Showing 1–24 of 24 results for author: Rzchowski, M S

Electronic-grade epitaxial (111) KTaO3 heterostructures

Authors: Jieun Kim, Muqing Yu, Jung-Woo Lee, Shun-Li Shang, Gi-Yeop Kim, Pratap Pal, Jinsol Seo, Neil Campbell, Kitae Eom, Ranjani Ramachandran, Mark S. Rzchowski, Sang Ho Oh, Si-Young Choi, Zi-Kui Liu, Jeremy Levy, Chang-Beom Eom

Abstract: KTaO3 has recently attracted attention as a model system to study the interplay of quantum paraelectricity, spin-orbit coupling, and superconductivity. However, the high and low vapor pressures of potassium and tantalum present processing challenges to creating interfaces clean enough to reveal the intrinsic quantum properties. Here, we report superconducting heterostructures based on electronic-g… ▽ More KTaO3 has recently attracted attention as a model system to study the interplay of quantum paraelectricity, spin-orbit coupling, and superconductivity. However, the high and low vapor pressures of potassium and tantalum present processing challenges to creating interfaces clean enough to reveal the intrinsic quantum properties. Here, we report superconducting heterostructures based on electronic-grade epitaxial (111) KTaO3 thin films. Electrical and structural characterizations reveal that two-dimensional electron gas at the heterointerface between amorphous LaAlO3 and KTaO3 thin film exhibits significantly higher electron mobility, superconducting transition temperature and critical current density than those in bulk single crystal KTaO3-based heterostructures owing to cleaner interface in KTaO3 thin films. Our hybrid approach may enable epitaxial growth of other alkali metal-based oxides that lie beyond the capabilities of conventional methods. △ Less

Submitted 25 August, 2023; originally announced August 2023.

Microscopic piezoelectric behavior of clamped and membrane (001) PMN-30PT thin films

Authors: A. Brewer, S. Lindemann, B. Wang, W. Maeng, J. Frederick, F. Li, Y. Choi, P. J. Thompson, J. W. Kim, T. Mooney, V. Vaithyanathan, D. G. Schlom, M. S. Rzchowski, L. Q. Chen, P. J. Ryan, C. B. Eom

Abstract: Bulk single-crystal relaxor-ferroelectrics, like Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), are widely known for their large piezoelectricity. This is attributed to polarization rotation which is facilitated by the presence of various crystal symmetries for compositions near a morphotropic phase boundary (MPB). Relaxor-ferroelectric thin films, which are necessary for low-voltage applications, suffer a red… ▽ More Bulk single-crystal relaxor-ferroelectrics, like Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), are widely known for their large piezoelectricity. This is attributed to polarization rotation which is facilitated by the presence of various crystal symmetries for compositions near a morphotropic phase boundary (MPB). Relaxor-ferroelectric thin films, which are necessary for low-voltage applications, suffer a reduction in their piezoelectric response due to clamping by the passive substrate. To understand the microscopic behavior of this adverse phenomenon, we employ AC electric field driven in-operando synchrotron x-ray diffraction (XRD) on patterned device structures to investigate the piezoelectric domain behavior under an electric field for both a clamped (001) PMN-PT thin film on Si and a (001) PMN-PT membrane released from its substrate. In the clamped film, the substrate inhibits the field induced rhombohedral (R) to tetragonal (T) phase transition resulting in a reversible R to Monoclinic (M) transition with a reduced longitudinal piezoelectric coefficient d33 < 100 pm/V. Releasing the film from the substrate results in recovery of the R to T transition and results in a d33 > 1000 pm/V. Using diffraction with spatial mapping, we find that lateral constraints imposed by the boundary between active and inactive material also inhibits the R to T transition. Phase-field calculations on both clamped and released PMN-PT thin films simulate our experimental findings. Resolving the suppression of thin film piezoelectric response is critical to their application in piezo-driven technologies. △ Less

Submitted 16 October, 2021; originally announced October 2021.

Low-Voltage Magnetoelectric Coupling in Membrane Heterostructures

Authors: S. Lindemann, J. Irwin, G. -Y. Kim, B. Wang, K. Eom, J. J. Wang, J. M. Hu, L. Q. Chen, S. Y. Choi, C. B. Eom, M. S. Rzchowski

Abstract: Strain-mediated magnetoelectric (ME) coupling in ferroelectric (FE) / ferromagnetic (FM) heterostructures offers a unique opportunity for both fundamental scientific research and low power multifunctional devices. Relaxor-ferroelectrics, like (1-x)Pb(Mg1/3Nb2/3)O3-(x)PbTiO3 (PMN-xPT), are ideal FE layer candidates due to their giant piezoelectricity. But thin films of PMN-PT suffer from substrate… ▽ More Strain-mediated magnetoelectric (ME) coupling in ferroelectric (FE) / ferromagnetic (FM) heterostructures offers a unique opportunity for both fundamental scientific research and low power multifunctional devices. Relaxor-ferroelectrics, like (1-x)Pb(Mg1/3Nb2/3)O3-(x)PbTiO3 (PMN-xPT), are ideal FE layer candidates due to their giant piezoelectricity. But thin films of PMN-PT suffer from substrate clamping which substantially reduces piezoelectric in-plane strains. Here we present the first demonstration of low voltage ME coupling in an all-thin-film heterostructure which utilizes the anisotropic strains induced by the (011) orientation of PMN-PT. We completely remove PMN-PT films from their substrate and couple with FM Ni overlayers to create membrane PMN-PT/Ni heterostructures showing 90 degree Ni magnetization rotation with 3V PMN-PT bias, much less than the bulk PMNPT ~100V requirement. Scanning transmission electron microscopy and phase-field simulations clarify the membrane response. These results provide a crucial step towards understanding the microstructural behavior of PMN-PT thin films for use in piezo-driven magnetoelectric heterostructures. △ Less

Submitted 11 October, 2021; originally announced October 2021.

