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Beyond Walker Breakdown through the Resonant Dissipation: Dramatic Enhancement of Magnetic Domain Wall Velocity via Resonant Excitation of Standing Wave Modes of Domain Wall Structure
Authors:
Ganghwi Kim,
Dae-Han Jung,
Hee-Sung Han,
Ki-Suk Lee
Abstract:
The dynamic behaviors of magnetic domain walls have significant implications for developing advanced spintronic devices. In this study, we investigate the intriguing resonance phenomenon within the magnetic domain wall structure and its profound influence on dynamic motion, focusing on the dissipation mechanism. By applying a static external magnetic field, we observe a remarkable amplification of…
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The dynamic behaviors of magnetic domain walls have significant implications for developing advanced spintronic devices. In this study, we investigate the intriguing resonance phenomenon within the magnetic domain wall structure and its profound influence on dynamic motion, focusing on the dissipation mechanism. By applying a static external magnetic field, we observe a remarkable amplification of domain wall velocity, surpassing the limitations of the conventional one-dimensional model. To quantify this enhancement, we introduce a novel parameter, the distortion variation rate, which captures the rapid and pronounced changes occurring within the domain wall structure. Through comprehensive micromagnetic simulations, we establish a robust relationship between speed and distortion variation rate, thereby validating our theoretical framework. Our findings provide crucial insights into the underlying mechanisms governing domain wall dynamics while paving the way for developing and optimizing next-generation spintronic devices boasting unparalleled speed and efficiency.
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Submitted 25 July, 2023; v1 submitted 24 May, 2023;
originally announced May 2023.
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Targeted Writing and Deleting of Magnetic Skyrmions in Two-Terminal Nanowire Devices
Authors:
Soong-Geun Je,
Dickson Thian,
Xiaoye Chen,
Lisen Huang,
Dae-Han Jung,
Weilun Chao,
Ki-Suk Lee,
Jung-Il Hong,
Anjan Soumyanarayanan,
Mi-Young Im
Abstract:
Controllable writing and deleting of nanoscale magnetic skyrmions are key requirements for their use as information carriers for next-generation memory and computing technologies. While several schemes have been proposed, they require complex fabrication techniques or precisely tailored electrical inputs, which limits their long-term scalability. Here we demonstrate an alternative approach for wri…
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Controllable writing and deleting of nanoscale magnetic skyrmions are key requirements for their use as information carriers for next-generation memory and computing technologies. While several schemes have been proposed, they require complex fabrication techniques or precisely tailored electrical inputs, which limits their long-term scalability. Here we demonstrate an alternative approach for writing and deleting skyrmions using conventional electrical pulses within a simple, two-terminal wire geometry. X-ray microscopy experiments and micromagnetic simulations establish the observed skyrmion creation and annihilation as arising from Joule heating and Oersted field effects of the current pulses, respectively. The unique characteristics of these writing and deleting schemes, such as spatial and temporal selectivity, together with the simplicity of the 2-terminal device architecture, provide a flexible and scalable route to the viable applications of skyrmions.
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Submitted 26 March, 2022;
originally announced March 2022.
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Monolayer Structure of Supramolecular Antagonistic Salt Aggregates
Authors:
David Jung,
Jens Harting,
Marcello Sega
Abstract:
The speculated presence of monomolecular lamellae of antagonistic salts in oil-water mixtures has left several open questions besides their hypothetical existence, including their microscopic structure and stabilization mechanism. Here, we simulate the spontaneous formation of supramolecular aggregates of the antagonistic salt sodium tetraphenylborate (NaBPh$_4$) in water and 3-methylpyridine (3-M…
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The speculated presence of monomolecular lamellae of antagonistic salts in oil-water mixtures has left several open questions besides their hypothetical existence, including their microscopic structure and stabilization mechanism. Here, we simulate the spontaneous formation of supramolecular aggregates of the antagonistic salt sodium tetraphenylborate (NaBPh$_4$) in water and 3-methylpyridine (3-MP) at the atomistic level. We show that, indeed, the lamellae are formed by a monomolecular layer of the anion, enveloped by 3-MP and hydrated sodium counterions. To understand which thermodynamic forces drive the aggregation, we compare the full-atomistic model with a simplified one for the salt and show that the strong hydrophobic effect granted by the large excluded volume of the anion, together with electrostatic repulsion, suffice to explain the stability of the monomolecular lamellae.
