Showing 1–28 of 28 results for author: Shang, C

Observation of tunable topological polaritons in a cavity waveguide

Authors: Dong Zhao, Ziyao Wang, Linyun Yang, Yuxin Zhong, Xiang Xi, Zhenxiao Zhu, Maohua Gong, Qingan Tu, Yan Meng, Bei Yan, Ce Shang, Zhen Gao

Abstract: Topological polaritons characterized by light-matter interactions have become a pivotal platform in exploring new topological phases of matter. Recent theoretical advances unveiled a novel mechanism for tuning topological phases of polaritons by modifying the surrounding photonic environment (light-matter interactions) without altering the lattice structure. Here, by embedding a dimerized chain of… ▽ More Topological polaritons characterized by light-matter interactions have become a pivotal platform in exploring new topological phases of matter. Recent theoretical advances unveiled a novel mechanism for tuning topological phases of polaritons by modifying the surrounding photonic environment (light-matter interactions) without altering the lattice structure. Here, by embedding a dimerized chain of microwave helical resonators (electric dipole emitters) in a metallic cavity waveguide, we report the pioneering observation of tunable topological phases of polaritons by varying the cavity width which governs the surrounding photonic environment and the strength of light-matter interactions. Moreover, we experimentally identified a new type of topological phase transition which includes three non-coincident critical points in the parameter space: the closure of the polaritonic bandgap, the transition of the Zak phase, and the hybridization of the topological edge states with the bulk states. These results reveal some remarkable and uncharted properties of topological matter when strongly coupled to light and provide an innovative design principle for tunable topological photonic devices. △ Less

Submitted 18 January, 2024; originally announced January 2024.

Comments: 6 pages, 4 figures

Magnetic properties of van der Waals layered single crystals DyOBr and SmOCl

Authors: Feihao Pan, Daye Xu, Songnan Sun, Jiale Huang, Chenglin Shang, Bingxian Shi, Xuejuan Gui, Jianfei Qin, Hongliang Wang, Lijie Hao, Jinchen Wang, Juanjuan Liu, Hongxia Zhang, Peng Cheng

Abstract: Two-dimensional van der Waals single crystals DyOBr and SmOCl have been grown by flux method and their anisotropic magnetic properties are reported. DyOBr orders antiferromagnetically at T$_{N}$=9.5 K with magnetic moments lying along $a$-axis, similar as DyOCl. Its magnetic susceptibility shows an anomaly at T$^{*}$=30 K possibly due to the crystal field effect. Furthermore a 1/3 magnetization pl… ▽ More Two-dimensional van der Waals single crystals DyOBr and SmOCl have been grown by flux method and their anisotropic magnetic properties are reported. DyOBr orders antiferromagnetically at T$_{N}$=9.5 K with magnetic moments lying along $a$-axis, similar as DyOCl. Its magnetic susceptibility shows an anomaly at T$^{*}$=30 K possibly due to the crystal field effect. Furthermore a 1/3 magnetization plateau is clearly observed under H$\parallel$a and H$\parallel$[110], which might be a field-induced spin-flop phase or some exotic quantum magnetic state. On the other hand, isostructural SmOCl undergoes an antiferromagnetic transition at T$_{N}$=7.1 K and exhibits a contrasting Ising-like perpendicular $c$-axis magnetic anisotropy, which could be well explained by our crystal field calculations. Both DyOBr and SmOCl are insulators with band gap of $\sim$5 eV, our results suggest they are promising in building van der Waals heterostructures and applications in multifunctional devices. △ Less

Submitted 7 July, 2024; v1 submitted 12 January, 2024; originally announced January 2024.

Comments: 6 pages, 5 figures

Combined experimental and theoretical studies on glasslike transitions in the frustrated molecular conductors $θ$-(BEDT-TTF)$_2MM'$(SCN)$_4$

Authors: Yohei Saito, Owen Ganter, Chao Shang, Kenichiro Hashimoto, Takahiko Sasaki, Stephen M. Winter, Jens Müller, Michael Lang

Abstract: We present results of the coefficient of thermal expansion for the frustrated quasi-two-dimensional molecular conductor $θ$-(BEDT-TTF)$_2$RbZn(SCN)$_4$ for temperatures 1.5 K $\leq T \leq$ 290 K. A pronounced first-order phase transition anomaly is observed at the combined charge-order/structural transition at 215 K. Furthermore, clear evidence is found for two separate glasslike transitions at… ▽ More We present results of the coefficient of thermal expansion for the frustrated quasi-two-dimensional molecular conductor $θ$-(BEDT-TTF)$_2$RbZn(SCN)$_4$ for temperatures 1.5 K $\leq T \leq$ 290 K. A pronounced first-order phase transition anomaly is observed at the combined charge-order/structural transition at 215 K. Furthermore, clear evidence is found for two separate glasslike transitions at $T_{\mathrm{g}}$ = 90-100 K and $T_{\mathrm{g}}^\dagger$ = 120-130 K, similar to previous findings for $θ$-(BEDT-TTF)$_2$CsZn(SCN)$_4$ and $θ$-(BEDT-TTF)$_2$CsCo(SCN)$_4$, reported in T. Thomas et al., Phys. Rev. B 105, L041114 (2022), both of which lack the charge-order/structural transition. Our findings indicate that these glasslike transitions are common features for the $θ$-(BEDT-TTF)$_2MM^\prime$(SCN)$_4$ family with $M$ = (Rb, Cs) and $M^\prime$ = (Co, Zn), irrespective of the presence or absence of charge order. These results are consistent with our model calculations on the glasslike dynamics associated with the flexible ethylene endgroups of the BEDT-TTF molecules for various $θ$-(BEDT-TTF)$_2MM^\prime$(SCN)$_4$ salts, predicting two different conformational glass transitions. Moreover, calculations of the hopping integrals show a substantial degree of dependence on the endgroups' conformation, suggesting a significant coupling to the electronic degrees of freedom. Our findings support the possibility that the glassy freezing of the ethylene endgroups could drive or enhance glassy charge dynamics. △ Less

Submitted 25 October, 2023; originally announced October 2023.

