Showing 1–50 of 63 results for author: Davydov, A

Single-Phase L1$_{0}$-Ordered High Entropy Thin Films with High Magnetic Anisotropy

Authors: Willie B. Beeson, Dinesh Bista, Huairuo Zhang, Sergiy Krylyuk, Albert V. Davydov, Gen Yin, Kai Liu

Abstract: The vast high entropy alloy (HEA) composition space is promising for discovery of new material phases with unique properties. We explore the potential to achieve rare-earth-free high magnetic anisotropy materials in single-phase HEA thin films. Thin films of FeCoNiMnCu sputtered on thermally oxidized Si/SiO$_{2}$ substrates at room temperature are magnetically soft, with a coercivity on the order… ▽ More The vast high entropy alloy (HEA) composition space is promising for discovery of new material phases with unique properties. We explore the potential to achieve rare-earth-free high magnetic anisotropy materials in single-phase HEA thin films. Thin films of FeCoNiMnCu sputtered on thermally oxidized Si/SiO$_{2}$ substrates at room temperature are magnetically soft, with a coercivity on the order of 10 Oe. After post-deposition rapid thermal annealing (RTA), the films exhibit a single face-centered-cubic phase, with an almost 40-fold increase in coercivity. Inclusion of 50 at.% Pt in the film leads to ordering of a single L1$_{0}$ high entropy intermetallic phase after RTA, along with high magnetic anisotropy and 3 orders of magnitude coercivity increase. These results demonstrate a promising HEA approach to achieve high magnetic anisotropy materials using RTA. △ Less

Submitted 24 May, 2024; v1 submitted 11 November, 2023; originally announced November 2023.

Comments: 28 pages, including 4 figures and 6 pages of supporting information (5 SI figures and 2 SI tables)

Journal ref: Advanced Science, 2308574 (2024)

Phonon States in NbTe$_4$ and TaTe$_4$ Quasi-One-Dimensional van der Waals Crystals

Authors: Zahra Ebrahim Nataj, Fariborz Kargar, Sergiy Krylyuk, Topojit Debnath, Maedeh Taheri, Subhajit Ghosh, Huairuo Zhang, Albert V. Davydov, Roger K. Lake, Alexander A. Balandin

Abstract: We report the results of polarization-dependent Raman spectroscopy of phonon states in single-crystalline quasi-one-dimensional NbTe$_4$ and TaTe$_4$ van der Waals materials. The measurements were conducted in the wide temperature range from 80 K to 560 K. Our results show that although both materials have identical crystal structures and symmetries, there is a drastic difference in the intensity… ▽ More We report the results of polarization-dependent Raman spectroscopy of phonon states in single-crystalline quasi-one-dimensional NbTe$_4$ and TaTe$_4$ van der Waals materials. The measurements were conducted in the wide temperature range from 80 K to 560 K. Our results show that although both materials have identical crystal structures and symmetries, there is a drastic difference in the intensity of their Raman spectra. While TaTe4 exhibits well-defined peaks through the examined frequency and temperature ranges, NbTe4 reveals extremely weak Raman signatures. The measured spectral positions of the phonon peaks agree with the phonon band structure calculated using the density-functional theory. We offer possible reasons for the in-tensity differences between the two van der Waals materials. Our results provide insights into the phonon properties of NbTe$_4$ and TaTe$_4$ van der Waals materials and indicate the potential of Raman spectroscopy for studying charge-density-wave quantum condensate phases. △ Less

Submitted 5 November, 2023; originally announced November 2023.

Comments: 24 pages; 6 figures; 1 table

Ultra-fast Vacancy Migration: A Novel Approach for Synthesizing Sub-10 nm Crystalline Transition Metal Dichalcogenide Nanocrystals

Authors: Pawan Kumar, Jiazheng Chen, Andrew C. Meng, Wei-Chang D. Yang, Surendra B. Anantharaman, James P. Horwath, Juan C. Idrobo, Himani Mishra, Yuanyue Liu, Albert V. Davydov, Eric A. Stach, Deep Jariwala

Abstract: Two-dimensional materials, such as transition metal dichalcogenides (TMDCs), have the potential to revolutionize the field of electronics and photonics due to their unique physical and structural properties. This research presents a novel method for synthesizing crystalline TMDCs crystals with < 10 nm size using ultra-fast migration of vacancies at elevated temperatures. Through in-situ and ex-sit… ▽ More Two-dimensional materials, such as transition metal dichalcogenides (TMDCs), have the potential to revolutionize the field of electronics and photonics due to their unique physical and structural properties. This research presents a novel method for synthesizing crystalline TMDCs crystals with < 10 nm size using ultra-fast migration of vacancies at elevated temperatures. Through in-situ and ex-situ processing and using atomic-level characterization techniques, we analyze the shape, size, crystallinity, composition, and strain distribution of these nanocrystals. These nanocrystals exhibit electronic structure signatures that differ from the 2D bulk i.e., uniform mono and multilayers. Further, our in-situ, vacuum-based synthesis technique allows observation and comparison of defect and phase evolution in these crystals formed under van der Waals heterostructure confinement versus unconfined conditions. Overall, this research demonstrates a solid-state route to synthesizing uniform nanocrystals of TMDCs and lays the foundation for materials science in confined 2D spaces under extreme conditions. △ Less

Submitted 10 July, 2023; originally announced July 2023.

Comments: MS+SI

Giant Hall Switching by Surface-State-Mediated Spin-Orbit Torque in a Hard Ferromagnetic Topological Insulator

Authors: Lixuan Tai, Haoran He, Su Kong Chong, Huairuo Zhang, Hanshen Huang, Gang Qiu, Yaochen Li, Hung-Yu Yang, Ting-Hsun Yang, Xiang Dong, Yuxing Ren, Bingqian Dai, Tao Qu, Qingyuan Shu, Quanjun Pan, Peng Zhang, Fei Xue, Jie Li, Albert V. Davydov, Kang L. Wang

Abstract: Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin-orbit torque (SOT) and manipulate the magnetization with their unique topological surface states with ultra-high efficiency. Here, we demonstrate efficient SOT switching of a hard MTI, V-doped (Bi,Sb)2Te3 (VBST) with a large coercive field that can prevent the influence of an external magnetic fie… ▽ More Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin-orbit torque (SOT) and manipulate the magnetization with their unique topological surface states with ultra-high efficiency. Here, we demonstrate efficient SOT switching of a hard MTI, V-doped (Bi,Sb)2Te3 (VBST) with a large coercive field that can prevent the influence of an external magnetic field. A giant switched anomalous Hall resistance of 9.2 $kΩ$ is realized, among the largest of all SOT systems. The SOT switching current density can be reduced to $2.8\times10^5 A/cm^2$. Moreover, as the Fermi level is moved away from the Dirac point by both gate and composition tuning, VBST exhibits a transition from edge-state-mediated to surface-state-mediated transport, thus enhancing the SOT effective field to $1.56\pm 0.12 T/ (10^6 A/cm^2)$ and the interfacial charge-to-spin conversion efficiency to $3.9\pm 0.3 nm^{-1}$. The findings establish VBST as an extraordinary candidate for energy-efficient magnetic memory devices. △ Less

Submitted 12 May, 2024; v1 submitted 8 June, 2023; originally announced June 2023.

Ultracompact single-photon sources of linearly polarized vortex beams

Authors: Xujing Liu, Yinhui Kan, Shailesh Kumar, Liudmilla F. Kulikova, Valery A. Davydov, Viatcheslav N. Agafonov, Changying Zhao, Sergey I. Bozhevolnyi

Abstract: Ultracompact chip-integrated single-photon sources of collimated beams with polarizationencoded states are crucial for integrated quantum technologies. However, most of currently available single-photon sources rely on external bulky optical components to shape the polarization and phase front of emitted photon beams. Efficient integration of quantum emitters with beam shaping and polarization enc… ▽ More Ultracompact chip-integrated single-photon sources of collimated beams with polarizationencoded states are crucial for integrated quantum technologies. However, most of currently available single-photon sources rely on external bulky optical components to shape the polarization and phase front of emitted photon beams. Efficient integration of quantum emitters with beam shaping and polarization encoding functionalities remains so far elusive. Here, we present ultracompact single-photon sources of linearly polarized vortex beams based on chip-integrated quantum emitter-coupled metasurfaces, which are meticulously designed by fully exploiting the potential of nanobrick arrayed metasurfaces. We first demonstrate on-chip single-photon generation of high-purity linearly polarized vortex beams with prescribed topological charges of -1, 0, and +1. We further realize multiplexing of single-photon emission channels with orthogonal linear polarizations carrying different topological charges and demonstrate their entanglement. Our work illustrates the potential and feasibility of ultracompact quantum emitter-coupled metasurfaces as a new quantum optics platform for realizing chip-integrated high-dimensional single-photon sources. △ Less

Submitted 14 May, 2023; originally announced May 2023.

