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Resonant two-laser spin-state spectroscopy of a negatively charged quantum dot-microcavity system with a cold permanent magnet
Authors:
P. Steindl,
T. van der Ent,
H. van der Meer,
J. A. Frey,
J. Norman,
J. E. Bowers,
D. Bouwmeester,
W. Löffler
Abstract:
A high-efficiency spin-photon interface is an essential piece of quantum hardware necessary for various quantum technologies. Self-assembled InGaAs quantum dots have excellent optical properties, if embedded into an optical micro-cavity they can show near-deterministic spin-photon entanglement and spin readout, but an external magnetic field is required to address the individual spin states, which…
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A high-efficiency spin-photon interface is an essential piece of quantum hardware necessary for various quantum technologies. Self-assembled InGaAs quantum dots have excellent optical properties, if embedded into an optical micro-cavity they can show near-deterministic spin-photon entanglement and spin readout, but an external magnetic field is required to address the individual spin states, which usually is done using a superconducting magnet. Here, we show a compact cryogenically compatible SmCo magnet design that delivers 475 mT in-plane Voigt geometry magnetic field at 5 K, which is suitable to lift the energy degeneracy of the electron spin states and trion transitions of a single InGaAs quantum dot. This quantum dot is embedded in a birefringent high-finesse optical micro-cavity which enables efficient collection of single photons emitted by the quantum dot. We demonstrate spin-state manipulation by addressing the trion transitions with a single and two laser fields. The experimental data agrees well to our model which covers single- and two-laser cross-polarized resonance fluorescence, Purcell enhancement in a birefringent cavity, and variation of the laser powers.
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Submitted 5 March, 2023;
originally announced March 2023.
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Dislocation-induced structural and luminescence degradation in InAs quantum dot emitters on silicon
Authors:
Eamonn T. Hughes,
Gunnar Kusch,
Jennifer Selvidge,
Bastien Bonef,
Justin Norman,
Chen Shang,
John E. Bowers,
Rachel A. Oliver,
Kunal Mukherjee
Abstract:
We probe the extent to which dislocations reduce carrier lifetimes and alter luminescence and growth morphology in InAs quantum dots (QD) grown on silicon. These heterostructures are key ingredients to achieving a highly reliable monolithically integrated light source on silicon necessary for photonic integrated circuits. We find up to 20-30% shorter carrier lifetimes at spatially resolved individ…
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We probe the extent to which dislocations reduce carrier lifetimes and alter luminescence and growth morphology in InAs quantum dots (QD) grown on silicon. These heterostructures are key ingredients to achieving a highly reliable monolithically integrated light source on silicon necessary for photonic integrated circuits. We find up to 20-30% shorter carrier lifetimes at spatially resolved individual dislocations from both the QD ground and excited states at room temperature using time-resolved cathodoluminescence spectroscopy. These lifetimes are consistent with differences in the intensity measured under steady-state excitation suggesting that trap-assisted recombination limits the minority carrier lifetime, even away from dislocations. Our techniques also reveal the dramatic growth of misfit dislocations in these structures under carrier injection fueled by recombination-enhanced dislocation glide and III-V/Si residual strain. Beyond these direct effects of increased nonradiative recombination, we find the long-range strain field of misfit dislocations deeper in the defect filter layers employed during III-V/Si growth alter the QD growth environment and introduce a crosshatch-like variation in the QD emission color and intensity when the filter layer is positioned close to the QD emitter layer. Sessile threading dislocations generate even more egregious hillock defects that also reduce emission intensities by altering layer thicknesses, as measured by transmission electron microscopy and atom probe tomography. Our work presents a more complete picture of the impacts of dislocations relevant for the development of light sources for scalable silicon photonic integrated circuits.
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Submitted 9 January, 2023;
originally announced January 2023.