Comments: 11 pages, 10 figures, 1 table

Journal ref: Phys. Rev. Research 6, 023003 (2024)

FeGe1-xSbx:a series of novel kagome metals with noncollinear antiferromagnetism

Authors: Jiale Huang, Chenglin Shang, Jianfei Qin, Feihao Pan, Bingxian Shi, Jinchen Wang, Juanjuan Liu, Daye Xu, Hongxia Zhang, Hongliang Wang, Lijie Hao, Peng Cheng

Abstract: Kagome metals are important for exploring emergent phenomena due to the interplay between band topology and electron correlation.Motivated by the recent discovery of charge density wave in a kagome lattice antiferromagnetic FeGe,we investigate the impact of Sb doping on the structural,charge and magnetic order of FeGe.The charge density wave is rapidly suppressed by Sb doping(~1.5%) and the antife… ▽ More Kagome metals are important for exploring emergent phenomena due to the interplay between band topology and electron correlation.Motivated by the recent discovery of charge density wave in a kagome lattice antiferromagnetic FeGe,we investigate the impact of Sb doping on the structural,charge and magnetic order of FeGe.The charge density wave is rapidly suppressed by Sb doping(~1.5%) and the antiferromagnetic ordering temperature gradually shifts to 280K for FeGe0.7Sb0.3.For FeGe1-xSbx with x>0.1,crystal structures with slightly distorted Fe kagome lattice are formed.Their magnetic anisotropy has significant change,temperature driven spin-reorientation and field-induced spin-flop transition are identified from magnetization measurement.Interestingly,neutron diffraction reveals noncollinear antiferromagnetic structures widely exist below TN for all sample with x>0.1.This noncollinear magnetic orders could possibly be unconventional and resulted from onsite repulsion and filling condition of kagome flat band,as predicted by a recent theoretical work. △ Less

Submitted 3 October, 2023; v1 submitted 28 September, 2023; originally announced September 2023.

Journal ref: Physical Review B 108, 184431 (2023)

Brillouin Klein space and half-turn space in three-dimensional acoustic crystals

Authors: Zhenxiao Zhu, Linyun Yang, Jien Wu, Yan Meng, Xiang Xi, Bei Yan, Jingming Chen, Jiuyang Lu, Xueqin Huang, Weiyin Deng, Ce Shang, Perry Ping Shum, Yihao Yang, Hongsheng Chen, Gui-Geng Liu, Zhengyou Liu, Zhen Gao

Abstract: The Bloch band theory and Brillouin zone (BZ) that characterize wave behaviors in periodic mediums are two cornerstones of contemporary physics ranging from condensed matter to topological physics. Recent theoretical breakthrough revealed that, under the projective symmetry algebra enforced by artificial gauge fields, the usual two-dimensional (2D) BZ (orientable Brillouin two-torus) can be fundam… ▽ More The Bloch band theory and Brillouin zone (BZ) that characterize wave behaviors in periodic mediums are two cornerstones of contemporary physics ranging from condensed matter to topological physics. Recent theoretical breakthrough revealed that, under the projective symmetry algebra enforced by artificial gauge fields, the usual two-dimensional (2D) BZ (orientable Brillouin two-torus) can be fundamentally modified to a non-orientable Brillouin Klein bottle with radically distinct topology and novel topological phases. However, the physical consequence of artificial gauge fields on the more general three-dimensional (3D) BZ (orientable Brillouin three-torus) was so far missing. Here, we report the first theoretical discovery and experimental observation of non-orientable Brillouin Klein space and orientable Brillouin half-turn space in a 3D acoustic crystal with artificial gauge fields. We experimentally identify peculiar 3D momentum-space non-symmorphic screw rotation and glide reflection symmetries in the measured band structures. Moreover, we demonstrate a novel 3D Klein bottle insulator featuring a nonzero Z_2 topological invariant and self-collimated topological surface states at two opposite surfaces related by a nonlocal twist, radically distinct from all previous topological insulators. Our discovery not only fundamentally modifies the 3D Bloch band theory and 3D BZ, but also opens the door towards a wealth of previously overlooked momentum-space topologies and unexplored topological physics with gauge symmetry beyond the existing paradigms. △ Less

Submitted 15 May, 2023; originally announced May 2023.

Dislocation-induced structural and luminescence degradation in InAs quantum dot emitters on silicon

Authors: Eamonn T. Hughes, Gunnar Kusch, Jennifer Selvidge, Bastien Bonef, Justin Norman, Chen Shang, John E. Bowers, Rachel A. Oliver, Kunal Mukherjee

Abstract: We probe the extent to which dislocations reduce carrier lifetimes and alter luminescence and growth morphology in InAs quantum dots (QD) grown on silicon. These heterostructures are key ingredients to achieving a highly reliable monolithically integrated light source on silicon necessary for photonic integrated circuits. We find up to 20-30% shorter carrier lifetimes at spatially resolved individ… ▽ More We probe the extent to which dislocations reduce carrier lifetimes and alter luminescence and growth morphology in InAs quantum dots (QD) grown on silicon. These heterostructures are key ingredients to achieving a highly reliable monolithically integrated light source on silicon necessary for photonic integrated circuits. We find up to 20-30% shorter carrier lifetimes at spatially resolved individual dislocations from both the QD ground and excited states at room temperature using time-resolved cathodoluminescence spectroscopy. These lifetimes are consistent with differences in the intensity measured under steady-state excitation suggesting that trap-assisted recombination limits the minority carrier lifetime, even away from dislocations. Our techniques also reveal the dramatic growth of misfit dislocations in these structures under carrier injection fueled by recombination-enhanced dislocation glide and III-V/Si residual strain. Beyond these direct effects of increased nonradiative recombination, we find the long-range strain field of misfit dislocations deeper in the defect filter layers employed during III-V/Si growth alter the QD growth environment and introduce a crosshatch-like variation in the QD emission color and intensity when the filter layer is positioned close to the QD emitter layer. Sessile threading dislocations generate even more egregious hillock defects that also reduce emission intensities by altering layer thicknesses, as measured by transmission electron microscopy and atom probe tomography. Our work presents a more complete picture of the impacts of dislocations relevant for the development of light sources for scalable silicon photonic integrated circuits. △ Less

Submitted 9 January, 2023; originally announced January 2023.