Comments: 17 pages and 4 figures in the main text; 22 pages and 14 figures in supplementary information

Nitrogen-Based Magneto-Ionic Manipulation of Exchange Bias in CoFe/MnN Heterostructures

Authors: Christopher J. Jensen, Alberto Quintana, Patrick Quarterman, Alexander J. Grutter, Purnima P. Balakrishnan, Huairuo Zhang, Albert V. Davydov, Xixiang Zhang, Kai Liu

Abstract: Electric field control of the exchange bias effect across ferromagnet/antiferromagnet (FM/AF) interfaces has offered exciting potentials for low-energy-dissipation spintronics. In particular, the solid state magneto-ionic means is highly appealing as it may allow reconfigurable electronics by transforming the all-important FM/AF interfaces through ionic migration. In this work, we demonstrate an a… ▽ More Electric field control of the exchange bias effect across ferromagnet/antiferromagnet (FM/AF) interfaces has offered exciting potentials for low-energy-dissipation spintronics. In particular, the solid state magneto-ionic means is highly appealing as it may allow reconfigurable electronics by transforming the all-important FM/AF interfaces through ionic migration. In this work, we demonstrate an approach that combines the chemically induced magneto-ionic effect with the electric field driving of nitrogen in the Ta/Co$_{0.7}$Fe$_{0.3}$/MnN/Ta structure to electrically manipulate exchange bias. Upon field-cooling the heterostructure, ionic diffusion of nitrogen from MnN into the Ta layers occurs. A significant exchange bias of 618 Oe at 300 K and 1484 Oe at 10 K is observed, which can be further enhanced after a voltage conditioning by 5% and 19%, respectively. This enhancement can be reversed by voltage conditioning with an opposite polarity. Nitrogen migration within the MnN layer and into the Ta capping layer cause the enhancement in exchange bias, which is observed in polarized neutron reflectometry studies. These results demonstrate an effective nitrogen-ion based magneto-ionic manipulation of exchange bias in solid-state devices. △ Less

Submitted 25 March, 2023; originally announced March 2023.

Comments: 28 pages, 4 figures; supporting information: 17 pages, 11 figures

Journal ref: ACS Nano, 17, 6745-6753 (2023)

Scattering holography designed metasurfaces for channeling single-photon emission

Authors: Danylo Komisar, Shailesh Kumar, Yinhui Kan, Chao Meng, Liudmilla F. Kulikova, Valery A. Davydov, Viatcheslav N. Agafonov, Sergey I. Bozhevolnyi

Abstract: Channelling single-photon emission in multiple well-defined directions and simultaneously controlling its polarization characteristics is highly desirable for numerous quantum technology applications. We show that this can be achieved by using quantum emitters (QEs) nonradiatively coupled to surface plasmon polaritons (SPPs), which are scattered into outgoing free-propagating waves by appropriatel… ▽ More Channelling single-photon emission in multiple well-defined directions and simultaneously controlling its polarization characteristics is highly desirable for numerous quantum technology applications. We show that this can be achieved by using quantum emitters (QEs) nonradiatively coupled to surface plasmon polaritons (SPPs), which are scattered into outgoing free-propagating waves by appropriately designed metasurfaces. The QE-coupled metasurface design is based on the scattering holography approach with radially diverging SPPs as reference waves. Using holographic metasurfaces fabricated around nanodiamonds with single Ge vacancy centers, we experimentally demonstrate on-chip integrated efficient generation of two well-collimated single-photon beams propagating along different 15-degree off-normal directions with orthogonal linear polarizations. △ Less

Submitted 6 March, 2023; originally announced March 2023.

Concurrent Ferromagnetism and Superconductivity in Fe(Te,Se) van der Waals Josephson Junctions

Authors: Gang Qiu, Hung-Yu Yang, Lunhui Hu, Huairuo Zhang, Chih-Yen Chen, Yanfeng Lyu, Christopher Eckberg, Peng Deng, Sergiy Krylyuk, Albert V. Davydov, Ruixing Zhang, Kang L. Wang

Abstract: Ferromagnetism and superconductivity are two key ingredients to create non-Abelian quasiparticle excitations that are expected as building blocks to construct topological quantum computers. Adversely, ferromagnetism and superconductivity are typically also two hostile orderings competing to align spins in different configurations, making the material design and experimental implementation extremel… ▽ More Ferromagnetism and superconductivity are two key ingredients to create non-Abelian quasiparticle excitations that are expected as building blocks to construct topological quantum computers. Adversely, ferromagnetism and superconductivity are typically also two hostile orderings competing to align spins in different configurations, making the material design and experimental implementation extremely challenging. Recently, iron-based superconductor Fe(Te,Se) has emerged as a connate topological superconductor (TSC), which differentiates itself from other hybrid TSCs by self-proximitizing its Dirac surface states with bulk superconductivity. So far, the efforts to search for Majorana states in this material are prevalently focused on spectroscopy techniques. In this paper, we present the global transport signature of interfacial magnetism coexisting with superconductivity. Time-reversal symmetry breaking superconducting states are confirmed through device level transport measurements for the first time in a van der Waals (vdW) Josephson junction structure. Magnetic hysteresis is observed in this device scheme, which only appears below the superconducting critical temperature, leading to potential Fulde-Ferrell (FF) superconducting pairing mechanisms. The 0-π phase mixing in the Fraunhofer patterns pinpoints the ferromagnetic state dwelling on the surface. Furthermore, a stochastic field-free superconducting diode effect also confirms the spontaneous time-reversal symmetry breaking which reflects the behavior of the ferromagnetism. Our work paves a new way to explore topological superconductivity in iron-based superconductors for future high Tc fault-tolerant qubit implementations from a device perspective. △ Less

Submitted 11 October, 2023; v1 submitted 1 March, 2023; originally announced March 2023.

Comments: 23 pages, 5 figures

Rydberg Excitons and Trions in Monolayer MoTe$_2$

Authors: Souvik Biswas, Aurélie Champagne, Jonah B. Haber, Supavit Pokawanvit, Joeson Wong, Hamidreza Akbari, Sergiy Krylyuk, Kenji Watanabe, Takashi Taniguchi, Albert V. Davydov, Zakaria Y. Al Balushi, Diana Y. Qiu, Felipe H. da Jornada, Jeffrey B. Neaton, Harry A. Atwater

Abstract: Monolayer transition metal dichalcogenide (TMDC) semiconductors exhibit strong excitonic optical resonances which serve as a microscopic, non-invasive probe into their fundamental properties. Like the hydrogen atom, such excitons can exhibit an entire Rydberg series of resonances. Excitons have been extensively studied in most TMDCs (MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$), but detailed exploration… ▽ More Monolayer transition metal dichalcogenide (TMDC) semiconductors exhibit strong excitonic optical resonances which serve as a microscopic, non-invasive probe into their fundamental properties. Like the hydrogen atom, such excitons can exhibit an entire Rydberg series of resonances. Excitons have been extensively studied in most TMDCs (MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$), but detailed exploration of excitonic phenomena has been lacking in the important TMDC material molybdenum ditelluride (MoTe$_2$). Here, we report an experimental investigation of excitonic luminescence properties of monolayer MoTe$_2$ to understand the excitonic Rydberg series, up to 3s. We report significant modification of emission energies with temperature (4K to 300K), quantifying the exciton-phonon coupling. Furthermore, we observe a strongly gate-tunable exciton-trion interplay for all the Rydberg states governed mainly by free-carrier screening, Pauli blocking, and band-gap renormalization in agreement with the results of first-principles GW plus Bethe-Salpeter equation approach calculations. Our results help bring monolayer MoTe$_2$ closer to its potential applications in near-infrared optoelectronics and photonic devices. △ Less

Submitted 7 February, 2023; originally announced February 2023.

Comments: 5 figures (main text)

Sub-to-super-Poissonian photon statistics in cathodoluminescence of color center ensembles in isolated diamond crystals

Authors: Saskia Fiedler, Sergii Morozov, Danylo Komisar, Evgeny A. Ekimov, Liudmila F. Kulikova, Valery A. Davydov, Viatcheslav N. Agafonov, Shailesh Kumar, Christian Wolff, Sergey I. Bozhevolnyi, N. Asger Mortensen

Abstract: Impurity-vacancy centers in diamond offer a new class of robust photon sources with versatile quantum properties. While individual color centers commonly act as single-photon sources, their ensembles have been theoretically predicted to have tunable photon-emission statistics. Importantly, the particular type of excitation affects the emission properties of a color center ensemble within a diamond… ▽ More Impurity-vacancy centers in diamond offer a new class of robust photon sources with versatile quantum properties. While individual color centers commonly act as single-photon sources, their ensembles have been theoretically predicted to have tunable photon-emission statistics. Importantly, the particular type of excitation affects the emission properties of a color center ensemble within a diamond crystal. While optical excitation favors non-synchronized excitation of color centers within an ensemble, electron-beam excitation can synchronize the emitters and thereby provides a control of the second-order correlation function $g_2(0)$. In this letter, we demonstrate experimentally that the photon stream from an ensemble of color centers can exhibit $g_2(0)$ both above and below unity. Such a photon source based on an ensemble of few color centers in a diamond crystal provides a highly tunable platform for informational technologies operating at room temperature. △ Less

Submitted 7 February, 2023; originally announced February 2023.