Local atomic configuration control of superconductivity in the undoped pnictide parent compound BaFe2As2

Authors: Jong-Hoon Kang, Philip J. Ryan, Jong-Woo Kim, Jonathon Schad, Jacob P. Podkaminer, Neil Campbell, Joseph Suttle, Tae Heon Kim, Liang Luo, Di Cheng, Yesusa G. Collantes, Eric E. Hellstrom, Jigang Wang, Robert McDermott, Mark S. Rzchowski, Chang-Beom Eom

Abstract: Emergent superconductivity is strongly correlated with the symmetry of local atomic configuration in the parent compounds of iron-based superconductors. While chemical doping or hydrostatic pressure can change the local geometry, these conventional approaches do not provide a clear pathway in tuning the detailed atomic arrangement predictably, due to the parent compounds complicated structural def… ▽ More Emergent superconductivity is strongly correlated with the symmetry of local atomic configuration in the parent compounds of iron-based superconductors. While chemical doping or hydrostatic pressure can change the local geometry, these conventional approaches do not provide a clear pathway in tuning the detailed atomic arrangement predictably, due to the parent compounds complicated structural deformation in the presence of the tetragonal-to-orthorhombic phase transition. Here, we demonstrate a systematic approach to manipulate the local structural configurations in BaFe2As2 epitaxial thin films by controlling two independent structural factors orthorhombicity (in-plane anisotropy) and tetragonality (out-of-plane/in-plane balance) from lattice parameters. We tune superconductivity without chemical doping utilizing both structural factors separately, controlling local tetrahedral coordination in designed thin film heterostructures with substrate clamping and bi-axial strain. We further show that this allows quantitative control of both the structural phase transition, associated magnetism, and superconductivity in the parent material BaFe2As2. This approach will advance the development of tunable thin film superconductors in reduced dimension. △ Less

Submitted 7 October, 2021; originally announced October 2021.

Superconductivity in Undoped BaFe2As2 by Tetrahedral Geometry Design

Authors: J. H. Kang, J. -W. Kim, P. J. Ryan, L. Xie, L. Guo, C. Sundahl, J. Schad, N. Campbell, Y. G. Collantes, E. E. Hellstrom, M. S. Rzchowski, C. B. Eom

Abstract: Fe-based superconductors exhibit a diverse interplay between charge, orbital, and magnetic ordering1-4. Variations in atomic geometry affect electron hopping between Fe atoms5,6 and the Fermi surface topology, influencing magnetic frustration and the pairing mechanism through changes of orbital overlap and occupancies7-11. Here, we experimentally demonstrate a systematic approach to realize superc… ▽ More Fe-based superconductors exhibit a diverse interplay between charge, orbital, and magnetic ordering1-4. Variations in atomic geometry affect electron hopping between Fe atoms5,6 and the Fermi surface topology, influencing magnetic frustration and the pairing mechanism through changes of orbital overlap and occupancies7-11. Here, we experimentally demonstrate a systematic approach to realize superconductivity without chemical doping in BaFe2As2, employing geometric design within an epitaxial heterostructure. We control both tetragonality and orthorhombicity in BaFe2As2 through superlattice engineering, which we experimentally find to induce superconductivity when the As-Fe-As bond angle approaches that in a regular tetrahedron. This approach of superlattice design could lead to insights into low dimensional superconductivity in Fe-based superconductors. △ Less

Submitted 2 January, 2020; v1 submitted 1 January, 2020; originally announced January 2020.

Strain-Driven Disproportionation at a Correlated Oxide Metal-Insulator Transition

Authors: T. H. Kim, T. R. Paudel, R. J. Green, K. Song, H. -S. Lee, S. -Y. Choi, J. Irwin, B. Noesges, L. J. Brillson, M. S. Rzchowski, G. A. Sawatzky, E. Y. Tsymbal, C. B. Eom

Abstract: Metal-to-insulator phase transitions in complex oxide thin films are exciting phenomena which may be useful for device applications, but in many cases the physical mechanism responsible for the transition is not fully understood. Here we demonstrate that epitaxial strain generates local disproportionation of the NiO6 octahedra, driven through changes in the oxygen stoichiometry, and that this dire… ▽ More Metal-to-insulator phase transitions in complex oxide thin films are exciting phenomena which may be useful for device applications, but in many cases the physical mechanism responsible for the transition is not fully understood. Here we demonstrate that epitaxial strain generates local disproportionation of the NiO6 octahedra, driven through changes in the oxygen stoichiometry, and that this directly modifies the metal-to-insulator phase transition in epitaxial (001) NdNiO3 thin films. Theoretically, we predict that the Ni-O-Ni bond angle decreases, while octahedral tilt and local disproportionation of the NiO6 octahedra increases resulting in a small band gap in otherwise metallic system. This is driven by an increase in oxygen vacancy concentration in the rare-earth nickelates with increasing in-plane biaxial tensile strain. Experimentally, we find an increase in pseudocubic unit-cell volume and resistivity with increasing biaxial tensile strain, corroborating our theoretical predictions. With electron energy loss spectroscopy and x-ray absorption, we find a reduction of the Ni valence with increasing tensile strain. These results indicate that epitaxial strain modifies the oxygen stoichiometry of rare-earth perovskite thin films and through this mechanism affect the metal-to-insulator phase transition in these compounds. △ Less

Submitted 29 December, 2019; originally announced December 2019.