Comments: 15 pages, 6 figures

Origin of performance degradation in high-delithiation Li$_x$CoO$_2$: insights from direct atomic simulations using global neural network potentials

Authors: Pan Zhang, Cheng Shang, Zhipan Liu, Ji-Hui Yang, Xin-Gao Gong

Abstract: Li$_x$CoO$_2$ based batteries have serious capacity degradation and safety issues when cycling at high-delithiation states but full and consistent mechanisms are still poorly understood. Herein, a global neural network potential (GNNP) is developed to provide direct theoretical understandings by performing long-time and large-size atomic simulations. We propose a self-consistent picture as follows… ▽ More Li$_x$CoO$_2$ based batteries have serious capacity degradation and safety issues when cycling at high-delithiation states but full and consistent mechanisms are still poorly understood. Herein, a global neural network potential (GNNP) is developed to provide direct theoretical understandings by performing long-time and large-size atomic simulations. We propose a self-consistent picture as follows: (i) CoO$_2$ layers are easier to glide with longer distances at more highly delithiated states, resulting in structural transitions and structural inhomogeneity; (ii) at regions between different phases with different Li distributions due to gliding, local strains are induced and accumulate during cycling processes; (3) accumulated strains cause the rupture of Li diffusion channels and result in formation of oxygen dimers during cycling especially when Li has inhomogeneous distributions, leading to capacity degradations and safety issues. We find that large tensile strains combined with inhomogeneous distributions of Li ions play critical roles in the formation processes of blocked Li diffusion channels and the oxygen dimers at high-delithiation states, which could be the fundamental origins of capacity degradations and safety issues. Correspondingly, suppressing accumulations of strains by controlling charge and discharge conditions as well as suppressing the gliding will be helpful for improving the performance of lithium-ion batteries (LIBs). △ Less

Submitted 30 December, 2022; originally announced December 2022.

Comments: 17 pages, 5 figures, 1 table

IrF4: From Tetrahedral Compass Model to Topological Semimetal

Authors: C. Shang, O. Ganter, N. Heinsdorf, S. M. Winter

Abstract: The intersection of topology, symmetry, and magnetism yields a rich structure of possible phases. In this work, we study theoretically the consequences of magnetism on IrF4, which was recently identified as a possible candidate topological nodal chain semimetal in the absence of magnetic order. We show that the spin-orbital nature of the Ir moments gives rise to strongly anisotropic magnetic coupl… ▽ More The intersection of topology, symmetry, and magnetism yields a rich structure of possible phases. In this work, we study theoretically the consequences of magnetism on IrF4, which was recently identified as a possible candidate topological nodal chain semimetal in the absence of magnetic order. We show that the spin-orbital nature of the Ir moments gives rise to strongly anisotropic magnetic couplings resembling a tetrahedral compass model on a diamond lattice. The predicted magnetic ground state preserves key symmetries protecting the nodal lines, such that they persist into the ordered phase at the mean-field level. The consequences for other symmetry reductions are also discussed. △ Less

Submitted 12 December, 2022; originally announced December 2022.

Experimental identification of the second-order non-Hermitian skin effect with physics-graph-informed machine learning

Authors: Ce Shang, Shuo Liu, Ruiwen Shao, Peng Han, Xiaoning Zang, Xiangliang Zhang, Khaled Nabil Salama, Wenlong Gao, Ching Hua Lee, Ronny Thomale, Aurelien Manchon, Shuang Zhang, Tie Jun Cui, Udo Schwingenschlogl

Abstract: Topological phases of matter are conventionally characterized by the bulk-boundary correspondence in Hermitian systems: The topological invariant of the bulk in $d$ dimensions corresponds to the number of $(d-1)$-dimensional boundary states. By extension, higher-order topological insulators reveal a bulk-edge-corner correspondence, such that $n$-th order topological phases feature $(d-n)$-dimensio… ▽ More Topological phases of matter are conventionally characterized by the bulk-boundary correspondence in Hermitian systems: The topological invariant of the bulk in $d$ dimensions corresponds to the number of $(d-1)$-dimensional boundary states. By extension, higher-order topological insulators reveal a bulk-edge-corner correspondence, such that $n$-th order topological phases feature $(d-n)$-dimensional boundary states. The advent of non-Hermitian topological systems sheds new light on the emergence of the non-Hermitian skin effect (NHSE) with an extensive number of boundary modes under open boundary conditions. Still, the higher-order NHSE remains largely unexplored, particularly in the experiment. We introduce an unsupervised approach -- physics-graph-informed machine learning (PGIML) -- to enhance the data mining ability of machine learning with limited domain knowledge. Through PGIML, we experimentally demonstrate the second-order NHSE in a two-dimensional non-Hermitian topolectrical circuit. The admittance spectra of the circuit exhibit an extensive number of corner skin modes and extreme sensitivity of the spectral flow to the boundary conditions. The violation of the conventional bulk-boundary correspondence in the second-order NHSE implies that modification of the topological band theory is inevitable in higher dimensional non-Hermitian systems. △ Less

Submitted 1 March, 2022; originally announced March 2022.

Second-order topological insulator and fragile topology in topological circuitry simulation

Authors: Ce Shang, Xiaoning Zang, Wenlong Gao, Udo Schwingenschlögl, Aurélien Manchon

Abstract: Second-order topological insulators (SOTIs) are the topological phases of matter in d dimensions that manifest (d-2)-dimensional localized modes at the intersection of the edges. We show that SOTIs can be designed via stacked Chern insulators with opposite chiralities connected by interlayer coupling. To characterize the bulk-corner correspondence, we establish a Jacobian-transformed nested Wilson… ▽ More Second-order topological insulators (SOTIs) are the topological phases of matter in d dimensions that manifest (d-2)-dimensional localized modes at the intersection of the edges. We show that SOTIs can be designed via stacked Chern insulators with opposite chiralities connected by interlayer coupling. To characterize the bulk-corner correspondence, we establish a Jacobian-transformed nested Wilson loop method and an edge theory that are applicable to a wider class of higher-order topological systems. The corresponding topological invariant admits a filling anomaly of the corner modes with fractional charges. The system manifests a fragile topological phase characterized by the absence of a Wannier gap in the Wilson loop spectrum. Furthermore, we argue that the proposed approach can be generalized to multilayers. Our work offers perspectives for exploring and understanding higher-order topological phenomena. △ Less

Submitted 19 September, 2020; originally announced September 2020.