Journal ref: Nanophotonics 12, 2231 (2023)

Specifics of the Elemental Excitations in "True One-Dimensional" MoI$_3$ van der Waals Nanowires

Authors: Fariborz Kargar, Zahra Barani, Nicholas R. Sesing, Thuc T. Mai, Topojit Debnath, Huairuo Zhang, Yuhang Liu, Yanbing Zhu, Subhajit Ghosh, Adam J. Biacchi, Felipe H. da Jornada, Ludwig Bartels, Tehseen Adel, Angela R. Hight Walker, Albert V. Davydov, Tina T. Salguero, Roger K. Lake, Alexander A. Balandin

Abstract: We report on the temperature evolution of the polarization-dependent Raman spectrum of exfoliated MoI$_3$, a van der Waals material with a "true one-dimensional" crystal structure that can be exfoliated to individual atomic chains. The temperature evolution of several Raman features reveals anomalous behavior suggesting a phase transition of a magnetic origin. Theoretical considerations indicate t… ▽ More We report on the temperature evolution of the polarization-dependent Raman spectrum of exfoliated MoI$_3$, a van der Waals material with a "true one-dimensional" crystal structure that can be exfoliated to individual atomic chains. The temperature evolution of several Raman features reveals anomalous behavior suggesting a phase transition of a magnetic origin. Theoretical considerations indicate that MoI$_3$ is an easy-plane antiferromagnet with alternating spins along the dimerized chains and with inter-chain helical spin ordering. The calculated frequencies of the phonons and magnons are consistent with the interpretation of the experimental Raman data. The obtained results shed light on the specifics of the phononic and magnonic states in MoI$_3$ and provide a strong motivation for future study of this unique material with potential for spintronic device applications. △ Less

Submitted 10 October, 2022; originally announced October 2022.

Comments: 28 pages

Asymmetrical contact scaling and measurements in MoS2 FETs

Authors: Zhihui Cheng, Jonathan Backman, Huairuo Zhang, Hattan Abuzaid, Guoqing Li, Yifei Yu, Linyou Cao, Albert V. Davydov, Mathieu Luisier, Curt A. Richter, Aaron D. Franklin

Abstract: Two-dimensional (2D) materials have great potential for use in future electronics due to their atomically thin nature which withstands short channel effects and thus enables better scalability. Device scaling is the process of reducing all device dimensions to achieve higher device density in a certain chip area. For 2D materials-based transistors, both the channel and contact scalability must be… ▽ More Two-dimensional (2D) materials have great potential for use in future electronics due to their atomically thin nature which withstands short channel effects and thus enables better scalability. Device scaling is the process of reducing all device dimensions to achieve higher device density in a certain chip area. For 2D materials-based transistors, both the channel and contact scalability must be investigated. The channel scalability of 2D materials has been thoroughly investigated, confirming their resilience to short-channel effects. However, systematic studies on contact scalability remain rare and the current understanding of contact scaling in 2D FET is inconsistent and oversimplified. Here we combine physically scaled contacts and asymmetrical contact measurements to investigate the contact scaling behavior in 2D field-effect transistors (FETs). The asymmetrical contact measurements directly compare electron injection with different contact lengths while using the exact same channel, eliminating channel-to-channel variations. Compared to devices with long contact lengths, devices with short contact lengths (scaled contacts) exhibit larger variation, smaller drain currents at high drain-source voltages, and a higher chance of showing early saturation and negative differential resistance. Quantum transport simulations show that the transfer length of Ni-MoS2 contacts can be as short as 5 nm. Our results suggest that charge injection at the source contact is different from injection at the drain side: scaled source contacts can limit the drain current, whereas scaled drain contacts cannot. Furthermore, we clearly identified that the transfer length depends on the quality of the metal-2D interface. The asymmetrical contact measurements proposed here will enable further understanding of contact scaling behavior at various interfaces. △ Less

Submitted 24 September, 2022; v1 submitted 9 September, 2022; originally announced September 2022.

CoTe2: A quantum critical Dirac metal with strong spin fluctuations

Authors: Peter E. Siegfried, Hari Bhandari, Jeanie Qi, Rojila Ghimire, Jayadeep Joshi, Zachary T. Messegee, Willie Beeson, Kai Liu, Madhav Prasad Ghimire, Yanliu Dang, Huairuo Zhang, Albert Davydov, Xiaoyan Tan, Patrick M. Vora, Igor I. Mazin, Nirmal J. Ghimire

Abstract: Quantum critical points separating weak ferromagnetic and paramagnetic phases trigger many novel phenomena. Dynamical spin fluctuations not only suppress the long-range order, but can also lead to unusual transport and even superconductivity. Combining quantum criticality with topological electronic properties presents a rare and unique opportunity. Here, by means of ab initio calculations and mag… ▽ More Quantum critical points separating weak ferromagnetic and paramagnetic phases trigger many novel phenomena. Dynamical spin fluctuations not only suppress the long-range order, but can also lead to unusual transport and even superconductivity. Combining quantum criticality with topological electronic properties presents a rare and unique opportunity. Here, by means of ab initio calculations and magnetic, thermal, and transport measurements, we show that the orthorhombic CoTe$_2$ is close to ferromagnetism, which appears suppressed by spin fluctuations. Calculations and transport measurements reveal nodal Dirac lines, making it a rare combination of proximity to quantum criticality and Dirac topology. △ Less

Submitted 28 August, 2022; originally announced August 2022.

Visualizing the out-of-plane electronic dispersions in an intercalated transition metal dichalcogenide

Authors: Xian P. Yang, Harrison LaBollita, Zi-Jia Cheng, Hari Bhandari, Tyler A. Cochran, Jia-Xin Yin, Md. Shafayat Hossain, Ilya Belopolski, Qi Zhang, Yuxiao Jiang, Nana Shumiya, Daniel Multer, Maksim Liskevich, Dmitry A. Usanov, Yanliu Dang, Vladimir N. Strocov, Albert V. Davydov, Nirmal J. Ghimire, Antia S. Botana, M. Zahid Hasan

Abstract: Layered transition metal dichalcogenides have rich phase diagram and they feature two dimensionality on numerous physical properties. Co1/3NbS2 is one of the newest members of this family where Co atoms are intercalated into the Van der Waals gaps between NbS2 layers. We study the three-dimensional electronic band structure of Co1/3NbS2 using both surface and bulk sensitive angle-resolved photoemi… ▽ More Layered transition metal dichalcogenides have rich phase diagram and they feature two dimensionality on numerous physical properties. Co1/3NbS2 is one of the newest members of this family where Co atoms are intercalated into the Van der Waals gaps between NbS2 layers. We study the three-dimensional electronic band structure of Co1/3NbS2 using both surface and bulk sensitive angle-resolved photoemission spectroscopy. We show that the electronic bands do not fit into the rigid-band-shift picture after the Co intercalation. Instead, Co1/3NbS2 displays a different orbital character near the Fermi level compared to the pristine NbS2 compound and has a clear band dispersion in kz direction despite its layered structure. Our photoemission study demonstrates the out-of-plane electronic correlations introduced by the Co intercalation, thus offering a new perspective on this compound. Finally, we propose how Fermi level tuning could lead to exotic phases such as spin density wave instability. △ Less

Submitted 1 March, 2022; originally announced March 2022.

Comments: Accepted by Physical Review B

Spatially-Resolved Band Gap and Dielectric Function in 2D Materials from Electron Energy Loss Spectroscopy

Authors: Abel Brokkelkamp, Jaco ter Hoeve, Isabel Postmes, Sabrya E. van Heijst, Louis Maduro, Albert V. Davydov, Sergiy Krylyuk, Juan Rojo, Sonia Conesa-Boj

Abstract: The electronic properties of two-dimensional (2D) materials depend sensitively on the underlying atomic arrangement down to the monolayer level. Here we present a novel strategy for the determination of the band gap and complex dielectric function in 2D materials achieving a spatial resolution down to a few nanometers. This approach is based on machine learning techniques developed in particle phy… ▽ More The electronic properties of two-dimensional (2D) materials depend sensitively on the underlying atomic arrangement down to the monolayer level. Here we present a novel strategy for the determination of the band gap and complex dielectric function in 2D materials achieving a spatial resolution down to a few nanometers. This approach is based on machine learning techniques developed in particle physics and makes possible the automated processing and interpretation of spectral images from electron energy-loss spectroscopy (EELS). Individual spectra are classified as a function of the thickness with $K$-means clustering and then used to train a deep-learning model of the zero-loss peak background. As a proof-of-concept we assess the band gap and dielectric function of InSe flakes and polytypic WS$_2$ nanoflowers, and correlate these electrical properties with the local thickness. Our flexible approach is generalizable to other nanostructured materials and to higher-dimensional spectroscopies, and is made available as a new release of the open-source EELSfitter framework. △ Less

Submitted 25 February, 2022; originally announced February 2022.

Comments: 52 pages, 15 figures, EELSfitter code and documentation available from https://lhcfitnikhef.github.io/EELSfitter/, matches published version

Journal ref: J. Phys. Chem. A 2022, 126, 7, 1255-1262

Bi2Se3 Growth on (001) GaAs Substrates for Terahertz Integrated Systems

Authors: Yongchen Liu, Wilder Acuna, Huairuo Zhang, Dai Q. Ho, Ruiqi Hu, Zhengtianye Wang, Anderson Janotti, Garnett Bryant, Albert V. Davydov, Joshua M. O. Zide, Stephanie Law

Abstract: Terahertz (THz) technologies have been of interest for many years due to the variety of applications including gas sensing, nonionizing imaging of biological systems, security and defense, etc. To date, scientists have used different classes of materials to perform different THz functions. However, to assemble an on-chip THz integrated system, we must understand how to integrate these different ma… ▽ More Terahertz (THz) technologies have been of interest for many years due to the variety of applications including gas sensing, nonionizing imaging of biological systems, security and defense, etc. To date, scientists have used different classes of materials to perform different THz functions. However, to assemble an on-chip THz integrated system, we must understand how to integrate these different materials. Here, we explore the growth of Bi2Se3, a topological insulator (TI) material that could serve as a plasmonic waveguide in THz integrated devices, on technologically-important GaAs (001) substrates. We explore surface treatments and find that atomically smooth GaAs surface is critical to achieving high-quality Bi2Se3 films despite the relatively weak film/substrate interaction. Calculations indicate that the Bi2Se3/GaAs interface is likely selenium-terminated and shows no evidence of chemical bonding between the Bi2Se3 and the substrate. These results are a guide for integrating van der Waals materials with conventional semiconductor substrates and serve as the first steps toward achieving an on-chip THz integrated system. △ Less

Submitted 29 August, 2022; v1 submitted 4 February, 2022; originally announced February 2022.

