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Observation of current whirlpools in graphene at room temperature
Authors:
Marius L. Palm,
Chaoxin Ding,
William S. Huxter,
Takashi Taniguchi,
Kenji Watanabe,
Christian L. Degen
Abstract:
Electron-electron interactions in high-mobility conductors can give rise to transport signatures resembling those described by classical hydrodynamics. Using a nanoscale scanning magnetometer, we imaged a distinctive hydrodynamic transport pattern - stationary current vortices - in a monolayer graphene device at room temperature. By measuring devices with increasing characteristic size, we observe…
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Electron-electron interactions in high-mobility conductors can give rise to transport signatures resembling those described by classical hydrodynamics. Using a nanoscale scanning magnetometer, we imaged a distinctive hydrodynamic transport pattern - stationary current vortices - in a monolayer graphene device at room temperature. By measuring devices with increasing characteristic size, we observed the disappearance of the current vortex and thus verify a prediction of the hydrodynamic model. We further observed that vortex flow is present for both hole- and electron-dominated transport regimes, while disappearing in the ambipolar regime. We attribute this effect to a reduction of the vorticity diffusion length near charge neutrality. Our work showcases the power of local imaging techniques for unveiling exotic mesoscopic transport phenomena.
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Submitted 31 July, 2024;
originally announced August 2024.
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Femtosecond switching of strong light-matter interactions in microcavities with two-dimensional semiconductors
Authors:
Armando Genco,
Charalambos Louca,
Cristina Cruciano,
Kok Wee Song,
Chiara Trovatello,
Giuseppe Di Blasio,
Giacomo Sansone,
Sam Randerson,
Peter Claronino,
Rahul Jayaprakash,
Kenji Watanabe,
Takashi Taniguchi,
David G. Lidzey,
Oleksandr Kyriienko,
Stefano Dal Conte,
Alexander I. Tartakovskii,
Giulio Cerullo
Abstract:
Ultrafast all-optical logic devices based on nonlinear light-matter interactions hold the promise to overcome the speed limitations of conventional electronic devices. Strong coupling of excitons and photons inside an optical resonator enhances such interactions and generates new polariton states which give access to unique nonlinear phenomena, such as Bose-Einstein condensation, used for all-opti…
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Ultrafast all-optical logic devices based on nonlinear light-matter interactions hold the promise to overcome the speed limitations of conventional electronic devices. Strong coupling of excitons and photons inside an optical resonator enhances such interactions and generates new polariton states which give access to unique nonlinear phenomena, such as Bose-Einstein condensation, used for all-optical ultrafast polariton transistors. However, the pulse energies required to pump such devices range from tens to hundreds of pJ, making them not competitive with electronic transistors. Here we introduce a new paradigm for all-optical switching based on the ultrafast transition from the strong to the weak coupling regime in microcavities embedding atomically thin transition metal dichalcogenides. Employing single and double stacks of hBN-encapsulated MoS$_2$ homobilayers with high optical nonlinearities and fast exciton relaxation times, we observe a collapse of the 55-meV polariton gap and its revival in less than one picosecond, lowering the threshold for optical switching below 4 pJ per pulse, while retaining ultrahigh switching frequencies. As an additional degree of freedom, the switching can be triggered pumping either the intra- or the interlayer excitons of the bilayers at different wavelengths, speeding up the polariton dynamics, owing to unique interspecies excitonic interactions. Our approach will enable the development of compact ultrafast all-optical logical circuits and neural networks, showcasing a new platform for polaritonic information processing based on manipulating the light-matter coupling.
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Submitted 31 July, 2024;
originally announced August 2024.
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Confined Trions and Mott-Wigner States in a Purely Electrostatic Moiré Potential
Authors:
Natasha Kiper,
Haydn S. Adlong,
Arthur Christianen,
Martin Kroner,
Kenji Watanabe,
Takashi Taniguchi,
Atac Imamoglu
Abstract:
Moiré heterostructures consisting of transition metal dichalcogenide (TMD) hetero- and homobilayers have emerged as a promising material platform to study correlated electronic states. Optical signatures of strong correlations in the form of Mott-Wigner states and fractional Chern insulators have already been observed in TMD monolayers and their twisted bilayers. In this work, we use a moiré subst…
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Moiré heterostructures consisting of transition metal dichalcogenide (TMD) hetero- and homobilayers have emerged as a promising material platform to study correlated electronic states. Optical signatures of strong correlations in the form of Mott-Wigner states and fractional Chern insulators have already been observed in TMD monolayers and their twisted bilayers. In this work, we use a moiré substrate containing a twisted hexagonal boron nitride (h-BN) interface to externally generate a superlattice potential for the TMD layer: the periodic structure of ferroelectric domains in h-BN effects a purely electrostatic potential for charge carriers. We find direct evidence for the induced moiré potential in the emergence of new excitonic resonances at integer fillings, and our observation of an enhancement of the trion binding energy by $\simeq$ 3 meV. A theoretical model for exciton-electron interactions allows us to directly determine the moiré potential modulation of 30$\pm$5 meV from the measured trion binding energy shift. We obtain direct evidence for charge order linked to electronic Mott-Wigner states at filling factors $ν$ = 1/3 and $ν$ = 2/3 through the associated exciton Umklapp resonances.
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Submitted 30 July, 2024;
originally announced July 2024.
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Giant anisotropic magnetoresistance in few-layer α-RuCl3 tunnel junctions
Authors:
Mathieu Massicotte,
Sam Dehlavi,
Xiaoyu Liu,
James L. Hart,
Elio Garnaoui,
Paula Lampen-Kelley,
Jiaqiang Yan,
David Mandrus,
Stephen E. Nagler,
Kenji Watanabe,
Takashi Taniguchi,
Bertrand Reulet,
Judy J. Cha,
Hae-Young Kee,
Jeffrey A. Quilliam
Abstract:
The spin-orbit assisted Mott insulator $α$-RuCl3 is proximate to the coveted quantum spin liquid (QSL) predicted by the Kitaev model. In the search for the pure Kitaev QSL, reducing the dimensionality of this frustrated magnet by exfoliation has been proposed as a way to enhance magnetic fluctuations and Kitaev interactions. Here, we perform angle-dependent tunneling magnetoresistance (TMR) measur…
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The spin-orbit assisted Mott insulator $α$-RuCl3 is proximate to the coveted quantum spin liquid (QSL) predicted by the Kitaev model. In the search for the pure Kitaev QSL, reducing the dimensionality of this frustrated magnet by exfoliation has been proposed as a way to enhance magnetic fluctuations and Kitaev interactions. Here, we perform angle-dependent tunneling magnetoresistance (TMR) measurements on ultrathin $α$-RuCl3 crystals with various layer numbers to probe their magnetic, electronic and crystal structure. We observe a giant change in resistance - as large as ~2500% - when the magnetic field rotates either within or out of the $α$-RuCl3 plane, a manifestation of the strongly anisotropic spin interactions in this material. In combination with scanning transmission electron microscopy, this tunneling anisotropic magnetoresistance (TAMR) reveals that few-layer $α$-RuCl3 crystals remain in the high-temperature monoclinic phase at low temperature. It also shows the presence of a zigzag antiferromagnetic order below the critical temperature TN ~ 14 K, which is twice the one typically observed in bulk samples with rhombohedral stacking. Our work offers valuable insights into the relation between the stacking order and magnetic properties of this material, which helps lay the groundwork for creating and electrically probing exotic magnetic phases like QSLs via van der Waals engineering.
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Submitted 29 July, 2024;
originally announced July 2024.
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Interlayer Raman modes in twisted bilayer TMDCs
Authors:
Eileen Schneider,
Kenji Watanabe,
Takashi Taniguchi,
Janina Maultzsch
Abstract:
Twisted bilayer two-dimensional transition-metal dichalgocenides (TMDCs) exhibit a range of novel phenomena such as the formation of moiré excitons and strongly correlated phases. The coupling between the layers is crucial for the resulting physical properties and depends not just on the twist angle but also on the details of the fabrication process. Here, we present an approach for the analysis o…
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Twisted bilayer two-dimensional transition-metal dichalgocenides (TMDCs) exhibit a range of novel phenomena such as the formation of moiré excitons and strongly correlated phases. The coupling between the layers is crucial for the resulting physical properties and depends not just on the twist angle but also on the details of the fabrication process. Here, we present an approach for the analysis of this interlayer coupling via Raman spectroscopy. By exciting the C-exciton resonance of the TMDCs, optical (high-frequency) interlayer Raman modes are activated that are too weak in intensity at excitation energies far below the C exciton. This is due to the wave function of the C exciton, which expands - in contrast to A and B excitons - over both layers and, therefore, couples the layers electronically. We present optical interlayer Raman modes in twisted 2L TMDCs and show that they can be used as a measure of the interlayer coupling between the individual layers.
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Submitted 26 July, 2024;
originally announced July 2024.
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Excitons in Fractional Quantum Hall Effect
Authors:
Naiyuan J. Zhang,
Ron Q. Nguyen,
Navketan Batra,
Xiaoxue Liu,
Kenji Watanabe,
Takashi Taniguchi,
D. E. Feldman,
J. I. A. Li
Abstract:
An exciton is a Coulomb-driven bound state, which normally consists of an electron and a hole. Under the influence of charge fractionalization, an exotic construction of exciton arises from pairing between fractional particle and hole charge. Despite numerous theoretical considerations, experimental realization of fractional excitons remains largely unexplored. In this work, we report hallmark tra…
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An exciton is a Coulomb-driven bound state, which normally consists of an electron and a hole. Under the influence of charge fractionalization, an exotic construction of exciton arises from pairing between fractional particle and hole charge. Despite numerous theoretical considerations, experimental realization of fractional excitons remains largely unexplored. In this work, we report hallmark transport signatures of excitonic pairing that coexists with fractional quantum Hall effect states. Such coexistence reveals a new construction for fractional quantum Hall effect, where exciton pairing plays an essential role in defining the underlying wavefunction. By surveying the two-dimensional phase space defined by Landau-level filling and layer imbalance, we describe transitions between ground states with distinct exciton compositions. The hierarchical behavior of the excitonic sequence provides potential evidence for excitons with fractional charge constituents, which obey fermionic and anyonic statistics.
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Submitted 25 July, 2024;
originally announced July 2024.
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The temperature influence on the brightening of neutral and charged dark excitons in WSe$_2$ monolayer
Authors:
Ł. Kipczak,
N. Zawadzka,
D. Jana,
I. Antoniazzi,
M. Grzeszczyk,
M. Zinkiewicz,
K. Watanabe,
T. Taniguchi,
M. Potemski,
C. Faugeras,
A. Babiński,
M. R. Molas
Abstract:
The optically dark states play an important role in the electronic and optical properties of monolayers (MLs) of semiconducting transition metal dichalcogenides. The effect of temperature on the in-plane-field activation of the neutral and charged dark excitons is investigated in a WSe$_2$ ML encapsulated in hexagonal BN flakes. The brightening rates of the neutral dark (X$^D$) and grey (X$^G$) ex…
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The optically dark states play an important role in the electronic and optical properties of monolayers (MLs) of semiconducting transition metal dichalcogenides. The effect of temperature on the in-plane-field activation of the neutral and charged dark excitons is investigated in a WSe$_2$ ML encapsulated in hexagonal BN flakes. The brightening rates of the neutral dark (X$^D$) and grey (X$^G$) excitons and the negative dark trion (T$^D$) differ substantially at a particular temperature. More importantly, they vanish considerably by about 3 -- 4 orders of magnitude with the temperature increased from 4.2 K to 100 K. The quenching of the dark-related emissions is accompanied by the two-order-of-magnitude increase in the emissions of their neutral bright counterparts, $i.e.$ neutral bright exciton (X$^B$) and spin-singlet (T$^S$) and spin-triplet (T$^T$) negative trions, due to the thermal activations of dark states. Furthermore, the energy splittings between the dark X$^D$ and T$^D$ complexes and the corresponding bright X$^B$, T$^S$, and T$^T$ ones vary with temperature rises from 4.2 K to 100 K. This can be explained in terms of the different exciton-phonon couplings for the bright and dark excitons stemming from their distinct symmetry properties.