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Submitted 18 March, 2021;
originally announced March 2021.
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Hydrodynamic simulations of sedimenting dilute particle suspensions under repulsive DLVO interactions
Authors:
David Jung,
Maximilian Johannes Uttinger,
Paolo Malgaretti,
Wolfgang Peukert,
Johannes Walter,
Jens Harting
Abstract:
We present guidelines to estimate the effect of electrostatic repulsion in sedimenting dilute particle suspensions. Our results are based on combined Langevin dynamics and lattice Boltzmann simulations for a range of particle radii, Debye lengths and particle concentrations. They show a simple relationship between the slope $K$ of the concentration-dependent sedimentation velocity and the range…
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We present guidelines to estimate the effect of electrostatic repulsion in sedimenting dilute particle suspensions. Our results are based on combined Langevin dynamics and lattice Boltzmann simulations for a range of particle radii, Debye lengths and particle concentrations. They show a simple relationship between the slope $K$ of the concentration-dependent sedimentation velocity and the range $χ$ of the electrostatic repulsion normalized by the average particle-particle distance. When $χ\to 0$, the particles are too far away from each other to interact electrostatically and $K=6.55$ as predicted by the theory of Batchelor. As $χ$ increases, $K$ likewise increases as if the particle radius increased in proportion to $χ$ up to a maximum around $χ=0.4$. Over the range $χ=0.4-1$, $K$ relaxes exponentially to a concentration-dependent constant consistent with known results for ordered particle distributions. Meanwhile the radial distribution function transitions from a disordered gas-like to a liquid-like form. Power law fits to the concentration-dependent sedimentation velocity similarly yield a simple master curve for the exponent as a function of $χ$, with a step-like transition from 1 to 1/3 centered around $χ= 0.6$.
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Submitted 25 February, 2022; v1 submitted 14 August, 2020;
originally announced August 2020.
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Varying Electronic Coupling at Graphene-Copper Interfaces Probed with Raman Spectroscopy
Authors:
Jieun Choi,
Seonghyun Koo,
Myeongin Song,
Daeyool Jung,
Sungyool Choi,
Sunmin Ryu
Abstract:
As the synthesis of graphene on copper became one of the primary preparation methods for both fundamental research and industrial application, Raman spectra of graphene/Cu systems need to be quantitatively understood regarding how their interactions affect the electronic structure of graphene. Using multi-wavelength Raman spectroscopy, we investigated three types of graphene bound on Cu: graphene…
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As the synthesis of graphene on copper became one of the primary preparation methods for both fundamental research and industrial application, Raman spectra of graphene/Cu systems need to be quantitatively understood regarding how their interactions affect the electronic structure of graphene. Using multi-wavelength Raman spectroscopy, we investigated three types of graphene bound on Cu: graphene grown on Cu foils and Cu film/SiO2, and Cu-evaporated exfoliated graphene. 2D peak frequencies of the first two samples were ~17 cm-1 higher than expected for 1.96 eV excitation even when the effect of strain was considered. More notably, the upshift in 2D decreased with increasing excitation energy. Based on control experiments using Cu-evaporated graphene, we revealed that the spectral anomaly was induced by environment-dependent nonlinear dispersion in the electronic bands of graphene and determined the degree of the electronic modification. We also showed that the large upshifts of G and 2D peaks originating from differential thermal expansion of Cu could be significantly reduced by backing Cu films with dielectric substrates of insignificant thermal expansion. The quantitative analysis of electronic coupling between graphene and Cu presented in this study will be highly useful in characterizing as-grown graphene and possibly in other forms.
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Submitted 6 August, 2020;
originally announced August 2020.
