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Contrasting Irradiation Behavior of Dual Phases in Ti-6Al-4V Alloy at Low-Temperature Due to Omega-phase Precursors in Beta-phase Matrix
Authors:
Taku Ishida,
Sho Kano,
Eiichi Wakai,
Tamaki Shibayama,
Shunsuke Makimura,
Hiroaki Abe
Abstract:
Aiming to simulate the radiation damage effect on a dual alpha+beta phase Ti-6Al-4V alloy utilized as high-intensity accelerator beam window material, a series of irradiation experiments were conducted with a 2.8 MeV-Fe^2+ ion beam in several dpa regions at room temperature. The nano-indentation hardness increased steeply at 1 dpa and unchanged up to 10 dpa, due to the saturation of defect cluster…
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Aiming to simulate the radiation damage effect on a dual alpha+beta phase Ti-6Al-4V alloy utilized as high-intensity accelerator beam window material, a series of irradiation experiments were conducted with a 2.8 MeV-Fe^2+ ion beam in several dpa regions at room temperature. The nano-indentation hardness increased steeply at 1 dpa and unchanged up to 10 dpa, due to the saturation of defect clusters and tangled dislocations in the dominant alpha-phase matrix with a size of 2~3 nm and a density of about 1x10^23 m^-3. In contrast in the intergranular beta-phase, larger loops of 20~30 nm diameter were observed with much less density of about 5x10^20 m^-3. The diffraction pattern showed rectilinear diffuse streaks between the beta-phase reflections, corresponding to the omega-phase precursor, without dose dependency in its intensity. FFT/I-FFT analysis of the HREM revealed a sub-nanometer-sized lattice disorder with local fluctuations, not discrete but continuous, and homogeneously distributed within the matrix beta-phase stably against the irradiation. The significantly low dislocation density and the absence of phase transformation in the beta-phase matrix could be attributed either to the strong sink effect expected for this distinctive sub-nanometer-sized homogeneous lattice disorder or to the anomalous point defect recombination induced by the high mobility of vacancies, both of which are originated from the metastable omega-phase precursors specifically formed in the beta(BCC) phase of group-4 transition metals.
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Submitted 1 May, 2024;
originally announced May 2024.
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Optimisation of electron irradiation for creating spin ensembles in hexagonal boron nitride
Authors:
Alexander J Healey,
Priya Singh,
Islay O Robertson,
Christopher Gavin,
Sam C Scholten,
David A Broadway,
Philipp Reineck,
Hiroshi Abe,
Takeshi Ohshima,
Mehran Kianinia,
Igor Aharonovich,
Jean-Philippe Tetienne
Abstract:
Boron vacancy centre ($V_{\rm B}^-$) ensembles in hexagonal boron nitride (hBN) have attracted recent interest for their potential as two-dimensional solid-state quantum sensors. Irradiation is necessary for $V_{\rm B}^-$ creation, however, to date only limited attention has been given to optimising the defect production process, especially in the case of bulk irradiation with high-energy particle…
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Boron vacancy centre ($V_{\rm B}^-$) ensembles in hexagonal boron nitride (hBN) have attracted recent interest for their potential as two-dimensional solid-state quantum sensors. Irradiation is necessary for $V_{\rm B}^-$ creation, however, to date only limited attention has been given to optimising the defect production process, especially in the case of bulk irradiation with high-energy particles, which offers scalability through the potential for creating ensembles in large volumes of material. Here we systematically investigate the effect of electron irradiation by varying the dose delivered to a range of hBN samples, which differ in their purity, and search for an optimum in measurement sensitivity. We find that moderate electron irradiation doses ($\approx 5\times 10^{18}$~cm$^{-2}$) appear to offer the best sensitivity, and also observe a dependence on the initial crystal purity. These results pave the way for the scalable and cost-effective production of hBN quantum sensors, and provide insight into the mechanisms limiting $V_{\rm B}^-$ spin properties.
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Submitted 22 April, 2024;
originally announced April 2024.
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Multi-species optically addressable spin defects in a van der Waals material
Authors:
Sam C. Scholten,
Priya Singh,
Alexander J. Healey,
Islay O. Robertson,
Galya Haim,
Cheng Tan,
David A. Broadway,
Lan Wang,
Hiroshi Abe,
Takeshi Ohshima,
Mehran Kianinia,
Philipp Reineck,
Igor Aharonovich,
Jean-Philippe Tetienne
Abstract:
Optically addressable spin defects hosted in two-dimensional van der Waals materials represent a new frontier for quantum technologies, promising to lead to a new class of ultrathin quantum sensors and simulators. Recently, hexagonal boron nitride (hBN) has been shown to host several types of optically addressable spin defects, thus offering a unique opportunity to simultaneously address and utili…
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Optically addressable spin defects hosted in two-dimensional van der Waals materials represent a new frontier for quantum technologies, promising to lead to a new class of ultrathin quantum sensors and simulators. Recently, hexagonal boron nitride (hBN) has been shown to host several types of optically addressable spin defects, thus offering a unique opportunity to simultaneously address and utilise various spin species in a single material. Here we demonstrate an interplay between two separate spin species within a single hBN crystal, namely $S=1$ boron vacancy defects and visible emitter spins. We unambiguously prove that the visible emitters are $S=\frac{1}{2}$ spins and further demonstrate room temperature coherent control and optical readout of both spin species. Importantly, by tuning the two spin species into resonance with each other, we observe cross-relaxation indicating strong inter-species dipolar coupling. We then demonstrate magnetic imaging using the $S=\frac{1}{2}$ defects, both under ambient and cryogenic conditions, and leverage their lack of intrinsic quantization axis to determine the anisotropic magnetic susceptibility of a test sample. Our results establish hBN as a versatile platform for quantum technologies in a van der Waals host at room temperature.
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Submitted 25 June, 2024; v1 submitted 28 June, 2023;
originally announced June 2023.
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Detection of paramagnetic spins with an ultrathin van der Waals quantum sensor
Authors:
Islay O. Robertson,
Sam C. Scholten,
Priya Singh,
Alexander J. Healey,
Fernando Meneses,
Philipp Reineck,
Hiroshi Abe,
Takeshi Ohshima,
Mehran Kianinia,
Igor Aharonovich,
Jean-Philippe Tetienne
Abstract:
Detecting magnetic noise from small quantities of paramagnetic spins is a powerful capability for chemical, biochemical, and medical analysis. Quantum sensors based on optically addressable spin defects in bulk semiconductors are typically employed for such purposes, but the 3D crystal structure of the sensor inhibits the sensitivity by limiting the proximity of the defects to the target spins. He…
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Detecting magnetic noise from small quantities of paramagnetic spins is a powerful capability for chemical, biochemical, and medical analysis. Quantum sensors based on optically addressable spin defects in bulk semiconductors are typically employed for such purposes, but the 3D crystal structure of the sensor inhibits the sensitivity by limiting the proximity of the defects to the target spins. Here we demonstrate the detection of paramagnetic spins using spin defects hosted in hexagonal boron nitride (hBN), a van der Waals material which can be exfoliated into the 2D regime. We first create negatively charged boron vacancy (V$_{\rm B}^-$) defects in a powder of ultrathin hBN nanoflakes ($<10$~atomic monolayers thick on average) and measure the longitudinal spin relaxation time ($T_1$) of this system. We then decorate the dry hBN nanopowder with paramagnetic Gd$^{3+}$ ions and observe a clear $T_1$ quenching, under ambient conditions, consistent with the added magnetic noise. Finally, we demonstrate the possibility of performing spin measurements including $T_1$ relaxometry using solution-suspended hBN nanopowder. Our results highlight the potential and versatility of the hBN quantum sensor for a range of sensing applications, and pave the way towards the realisation of a truly 2D, ultrasensitive quantum sensor.
