Showing 1–10 of 10 results for author: Campbell, N

Electronic-grade epitaxial (111) KTaO3 heterostructures

Authors: Jieun Kim, Muqing Yu, Jung-Woo Lee, Shun-Li Shang, Gi-Yeop Kim, Pratap Pal, Jinsol Seo, Neil Campbell, Kitae Eom, Ranjani Ramachandran, Mark S. Rzchowski, Sang Ho Oh, Si-Young Choi, Zi-Kui Liu, Jeremy Levy, Chang-Beom Eom

Abstract: KTaO3 has recently attracted attention as a model system to study the interplay of quantum paraelectricity, spin-orbit coupling, and superconductivity. However, the high and low vapor pressures of potassium and tantalum present processing challenges to creating interfaces clean enough to reveal the intrinsic quantum properties. Here, we report superconducting heterostructures based on electronic-g… ▽ More KTaO3 has recently attracted attention as a model system to study the interplay of quantum paraelectricity, spin-orbit coupling, and superconductivity. However, the high and low vapor pressures of potassium and tantalum present processing challenges to creating interfaces clean enough to reveal the intrinsic quantum properties. Here, we report superconducting heterostructures based on electronic-grade epitaxial (111) KTaO3 thin films. Electrical and structural characterizations reveal that two-dimensional electron gas at the heterointerface between amorphous LaAlO3 and KTaO3 thin film exhibits significantly higher electron mobility, superconducting transition temperature and critical current density than those in bulk single crystal KTaO3-based heterostructures owing to cleaner interface in KTaO3 thin films. Our hybrid approach may enable epitaxial growth of other alkali metal-based oxides that lie beyond the capabilities of conventional methods. △ Less

Submitted 25 August, 2023; originally announced August 2023.

Local atomic configuration control of superconductivity in the undoped pnictide parent compound BaFe2As2

Authors: Jong-Hoon Kang, Philip J. Ryan, Jong-Woo Kim, Jonathon Schad, Jacob P. Podkaminer, Neil Campbell, Joseph Suttle, Tae Heon Kim, Liang Luo, Di Cheng, Yesusa G. Collantes, Eric E. Hellstrom, Jigang Wang, Robert McDermott, Mark S. Rzchowski, Chang-Beom Eom

Abstract: Emergent superconductivity is strongly correlated with the symmetry of local atomic configuration in the parent compounds of iron-based superconductors. While chemical doping or hydrostatic pressure can change the local geometry, these conventional approaches do not provide a clear pathway in tuning the detailed atomic arrangement predictably, due to the parent compounds complicated structural def… ▽ More Emergent superconductivity is strongly correlated with the symmetry of local atomic configuration in the parent compounds of iron-based superconductors. While chemical doping or hydrostatic pressure can change the local geometry, these conventional approaches do not provide a clear pathway in tuning the detailed atomic arrangement predictably, due to the parent compounds complicated structural deformation in the presence of the tetragonal-to-orthorhombic phase transition. Here, we demonstrate a systematic approach to manipulate the local structural configurations in BaFe2As2 epitaxial thin films by controlling two independent structural factors orthorhombicity (in-plane anisotropy) and tetragonality (out-of-plane/in-plane balance) from lattice parameters. We tune superconductivity without chemical doping utilizing both structural factors separately, controlling local tetrahedral coordination in designed thin film heterostructures with substrate clamping and bi-axial strain. We further show that this allows quantitative control of both the structural phase transition, associated magnetism, and superconductivity in the parent material BaFe2As2. This approach will advance the development of tunable thin film superconductors in reduced dimension. △ Less

Submitted 7 October, 2021; originally announced October 2021.