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Submitted 25 July, 2024;
originally announced July 2024.
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Quadrupolar Excitons in MoSe2 Bilayers
Authors:
Jakub Jasiński,
Joakim Hagel,
Samuel Brem,
Edith Wietek,
Takashi Taniguchi,
Kenji Watanabe,
Alexey Chernikov,
Nicolas Bruyant,
Mateusz Dyksik,
Alessandro Surrente,
Michał Baranowski,
Duncan K. Maude,
Ermin Malic,
Paulina Płochocka
Abstract:
The quest for platforms to generate and control exotic excitonic states has greatly benefited from the advent of transition metal dichalcogenide (TMD) monolayers and their heterostructures. Among the unconventional excitonic states, quadrupolar excitons - a hybridized combination of two dipolar excitons with anti-aligned dipole moments - are of great interest for applications in quantum simulation…
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The quest for platforms to generate and control exotic excitonic states has greatly benefited from the advent of transition metal dichalcogenide (TMD) monolayers and their heterostructures. Among the unconventional excitonic states, quadrupolar excitons - a hybridized combination of two dipolar excitons with anti-aligned dipole moments - are of great interest for applications in quantum simulations and for the investigation of many-body physics. Here, we unambiguously demonstrate for the first time in natural MoSe$_2$ homobilayers the emergence of quadrupolar excitons, whose energy shifts quadratically in electric field. In contrast to, so far reported trilayer systems hosting quadrupolar excitons, MoSe$_2$ homobilayers have many advantages, a stronger interlayer hybridization, cleaner potential landscapes and inherent stability with respect to moiré potentials or post-stacking reconstruction. Our experimental observations are complemented by many-particle theory calculations offering microscopic insights in the formation of quadrupole excitons. Our results suggest TMD homobilayers as ideal platform for the engineering of excitonic states and their interaction with light and thus candidate for carrying out on-chip simulations.
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Submitted 25 July, 2024;
originally announced July 2024.
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Spectrally resolved far-field emission pattern of single photon emitters in MoS2
Authors:
Katja Barthelmi,
Tomer Amit,
Lukas Sigl,
Mirco Troue,
Thomas Klokkers,
Anna Herrmann,
Takashi Taniguchi,
Kenji Watanabe,
Jonathan Finley,
Christoph Kastl,
Sivan Refaely-Abramson,
Alexander Holleitner
Abstract:
We explore the optical dipole orientation of single photon emitters in monolayer MoS2 as produced by a focused helium ion beam. The single photon emitters can be understood as single sulfur vacancies. The corresponding far-field luminescence spectra reveal several photoluminescence lines below the dominating luminescence of the exciton in MoS2. These sub-bandgap emission lines were predicted by ab…
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We explore the optical dipole orientation of single photon emitters in monolayer MoS2 as produced by a focused helium ion beam. The single photon emitters can be understood as single sulfur vacancies. The corresponding far-field luminescence spectra reveal several photoluminescence lines below the dominating luminescence of the exciton in MoS2. These sub-bandgap emission lines were predicted by ab initio theory, but they have never been resolved in luminescence experiments because of their small amplitude. We reveal the lines by their dependence as a function of the photon energy and momentum as measured in the back focal plane of the optical circuitry. The agreement between theory and experiment suggests that the defect states interact strongly within the Brillouin zone.
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Submitted 25 July, 2024;
originally announced July 2024.
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Distinct moiré trions in a twisted semiconductor homobilayer
Authors:
Zhida Liu,
Haonan Wang,
Xiaohui Liu,
Yue Ni,
Frank Gao,
Saba Arash,
Dong Seob Kim,
Xiangcheng Liu,
Yongxin Zeng,
Jiamin Quan,
Di Huang,
Kenji Watanabe,
Takashi Taniguchi,
Edoardo Baldini,
Allan H. MacDonald,
Chih-Kang Shih,
Li Yang,
Xiaoqin Li
Abstract:
Many fascinating properties discovered in graphene and transition metal dichalcogenide (TMD) moiré superlattices originate from flat bands and enhanced many-body effects. Here, we discover new many-electron excited states in TMD homobilayers. As optical resonances evolve with twist angle and doping in MoSe$_2$ bilayers, a unique type of ``charge-transfer" trions is observed when gradual changes in…
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Many fascinating properties discovered in graphene and transition metal dichalcogenide (TMD) moiré superlattices originate from flat bands and enhanced many-body effects. Here, we discover new many-electron excited states in TMD homobilayers. As optical resonances evolve with twist angle and doping in MoSe$_2$ bilayers, a unique type of ``charge-transfer" trions is observed when gradual changes in atomic alignment between the layers occur. In real space, the optically excited electron-hole pair mostly resides in a different site from the doped hole in a moiré supercell. In momentum space, the electron-hole pair forms in the single-particle-band $K$-valley, while the hole occupies the $Γ$-valley. The rich internal structure of this trion resonance arises from the ultra-flatness of the first valence band and the distinct influence of moiré potential modulation on holes and excitons. Our findings open new routes to realizing photon-spin transduction or implementing moiré quantum simulators with independently tunable fermion and boson densities.
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Submitted 24 July, 2024;
originally announced July 2024.
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Selective and Quasi-continuous Switching of Ferroelectric Chern Insulator Device for Neuromorphic Computing
Authors:
Moyu Chen,
Yongqin Xie,
Bin Cheng,
Zaizheng Yang,
Xin-Zhi Li,
Fanqiang Chen,
Qiao Li,
Jiao Xie,
Kenji Watanabe,
Takashi Taniguchi,
Wen-Yu He,
Menghao Wu,
Shi-Jun Liang,
Feng Miao
Abstract:
Topologically protected edge state transport in quantum materials is dissipationless and features quantized Hall conductance, and shows great potential in highly fault-tolerant computing technologies. However, it remains elusive about how to develop topological edge state-based computing devices. Recently, exploration and understanding of interfacial ferroelectricity in various van der Waals heter…
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Topologically protected edge state transport in quantum materials is dissipationless and features quantized Hall conductance, and shows great potential in highly fault-tolerant computing technologies. However, it remains elusive about how to develop topological edge state-based computing devices. Recently, exploration and understanding of interfacial ferroelectricity in various van der Waals heterostructure material systems have received widespread attention among the community of materials science and condensed matter physics3-11. Such ferroelectric polarization emergent at the vdW interface can coexist with other quantum states and thus provides an unprecedented opportunity to electrically switch the topological edge states of interest, which is of crucial significance to the fault-tolerant electronic device applications based on the topological edge states. Here, we report the selective and quasi-continuous ferroelectric switching of topological Chern insulator devices and demonstrate its promising application in noise-immune neuromorphic computing. We fabricate this ferroelectric Chern insulator device by encapsulating magic-angle twisted bilayer graphene with doubly-aligned h-BN layers, and observe the coexistence of the interfacial ferroelectricity and the topological Chern insulating states. This ferroelectricity exhibits an anisotropic dependence on the in-plane magnetic field. By using a VBG pulse with delicately controlled amplitude, we realize the nonvolatile switching between any pair of Chern insulating states and achieve 1280 distinguishable nonvolatile resistance levels on a single device. Furthermore, we demonstrate deterministic switching between two arbitrary levels among the record-high number of nonvolatile resistance levels.
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Submitted 24 July, 2024;
originally announced July 2024.
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Terahertz and gigahertz magneto-ratchets in graphene-based 2D metamaterials
Authors:
Marcel Hild,
Erwin Mönch,
Leonid E. Golub,
Ivan A. Dmitriev,
Ivan Yahniuk,
Katharina Amann,
Julia Amann,
Jonathan Eroms,
Jörg Wunderlich,
Dieter Weiss,
Christophe Consejo,
Cedric Bray,
Kenneth Maussang,
Frederic Teppe,
Joanna Gumenjuk-Sichevska,
Kenji Watanabe,
Takashi Taniguchi,
Sergey D. Ganichev
Abstract:
We report on the observation and study of the magneto-ratchet effect in a graphene-based two-dimensional metamaterial formed by a graphite gate that is placed below a graphene monolayer and patterned with an array of triangular antidots. We demonstrate that terahertz/gigahertz excitation of the metamaterial leads to sign-alternating magneto-oscillations with an amplitude that exceeds the ratchet c…
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We report on the observation and study of the magneto-ratchet effect in a graphene-based two-dimensional metamaterial formed by a graphite gate that is placed below a graphene monolayer and patterned with an array of triangular antidots. We demonstrate that terahertz/gigahertz excitation of the metamaterial leads to sign-alternating magneto-oscillations with an amplitude that exceeds the ratchet current at zero magnetic field by orders of magnitude. The oscillations are shown to be related to the Shubnikov-de Haas effect. In addition to the giant ratchet current oscillations we detect resonant ratchet currents caused by the cyclotron and electron spin resonances. The results are well described by the developed theory considering the magneto-ratchet effect caused by the interplay of the near-field radiation and the nonuniform periodic electrostatic potential of the metamaterial controlled by the gate voltages.
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Submitted 22 July, 2024;
originally announced July 2024.
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Infrared magneto-polaritons in MoTe$_2$ mono- and bilayers
Authors:
Bo Han,
Jamie M. Fitzgerald,
Lukas Lackner,
Roberto Rosati,
Martin Esmann,
Falk Eilenberger,
Takashi Taniguchi,
Kenji Watanabe,
Marcin Syperek,
Ermin Malic,
Christian Schneider
Abstract:
MoTe$_2$ monolayers and bilayers are unique within the family of van-der-Waals materials since they pave the way towards atomically thin infrared light-matter quantum interfaces, potentially reaching the important telecommunication windows. Here, we report emergent exciton-polaritons based on MoTe$_2$ monolayer and bilayer in a low-temperature open micro-cavity in a joint experiment-theory study.…
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MoTe$_2$ monolayers and bilayers are unique within the family of van-der-Waals materials since they pave the way towards atomically thin infrared light-matter quantum interfaces, potentially reaching the important telecommunication windows. Here, we report emergent exciton-polaritons based on MoTe$_2$ monolayer and bilayer in a low-temperature open micro-cavity in a joint experiment-theory study. Our experiments clearly evidence both the enhanced oscillator strength and enhanced luminescence of MoTe$_2$ bilayers, signified by a 38 \% increase of the Rabi-splitting and a strongly enhanced relaxation of polaritons to low-energy states. The latter is distinct from polaritons in MoTe$_2$ monolayers, which feature a bottleneck-like relaxation inhibition. Both the polaritonic spin-valley locking in monolayers and the spin-layer locking in bilayers are revealed via the Zeeman effect, which we map and control via the light-matter composition of our polaritonic resonances.