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Submitted 21 February, 2023;
originally announced February 2023.
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Proximal nitrogen reduces the fluorescence quantum yield of nitrogen-vacancy centres in diamond
Authors:
Marco Capelli,
Lukas Lindner,
Tingpeng Luo,
Jan Jeske,
Hiroshi Abe,
Shinobu Onoda,
Takeshi Ohshima,
Brett Johnson,
David A. Simpson,
Alastair Stacey,
Philipp Reineck,
Brant C. Gibson,
Andrew D. Greentree
Abstract:
The nitrogen-vacancy colour centre in diamond is emerging as one of the most important solid-state quantum systems. It has applications to fields including high-precision sensing, quantum computing, single photon communication, metrology, nanoscale magnetic imaging and biosensing. For all of these applications, a high quantum yield of emitted photons is desirable. However, diamond samples engineer…
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The nitrogen-vacancy colour centre in diamond is emerging as one of the most important solid-state quantum systems. It has applications to fields including high-precision sensing, quantum computing, single photon communication, metrology, nanoscale magnetic imaging and biosensing. For all of these applications, a high quantum yield of emitted photons is desirable. However, diamond samples engineered to have high densities of nitrogen-vacancy centres show levels of brightness varying significantly within single batches, or even within the same sample. Here we show that nearby nitrogen impurities quench emission of nitrogen-vacancy centres via non-radiative transitions, resulting in a reduced fluorescence quantum yield. We monitored the emission properties of nitrogen-vacancy centre ensembles from synthetic diamond samples with different concentrations of nitrogen impurities. While at low nitrogen densities of 1.81 ppm we measured a lifetime of 13.9 ns, we observed a strong reduction in lifetime with increasing nitrogen density. We measure a lifetime as low as 4.4 ns at a nitrogen density of 380 ppm. The change in lifetime matches a reduction in relative fluorescence quantum yield from 77.4 % to 32 % with an increase in nitrogen density from 88 ppm to 380 ppm, respectively. These results will inform the conditions required to optimise the properties of diamond crystals devices based on the fluorescence of nitrogen-vacancy centres. Furthermore, this work provides insights into the origin of inhomogeneities observed in high-density nitrogen-vacancy ensembles within diamonds and nanodiamonds.
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Submitted 14 December, 2021;
originally announced December 2021.
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Five-second coherence of a single spin with single-shot readout in silicon carbide
Authors:
Christopher P. Anderson,
Elena O. Glen,
Cyrus Zeledon,
Alexandre Bourassa,
Yu Jin,
Yizhi Zhu,
Christian Vorwerk,
Alexander L. Crook,
Hiroshi Abe,
Jawad Ul-Hassan,
Takeshi Ohshima,
Nguyen T. Son,
Giulia Galli,
David D. Awschalom
Abstract:
An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout - a deterministic measurement of the quantum state. Here, we demonstrate single-shot readout of single defects in SiC via spin-to-charge conversion, whereby the defect's spin state is mapped onto a long-lived charge state. With this technique, we achieve over 80% readout fidelity without pre- or post-selec…
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An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout - a deterministic measurement of the quantum state. Here, we demonstrate single-shot readout of single defects in SiC via spin-to-charge conversion, whereby the defect's spin state is mapped onto a long-lived charge state. With this technique, we achieve over 80% readout fidelity without pre- or post-selection, resulting in a high signal-to-noise ratio (SNR) that enables us to measure long spin coherence times. Combined with pulsed dynamical decoupling sequences in an isotopically purified host material, we report single spin T2 > 5s, over two orders of magnitude greater than previously reported in this system. The mapping of these coherent spin states onto single charges unlocks both single-shot readout for scalable quantum nodes and opportunities for electrical readout via integration with semiconductor devices.
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Submitted 5 October, 2021; v1 submitted 4 October, 2021;
originally announced October 2021.
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Ultrafast demagnetization in NiCo2O4 thin films probed by time-resolved microscopy
Authors:
Ryunosuke Takahashi,
Yoshiki Tani,
Hirotaka Abe,
Minato Yamasaki,
Ikumi Suzuki,
Daisuke Kan,
Yuichi Shimakawa,
Hiroki Wadati
Abstract:
Using a time-resolved magneto-optical Kerr effect (TR-MOKE) microscope, we observed ultrafast demagnetization of inverse-spinel-type NiCo2O4 (NCO) epitaxial thin films of the inverse spinel type ferrimagnet NCO with perpendicular magnetic anisotropy. This microscope uses a pump-probe method, where the sample is pumped at 1030 nm, and magnetic domain images are acquired via MOKE microscopy at 515 n…
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Using a time-resolved magneto-optical Kerr effect (TR-MOKE) microscope, we observed ultrafast demagnetization of inverse-spinel-type NiCo2O4 (NCO) epitaxial thin films of the inverse spinel type ferrimagnet NCO with perpendicular magnetic anisotropy. This microscope uses a pump-probe method, where the sample is pumped at 1030 nm, and magnetic domain images are acquired via MOKE microscopy at 515 nm (the second harmonic). We successfully observed the dynamics of the magnetic domain of the NCO thin film via laser irradiation, and obtained a demagnetization time constant of approximately 0.4 ps. This time constant was significantly smaller than the large time constants reported for other half-metallic oxides. These results, combined with the results of our x-ray photoemission spectroscopy study, indicate that this NCO thin film is a ferrimagnetic metal whose electronic structure deviates from the theoretically predicted half-metallic one.
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Submitted 2 June, 2021; v1 submitted 2 June, 2021;
originally announced June 2021.
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Nature of low-temperature dense ice up to 80 GPa observed by x-ray diffraction
Authors:
Hiroshi Fukui,
Hirokazu Kadobayashi,
Hirotaka Abe,
Ryunosuke Takahashi,
Hiroki Wadati,
Naohisa Hirao
Abstract:
We have measured the lattice volume of ice VIII in different pressure-temperature pathways and found isothermal compression at low-temperature conditions makes the volume larger. Ice VIII has become its high-pressure phase with the molar volume of 6.45 cm^3 at 10 K where the pressure can be estimated as 60.4 GPa based on the third-order Birch-Murnaghan equation with parameters determined in this s…
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We have measured the lattice volume of ice VIII in different pressure-temperature pathways and found isothermal compression at low-temperature conditions makes the volume larger. Ice VIII has become its high-pressure phase with the molar volume of 6.45 cm^3 at 10 K where the pressure can be estimated as 60.4 GPa based on the third-order Birch-Murnaghan equation with parameters determined in this study (K_0= 32.4 GPa, K'_0= 3.7, and V_0= 11.9 cm^3). The present results indicate that this high-pressure state is paraelectric with tetragonal symmetry.