Journal ref: Phys. Rev. B 101, 121105 (2020)

Controlling spin current polarization through non-collinear antiferromagnetism

Authors: T. Nan, C. X. Quintela, J. Irwin, G. Gurung, D. F. Shao, J. Gibbons, N. Campbell, K. Song, S. Y. Choi, L. Guo, R. D. Johnson, P. Manuel, R. V. Chopdekar, I. Hallsteinsen, T. Tybell, P. J. Ryan, J. W. Kim, Y. S. Choi, P. G. Radaelli, D. C. Ralph, E. Y. Tsymba, M. S. Rzchowski, C. B. Eom

Abstract: The spin-Hall effect describes the interconversion of charge currents and spin currents, enabling highly efficient manipulation of magnetization for spintronics. Symmetry conditions generally restrict polarizations of these spin currents to be orthogonal to both the charge and spin flows. Spin polarizations can deviate from such direction in nonmagnetic materials only when the crystalline symmetry… ▽ More The spin-Hall effect describes the interconversion of charge currents and spin currents, enabling highly efficient manipulation of magnetization for spintronics. Symmetry conditions generally restrict polarizations of these spin currents to be orthogonal to both the charge and spin flows. Spin polarizations can deviate from such direction in nonmagnetic materials only when the crystalline symmetry is reduced11. Here we experimentally show control of the spin polarization direction by using a non-collinear antiferromagnet Mn$_{3}$GaN, in which the triangular spin structure creates a low magnetic symmetry state while maintaining a high crystalline symmetry. We demonstrate that epitaxial Mn3GaN/Permalloy heterostructures can generate unique types of spinHall torques at room temperature corresponding to unconventional spin polarizations collinear to spin currents or charge currents which are forbidden in any sample with two-fold rotational symmetry. Our results demonstrate an approach based on spin-structure design for controlling spinorbit torque, paving the way for further progress in the emergent field of antiferromagnetic spintronics. △ Less

Submitted 29 December, 2019; originally announced December 2019.

Epitaxial antiperovskite/perovskite heterostructures for materials design

Authors: Camilo X. Quintela, Kyung Song, Ding-Fu Shao, Lin Xie, Tianxiang Nan, Tula R. Paudel, Neil Campbell, Xiaoqing Pan, Mark S. Rzchowski, Evgeny Y. Tsymbal, Si-Young Choi, Chang-Beom Eom

Abstract: We demonstrate fabrication of atomically sharp interfaces between nitride antiperovskite Mn$_{3}$GaN and oxide perovskites (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_{3}$ (LSAT) and SrTiO$_{3}$ as paradigms of nitride-antiperovskite/oxide-perovskite heterostructures. Using a combination of scanning transmission electron microscopy (STEM), atomic-resolution spectroscopic techniques, and first… ▽ More We demonstrate fabrication of atomically sharp interfaces between nitride antiperovskite Mn$_{3}$GaN and oxide perovskites (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_{3}$ (LSAT) and SrTiO$_{3}$ as paradigms of nitride-antiperovskite/oxide-perovskite heterostructures. Using a combination of scanning transmission electron microscopy (STEM), atomic-resolution spectroscopic techniques, and first-principle calculations, we investigated the atomic-scale structure, composition, and boding at the interface. We show that the epitaxial growth between the antiperovskite and perovskite compounds is mediated by a coherent interfacial monolayer that connects the two anti-structures. We anticipate our results to be a major step for the development of functional antiperovskite/perovskite heterostructures opening to harness a combination of their functional properties including topological properties for ultra low power applications. △ Less

Submitted 29 December, 2019; originally announced December 2019.

Spontaneous Hall Effect enhanced by local Ir moments in epitaxial Pr$_2$Ir$_2$O$_7$ thin films

Authors: Lu Guo, Neil Campbell, Yongseong Choi, Jong-Woo Kim, Philip J. Ryan, Huaixun Huyan, Linze Li, Tianxiang Nan, Jong-Hong Kang, Chris Sundahl, Xiaoqing Pan, M. S. Rzchowski, Chang-Beom Eom

Abstract: Rare earth pyrochlore Iridates (RE2Ir2O7) consist of two interpenetrating cation sublattices, the RE with highly-frustrated magnetic moments, and the Iridium with extended conduction orbitals significantly mixed by spin-orbit interactions. The coexistence and coupling of these two sublattices create a landscape for discovery and manipulation of quantum phenomena such as the topological Hall effect… ▽ More Rare earth pyrochlore Iridates (RE2Ir2O7) consist of two interpenetrating cation sublattices, the RE with highly-frustrated magnetic moments, and the Iridium with extended conduction orbitals significantly mixed by spin-orbit interactions. The coexistence and coupling of these two sublattices create a landscape for discovery and manipulation of quantum phenomena such as the topological Hall effect, massless conduction bands, and quantum criticality. Thin films allow extended control of the material system via symmetry-lowering effects such as strain. While bulk Pr2Ir2O7 shows a spontaneous hysteretic Hall effect below 1.5K, we observe the effect at elevated temperatures up to 15K in epitaxial thin films on (111) YSZ substrates synthesized via solid phase epitaxy. Similar to the bulk, the lack of observable long-range magnetic order in the thin films points to a topological origin. We use synchrotron-based element-specific x-ray diffraction (XRD) and x-ray magnetic circular dichroism (XMCD) to compare powders and thin films to attribute the spontaneous Hall effect in the films to localization of the Ir moments. We link the thin film Ir local moments to lattice distortions absent in the bulk-like powders. We conclude that the elevated-temperature spontaneous Hall effect is caused by the topological effect originating either from the Ir or Pr sublattice, with interaction strength enhanced by the Ir local moments. This spontaneous Hall effect with weak net moment highlights the effect of vanishingly small lattice distortions as a means to discover topological phenomena in metallic frustrated magnetic materials. △ Less