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Submitted 20 July, 2024;
originally announced July 2024.
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Low [O/Fe] Ratio in a Luminous Galaxy at the Early Cosmic Epoch ($z>10$): Signature of Short Delay Time or Bright Hypernovae/Pair-Instability Supernovae?
Authors:
Minami Nakane,
Masami Ouchi,
Kimihiko Nakajima,
Yuichi Harikane,
Nozomu Tominaga,
Koh Takahashi,
Hiroto Yanagisawa,
Kuria Watanabe,
Ken'ichi Nomoto,
Yuki Isobe,
Daichi Kashino,
Moka Nishigaki,
Miho N. Ishigaki,
Yoshiaki Ono,
Yui Takeda
Abstract:
We present an [O/Fe] ratio of a luminous galaxy GN-z11 at $z=10.60$ derived with the deep public JWST/NIRSpec data. We fit the medium-resolution grating data with the model spectra consisting of BPASS-stellar and CLOUDY-nebular spectra in the rest-frame UV wavelength ranges with Fe absorption lines, carefully masking out the other emission and absorption lines in the same manner as previous studie…
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We present an [O/Fe] ratio of a luminous galaxy GN-z11 at $z=10.60$ derived with the deep public JWST/NIRSpec data. We fit the medium-resolution grating data with the model spectra consisting of BPASS-stellar and CLOUDY-nebular spectra in the rest-frame UV wavelength ranges with Fe absorption lines, carefully masking out the other emission and absorption lines in the same manner as previous studies conducted for lower redshift ($z\sim 2-6$) galaxies with oxygen abundance measurements. We obtain an Fe-rich abundance ratio $\mathrm{[O/Fe]}=-0.39^{+0.59}_{-0.36}$ that is confirmed with the independent deep prism data as well as by the classic 1978 index method. This [O/Fe] measurement is lower than that at $z\sim 2-3$ and comparable with those at $z\sim 6$. Because $z=10.60$ is an early epoch after the Big Bang ($\sim 430$ Myr) and the first star formation (likely $\sim 200$ Myr), there is a difficulty in efficiently producing Fe by Type Ia supernovae (SNeIa) requiring sufficient delay time for white-dwarf formation and gas accretion. The Fe-rich abundance ratio in GN-z11 suggests that the delay time is short, or that the major Fe enrichment is not accomplished by SNeIa but bright hypernovae (BrHNe) and/or pair-instability supernovae (PISNe), where the yield models of BrHNe and PISNe explain Fe, Ne, and O abundance ratios of GN-z11. The [O/Fe] measurement is not too low to rule out the connection between GN-z11 and globular clusters (GCs) previously suggested by the nitrogen abundance, but rather confirms the connection with a GC population at high [N/O] if a metal dilution process exists.
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Submitted 19 July, 2024;
originally announced July 2024.
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Giant gate-controlled room temperature odd-parity magnetoresistance in magnetized bilayer graphene
Authors:
Divya Sahani,
Sunit Das,
Kenji Watanabe,
Takashi Taniguchi,
Amit Agarwal,
Aveek Bid
Abstract:
Magnetotransport measurements are crucial for understanding the Fermi surface properties, magnetism, and topology in quantum materials. Here, we report the discovery of giant room temperature odd-parity magnetoresistance (OMR) in a bilayer graphene (BLG) heterostructure interfaced with Cr$_2$Te$_2$Ge$_6$ (CGT). Using magnetotransport measurements, we demonstrate that the BLG/CGT heterostructure ex…
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Magnetotransport measurements are crucial for understanding the Fermi surface properties, magnetism, and topology in quantum materials. Here, we report the discovery of giant room temperature odd-parity magnetoresistance (OMR) in a bilayer graphene (BLG) heterostructure interfaced with Cr$_2$Te$_2$Ge$_6$ (CGT). Using magnetotransport measurements, we demonstrate that the BLG/CGT heterostructure exhibits a significant antisymmetric longitudinal magnetoresistance, indicative of intrinsic time-reversal symmetry (TRS) breaking in the system. We show that the OMR is tunable via electrostatic gating. Additionally, the OMR is pronounced near the band edges and diminishes with increasing charge carrier density in graphene. Our theoretical analysis reveals that this phenomenon arises from the coupling of the out-of-plane components of Berry curvature and orbital magnetic moment to the applied magnetic field in a TRS-broken system. Our findings establish OMR as a significant probe for TRS breaking in quantum materials in which the crystal symmetries preclude the appearance of anomalous Hall effect.
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Submitted 19 July, 2024;
originally announced July 2024.
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Electrical pumping of h-BN single-photon sources in van der Waals heterostructures
Authors:
Mihyang Yu,
Jeonghan Lee,
Kenji Watanabe,
Takashi Taniguchi,
Jieun Lee
Abstract:
Atomic defects in solids offer a versatile basis to study and realize quantum phenomena and information science in various integrated systems. All-electrical pumping of single defects to create quantum light emission has been realized in several platforms including color centers in diamond, silicon carbide, and zinc oxide, which could lead to the circuit network of electrically triggered single-ph…
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Atomic defects in solids offer a versatile basis to study and realize quantum phenomena and information science in various integrated systems. All-electrical pumping of single defects to create quantum light emission has been realized in several platforms including color centers in diamond, silicon carbide, and zinc oxide, which could lead to the circuit network of electrically triggered single-photon sources. However, a wide conduction channel which reduces the carrier injection per defect site has been a major obstacle. Here, we conceive and realize a novel device concept to construct electrically pumped single-photon sources using a van der Waals stacked structure with atomic plane precision. Defect-induced tunneling currents across graphene and NbSe2 electrodes sandwiching an atomically thin h-BN layer allows persistent and repeatable generation of non-classical light from h-BN. The collected emission photon energies range between 1.4 and 2.9 eV, revealing the electrical excitation of a variety of atomic defects. By analyzing the dipole axis of observed emitters, we further confirm that emitters are crystallographic defect complexes of h-BN crystal. Our work facilitates implementing efficient and miniaturized single-photon devices in van der Waals platforms toward applications in quantum optoelectronics.
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Submitted 19 July, 2024;
originally announced July 2024.
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Isospin Pomeranchuk effect and finite temperature resistivity minimum in rhombohedral graphene
Authors:
Ludwig Holleis,
Tian Xie,
Siyuan Xu,
Haoxin Zhou,
Caitlin L. Patterson,
Archisman Panigrahi,
Takashi Taniguchi,
Kenji Watanabe,
Leonid S. Levitov,
Chenhao Jin,
Erez Berg,
Andrea F. Young
Abstract:
Magnetism typically arises from the effect of exchange interactions on highly localized fermionic wave functions in f- and d-atomic orbitals. In rhombohedral graphene multilayers, in contrast, magnetism -- manifesting as spontaneous polarization into one or more spin and valley flavors[1-7]-originates from fully itinerant electrons near a Van Hove singularity. Here, we show that despite the absenc…
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Magnetism typically arises from the effect of exchange interactions on highly localized fermionic wave functions in f- and d-atomic orbitals. In rhombohedral graphene multilayers, in contrast, magnetism -- manifesting as spontaneous polarization into one or more spin and valley flavors[1-7]-originates from fully itinerant electrons near a Van Hove singularity. Here, we show that despite the absence of localized electronic orbitals on the scale of the interparticle separation, rhombohedral graphene bi- and trilayers show thermodynamic signatures typically associated with disordered local magnetic moments. Specifically, while long range valley order vanishes at temperatures of a few Kelvin, thermodynamic characteristics of fluctuating moments, probed via both electronic compressibility[2-4] and exciton sensing measurements[8], survive to temperatures an order of magnitude higher. Measurements of the electronic entropy in this regime reveal a contribution of $ΔS \approx 1k_B$/charge carrier, onsetting at the Curie temperature, while first order phase transitions show an isospin "Pomeranchuk effect" in which the fluctuating moment phase is entropically favored over the nearby symmetric Fermi liquid[9, 10]. Our results imply that despite the itinerant nature of the electron wave functions, the spin- and valley polarization of individual electrons are decoupled, a phenomenon typically associated with localized moments, as happens, for example, in solid 3He[11]. Transport measurements, surprisingly, show a finite temperature resistance minimum within the fluctuating moment regime, which we attribute to the interplay of fluctuating magnetic moments and electron phonon scattering. Our results highlight the universality of soft isospin modes to two dimensional flat band systems and their possible relevance both to low-temperature ground states and high temperature transport anomalies.
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Submitted 18 July, 2024;
originally announced July 2024.
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Observation of Ferromagnetic Phase in the Second Moiré Band of Twisted MoTe2
Authors:
Liheng An,
Haiyang Pan,
Wen-Xuan Qiu,
Naizhou Wang,
Shihao Ru,
Qinghai Tan,
Xuran Dai,
Xiangbin Cai,
Qiuyu Shang,
Xiufang Lu,
Hao Jiang,
Xiaodan Lyu,
Kenji Watanabe,
Takashi Taniguchi,
Fengcheng Wu,
Wei-bo Gao
Abstract:
Flat bands and electron correlation in moiré lattices give rise to many exotic phases, including Mott insulators, superconductivity, and topological states. Within the first moiré band, integer and fractional quantum anomalous Hall effects have been observed in twisted bilayer MoTe2 (tMoTe2) at one hole doping and fractional doping per moiré unit cell, respectively. When the second moiré band is f…
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Flat bands and electron correlation in moiré lattices give rise to many exotic phases, including Mott insulators, superconductivity, and topological states. Within the first moiré band, integer and fractional quantum anomalous Hall effects have been observed in twisted bilayer MoTe2 (tMoTe2) at one hole doping and fractional doping per moiré unit cell, respectively. When the second moiré band is fully hole doped, quantum spin Hall insulator has also been reported in tMoTe2 at a certain twist angle. Exotic topological states together with ferromagnetic (FM) states in the high moiré band can potentially exist as well. In this study, we report the observation of a FM phase in the second moiré band in tMoTe2. The FM phase can be tuned by both the doping level and displacement field. At filling around 2.58 holes per moiré unit cell, the FM phase reaches a Curie temperature of 3.5 K. A large displacement field can suppress the FM phase, like the FM phase at the filling of -1. Our results demonstrate the realization of time-reversal symmetry-breaking states in the higher moiré bands in tMoTe2.
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Submitted 18 July, 2024;
originally announced July 2024.