Comments: 5 pages, 4 figures

Defect filtering for thermal expansion induced dislocations in III-V lasers on silicon

Authors: Jennifer Selvidge, Justin Norman, Eamonn T. Hughes, Chen Shang, Daehwan Jung, Aidan A. Taylor, MJ Kennedy, Robert Herrick, John E. Bowers, Kunal Mukherjee

Abstract: Epitaxially integrated III-V semiconductor lasers for silicon photonics have the potential to dramatically transform information networks, but currently, dislocations limit performance and reliability even in defect tolerant InAs quantum dot (QD) based lasers. Despite being below critical thickness, QD layers in these devices contain previously unexplained misfit dislocations, which facilitate non… ▽ More Epitaxially integrated III-V semiconductor lasers for silicon photonics have the potential to dramatically transform information networks, but currently, dislocations limit performance and reliability even in defect tolerant InAs quantum dot (QD) based lasers. Despite being below critical thickness, QD layers in these devices contain previously unexplained misfit dislocations, which facilitate non-radiative recombination. We demonstrate here that these misfit dislocations form during post-growth cooldown due to the combined effects of (1) thermal-expansion mismatch between the III-V layers and silicon and (2) precipitate and alloy hardening in the active region. By incorporating an additional sub-critical thickness, indium-alloyed misfit dislocation trapping layer, we leverage these mechanical hardening effects to our advantage, successfully displacing 95% of misfit dislocations from the QD layer in model structures. Unlike conventional dislocation mitigation strategies, the trapping layer reduces neither the number of threading dislocations nor the number of misfit dislocations. It simply shifts the position of misfit dislocations away from the QD layer, reducing the defects' impact on luminescence. In full lasers, adding a misfit dislocation trapping layer both above and below the QD active region displaces misfit dislocations and substantially improves performance: we measure a twofold reduction in lasing threshold currents and a greater than threefold increase in output power. Our results suggest that devices employing both traditional threading dislocation reduction techniques and optimized misfit dislocation trapping layers may finally lead to fully integrated, commercially viable silicon-based photonic integrated circuits. △ Less

Submitted 4 August, 2020; v1 submitted 12 May, 2020; originally announced May 2020.

Comments: 9 pages, 6 figures

Journal ref: Appl. Phys. Lett. 117 (2020) 122101

Artificial gauge fields and topological insulators in Moire superlattices

Authors: Ce Shang, Adel Abbout, Xiaoning Zang, Udo Schwingenschlogl, Aurelien Manchon

Abstract: We propose an innovative quantum emulator based on Moire superlattices showing that, by employing periodical modulation on each lattice site, one can create tunable, artificial gauge fields with imprinting Peierls phases on the hopping parameters and realize an analog of novel Haldane-like phase. As an application, we provide a methodology to directly quantify the topological invariant in such a s… ▽ More We propose an innovative quantum emulator based on Moire superlattices showing that, by employing periodical modulation on each lattice site, one can create tunable, artificial gauge fields with imprinting Peierls phases on the hopping parameters and realize an analog of novel Haldane-like phase. As an application, we provide a methodology to directly quantify the topological invariant in such a system from a dynamical quench process. This design shows a robustly integrated platform which opens a new door to investigate topological physics. △ Less

Submitted 1 December, 2019; originally announced December 2019.

Structural and electronic phase transitions driven by electric field in metastable MoS$_2$ thin flake

Authors: C. Shang, B. Lei, W. Z. Zhuo, Q. Zhang, C. S. Zhu, J. H. Cui, X. G. Luo, N. Z. Wang, F. B. Meng, L. K. Ma, C. G. Zeng, T. Wu, Z. Sun, F. Q. Huang, X. H. Chen

Abstract: Transition-metal-dichalcogenides own a variety of structures as well as electronic properties which can be modulated by structural variations, element substitutions, ion or molecule intercalations, etc. However, there is very limited knowledge on metastable phases of this family, especially the precise regulation of structural changes and accompanied evolution of electronic properties. Here, based… ▽ More Transition-metal-dichalcogenides own a variety of structures as well as electronic properties which can be modulated by structural variations, element substitutions, ion or molecule intercalations, etc. However, there is very limited knowledge on metastable phases of this family, especially the precise regulation of structural changes and accompanied evolution of electronic properties. Here, based on a new developed field-effect transistor with solid ion conductor as the gate dielectric, we report a controllable structural and electronic phase transitions in metastable MoS$_2$ thin flakes driven by electric field. We found that the metastable structure of 1T$^{'''}$-MoS$_2$ thin flake can be transformed into another metastable structure of 1T$^{'}$ -type upon intercalation of lithium regulated by electric field. Moreover, the metastable 1T$^{'}$ phase persists during the cycle of intercalation and de-intercalation of lithium controlled by electric field, and the electronic properties can be reversibly manipulated with a remarkable change of resistance by four orders of magnitude from the insulating 1T$^{'}$-LiMoS$_2$ to superconducting 1T$^{'}$-MoS$_2$. Such reversible and dramatic changes in electronic properties provide intriguing opportunities for development of novel nano-devices with highly tunable characteristics under electric field. △ Less

Submitted 25 February, 2019; originally announced February 2019.

Comments: 5 pages, 4 figures, supplementary information is not included

Journal ref: Phys. Rev. B 100, 020508 (2019)

Superconductivity in the metastable 1T' and 1T''' phases of MoS$_2$ crystals

Authors: C. Shang, Y. Q. Fang, Q. Zhang, N. Z. Wang, Y. F. Wang, Z. Liu, B. Lei, F. B. Meng, L. K. Ma, T. Wu, Z. F. Wang, C. G. Zeng, F. Q. Huang, Z. Sun, X. H. Chen

Abstract: Transition-metal dichalcogenides open novel opportunities for the exploration of exciting new physics and devices. As a representative system, 2H-MoS$_2$ has been extensively investigated owing to its unique band structure with a large band gap, degenerate valleys and non-zero Berry curvature. However, experimental studies of metastable 1T polytypes have been a challenge for a long time, and elect… ▽ More Transition-metal dichalcogenides open novel opportunities for the exploration of exciting new physics and devices. As a representative system, 2H-MoS$_2$ has been extensively investigated owing to its unique band structure with a large band gap, degenerate valleys and non-zero Berry curvature. However, experimental studies of metastable 1T polytypes have been a challenge for a long time, and electronic properties are obscure due to the inaccessibility of single phase without the coexistence of 1T', 1T'' and 1T''' lattice structures, which hinder the broad applications of MoS$_2$ in future nanodevices and optoelectronic devices. Using ${K_x(H_2O)_yMoS_2}$ as the precursor, we have successfully obtained high-quality layered crystals of the metastable 1T'''-MoS$_2$ with $\sqrt{3}a\times\sqrt{3}a$ superstructure and metastable 1T'-MoS$_2$ with a$\times$2a superstructure, as evidenced by structural characterizations through scanning tunneling microscopy, Raman spectroscopy and X-ray diffraction. It is found that the metastable 1T'-MoS$_2$ is a superconductor with onset transition temperature (${T_c}$) of 4.2 K, while the metastable 1 T'''-MoS$_2$ shows either superconductivity with Tc of 5.3 K or insulating behavior, which strongly depends on the synthesis procedure. Both of the metastable polytypes of MoS$_2$ crystals can be transformed to the stable 2H phase with mild annealing at about 70 $^{\circ}$C in He atmosphere. These findings provide pivotal information on the atomic configurations and physical properties of 1T polytypes of MoS$_2$. △ Less

Submitted 24 September, 2018; originally announced September 2018.