Oxide two-dimensional electron gas with high mobility at room-temperature

Authors: Kitae Eom, Hanjong Paik, Jinsol Seo, Neil Campbell, Evgeny Y. Tsymbal, Sang Ho Oh, Mark Rzchowski, Darrell G. Schlom, Chang-beom Eom

Abstract: The prospect of 2-dimensional electron gases (2DEGs) possessing high mobility at room temperature in wide-bandgap perovskite stannates is enticing for oxide electronics, particularly to realize transparent and high-electron mobility transistors. Nonetheless only a small number of studies to date report 2DEGs in BaSnO3-based heterostructures. Here, we report 2DEG formation at the LaScO3/BaSnO3 (LSO… ▽ More The prospect of 2-dimensional electron gases (2DEGs) possessing high mobility at room temperature in wide-bandgap perovskite stannates is enticing for oxide electronics, particularly to realize transparent and high-electron mobility transistors. Nonetheless only a small number of studies to date report 2DEGs in BaSnO3-based heterostructures. Here, we report 2DEG formation at the LaScO3/BaSnO3 (LSO/BSO) interface with a room-temperature mobility of 60 cm2/V s at a carrier concentration of 1.7x1013 cm-2. This is an order of magnitude higher mobility at room temperature than achieved in SrTiO3-based 2DEGs. We achieved this by combining a thick BSO buffer layer with an ex-situ high-temperature treatment, which not only reduces the dislocation density but also produces a SnO2-terminated atomically flat surface, followed by the growth of an overlying BSO/LSO interface. Using weak-beam dark field imaging and in-line electron holography technique, we reveal a reduction of the threading dislocation density, and provide direct evidence for the spatial confinement of a 2DEG at the BSO/LSO interface. Our work opens a new pathway to explore the exciting physics of stannate-based 2DEGs at application-relevant temperatures for oxide nanoelectronics. △ Less

Submitted 5 October, 2021; originally announced October 2021.

Comments: 21 pages, 5 figures

Route to in situ synthesis of epitaxial Pr2Ir2O7 thin films guided by thermodynamic calculations

Authors: Lu Guo, Shun-Li Shang, Neil Campbell, Mark Rzchowski, Zi-Kui Liu, Chang-Beom Eom, +These two authors equally contributed to this work

Abstract: In situ growth of pyrochlore iridate thin films has been a long-standing challenge due to the low reactivity of Ir at low temperatures and the vaporization of volatile gas species such as IrO3(g) and IrO2(g) at high temperatures and high oxygen partial pressures. To address this challenge, we combine thermodynamic analysis of the Pr-Ir-O2 system with experimental results from the conventional phys… ▽ More In situ growth of pyrochlore iridate thin films has been a long-standing challenge due to the low reactivity of Ir at low temperatures and the vaporization of volatile gas species such as IrO3(g) and IrO2(g) at high temperatures and high oxygen partial pressures. To address this challenge, we combine thermodynamic analysis of the Pr-Ir-O2 system with experimental results from the conventional physical vapor deposition (PVD) technique of co-sputtering. Our results indicate that only high growth temperatures yield films with crystallinity sufficient for utilizing and tailoring the desired topological electronic properties. Thermodynamic calculations indicate that high deposition temperatures and high partial pressures of gas species O2(g) and IrO3(g), are required to stabilize Pr2Ir2O7. We further find that the gas species partial pressure requirements are beyond that achievable by any conventional PVD technique. We experimentally show that conventional PVD growth parameters produce exclusively Pr3IrO7, which conclusion we reproduce with theoretical calculations. Our findings provide solid evidence that in situ synthesis of Pr2Ir2O7 thin films is fettered by the inability to grow with oxygen partial pressure on the order of 10 Torr, a limitation inherent to the PVD process. Thus, we suggest high-pressure techniques, in particular chemical vapor deposition (CVD), as a route to synthesis of Pr2Ir2O7, as this can support thin film deposition under the high pressure needed for in situ stabilization of Pr2Ir2O7. △ Less

Submitted 22 September, 2020; v1 submitted 20 September, 2020; originally announced September 2020.