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Submitted 22 April, 2021;
originally announced April 2021.
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Cluster glass transition and relaxation in random spinel CoGa2O4
Authors:
T. Naka,
T. Nakane,
S. Ishii,
M. Nakayama,
A. Ohmura,
F. Ishikawa,
A. de Visser,
H. Abe,
T. Uchikoshi
Abstract:
We report magnetic properties in the random spinel magnet CoGa2O4. Rietveld analysis of the x-ray diffraction profile for CoGa2O4 reveals that the Co and Ga ions are distributed randomly in the tetrahedral A-sites and octahedral B-sites in the cubic spinel structure. CoGa2O4 exhibits a spin-glass transition at TSG = 8.2 K that is confirmed by measurements of the dc- and ac-susceptibilities and the…
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We report magnetic properties in the random spinel magnet CoGa2O4. Rietveld analysis of the x-ray diffraction profile for CoGa2O4 reveals that the Co and Ga ions are distributed randomly in the tetrahedral A-sites and octahedral B-sites in the cubic spinel structure. CoGa2O4 exhibits a spin-glass transition at TSG = 8.2 K that is confirmed by measurements of the dc- and ac-susceptibilities and thermoremanent magnetization (TRM) that develops below TSG. From the frequency dependence of the freezing temperature Tf for CoGa2O4, it is indicated that the relaxation time follows a Vogel-Fulcher law. Magnetic entropy is considerably reduced, probably because magnetic cluster formation developed even at T > TSG. The relaxation rate of TRM is considerably enhanced at TSG and decays rapidly above and below TSG. The time course of TRM is reproduced by non-exponential relaxation forms, such as a stretched exponential (Kohlrausch) as well as Ogielski and Weron relaxation forms. This behavior is displayed universally in glass systems, and the characteristic parameters associated with these functions were reasonable.
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Submitted 28 May, 2021; v1 submitted 25 October, 2020;
originally announced October 2020.
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Elastoresistance measurements on CaKFe$_4$As$_4$ and KCa$_2$Fe$_4$As$_4$F$_2$ with the Fe site of $C_{2v}$ symmetry
Authors:
Taichi Terashima,
Yoshitaka Matsushita,
Hiroyuki Yamase,
Naoki Kikugawa,
Hideki Abe,
Motoharu Imai,
Shinya Uji,
Shigeyuki Ishida,
Hiroshi Eisaki,
Akira Iyo,
Kunihiro Kihou,
Chul-Ho Lee,
Teng Wang,
Gang Mu
Abstract:
We report resistance and elastoresistance measurements on (Ba$_{0.5}$K$_{0.5}$)Fe$_2$As$_2$, CaKFe$_4$As$_4$, and KCa$_2$Fe$_4$As$_4$F$_2$. The Fe-site symmetry is $D_{2d}$ in the first compound but $C_{2v}$ in the latter two, which lifts the degeneracy of the Fe $d_{xz}$ and $d_{yz}$ orbitals. The temperature dependence of the resistance and elastoresistance is similar between the three compounds…
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We report resistance and elastoresistance measurements on (Ba$_{0.5}$K$_{0.5}$)Fe$_2$As$_2$, CaKFe$_4$As$_4$, and KCa$_2$Fe$_4$As$_4$F$_2$. The Fe-site symmetry is $D_{2d}$ in the first compound but $C_{2v}$ in the latter two, which lifts the degeneracy of the Fe $d_{xz}$ and $d_{yz}$ orbitals. The temperature dependence of the resistance and elastoresistance is similar between the three compounds. Especially, the [110] elastoresistance is enhanced with decreasing temperature irrespective of the Fe-site symmetry. This appears to be in conflict with recent Raman scattering studies on CaKFe$_4$As$_4$, which suggest the absence of nematic fluctuations. We consider possible ways of reconciliation and suggest that the present result is important in elucidating the origin of in-plane resistivity anisotropy in iron-based superconductors.
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Submitted 23 August, 2020; v1 submitted 4 June, 2020;
originally announced June 2020.
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Entanglement and control of single quantum memories in isotopically engineered silicon carbide
Authors:
Alexandre Bourassa,
Christopher P. Anderson,
Kevin C. Miao,
Mykyta Onizhuk,
He Ma,
Alexander L. Crook,
Hiroshi Abe,
Jawad Ul-Hassan,
Takeshi Ohshima,
Nguyen T. Son,
Giulia Galli,
David D. Awschalom
Abstract:
Nuclear spins in the solid state are both a cause of decoherence and a valuable resource for spin qubits. In this work, we demonstrate control of isolated 29Si nuclear spins in silicon carbide (SiC) to create an entangled state between an optically active divacancy spin and a strongly coupled nuclear register. We then show how isotopic engineering of SiC unlocks control of single weakly coupled nu…
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Nuclear spins in the solid state are both a cause of decoherence and a valuable resource for spin qubits. In this work, we demonstrate control of isolated 29Si nuclear spins in silicon carbide (SiC) to create an entangled state between an optically active divacancy spin and a strongly coupled nuclear register. We then show how isotopic engineering of SiC unlocks control of single weakly coupled nuclear spins and present an ab initio method to predict the optimal isotopic fraction which maximizes the number of usable nuclear memories. We bolster these results by reporting high-fidelity electron spin control (F=99.984(1)%), alongside extended coherence times (T2=2.3 ms, T2DD>14.5 ms), and a >40 fold increase in dephasing time (T2*) from isotopic purification. Overall, this work underlines the importance of controlling the nuclear environment in solid-state systems and provides milestone demonstrations that link single photon emitters with nuclear memories in an industrially scalable material.
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Submitted 15 May, 2020;
originally announced May 2020.
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Universal coherence protection in a solid-state spin qubit
Authors:
Kevin C. Miao,
Joseph P. Blanton,
Christopher P. Anderson,
Alexandre Bourassa,
Alexander L. Crook,
Gary Wolfowicz,
Hiroshi Abe,
Takeshi Ohshima,
David D. Awschalom
Abstract:
Decoherence largely limits the physical realization of qubits and its mitigation is critical to quantum science. Here, we construct a robust qubit embedded in a decoherence-protected subspace, obtained by hybridizing an applied microwave drive with the ground-state electron spin of a silicon carbide divacancy defect. The qubit is protected from magnetic, electric, and temperature fluctuations, whi…
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Decoherence largely limits the physical realization of qubits and its mitigation is critical to quantum science. Here, we construct a robust qubit embedded in a decoherence-protected subspace, obtained by hybridizing an applied microwave drive with the ground-state electron spin of a silicon carbide divacancy defect. The qubit is protected from magnetic, electric, and temperature fluctuations, which account for nearly all relevant decoherence channels in the solid state. This culminates in an increase of the qubit's inhomogeneous dephasing time by over four orders of magnitude (to > 22 milliseconds), while its Hahn-echo coherence time approaches 64 milliseconds. Requiring few key platform-independent components, this result suggests that substantial coherence improvements can be achieved in a wide selection of quantum architectures.