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Defect filtering for thermal expansion induced dislocations in III-V lasers on silicon
Authors:
Jennifer Selvidge,
Justin Norman,
Eamonn T. Hughes,
Chen Shang,
Daehwan Jung,
Aidan A. Taylor,
MJ Kennedy,
Robert Herrick,
John E. Bowers,
Kunal Mukherjee
Abstract:
Epitaxially integrated III-V semiconductor lasers for silicon photonics have the potential to dramatically transform information networks, but currently, dislocations limit performance and reliability even in defect tolerant InAs quantum dot (QD) based lasers. Despite being below critical thickness, QD layers in these devices contain previously unexplained misfit dislocations, which facilitate non…
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Epitaxially integrated III-V semiconductor lasers for silicon photonics have the potential to dramatically transform information networks, but currently, dislocations limit performance and reliability even in defect tolerant InAs quantum dot (QD) based lasers. Despite being below critical thickness, QD layers in these devices contain previously unexplained misfit dislocations, which facilitate non-radiative recombination. We demonstrate here that these misfit dislocations form during post-growth cooldown due to the combined effects of (1) thermal-expansion mismatch between the III-V layers and silicon and (2) precipitate and alloy hardening in the active region. By incorporating an additional sub-critical thickness, indium-alloyed misfit dislocation trapping layer, we leverage these mechanical hardening effects to our advantage, successfully displacing 95% of misfit dislocations from the QD layer in model structures. Unlike conventional dislocation mitigation strategies, the trapping layer reduces neither the number of threading dislocations nor the number of misfit dislocations. It simply shifts the position of misfit dislocations away from the QD layer, reducing the defects' impact on luminescence. In full lasers, adding a misfit dislocation trapping layer both above and below the QD active region displaces misfit dislocations and substantially improves performance: we measure a twofold reduction in lasing threshold currents and a greater than threefold increase in output power. Our results suggest that devices employing both traditional threading dislocation reduction techniques and optimized misfit dislocation trapping layers may finally lead to fully integrated, commercially viable silicon-based photonic integrated circuits.
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Submitted 4 August, 2020; v1 submitted 12 May, 2020;
originally announced May 2020.
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Reduced thermal conductivity of epitaxial GaAs on Si due to symmetry-breaking biaxial strain
Authors:
Alejandro Vega-Flick,
Daehwan Jung,
Shengying Yue,
John E. Bowers,
Bolin Liao
Abstract:
Epitaxial growth of III-V semiconductors on Si is a promising route for silicon photonics. Threading dislocations and the residual thermal stress generated during growth are expected to affect the thermal conductivity of the III-V semiconductors, which is crucial for efficient heat dissipation from photonic devices built on this platform. In this work, we combine a non-contact laser-induced transi…
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Epitaxial growth of III-V semiconductors on Si is a promising route for silicon photonics. Threading dislocations and the residual thermal stress generated during growth are expected to affect the thermal conductivity of the III-V semiconductors, which is crucial for efficient heat dissipation from photonic devices built on this platform. In this work, we combine a non-contact laser-induced transient thermal grating technique with ab initio phonon simulations to investigate the in-plane thermal transport of epitaxial GaAs-based buffer layers on Si, employed in the fabrication of III-V quantum dot lasers. Surprisingly, we find a significant reduction of the in-plane thermal conductivity of GaAs, up to 19%, as a result of a small in-plane biaxial stress of 250 MPa. Using ab initio phonon calculations, we attribute this effect to the enhancement of phonon-phonon scattering caused by the in-plane biaxial stress, which breaks the cubic crystal symmetry of GaAs. Our results indicate the importance of eliminating the residual thermal stress in the epitaxial III-V layers on Si to avoid the reduction of thermal conductivity and facilitate heat dissipation. Additionally, our results showcase potential means of effectively controlling thermal conductivity of solids with external strain/stress.
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Submitted 10 January, 2019;
originally announced January 2019.