Superconductivity in Undoped BaFe2As2 by Tetrahedral Geometry Design

Authors: J. H. Kang, J. -W. Kim, P. J. Ryan, L. Xie, L. Guo, C. Sundahl, J. Schad, N. Campbell, Y. G. Collantes, E. E. Hellstrom, M. S. Rzchowski, C. B. Eom

Abstract: Fe-based superconductors exhibit a diverse interplay between charge, orbital, and magnetic ordering1-4. Variations in atomic geometry affect electron hopping between Fe atoms5,6 and the Fermi surface topology, influencing magnetic frustration and the pairing mechanism through changes of orbital overlap and occupancies7-11. Here, we experimentally demonstrate a systematic approach to realize superc… ▽ More Fe-based superconductors exhibit a diverse interplay between charge, orbital, and magnetic ordering1-4. Variations in atomic geometry affect electron hopping between Fe atoms5,6 and the Fermi surface topology, influencing magnetic frustration and the pairing mechanism through changes of orbital overlap and occupancies7-11. Here, we experimentally demonstrate a systematic approach to realize superconductivity without chemical doping in BaFe2As2, employing geometric design within an epitaxial heterostructure. We control both tetragonality and orthorhombicity in BaFe2As2 through superlattice engineering, which we experimentally find to induce superconductivity when the As-Fe-As bond angle approaches that in a regular tetrahedron. This approach of superlattice design could lead to insights into low dimensional superconductivity in Fe-based superconductors. △ Less

Submitted 2 January, 2020; v1 submitted 1 January, 2020; originally announced January 2020.

Controlling spin current polarization through non-collinear antiferromagnetism

Authors: T. Nan, C. X. Quintela, J. Irwin, G. Gurung, D. F. Shao, J. Gibbons, N. Campbell, K. Song, S. Y. Choi, L. Guo, R. D. Johnson, P. Manuel, R. V. Chopdekar, I. Hallsteinsen, T. Tybell, P. J. Ryan, J. W. Kim, Y. S. Choi, P. G. Radaelli, D. C. Ralph, E. Y. Tsymba, M. S. Rzchowski, C. B. Eom

Abstract: The spin-Hall effect describes the interconversion of charge currents and spin currents, enabling highly efficient manipulation of magnetization for spintronics. Symmetry conditions generally restrict polarizations of these spin currents to be orthogonal to both the charge and spin flows. Spin polarizations can deviate from such direction in nonmagnetic materials only when the crystalline symmetry… ▽ More The spin-Hall effect describes the interconversion of charge currents and spin currents, enabling highly efficient manipulation of magnetization for spintronics. Symmetry conditions generally restrict polarizations of these spin currents to be orthogonal to both the charge and spin flows. Spin polarizations can deviate from such direction in nonmagnetic materials only when the crystalline symmetry is reduced11. Here we experimentally show control of the spin polarization direction by using a non-collinear antiferromagnet Mn$_{3}$GaN, in which the triangular spin structure creates a low magnetic symmetry state while maintaining a high crystalline symmetry. We demonstrate that epitaxial Mn3GaN/Permalloy heterostructures can generate unique types of spinHall torques at room temperature corresponding to unconventional spin polarizations collinear to spin currents or charge currents which are forbidden in any sample with two-fold rotational symmetry. Our results demonstrate an approach based on spin-structure design for controlling spinorbit torque, paving the way for further progress in the emergent field of antiferromagnetic spintronics. △ Less

Submitted 29 December, 2019; originally announced December 2019.

Epitaxial antiperovskite/perovskite heterostructures for materials design

Authors: Camilo X. Quintela, Kyung Song, Ding-Fu Shao, Lin Xie, Tianxiang Nan, Tula R. Paudel, Neil Campbell, Xiaoqing Pan, Mark S. Rzchowski, Evgeny Y. Tsymbal, Si-Young Choi, Chang-Beom Eom