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Measuring Phonon Dispersion and Electron-Phason Coupling in Twisted Bilayer Graphene with a Cryogenic Quantum Twisting Microscope
Authors:
John Birkbeck,
Jiewen Xiao,
Alon Inbar,
Takashi Taniguchi,
Kenji Watanabe,
Erez Berg,
Leonid Glazman,
Francisco Guinea,
Felix von Oppen,
Shahal Ilani
Abstract:
The coupling between electrons and phonons is one of the fundamental interactions in solids, underpinning a wide range of phenomena such as resistivity, heat conductivity, and superconductivity. However, direct measurements of this coupling for individual phonon modes remains a significant challenge. In this work, we introduce a novel technique for mapping phonon dispersions and electron phonon co…
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The coupling between electrons and phonons is one of the fundamental interactions in solids, underpinning a wide range of phenomena such as resistivity, heat conductivity, and superconductivity. However, direct measurements of this coupling for individual phonon modes remains a significant challenge. In this work, we introduce a novel technique for mapping phonon dispersions and electron phonon coupling (EPC) in van der Waals materials. By generalizing the quantum twisting microscope to cryogenic temperatures, we demonstrate its capability to map not only electronic dispersions via elastic momentum-conserving tunnelling, but also phononic dispersions through inelastic momentum-conserving tunnelling. Crucially, the inelastic tunnelling strength provides a direct and quantitative measure of the momentum and mode resolved EPC. We use this technique to measure the phonon spectrum and EPC of twisted bilayer graphene (TBG). Surprisingly, we find that unlike standard acoustic phonons, whose coupling to electrons diminishes as their momentum goes to zero, TBG exhibits a low energy mode whose coupling increases with decreasing twist angle. We show that this unusual coupling arises from the modulation of the inter-layer tunnelling by a layer-antisymmetric 'phason' mode of the moiré system. The technique demonstrated here opens the way for probing a large variety of other neutral collective modes that couple to electronic tunnelling, including plasmons, magnons and spinons in quantum materials.
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Submitted 18 July, 2024;
originally announced July 2024.
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Optical control of multiple resistance levels in graphene for memristic applications
Authors:
Harsimran Kaur Mann,
Mainak Mondal,
Vivek Sah,
Kenji Watanabe,
Takashi Taniguchi,
Akshay Singh,
Aveek Bid
Abstract:
Neuromorphic computing has emphasized the need for memristors with non-volatile, multiple conductance levels. This paper demonstrates the potential of hexagonal boron nitride (hBN)/graphene heterostructures to act as memristors with multiple resistance states that can be optically tuned using visible light. The number of resistance levels in graphene can be controlled by modulating doping levels,…
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Neuromorphic computing has emphasized the need for memristors with non-volatile, multiple conductance levels. This paper demonstrates the potential of hexagonal boron nitride (hBN)/graphene heterostructures to act as memristors with multiple resistance states that can be optically tuned using visible light. The number of resistance levels in graphene can be controlled by modulating doping levels, achieved by varying the electric field strength or adjusting the duration of optical illumination. Our measurements show that this photodoping of graphene results from the optical excitation of charge carriers from the nitrogen-vacancy levels of hBN to its conduction band, with these carriers then being transferred to graphene by the gate-induced electric field. We develop a quantitative model to describe our observations. Additionally, utilizing our device architecture, we propose a memristive crossbar array for vector-matrix multiplications.
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Submitted 18 July, 2024;
originally announced July 2024.
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Enhanced optical properties of MoSe$_2$ grown by molecular beam epitaxy on hexagonal boron nitride
Authors:
C. Vergnaud,
V. Tiwari,
L. Ren,
T. Taniguchi,
K. Watanabe,
H. Okuno,
I. Gomes de Moraes,
A. Marty,
C. Robert,
X. Marie,
M. Jamet
Abstract:
Transition metal dichalcogenides (TMD) like MoSe$_2$ exhibit remarkable optical properties such as intense photoluminescence (PL) in the monolayer form. To date, narrow-linewidth PL is only achieved in micrometer-sized exfoliated TMD flakes encapsulated in hexagonal boron nitride (hBN). In this work, we develop a growth strategy to prepare monolayer MoSe$_2$ on hBN flakes by molecular beam epitaxy…
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Transition metal dichalcogenides (TMD) like MoSe$_2$ exhibit remarkable optical properties such as intense photoluminescence (PL) in the monolayer form. To date, narrow-linewidth PL is only achieved in micrometer-sized exfoliated TMD flakes encapsulated in hexagonal boron nitride (hBN). In this work, we develop a growth strategy to prepare monolayer MoSe$_2$ on hBN flakes by molecular beam epitaxy in the van der Waals regime. It constitutes the first step towards the development of large area single crystalline TMDs encapsulated in hBN for potential integration in electronic or opto-electronic devices. For this purpose, we define a two-step growth strategy to achieve monolayer-thick MoSe$_2$ grains on hBN flakes. The high quality of MoSe$_2$ allows us to detect very narrow PL linewidth down to 5.5 meV at 13 K, comparable to the one of encapsulated exfoliated MoSe$_2$ flakes. Moreover, sizeable PL can be detected at room temperature as well as clear reflectivity signatures of A, B and charged excitons.
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Submitted 17 July, 2024;
originally announced July 2024.
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Effect of spin-dependent tunneling in a MoSe$_2$/Cr$_2$Ge$_2$Te$_6$ van der Waals heterostructure on exciton and trion emission
Authors:
Annika Bergmann,
Swarup Deb,
Veronika Schneidt,
Mustafa Hemaid,
Kenji Watanabe,
Takashi Taniguchi,
Rico Schwartz,
Tobias Korn
Abstract:
We study van der Waals heterostructures consisting of monolayer MoSe$_2$ and few-layer Cr$_2$Ge$_2$Te$_6$ fully encapsulated in hexagonal Boron Nitride using low-temperature photoluminescence and polar magneto-optic Kerr effect measurements. Photoluminescence characterization reveals a partial quenching and a change of the exciton-trion emission ratio in the heterostructure as compared to the isol…
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We study van der Waals heterostructures consisting of monolayer MoSe$_2$ and few-layer Cr$_2$Ge$_2$Te$_6$ fully encapsulated in hexagonal Boron Nitride using low-temperature photoluminescence and polar magneto-optic Kerr effect measurements. Photoluminescence characterization reveals a partial quenching and a change of the exciton-trion emission ratio in the heterostructure as compared to the isolated MoSe$_2$ monolayer. Under circularly polarized excitation, we find that the exciton-trion emission ratio depends on the relative orientation of excitation helicity and Cr$_2$Ge$_2$Te$_6$ magnetization, even though the photoluminescence emission itself is unpolarized. This observation hints at an ultrafast, spin-dependent interlayer charge transfer that competes with exciton and trion formation and recombination.
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Submitted 16 July, 2024;
originally announced July 2024.
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Interlayer charge transfer in graphene 2D polyimide heterostructures
Authors:
Francesca Falorsi,
Shuangjie Zhao,
Kejun Liu,
Christian Eckel,
Jonas F. Pöhls,
Wiebke Bennecke,
Marcel Reutzel,
Stefan Mathias,
Kenji Watanabe,
Takashi Taniguchi,
Zhiyong Wang,
Miroslav Polozij,
Xinliang Feng,
Thomas Heine,
R. Thomas Weitz
Abstract:
The vertical integration of multiple two-dimensional (2D) materials in heterostructures, held together by van der Waals forces, has opened unprecedented possibilities for modifying the (opto-)electronic properties of nanodevices. Graphene, with its remarkable opto-electronic properties, is an ideal candidate for such applications. Further candidates are 2D polymers, crystalline polymeric materials…
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The vertical integration of multiple two-dimensional (2D) materials in heterostructures, held together by van der Waals forces, has opened unprecedented possibilities for modifying the (opto-)electronic properties of nanodevices. Graphene, with its remarkable opto-electronic properties, is an ideal candidate for such applications. Further candidates are 2D polymers, crystalline polymeric materials with customizable structure and electronic properties that can be synthesized in all mathematically possible Bravais lattices. In this study, we investigated the optoelectronic properties of a heterostructure created by pristine graphene and a rectangular 2D polyimide (2DPI) film. This imprints a new superlattice on graphene in conjunction with a direct influence on its electronic properties. Theoretical and experimental analyses reveal that interlayer charge exchange between the 2D polymer and graphene induces hole doping in the graphene layer. We have also observed that the properties of the heterostructure are dependent on the substrate used in experiments, likely due to the porous character of the 2DPI allowing direct interaction of graphene with the support. These findings highlight the unique ability to tailor functionalities in 2D polymers-based heterostructures, allowing the development of optoelectronic devices with precisely engineered properties and stimulating further exploration of the diverse phenomena accessible through tailored designs of the 2D polymers.
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Submitted 16 July, 2024;
originally announced July 2024.
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Dynamical Control of Excitons in Atomically Thin Semiconductors
Authors:
Eric L. Peterson,
Trond I. Andersen,
Giovanni Scuri,
Andrew Y. Joe,
Andrés M. Mier Valdivia,
Xiaoling Liu,
Alexander A. Zibrov,
Bumho Kim,
Takashi Taniguchi,
Kenji Watanabe,
James Hone,
Valentin Walther,
Hongkun Park,
Philip Kim,
Mikhail D. Lukin
Abstract:
Excitons in transition metal dichalcogenides (TMDs) have emerged as a promising platform for novel applications ranging from optoelectronic devices to quantum optics and solid state quantum simulators. While much progress has been made towards characterizing and controlling excitons in TMDs, manipulating their properties during the course of their lifetime - a key requirement for many optoelectron…
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Excitons in transition metal dichalcogenides (TMDs) have emerged as a promising platform for novel applications ranging from optoelectronic devices to quantum optics and solid state quantum simulators. While much progress has been made towards characterizing and controlling excitons in TMDs, manipulating their properties during the course of their lifetime - a key requirement for many optoelectronic device and information processing modalities - remains an outstanding challenge. Here we combine long-lived interlayer excitons in angle-aligned MoSe$_2$/WSe$_2$ heterostructures with fast electrical control to realize dynamical control schemes, in which exciton properties are not predetermined at the time of excitation but can be dynamically manipulated during their lifetime. Leveraging the out-of-plane exciton dipole moment, we use electric fields to demonstrate dynamical control over the exciton emission wavelength. Moreover, employing a patterned gate geometry, we demonstrate rapid local sample doping and toggling of the radiative decay rate through exciton-charge interactions during the exciton lifetime. Spatially mapping the exciton response reveals charge redistribution, offering a novel probe of electronic transport in twisted TMD heterostructures. Our results establish the feasibility of dynamical exciton control schemes, unlocking new directions for exciton-based information processing and optoelectronic devices, and the realization of excitonic phenomena in TMDs.
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Submitted 17 July, 2024; v1 submitted 15 July, 2024;
originally announced July 2024.
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EyeDentify: A Dataset for Pupil Diameter Estimation based on Webcam Images
Authors:
Vijul Shah,
Ko Watanabe,
Brian B. Moser,
Andreas Dengel
Abstract:
In this work, we introduce EyeDentify, a dataset specifically designed for pupil diameter estimation based on webcam images. EyeDentify addresses the lack of available datasets for pupil diameter estimation, a crucial domain for understanding physiological and psychological states traditionally dominated by highly specialized sensor systems such as Tobii. Unlike these advanced sensor systems and a…
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In this work, we introduce EyeDentify, a dataset specifically designed for pupil diameter estimation based on webcam images. EyeDentify addresses the lack of available datasets for pupil diameter estimation, a crucial domain for understanding physiological and psychological states traditionally dominated by highly specialized sensor systems such as Tobii. Unlike these advanced sensor systems and associated costs, webcam images are more commonly found in practice. Yet, deep learning models that can estimate pupil diameters using standard webcam data are scarce. By providing a dataset of cropped eye images alongside corresponding pupil diameter information, EyeDentify enables the development and refinement of models designed specifically for less-equipped environments, democratizing pupil diameter estimation by making it more accessible and broadly applicable, which in turn contributes to multiple domains of understanding human activity and supporting healthcare. Our dataset is available at https://vijulshah.github.io/eyedentify/.