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How antagonistic salts cause nematic ordering and behave like diblock copolymers
Authors:
David Jung,
Nicolas Rivas,
Jens Harting
Abstract:
We present simulation results and an explanatory theory on how antagonistic salts affect the spinodal decomposition of binary fluid mixtures. We find that spinodal decomposition is arrested and complex structures form only when electrostatic ion-ion interactions are small. In this case fluid and ion concentrations couple and the charge field can be approximated as a polynomial function of the rela…
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We present simulation results and an explanatory theory on how antagonistic salts affect the spinodal decomposition of binary fluid mixtures. We find that spinodal decomposition is arrested and complex structures form only when electrostatic ion-ion interactions are small. In this case fluid and ion concentrations couple and the charge field can be approximated as a polynomial function of the relative fluid concentrations alone. When the solvation energy associated with transfering an ion from one fluid phase to the other is of the order of a few k_BT, the coupled fluid and charge fields evolve according to the Ohta-Kawasaki free energy functional. This allows us to accurately predict structure sizes and reduce the parameter space to two dimensionless numbers. The lamellar structures induced by the presence of antagonistic salt in our simulations exhibit a high degree of nematic ordering and the growth of ordered domains over time seems to follow a power law. This power law carries a time exponent proportional to the salt concentration. We reproduce and interpret neutron scattering data from previous experiments of similar systems. The dissolution of structures at high salt concentrations observed in these experiments agrees with our simulations and we explain it as the result of a vanishing surface tension due to electrostatic contributions. We conclude by presenting preliminary 3D results showing the same morphologies as predicted by the Ohta-Kawasaki model as a function of volume fraction and suggesting that our findings from 2D systems remain valid in 3D.
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Submitted 19 February, 2019; v1 submitted 14 December, 2018;
originally announced December 2018.
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Anderson Metal-Insulator Transitions With Classical Magnetic Impurities: Supplemental material
Authors:
Daniel Jung,
Keith Slevin,
Stefan Kettemann
Abstract:
In the supplemental materials we justify our choice of the number of Chebychev moments used within the kernel polynomial method, show some preliminary results for the large coupling behavior, discuss possible correlation effects in the local density of states, estimate the spin relaxation length and introduce the goodness of fit probability that is used to assess the quality of the fits.
In the supplemental materials we justify our choice of the number of Chebychev moments used within the kernel polynomial method, show some preliminary results for the large coupling behavior, discuss possible correlation effects in the local density of states, estimate the spin relaxation length and introduce the goodness of fit probability that is used to assess the quality of the fits.
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Submitted 6 January, 2016; v1 submitted 13 July, 2015;
originally announced July 2015.
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Anderson Metal-Insulator Transitions With Classical Magnetic Impurities
Authors:
Daniel Jung,
Keith Slevin,
Stefan Kettemann
Abstract:
We study effects of classical magnetic impurities on the Anderson metal-insulator transition numerically. We find that a small concentration of Heisenberg impurities enhances the critical disorder amplitude $W_{\rm c}$ with increasing exchange coupling strength $J$. The resulting scaling with $J$ is analyzed which supports an anomalous scaling prediction by Wegner due to the combined breaking of t…
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We study effects of classical magnetic impurities on the Anderson metal-insulator transition numerically. We find that a small concentration of Heisenberg impurities enhances the critical disorder amplitude $W_{\rm c}$ with increasing exchange coupling strength $J$. The resulting scaling with $J$ is analyzed which supports an anomalous scaling prediction by Wegner due to the combined breaking of time-reversal and spin-rotational symmetry. Moreover, we find that the presence of magnetic impurities lowers the critical correlation length exponent $ν$ and enhances the multifractality parameter $α_0$. The new value of $ν$ improves the agreement with the value measured in experiments on the metal-insulator transition (MIT) in doped semiconductors like phosphor-doped silicon, where a finite density of magnetic moments is known to exist in the vicinity of the MIT. The results are obtained by a finite-size scaling analysis of the geometric mean of the local density of states which is calculated by means of the kernel polynomial method. We establish this combination of numerical techniques as a method to obtain critical properties of disordered systems quantitatively.
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Submitted 25 February, 2016; v1 submitted 13 July, 2015;
originally announced July 2015.