Abstract: We demonstrate fabrication of atomically sharp interfaces between nitride antiperovskite Mn$_{3}$GaN and oxide perovskites (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_{3}$ (LSAT) and SrTiO$_{3}$ as paradigms of nitride-antiperovskite/oxide-perovskite heterostructures. Using a combination of scanning transmission electron microscopy (STEM), atomic-resolution spectroscopic techniques, and first… ▽ More We demonstrate fabrication of atomically sharp interfaces between nitride antiperovskite Mn$_{3}$GaN and oxide perovskites (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_{3}$ (LSAT) and SrTiO$_{3}$ as paradigms of nitride-antiperovskite/oxide-perovskite heterostructures. Using a combination of scanning transmission electron microscopy (STEM), atomic-resolution spectroscopic techniques, and first-principle calculations, we investigated the atomic-scale structure, composition, and boding at the interface. We show that the epitaxial growth between the antiperovskite and perovskite compounds is mediated by a coherent interfacial monolayer that connects the two anti-structures. We anticipate our results to be a major step for the development of functional antiperovskite/perovskite heterostructures opening to harness a combination of their functional properties including topological properties for ultra low power applications. △ Less

Submitted 29 December, 2019; originally announced December 2019.

Spontaneous Hall Effect enhanced by local Ir moments in epitaxial Pr$_2$Ir$_2$O$_7$ thin films

Authors: Lu Guo, Neil Campbell, Yongseong Choi, Jong-Woo Kim, Philip J. Ryan, Huaixun Huyan, Linze Li, Tianxiang Nan, Jong-Hong Kang, Chris Sundahl, Xiaoqing Pan, M. S. Rzchowski, Chang-Beom Eom

Abstract: Rare earth pyrochlore Iridates (RE2Ir2O7) consist of two interpenetrating cation sublattices, the RE with highly-frustrated magnetic moments, and the Iridium with extended conduction orbitals significantly mixed by spin-orbit interactions. The coexistence and coupling of these two sublattices create a landscape for discovery and manipulation of quantum phenomena such as the topological Hall effect… ▽ More Rare earth pyrochlore Iridates (RE2Ir2O7) consist of two interpenetrating cation sublattices, the RE with highly-frustrated magnetic moments, and the Iridium with extended conduction orbitals significantly mixed by spin-orbit interactions. The coexistence and coupling of these two sublattices create a landscape for discovery and manipulation of quantum phenomena such as the topological Hall effect, massless conduction bands, and quantum criticality. Thin films allow extended control of the material system via symmetry-lowering effects such as strain. While bulk Pr2Ir2O7 shows a spontaneous hysteretic Hall effect below 1.5K, we observe the effect at elevated temperatures up to 15K in epitaxial thin films on (111) YSZ substrates synthesized via solid phase epitaxy. Similar to the bulk, the lack of observable long-range magnetic order in the thin films points to a topological origin. We use synchrotron-based element-specific x-ray diffraction (XRD) and x-ray magnetic circular dichroism (XMCD) to compare powders and thin films to attribute the spontaneous Hall effect in the films to localization of the Ir moments. We link the thin film Ir local moments to lattice distortions absent in the bulk-like powders. We conclude that the elevated-temperature spontaneous Hall effect is caused by the topological effect originating either from the Ir or Pr sublattice, with interaction strength enhanced by the Ir local moments. This spontaneous Hall effect with weak net moment highlights the effect of vanishingly small lattice distortions as a means to discover topological phenomena in metallic frustrated magnetic materials. △ Less

Submitted 27 December, 2019; originally announced December 2019.

Journal ref: Phys. Rev. B 101, 104405 (2020)

Anisotropic spin-orbit torque generation in epitaxial SrIrO3 by symmetry design

Authors: T. Nan, T. J. Anderson, J. Gibbons, K. Hwang, N. Campbell, H. Zhou, Y. Q. Dong, G. Y. Kim, N. Reynolds, X. J. Wang, N. X. Sun, S. Y. Choi, M. S. Rzchowski, Yong Baek Kim, D. C. Ralph, C. B. Eom