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Submitted 15 July, 2024;
originally announced July 2024.
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Imaging Coulomb interactions and migrating Dirac cones in twisted graphene by local quantum oscillations
Authors:
Matan Bocarsly,
Indranil Roy,
Vishal Bhardwaj,
Matan Uzan,
Patrick Ledwith,
Gal Shavit,
Nasrin Banu,
Yaozhang Zhou,
Yuri Myasoedov,
Kenji Watanabe,
Takashi Taniguchi,
Yuval Oreg,
Dan Parker,
Yuval Ronen,
Eli Zeldov
Abstract:
Flat band moiré graphene systems have emerged as a quintessential platform to investigate correlated phases of matter. A plethora of interaction-driven ground states have been proposed, and yet despite extensive experimental effort, there has been little direct evidence that distinguishes between the various phases, in particular near charge neutrality point. Here, we use a nanoscale scanning supe…
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Flat band moiré graphene systems have emerged as a quintessential platform to investigate correlated phases of matter. A plethora of interaction-driven ground states have been proposed, and yet despite extensive experimental effort, there has been little direct evidence that distinguishes between the various phases, in particular near charge neutrality point. Here, we use a nanoscale scanning superconducting quantum interference device to image the local thermodynamic quantum oscillations in alternating-twist trilayer graphene at magnetic fields as low as 56 mT, which reveal ultrafine details of the density of states and of the renormalization of the single-particle band structure by Coulomb interactions. We find that the charging self-energy due to occupied electronic states, is critical in explaining the high carrier density physics. At half-filling of the conduction flat band, we observe a Stoner-like symmetry breaking, suggesting that it is the most robust mechanism in the hierarchy of phase transitions. On approaching charge neutrality, where the charging energy is negligible and exchange energy is dominant, we find the ground state to be a nematic semimetal which is favored over gapped states in the presence of heterostrain. In the revealed semimetallic phase, the flat-band Dirac cones migrate towards the mini-Brillouin zone center, spontaneously breaking the C_3 rotational symmetry. Our low-field local quantum oscillations technique presents an alluring avenue to explore the ground states of diverse strongly interacting van der Waals systems.
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Submitted 15 July, 2024;
originally announced July 2024.
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A Unifying Approach to Product Constructions for Quantitative Temporal Inference
Authors:
Kazuki Watanabe,
Sebastian Junges,
Jurriaan Rot,
Ichiro Hasuo
Abstract:
Probabilistic programs are a powerful and convenient approach to formalise distributions over system executions. A classical verification problem for probabilistic programs is temporal inference: to compute the likelihood that the execution traces satisfy a given temporal property. This paper presents a general framework for temporal inference, which applies to a rich variety of quantitative model…
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Probabilistic programs are a powerful and convenient approach to formalise distributions over system executions. A classical verification problem for probabilistic programs is temporal inference: to compute the likelihood that the execution traces satisfy a given temporal property. This paper presents a general framework for temporal inference, which applies to a rich variety of quantitative models including those that arise in the operational semantics of probabilistic and weighted programs.
The key idea underlying our framework is that in a variety of existing approaches, the main construction that enables temporal inference is that of a product between the system of interest and the temporal property. We provide a unifying mathematical definition of product constructions, enabled by the realisation that 1) both systems and temporal properties can be modelled as coalgebras and 2) product constructions are distributive laws in this context. Our categorical framework leads us to our main contribution: a sufficient condition for correctness, which is precisely what enables to use the product construction for temporal inference.
We show that our framework can be instantiated to naturally recover a number of disparate approaches from the literature including, e.g., partial expected rewards in Markov reward models, resource-sensitive reachability analysis, and weighted optimization problems. Further, we demonstrate a product of weighted programs and weighted temporal properties as a new instance to show the scalability of our approach.
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Submitted 15 July, 2024;
originally announced July 2024.
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Spin-filter tunneling detection of antiferromagnetic resonance with electrically-tunable damping
Authors:
Thow Min Jerald Cham,
Daniel G. Chica,
Kenji Watanabe,
Takashi Taniguchi,
Xavier Roy,
Yunqiu Kelly Luo,
Daniel C. Ralph
Abstract:
Antiferromagnetic spintronics offers the potential for higher-frequency operations compared to ferromagnetic spintronics and improved insensitivity to magnetic fields. However, previous electrical techniques to detect antiferromagnetic dynamics have required millimeter-scale samples to achieve measurable signals. Here we demonstrate direct electrical detection of antiferromagnetic resonance in dev…
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Antiferromagnetic spintronics offers the potential for higher-frequency operations compared to ferromagnetic spintronics and improved insensitivity to magnetic fields. However, previous electrical techniques to detect antiferromagnetic dynamics have required millimeter-scale samples to achieve measurable signals. Here we demonstrate direct electrical detection of antiferromagnetic resonance in devices 1000 times smaller using spin-filter tunneling in micron-scale PtTe$_2$/bilayer CrSBr/graphite junctions in which the tunnel barrier is the van der Waals antiferromaget CrSBr. This sample geometry allows not only efficient detection, but also electrical control of the antiferromagnetic resonance through spin-orbit torque from the PtTe$_2$ electrode. The ability to efficiently detect and control antiferromagnetic resonance provides the means to make detailed studies of the physics governing these high-frequency dynamics and to pursue applications including radiation sources, modulators, and detectors.
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Submitted 12 July, 2024;
originally announced July 2024.
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Centrality dependence of Lévy-stable two-pion Bose-Einstein correlations in $\sqrt{s_{_{NN}}}=200$ GeV Au$+$Au collisions
Authors:
PHENIX Collaboration,
N. J. Abdulameer,
U. Acharya,
A. Adare,
C. Aidala,
N. N. Ajitanand,
Y. Akiba,
R. Akimoto,
H. Al-Ta'ani,
J. Alexander,
A. Angerami,
K. Aoki,
N. Apadula,
Y. Aramaki,
H. Asano,
E. C. Aschenauer,
E. T. Atomssa,
T. C. Awes,
B. Azmoun,
V. Babintsev,
M. Bai,
B. Bannier,
K. N. Barish,
B. Bassalleck,
S. Bathe
, et al. (377 additional authors not shown)
Abstract:
The PHENIX experiment measured the centrality dependence of two-pion Bose-Einstein correlation functions in $\sqrt{s_{_{NN}}}=200$~GeV Au$+$Au collisions at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory. The data are well represented by Lévy-stable source distributions. The extracted source parameters are the correlation-strength parameter $λ$, the Lévy index of stability…
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The PHENIX experiment measured the centrality dependence of two-pion Bose-Einstein correlation functions in $\sqrt{s_{_{NN}}}=200$~GeV Au$+$Au collisions at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory. The data are well represented by Lévy-stable source distributions. The extracted source parameters are the correlation-strength parameter $λ$, the Lévy index of stability $α$, and the Lévy-scale parameter $R$ as a function of transverse mass $m_T$ and centrality. The $λ(m_T)$ parameter is constant at larger values of $m_T$, but decreases as $m_T$ decreases. The Lévy scale parameter $R(m_T)$ decreases with $m_T$ and exhibits proportionality to the length scale of the nuclear overlap region. The Lévy exponent $α(m_T)$ is independent of $m_T$ within uncertainties in each investigated centrality bin, but shows a clear centrality dependence. At all centralities, the Lévy exponent $α$ is significantly different from that of Gaussian ($α=2$) or Cauchy ($α=1$) source distributions. Comparisons to the predictions of Monte-Carlo simulations of resonance-decay chains show that in all but the most peripheral centrality class (50%-60%), the obtained results are inconsistent with the measurements, unless a significant reduction of the in-medium mass of the $η'$ meson is included. In each centrality class, the best value of the in-medium $η'$ mass is compared to the mass of the $η$ meson, as well as to several theoretical predictions that consider restoration of $U_A(1)$ symmetry in hot hadronic matter.
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Submitted 11 July, 2024;
originally announced July 2024.
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Electrical switching of spin-polarized light-emitting diodes based on a 2D CrI3/hBN/WSe2 heterostructure
Authors:
Jianchen Dang,
Tongyao Wu,
Shuohua Yan,
Kenji Watanabe,
Takashi Taniguchi,
Hechang Lei,
Xiao-Xiao Zhang
Abstract:
Spin-polarized light-emitting diodes (spin-LEDs) convert the electronic spin information to photon circular polarization, offering potential applications including spin amplification, optical communications, and advanced imaging. The conventional control of the emitted light's circular polarization requires a change in the external magnetic field, limiting the operation conditions of spin-LEDs. He…
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Spin-polarized light-emitting diodes (spin-LEDs) convert the electronic spin information to photon circular polarization, offering potential applications including spin amplification, optical communications, and advanced imaging. The conventional control of the emitted light's circular polarization requires a change in the external magnetic field, limiting the operation conditions of spin-LEDs. Here, we demonstrate an atomically thin spin-LED device based on a heterostructure of a monolayer WSe2 and a few-layer antiferromagnetic CrI3, separated by a thin hBN tunneling barrier. The CrI3 and hBN layers polarize the spin of the injected carriers into the WSe2. With the valley optical selection rule in the monolayer WSe2, the electroluminescence exhibits a high degree of circular polarization that follows the CrI3 magnetic states. Importantly, we show an efficient electrical tuning, including a sign reversal, of the electroluminescent circular polarization by applying an electrostatic field due to the electrical tunability of the few-layer CrI3 magnetization. Our results establish a new platform to achieve on-demand operation of nanoscale spin-LED and electrical control of helicity for device applications.
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Submitted 9 July, 2024;
originally announced July 2024.
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Efficient Electron Spin Relaxation by Chiral Phonons in WSe$_2$ Monolayers
Authors:
D. Lagarde,
M. Glazov,
V. Jindal,
K. Mourzidis,
Iann Gerber,
A. Balocchi,
L. Lombez,
P. Renucci,
T. Taniguchi,
K. Watanabe,
C. Robert,
X. Marie
Abstract:
In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a consequence, for electrons occupying bottom conduction bands, a carrier spin flip occurs only if there is a simultaneous change of valley. However, very little is…
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In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a consequence, for electrons occupying bottom conduction bands, a carrier spin flip occurs only if there is a simultaneous change of valley. However, very little is known about the intra-valley spin relaxation processes. In this work we have performed stationary and time-resolved photoluminescence measurements in high quality WSe$_2$ monolayers. Our experiments highlight an efficient relaxation from bright to dark excitons, due to a fast intra-valley electron transfer from the top to the bottom conduction band with opposite spins. A combination of experiments and theoretical analysis allows us to infer a spin relaxation time of about $τ_s\sim10~$ps, driven by the interplay between $Γ$-valley chiral phonons and spin-orbit mixing.
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Submitted 9 July, 2024;
originally announced July 2024.