Comments: 17 pages, 4 figures

Journal ref: Phys. Rev. B 98, 184513 (2018)

Electric-field controlled superconductor-ferromagnetic insulator transition

Authors: L. K. Ma, B. Lei, N. Z. Wang, K. S. Yang, D. Y. Liu, F. B. Meng, C. Shang, Z. L. Sun, J. H. Cui, C. S. Zhu, T. Wu, Z. Sun, L. J. Zou, X. H. Chen

Abstract: How to control collectively ordered electronic states is a core interest of condensed matter physics. We report an electric field controlled reversible transition from superconductor to ferromagnetic insulator in (Li,Fe)OHFeSe thin flake using solid ion conductor as the gate dielectric. By driving Li ions into and out of the (Li,Fe)OHFeSe thin flake with electric field, we obtained a dome-shaped s… ▽ More How to control collectively ordered electronic states is a core interest of condensed matter physics. We report an electric field controlled reversible transition from superconductor to ferromagnetic insulator in (Li,Fe)OHFeSe thin flake using solid ion conductor as the gate dielectric. By driving Li ions into and out of the (Li,Fe)OHFeSe thin flake with electric field, we obtained a dome-shaped superconducting region with optimal Tc ~ 43 K, which is separated by a quantum critical point from ferromagnetically insulating phase. The ferromagnetism arises from the long range order of the interstitial Fe ions expelled from the (Li,Fe)OH layers by Li injection. The device can reversibly manipulate collectively ordered electronic states and stabilize new metastable structures by electric field. △ Less

Submitted 18 August, 2018; originally announced August 2018.

Comments: 21 pages, 4 figures, supplementary information is not included

Chiral Landau levels in Weyl semimetal NbAs with multiple topological carriers

Authors: Xiang Yuan, Zhongbo Yan, Chaoyu Song, Mengyao Zhang, Zhilin Li, Cheng Zhang, Yanwen Liu, Weiyi Wang, Minhao Zhao, Zehao Lin, Tian Xie, Jonathan Ludwig, Yuxuan Jiang, Xiaoxing Zhang, Cui Shang, Zefang Ye, Jiaxiang Wang, Feng Chen, Zhengcai Xia, Dmitry Smirnov, Xiaolong Chen, Zhong Wang, Hugen Yan, Faxian Xiu

Abstract: Recently, Weyl semimetals have been experimentally discovered in both inversion-symmetry-breaking and time-reversal-symmetry-breaking crystals. The non-trivial topology in Weyl semimetals can manifest itself with exotic phenomena which have been extensively investigated by photoemission and transport measurements. Despite the numerous experimental efforts on Fermi arcs and chiral anomaly, the exis… ▽ More Recently, Weyl semimetals have been experimentally discovered in both inversion-symmetry-breaking and time-reversal-symmetry-breaking crystals. The non-trivial topology in Weyl semimetals can manifest itself with exotic phenomena which have been extensively investigated by photoemission and transport measurements. Despite the numerous experimental efforts on Fermi arcs and chiral anomaly, the existence of unconventional zeroth Landau levels, as a unique hallmark of Weyl fermions which is highly related to chiral anomaly, remains elusive owing to the stringent experimental requirements. Here, we report the magneto-optical study of Landau quantization in Weyl semimetal NbAs. High magnetic fields drive the system towards the quantum limit which leads to the observation of zeroth chiral Landau levels in two inequivalent Weyl nodes. As compared to other Landau levels, the zeroth chiral Landau level exhibits a distinct linear dispersion in z momentum direction and allows the optical transitions without the limitation of zero z momentum or square root of magnetic field evolution. The magnetic field dependence of the zeroth Landau levels further verifies the predicted particle-hole asymmetry of the Weyl cones. Meanwhile, the optical transitions from the normal Landau levels exhibit the coexistence of multiple carriers including an unexpected massive Dirac fermion, pointing to a more complex topological nature in inversion-symmetry-breaking Weyl semimetals. Our results provide insights into the Landau quantization of Weyl fermions and demonstrate an effective tool for studying complex topological systems. △ Less

Submitted 10 May, 2018; originally announced May 2018.

Journal ref: Nature Communications 9,1854 (2018)

Weyl solitons in three-dimensional optical lattices

Authors: Ce Shang, Yuanlin Zheng, Boris A. Malomed

Abstract: Weyl fermions are massless chiral quasiparticles existing in materials known as Weyl semimetals. Topological surface states, associated with the unusual electronic structure in the Weyl semimetals, have been recently demonstrated in linear systems. Ultracold atomic gases, featuring laser-assisted tunneling in three-dimensional optical lattices, can be used for the emulation of Weyl semimetals, inc… ▽ More Weyl fermions are massless chiral quasiparticles existing in materials known as Weyl semimetals. Topological surface states, associated with the unusual electronic structure in the Weyl semimetals, have been recently demonstrated in linear systems. Ultracold atomic gases, featuring laser-assisted tunneling in three-dimensional optical lattices, can be used for the emulation of Weyl semimetals, including nonlinear effects induced by the collisional nonlinearity of atomic Bose-Einstein condensates. We demonstrate that this setting gives rise to topological states in the form of Weyl solitons at the surface of the underlying optical lattice. These nonlinear modes, being exceptionally robust, bifurcate from linear states for a given quasi-momentum. The Weyl solitons may be used to design an efficient control scheme for topologically-protected unidirectional propagation of excitations in light-matter-interaction physics. After the recently introduced Majorana and Dirac solitons, the Weyl solitons proposed in this work constitute the third (and the last) member in this family of topological solitons. △ Less

Submitted 3 April, 2018; originally announced April 2018.