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Submitted 12 May, 2020;
originally announced May 2020.
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Purcell enhancement of a single silicon carbide color center with coherent spin control
Authors:
A. L. Crook,
C. P. Anderson,
K. C. Miao,
A. Bourassa,
H. Lee,
S. L. Bayliss,
D. O. Bracher,
X. Zhang,
H. Abe,
T. Ohshima,
E. L. Hu,
D. D. Awschalom
Abstract:
Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addressable spin-1 ground state and near-infrared optical emission. Here, we present the Purcell enhancement of a single neutral divacancy coupled to a photonic crystal cavity. We utilize a combination of nanolithographic te…
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Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addressable spin-1 ground state and near-infrared optical emission. Here, we present the Purcell enhancement of a single neutral divacancy coupled to a photonic crystal cavity. We utilize a combination of nanolithographic techniques and a dopant-selective photoelectrochemical etch to produce suspended cavities with quality factors exceeding 5,000. Subsequent coupling to a single divacancy leads to a Purcell factor of ~50, which manifests as increased photoluminescence into the zero-phonon line and a shortened excited-state lifetime. Additionally, we measure coherent control of the divacancy ground state spin inside the cavity nanostructure and demonstrate extended coherence through dynamical decoupling. This spin-cavity system represents an advance towards scalable long-distance entanglement protocols using silicon carbide that require the interference of indistinguishable photons from spatially separated single qubits.
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Submitted 28 February, 2020;
originally announced March 2020.
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Amplification by stimulated emission of nitrogen vacancy centres in a diamond-loaded fibre cavity
Authors:
Sarath Raman Nair,
Lachlan J. Rogers,
Xavier Vidal,
Reece P. Roberts,
Hiroshi Abe,
Takeshi Ohshima,
Takashi Yatsui,
Andrew D. Greentree,
Jan Jeske,
Thomas Volz
Abstract:
Laser-threshold magetometry using the negatively charged nitrogen-vacancy (NV-) centre in diamond as a gain medium has been proposed as a technique to dramatically enhance the sensitivity of room-temperature magnetometry. We experimentally explore a diamond-loaded open tunable fibre-cavity system as a potential contender for the realization of lasing with NV- centres. We observe amplification of t…
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Laser-threshold magetometry using the negatively charged nitrogen-vacancy (NV-) centre in diamond as a gain medium has been proposed as a technique to dramatically enhance the sensitivity of room-temperature magnetometry. We experimentally explore a diamond-loaded open tunable fibre-cavity system as a potential contender for the realization of lasing with NV- centres. We observe amplification of the transmission of a cavity-resonant seed laser at 721 nm when the cavity is pumped at 532 nm, and attribute this to stimulated emission. Changes in the intensity of spontaneously emitted photons accompany the amplification, and a qualitative model including stimulated emission and ionisation dynamics of the NV- centre captures the dynamics in the experiment very well. These results highlight important considerations in the realization of an NV- laser in diamond.
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Submitted 24 May, 2020; v1 submitted 12 December, 2019;
originally announced December 2019.
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Unique defect structure and advantageous vortex pinning properties in superconducting CaKFe4As4
Authors:
Shigeyuki Ishida,
Akira Iyo,
Hiraku Ogino,
Hiroshi Eisaki,
Nao Takeshita,
Kenji Kawashima,
Keiichi Yanagisawa,
Yuuga Kobayashi,
Koji Kimoto,
Hideki Abe,
Motoharu Imai,
Jun-ichi Shimoyama,
Michael Eisterer
Abstract:
The lossless current-carrying capacity of a superconductor is limited by its critical current density (Jc). A key to enhance Jc towards real-life applications is engineering defect structures to optimize the pinning landscape. For iron-based superconductors (IBSs) considered as candidate materials for high-field applications, high Jc values have been achieved by various techniques to introduce art…
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The lossless current-carrying capacity of a superconductor is limited by its critical current density (Jc). A key to enhance Jc towards real-life applications is engineering defect structures to optimize the pinning landscape. For iron-based superconductors (IBSs) considered as candidate materials for high-field applications, high Jc values have been achieved by various techniques to introduce artificial pinning centres. Here we report extraordinary vortex pinning properties in CaKFe4As4 (CaK1144) arising from the inherent defect structure. Scanning transmission electron microscopy revealed the existence of nanoscale intergrowths of the CaFe2As2 phase, which is unique to CaK1144 formed as a line compound. The Jc properties in CaK1144 are found to be distinct from other IBSs characterized by a significant anisotropy with respect to the magnetic field orientation as well as a remarkable pinning mechanism significantly enhanced with increasing temperature. We propose a comprehensive explanation of the Jc properties based on the unique intergrowths acting as pinning centres.
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Submitted 10 July, 2019;
originally announced July 2019.
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Electrical and optical control of single spins integrated in scalable semiconductor devices
Authors:
Christopher P. Anderson,
Alexandre Bourassa,
Kevin C. Miao,
Gary Wolfowicz,
Peter J. Mintun,
Alexander L. Crook,
Hiroshi Abe,
Jawad Ul Hassan,
Nguyen T. Son,
Takeshi Ohshima,
David D. Awschalom
Abstract:
Spin defects in silicon carbide have exceptional electron spin coherence with a near-infrared spin-photon interface in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we successfully integrate highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricate diodes to modulate the local electrical environment of the defect…
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Spin defects in silicon carbide have exceptional electron spin coherence with a near-infrared spin-photon interface in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we successfully integrate highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricate diodes to modulate the local electrical environment of the defects. These devices enable deterministic charge state control and broad Stark shift tuning exceeding 850 GHz. Surprisingly, we show that charge depletion results in a narrowing of the optical linewidths by over 50 fold, approaching the lifetime limit. These results demonstrate a method for mitigating the ubiquitous problem of spectral diffusion in solid-state emitters by engineering the electrical environment while utilizing classical semiconductor devices to control scalable spin-based quantum systems.
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Submitted 19 June, 2019;
originally announced June 2019.