Perpendicular magnetic tunnel junctions with multi-interface free layer

Authors: Pravin Khanal, Bowei Zhou, Magda Andrade, Yanliu Dang, Albert Davydov, Ali Habiboglu, Jonah Saidian, Adam Laurie, Jian-Ping Wang, Daniel B Gopman, Weigang Wang

Abstract: Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular magnetic tunnel junctions with composite free layers where multiple ferromagnet/nonmagnet interfaces can contribute to the thermal stability. Different nonmagne… ▽ More Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular magnetic tunnel junctions with composite free layers where multiple ferromagnet/nonmagnet interfaces can contribute to the thermal stability. Different nonmagnetic materials (MgO, Ta, Mo) have been employed as the coupling layers in these multi-interface free layers. The evolution of junction properties under different annealing conditions is investigated. A strong dependence of tunneling magnetoresistance on the thickness of the first CoFeB layer has been observed. In junctions where Mo and MgO are used as coupling layers, large tunneling magnetoresistance above 200% has been achieved after 400°C annealing. △ Less

Submitted 11 January, 2022; originally announced January 2022.

Journal ref: Appl. Phys. Lett. 119, 242404 (2021)

Analysis of Raman and Ellipsometric Responses of Nb$_{x}$W$_{1-x}$Se$_{2}$ alloys

Authors: Albert F. Rigosi, Heather M. Hill, Sergiy Krylyuk, Nhan V. Nguyen, Angela R. Hight Walker, Albert V. Davydov, David B. Newell

Abstract: The growth of transition metal dichalcogenide (TMDC) alloys provides an opportunity to experimentally access information elucidating how optical properties change with gradual substitutions in the lattice compared with their pure compositions. In this work, we performed growths of alloyed crystals with stoichiometric compositions between pure forms of NbSe2 and WSe2, followed by an optical analysi… ▽ More The growth of transition metal dichalcogenide (TMDC) alloys provides an opportunity to experimentally access information elucidating how optical properties change with gradual substitutions in the lattice compared with their pure compositions. In this work, we performed growths of alloyed crystals with stoichiometric compositions between pure forms of NbSe2 and WSe2, followed by an optical analysis of those alloys by utilizing Raman spectroscopy and spectroscopic ellipsometry. △ Less

Submitted 24 December, 2021; originally announced December 2021.

Crystalline Formations of NbN/4H-SiC Heterostructure Interfaces

Authors: Michael B. Katz, Chieh-I Liu, Albert F. Rigosi, Mattias Kruskopf, Angela Hight Walker, Randolph E. Elmquist, Albert V. Davydov

Abstract: Given the importance of incorporating various superconducting materials to device fabrication or substrate development, studying the interface for possible interactions is warranted. In this work, NbN films sputter-deposited on 4H-SiC were heat-treated at 1400 C and 1870 C and were examined with transmission electron microscopy to assess whether the interfacial interactions undergo temperature-dep… ▽ More Given the importance of incorporating various superconducting materials to device fabrication or substrate development, studying the interface for possible interactions is warranted. In this work, NbN films sputter-deposited on 4H-SiC were heat-treated at 1400 C and 1870 C and were examined with transmission electron microscopy to assess whether the interfacial interactions undergo temperature-dependent behavior. We report the diffusion of NbN into the SiC substrate and the formation of NbN nanocrystallites therein during the 1400 C treatment. After the 1870 C treatment, tiered porosity and the formation of voids are observed, likely due to catalytic reactions between the two materials and accelerated by the stresses induced by the differences in the materials' coefficients of thermal expansion. Lastly, Raman spectroscopy is employed to gain an understanding of the interface lattices' optical responses. △ Less

Submitted 16 November, 2021; originally announced November 2021.

2D Metal Selenide-Silicon Steep Sub-Threshold Heterojunction Triodes with High On-Current Density

Authors: Jinshui Miao, Chloe Leblanc, Xiwen Liu, Baokun Song, Huairuo Zhang, Sergiy Krylyuk, Albert V. Davydov, Tyson Back, Nicholas Glavin, Deep Jariwala

Abstract: Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that exploit direct band-to-band tunneling of charges and exhibit steep sub-threshold slope (SS) transfer characteristics are an attractive option in this regard. However, current generation of Si and III-V heterojunction base… ▽ More Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that exploit direct band-to-band tunneling of charges and exhibit steep sub-threshold slope (SS) transfer characteristics are an attractive option in this regard. However, current generation of Si and III-V heterojunction based TFETs while suffer from low ON current density and ON/OFF current ratios for < 60 mV/dec operation. Semiconducting two-dimensional (2D) layers have recently renewed enthusiasm in novel device design for TFETs not only because of their atomically-thin bodies that favor superior electrostatic control but the same feature also favors higher ON current density and consequently high ON/OFF ratio. Here, we demonstrate gate-tunable heterojunction diodes (triodes) fabricated from InSe/Si 2D/3D van der Waals heterostructures, with a minimum subthreshold swing (SS) as low as 6.4 mV/dec and an SS average of 30 mV/dec over 4 decades of current. Further, the devices show a large current on/off ratio of approximately 10^6 and on-state current density of 0.3 uA/um at a drain bias of -1V. Our work opens new avenues for 2D semiconductors for 3D hetero-integration with Si to achieve ultra-low power logic devices. △ Less

Submitted 11 November, 2021; originally announced November 2021.

Comments: 5 figures and supporting information

Charge Density Wave Activated Excitons in TiSe$_2$-MoSe$_2$ Heterostructures

Authors: Jaydeep Joshi, Benedikt Scharf, Igor Mazin, Sergiy Krylyuk, Daniel J. Campbell, Johnpierre Paglione, Albert Davydov, Igor Žutić, Patrick M. Vora

Abstract: Layered materials enable the assembly of a new class of heterostructures where lattice-matching is no longer a requirement. Interfaces in these heterostructures therefore become a fertile ground for unexplored physics as dissimilar phenomena can be coupled via proximity effects. In this article we identify an unexpected photoluminescence (PL) peak when MoSe$_2$ interacts with TiSe$_2$. A series of… ▽ More Layered materials enable the assembly of a new class of heterostructures where lattice-matching is no longer a requirement. Interfaces in these heterostructures therefore become a fertile ground for unexplored physics as dissimilar phenomena can be coupled via proximity effects. In this article we identify an unexpected photoluminescence (PL) peak when MoSe$_2$ interacts with TiSe$_2$. A series of temperature-dependent and spatially-resolved PL measurements reveal this peak is unique to the TiSe$_2$-MoSe$_2$ interface, higher in energy compared to the neutral exciton, and exhibits exciton-like characteristics. The feature disappears at the TiSe$_2$ charge density wave transition, suggesting that the density wave plays an important role in the formation of this new exciton. We present several plausible scenarios regarding the origin of this peak that individually capture some aspects of our observations, but cannot fully explain this feature. These results therefore represent a fresh challenge for the theoretical community and provide a fascinating way to engineer excitons through interactions with charge density waves. △ Less

Submitted 29 October, 2021; originally announced October 2021.

Journal ref: APL Materials 10, 011103 (2022)

Highly Accurate, Reliable and Non-Contaminating Two-Dimensional Material Transfer System

Authors: Chandraman Patil, Hamed Dalir, Jin Ho Kang, Albert Davydov, Chee Wei Wong, Volker J. Sorger

Abstract: The exotic properties of two-dimensional (2D) materials and 2D heterostructures, built by forming heterogeneous multi-layered stacks, have been widely explored across a number of subject matters following the goal to invent, design, and improve applications enabled by 2D materials. To successfully harvest these unique properties effectively and increase the yield of manufacturing 2D material-based… ▽ More The exotic properties of two-dimensional (2D) materials and 2D heterostructures, built by forming heterogeneous multi-layered stacks, have been widely explored across a number of subject matters following the goal to invent, design, and improve applications enabled by 2D materials. To successfully harvest these unique properties effectively and increase the yield of manufacturing 2D material-based devices for achieving reliable and repeatable results is the current challenge. The scientific community has introduced various experimental transfer systems explained in detail for exfoliated 2D materials, however, the field lacks statistical analysis and the capability of producing a transfer technique enabling; i) high transfer precision and yield, ii) cross-contamination free transfer, iii) multi-substrate transfer, and iv) rapid prototyping without wet chemistry. Here we introduce a novel 2D material deterministic transfer system and experimentally show its high accuracy, reliability, repeatability, and non-contaminating transfer features by demonstrating fabrication of 2D material-based optoelectronic devices featuring novel device physics and unique functionality. Such rapid and material-near prototyping capability can accelerate not only layered material science in discovery but also engineering innovations. △ Less

Submitted 17 September, 2021; v1 submitted 10 September, 2021; originally announced September 2021.