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Stability of xenon oxides at high pressures
Authors:
Qiang Zhu,
Daniel Y. Jung,
Artem R. Oganov,
Colin W. Glass,
Carlo Gatti,
Andriy O. Lyakhov
Abstract:
Xenon, which is quite inert under ambient conditions, may become reactive under pressure. The possibility of formation of stable xenon oxides and silicates in the interior of the Earth could explain the atmospheric missing xenon paradox. Using the ab initio evolutionary algorithm, we predict the thermodynamical stabilization of Xe-O compounds at high pressures (XeO, XeO2 and XeO3 at pressures abov…
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Xenon, which is quite inert under ambient conditions, may become reactive under pressure. The possibility of formation of stable xenon oxides and silicates in the interior of the Earth could explain the atmospheric missing xenon paradox. Using the ab initio evolutionary algorithm, we predict the thermodynamical stabilization of Xe-O compounds at high pressures (XeO, XeO2 and XeO3 at pressures above 83, 102 and 114 GPa, respectively). Our calculations indicate large charge transfer in these oxides, suggesting that large electronegativity difference and pressure are the key factors favoring the formation of xenon compounds. Xenon compounds in the Earth's mantle, however, cannot directly explain the missing xenon paradox: xenon oxides are unstable in equilibrium with metallic iron in the Earth's lower mantle, while xenon silicates are predicted to spontaneously decompose at all mantle pressures (<136 GPa). This does not preclude Xe atoms from being retained in defects of mantle silicates and oxides.
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Submitted 29 November, 2012; v1 submitted 28 November, 2012;
originally announced November 2012.
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Spectral Density Scaling of Fluctuating Interfaces
Authors:
Hyun-Joo Kim,
Doil Jung
Abstract:
Covariance matrix of heights measured relative to the average height of a growing self-affine surface in the steady state are investigated in the framework of random matrix theory. We show that the spectral density of the covariance matrix scales as $ρ(λ) \sim λ^{-ν}$ deviating from the prediction of random matrix theory and has a scaling form, $ρ(λ, L) = λ^{-ν} f(λ/ L^φ)$ for the lateral system s…
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Covariance matrix of heights measured relative to the average height of a growing self-affine surface in the steady state are investigated in the framework of random matrix theory. We show that the spectral density of the covariance matrix scales as $ρ(λ) \sim λ^{-ν}$ deviating from the prediction of random matrix theory and has a scaling form, $ρ(λ, L) = λ^{-ν} f(λ/ L^φ)$ for the lateral system size $L$, where the scaling function $f(x)$ approaches a constant for $x \ll 1$ and zero for $x \gg 1$. The obtained values of exponents by numerical simulations are $ν\approx 1.73$ and $φ\approx 1.40$ for the Edward-Wilkinson class and $ν\approx 1.64$ and $φ\approx 1.79$ for the Kardar-Parisi-Zhang class, respectively. The distribution of the largest eigenvalues follows a scaling form as $ρ(λ_{max}, L) = 1/L^b f_{max} ((λ_{max} -L^a)/L^b)$, which is different from the Tracy-Widom distribution of random matrix theory while the exponents $a$ and $b$ are given by the same values for the two different classes.
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Submitted 6 October, 2012; v1 submitted 10 August, 2012;
originally announced August 2012.
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Electrical spin injection and detection in an InAs quantum well
Authors:
Hyun Cheol Koo,
Hyunjung Yi,
Jae-Beom Ko,
Joonyeon Chang,
Suk-Hee Han,
Donghwa Jung,
Seon-Gu Huh,
Jonghwa Eom
Abstract:
We demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin polarized current is injected from a NiFe thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multi-layers. Injected spins accumulate and diffuse out in the 2DEG, and the spins are electrically detected by a neighboring NiFe electrode. The observed spin diffusion length is 1.8 um…
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We demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin polarized current is injected from a NiFe thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multi-layers. Injected spins accumulate and diffuse out in the 2DEG, and the spins are electrically detected by a neighboring NiFe electrode. The observed spin diffusion length is 1.8 um at 20 K. The injected spin polarization across the NiFe/InAs interface is 1.9% at 20 K and remains at 1.4% even at room temperature. Our experimental results will contribute significantly to the realization of a practical spin field effect transistor.
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Submitted 21 December, 2006;
originally announced December 2006.