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Electrically driven optical interferometry with spins in silicon carbide
Authors:
Kevin C. Miao,
Alexandre Bourassa,
Christopher P. Anderson,
Samuel J. Whiteley,
Alexander L. Crook,
Sam L. Bayliss,
Gary Wolfowicz,
Gergo Thiering,
Peter Udvarhelyi,
Viktor Ivady,
Hiroshi Abe,
Takeshi Ohshima,
Adam Gali,
David D. Awschalom
Abstract:
Interfacing solid-state defect electron spins to other quantum systems is an ongoing challenge. The ground-state spin's weak coupling to its environment bestows excellent coherence properties, but also limits desired drive fields. The excited-state orbitals of these electrons, however, can exhibit stronger coupling to phononic and electric fields. Here, we demonstrate electrically driven coherent…
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Interfacing solid-state defect electron spins to other quantum systems is an ongoing challenge. The ground-state spin's weak coupling to its environment bestows excellent coherence properties, but also limits desired drive fields. The excited-state orbitals of these electrons, however, can exhibit stronger coupling to phononic and electric fields. Here, we demonstrate electrically driven coherent quantum interference in the optical transition of single, basally oriented divacancies in commercially available 4H silicon carbide. By applying microwave frequency electric fields, we coherently drive the divacancy's excited-state orbitals and induce Landau-Zener-Stuckelberg interference fringes in the resonant optical absorption spectrum. Additionally, we find remarkably coherent optical and spin subsystems enabled by the basal divacancy's symmetry. These properties establish divacancies as strong candidates for quantum communication and hybrid system applications, where simultaneous control over optical and spin degrees of freedom is paramount.
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Submitted 29 May, 2019;
originally announced May 2019.
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Large and significantly anisotropic critical current density induced by planar defects in CaKFe4As4 single crystals
Authors:
Sunseng Pyon,
Ayumu Takahashi,
Ivan Veshchunov,
Tsuyoshi Tamegai,
Shigeyuki Ishida,
Akira Iyo,
Hiroshi Eisaki,
Motoharu Imai,
Hideki Abe,
Taichi Terashima,
Ataru Ichinose
Abstract:
Three independent components of critical current density, one for the H//c axis and the other two for the H//ab plane, have been studied in CaKFe4As4 single crystals. When the magnetic field is applied along the c axis, we observed fish-tail-like peaks in the M-H hysteresis loop, and the magnetization at higher temperatures exceeds that at lower temperatures at high fields. When the field is appli…
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Three independent components of critical current density, one for the H//c axis and the other two for the H//ab plane, have been studied in CaKFe4As4 single crystals. When the magnetic field is applied along the c axis, we observed fish-tail-like peaks in the M-H hysteresis loop, and the magnetization at higher temperatures exceeds that at lower temperatures at high fields. When the field is applied parallel to the ab plane, a dip structure is observed in the M-H hysteresis loop near the self-field. In addition, for the H//ab plane, we succeeded in separately evaluating the large and significantly anisotropic in-plane and out-of-plane Jc. Transmission electron microscopy revealed the presence of planar defects parallel to the ab plane in CaKFe4As4, which have not been observed in any other iron-based superconductors. We discuss the possible relationship between the anomalous Jc behavior and the planar defects.
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Submitted 5 March, 2019; v1 submitted 3 March, 2019;
originally announced March 2019.
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NV- - N+ pair centre in 1b diamond
Authors:
Neil B. Manson,
Morgan Hedges,
Michael S,
J. Barson,
Rose Ahlefeldt,
Marcus W. Doherty,
Matthew J. Sellars,
Hiroshi Abe,
Takeshi Ohshima
Abstract:
The study establishes that the degree of optically induced spin polarization that can be achieved for NV$^- $in 1b diamond is limited by the concentration of single substitutional nitrogen, N$^0$ . The polarization of the individual NV centres in the diamond is dependent on the separation of the NV$^-$ and the nitrogen donor. When the NV$^-$ - N$^+$ pair separation is large the properties of the p…
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The study establishes that the degree of optically induced spin polarization that can be achieved for NV$^- $in 1b diamond is limited by the concentration of single substitutional nitrogen, N$^0$ . The polarization of the individual NV centres in the diamond is dependent on the separation of the NV$^-$ and the nitrogen donor. When the NV$^-$ - N$^+$ pair separation is large the properties of the pair will be as for single sites and a high degree of spin polarization attainable. When the separation decreases the emission is reduced, the lifetime shortened and the spin polarization downgraded. The deterioration occurs as a consequence of electron tunneling in the excited state from NV$^-$ to N$^+$ and results in an optical cycle that includes NV$^0$. The tunneling process is linear in optical excitation and more prevalent the closer the N$^+$ is to the NV$^-$ centre. However, the separation between the NV$^-$ and its donor N$^+$ can be effected by light through the excitation of NV$^-$ and/or ionization of N$^0$. The optical excitation that creates the spin polarization can also modify the sample properties and during excitation creates charge dynamics. The consequence is that the magnitude of spin polarization, the spin relaxation and coherence times T$_1$ and T$_2$ have a dependence on the nitrogen concentration and on the excitation wavelength. The adjacent N$^+$ gives an electric field that Stark shifts the NV$^-$ transitions and for an ensemble results in line broadening. It is observation of changes of these Stark induced effects that allow the variation in NV$^-$ - N$^+$ separation to be monitored. Spectroscopic measurements including that of the varying line widths are central to the study. They are made at low temperatures and include extensive measurements of the NV$^-$ optical transition at 637 nm, the infrared transition at 1042 nm and ODMR at 2.87 GHz.
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Submitted 16 October, 2018; v1 submitted 23 July, 2018;
originally announced July 2018.
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Effects of high energy electron irradiation on quantum emitters in hexagonal boron nitride
Authors:
Hanh Ngoc My Duong,
Minh Anh Phan Nguyen,
Mehran Kianinia,
Hiroshi Abe,
Takeshi Ohshima,
Kenji Watanabe,
Takashi Taniguchi,
James H. Edgar,
Igor Aharonovich,
Milos Toth
Abstract:
Hexagonal Boron Nitride (hBN) mono and multilayers are promising hosts for room temperature single photon emitters (SPEs). In this work we explore high energy (~ MeV) electron irradiation as a means to generate stable SPEs in hBN. We investigate four types of exfoliated hBN flakes - namely, high purity multilayers, isotopically pure hBN, carbon rich hBN multilayers and monolayered material - and f…
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Hexagonal Boron Nitride (hBN) mono and multilayers are promising hosts for room temperature single photon emitters (SPEs). In this work we explore high energy (~ MeV) electron irradiation as a means to generate stable SPEs in hBN. We investigate four types of exfoliated hBN flakes - namely, high purity multilayers, isotopically pure hBN, carbon rich hBN multilayers and monolayered material - and find that electron irradiation increases emitter concentrations dramatically in all samples. Furthermore, the engineered emitters are located throughout hBN flakes (not only at flake edges or grain boundaries), and do not require activation by high temperature annealing of the host material after electron exposure. Our results provide important insights into controlled formation of hBN SPEs and may aid in identification of their crystallographic origin.
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Submitted 10 May, 2018;
originally announced May 2018.