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Ultralow voltage, High-speed, and Energy-efficient Cryogenic Electro-Optic Modulator
Authors:
Paolo Pintus,
Anshuman Singh,
Weiqiang Xie,
Leonardo Ranzani,
Martin V. Gustafsson,
Minh A. Tran,
Chao Xiang,
Jonathan Peters,
John E. Bowers,
Moe Soltani
Abstract:
Photonic integrated circuits (PICs) at cryogenic temperatures enable a wide range of applications in scalable classical and quantum systems for computing and sensing. A promising application of cryogenic PICs is to provide optical interconnects by up-converting signals from electrical to optical domain, allowing massive data-transfer from 4 K superconducting (SC) electronics to room temperature en…
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Photonic integrated circuits (PICs) at cryogenic temperatures enable a wide range of applications in scalable classical and quantum systems for computing and sensing. A promising application of cryogenic PICs is to provide optical interconnects by up-converting signals from electrical to optical domain, allowing massive data-transfer from 4 K superconducting (SC) electronics to room temperature environment. Such a solution is central to overcome the major bottleneck in the scalability of cryogenic systems, which currently rely on bulky copper cables that suffer from limited bandwidth, large heat load, and do not show any scalability path. A key element for realizing a cryogenic-to-room temperature optical interconnect is a high-speed electro-optic (EO) modulator operating at 4 K with operation voltage at mV scale, compatible with SC electronics. Although several cryogenic EO modulators have been demonstrated, their driving voltages are significantly large compared to the mV scale voltage required for SC circuits. Here, we demonstrate a cryogenic modulator with ~10 mV peak-to-peak driving voltage and gigabits/sec data rate, with ultra-low electric and optical energy consumptions of ~10.4 atto-joules/bit and ~213 femto-joules/bit, respectively. We achieve this record performance by designing a compact optical ring resonator modulator in a heterogeneous InP-on-Silicon platform, where we optimize a multi-quantum well layer of InAIGaAs to achieve a strong EO effect at 4 K. Unlike other semiconductors such as silicon, our platform benefits from the high-carrier mobility and minimal free carrier freezing of III-V compounds at low temperatures, with moderate doping level and low loss (intrinsic resonator Q~272,000). These modulators can pave the path for complex cryogenic photonic functionalities and massive data transmission between cryogenic and room-temperature electronics.
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Submitted 7 July, 2022;
originally announced July 2022.
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A low-power integrated magneto-optic modulator on silicon for cryogenic applications
Authors:
Paolo Pintus,
Leonardo Ranzani,
Sergio Pinna,
Duanni Huang,
Martin V. Gustafsson,
Fotini Karinou,
Giovanni Andrea Casula,
Yuya Shoji,
Yota Takamura,
Tetsuya Mizumoto,
Mohammad Soltani,
John E. Bowers
Abstract:
A fundamental challenge of the quantum revolution is to efficiently interface the quantum computing systems operating at cryogenic temperatures with room temperature electronics and media for high data-rate communication. Current approaches to control and readout of such cryogenic computing systems use electrical cables, which prevent scalability due to their large size, heat conduction, and limit…
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A fundamental challenge of the quantum revolution is to efficiently interface the quantum computing systems operating at cryogenic temperatures with room temperature electronics and media for high data-rate communication. Current approaches to control and readout of such cryogenic computing systems use electrical cables, which prevent scalability due to their large size, heat conduction, and limited bandwidth1. A more viable approach is to use optical fibers which allow high-capacity transmission and thermal isolation. A key component in implementing photonic datalinks is a cryogenic optical modulator for converting data from the electrical to the optical domain at high speed and with low power consumption, while operating at temperatures of 4 K or lower. Cryogenic modulators based on the electro-optic effect have been demonstrated in a variety of material platforms, however they are voltage driven components while superconducting circuits are current based, resulting in a large impedance mismatch. Here, we present the first demonstration of an integrated current-driven modulator based on the magneto-optic effect operating over a wide temperature range that extends down to less than 4 K. The modulator works at data rates up to 2 Gbps with energy consumption below 4 pJ/bit, and we show that this figure can be reduced to less than 40 fJ/bit with optimized design and fabrication. This modulator is a hybrid device, where a current-driven magneto-optically active crystal (cerium substituted yttrium iron garnet, or Ce:YIG) is bonded to a high-quality silicon microring resonator. Because of its potential for extremely low power consumption under cryogenic conditions, the class of magneto-optical modulators demonstrated here has the potential to enable efficient data links in large-scale systems for quantum information processing.
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Submitted 9 September, 2021;
originally announced September 2021.