Submitted 27 December, 2019; originally announced December 2019.

Journal ref: Phys. Rev. B 101, 104405 (2020)

Magnetoelectric Coupling by Giant Piezoelectric Tensor Design

Authors: J. Irwin, S. Lindemann, W. Maeng, J. J. Wang, V. Vaithyanathan, J. M. Hu, L. Q. Chen, D. G. Schlom, C. B. Eom, M. S. Rzchowski

Abstract: Strain-coupled magnetoelectric (ME) phenomena in piezoelectric / ferromagnetic thin-film bilayers are a promising paradigm for sensors and information storage devices, where strain is utilized to manipulate the magnetization of the ferromagnetic film. In-plane magnetization rotation with an electric field across the film thickness has been challenging due to the virtual elimination of in-plane pie… ▽ More Strain-coupled magnetoelectric (ME) phenomena in piezoelectric / ferromagnetic thin-film bilayers are a promising paradigm for sensors and information storage devices, where strain is utilized to manipulate the magnetization of the ferromagnetic film. In-plane magnetization rotation with an electric field across the film thickness has been challenging due to the virtual elimination of in-plane piezoelectric strain by substrate clamping, and to the requirement of anisotropic in-plane strain in two-terminal devices. We have overcome both of these limitations by fabricating lithographically patterned devices with a piezoelectric membrane on a soft substrate platform, in which in-plane strain is freely generated, and a patterned edge constraint that transforms the nominally isotropic piezoelectric strain into the required uniaxial strain. We fabricated 500 nm thick, (001) oriented [Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_3$]$_{0.7}$-[PbTiO$_3$]$_{0.3}$ (PMN-PT) unclamped piezoelectric membranes with ferromagnetic Ni overlayers. Guided by analytical and numerical continuum elastic calculations, we designed and fabricated two-terminal devices exhibiting Ni magnetization rotation in response to an electric field across the PMN-PT. Similar membrane heterostructures could be used to apply designed strain patterns to many other materials systems to control properties such as superconductivity, band topology, conductivity, and optical response. △ Less

Submitted 8 January, 2019; originally announced January 2019.

Charge Density Wave Modulation in Superconducting BaPbO$_3$/BaBiO$_3$ Superlattices

Authors: D. T. Harris, N. Cambell, C. Di, J. -M. Park, L. Luo, H. Zhou, G. -Y. Kim, K. Song, 5 S. -Y. Choi, J. Wang, M. S. Rzchowski, C. B. Eom

Abstract: The isotropic, non-magnetic doped BaBiO$_3$ superconductors maintain some similarities to high-Tc cuprates, while also providing a cleaner system for isolating charge density wave (CDW) physics that commonly competes with superconductivity. Artificial layered superlattices offer the possibility of engineering the interaction between superconductivity and CDW. Here we stabilize a low temperature, f… ▽ More The isotropic, non-magnetic doped BaBiO$_3$ superconductors maintain some similarities to high-Tc cuprates, while also providing a cleaner system for isolating charge density wave (CDW) physics that commonly competes with superconductivity. Artificial layered superlattices offer the possibility of engineering the interaction between superconductivity and CDW. Here we stabilize a low temperature, fluctuating short range CDW order by using artificially layered epitaxial (BaPbO$_3$)$_{3m}$/(BaBiO$_3$)$_m$ (m = 1-10 unit cells) superlattices that is not present in the optimally doped BaPb$_{0.75}$Bi$_{0.25}$O$_3$ alloy with the same overall chemical formula. Charge transfer from BaBiO$_3$ to BaPbO$_3$ effectively dopes the former and suppresses the long range CDW, however as the short range CDW fluctuations strengthens at low temperatures charge appears to localize and superconductivity is weakened. The monolayer structural control demonstrated here provides compelling implications to access controllable, local density-wave orders absent in bulk alloys and manipulate phase competition in unconventional superconductors. △ Less

Submitted 20 December, 2018; originally announced December 2018.