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Towards a spin-ensemble quantum memory for superconducting qubits
Authors:
C. Grezes,
Y. Kubo,
B. Julsgaard,
T. Umeda,
J. Isoya,
H. Sumiya,
H. Abe,
S. Onoda,
T. Ohshima,
K. Nakamura,
I. Diniz,
A. Auffeves,
V. Jacques,
J. -F. Roch,
D. Vion,
D. Esteve,
K. Moelmer,
P. Bertet
Abstract:
This article reviews efforts to build a new type of quantum device, which combines an ensemble of electronic spins with long coherence times, and a small-scale superconducting quantum processor. The goal is to store over long times arbitrary qubit states in orthogonal collective modes of the spin-ensemble, and to retrieve them on-demand. We first present the protocol devised for such a multi-mode…
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This article reviews efforts to build a new type of quantum device, which combines an ensemble of electronic spins with long coherence times, and a small-scale superconducting quantum processor. The goal is to store over long times arbitrary qubit states in orthogonal collective modes of the spin-ensemble, and to retrieve them on-demand. We first present the protocol devised for such a multi-mode quantum memory. We then describe a series of experimental results using NV center spins in diamond, which demonstrate its main building blocks: the transfer of arbitrary quantum states from a qubit into the spin ensemble, and the multi-mode retrieval of classical microwave pulses down to the single-photon level with a Hahn-echo like sequence. A reset of the spin memory is implemented in-between two successive sequences using optical repumping of the spins.
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Submitted 22 October, 2015;
originally announced October 2015.
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Single Spin Optically Detected Magnetic Resonance with E-Band Microwave Resonators
Authors:
Nabeel Aslam,
Matthias Pfender,
Rainer Stöhr,
Philipp Neumann,
Marc Scheffler,
Hitoshi Sumiya,
Hiroshi Abe,
Shinobu Onoda,
Takeshi Ohshima,
Junichi Isoya,
Jörg Wrachtrup
Abstract:
Magnetic resonance with ensembles of electron spins is nowadays performed in frequency ranges up to 240 GHz and in corresponding magnetic fields of up to 10 T. However, experiments with single electron and nuclear spins so far only reach into frequency ranges of several 10 GHz, where existing coplanar waveguide structures for microwave (MW) delivery are compatible with single spin readout techniqu…
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Magnetic resonance with ensembles of electron spins is nowadays performed in frequency ranges up to 240 GHz and in corresponding magnetic fields of up to 10 T. However, experiments with single electron and nuclear spins so far only reach into frequency ranges of several 10 GHz, where existing coplanar waveguide structures for microwave (MW) delivery are compatible with single spin readout techniques (e.g. electrical or optical readout). Here, we explore the frequency range up to 90 GHz, respectively magnetic fields of up to $\approx 3\,$T for single spin magnetic resonance in conjunction with optical spin readout. To this end, we develop MW resonators with optical single spin access. In our case, rectangular E-band waveguides guarantee low-loss supply of microwaves to the resonators. Three dimensional cavities, as well as coplanar waveguide resonators enhance MW fields by spatial and spectral confinement with a MW efficiency of $1.36\,\mathrm{mT/\sqrt{W}}$. We utilize single NV centers as hosts for optically accessible spins, and show, that their properties regarding optical spin readout known from smaller fields (<0.65 T) are retained up to fields of 3 T. In addition, we demonstrate coherent control of single nuclear spins under these conditions. Furthermore, our results extend the applicable magnetic field range of a single spin magnetic field sensor. Regarding spin based quantum registers, high fields lead to a purer product basis of electron and nuclear spins, which promises improved spin lifetimes. For example, during continuous single-shot readout the $^{14}$N nuclear spin shows second-long longitudinal relaxation times.
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Submitted 13 March, 2015;
originally announced March 2015.
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Multi-mode storage and retrieval of microwave fields in a spin ensemble
Authors:
C. Grezes,
B. Julsgaard,
Y. Kubo,
M. Stern,
T. Umeda,
J. Isoya,
H. Sumiya,
H. Abe,
S. Onoda,
T. Ohshima,
V. Jacques,
J. Esteve,
D. Vion,
D. Esteve,
K. Mølmer,
P. Bertet
Abstract:
A quantum memory at microwave frequencies, able to store the state of multiple superconducting qubits for long times, is a key element for quantum information processing. Electronic and nuclear spins are natural candidates for the storage medium as their coherence time can be well above one second. Benefiting from these long coherence times requires to apply the refocusing techniques used in magne…
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A quantum memory at microwave frequencies, able to store the state of multiple superconducting qubits for long times, is a key element for quantum information processing. Electronic and nuclear spins are natural candidates for the storage medium as their coherence time can be well above one second. Benefiting from these long coherence times requires to apply the refocusing techniques used in magnetic resonance, a major challenge in the context of hybrid quantum circuits. Here we report the first implementation of such a scheme, using ensembles of nitrogen-vacancy (NV) centres in diamond coupled to a superconducting resonator, in a setup compatible with superconducting qubit technology. We implement the active reset of the NV spins into their ground state by optical pumping and their refocusing by Hahn echo sequences. This enables the storage of multiple microwave pulses at the picoWatt level and their retrieval after up to $35 μ$s, a three orders of magnitude improvement compared to previous experiments.
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Submitted 30 January, 2014;
originally announced January 2014.
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Broadband Excitation by Chirped Pulses: Application to Single Electron Spins in Diamond
Authors:
I. Niemeyer,
J. H. Shim,
J. Zhang,
D. Suter,
T. Taniguchi,
T. Teraji,
H. Abe,
S. Onoda,
T. Yamamoto,
T. Ohshima,
J. Isoya,
F. Jelezko
Abstract:
Pulsed excitation of broad spectra requires very high field strengths if monochromatic pulses are used. If the corresponding high power is not available or not desirable, the pulses can be replaced by suitable low-power pulses that distribute the power over a wider bandwidth. As a simple case, we use microwave pulses with a linear frequency chirp. We use these pulses to excite spectra of single NV…
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Pulsed excitation of broad spectra requires very high field strengths if monochromatic pulses are used. If the corresponding high power is not available or not desirable, the pulses can be replaced by suitable low-power pulses that distribute the power over a wider bandwidth. As a simple case, we use microwave pulses with a linear frequency chirp. We use these pulses to excite spectra of single NV-centers in a Ramsey experiment. Compared to the conventional Ramsey experiment, our approach increases the bandwidth by at least an order of magnitude. Compared to the conventional ODMR experiment, the chirped Ramsey experiment does not suffer from power broadening and increases the resolution by at least an order of magnitude. As an additional benefit, the chirped Ramsey spectrum contains not only `allowed' single quantum transitions, but also `forbidden' zero- and double quantum transitions, which can be distinguished from the single quantum transitions by phase-shifting the readout pulse with respect to the excitation pulse or by variation of the external magnetic field strength.
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Submitted 14 January, 2013;
originally announced January 2013.