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Defect filtering for thermal expansion induced dislocations in III-V lasers on silicon
Authors:
Jennifer Selvidge,
Justin Norman,
Eamonn T. Hughes,
Chen Shang,
Daehwan Jung,
Aidan A. Taylor,
MJ Kennedy,
Robert Herrick,
John E. Bowers,
Kunal Mukherjee
Abstract:
Epitaxially integrated III-V semiconductor lasers for silicon photonics have the potential to dramatically transform information networks, but currently, dislocations limit performance and reliability even in defect tolerant InAs quantum dot (QD) based lasers. Despite being below critical thickness, QD layers in these devices contain previously unexplained misfit dislocations, which facilitate non…
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Epitaxially integrated III-V semiconductor lasers for silicon photonics have the potential to dramatically transform information networks, but currently, dislocations limit performance and reliability even in defect tolerant InAs quantum dot (QD) based lasers. Despite being below critical thickness, QD layers in these devices contain previously unexplained misfit dislocations, which facilitate non-radiative recombination. We demonstrate here that these misfit dislocations form during post-growth cooldown due to the combined effects of (1) thermal-expansion mismatch between the III-V layers and silicon and (2) precipitate and alloy hardening in the active region. By incorporating an additional sub-critical thickness, indium-alloyed misfit dislocation trapping layer, we leverage these mechanical hardening effects to our advantage, successfully displacing 95% of misfit dislocations from the QD layer in model structures. Unlike conventional dislocation mitigation strategies, the trapping layer reduces neither the number of threading dislocations nor the number of misfit dislocations. It simply shifts the position of misfit dislocations away from the QD layer, reducing the defects' impact on luminescence. In full lasers, adding a misfit dislocation trapping layer both above and below the QD active region displaces misfit dislocations and substantially improves performance: we measure a twofold reduction in lasing threshold currents and a greater than threefold increase in output power. Our results suggest that devices employing both traditional threading dislocation reduction techniques and optimized misfit dislocation trapping layers may finally lead to fully integrated, commercially viable silicon-based photonic integrated circuits.
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Submitted 4 August, 2020; v1 submitted 12 May, 2020;
originally announced May 2020.
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Reduced thermal conductivity of epitaxial GaAs on Si due to symmetry-breaking biaxial strain
Authors:
Alejandro Vega-Flick,
Daehwan Jung,
Shengying Yue,
John E. Bowers,
Bolin Liao
Abstract:
Epitaxial growth of III-V semiconductors on Si is a promising route for silicon photonics. Threading dislocations and the residual thermal stress generated during growth are expected to affect the thermal conductivity of the III-V semiconductors, which is crucial for efficient heat dissipation from photonic devices built on this platform. In this work, we combine a non-contact laser-induced transi…
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Epitaxial growth of III-V semiconductors on Si is a promising route for silicon photonics. Threading dislocations and the residual thermal stress generated during growth are expected to affect the thermal conductivity of the III-V semiconductors, which is crucial for efficient heat dissipation from photonic devices built on this platform. In this work, we combine a non-contact laser-induced transient thermal grating technique with ab initio phonon simulations to investigate the in-plane thermal transport of epitaxial GaAs-based buffer layers on Si, employed in the fabrication of III-V quantum dot lasers. Surprisingly, we find a significant reduction of the in-plane thermal conductivity of GaAs, up to 19%, as a result of a small in-plane biaxial stress of 250 MPa. Using ab initio phonon calculations, we attribute this effect to the enhancement of phonon-phonon scattering caused by the in-plane biaxial stress, which breaks the cubic crystal symmetry of GaAs. Our results indicate the importance of eliminating the residual thermal stress in the epitaxial III-V layers on Si to avoid the reduction of thermal conductivity and facilitate heat dissipation. Additionally, our results showcase potential means of effectively controlling thermal conductivity of solids with external strain/stress.
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Submitted 10 January, 2019;
originally announced January 2019.
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Probing interacting two-level systems with rare-earth ions
Authors:
Dapeng Ding,
David van Driel,
Lino M. C. Pereira,
Jared F. Bauters,
Martijn J. R. Heck,
Gesa Welker,
Michiel J. A. de Dood,
André Vantomme,
John E. Bowers,
Wolfgang Löffler,
Dirk Bouwmeester
Abstract:
Two-level systems (TLS) in amorphous materials limit coherence times of a number of solid-state quantum devices. Interactions between TLS become prominent below 100 mK, but the coupling mechanism and statistical properties are still unclear. Here we determine the homogeneous linewidth of ytterbium ions (Yb$ ^{3+} $) in silica glass at 10-80 mK by using photon echo techniques as a probe of TLS. Fir…
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Two-level systems (TLS) in amorphous materials limit coherence times of a number of solid-state quantum devices. Interactions between TLS become prominent below 100 mK, but the coupling mechanism and statistical properties are still unclear. Here we determine the homogeneous linewidth of ytterbium ions (Yb$ ^{3+} $) in silica glass at 10-80 mK by using photon echo techniques as a probe of TLS. First, the homogeneous linewidth can be reduced by applying a magnetic field of 0.3 T. This effect is due to reduced magnetic interactions between adjacent Yb$ ^{3+} $. Secondly, we observe saturation of the linewidth below 50 mK to a level of approximately 30 kHz, which is much larger than the lifetime-limited value of 0.2 kHz. This saturation behavior is in conflict with the coupling to independent TLS. We show that this effect can be explained by coherently coupled TLS.