Prolonged orbital relaxation by locally modified phonon density of states for SiV$^-$ center in nanodiamonds

Authors: Marco Klotz, Konstantin G. Fehler, Elena S. Steiger, Stefan Häußler, Richard Waltrich, Prithvi Reddy, Liudmila F. Kulikova, Valery A. Davydov, Viatcheslav N. Agafonov, Marcus W. Doherty, Alexander Kubanek

Abstract: Coherent quantum systems are a key resource for emerging quantum technology. Solid-state spin systems are of particular importance for compact and scalable devices. However, interaction with the solid-state host degrades the coherence properties. The negatively-charged silicon vacancy center in diamond is such an example. While spectral properties are outstanding, with optical coherence protected… ▽ More Coherent quantum systems are a key resource for emerging quantum technology. Solid-state spin systems are of particular importance for compact and scalable devices. However, interaction with the solid-state host degrades the coherence properties. The negatively-charged silicon vacancy center in diamond is such an example. While spectral properties are outstanding, with optical coherence protected by the defects symmetry, the spin coherence is susceptible to rapid orbital relaxation limiting the spin dephasing time. A prolongation of the orbital relaxation time is therefore of utmost urgency and has been tackled by operating at very low temperatures or by introducing large strain. However, both methods have significant drawbacks, the former requires use of dilution refrigerators and the latter affects intrinsic symmetries. Here, a novel method is presented to prolong the orbital relaxation with a locally modified phonon density of states in the relevant frequency range, by restricting the diamond host to below 100 nm. The method works at liquid Helium temperatures of few Kelvin and in the low-strain regime. △ Less

Submitted 2 August, 2021; v1 submitted 30 July, 2021; originally announced July 2021.

Distinguishing two-component anomalous Hall effect from topological Hall effect

Authors: Lixuan Tai, Bingqian Dai, Jie Li, Hanshen Huang, Su Kong Chong, Kin Wong, Huairuo Zhang, Peng Zhang, Peng Deng, Christopher Eckberg, Gang Qiu, Haoran He, Di Wu, Shijie Xu, Albert V. Davydov, Ruqian Wu, Kang L. Wang

Abstract: In transport, the topological Hall effect (THE) presents itself as non-monotonic features (or humps and dips) in the Hall signal and is widely interpreted as a sign of chiral spin textures, like magnetic skyrmions. However, when anomalous Hall effect (AHE) is also present, the co-existence of two AHEs could give rise to similar artifacts, making it difficult to distinguish between genuine THE with… ▽ More In transport, the topological Hall effect (THE) presents itself as non-monotonic features (or humps and dips) in the Hall signal and is widely interpreted as a sign of chiral spin textures, like magnetic skyrmions. However, when anomalous Hall effect (AHE) is also present, the co-existence of two AHEs could give rise to similar artifacts, making it difficult to distinguish between genuine THE with AHE and two-component AHE. Here we confirm genuine THE with AHE by means of transport and magneto-optical Kerr effect (MOKE) microscopy, in which magnetic skyrmions are directly observed, and find that genuine THE occurs in the transition region of the AHE. In sharp contrast, the artifact "THE", or two-component AHE occurs well beyond the saturation of the "AHE component" (under the false assumption of THE+AHE). Furthermore, we distinguish artifact "THE" from genuine THE by three methods: 1. Minor loops, 2. Temperature dependence, 3. Gate dependence. Minor loops of genuine THE with AHE are always within the full loop, while minor loops of the artifact "THE" may reveal a single loop that cannot fit into the "AHE component". Besides, the temperature or gate dependence of the artifact "THE" may also be accompanied by a polarity change of the "AHE component", as the non-monotonic features vanish, while the temperature dependence of genuine THE with AHE reveals no such change. Our work may help future researchers to exercise cautions and use these methods to examine carefully in order to ascertain genuine THE. △ Less

Submitted 15 August, 2022; v1 submitted 17 March, 2021; originally announced March 2021.

Laser-assisted atom probe tomography of c-plane and m-plane InGaN test structures

Authors: N. A. Sanford, P. T. Blanchard, M. D. Brubaker, A. K. Rishinaramangalam, Q. Zhang, A. Roshko, D. F. Feezell, B. D. B. Klein, A. V. Davydov

Abstract: Laser-assisted atom probe tomography (APT) was used to measure the indium mole fraction x of c-plane, MOCVD-grown, GaN/In(x)Ga(1-x)N/GaN test structures and the results were compared with Rutherford backscattering analysis (RBS). Four sample types were examined with (RBS determined) x = 0.030, 0.034, 0.056, and 0.112. The respective In(x)Ga(1-x)N layer thicknesses were 330 nm, 327 nm, 360 nm, and… ▽ More Laser-assisted atom probe tomography (APT) was used to measure the indium mole fraction x of c-plane, MOCVD-grown, GaN/In(x)Ga(1-x)N/GaN test structures and the results were compared with Rutherford backscattering analysis (RBS). Four sample types were examined with (RBS determined) x = 0.030, 0.034, 0.056, and 0.112. The respective In(x)Ga(1-x)N layer thicknesses were 330 nm, 327 nm, 360 nm, and 55 nm. APT data were collected at (fixed) laser pulse energy (PE) selected within the range of (2-1000) fJ. Sample temperatures were = 54 K. PE within (2-50) fJ yielded x values that agreed with RBS (within uncertainty) and were comparatively insensitive to region-of-interest (ROI) geometry and orientation. By contrast, approximate stoichiometry was only found in the GaN portions of the samples provided PE was within (5-20) fJ and the analyses were confined to cylindrical ROIs (of diameters =20 nm) that were coaxial with the specimen tips. m-plane oriented tips were derived from c-axis grown, core-shell, GaN/In(x)Ga(1-x)N nanorod heterostructures. Compositional analysis along [0 0 0 1] (transverse to the long axis of the tip), of these m-plane samples revealed a spatial asymmetry in charge-state ratio (CSR) and a corresponding asymmetry in the resultant tip shape along this direction; no asymmetry in CSR or tip shape was observed for analysis along [-1 2-1 0]. Simulations revealed that the electric field strength at the tip apex was dominated by the presence of a p-type inversion layer, which developed under typical tip-electrode bias conditions for the n-type doping levels considered. Finally, both c-plane and m-plane sample types showed depth-dependent variations in absolute ion counts that depended upon ROI placement. △ Less

Submitted 11 February, 2021; originally announced February 2021.

Comments: 45 pages total, which includes 22 figures

A Robust Coherent Single-Photon Interface for Moderate- NA Optics Based on SiV Center in Nanodiamonds and a Plasmonic Bullseye Antenna

Authors: Richard Waltrich, Hamza Abudayyeh, Boaz Lubotzky, Elena S. Steiger, Konstantin G. Fehler, Niklas Lettner, Valery A. Davydov, Viatcheslav N. Agafonov, Ronen Rapaport, Alexander Kubanek

Abstract: Coherent exchange of single photons is at the heart of applied Quantum Optics. The negatively-charged silicon vacancy center in diamond is among most promising sources for coherent single photons. Its large Debye-Waller factor, short lifetime and extraordinary spectral stability is unique in the field of solid-state single photon sources. However, the excitation and detection of individual centers… ▽ More Coherent exchange of single photons is at the heart of applied Quantum Optics. The negatively-charged silicon vacancy center in diamond is among most promising sources for coherent single photons. Its large Debye-Waller factor, short lifetime and extraordinary spectral stability is unique in the field of solid-state single photon sources. However, the excitation and detection of individual centers requires high numerical aperture optics which, combined with the need for cryogenic temperatures, puts technical overhead on experimental realizations. Here, we investigate a hybrid quantum photonics platform based on silicon-vacancy center in nanodiamonds and metallic bullseye antenna to realize a coherent single-photon interface that operates efficiently down to low numerical aperture optics with an inherent resistance to misalignment. △ Less

Submitted 20 February, 2021; v1 submitted 22 January, 2021; originally announced January 2021.

Construction of low-energy symmetric Hamiltonians and Hubbard parameters for twisted multilayer systems using ab-initio input

Authors: Arkadiy Davydov, Kenny Choo, Mark H. Fischer, Titus Neupert

Abstract: A computationally efficient workflow for obtaining the low-energy symmetric tight-binding Hamiltonians for twisted multilayer systems is presented in this work. We apply this scheme to twisted bilayer graphene at the first magic angle. As initial step, the full-energy tight-binding Hamiltonian is generated by the Slater-Koster model with parameters fitted to ab-initio data at larger angles. Then,… ▽ More A computationally efficient workflow for obtaining the low-energy symmetric tight-binding Hamiltonians for twisted multilayer systems is presented in this work. We apply this scheme to twisted bilayer graphene at the first magic angle. As initial step, the full-energy tight-binding Hamiltonian is generated by the Slater-Koster model with parameters fitted to ab-initio data at larger angles. Then, the low-energy symmetric four-band and twelve-band Hamiltonians are constructed using the maximum-localization procedure subjected to crystal and time-reversal-symmetry constraints. Finally, we compute extended Hubbard parameters for both models within the constrained random phase approximation (cRPA) for screening, which again respect the symmetries. The relevant data and results of this work are freely available via an online repository. Our workflow, exemplified in this work on twisted bilayer graphene, is straightforwardly transferable to other twisted multi-layer materials. △ Less

Submitted 23 November, 2022; v1 submitted 23 December, 2020; originally announced December 2020.