Comments: Physical Review A, to be published

Magnetic-field enhanced high-thermoelectric performance in topological Dirac semimetal Cd$_3$As$_2$ crystal

Authors: H. H. Wang, X. G. Luo, W. W. Chen, N. Z. Wang, B. Lei, F. B. Meng, C. Shang, L. K. Ma, T. Wu, X. Dai, Z. F. Wang, X. H. Chen

Abstract: Thermoelectric materials can be used to convert heat to electric power through the Seebeck effect. We study magneto-thermoelectric figure of merit (ZT) in three-dimensional Dirac semimetal Cd$_3$As$_2$ crystal. It is found that enhancement of power factor and reduction of thermal conductivity can be realized at the same time through magnetic field although magnetoresistivity is greatly increased.… ▽ More Thermoelectric materials can be used to convert heat to electric power through the Seebeck effect. We study magneto-thermoelectric figure of merit (ZT) in three-dimensional Dirac semimetal Cd$_3$As$_2$ crystal. It is found that enhancement of power factor and reduction of thermal conductivity can be realized at the same time through magnetic field although magnetoresistivity is greatly increased. ZT can be highly enhanced from 0.17 to 1.1 by more than six times around 350 K under a perpendicular magnetic field of 7 Tesla. The huge enhancement of ZT by magnetic field arises from the linear Dirac band with large Fermi velocity and the large electric thermal conductivity in Cd$_3$As$_2$. Our work paves a new way to greatly enhance the thermoelectric performance in the quantum topological materials. △ Less

Submitted 21 February, 2018; originally announced February 2018.

Comments: 25 pages, 4 figures, supplementary materials file is not included

Bulk Rotational Symmetry Breaking in Kondo Insulator SmB6

Authors: Z. Xiang, B. Lawson, T. Asaba, C. Tinsman, Lu Chen, C. Shang, X. H. Chen, Lu Li

Abstract: Kondo insulator samarium hexaboride (SmB6) has been intensely studied in recent years as a potential candidate of a strongly correlated topological insulator. One of the most exciting phenomena observed in SmB6 is the clear quantum oscillations appearing in magnetic torque at a low temperature despite the insulating behavior in resistance. These quantum oscillations show multiple frequencies and v… ▽ More Kondo insulator samarium hexaboride (SmB6) has been intensely studied in recent years as a potential candidate of a strongly correlated topological insulator. One of the most exciting phenomena observed in SmB6 is the clear quantum oscillations appearing in magnetic torque at a low temperature despite the insulating behavior in resistance. These quantum oscillations show multiple frequencies and varied effective masses. The origin of quantum oscillation is, however, still under debate with evidence of both two-dimensional Fermi surfaces and three-dimensional Fermi surfaces. Here, we carry out angle-resolved torque magnetometry measurements in a magnetic field up to 45 T and a temperature range down to 40 mK. With the magnetic field rotated in the (010) plane, the quantum oscillation frequency of the strongest oscillation branch shows a four-fold rotational symmetry. However, in the angular dependence of the amplitude of the same branch, this four-fold symmetry is broken and, instead, a twofold symmetry shows up, which is consistent with the prediction of a two-dimensional Lifshitz-Kosevich model. No deviation of Lifshitz-Kosevich behavior is observed down to 40 mK. Our results suggest the existence of multiple light-mass surface states in SmB6, with their mobility significantly depending on the surface disorder level. △ Less

Submitted 24 October, 2017; originally announced October 2017.

Comments: 15 pages, 9 figures

Journal ref: Physical Review X 7, 031054 (2017)

Intrinsic features of an ideal glass

Authors: D. Y. Sun, C. Shang, Z. P. Liu, X. G. Gong

Abstract: In order to understand the long-standing problem of the nature of glass states, we performed intensive simulations on the thermodynamic properties and potential energy surface of an ideal glass. We found that the atoms of an ideal glass manifest cooperative diffusion, and show clearly different behavior from the liquid state. By determining the potential energy surface, we demonstrated that the gl… ▽ More In order to understand the long-standing problem of the nature of glass states, we performed intensive simulations on the thermodynamic properties and potential energy surface of an ideal glass. We found that the atoms of an ideal glass manifest cooperative diffusion, and show clearly different behavior from the liquid state. By determining the potential energy surface, we demonstrated that the glass state has a flat potential landscape, which is the critical intrinsic feature of ideal glasses. When this potential region is accessible through any thermal or kinetic process, the glass state can be formed and a glass transition will occur, regardless of any special structural character. With this picture, the glass transition can be interpreted by the emergence of configurational entropies, as a consequence of flat potential landscapes. △ Less

Submitted 22 January, 2017; originally announced January 2017.

Journal ref: Chinese Physics Letters 2017, 34, 026402

Tuning electronic properties of FeSe$_{0.5}$Te$_{0.5}$ thin flakes by a novel field effect transistor

Authors: C. S. Zhu, J. H. Cui, B. Lei, N. Z. Wang, C. Shang, F. B. Meng, L. K. Ma, X. G. Luo, T. Wu, Z. Sun, X. H. Chen

Abstract: Using a field-effect transistor (FET) configuration with solid Li-ion conductor (SIC) as gate dielectric, we have successfully tuned carrier density in FeSe$_{0.5}$Te$_{0.5}$ thin flakes, and the electronic phase diagram has been mapped out. It is found that electron doping controlled by SIC-FET leads to a suppression of the superconducting phase, and eventually gives rise to an insulating state i… ▽ More Using a field-effect transistor (FET) configuration with solid Li-ion conductor (SIC) as gate dielectric, we have successfully tuned carrier density in FeSe$_{0.5}$Te$_{0.5}$ thin flakes, and the electronic phase diagram has been mapped out. It is found that electron doping controlled by SIC-FET leads to a suppression of the superconducting phase, and eventually gives rise to an insulating state in FeSe$_{0.5}$Te$_{0.5}$. During the gating process, the (001) peak in XRD patterns stays at the same position and no new diffraction peak emerges, indicating no evident Li$^+$ ions intercalation into the FeSe$_{0.5}$Te$_{0.5}$. It indicates that a systematic change of electronic properties in FeSe$_{0.5}$Te$_{0.5}$ arises from the electrostatic doping induced by the accumulation of Li$^+$ ions at the interface between FeSe$_{0.5}$Te$_{0.5}$ and solid ion conductor in the devices. It is striking that these findings are drastically different from the observation in FeSe thin flakes using the same SIC-FET, in which $T_c$ is enhanced from 8 K to larger than 40 K, then the system goes into an insulating phase accompanied by structural transitions. △ Less