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Electrical Characterization of PbZr0.4Ti0.6O3 Capacitors
Authors:
P. Zubko,
D. J. Jung,
J. F. Scott
Abstract:
We have conducted a careful study of current-voltage (I-V) characteristics in fully integrated commercial PbZr0.4Ti0.6O3 thin film capacitors with Pt bottom and Ir/IrO2 top electrodes. Highly reproducible steady state I-V were obtained at various temperatures over two decades in voltage from current-time data and analyzed in terms of several common transport models including space charge limited…
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We have conducted a careful study of current-voltage (I-V) characteristics in fully integrated commercial PbZr0.4Ti0.6O3 thin film capacitors with Pt bottom and Ir/IrO2 top electrodes. Highly reproducible steady state I-V were obtained at various temperatures over two decades in voltage from current-time data and analyzed in terms of several common transport models including space charge limited conduction, Schottky thermionic emission under full and partial depletion and Poole-Frenkel conduction, showing that the later is the most plausible leakage mechanism in these high quality films. In addition, ferroelectric hysteresis loops and capacitance-voltage data were obtained over a large range of temperatures and discussed in terms of a modified Landau-Ginzburg-Devonshire theory accounting for space charge effects.
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Submitted 23 July, 2006;
originally announced July 2006.
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Space Charge Effects in Ferroelectric Thin Films
Authors:
P. Zubko,
D. J. Jung,
J. F. Scott
Abstract:
The effects of space charges on hysteresis loops and field distributions in ferroelectrics have been investigated numerically using the phenomenological Landau-Ginzburg-Devonshire theory. Cases with the ferroelectric fully and partially depleted have been considered. In general, increasing the number of charged impurities results in a lowering of the polarization and coercive field values. Squar…
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The effects of space charges on hysteresis loops and field distributions in ferroelectrics have been investigated numerically using the phenomenological Landau-Ginzburg-Devonshire theory. Cases with the ferroelectric fully and partially depleted have been considered. In general, increasing the number of charged impurities results in a lowering of the polarization and coercive field values. Squarer loops were observed in the partially depleted cases and a method was proposed to identify fully depleted samples experimentally from dielectric and polarization measurements alone. Unusual field distributions found for higher dopant concentrations have some interesting implications for leakage mechanisms and limit the range of validity of usual semiconductor equations for carrier transport.
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Submitted 22 July, 2006;
originally announced July 2006.
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High-Field Conduction in Barium Titanate
Authors:
J. F. Scott,
F. D. Morrison,
P. Zubko,
D. J. Jung,
P. Baxter,
M. M. Saad,
J. M. Gregg,
R. M. Bowman
Abstract:
We present current-voltage studies of very thin (ca. 77 nm) barium titanate single crystals up to 1.3 GV/m applied field. These show that the mechanism of leakage current at high fields is that of space charge limited conduction (SCLC) in a regime with a continuous distribution of traps, according to the original model of Rose [Phys. Rev. 97, 1537 (1955)]. This study represents a factor of x5 in…
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We present current-voltage studies of very thin (ca. 77 nm) barium titanate single crystals up to 1.3 GV/m applied field. These show that the mechanism of leakage current at high fields is that of space charge limited conduction (SCLC) in a regime with a continuous distribution of traps, according to the original model of Rose [Phys. Rev. 97, 1537 (1955)]. This study represents a factor of x5 in field compared with the early studies of BaTiO3 conduction [A. Branwood et al., Proc. Phys. Soc. London 79, 1161 (1962)]. Comparison is also given with ceramic multilayer barium titanate capacitors, which show similar SCLC behaviour. The data are shown to be completely incompatible with variable range hopping [B. I. Shklovskii, Sov. Phys. Semicond. 6, 1964 (1973)], despite the recent report of such mechanism in SrTiO3 films [D. Fuchs, M. Adam, and R. Schneider, J. Phys. IV France 11, 71 (2001)].
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Submitted 22 September, 2004;
originally announced September 2004.
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Peltier ac calorimeter
Authors:
D. H. Jung,
I. K. Moon,
Y. H. Jeong
Abstract:
A new ac calorimeter, utilizing the Peltier effect of a thermocouple junction as an ac power source, is described. This Peltier ac calorimeter allows to measure the absolute value of heat capacity of small solid samples with sub-milligrams of mass. The calorimeter can also be used as a dynamic one with a dynamic range of several decades at low frequencies.
A new ac calorimeter, utilizing the Peltier effect of a thermocouple junction as an ac power source, is described. This Peltier ac calorimeter allows to measure the absolute value of heat capacity of small solid samples with sub-milligrams of mass. The calorimeter can also be used as a dynamic one with a dynamic range of several decades at low frequencies.
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Submitted 15 October, 2001;
originally announced October 2001.