Comments: 14 pages, 8 figures

Journal ref: Phys. Rev. B 105, 165153 (2022)

Hybrid quantum photonics based on artificial atoms placed inside one hole of a photonic crystal cavity

Authors: Konstantin G. Fehler, Lukas Antoniuk, Niklas Lettner, Anna P. Ovvyan, Richard Waltrich, Nico Gruhler, Valery A. Davydov, Viatcheslav N. Agafonov, Wolfram H. P. Pernice, Alexander Kubanek

Abstract: Spin-based quantum photonics promise to realize distributed quantum computing and quantum networks. The performance depends on efficient entanglement distribution, where the efficiency can be boosted by means of cavity quantum electrodynamics. The central challenge is the development of compact devices with large spin-photon coupling rates and high operation bandwidth. Photonic crystal cavities co… ▽ More Spin-based quantum photonics promise to realize distributed quantum computing and quantum networks. The performance depends on efficient entanglement distribution, where the efficiency can be boosted by means of cavity quantum electrodynamics. The central challenge is the development of compact devices with large spin-photon coupling rates and high operation bandwidth. Photonic crystal cavities comprise strong field confinement but put high demands on accurate positioning of an atomic system in the mode field maximum. Color center in diamond, and in particular the negatively-charged Silicon-Vacancy center, emerged as a promising atom-like systems. Large spectral stability and access to long-lived, nuclear spin memories enabled elementary demonstrations of quantum network nodes including memory-enhanced quantum communication. In a hybrid approach, we deterministically place SiV$^-$-containing nanodiamonds inside one hole of a one-dimensional, free-standing, Si$_3$N$_4$-based photonic crystal cavity and coherently couple individual optical transitions to the cavity mode. We optimize the light-matter coupling by utilizing two-mode composition, waveguiding, Purcell-enhancement and cavity resonance tuning. The resulting photon flux is increased by more than a factor of 14 as compared to free-space. The corresponding lifetime shortening to below 460 ps puts the potential operation bandwidth beyond GHz rates. Our results mark an important step to realize quantum network nodes based on hybrid quantum photonics with SiV$^-$- center in nanodiamonds. △ Less

Submitted 1 February, 2021; v1 submitted 21 December, 2020; originally announced December 2020.

Journal ref: ACS Photonics, 8(9), 2635-2641 (2021)

Control of Mooij correlations at the nanoscale in the disordered metallic Ta - nanoisland FeNi multilayers

Authors: N. N. Kovaleva, F. V. Kusmartsev, A. B. Mekhiya, I. N. Trunkin, D. Chvostova, A. B. Davydov, L. N. Oveshnikov, O. Pacherova, I. A. Sherstnev, A. Kusmartseva, K. I. Kugel, A. Dejneka, F. A. Pudonin, Y. Luo, B. A. Aronzon

Abstract: Localisation phenomena in highly disordered metals close to the extreme conditions determined by the Mott-Ioffe-Regel (MIR) limit when the electron mean free path is approximately equal to the interatomic distance is a challenging problem. Here, to shed light on these localisation phenomena, we studied the dc transport and optical conductivity properties of nanoscaled multilayered films composed o… ▽ More Localisation phenomena in highly disordered metals close to the extreme conditions determined by the Mott-Ioffe-Regel (MIR) limit when the electron mean free path is approximately equal to the interatomic distance is a challenging problem. Here, to shed light on these localisation phenomena, we studied the dc transport and optical conductivity properties of nanoscaled multilayered films composed of disordered metallic Ta and magnetic FeNi nanoisland layers, where ferromagnetic FeNi nanoislands have giant magnetic moments of 10^3-10^5 Bohr magnetons (μ_B). In these multilayered structures, FeNi nanoisland giant magnetic moments are interacting due to the indirect exchange forces acting via the Ta electron subsystem. We discovered that the localisation phenomena in the disordered Ta layer lead to a decrease in the Drude contribution of free charge carriers and the appearance of the low-energy electronic excitations in the 1-2 eV spectral range characteristic of electronic correlations, which may accompany the formation of electronic inhomogeneities. From the consistent results of the dc transport and optical studies we found that with an increase in the FeNi layer thickness across the percolation threshold evolution from the superferromagnetic to ferromagnetic behaviour within the FeNi layer leads to the delocalisation of Ta electrons from the associated localised electronic states. On the contrary, we discovered that when the FeNi layer is discontinuous and represented by randomly distributed superparamagnetic FeNi nanoislands, the Ta layer normalized dc conductivity falls down below the MIR limit by about 60%. The discovered effect leading to the dc conductivity fall below the MIR limit can be associated with non-ergodicity and purely quantum (many-body) localisation phenomena, which need to be challenged further. △ Less

Submitted 8 December, 2020; v1 submitted 22 August, 2020; originally announced August 2020.

Comments: 29 pages, 8 figures. This is a post-peer-review, precopyedit version of an article published in Scientific Reports. The final authenticated version is available online at http://dx.doi.org/10.1038/s41598-020-78185-6

Journal ref: Scientific Reports (2020)10:21172

Ab initio theory of plasmonic superconductivity within the Eliashberg and density-functional formalisms

Authors: A. Davydov, A. Sanna, C. Pellegrini, J. K. Dewhurst, S. Sharma, E. K. U. Gross

Abstract: We extend the two leading methods for the \emph{ab initio} computational descrip tion of phonon-mediated superconductors, namely Eliashberg theory and density fu nctional theory for superconductors (SCDFT), to include plasmonic effects. Furth ermore, we introduce a hybrid formalism in which the Eliashberg approximation fo r the electron-phonon coupling is combined with the SCDFT treatment of the d… ▽ More We extend the two leading methods for the \emph{ab initio} computational descrip tion of phonon-mediated superconductors, namely Eliashberg theory and density fu nctional theory for superconductors (SCDFT), to include plasmonic effects. Furth ermore, we introduce a hybrid formalism in which the Eliashberg approximation fo r the electron-phonon coupling is combined with the SCDFT treatment of the dynam ically screened Coulomb interaction. The methods have been tested on a set of we ll-known conventional superconductors by studying how the plasmon contribution a ffects the phononic mechanism in determining the critical temperature (\tc). Our simulations show that plasmonic SCDFT leads to a good agreement between predict ed and measured \tc's, whereas Eliashberg theory considerably overestimates the plasmon-mediated pairing and, therefore, \tc. The hybrid approach, on the other hand, gives results close to SCDFT and overall in excellent agreement with exper iments. △ Less

Submitted 25 July, 2020; originally announced July 2020.

Journal ref: Phys. Rev. B 102, 214508 (2020)

The Joint Automated Repository for Various Integrated Simulations (JARVIS) for data-driven materials design

Authors: Kamal Choudhary, Kevin F. Garrity, Andrew C. E. Reid, Brian DeCost, Adam J. Biacchi, Angela R. Hight Walker, Zachary Trautt, Jason Hattrick-Simpers, A. Gilad Kusne, Andrea Centrone, Albert Davydov, Jie Jiang, Ruth Pachter, Gowoon Cheon, Evan Reed, Ankit Agrawal, Xiaofeng Qian, Vinit Sharma, Houlong Zhuang, Sergei V. Kalinin, Bobby G. Sumpter, Ghanshyam Pilania, Pinar Acar, Subhasish Mandal, Kristjan Haule , et al. (3 additional authors not shown)

Abstract: The Joint Automated Repository for Various Integrated Simulations (JARVIS) is an integrated infrastructure to accelerate materials discovery and design using density functional theory (DFT), classical force-fields (FF), and machine learning (ML) techniques. JARVIS is motivated by the Materials Genome Initiative (MGI) principles of developing open-access databases and tools to reduce the cost and d… ▽ More The Joint Automated Repository for Various Integrated Simulations (JARVIS) is an integrated infrastructure to accelerate materials discovery and design using density functional theory (DFT), classical force-fields (FF), and machine learning (ML) techniques. JARVIS is motivated by the Materials Genome Initiative (MGI) principles of developing open-access databases and tools to reduce the cost and development time of materials discovery, optimization, and deployment. The major features of JARVIS are: JARVIS-DFT, JARVIS-FF, JARVIS-ML, and JARVIS-Tools. To date, JARVIS consists of 40,000 materials and 1 million calculated properties in JARVIS-DFT, 1,500 materials and 110 force-fields in JARVIS-FF, and 25 ML models for material-property predictions in JARVIS-ML, all of which are continuously expanding. JARVIS-Tools provides scripts and workflows for running and analyzing various simulations. We compare our computational data to experiments or high-fidelity computational methods wherever applicable to evaluate error/uncertainty in predictions. In addition to the existing workflows, the infrastructure can support a wide variety of other technologically important applications as part of the data-driven materials design paradigm. The JARVIS datasets and tools are publicly available at the website: https://jarvis.nist.gov . △ Less

Submitted 11 July, 2021; v1 submitted 3 July, 2020; originally announced July 2020.