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Uniaxial plasmon polaritons $\textit{via}$ charge transfer at the graphene/CrSBr interface
Authors:
Daniel J. Rizzo,
Eric Seewald,
Fangzhou Zhao,
Jordan Cox,
Kaichen Xie,
Rocco A. Vitalone,
Francesco L. Ruta,
Daniel G. Chica,
Yinming Shao,
Sara Shabani,
Evan J. Telford,
Matthew C. Strasbourg,
Thomas P. Darlington,
Suheng Xu,
Siyuan Qiu,
Aravind Devarakonda,
Takashi Taniguchi,
Kenji Watanabe,
Xiaoyang Zhu,
P. James Schuck,
Cory R. Dean,
Xavier Roy,
Andrew J. Millis,
Ting Cao,
Angel Rubio
, et al. (2 additional authors not shown)
Abstract:
Graphene is a privileged 2D platform for hosting confined light-matter excitations known as surface plasmon-polaritons (SPPs), as it possesses low intrinsic losses with a high degree of optical confinement. However, the inherently isotropic optical properties of graphene limit its ability to guide and focus SPPs, making it less suitable than anisotropic elliptical and hyperbolic materials as a pla…
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Graphene is a privileged 2D platform for hosting confined light-matter excitations known as surface plasmon-polaritons (SPPs), as it possesses low intrinsic losses with a high degree of optical confinement. However, the inherently isotropic optical properties of graphene limit its ability to guide and focus SPPs, making it less suitable than anisotropic elliptical and hyperbolic materials as a platform for polaritonic lensing and canalization. Here, we present the graphene/CrSBr heterostructure as an engineered 2D interface that hosts highly anisotropic SPP propagation over a wide range of frequencies in the mid-infrared and terahertz. Using a combination of scanning tunneling microscopy (STM), scattering-type scanning near-field optical microscopy (s-SNOM), and first-principles calculations, we demonstrate mutual doping in excess of 10$^{13}$ cm$^{-2}$ holes/electrons between the interfacial layers of graphene/CrSBr heterostructures. SPPs in graphene activated by charge transfer interact with charge-induced anisotropic intra- and interband transitions in the interfacial doped CrSBr, leading to preferential SPP propagation along the quasi-1D chains that compose each CrSBr layer. This multifaceted proximity effect both creates SPPs and endows them with anisotropic transport and propagation lengths that differ by an order-of-magnitude between the two in-plane crystallographic axes of CrSBr.
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Submitted 9 July, 2024;
originally announced July 2024.
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Quantitative measurement of viscosity in two-dimensional electron fluids
Authors:
Yihang Zeng,
Haoyu Guo,
Olivia M. Ghosh,
Kenji Watanabe,
Takashi Taniguchi,
Leonid S. Levitov,
Cory R. Dean
Abstract:
Electron hydrodynamics is an emerging framework that describes dynamics of interacting electron systems as conventional fluids. While evidence for hydrodynamic-like transport is reported in a variety of two-dimensional materials, precise quantitative measurement of the core parameter, electron viscosity, remains challenging. In this work, we demonstrate that magnetoresistance in Corbino-shaped gra…
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Electron hydrodynamics is an emerging framework that describes dynamics of interacting electron systems as conventional fluids. While evidence for hydrodynamic-like transport is reported in a variety of two-dimensional materials, precise quantitative measurement of the core parameter, electron viscosity, remains challenging. In this work, we demonstrate that magnetoresistance in Corbino-shaped graphene devices offers a simultaneous Ohmmeter/viscosometer, allowing us to disentangle the individual Ohmic and viscous contributions to the transport response, even in the mixed flow regime. Most surprising, we find that in both monolayer and bilayer graphene, the effective electron-electron scattering rate scales linearly with temperature, at odds with the expected $T$-squared dependence expected from conventional Fermi liquid theory, but consistent with a recently identified tomographic flow regime, which was theoretically conjectured to be generic for two-dimensional charged fluids.
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Submitted 6 July, 2024;
originally announced July 2024.
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Super-resolution imaging of nanoscale inhomogeneities in hBN-covered and encapsulated few-layer graphene
Authors:
Lina Jäckering,
Konstantin G. Wirth,
Lukas Conrads,
Jonas B. Profe,
Alexander Rothstein,
Hristiyana Kyoseva,
Kenji Watanabe,
Takashi Taniguchi,
Dante M. Kennes,
Christoph Stampfer,
Lutz Waldecker,
Thomas Taubner
Abstract:
Encapsulating few-layer graphene (FLG) in hexagonal boron nitride (hBN) can cause nanoscale inhomogeneities in the FLG, including changes in stacking domains and topographic defects. Due to the diffraction limit, characterizing these inhomogeneities is challenging. Recently, the visualization of stacking domains in encapsulated four-layer graphene (4LG) has been demonstrated with phonon polariton…
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Encapsulating few-layer graphene (FLG) in hexagonal boron nitride (hBN) can cause nanoscale inhomogeneities in the FLG, including changes in stacking domains and topographic defects. Due to the diffraction limit, characterizing these inhomogeneities is challenging. Recently, the visualization of stacking domains in encapsulated four-layer graphene (4LG) has been demonstrated with phonon polariton (PhP)-assisted near-field imaging. However, the underlying coupling mechanism and ability to image subdiffractional-sized inhomogeneities remain unknown. Here, we retrieve direct replicas and magnified images of subdiffractional-sized inhomogeneities in hBN-covered trilayer graphene (TLG) and encapsulated 4LG, enabled by the hyperlensing effect. This hyperlensing effect is mediated by hBN's hyperbolic PhP that couple to the FLG's plasmon polaritons. Using near-field microscopy, we identify the coupling by determining the polariton dispersion in hBN-covered TLG to be stacking-dependent. Our work demonstrates super-resolution and magnified imaging of inhomogeneities, paving the way for the realization of homogeneous encapsulated FLG transport samples to study correlated physics.
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Submitted 8 July, 2024; v1 submitted 5 July, 2024;
originally announced July 2024.
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Superballistic conduction in hydrodynamic antidot graphene superlattices
Authors:
Jorge Estrada-Álvarez,
Juan Salvador-Sánchez,
Ana Pérez-Rodríguez,
Carlos Sánchez-Sánchez,
Vito Clericò,
Daniel Vaquero,
Kenji Watanabe,
Takashi Taniguchi,
Enrique Diez,
Francisco Domínguez-Adame,
Mario Amado,
Elena Díaz
Abstract:
Viscous electron flow exhibits exotic signatures such as superballistic conduction. Bending the geometry of the device is a must to observe hydrodynamic effects. To this end, we build three antidot graphene superlattices with different hole diameters. We measure their electrical properties at various temperatures and under the effect of a perpendicular magnetic field. We find an enhanced superball…
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Viscous electron flow exhibits exotic signatures such as superballistic conduction. Bending the geometry of the device is a must to observe hydrodynamic effects. To this end, we build three antidot graphene superlattices with different hole diameters. We measure their electrical properties at various temperatures and under the effect of a perpendicular magnetic field. We find an enhanced superballistic effect, suggesting the effectiveness of the geometry at bending the electron flow. In addition, superballistic conduction behaves non-monotonically with the magnetic field, which is related with the ballistic-hydrodynamic transition. We also analyze the device resistance as a function of the size of the antidot superlattice to find characteristic scaling laws describing the different transport regimes. We prove that the antidot superlattice is a convenient geometry for realizing hydrodynamic flow, and the experiment provides valuable explanations for the technologically relevant effects of superballistic conduction and scaling laws.
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Submitted 5 July, 2024;
originally announced July 2024.
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Black box work extraction and composite hypothesis testing
Authors:
Kaito Watanabe,
Ryuji Takagi
Abstract:
Work extraction is one of the most central processes in quantum thermodynamics. However, the prior analysis of optimal extractable work has been restricted to a limited operational scenario where complete information about the initial state is given. Here, we introduce a general framework of black box work extraction, which addresses the inaccessibility of information on the initial state. We show…
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Work extraction is one of the most central processes in quantum thermodynamics. However, the prior analysis of optimal extractable work has been restricted to a limited operational scenario where complete information about the initial state is given. Here, we introduce a general framework of black box work extraction, which addresses the inaccessibility of information on the initial state. We show that the optimal extractable work in the black box setting is completely characterized by the performance of a composite hypothesis testing task, a fundamental problem in information theory.We employ this general relation to reduce the asymptotic black box work extraction to the quantum Stein's lemma in composite hypothesis testing, allowing us to provide their exact characterization in terms of the Helmholtz free energy. We also show a new quantum Stein's lemma motivated in this physical setting, where a composite hypothesis contains a certain correlation. Our work exhibits the importance of information about the initial state and gives a new interpretation of the quantities in the composite quantum hypothesis testing, encouraging the interplay between the physical settings and the information theory.
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Submitted 16 July, 2024; v1 submitted 3 July, 2024;
originally announced July 2024.
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Single-Ion Spectroscopy of h-BN Point Defect Fluorescence in Liquid Environments
Authors:
Yecun Wu,
Kun Xu,
Hori Pada Sarker,
Takashi Taniguchi,
Kenji Watanabe,
Frank Abild-Pedersen,
Arun Majumdar,
Yi Cui,
Yan-Kai Tzeng,
Steven Chu
Abstract:
Understanding individual ions in solutions is essential for advancing our knowledge of complex chemical systems. However, tracking and detecting ions at the single-ion level in liquid environments remains a challenge. We introduce a strategy for visualization and differentiation of different ions in liquid environment via point defects in hexagonal boron nitride (h-BN) as the ion sensor. Ions inte…
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Understanding individual ions in solutions is essential for advancing our knowledge of complex chemical systems. However, tracking and detecting ions at the single-ion level in liquid environments remains a challenge. We introduce a strategy for visualization and differentiation of different ions in liquid environment via point defects in hexagonal boron nitride (h-BN) as the ion sensor. Ions interacting with the optically active point defects in h-BN alter emission properties, allowing us to capture these changes and visualize single ions. Using Li+ in organic electrolytes as a model, we observed a spectral shift of over 10 nm upon Li+ addition, and an over 50 nm red shift with applied electric fields due to reactions between Li+ and h-BN point defects. Frequency domain analysis further revealed the rapid dynamics of ion migration and the slow electrochemical reactions. We further spectroscopically differentiated various ions (H+, Li+, Na+, K+, Zn2+, Al3+) in aqueous solution. Each ion, with its distinct electron cloud configuration, interacts distinctively with the electron clouds of h-BN defects, resulting in specific and identifiable spectroscopic signatures. This ion sensing platform enables the direct visualization and differentiation of individual ions in a liquid environment, offering insights into chemical reactions at the single-ion level. This capability presents potential applications in various fields involving ions in liquids, including but not limited to biology, battery technology, and environmental science.
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Submitted 2 July, 2024;
originally announced July 2024.
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Enhancing resonant second harmonic generation in bilayer WSe2 by layer-dependent exciton-polaron effect
Authors:
Soonyoung Cha,
Tianyi Ouyang,
Takashi Taniguchi,
Kenji Watanabe,
Nathaniel M. Gabor,
Chun Hung Lui
Abstract:
Two-dimensional (2D) materials serve as exceptional platforms for controlled second harmonic generation (SHG), an important nonlinear optical phenomenon with diverse applications. Current approaches to SHG control often depend on non-resonant conditions or symmetry breaking via single-gate control. Here, we employ dual-gate bilayer WSe2 to demonstrate a new SHG enhancement concept that leverages s…
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Two-dimensional (2D) materials serve as exceptional platforms for controlled second harmonic generation (SHG), an important nonlinear optical phenomenon with diverse applications. Current approaches to SHG control often depend on non-resonant conditions or symmetry breaking via single-gate control. Here, we employ dual-gate bilayer WSe2 to demonstrate a new SHG enhancement concept that leverages strong exciton resonance and layer-dependent exciton-polaron effect. By selectively localizing injected holes within one layer, we induce exciton-polaron states in the hole-filled layer while maintaining normal exciton states in the charge-neutral layer. The distinct resonant conditions of these layers effectively break interlayer inversion symmetry, thereby promoting resonant SHG. Our method achieves a remarkable 40-fold enhancement of SHG at minimal electric field, equivalent to conditions near the dielectric-breakdown threshold but using only ~3% of the critical breakdown field. Our findings also reveal significant sensitivity of resonant SHG to carrier density and carrier type, with distinct enhancement and quenching observed across different gating regimes. This advancement offers an innovative approach to manipulating SHG in 2D excitonic materials and provides a potent spectroscopic tool for probing layer-dependent quantum states.