Submitted 21 January, 2017; originally announced January 2017.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 95, 174513 (2017)

Tuning phase transitions of FeSe thin flakes by field effect transistor with solid ion conductor as gate dielectric

Authors: B. Lei, N. Z. Wang, C. Shang, F. B. Meng, L. K. Ma, X. G. Luo, T. Wu, Z. Sun, Y. Wang, Z. Jiang, B. H. Mao, Z. Liu, Y. J. Yu, Y. B. Zhang, X. H. Chen

Abstract: We develop a novel field effect transistor (FET) device using solid ion conductor (SIC) as a gate dielectric, and we can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes, and consequently control the material properties and its phase transitions. A dome-shaped superconducting phase diagram was mapped out with increasing Li content, with $T_c$ $\sim$ 46.6… ▽ More We develop a novel field effect transistor (FET) device using solid ion conductor (SIC) as a gate dielectric, and we can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes, and consequently control the material properties and its phase transitions. A dome-shaped superconducting phase diagram was mapped out with increasing Li content, with $T_c$ $\sim$ 46.6 K for the optimal doping, and an insulating phase was reached at the extremely overdoped regime. Our study suggests that, using solid ion conductor as a gate dielectric, the SIC-FET device can achieve much higher carrier doping in the bulk, and suit many surface sensitive experimental probes, and can stabilize novel structural phases that are inaccessible in ordinary conditions. △ Less

Submitted 25 September, 2016; originally announced September 2016.

Comments: 6 pages, 4 figure. Supplementary information is not included

Evolution of high-temperature superconductivity from low-Tc phase tuned by carrier concentration in FeSe thin flakes

Authors: B. Lei, J. H. Cui, Z. J. Xiang, C. Shang, N. Z. Wang, G. J. Ye, X. G. Luo, T. Wu, Z. Sun, X. H. Chen

Abstract: In contrast to bulk FeSe superconductor, heavily electron-doped FeSe-derived superconductors show relatively high Tc without hole Fermi surfaces and nodal superconducting gap structure, which pose great challenges on pairing theories in the iron-based superconductors. In the heavily electron-doped FeSe-based superconductors, the dominant factors and the exact working mechanism that is responsible… ▽ More In contrast to bulk FeSe superconductor, heavily electron-doped FeSe-derived superconductors show relatively high Tc without hole Fermi surfaces and nodal superconducting gap structure, which pose great challenges on pairing theories in the iron-based superconductors. In the heavily electron-doped FeSe-based superconductors, the dominant factors and the exact working mechanism that is responsible for the high Tc need to be clarified. In particular, a clean control of carrier concentration remains to be a challenge for revealing how superconductivity and Fermi surface topology evolves with carrier concentration in bulk FeSe. Here, we report the evolution of superconductivity in the FeSe thin flake with systematically regulated carrier concentrations by liquid-gating technique. High-temperature superconductivity at 48 K can be achieved only with electron doping tuned by gate voltage in FeSe thin flake with Tc less than 10 K. This is the first time to achieve such a high temperature superconductivity in FeSe without either epitaxial interface or external pressure. It definitely proves that the simple electron-doping process is able to induce high-temperature superconductivity with Tc as high as 48 K in bulk FeSe. Intriguingly, our data also indicates that the superconductivity is suddenly changed from low-Tc phase to high-Tc phase with a Lifshitz transition at certain carrier concentration. These results help us to build a unified picture to understand the high-temperature superconductivity among all FeSe-derived superconductors and shed light on further pursuit of higher Tc in these materials. △ Less

Submitted 2 September, 2015; originally announced September 2015.

Comments: 15 pages, 4 figures

Journal ref: Phys. Rev. Lett. 116, 077002 (2016)

Pressure-induced Lifshitz transition in black phosphorus

Authors: Z. J. Xiang, G. J. Ye, C. Shang, B. Lei, N. Z. Wang, K. S. Yang, D. Y. Liu, F. B. Meng, X. G. Luo, L. J. Zou, Z. Sun, Y. B. Zhang, X. H. Chen

Abstract: In a semimetal, both electron and hole carriers contribute to the density of states at the Fermi level. The small band overlaps and multi-band effects give rise to many novel electronic properties, such as relativistic Dirac fermions with linear dispersion, titanic magnetoresistance and unconventional superconductivity. Black phosphorus has recently emerged as an exceptional semiconductor with hig… ▽ More In a semimetal, both electron and hole carriers contribute to the density of states at the Fermi level. The small band overlaps and multi-band effects give rise to many novel electronic properties, such as relativistic Dirac fermions with linear dispersion, titanic magnetoresistance and unconventional superconductivity. Black phosphorus has recently emerged as an exceptional semiconductor with high carrier mobility and a direct, tunable bandgap. Of particular importance is the search for exotic electronic states in black phosphorus, which may amplify the material's potential beyond semiconductor devices. Here we show that a moderate hydrostatic pressure effectively suppresses the band gap and induces a Lifshitz transition from semiconductor to semimetal in black phosphorus; a colossal magnetoresistance is observed in the semimetallic phase. Quantum oscillations in high magnetic field reveal the complex Fermi surface topology of the semimetallic black phosphorus. In particular, a Dirac-like fermion emerges at around 1.2 GPa, which is continuously tuned by external pressure. The observed semi-metallic behavior greatly enriches black phosphorus's material property, and sets the stage for the exploration of novel electronic states in this material. Moreover, these interesting behaviors make phosphorene a good candidate for the realization of a new two-dimensional relativistic electron system, other than graphene. △ Less

Submitted 4 December, 2015; v1 submitted 1 April, 2015; originally announced April 2015.

