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Resonant two-laser spin-state spectroscopy of a negatively charged quantum dot-microcavity system with a cold permanent magnet
Authors:
P. Steindl,
T. van der Ent,
H. van der Meer,
J. A. Frey,
J. Norman,
J. E. Bowers,
D. Bouwmeester,
W. Löffler
Abstract:
A high-efficiency spin-photon interface is an essential piece of quantum hardware necessary for various quantum technologies. Self-assembled InGaAs quantum dots have excellent optical properties, if embedded into an optical micro-cavity they can show near-deterministic spin-photon entanglement and spin readout, but an external magnetic field is required to address the individual spin states, which…
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A high-efficiency spin-photon interface is an essential piece of quantum hardware necessary for various quantum technologies. Self-assembled InGaAs quantum dots have excellent optical properties, if embedded into an optical micro-cavity they can show near-deterministic spin-photon entanglement and spin readout, but an external magnetic field is required to address the individual spin states, which usually is done using a superconducting magnet. Here, we show a compact cryogenically compatible SmCo magnet design that delivers 475 mT in-plane Voigt geometry magnetic field at 5 K, which is suitable to lift the energy degeneracy of the electron spin states and trion transitions of a single InGaAs quantum dot. This quantum dot is embedded in a birefringent high-finesse optical micro-cavity which enables efficient collection of single photons emitted by the quantum dot. We demonstrate spin-state manipulation by addressing the trion transitions with a single and two laser fields. The experimental data agrees well to our model which covers single- and two-laser cross-polarized resonance fluorescence, Purcell enhancement in a birefringent cavity, and variation of the laser powers.
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Submitted 5 March, 2023;
originally announced March 2023.
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Dislocation-induced structural and luminescence degradation in InAs quantum dot emitters on silicon
Authors:
Eamonn T. Hughes,
Gunnar Kusch,
Jennifer Selvidge,
Bastien Bonef,
Justin Norman,
Chen Shang,
John E. Bowers,
Rachel A. Oliver,
Kunal Mukherjee
Abstract:
We probe the extent to which dislocations reduce carrier lifetimes and alter luminescence and growth morphology in InAs quantum dots (QD) grown on silicon. These heterostructures are key ingredients to achieving a highly reliable monolithically integrated light source on silicon necessary for photonic integrated circuits. We find up to 20-30% shorter carrier lifetimes at spatially resolved individ…
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We probe the extent to which dislocations reduce carrier lifetimes and alter luminescence and growth morphology in InAs quantum dots (QD) grown on silicon. These heterostructures are key ingredients to achieving a highly reliable monolithically integrated light source on silicon necessary for photonic integrated circuits. We find up to 20-30% shorter carrier lifetimes at spatially resolved individual dislocations from both the QD ground and excited states at room temperature using time-resolved cathodoluminescence spectroscopy. These lifetimes are consistent with differences in the intensity measured under steady-state excitation suggesting that trap-assisted recombination limits the minority carrier lifetime, even away from dislocations. Our techniques also reveal the dramatic growth of misfit dislocations in these structures under carrier injection fueled by recombination-enhanced dislocation glide and III-V/Si residual strain. Beyond these direct effects of increased nonradiative recombination, we find the long-range strain field of misfit dislocations deeper in the defect filter layers employed during III-V/Si growth alter the QD growth environment and introduce a crosshatch-like variation in the QD emission color and intensity when the filter layer is positioned close to the QD emitter layer. Sessile threading dislocations generate even more egregious hillock defects that also reduce emission intensities by altering layer thicknesses, as measured by transmission electron microscopy and atom probe tomography. Our work presents a more complete picture of the impacts of dislocations relevant for the development of light sources for scalable silicon photonic integrated circuits.
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Submitted 9 January, 2023;
originally announced January 2023.
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Attractive and repulsive dipolar interaction in bilayers of indirect excitons
Authors:
Darius Choksy,
Chao Xu,
Michael Fogler,
Leonid Butov,
Justin Norman,
Arthur Gossard
Abstract:
We explore attractive dipolar interaction in indirect excitons (IXs). For one layer of IXs in a single pair of coupled quantum wells (CQW), the out-of-plane IX electric dipoles lead to repulsive dipolar interaction between IXs. The attractive dipolar interaction between IXs is realized in a 2-CQW heterostructure with two IX layers in two separated CQW pairs. We found both in experimental measureme…
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We explore attractive dipolar interaction in indirect excitons (IXs). For one layer of IXs in a single pair of coupled quantum wells (CQW), the out-of-plane IX electric dipoles lead to repulsive dipolar interaction between IXs. The attractive dipolar interaction between IXs is realized in a 2-CQW heterostructure with two IX layers in two separated CQW pairs. We found both in experimental measurements and theoretical simulations that increasing density of IXs in one layer causes a monotonic energy reduction for IXs in the other layer. We also found an in-plane shift of a cloud of IXs in one layer towards a cloud of IXs in the other layer. This behaviour is qualitatively consistent with attractive dipolar interaction. The measured IX energy reduction and IX cloud shift are higher than the values given by the correlated liquid theory.
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Submitted 11 November, 2020;
originally announced November 2020.
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Defect filtering for thermal expansion induced dislocations in III-V lasers on silicon
Authors:
Jennifer Selvidge,
Justin Norman,
Eamonn T. Hughes,
Chen Shang,
Daehwan Jung,
Aidan A. Taylor,
MJ Kennedy,
Robert Herrick,
John E. Bowers,
Kunal Mukherjee
Abstract:
Epitaxially integrated III-V semiconductor lasers for silicon photonics have the potential to dramatically transform information networks, but currently, dislocations limit performance and reliability even in defect tolerant InAs quantum dot (QD) based lasers. Despite being below critical thickness, QD layers in these devices contain previously unexplained misfit dislocations, which facilitate non…
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Epitaxially integrated III-V semiconductor lasers for silicon photonics have the potential to dramatically transform information networks, but currently, dislocations limit performance and reliability even in defect tolerant InAs quantum dot (QD) based lasers. Despite being below critical thickness, QD layers in these devices contain previously unexplained misfit dislocations, which facilitate non-radiative recombination. We demonstrate here that these misfit dislocations form during post-growth cooldown due to the combined effects of (1) thermal-expansion mismatch between the III-V layers and silicon and (2) precipitate and alloy hardening in the active region. By incorporating an additional sub-critical thickness, indium-alloyed misfit dislocation trapping layer, we leverage these mechanical hardening effects to our advantage, successfully displacing 95% of misfit dislocations from the QD layer in model structures. Unlike conventional dislocation mitigation strategies, the trapping layer reduces neither the number of threading dislocations nor the number of misfit dislocations. It simply shifts the position of misfit dislocations away from the QD layer, reducing the defects' impact on luminescence. In full lasers, adding a misfit dislocation trapping layer both above and below the QD active region displaces misfit dislocations and substantially improves performance: we measure a twofold reduction in lasing threshold currents and a greater than threefold increase in output power. Our results suggest that devices employing both traditional threading dislocation reduction techniques and optimized misfit dislocation trapping layers may finally lead to fully integrated, commercially viable silicon-based photonic integrated circuits.
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Submitted 4 August, 2020; v1 submitted 12 May, 2020;
originally announced May 2020.