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Submitted 1 July, 2024;
originally announced July 2024.
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Correlated insulators in twisted mono-mono-bilayer graphene
Authors:
Jin Jiang,
Kenji Watanabe,
Takashi Taniguchi,
Mitali Banerjee
Abstract:
Graphene-based moiré superlattice featuring flat bands is a promising platform for studying strongly correlated states. By tuning two twist angles and displacement fields in twisted mono-mono-bilayer graphene (TMMBG), we observed a correlated metallic state evolved into a valley-polarized correlated insulator at the filling factor of $ν= -2$, with the coupling strength between the top two monolaye…
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Graphene-based moiré superlattice featuring flat bands is a promising platform for studying strongly correlated states. By tuning two twist angles and displacement fields in twisted mono-mono-bilayer graphene (TMMBG), we observed a correlated metallic state evolved into a valley-polarized correlated insulator at the filling factor of $ν= -2$, with the coupling strength between the top two monolayer graphene intensifying. Moreover, the corresponding effective g-factor obtained from fitting the thermal activation gap is enhanced with the coupling strength, suggesting that TMMBG can be harnessed for developing valleytronics devices. In addition, the observation of an unconventional correlated electron-hole insulator suggests that this state might be a candidate for an excitonic insulator, which may generated by the correlation from band nesting, which encourages further research in non-Fermi liquid physics. Our work reveals that tuning multiple twist angles can provide a unique route for studying quantum many-body states in twistronics.
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Submitted 28 June, 2024;
originally announced June 2024.
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Imaging semiconductor-to-metal transition and topological flat bands of twisted bilayer MoTe2
Authors:
Yufeng Liu,
Yu Gu,
Ting Bao,
Ning Mao,
Can Li,
Shudan Jiang,
Liang Liu,
Dandan Guan,
Yaoyi Li,
Hao Zheng,
Canhua Liu,
Kenji Watanabe,
Takashi Taniguchi,
Wenhui Duan,
Jinfeng Jia,
Xiaoxue Liu,
Yang Zhang,
Tingxin Li,
Shiyong Wang
Abstract:
Two-dimensional (2D) moiré materials have emerged as a highly tunable platform for investigating novel quantum states of matter arising from strong electronic correlations and nontrivial band topology. Recently, topological flat bands formed in 2D semiconducting moiré superlattices have attracted great interests. In particular, a series of topological quantum phases, including the long-sought frac…
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Two-dimensional (2D) moiré materials have emerged as a highly tunable platform for investigating novel quantum states of matter arising from strong electronic correlations and nontrivial band topology. Recently, topological flat bands formed in 2D semiconducting moiré superlattices have attracted great interests. In particular, a series of topological quantum phases, including the long-sought fractional quantum anomalous Hall (FQAH) effect, have recently been experimentally observed in twisted bilayer MoTe2 (tMoTe2). However, the microscopic information of tMoTe2 moiré superlattice and its electronic structure is still lacking. Here, we present scanning tunneling microscopy and spectroscopy (STM/STS) studies of the tMoTe2 moiré superlattice, with twist angles ranging from about 2.3° to 2.8°. We developed a contact-STM mode to apply pressure on tMoTe2 and observed a phase transition from band insulator to metal of tMoTe2 under pressure at the charge neutrality point. STM imaging reveals a pronounced in-plane lattice reconstruction with periodic strain redistribution in the tMoTe2, which serves as gauge fields for generating topological moiré bands. Importantly, the electronic states of the low-energy moiré flat bands primarily concentrate at the XM and MX regions as revealed by STS imaging. Such spatial distributions are nicely reproduced by our first principal calculations with a large-scale basis, suggesting the low-energy moiré flat bands are formed through the hybridization of K valley bands of the top layer and K' valley bands of the bottom layer. Overall, our findings provide compelling real-space evidence of electronic structure under pressure and topological flat bands of tMoTe2, paving the way for further STM/STS investigations of correlated topological states within the topological flat band in gate-tunable tMoTe2 devices.
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Submitted 27 June, 2024;
originally announced June 2024.
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Generalized anomalous Hall crystals in twisted bilayer-trilayer graphene
Authors:
Ruiheng Su,
Dacen Waters,
Boran Zhou,
Kenji Watanabe,
Takashi Taniguchi,
Ya-Hui Zhang,
Matthew Yankowitz,
Joshua Folk
Abstract:
In a dilute two-dimensional electron gas, Coulomb interactions can stabilize the formation of a Wigner crystal. Although Wigner crystals are topologically trivial, it has been predicted that electrons in a partially-filled band can break continuous translational symmetry and time-reversal symmetry spontaneously to form an anomalous Hall crystal (AHC). Here, we report the observation of a generaliz…
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In a dilute two-dimensional electron gas, Coulomb interactions can stabilize the formation of a Wigner crystal. Although Wigner crystals are topologically trivial, it has been predicted that electrons in a partially-filled band can break continuous translational symmetry and time-reversal symmetry spontaneously to form an anomalous Hall crystal (AHC). Here, we report the observation of a generalized AHC in twisted bilayer-trilayer graphene whose formation is seeded by the moire potential. The crystal quadruples the moire unit-cell area, coinciding with an integer quantum anomalous Hall effect. The Chern number of the state is exceptionally tunable, and can be switched reversibly between +1 and -1 by electric and magnetic fields. Recent theories have predicted the generalized AHC to act as a parent state of the fractional quantum anomalous Hall effect, pointing to twisted bilayer-trilayer graphene as a promising platform in the search for new correlated and topological phenomena.
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Submitted 25 June, 2024;
originally announced June 2024.
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Pareto Fronts for Compositionally Solving String Diagrams of Parity Games
Authors:
Kazuki Watanabe
Abstract:
Open parity games are proposed as a compositional extension of parity games with algebraic operations, forming string diagrams of parity games. A potential application of string diagrams of parity games is to describe a large parity game with a given compositional structure and solve it efficiently as a divide-and-conquer algorithm by exploiting its compositional structure. Building on our recent…
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Open parity games are proposed as a compositional extension of parity games with algebraic operations, forming string diagrams of parity games. A potential application of string diagrams of parity games is to describe a large parity game with a given compositional structure and solve it efficiently as a divide-and-conquer algorithm by exploiting its compositional structure. Building on our recent progress in open Markov decision processes, we introduce Pareto fronts of open parity games, offering a framework for multi-objective solutions. We establish the positional determinacy of open parity games with respect to their Pareto fronts through a novel translation method. Our translation converts an open parity game into a parity game tailored to a given single-objective. Furthermore, we present a simple algorithm for solving open parity games, derived from this translation that allows the application of existing efficient algorithms for parity games. Expanding on this foundation, we develop a compositional algorithm for string diagrams of parity games.
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Submitted 24 June, 2024;
originally announced June 2024.
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An antiferromagnetic diode effect in even-layered MnBi2Te4
Authors:
Anyuan Gao,
Shao-Wen Chen,
Barun Ghosh,
Jian-Xiang Qiu,
Yu-Fei Liu,
Yugo Onishi,
Chaowei Hu,
Tiema Qian,
Damien Bérubé,
Thao Dinh,
Houchen Li,
Christian Tzschaschel,
Seunghyun Park,
Tianye Huang,
Shang-Wei Lien,
Zhe Sun,
Sheng-Chin Ho,
Bahadur Singh,
Kenji Watanabe,
Takashi Taniguchi,
David C. Bell,
Arun Bansil,
Hsin Lin,
Tay-Rong Chang,
Amir Yacoby
, et al. (4 additional authors not shown)
Abstract:
In a PN junction, the separation between positive and negative charges leads to diode transport. In the past few years, the intrinsic diode transport in noncentrosymmetric polar conductors has attracted great interest, because it suggests novel nonlinear applications and provides a symmetry-sensitive probe of Fermi surface. Recently, such studies have been extended to noncentrosymmetric supercondu…
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In a PN junction, the separation between positive and negative charges leads to diode transport. In the past few years, the intrinsic diode transport in noncentrosymmetric polar conductors has attracted great interest, because it suggests novel nonlinear applications and provides a symmetry-sensitive probe of Fermi surface. Recently, such studies have been extended to noncentrosymmetric superconductors, realizing the superconducting diode effect. Here, we show that, even in a centrosymmetric crystal without directional charge separation, the spins of an antiferromagnet (AFM) can generate a spatial directionality, leading to an AFM diode effect. We observe large second-harmonic transport in a nonlinear electronic device enabled by the compensated AFM state of even-layered MnBi2Te4. We also report a novel electrical sum-frequency generation (SFG), which has been rarely explored in contrast to the well-known optical SFG in wide-gap insulators. We demonstrate that the AFM enables an in-plane field-effect transistor and harvesting of wireless electromagnetic energy. The electrical SFG establishes a powerful method to study nonlinear electronics built by quantum materials. The AFM diode effect paves the way for potential device concepts including AFM logic circuits, self-powered AFM spintronics, and other applications that potentially bridge nonlinear electronics with AFM spintronics.
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Submitted 24 June, 2024;
originally announced June 2024.
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Terahertz photocurrent probe of quantum geometry and interactions in magic-angle twisted bilayer graphene
Authors:
Roshan Krishna Kumar,
Geng Li,
Riccardo Bertini,
Swati Chaudhary,
Krystian Nowakowski,
Jeong Min Park,
Sebastian Castilla,
Zhen Zhan,
Pierre A. Pantaleón,
Hitesh Agarwal,
Sergi Battle-Porro,
Eike Icking,
Matteo Ceccanti,
Antoine Reserbat-Plantey,
Giulia Piccinini,
Julien Barrier,
Ekaterina Khestanova,
Takashi Taniguchi,
Kenji Watanabe,
Christoph Stampfer,
Gil Refael,
Francisco Guinea,
Pablo Jarillo-Herrero,
Justin C. W. Song,
Petr Stepanov
, et al. (2 additional authors not shown)
Abstract:
Moiré materials represent strongly interacting electron systems bridging topological and correlated physics. Despite significant advances, decoding wavefunction properties underlying the quantum geometry remains challenging. Here, we utilize polarization-resolved photocurrent measurements to probe magic-angle twisted bilayer graphene, leveraging its sensitivity to the Berry connection that encompa…
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Moiré materials represent strongly interacting electron systems bridging topological and correlated physics. Despite significant advances, decoding wavefunction properties underlying the quantum geometry remains challenging. Here, we utilize polarization-resolved photocurrent measurements to probe magic-angle twisted bilayer graphene, leveraging its sensitivity to the Berry connection that encompasses quantum "textures" of electron wavefunctions. Using terahertz light resonant with optical transitions of its flat bands, we observe bulk photocurrents driven by broken symmetries and reveal the interplay between electron interactions and quantum geometry. We observe inversion-breaking gapped states undetectable through quantum transport, sharp changes in the polarization axes caused by interaction-induced band renormalization, and recurring photocurrent patterns at integer fillings of the moiré unit cell that track the evolution of quantum geometry through the cascade of phase transitions. The large and tunable terahertz response intrinsic to flat-band systems offers direct insights into the quantum geometry of interacting electrons and paves the way for innovative terahertz quantum technologies.