Comments: 5 pages, 4 figures in main text

Gate-tuned Superconductor-Insulator transition in (Li,Fe)OHFeSe

Authors: B. Lei, Z. J. Xiang, X. F. Lu, N. Z. Wang, J. R. Chang, C. Shang, X. G. Luo, T. Wu, Z. Sun, X. H. Chen

Abstract: The antiferromagnetic(AFM) insulator-superconductor transition has been always a center of interest in the underlying physics of unconventional superconductors. The quantum phase transition between Mott insulator with AFM and superconductor can be induced by doping charge carriers in high-Tc cuprate superconductors. For the best characterized organic superconductors of k-(BEDT-TTF)2X (X=anion), a… ▽ More The antiferromagnetic(AFM) insulator-superconductor transition has been always a center of interest in the underlying physics of unconventional superconductors. The quantum phase transition between Mott insulator with AFM and superconductor can be induced by doping charge carriers in high-Tc cuprate superconductors. For the best characterized organic superconductors of k-(BEDT-TTF)2X (X=anion), a first order transition between AFM insulator and superconductor can be tuned by applied external pressure or chemical pressure. Also, the superconducting state can be directly developed from AFM insulator by application of pressure in Cs3C60. The resemblance of these phase diagrams hints a universal mechanism governing the unconventional superconductivity in close proximity to AFM insulators. However, the superconductivity in iron-based high-Tc superconductors evolves from an AFM bad metal by doping charge carriers, and no superconductor-insulator transition has been observed so far. Here, we report a first-order transition from superconductor to insulator with a strong charge doping induced by ionic gating in the thin flakes of single crystal (Li,Fe)OHFeSe. The Tc is continuously enhanced with electron doping by ionic gating up to a maximum Tc of 43 K, and a striking superconductor-insulator transition occurs just at the verge of optimal doping with highest Tc. A novel phase diagram of temperature-gating voltage with the superconductor-insulator transition is mapped out, indicating that the superconductor -insulator transition is a common feature for unconventional superconductivity. These results help to uncover the underlying physics of iron-based superconductivity as well as the universal mechanism of high-Tc superconductivity. Our finding also suggests that the gate-controlled strong charge doping makes it possible to explore novel states of matter in a way beyond traditional methods. △ Less

Submitted 9 March, 2015; originally announced March 2015.

Comments: 20 pages, 4 figures, supplementary information is not uploaded

Journal ref: Phys. Rev. B 93, 060501 (2016)

Magnetoresistance evidence on surface state and field-dependent bulk gap in Kondo insulator SmB6

Authors: F. Chen, C. Shang, Z. Jin, D. Zhao, Y. P. Wu, Z. J. Xiang, Z. C. Xia, A. F. Wang, X. G. Luo, T. Wu, X. H. Chen

Abstract: Recently, the resistance saturation at low temperature in Kondo insulator SmB6, a long-standing puzzle in condensed matter physics, was proposed to originate from topological surface state. Here,we systematically studied the magnetoresistance of SmB6 at low temperature up to 55 Tesla. Both temperature- and angular-dependent magnetoresistances show a similar crossover behavior below 5 K. Furthermor… ▽ More Recently, the resistance saturation at low temperature in Kondo insulator SmB6, a long-standing puzzle in condensed matter physics, was proposed to originate from topological surface state. Here,we systematically studied the magnetoresistance of SmB6 at low temperature up to 55 Tesla. Both temperature- and angular-dependent magnetoresistances show a similar crossover behavior below 5 K. Furthermore, the angular-dependent magnetoresistance on different crystal face confirms a two-dimensional surface state as the origin of magnetoresistances crossover below 5K. Based on two-channels model consisting of both surface and bulk states, the field-dependence of bulk gap with critical magnetic field (Hc) of 196 T is extracted from our temperature-dependent resistance under different magnetic fields. Our results give a consistent picture to understand the low-temperature transport behavior in SmB6, consistent with topological Kondo insulator scenario. △ Less

Submitted 27 March, 2015; v1 submitted 10 September, 2013; originally announced September 2013.

Comments: 5 pages, 5 figures

Impurity and strain effects on the magnetotransport of La1.85Sr0.15Cu(1-y)Zn(y)O4 films

Authors: Marta Z. Cieplak, A. Malinowski, K. Karpinska, S. Guha, A. Krickser, B. Kim Q. Wu, C. H. Shang, M. Berkowski, P. Lindenfeld

Abstract: The influence of zinc doping and strain related effects on the normal state transport properties(the resistivity, the Hall angle and the orbital magneto- resistance(OMR) is studied in a series of La1.85Sr0.15Cu(1-y)Zn(y)O4 films with values of y between 0 and 0.12 and various degrees of strain induced by the mismatch between the films and the substrate. The zinc doping affects only the constant… ▽ More The influence of zinc doping and strain related effects on the normal state transport properties(the resistivity, the Hall angle and the orbital magneto- resistance(OMR) is studied in a series of La1.85Sr0.15Cu(1-y)Zn(y)O4 films with values of y between 0 and 0.12 and various degrees of strain induced by the mismatch between the films and the substrate. The zinc doping affects only the constant term in the temperature dependence of cotangent theta but the strain affects both the slope and the constant term, while their ratio remains constant.OMR is decreased by zinc doping but is unaffected by strain. The ratio delta rho/(rho*tan^2 theta) is T-independent but decreases with impurity doping. These results put strong constraints on theories of the normal state of high- temperature superconductors. △ Less

Submitted 23 August, 2001; originally announced August 2001.

Magnetotransport in the Normal State of La1.85Sr0.15Cu(1-y)Zn(y)O4 Films

Authors: A. Malinowski, Marta Z. Cieplak, S. Guha, Q. Wu, B. Kim, A. Krickser, A. Perali, K. Karpinska, M. Berkowski, C. H. Shang, P. Lindenfeld

Abstract: We have studied the magnetotransport properties in the normal state for a series of La1.85Sr0.15Cu(1-y)Zn(y)O4 films with values of y, between 0 and 0.12. A variable degree of compressive or tensile strain results from the lattice mismatch between the substrate and the film, and affects the transport properties differently from the influence of the zinc impurities. In particular, the orbital mag… ▽ More We have studied the magnetotransport properties in the normal state for a series of La1.85Sr0.15Cu(1-y)Zn(y)O4 films with values of y, between 0 and 0.12. A variable degree of compressive or tensile strain results from the lattice mismatch between the substrate and the film, and affects the transport properties differently from the influence of the zinc impurities. In particular, the orbital magnetoresistance (OMR) varies with y but is strain-independent. The relations for the resistivity and the Hall angle and the proportionality between the OMR and tan^2 theta are followed about 70 K. We have been able to separate the strain and impurity effects by rewriting the above relations, where each term is strain-independent and depends on y only. We also find that changes in the lattice constants give rise to closely the same fractional changes in other terms of the equation.The OMR is more strongly supressed by the addition of impurities than tan^2 theta. We conclude that the relaxation ratethat governs Hall effect is not the same as for the magnetoresistance. We also suggest a correspondence between the transport properties and the opening of the pseudogap at a temperature which changes when the La-sr ratio changes, but does not change with the addition of the zinc impurities. △ Less

Submitted 23 August, 2001; originally announced August 2001.