Comments: 18 pages, 6 figures

Journal ref: Phys. Rev. B 101, 064509 (2020)

Anisotropic spin-orbit torque generation in epitaxial SrIrO3 by symmetry design

Authors: T. Nan, T. J. Anderson, J. Gibbons, K. Hwang, N. Campbell, H. Zhou, Y. Q. Dong, G. Y. Kim, N. Reynolds, X. J. Wang, N. X. Sun, S. Y. Choi, M. S. Rzchowski, Yong Baek Kim, D. C. Ralph, C. B. Eom

Abstract: Spin-orbit coupling (SOC), the interaction between the electron spin and the orbital angular momentum, can unlock rich phenomena at interfaces, in particular interconverting spin and charge currents. Conventional heavy metals have been extensively explored due to their strong SOC of conduction electrons. However, spin-orbit effects in classes of materials such as epitaxial 5d-electron transition m… ▽ More Spin-orbit coupling (SOC), the interaction between the electron spin and the orbital angular momentum, can unlock rich phenomena at interfaces, in particular interconverting spin and charge currents. Conventional heavy metals have been extensively explored due to their strong SOC of conduction electrons. However, spin-orbit effects in classes of materials such as epitaxial 5d-electron transition metal complex oxides, which also host strong SOC, remain largely unreported. In addition to strong SOC, these complex oxides can also provide the additional tuning knob of epitaxy to control the electronic structure and the engineering of spin-to-charge conversion by crystalline symmetry. Here, we demonstrate room-temperature generation of spin-orbit torque on a ferromagnet with extremely high efficiency via the spin-Hall effect in epitaxial metastable perovskite SrIrO3. We first predict a large intrinsic spin-Hall conductivity in orthorhombic bulk SrIrO3 arising from the Berry curvature in the electronic band structure. By manipulating the intricate interplay between SOC and crystalline symmetry, we control the spin-Hall torque ratio by engineering the tilt of the corner-sharing oxygen octahedra in perovskite SrIrO3 through epitaxial strain. This allows the presence of an anisotropic spin-Hall effect due to a characteristic structural anisotropy in SrIrO3 with orthorhombic symmetry. Our experimental findings demonstrate the heteroepitaxial symmetry design approach to engineer spin-orbit effects. We therefore anticipate that these epitaxial 5d transition-metal oxide thin films can be an ideal building block for low-power spintronics. △ Less

Submitted 20 August, 2018; originally announced August 2018.

Superconductivity-localization interplay and fluctuation magnetoresistance in epitaxial BaPb$_{1-x}$Bi$_x$O$_3$ thin films

Authors: David T. Harris, Neil Campbell, Reinhard Uecker, Mario Brützam, Darrell G. Schlom, Alex Levchenko, Mark S. Rzchowski, Chang-Beom Eom

Abstract: BaPb$_{1-x}$Bi$_x$O$_3$ is a superconductor, with transition temperature $T_c=11$ K, whose parent compound BaBiO$_3$ possess a charge ordering phase and perovskite crystal structure reminiscent of the cuprates. The lack of magnetism simplifies the BaPb$_{1-x}$Bi$_{x}$O$_3$ phase diagram, making this system an ideal platform for contrasting high-$T_c$ systems with isotropic superconductors. Here we… ▽ More BaPb$_{1-x}$Bi$_x$O$_3$ is a superconductor, with transition temperature $T_c=11$ K, whose parent compound BaBiO$_3$ possess a charge ordering phase and perovskite crystal structure reminiscent of the cuprates. The lack of magnetism simplifies the BaPb$_{1-x}$Bi$_{x}$O$_3$ phase diagram, making this system an ideal platform for contrasting high-$T_c$ systems with isotropic superconductors. Here we use high-quality epitaxial thin films and magnetotransport to demonstrate superconducting fluctuations that extend well beyond $T_c$. For the thickest films (thickness above $\sim100$ nm) this region extends to $\sim27$ K, well above the bulk $T_c$ and remarkably close to the higher $T_c$ of Ba$_{1-x}$K$_x$BiO$_3$ ($T_c=31$ K). We drive the system through a superconductor-insulator transition by decreasing thickness and find the observed $T_c$ correlates strongly with disorder. This material manifests strong fluctuations across a wide range of thicknesses, temperatures, and disorder presenting new opportunities for understanding the precursor of superconductivity near the 2D-3D dimensionality crossover. △ Less

Submitted 23 March, 2018; v1 submitted 11 January, 2018; originally announced January 2018.

Comments: 20 pages, 8 figures

Journal ref: Phys. Rev. Materials 2, 041801 (2018)

Observation of magnetic vortex pairs at room temperature in a planar α-Fe2O3/Co heterostructure

Authors: F. P. Chmiel, N. Waterfield Price, R. D. Johnson, A. D. Lamirand, J. Schad, G. van der Laan, D. T. Harris, J. Irwin, M. S. Rzchowski, C. -B. Eom, P. G. Radaelli

Abstract: Vortices are among the simplest topological structures, and occur whenever a flow field `whirls' around a one-dimensional core. They are ubiquitous to many branches of physics, from fluid dynamics to superconductivity and superfluidity, and are even predicted by some unified theories of particle interactions, where they might explain some of the largest-scale structures seen in today's Universe. I… ▽ More Vortices are among the simplest topological structures, and occur whenever a flow field `whirls' around a one-dimensional core. They are ubiquitous to many branches of physics, from fluid dynamics to superconductivity and superfluidity, and are even predicted by some unified theories of particle interactions, where they might explain some of the largest-scale structures seen in today's Universe. In the crystalline state, vortex formation is rare, since it is generally hampered by long-range interactions: in ferroic materials (ferromagnetic and ferroelectric), vortices are only observed when the effects of the dipole-dipole interaction is modified by confinement at the nanoscale, or when the parameter associated with the vorticity does not couple directly with strain. Here, we present the discovery of a novel form of vortices in antiferromagnetic (AFM) hematite ($α$-Fe$_2$O$_3$) epitaxial films, in which the primary whirling parameter is the staggered magnetisation. Remarkably, ferromagnetic (FM) topological objects with the same vorticity and winding number of the $α$-Fe$_2$O$_3$ vortices are imprinted onto an ultra-thin Co ferromagnetic over-layer by interfacial exchange. Our data suggest that the ferromagnetic vortices may be merons (half-skyrmions, carrying an out-of-plane core magnetisation), and indicate that the vortex/meron pairs can be manipulated by the application of an in-plane magnetic field, H$_{\parallel}$, giving rise to large-scale vortex-antivortex annihilation. △ Less

Submitted 29 March, 2018; v1 submitted 8 January, 2018; originally announced January 2018.