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Submitted 24 June, 2024;
originally announced June 2024.
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Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures
Authors:
Gabriele Pasquale,
Zhe Sun,
Kenji Watanabe,
Takashi Taniguchi,
Andras Kis
Abstract:
The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics, and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here, we demonstrate a large and electrically tunable Nernst effect by combining graphene's electrical properties with indium selenide's semic…
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The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics, and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here, we demonstrate a large and electrically tunable Nernst effect by combining graphene's electrical properties with indium selenide's semiconducting nature in a field-effect geometry. Our results establish a novel platform for exploring and manipulating this thermoelectric effect, showcasing the first electrical tunability with an on/off ratio of 10^3. Moreover, photocurrent measurements reveal a stronger photo-Nernst signal in the Gr/InSe heterostructure compared to individual components. Remarkably, we observe a record-high Nernst coefficient of 66.4 μV K^(-1) T^(-1) at ultra-low temperatures and low magnetic fields, paving the way toward applications in quantum information and low-temperature emergent phenomena.
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Submitted 23 June, 2024;
originally announced June 2024.
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Tailored topotactic chemistry unlocks heterostructures of magnetic intercalation compounds
Authors:
Samra Husremović,
Oscar Gonzalez,
Berit H. Goodge,
Lilia S. Xie,
Zhizhi Kong,
Wanlin Zhang,
Sae Hee Ryu,
Stephanie M. Ribet,
Karen C. Bustillo,
Chengyu Song,
Jim Ciston,
Takashi Taniguchi,
Kenji Watanabe,
Colin Ophus,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
D. Kwabena Bediako
Abstract:
The construction of thin film heterostructures has been a widely successful archetype for fabricating materials with emergent physical properties. This strategy is of particular importance for the design of multilayer magnetic architectures in which direct interfacial spin--spin interactions between magnetic phases in dissimilar layers lead to emergent and controllable magnetic behavior. However,…
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The construction of thin film heterostructures has been a widely successful archetype for fabricating materials with emergent physical properties. This strategy is of particular importance for the design of multilayer magnetic architectures in which direct interfacial spin--spin interactions between magnetic phases in dissimilar layers lead to emergent and controllable magnetic behavior. However, crystallographic incommensurability and atomic-scale interfacial disorder can severely limit the types of materials amenable to this strategy, as well as the performance of these systems. Here, we demonstrate a method for synthesizing heterostructures comprising magnetic intercalation compounds of transition metal dichalcogenides (TMDs), through directed topotactic reaction of the TMD with a metal oxide. The mechanism of the intercalation reaction enables thermally initiated intercalation of the TMD from lithographically patterned oxide films, giving access to a new family of multi-component magnetic architectures through the combination of deterministic van der Waals assembly and directed intercalation chemistry.
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Submitted 21 June, 2024;
originally announced June 2024.
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Time-Domain Signatures of Distinct Correlated Insulators in a Moiré Superlattice
Authors:
Eric A. Arsenault,
Yiliu Li,
Birui Yang,
Takashi Taniguchi,
Kenji Watanabe,
James C. Hone,
Cory R. Dean,
Xiaodong Xu,
X. -Y. Zhu
Abstract:
Among expanding discoveries of quantum phases in moiré superlattices, correlated insulators stand out as both the most stable and most commonly observed. Despite the central importance of these states in moiré physics, little is known about their underlying nature. Here, we use pump-probe spectroscopy to show distinct time-domain signatures of correlated insulators at fillings of one (v = -1) and…
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Among expanding discoveries of quantum phases in moiré superlattices, correlated insulators stand out as both the most stable and most commonly observed. Despite the central importance of these states in moiré physics, little is known about their underlying nature. Here, we use pump-probe spectroscopy to show distinct time-domain signatures of correlated insulators at fillings of one (v = -1) and two (v = -2) holes per moiré unit cell in the angle-aligned WSe2/WS2 system. Following photo-doping, we find that the disordering time of the v = -1 state is independent of excitation density (n_ex), as expected from the characteristic phonon response time associated with a polaronic state. In contrast, the disordering time of the v = -2 state scales with (n_ex)^-0.5, in agreement with plasmonic screening from free holons and doublons. These states display disparate reordering behavior dominated either by first order (v = -1) or second order (v = -2) recombination, suggesting the presence of Hubbard excitons and free carrier-like holons/doublons, respectively. Our work delineates the roles of electron-phonon (e-ph) versus electron-electron (e-e) interactions in correlated insulators on the moiré landscape and establishes non-equilibrium responses as mechanistic signatures for distinguishing and discovering quantum phases.
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Submitted 21 June, 2024;
originally announced June 2024.
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Electrical switching of chirality in rhombohedral graphene Chern insulators
Authors:
Jing Ding,
Hanxiao Xiang,
Jiannan Hua,
Wenqiang Zhou,
Naitian Liu,
Le Zhang,
Na Xin,
Kenji Watanabe,
Takashi Taniguchi,
Wei Zhu,
Shuigang Xu
Abstract:
A Chern insulator hosts topologically protected chiral edge currents with quantized conductance characterized by its Chern number. Switching the chirality of the Chern insulator, namely, the direction of the edge current, is highly challenging due to topologically forbidden backscattering but is of considerable importance for the design of topological devices. Nevertheless, this can be achieved by…
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A Chern insulator hosts topologically protected chiral edge currents with quantized conductance characterized by its Chern number. Switching the chirality of the Chern insulator, namely, the direction of the edge current, is highly challenging due to topologically forbidden backscattering but is of considerable importance for the design of topological devices. Nevertheless, this can be achieved by reversing the sign of the Chern number through a topological phase transition. Here, we report electrically switchable chirality in rhombohedral heptalayer graphene-based Chern insulators. The surface flat band and giant Berry curvature in rhombohedral multilayer graphene provide a highly tunable platform for engineering the topological states. By introducing moire superlattices in rhombohedral heptalayer graphene, we observed a cascade of topological phase transitions at quarter electron filling of a moire band. The Chern number can be continuously tuned from 0, -1, 1 to 2 by electric fields, manifesting as a large anomalous Hall effect and following Streda's formula. Sign reversal and the anomalous Hall effect also occurred at non-integer fillings, suggesting the possibility of electrically tunable topological phase transitions within the regime of fractional Chern insulators. Our work establishes rhombohedral heptalayer graphene moire superlattices as a versatile platform for topological engineering. The realization of switchable chirality enhances the potential application of chiral edge currents in topological circuit interconnects.
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Submitted 20 June, 2024;
originally announced June 2024.
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Observation of Electronic Viscous Dissipation in Graphene Magneto-thermal Transport
Authors:
Artem Talanov,
Jonah Waissman,
Aaron Hui,
Brian Skinner,
Kenji Watanabe,
Takashi Taniguchi,
Philip Kim
Abstract:
Hydrodynamic transport effectively describes the collective dynamics of fluids with well-defined thermodynamic quantities. With enhanced electron-electron interactions at elevated temperatures, the collective behavior of electrons in graphene with minimal impurities can be depicted as a hydrodynamic flow of charges. In this new regime, the well-known rules of Ohmic transport based on a single elec…
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Hydrodynamic transport effectively describes the collective dynamics of fluids with well-defined thermodynamic quantities. With enhanced electron-electron interactions at elevated temperatures, the collective behavior of electrons in graphene with minimal impurities can be depicted as a hydrodynamic flow of charges. In this new regime, the well-known rules of Ohmic transport based on a single electron picture no longer apply, necessitating the consideration of collective electron dynamics. In particular, the hydrodynamic analogues of Joule heating and thermal transport require consideration of the viscous motion of the electron fluid, which has a direct impact on energy dissipation and heat generation by the fluidic motion of charge. In this work, we probe graphene hydrodynamics with thermal transport and find two distinct, qualitative signatures: thermal conductivity suppression below the Wiedemann-Franz value and viscous heating leading to magnetically-induced redistribution of temperature. We find these two effects are coincident in temperature and density, providing robust qualitative signatures of hydrodynamics, despite arising from two distinct aspects of this new regime: microscopic momentum conservation due to electron-electron scattering, and geometry-dependent viscous dissipation. Our results mark the first observation of viscous electronic heating in an electron fluid, providing insight for thermal management in electronic hydrodynamic devices and offering a new methodology for identifying hydrodynamic states in other systems.
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Submitted 23 June, 2024; v1 submitted 19 June, 2024;
originally announced June 2024.
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Superfluid stiffness of twisted multilayer graphene superconductors
Authors:
Abhishek Banerjee,
Zeyu Hao,
Mary Kreidel,
Patrick Ledwith,
Isabelle Phinney,
Jeong Min Park,
Andrew M. Zimmerman,
Kenji Watanabe,
Takashi Taniguchi,
Robert M Westervelt,
Pablo Jarillo-Herrero,
Pavel A. Volkov,
Ashvin Vishwanath,
Kin Chung Fong,
Philip Kim
Abstract:
The robustness of the macroscopic quantum nature of a superconductor can be characterized by the superfluid stiffness, $ρ_s$, a quantity that describes the energy required to vary the phase of the macroscopic quantum wave function. In unconventional superconductors, such as cuprates, the low-temperature behavior of $ρ_s$ drastically differs from that of conventional superconductors due to quasipar…
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The robustness of the macroscopic quantum nature of a superconductor can be characterized by the superfluid stiffness, $ρ_s$, a quantity that describes the energy required to vary the phase of the macroscopic quantum wave function. In unconventional superconductors, such as cuprates, the low-temperature behavior of $ρ_s$ drastically differs from that of conventional superconductors due to quasiparticle excitations from gapless points (nodes) in momentum space. Intensive research on the recently discovered magic-angle twisted graphene family has revealed, in addition to superconducting states, strongly correlated electronic states associated with spontaneously broken symmetries, inviting the study of $ρ_s$ to uncover the potentially unconventional nature of its superconductivity. Here we report the measurement of $ρ_s$ in magic-angle twisted trilayer graphene (TTG), revealing unconventional nodal-gap superconductivity. Utilizing radio-frequency reflectometry techniques to measure the kinetic inductive response of superconducting TTG coupled to a microwave resonator, we find a linear temperature dependence of $ρ_s$ at low temperatures and nonlinear Meissner effects in the current bias dependence, both indicating nodal structures in the superconducting order parameter. Furthermore, the doping dependence shows a linear correlation between the zero temperature $ρ_s$ and the superconducting transition temperature $T_c$, reminiscent of Uemura's relation in cuprates, suggesting phase-coherence-limited superconductivity. Our results provide strong evidence for nodal superconductivity in TTG and put strong constraints on the mechanisms of these graphene-based superconductors.
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Submitted 19 June, 2024;
originally announced June 2024.