Abstract: Spin-orbit coupling (SOC), the interaction between the electron spin and the orbital angular momentum, can unlock rich phenomena at interfaces, in particular interconverting spin and charge currents. Conventional heavy metals have been extensively explored due to their strong SOC of conduction electrons. However, spin-orbit effects in classes of materials such as epitaxial 5d-electron transition m… ▽ More Spin-orbit coupling (SOC), the interaction between the electron spin and the orbital angular momentum, can unlock rich phenomena at interfaces, in particular interconverting spin and charge currents. Conventional heavy metals have been extensively explored due to their strong SOC of conduction electrons. However, spin-orbit effects in classes of materials such as epitaxial 5d-electron transition metal complex oxides, which also host strong SOC, remain largely unreported. In addition to strong SOC, these complex oxides can also provide the additional tuning knob of epitaxy to control the electronic structure and the engineering of spin-to-charge conversion by crystalline symmetry. Here, we demonstrate room-temperature generation of spin-orbit torque on a ferromagnet with extremely high efficiency via the spin-Hall effect in epitaxial metastable perovskite SrIrO3. We first predict a large intrinsic spin-Hall conductivity in orthorhombic bulk SrIrO3 arising from the Berry curvature in the electronic band structure. By manipulating the intricate interplay between SOC and crystalline symmetry, we control the spin-Hall torque ratio by engineering the tilt of the corner-sharing oxygen octahedra in perovskite SrIrO3 through epitaxial strain. This allows the presence of an anisotropic spin-Hall effect due to a characteristic structural anisotropy in SrIrO3 with orthorhombic symmetry. Our experimental findings demonstrate the heteroepitaxial symmetry design approach to engineer spin-orbit effects. We therefore anticipate that these epitaxial 5d transition-metal oxide thin films can be an ideal building block for low-power spintronics. △ Less

Submitted 20 August, 2018; originally announced August 2018.

Superconductivity-localization interplay and fluctuation magnetoresistance in epitaxial BaPb$_{1-x}$Bi$_x$O$_3$ thin films

Authors: David T. Harris, Neil Campbell, Reinhard Uecker, Mario Brützam, Darrell G. Schlom, Alex Levchenko, Mark S. Rzchowski, Chang-Beom Eom

Abstract: BaPb$_{1-x}$Bi$_x$O$_3$ is a superconductor, with transition temperature $T_c=11$ K, whose parent compound BaBiO$_3$ possess a charge ordering phase and perovskite crystal structure reminiscent of the cuprates. The lack of magnetism simplifies the BaPb$_{1-x}$Bi$_{x}$O$_3$ phase diagram, making this system an ideal platform for contrasting high-$T_c$ systems with isotropic superconductors. Here we… ▽ More BaPb$_{1-x}$Bi$_x$O$_3$ is a superconductor, with transition temperature $T_c=11$ K, whose parent compound BaBiO$_3$ possess a charge ordering phase and perovskite crystal structure reminiscent of the cuprates. The lack of magnetism simplifies the BaPb$_{1-x}$Bi$_{x}$O$_3$ phase diagram, making this system an ideal platform for contrasting high-$T_c$ systems with isotropic superconductors. Here we use high-quality epitaxial thin films and magnetotransport to demonstrate superconducting fluctuations that extend well beyond $T_c$. For the thickest films (thickness above $\sim100$ nm) this region extends to $\sim27$ K, well above the bulk $T_c$ and remarkably close to the higher $T_c$ of Ba$_{1-x}$K$_x$BiO$_3$ ($T_c=31$ K). We drive the system through a superconductor-insulator transition by decreasing thickness and find the observed $T_c$ correlates strongly with disorder. This material manifests strong fluctuations across a wide range of thicknesses, temperatures, and disorder presenting new opportunities for understanding the precursor of superconductivity near the 2D-3D dimensionality crossover. △ Less

Submitted 23 March, 2018; v1 submitted 11 January, 2018; originally announced January 2018.

Comments: 20 pages, 8 figures

Journal ref: Phys. Rev. Materials 2, 041801 (2018)