Comments: 16 pages, 4 figures

Localization of Two-dimensional Electron Gas in LaAlO3/SrTiO3 Heterostructures

Authors: T. Hernandez, C. W. Bark, D. A. Felker, C. B. Eom, M. S. Rzchowski

Abstract: We report strong localization of 2D electron gas in LaAlO3 / SrTiO3 epitaxial thin-film heterostructures grown on (LaAlO3)0.3-(Sr2AlTaO3)0.7 substrates by using pulsed laser deposition with in-situ reflection high-energy electron diffraction. Using longitudinal and transverse magnetotransport measurements, we have determined that disorder at the interface influences the conduction behavior, and th… ▽ More We report strong localization of 2D electron gas in LaAlO3 / SrTiO3 epitaxial thin-film heterostructures grown on (LaAlO3)0.3-(Sr2AlTaO3)0.7 substrates by using pulsed laser deposition with in-situ reflection high-energy electron diffraction. Using longitudinal and transverse magnetotransport measurements, we have determined that disorder at the interface influences the conduction behavior, and that increasing the carrier concentration by growing at lower oxygen partial pressure changes the conduction from strongly localized at low carrier concentration to metallic at higher carrier concentration, with indications of weak localization. We interpret this behavior in terms of a changing occupation of Ti 3d bands near the interface, each with a different spatial extent and susceptibility to localization by disorder, and differences in carrier confinement due to misfit strain and point defects. △ Less

Submitted 14 October, 2011; originally announced October 2011.

Comments: 12 pages, 4 figures

Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain

Authors: C. W. Bark, D. A. Felker, Y. Wang, Y. Zhang, H. W. Jang, C. M. Folkman, J. W. Park, S. H. Baek, X. Q. Pan, E. Y. Tsymbal, M. S. Rzchowski, C. B. Eom

Abstract: Recently a metallic state was discovered at the interface between insulating oxides, most notably LaAlO3 and SrTiO3. Properties of this two-dimensional electron gas (2DEG) have attracted significant interest due to its potential applications in nanoelectronics. Control over this carrier density and mobility of the 2DEG is essential for applications of these novel systems, and may be achieved by ep… ▽ More Recently a metallic state was discovered at the interface between insulating oxides, most notably LaAlO3 and SrTiO3. Properties of this two-dimensional electron gas (2DEG) have attracted significant interest due to its potential applications in nanoelectronics. Control over this carrier density and mobility of the 2DEG is essential for applications of these novel systems, and may be achieved by epitaxial strain. However, despite the rich nature of strain effects on oxide materials properties, such as ferroelectricity, magnetism, and superconductivity, the relationship between the strain and electrical properties of the 2DEG at the LaAlO3/SrTiO3 heterointerface remains largely unexplored. Here, we use different lattice constant single crystal substrates to produce LaAlO3/SrTiO3 interfaces with controlled levels of biaxial epitaxial strain. We have found that tensile strained SrTiO3 destroys the conducting 2DEG, while compressively strained SrTiO3 retains the 2DEG, but with a carrier concentration reduced in comparison to the unstrained LaAlO3/SrTiO3 interface. We have also found that the critical LaAlO3 overlayer thickness for 2DEG formation increases with SrTiO3 compressive strain. Our first-principles calculations suggest that a strain-induced electric polarization in the SrTiO3 layer is responsible for this behavior. It is directed away from the interface and hence creates a negative polarization charge opposing that of the polar LaAlO3 layer. This both increases the critical thickness of the LaAlO3 layer, and reduces carrier concentration above the critical thickness, in agreement with our experimental results. Our findings suggest that epitaxial strain can be used to tailor 2DEGs properties of the LaAlO3/SrTiO3 heterointerface. △ Less

Submitted 17 November, 2010; originally announced November 2010.

Conductance asymmetry in point-contacts on epitaxial thin films of Ba(Fe$_{0.92}$Co$_{0.08}$)$_2$As$_2$

Authors: Manan Mehta, Goutam Sheet, D. A. Dikin, S. Lee, C. W. Bark, J. Jiang, J. D. Weiss, E. E. Hellstrom, M. S. Rzchowski, C. B. Eom, V. Chandrasekhar

Abstract: Point-contact spectroscopy is a powerful tool for probing superconductors. One of the most common observations in the point-contact spectra on the recently discovered ferropnictide superconductors is a large conductance asymmetry with respect to voltage across the point-contact. In this paper we show that the antisymmetric part of the point-contact spectrum between a silver tip and an epitaxial th… ▽ More Point-contact spectroscopy is a powerful tool for probing superconductors. One of the most common observations in the point-contact spectra on the recently discovered ferropnictide superconductors is a large conductance asymmetry with respect to voltage across the point-contact. In this paper we show that the antisymmetric part of the point-contact spectrum between a silver tip and an epitaxial thin film of Ba(Fe$_{0.92}$Co$_{0.08}$)$_2$As$_2$ shows certain unique features. These features have an interesting evolution with increasing temperature up to a temperature that is 30% larger than the critical temperature $T_c$ of the superconductor. We argue that this evolution can be associated with the rich normal state properties of these materials. △ Less

Submitted 14 June, 2010; v1 submitted 10 May, 2010; originally announced May 2010.