GW space-time method: Energy band-gap of solid hydrogen

Authors: Sam Azadi, Arkadiy Davydov, Evgeny Kozik

Abstract: We implement the GW space-time method at finite temperatures, in which the Green's function G and the screened Coulomb interaction W are represented in the real space on a suitable mesh and in imaginary time in terms of Chebyshev polynomials, paying particular attention to controlling systematic errors of the representation. Having validated the technique by the canonical application to silicon an… ▽ More We implement the GW space-time method at finite temperatures, in which the Green's function G and the screened Coulomb interaction W are represented in the real space on a suitable mesh and in imaginary time in terms of Chebyshev polynomials, paying particular attention to controlling systematic errors of the representation. Having validated the technique by the canonical application to silicon and germanium, we apply it to calculation of band gaps in hexagonal solid hydrogen with the bare Green's function obtained from density functional approximation and the interaction screened within the random phase approximation (RPA). The band gap results, obtained from the asymptotic decay of the full Green's function without resorting to analytic continuation, suggest that the solid hydrogen above 270 GPa can not adopt the hexagonal-closed-pack (hcp) structure. The demonstrated ability of the method to store the full G and W functions in memory with sufficient accuracy is crucial for its subsequent extensions to include higher orders of the diagrammatic series by means of diagrammatic Monte Carlo algorithms. △ Less

Submitted 6 December, 2021; v1 submitted 11 June, 2020; originally announced June 2020.

On-the-fly Closed-loop Autonomous Materials Discovery via Bayesian Active Learning

Authors: A. Gilad Kusne, Heshan Yu, Changming Wu, Huairuo Zhang, Jason Hattrick-Simpers, Brian DeCost, Suchismita Sarker, Corey Oses, Cormac Toher, Stefano Curtarolo, Albert V. Davydov, Ritesh Agarwal, Leonid A. Bendersky, Mo Li, Apurva Mehta, Ichiro Takeuchi

Abstract: Active learning - the field of machine learning (ML) dedicated to optimal experiment design, has played a part in science as far back as the 18th century when Laplace used it to guide his discovery of celestial mechanics [1]. In this work we focus a closed-loop, active learning-driven autonomous system on another major challenge, the discovery of advanced materials against the exceedingly complex… ▽ More Active learning - the field of machine learning (ML) dedicated to optimal experiment design, has played a part in science as far back as the 18th century when Laplace used it to guide his discovery of celestial mechanics [1]. In this work we focus a closed-loop, active learning-driven autonomous system on another major challenge, the discovery of advanced materials against the exceedingly complex synthesis-processes-structure-property landscape. We demonstrate autonomous research methodology (i.e. autonomous hypothesis definition and evaluation) that can place complex, advanced materials in reach, allowing scientists to fail smarter, learn faster, and spend less resources in their studies, while simultaneously improving trust in scientific results and machine learning tools. Additionally, this robot science enables science-over-the-network, reducing the economic impact of scientists being physically separated from their labs. We used the real-time closed-loop, autonomous system for materials exploration and optimization (CAMEO) at the synchrotron beamline to accelerate the fundamentally interconnected tasks of rapid phase mapping and property optimization, with each cycle taking seconds to minutes, resulting in the discovery of a novel epitaxial nanocomposite phase-change memory material. △ Less

Submitted 10 November, 2020; v1 submitted 10 June, 2020; originally announced June 2020.

Comments: 30 pages and 13 figures in PDF including Methods section

Journal ref: Nat Commun 11, 5966 (2020)

Localized Excitons in NbSe$_2$-MoSe$_2$ Heterostructures

Authors: Jaydeep Joshi, Tong Zhou, Sergiy Krylyuk, Albert V. Davydov, Igor Zutic, Patrick M. Vora

Abstract: Neutral and charged excitons (trions) in atomically-thin materials offer important capabilities for photonics, from ultrafast photodetectors to highly-efficient light-emitting diodes and lasers. Recent studies of van der Waals (vdW) heterostructures comprised of dissimilar monolayer materials have uncovered a wealth of optical phenomena that are predominantly governed by interlayer interactions. H… ▽ More Neutral and charged excitons (trions) in atomically-thin materials offer important capabilities for photonics, from ultrafast photodetectors to highly-efficient light-emitting diodes and lasers. Recent studies of van der Waals (vdW) heterostructures comprised of dissimilar monolayer materials have uncovered a wealth of optical phenomena that are predominantly governed by interlayer interactions. Here, we examine the optical properties in NbSe$_2$ - MoSe$_2$ vdW heterostructures, which provide an important model system to study metal-semiconductor interfaces, a common element in optoelectronics. Through low-temperature photoluminescence (PL) microscopy we discover a sharp emission feature, L1, that is localized at the NbSe$_2$-capped regions of MoSe$_2$. L1 is observed at energies below the commonly-studied MoSe$_2$ excitons and trions, and exhibits temperature- and power-dependent PL consistent with exciton localization in a confining potential. Remarkably, L1 is very robust not just in different samples, but also under a variety of fabrication processes. Using first-principles calculations we reveal that the confinement potential required for exciton localization naturally arises from the in-plane band bending due to the changes in the electron affinity between pristine MoSe$_2$ and NbSe$_2$ - MoSe$_2$ heterostructure. We discuss the implications of our studies for atomically-thin optoelectronics devices with atomically-sharp interfaces and tunable electronic structures. △ Less

Submitted 6 April, 2020; originally announced April 2020.

Comments: 30 pages, 5 figures, 2 tables

Journal ref: ACS Nano 2020, 14, 7, 8528-8538

Purcell-Enhanced Emission from Individual SiV$^-$ Center in Nanodiamonds Coupled to a Si$_3$N$_4$-Based, Photonic Crystal Cavity

Authors: Konstantin G. Fehler, Anna P. Ovvyan, Lukas Antoniuk, Niklas Lettner, Nico Gruhler, Valery A. Davydov, Viatcheslav N. Agafonov, Wolfram H. P. Pernice, Alexander Kubanek

Abstract: Hybrid quantum photonics combines classical photonics with quantum emitters in a postprocessing step. It facilitates to link ideal quantum light sources to optimized photonic platforms. Optical cavities enable to harness the Purcell-effect boosting the device efficiency. Here, we postprocess a free-standing, crossed-waveguide photonic crystal cavity based on Si$_3$N$_4$ with SiV$^-$ center in nano… ▽ More Hybrid quantum photonics combines classical photonics with quantum emitters in a postprocessing step. It facilitates to link ideal quantum light sources to optimized photonic platforms. Optical cavities enable to harness the Purcell-effect boosting the device efficiency. Here, we postprocess a free-standing, crossed-waveguide photonic crystal cavity based on Si$_3$N$_4$ with SiV$^-$ center in nanodiamonds. We develop a routine that holds the capability to optimize all degrees of freedom of the evanescent coupling term utilizing AFM nanomanipulation. After a few optimization cycles we resolve the fine-structure of individual SiV$^-$ centers and achieve a Purcell enhancement of more than 4 on individual optical transitions, meaning that four out of five spontaneously emitted photons are channeled into the photonic device. Our work opens up new avenues to construct efficient quantum photonic devices. △ Less

Submitted 28 April, 2020; v1 submitted 14 October, 2019; originally announced October 2019.

Comments: 7 pages, 4 figures. Nanophotonics (2020)

Journal ref: Nanophotonics, 9(11), 3655-3662 (2020)

Preparing single SiV$^{-}$ center in nanodiamonds for external, optical coupling with access to all degrees of freedom

Authors: Stefan Häußler, Lukas Hartung, Konstantin G. Fehler, Lukas Antoniuk, Liudmila F. Kulikova, Valery A. Davydov, Viatcheslav N. Agafonov, Fedor Jelezko, Alexander Kubanek

Abstract: Optical coupling enables intermediate- and long-range interactions between distant quantum emitters. Such interaction may be the basic element in bottom-up approaches of coupled spin systems or for integrated quantum photonics and quantum plasmonics. Here, we prepare nanodiamonds carrying single, negatively-charged silicon-vacancy centers for evanescent optical coupling with access to all degrees… ▽ More Optical coupling enables intermediate- and long-range interactions between distant quantum emitters. Such interaction may be the basic element in bottom-up approaches of coupled spin systems or for integrated quantum photonics and quantum plasmonics. Here, we prepare nanodiamonds carrying single, negatively-charged silicon-vacancy centers for evanescent optical coupling with access to all degrees of freedom by means of atomic force nanomanipulation. The color centers feature excellent optical properties, comparable to silicon-vacancy centers in bulk diamond, resulting in a resolvable fine structure splitting, a linewidth close to the Fourier-Transform limit under resonant excitation and a good polarization contrast. We determine the orbital relaxation time $T_{1}$ of the orbitally split ground states and show that all optical properties are conserved during translational nanomanipulation. Furthermore, we demonstrate the rotation of the nanodiamonds. In contrast to the translational operation, the rotation leads to a change in polarization contrast. We utilize the change in polarization contrast before and after nanomanipulation to determine the rotation angle. Finally, we evaluate the likelihood for indistinguishable, single photon emission of silicon-vacancy centers located in different nanodiamonds. Our work enables ideal evanescent, optical coupling of distant nanodiamonds containing silicon-vacancy centers with applications in the realization of quantum networks, quantum repeaters or complex quantum systems. △ Less

Submitted 2 October, 2019; v1 submitted 5 August, 2019; originally announced August 2019.

