from charge neutrality, TaIrTe4 only shows metallic behavior in a small range of charge densities but quickly goes into a new insulating state, entirely unexpected based on TaIrTe4's single-particle band structure. This insulating state could arise from a strong electronic instability near the van Hove singularities (VHS), likely leading to a charge density wave (CDW). Remarkably, within this correlated insulating gap, we observe a resurgence of the QSH state, marked by the revival of nonlocal transport and quantized helical edge conduction. Our observation of helical edge conduction in a CDW gap could bridge spin physics and charge orders. The discovery of a dual QSH insulator introduces a new method for creating topological flat minibands via CDW superlattices, which offer a promising platform for exploring time-reversal-symmetric fractional phases and electromagnetism.
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Submitted 23 March, 2024;
originally announced March 2024.
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Band gap formation in commensurate twisted bilayer graphene/hBN moiré lattices
Authors:
Alexander Rothstein,
Christoph Schattauer,
Robin J. Dolleman,
Stefan Trellenkamp,
Florian Lentz,
Kenji Watanabe,
Takashi Taniguchi,
Dante M. Kennes,
Bernd Beschoten,
Christoph Stampfer,
Florian Libisch
Abstract:
We report on the investigation of periodic superstructures in twisted bilayer graphene (tBLG) van-der-Waals heterostructures, where one of the graphene layers is aligned to hexagonal boron nitride (hBN). Our theoretical simulations reveal that if the ratio of the resulting two moiré unit cell areas is a simple fraction, the graphene/hBN moiré lattice acts as a staggered potential, breaking the deg…
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We report on the investigation of periodic superstructures in twisted bilayer graphene (tBLG) van-der-Waals heterostructures, where one of the graphene layers is aligned to hexagonal boron nitride (hBN). Our theoretical simulations reveal that if the ratio of the resulting two moiré unit cell areas is a simple fraction, the graphene/hBN moiré lattice acts as a staggered potential, breaking the degeneracy between tBLG AA sites. This leads to additional band gaps at energies where a subset of tBLG AA sites is fully occupied. These gaps manifest as Landau fans in magnetotransport, which we experimentally observe in an aligned tBLG/hBN heterostructure. Our study demonstrates the identification of commensurate tBLG/hBN van-der-Waals heterostructures by magnetotransport, highlights the persistence of moiré effects on length scales of tens of nanometers, and represents an interesting step forward in the ongoing effort to realise designed quantum materials with tailored properties.
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Submitted 21 March, 2024;
originally announced March 2024.