Comments: 4 pages, 2 figures

Journal ref: Appl. Phys. Lett. 97, 012503 (2010)

Phase-incoherent superconducting pairs in the normal state of Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$

Authors: Goutam Sheet, Manan Mehta, D. A. Dikin, S. Lee, C. W. Bark, J. Jiang, J. D. Weiss, E. E. Hellstrom, M. S. Rzchowski, C. B. Eom, V. Chandrasekhar

Abstract: The normal state properties of the recently discovered ferropnictide superconductors might hold the key to understanding their exotic superconductivity. Using point-contact spectroscopy we show that Andreev reflection between an epitaxial thin film of Ba(Fe$_{0.92}$Co$_{0.08}$)$_2$As$_2$ and a silver tip can be seen in the normal state of the film up to temperature $T\sim1.3T_c$, where $T_c$ is th… ▽ More The normal state properties of the recently discovered ferropnictide superconductors might hold the key to understanding their exotic superconductivity. Using point-contact spectroscopy we show that Andreev reflection between an epitaxial thin film of Ba(Fe$_{0.92}$Co$_{0.08}$)$_2$As$_2$ and a silver tip can be seen in the normal state of the film up to temperature $T\sim1.3T_c$, where $T_c$ is the critical temperature of the superconductor. Andreev reflection far above $T_c$ can be understood only when superconducting pairs arising from strong fluctuation of the phase of the complex superconducting order parameter exist in the normal state. Our results provide spectroscopic evidence of phase-incoherent superconducting pairs in the normal state of the ferropnictide superconductors. △ Less

Submitted 27 April, 2010; originally announced April 2010.

Comments: 4 pages including 3 figures

Journal ref: Phys. Rev. Lett. 105, 167003 (2010)

Epitaxial magnetic perovskite nanostructures

Authors: Dmitry Ruzmetov, Yongho Seo, Land J. Belenky, D. M. Kim, Xianglin Ke, Haiping Sun, Venkat Chandrasekhar, Chang-Beom Eom, Mark S. Rzchowski, Xiaoqing Pan

Abstract: Precise arrays of sub-100 nm diameter nanodots are fabricated from magnetic oxide perovskites with the total coverage area up to 5 mm2. Epitaxial single crystal structure of the nanodots is demonstrated by cross-sectional TEM. Low temperature MFM study confirmed the ferromagnetism of the produced particles. Precise arrays of sub-100 nm diameter nanodots are fabricated from magnetic oxide perovskites with the total coverage area up to 5 mm2. Epitaxial single crystal structure of the nanodots is demonstrated by cross-sectional TEM. Low temperature MFM study confirmed the ferromagnetism of the produced particles. △ Less

Submitted 12 July, 2005; originally announced July 2005.

Positive exchange bias in ferromagnetic La0.67Sr0.33MnO3 / SrRuO3 bilayers

Authors: X. Ke, M. S. Rzchowski, L. J. Belenky, C. B. Eom

Abstract: Epitaxial La0.67Sr0.33MnO3 (LSMO)/ SrRuO3 (SRO) ferromagnetic bilayers have been grown on (001) SrTiO3 (STO) substrates by pulsed laser deposition with atomic layer control. We observe a shift in the magnetic hysteresis loop of the LSMO layer in the same direction as the applied biasing field (positive exchange bias). The effect is not present above the Curie temperature of the SRO layer (), and… ▽ More Epitaxial La0.67Sr0.33MnO3 (LSMO)/ SrRuO3 (SRO) ferromagnetic bilayers have been grown on (001) SrTiO3 (STO) substrates by pulsed laser deposition with atomic layer control. We observe a shift in the magnetic hysteresis loop of the LSMO layer in the same direction as the applied biasing field (positive exchange bias). The effect is not present above the Curie temperature of the SRO layer (), and its magnitude increases rapidly as the temperature is lowered below . The direction of the shift is consistent with an antiferromagnetic exchange coupling between the ferromagnetic LSMO layer and the ferromagnetic SRO layer. We propose that atomic layer charge transfer modifies the electronic state at the interface, resulting in the observed antiferromagnetic interfacial exchange coupling. △ Less

Submitted 15 May, 2004; originally announced May 2004.

Comments: accepted to Applied Physics Letters

Electronic inhomogeneity at magnetic domain walls in strongly-correlated systems

Authors: M. S. Rzchowski, Robert Joynt

Abstract: We show that nano-scale variations of the order parameter in strongly-correlated systems can induce local spatial regions such as domain walls that exhibit electronic properties representative of a different, but nearby, part of the phase diagram. This is done by means of a Landau-Ginzburg analysis of a metallic ferromagnetic system near an antiferromagnetic phase boundary. The strong spin gradi… ▽ More We show that nano-scale variations of the order parameter in strongly-correlated systems can induce local spatial regions such as domain walls that exhibit electronic properties representative of a different, but nearby, part of the phase diagram. This is done by means of a Landau-Ginzburg analysis of a metallic ferromagnetic system near an antiferromagnetic phase boundary. The strong spin gradients at a wall between domains of different spin orientation drive the formation of a new type of domain wall, where the central core is an insulating antiferromagnet, and connects two metallic ferromagnetic domains. We calculate the charge transport properties of this wall, and find that its resistance is large enough to account for recent experimental results in colossal magnetoresistance materials. The technological implications of this finding for switchable magnetic media are discussed. △ Less

Submitted 11 April, 2003; originally announced April 2003.