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Submitted 29 January, 2020; v1 submitted 13 November, 2018;
originally announced November 2018.
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An electrical probe of the phonon mean-free path spectrum
Authors:
Ashok T. Ramu,
Nicole I. Halaszynski,
Jonathan D. Peters,
Carl D. Meinhart,
John E. Bowers
Abstract:
Most studies of the mean-free path accumulation function (MFPAF) rely on optical techniques to probe heat transfer at length scales on the order of the phonon mean-free path. In this paper, we propose and implement a purely electrical probe of the MFPAF that relies on photo-lithographically defined heater-thermometer separation to set the length scale. An important advantage of the proposed techni…
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Most studies of the mean-free path accumulation function (MFPAF) rely on optical techniques to probe heat transfer at length scales on the order of the phonon mean-free path. In this paper, we propose and implement a purely electrical probe of the MFPAF that relies on photo-lithographically defined heater-thermometer separation to set the length scale. An important advantage of the proposed technique is its insensitivity to the thermal interfacial impedance and its compatibility with a large array of temperature-controlled chambers that lack optical ports. Detailed analysis of the experimental data based on the enhanced Fourier law (EFL) demonstrates that heat-carrying phonons in gallium arsenide have a much wider mean-free path spectrum than originally thought.
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Submitted 11 February, 2016; v1 submitted 31 January, 2016;
originally announced February 2016.
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Reduction of the effective thermal conductivity by circulation of the quasi-ballistic heat-flux
Authors:
Ashok T. Ramu,
Carl D. Meinhart,
John E. Bowers
Abstract:
For a thermal conductivity that is spatially uniform and independent of temperature, Fourier's law of heat transfer predicts a curl-free heat-flux. In the quasi-ballistic phonon transport regime, where the Fourier law breaks down, it has been proven starting from the Boltzmann transport equation that the constitutive relation for the heat-flux contains a solenoidal (circulatory) term with zero div…
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For a thermal conductivity that is spatially uniform and independent of temperature, Fourier's law of heat transfer predicts a curl-free heat-flux. In the quasi-ballistic phonon transport regime, where the Fourier law breaks down, it has been proven starting from the Boltzmann transport equation that the constitutive relation for the heat-flux contains a solenoidal (circulatory) term with zero divergence and non-zero curl. In this paper we show how to reduce the effective thermal conductivity of a material with dimensions on the same scale as the phonon mean-free path, by exploiting the solenoidal term in the constitutive relation.
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Submitted 31 January, 2016;
originally announced February 2016.
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A generalized enhanced Fourier law and underlying connections to major frameworks for quasi-ballistic phonon transport
Authors:
Ashok T. Ramu,
John E. Bowers
Abstract:
An enhanced Fourier law (EFL) that accounts for quasi-ballistic phonon transport effects in a formulation entirely in terms of physical observables, is derived from the Boltzmann transport equation, assuming a gray population of quasi-ballistic phonon modes. This equation is generalized to an arbitrary phonon population. Other phonon transport models are analyzed in the context of the generalized…
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An enhanced Fourier law (EFL) that accounts for quasi-ballistic phonon transport effects in a formulation entirely in terms of physical observables, is derived from the Boltzmann transport equation, assuming a gray population of quasi-ballistic phonon modes. This equation is generalized to an arbitrary phonon population. Other phonon transport models are analyzed in the context of the generalized EFL and connections are made between the generalized EFL and other models, revealing the essential unity of seemingly disparate models reported in the literature.
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Submitted 10 February, 2016; v1 submitted 1 June, 2015;
originally announced June 2015.
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On the solenoidal heat-flux in quasi-ballistic thermal conduction
Authors:
Ashok T. Ramu,
John E. Bowers
Abstract:
The Boltzmann transport equation for phonons is recast directly in terms of the heat-flux by means of iteration followed by truncation at the second order in the spherical harmonic expansion of the distribution function. This procedure displays the heat-flux in an explicitly coordinate-invariant form, and leads to a natural decomposition into two components, namely the solenoidal component in addi…
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The Boltzmann transport equation for phonons is recast directly in terms of the heat-flux by means of iteration followed by truncation at the second order in the spherical harmonic expansion of the distribution function. This procedure displays the heat-flux in an explicitly coordinate-invariant form, and leads to a natural decomposition into two components, namely the solenoidal component in addition to the usual irrotational component. The solenoidal heat-flux is explicitly shown to arise by applying the heat-flux equation to a right-circular cylinder. These findings are important in the context of phonon resonators that utilize the strong quasi-ballistic thermal transport reported recently in silicon membranes at room temperature.