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Electron spin resonance detected by a superconducting qubit
Authors:
Y. Kubo,
I. Diniz,
C. Grezes,
T. Umeda,
J. Isoya,
H. Sumiya,
T. Yamamoto,
H. Abe,
S. Onoda,
T. Ohshima,
V. Jacques,
A. Dréau,
J. -F. Roch,
A. Auffeves,
D. Vion,
D. Esteve,
P. Bertet
Abstract:
A new method for detecting the magnetic resonance of electronic spins at low temperature is demonstrated. It consists in measuring the signal emitted by the spins with a superconducting qubit that acts as a single-microwave-photon detector, resulting in an enhanced sensitivity. We implement this new type of electron-spin resonance spectroscopy using a hybrid quantum circuit in which a transmon qub…
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A new method for detecting the magnetic resonance of electronic spins at low temperature is demonstrated. It consists in measuring the signal emitted by the spins with a superconducting qubit that acts as a single-microwave-photon detector, resulting in an enhanced sensitivity. We implement this new type of electron-spin resonance spectroscopy using a hybrid quantum circuit in which a transmon qubit is coupled to a spin ensemble consisting of NV centers in diamond. With this setup we measure the NV center absorption spectrum at 30mK at an excitation level of \thicksim15\,μ_{B} out of an ensemble of 10^{11} spins.
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Submitted 25 May, 2012;
originally announced May 2012.
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Hybrid quantum circuit with a superconducting qubit coupled to a spin ensemble
Authors:
Y. Kubo,
C. Grezes,
A. Dewes,
T. Umeda,
J. Isoya,
H. Sumiya,
N. Morishita,
H. Abe,
S. Onoda,
T. Ohshima,
V. Jacques,
A. Dréau,
J. -F. Roch,
I. Diniz,
A. Auffeves,
D. Vion,
D. Esteve,
P. Bertet
Abstract:
We report the experimental realization of a hybrid quantum circuit combining a superconducting qubit and an ensemble of electronic spins. The qubit, of the transmon type, is coherently coupled to the spin ensemble consisting of nitrogen-vacancy (NV) centers in a diamond crystal via a frequency-tunable superconducting resonator acting as a quantum bus. Using this circuit, we prepare arbitrary super…
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We report the experimental realization of a hybrid quantum circuit combining a superconducting qubit and an ensemble of electronic spins. The qubit, of the transmon type, is coherently coupled to the spin ensemble consisting of nitrogen-vacancy (NV) centers in a diamond crystal via a frequency-tunable superconducting resonator acting as a quantum bus. Using this circuit, we prepare arbitrary superpositions of the qubit states that we store into collective excitations of the spin ensemble and retrieve back later on into the qubit. These results constitute a first proof of concept of spin-ensemble based quantum memory for superconducting qubits.
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Submitted 13 October, 2011;
originally announced October 2011.
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Growth, Annealing Effects on Superconducting and Magnetic Properties and Anisotropy of FeSe_1-x_Te_x_ (0.5 =< x =< 1) Single Crystals
Authors:
Takashi Noji,
Takumi Suzuki,
Haruki Abe,
Tadashi Adachi,
Masatsune Kato,
Yoji Koike
Abstract:
Single crystals of FeSe_1-x_Te_x_ (0.5=<x=<1) have been grown by the Bridgman method. After annealing them at 400 deg for 100 h in vacuum, single crystals of x=0.5-0.9 have exhibited bulk superconductivity. Anisotropic properties of the electrical resistivity and upper critical field, H_c2_, have been investigated for the single-crystal FeSe_1-x_Te_x_ with x=0.6. It has been found that the in-p…
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Single crystals of FeSe_1-x_Te_x_ (0.5=<x=<1) have been grown by the Bridgman method. After annealing them at 400 deg for 100 h in vacuum, single crystals of x=0.5-0.9 have exhibited bulk superconductivity. Anisotropic properties of the electrical resistivity and upper critical field, H_c2_, have been investigated for the single-crystal FeSe_1-x_Te_x_ with x=0.6. It has been found that the in-plane resistivity, Rho_ab_, shows a metallic temperature-dependence, while the out-of-plane resistivity, Rho_c_, shows a broad maximum around 100 K. The resistivity ratio, Rho_ab_/Rho_c_, is 44 and 70 at 290 K and just above the superconducting transition temperature, T_c_, respectively. The anisotropic parameter, gamma= H_c2_^para^/H_c2_^perp^ (The para and perp indicate field directions parallel and perpendicular to the ab-plane, respectively.), is estimated as 2.7 just below T_c_.
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Submitted 7 April, 2010;
originally announced April 2010.
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Highly crystalline superconducting MgB2 nanowires formed by electrodeposition
Authors:
Hideki Abe,
Akihisa Miyazoe,
Keiji Kurashima,
Kiyomi Nakajima,
Takeshi Aoyagi,
Kenji Nishida,
Noriyuki Hirota,
Takashi Kimura,
Yoshimasa Sugimoto,
Tsutomu Ando,
Hitoshi Wada
Abstract:
Superconducting nanowires can be synthesised in high-throughput chemical routes and hold great promise as a low-dissipative material for superconducting devices. The applicability of superconducting nanowires, however, has been limited due to the lack of an adequate method to fit the nanowires into given electronic circuits. One of the biggest obstacles is to connect metal terminals to supercond…
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Superconducting nanowires can be synthesised in high-throughput chemical routes and hold great promise as a low-dissipative material for superconducting devices. The applicability of superconducting nanowires, however, has been limited due to the lack of an adequate method to fit the nanowires into given electronic circuits. One of the biggest obstacles is to connect metal terminals to superconducting nanowires in order to establish electric contacts. One attractive method to surmount this difficulty is to synthesise superconducting nanowires directly upon metal terminals such that the nanowires electrically contact the metal surface. Here we demonstrate that this can be achieved by electrodeposition in molten salts. The 39-K superconductor magnesium diboride (MgB2) is electrodeposited to metal surfaces in the form of highly crystalline nanowires. The MgB2 nanowires achieve extensive electric contacts with the metal surfaces. The MgB2 nanowires carry high densities of supercurrents that are comparable to bulk materials. This approach to the electrodeposition of MgB2 nanowires provides a solution to one of the major challenges preventing practical applications of superconducting nanowires.
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Submitted 10 June, 2009;
originally announced June 2009.
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Electroplating of superconducting films of MgB2 from molten salts
Authors:
Hideki Abe,
Kenji Yoshii,
Kenji Nishida,
Motoharu Imai
Abstract:
ctical superconducting material for power-electric products such as superconducing tapes because of its high superconducting transition temperature (Tc) of 39 K and its high critical current density (Jc) under magnetic fields. Superconducting films of MgB2 have been, however, fabricated only on planar substrates with areas of several tens of a square centimeter at the largest so far due to the t…
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ctical superconducting material for power-electric products such as superconducing tapes because of its high superconducting transition temperature (Tc) of 39 K and its high critical current density (Jc) under magnetic fields. Superconducting films of MgB2 have been, however, fabricated only on planar substrates with areas of several tens of a square centimeter at the largest so far due to the technical limitation of the conventional fabrication methods. In this report, we describe a technique for the fabrication of MgB2 films by means of electrolysis on molten compounds of Mg and B, that is, electroplating of MgB2. Superconducting films of MgB2 with a Tc of 36 K were successfully electroplated on both the planar and curved surfaces using simple installations. The electroplating of MgB2 is expected to open a new route in the field of superconductor engineering because of its ability to fabricate superconducting films on large surfaces of various shapes.