Comments: Version submitted to Physical Review Letters, except for minor revisions to references

MgB2 Energy Gap Determination by Scanning Tunneling Spectroscopy

Authors: T. W. Heitmann, S. D. Bu, D. M. Kim, J. H. Choi, J. Giencke, C. B. Eom, K. A. Regan, N. Rogado, M. A. Hayward, T. He, J. S. Slusky, P. Khalifah, M. Haas, R. J. Cava, D. C Larbalestier, M. S. Rzchowski

Abstract: We report scanning tunneling spectroscopy (STS) measurements of the gap properties of both ceramic MgB2 and c-axis oriented epitaxial MgB2 thin films. Both show a temperature dependent zero bias conductance peak and evidence for two superconducting gaps. We report tunneling spectroscopy of superconductor-insulator-superconductor (S-I-S) junctions formed in two ways in addition to normal metal-in… ▽ More We report scanning tunneling spectroscopy (STS) measurements of the gap properties of both ceramic MgB2 and c-axis oriented epitaxial MgB2 thin films. Both show a temperature dependent zero bias conductance peak and evidence for two superconducting gaps. We report tunneling spectroscopy of superconductor-insulator-superconductor (S-I-S) junctions formed in two ways in addition to normal metal-insulator-superconductor (N-I-S) junctions. We find a gap delta=2.3-2.8 meV, with spectral features and temperature dependence that are consistent between S-I-S junction types. In addition, we observe evidence of a second, larger gap, delta=7.2 meV, consistent with a proposed two-band model. △ Less

Submitted 29 September, 2003; v1 submitted 9 December, 2002; originally announced December 2002.

Comments: 24 pages, 8 figures Text changes and corrected fits in figures Submitted to Superconductor Science and Technology

Flux flow of Abrikosov-Josephson vortices along grain boundaries in high-temperature superconductors

Authors: A. Gurevich, M. S. Rzchowski, G. Daniels, S. Patnaik, B. M. Hinaus, F. Carillo, F. Tafuri, D. C. Larbalestier

Abstract: We show that low-angle grain boundaries (GB) in high-temperature superconductors exhibit intermediate Abrikosov vortices with Josephson cores, whose length $l$ along GB is smaller that the London penetration depth, but larger than the coherence length. We found an exact solution for a periodic vortex structure moving along GB in a magnetic field $H$ and calculated the flux flow resistivity… ▽ More We show that low-angle grain boundaries (GB) in high-temperature superconductors exhibit intermediate Abrikosov vortices with Josephson cores, whose length $l$ along GB is smaller that the London penetration depth, but larger than the coherence length. We found an exact solution for a periodic vortex structure moving along GB in a magnetic field $H$ and calculated the flux flow resistivity $R_F(H)$, and the nonlinear voltage-current characteristics. The predicted $R_F(H)$ dependence describes well our experimental data on $7^{\circ}$ unirradiated and irradiated $YBa_2Cu_3O_7$ bicrystals, from which the core size $l(T)$, and the intrinsic depairing density $J_b(T)$ on nanoscales of few GB dislocations were measured for the first time. The observed temperature dependence of $J_b(T)=J_{b0}(1-T/T_c)^2$ indicates a significant order parameter suppression in current channels between GB dislocation cores. △ Less

Submitted 15 January, 2002; originally announced January 2002.

Comments: 5 pages 5 figures. Phys. Rev. Lett. (accepted)

Phase transitions in a Kagome lattice of Josephson junctions

Authors: M. S. Rzchowski

Abstract: We investigate the nature of the phase transition in Josephson junctions arranged on a Kagome lattice. We find that an applied magnetic field corresponding to 1/2 flux quanta per elementary triangle results in a pi phase shift in the current phase relation for all bonds, resulting in an XY antiferromagnet. This corresponds to the order-from-disorder selected highly-degenerate coplanar state of t… ▽ More We investigate the nature of the phase transition in Josephson junctions arranged on a Kagome lattice. We find that an applied magnetic field corresponding to 1/2 flux quanta per elementary triangle results in a pi phase shift in the current phase relation for all bonds, resulting in an XY antiferromagnet. This corresponds to the order-from-disorder selected highly-degenerate coplanar state of the more extensively studied Heisenberg Kagome antiferromagnet. Using an histogram Monte-Carlo analysis, we observe a phase transition at 0.078 of the coupling energy. We find that the jump in the superfluid density at the transition temperature, determined from a finite-size scaling analysis of the magnetization fluctuations, retains its universal value within the Kosterlitz-Thouless scenario despite the well-known degeneracy of the low-temperature phase. This universal jump, combined with the dramatically suppressed transition temperature, point to a very strong renormalization of the spin stiffness just below the transition temperature. We also observe a sequence of ground states corresponding to flux quanta per elementary triangle of 1/2, 3/8, 1/4, 1/8, and 0 that, unlike ground states of other lattices, consist of currents of equal magnitude circulating around each elementary triangle in the structure. This sequence of structurally similar ground states will permit a detailed analysis of the dependence of transition temperature on frustration. △ Less

Submitted 30 August, 1995; originally announced August 1995.

Comments: 10 pages ps, 6 ps figures, one uuencoded, compressed tar file