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Submitted 13 September, 2015; v1 submitted 10 May, 2015;
originally announced May 2015.
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A compact heat transfer model based on an enhanced Fourier law for analysis of frequency-domain thermoreflectance experiments
Authors:
Ashok T. Ramu,
John E. Bowers
Abstract:
A recently developed enhanced Fourier law is applied to the problem of extracting thermal properties of materials from frequency-domain thermoreflectance (FDTR) experiments. The heat transfer model comprises contributions from two phonon channels; one a high-heat-capacity diffuse channel consisting of phonons of mean free path (MFP) less than a threshold value, and the other a low-heat-capacity ch…
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A recently developed enhanced Fourier law is applied to the problem of extracting thermal properties of materials from frequency-domain thermoreflectance (FDTR) experiments. The heat transfer model comprises contributions from two phonon channels; one a high-heat-capacity diffuse channel consisting of phonons of mean free path (MFP) less than a threshold value, and the other a low-heat-capacity channel consisting of phonons with MFP higher than this value that travel quasi-ballistically over length scales of interest. The diffuse channel is treated using the Fourier law, while the quasi-ballistic channel is analyzed using a second-order spherical harmonic expansion of the phonon distribution function. A recent analysis of FDTR experimental data suggested the use of FDTR in deriving large portions of the MFP accumulation function; however, it is shown here that the data can adequately be explained using our minimum-parameter model, thus highlighting an important limitation of FDTR experiments in exploring the accumulation function of bulk matter.
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Submitted 20 August, 2015; v1 submitted 18 April, 2015;
originally announced April 2015.
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Quasi-ballistic phonon transport effects on the determination of the mean-free path accumulation function for the effective thermal conductivity
Authors:
Ashok T. Ramu,
John E. Bowers
Abstract:
The mean-free path (MFP) accumulation function for the effective thermal conductivity, introduced by Dames and Chen is a compact, universal and highly useful summary of the effect of ballistic thermal transport on the effective thermal conductivity measured by various experiments. The frequency domain thermoreflectance (FDTR) experiment is especially well suited to its determination. Extraction of…
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The mean-free path (MFP) accumulation function for the effective thermal conductivity, introduced by Dames and Chen is a compact, universal and highly useful summary of the effect of ballistic thermal transport on the effective thermal conductivity measured by various experiments. The frequency domain thermoreflectance (FDTR) experiment is especially well suited to its determination. Extraction of the accumulation function from this experiment uses the thermal penetration depth (TPD) of phonons at each frequency as a cut-off for classifying phonons as ballistic or diffusive at that frequency. In this paper, we show that using the TPD as a cut-off is arbitrary and prone to serious error. We report on a new technique to deduce the MFP accumulation function from the FDTR experiment by numerical solution of an enhanced Fourier law.
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Submitted 20 August, 2015; v1 submitted 20 February, 2015;
originally announced February 2015.
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Demonstration of electron filtering to increase the Seebeck coefficient in ErAs:InGaAs/InGaAlAs superlattices
Authors:
J. M. O. Zide,
D. Vashaee,
G. Zeng,
J. E. Bowers,
A. Shakouri,
A. C. Gossard
Abstract:
In this letter, we explore electron filtering as a technique to increase Seebeck coefficient and the thermoelectric power factor of heterostructured materials over that of the bulk. We present a theoretical model in which Seebeck coefficient and the power factor can be increased in an InGaAs based composite material. Experimental measurements of the cross-plane Seebeck coefficient are presented…
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In this letter, we explore electron filtering as a technique to increase Seebeck coefficient and the thermoelectric power factor of heterostructured materials over that of the bulk. We present a theoretical model in which Seebeck coefficient and the power factor can be increased in an InGaAs based composite material. Experimental measurements of the cross-plane Seebeck coefficient are presented and confirm the importance of the electron filtering technique to decouple the electrical conductivity and Seebeck coefficient to increase the thermoelectric power factor.
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Submitted 18 October, 2005;
originally announced October 2005.