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Submitted 15 November, 2002;
originally announced November 2002.
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Superconductivity of MI(MII0.5, Si0.5)2 (MI=Sr and Ba, MII=Al and Ga), ternary silicides with the AlB2-type structure
Authors:
Motoharu Imai,
Kenji Nishida,
Takashi Kimura,
Hideaki Kitazawa,
Hideki Abe,
Hijiri Kito,
Kenji Yoshii
Abstract:
Ternary silicides MI(MII0.5, Si0.5)2 (MI=Sr and Ba, MII=Al and Ga) were prepared by Ar arc melting. Powder X-ray diffraction indicates that they have the AlB2-type structure, in which Si and MII atoms are arranged in honeycomb layers and MI atoms are intercalated between them. Electrical resistivity and dc magnetization measurements revealed that Sr(Al0.5, Si0.5)2 is superconductive, with a crit…
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Ternary silicides MI(MII0.5, Si0.5)2 (MI=Sr and Ba, MII=Al and Ga) were prepared by Ar arc melting. Powder X-ray diffraction indicates that they have the AlB2-type structure, in which Si and MII atoms are arranged in honeycomb layers and MI atoms are intercalated between them. Electrical resistivity and dc magnetization measurements revealed that Sr(Al0.5, Si0.5)2 is superconductive, with a critical temperature for superconductivity (TC) of 4.2 K, while Ba(Al0.5, Si0.5)2 is not at temperatures ranging above 2.0 K. Sr(Ga0.5, Si0.5)2 and Ba(Ga0.5, Si0.5)2 are also superconductors, with TCs of 5.1 and 3.3 K, respectively.
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Submitted 31 October, 2002;
originally announced October 2002.
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Field-Induced Magnetic Ordering in the Quantum Spin System KCuCl$_3$
Authors:
A. Oosawa,
T. Takamasu,
K. Tatani,
H. Abe,
N. Tsujii,
O. Suzuki,
H. Tanaka,
G. Kido,
K. Kindo
Abstract:
KCuCl$_3$ is a three-dimensional coupled spin-dimer system and has a singlet ground state with an excitation gap $Δ/k_{\rm B}=31$ K. High-field magnetization measurements for KCuCl$_3$ have been performed in static magnetic fields of up to 30 T and in pulsed magnetic fields of up to 60 T. The entire magnetization curve including the saturation region was obtained at $T=1.3$ K.
From the analysi…
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KCuCl$_3$ is a three-dimensional coupled spin-dimer system and has a singlet ground state with an excitation gap $Δ/k_{\rm B}=31$ K. High-field magnetization measurements for KCuCl$_3$ have been performed in static magnetic fields of up to 30 T and in pulsed magnetic fields of up to 60 T. The entire magnetization curve including the saturation region was obtained at $T=1.3$ K.
From the analysis of the magnetization curve, it was found that the exchange parameters determined from the dispersion relations of the magnetic excitations should be reduced, which suggests the importance of the renormalization effect in the magnetic excitations. The field-induced magnetic ordering accompanied by the cusplike minimum of the magnetization was observed as in the isomorphous compound TlCuCl$_3$. The phase boundary was almost independent of the field direction, and is represented by the power law. These results are consistent with the magnon Bose-Einstein condensation picture for field-induced magnetic ordering.
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Submitted 21 May, 2002;
originally announced May 2002.
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Electrical transport properties of bulk MgB2 materials synthesized by the electrolysis on fused mixtures of MgCl2, NaCl, KCl and MgB2O4
Authors:
Kenji Yoshii,
Hideki Abe
Abstract:
Electrolysis was carried out on fused mixtures of MgCl2, NaCl, KCl and MgB2O4 under an Ar flow at 600C. Electrical resistivity measurements for the grown deposits show an onset of superconducting transition at 37 K in the absence of applied magnetic field. The resistivity decreases down to zero below 32 K. From an applied-field dependence of resistivity, an upper critical field and a coherence l…
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Electrolysis was carried out on fused mixtures of MgCl2, NaCl, KCl and MgB2O4 under an Ar flow at 600C. Electrical resistivity measurements for the grown deposits show an onset of superconducting transition at 37 K in the absence of applied magnetic field. The resistivity decreases down to zero below 32 K. From an applied-field dependence of resistivity, an upper critical field and a coherence length were calculated to be 9.7 T and 5.9 nm at 0 K, respectively.
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Submitted 9 April, 2002;
originally announced April 2002.
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Electrochemical Synthesis of Superconductive Boride MgB2 from Molten Salts
Authors:
Hideki Abe,
Kenji Yoshii
Abstract:
Electrolysis has been performed on a fused mixture of magnesium chloride, potassium chloride, and magnesium borate at 600 oC under an Ar atmosphere using a graphite anode and a Pt cathode. Magnetic measurements and X-ray diffractometry have revealed that the resultant deposit on the cathode contains a few tens molar percent of MgB2. A voltanmetric measurement at the initial stage of electrolysis…
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Electrolysis has been performed on a fused mixture of magnesium chloride, potassium chloride, and magnesium borate at 600 oC under an Ar atmosphere using a graphite anode and a Pt cathode. Magnetic measurements and X-ray diffractometry have revealed that the resultant deposit on the cathode contains a few tens molar percent of MgB2. A voltanmetric measurement at the initial stage of electrolysis has shown that the threshold cathode voltage for the formation of MgB2 from the molten salts is -1.6 V.
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Submitted 8 April, 2002;
originally announced April 2002.
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Single crystal MgB2 with anisotropic superconducting properties
Authors:
M. Xu,
H. Kitazawa,
Y. Takano,
J. Ye,
K. Nishida,
H. Abe,
A. Matsushita,
G. Kido
Abstract:
The discovery of superconductor in magnesium diboride MgB2 with high Tc (39 K) has raised some challenging issues; whether this new superconductor resembles a high temperature cuprate superconductor(HTS) or a low temperature metallic superconductor; which superconducting mechanism, a phonon- mediated BCS or a hole superconducting mechanism or other new exotic mechanism may account for this super…
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The discovery of superconductor in magnesium diboride MgB2 with high Tc (39 K) has raised some challenging issues; whether this new superconductor resembles a high temperature cuprate superconductor(HTS) or a low temperature metallic superconductor; which superconducting mechanism, a phonon- mediated BCS or a hole superconducting mechanism or other new exotic mechanism may account for this superconductivity; and how about its future for applications. In order to clarify the above questions, experiments using the single crystal sample are urgently required. Here we have first succeeded in obtaining the single crystal of this new MgB2 superconductivity, and performed its electrical resistance and magnetization measurements. Their experiments show that the electronic and magnetic properties depend on the crystallographic direction. Our results indicate that the single crystal MgB2 superconductor shows anisotropic superconducting properties and thus can provide scientific basis for the research of its superconducting mechanism and its applications.
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Submitted 14 May, 2001;
originally announced May 2001.