Comments: 15 pages, 4 figures

Valley Phenomena in the Candidate Phase Change Material WSe$_{2(1-x)}$Te$_{2x}$

Authors: Sean M. Oliver, Joshua Young, Sergiy Krylyuk, Thomas L. Reinecke, Albert V. Davydov, Patrick M. Vora

Abstract: Alloyed transition metal dichalcogenides provide an opportunity for coupling band engineering with valleytronic phenomena in an atomically-thin platform. However, valley properties in alloys remain largely unexplored. We investigate the valley degree of freedom in monolayer alloys of the phase change candidate material WSe$_{2(1-x)}$Te$_{2x}$. Low temperature Raman measurements track the alloy-ind… ▽ More Alloyed transition metal dichalcogenides provide an opportunity for coupling band engineering with valleytronic phenomena in an atomically-thin platform. However, valley properties in alloys remain largely unexplored. We investigate the valley degree of freedom in monolayer alloys of the phase change candidate material WSe$_{2(1-x)}$Te$_{2x}$. Low temperature Raman measurements track the alloy-induced transition from the semiconducting 1H phase of WSe$_2$ to the semimetallic 1T$_d$ phase of WTe$_2$. We correlate these observations with density functional theory calculations and identify new Raman modes from W-Te vibrations in the 1H alloy phase. Photoluminescence measurements show ultra-low energy emission features that highlight alloy disorder arising from the large W-Te bond lengths. Interestingly, valley polarization and coherence in alloys survive at high Te compositions and are more robust against temperature than in WSe$_2$. These findings illustrate the persistence of valley properties in alloys with highly dissimilar parent compounds and suggest band engineering can be utilized for valleytronic devices. △ Less

Submitted 22 November, 2019; v1 submitted 1 August, 2019; originally announced August 2019.

Comments: Manuscript: 27 pages, 6 figures, 1 table. Supplementary Information: 15 pages, 12 figures, 2 notes

Journal ref: Communications Physics 3, 10 (2020)

Silicon-vacancy color centers in Si- and Si,P-doped nanodiamonds: thermal susceptibilities of photo luminescence band at 740 nm

Authors: Sumin Choi, Viatcheslav N. Agafonov, Valery A. Davydov, L. F. Kulikova, Taras Plakhotnik

Abstract: We have characterized thermal susceptibilities of the spectral band at 740 nm of silicon-vacancy (SiV) centers in Si- and Si,P-doped nanodiamonds over a temperature range from 295 K to 350 K, which is of interest for thermometry in biological systems. Si-doped crystals reveal linear dependence of the SiV zero-phonon line position, width and relative amplitude with susceptibilities of 0.0126(4) nm/… ▽ More We have characterized thermal susceptibilities of the spectral band at 740 nm of silicon-vacancy (SiV) centers in Si- and Si,P-doped nanodiamonds over a temperature range from 295 K to 350 K, which is of interest for thermometry in biological systems. Si-doped crystals reveal linear dependence of the SiV zero-phonon line position, width and relative amplitude with susceptibilities of 0.0126(4) nm/K, 0.062(2) nm/K and $-0.037(2)$ K$^{-1}$, respectively. Si,P-doped nanodiamonds show significantly smaller (up to 35 % for the width) susceptibilities and prove control of SiV properties with additional chemical doping. It is argued that a significant contribution to the heating of the nanodiamonds induced by laser light can be intrinsic due to a high concentration and low luminescence quantum yield of SiV centers. △ Less

Submitted 23 June, 2019; originally announced June 2019.

Comments: 3 figure, 4 pages

Unidirectional single-photon emission from germanium-vacancy zero-phonon lines: Deterministic emitter-waveguide interfacing at plasmonic hot spots

Authors: Hamidreza Siampour, Ou Wang, Vladimir A. Zenin, Sergejs Boroviks, Petr Siyushev, Yuanqing Yang, Valery A. Davydov, Liudmila F. Kulikova, Viatcheslav N. Agafonov, Alexander Kubanek, N. Asger Mortensen, Fedor Jelezko, Sergey I. Bozhevolnyi

Abstract: Striving for nanometer-sized solid-state single-photon sources, we investigate atom-like quantum emitters based on single germanium vacancy (GeV) centers isolated in crystalline nanodiamonds (NDs). Cryogenic characterization indicated symmetry-protected and bright (> 10^6 counts/s with off-resonance excitation) zero-phonon optical transitions with up to 6-fold enhancement in energy splitting of th… ▽ More Striving for nanometer-sized solid-state single-photon sources, we investigate atom-like quantum emitters based on single germanium vacancy (GeV) centers isolated in crystalline nanodiamonds (NDs). Cryogenic characterization indicated symmetry-protected and bright (> 10^6 counts/s with off-resonance excitation) zero-phonon optical transitions with up to 6-fold enhancement in energy splitting of their ground states as compared to that found for GeV centers in bulk diamonds (i.e., up to 870 GHz in highly strained NDs vs 150 GHz in bulk). Utilizing lithographic alignment techniques, we demonstrate an integrated nanophotonic platform for deterministic interfacing plasmonic waveguides with isolated GeV centers in NDs that enables 10-fold enhancement of single-photon decay rates along with the emission direction control by judiciously designing and positioning a Bragg reflector. This approach allows one to realize the unidirectional emission from single-photon dipolar sources introducing a novel method that is alternative to the propagation-direction-dependent techniques based on chiral interactions or topological protection. The developed plasmon-based nanophotonic platform opens thereby new perspectives for quantum nanophotonics in general and for realizing entanglement between single photons and spin qubits, in particular. △ Less

Submitted 13 March, 2019; originally announced March 2019.

Journal ref: Nanophotonics 9, 953 (2020)

Observation of sub-kelvin superconductivity in Cd$_3$As$_2$ thin films

Authors: A. V. Suslov, A. B. Davydov, L. N. Oveshnikov, L. A. Morgun, K. I. Kugel, V. S. Zakhvalinskii, E. A. Pilyuk, A. V. Kochura, A. P. Kuzmenko, V. M. Pudalov, B. A. Aronzon

Abstract: We report the first experimental observation of superconductivity in Cd$_3$As$_2$ thin films without application of external pressure. Surface studies suggest that the observed transport characteristics are related to the polycrystalline continuous part of investigated films with homogeneous distribution of elements and the Cd-to-As ratio close to stoichiometric Cd$_3$As$_2$. The latter is also su… ▽ More We report the first experimental observation of superconductivity in Cd$_3$As$_2$ thin films without application of external pressure. Surface studies suggest that the observed transport characteristics are related to the polycrystalline continuous part of investigated films with homogeneous distribution of elements and the Cd-to-As ratio close to stoichiometric Cd$_3$As$_2$. The latter is also supported by Raman spectra of the studied films, which are similar to those of Cd$_3$As$_2$ single crystals. The formation of superconducting phase in films under study is confirmed by the characteristic behavior of temperature and magnetic field dependence of samples resistances, as well as by the presence of pronounced zero-resistance plateaux in $dV/dI$ characteristics. The corresponding $H_c-T_c$ plots reveal a clearly pronounced linear behavior within the intermediate temperature range, similar to that observed for bulk Cd$_3$As$_2$ and Bi$_2$Se$_3$ films under pressure, suggesting the possibility of nontrivial pairing in the films under investigation. We discuss a possible role of sample inhomogeneities and crystal strains in the observed phenomena. △ Less

Submitted 14 November, 2018; originally announced November 2018.

Journal ref: Phys. Rev. B 99, 094512 (2019)

Essentially non-perturbative and peculiar polarization effects in planar QED with strong coupling

Authors: Yu. Voronina, K. Sveshnikov, P. Grashin, A. Davydov

Abstract: The essentially non-perturbative polarization effects are considered for a planar supercritical Dirac-Coulomb system with strong coupling (similar to graphene and graphene-based heterostructures) in terms of induced charge density $ρ_{VP}(\vec{r})$. The main attention is paid to the renormalization, convergence of the partial expansion and the behavior of $ρ_{VP}(\vec{r})$ and the integral induced… ▽ More The essentially non-perturbative polarization effects are considered for a planar supercritical Dirac-Coulomb system with strong coupling (similar to graphene and graphene-based heterostructures) in terms of induced charge density $ρ_{VP}(\vec{r})$. The main attention is paid to the renormalization, convergence of the partial expansion and the behavior of $ρ_{VP}(\vec{r})$ and the integral induced charge $Q_{VP}$ in the overcritical region. The dependence of the induced density on the screening of the Coulomb asymptotics of the external source is also explored in detail. Some peculiar effects in the discrete spectrum with the lowest rotational numbers $m_j=\pm 1/2\, , \pm3/2$ in the screened case are detected and their possible role in the transition through corresponding $Z_{cr}$ is also discussed. △ Less

Submitted 25 July, 2018; v1 submitted 27 May, 2018; originally announced May 2018.

Comments: Revised abstract, introduction (part 1) and conclusion (part 6), results unchanged. arXiv admin note: substantial text overlap with arXiv:1802.05336

High temperature magnetism and microstructure of semiconducting ferromagnetic alloy (GaSb)$_{1-x}$(MnSb)$_{x}$

Authors: L. N. Oveshnikov, E. I. Nekhaeva, A. V. Kochura, A. B. Davydov, M. A. Shakhov, S. F. Marenkin, O. A. Novodvorskii, A. P. Kuzmenko, A. L. Vasiliev, B. A. Aronzon, E. Lahderanta

Abstract: We have studied the properties of relatively thick (about 120 nm) magnetic composite films grown by pulsed laser deposition method using (GaSb)$_{0.59}$(MnSb)$_{0.41}$ eutectic compound as a target for sputtering. For the studied films we have observed ferromagnetism and anomalous Hall effect above the room temperature, it manifests the presence of spin-polarized carriers. Electron microscopy, ato… ▽ More We have studied the properties of relatively thick (about 120 nm) magnetic composite films grown by pulsed laser deposition method using (GaSb)$_{0.59}$(MnSb)$_{0.41}$ eutectic compound as a target for sputtering. For the studied films we have observed ferromagnetism and anomalous Hall effect above the room temperature, it manifests the presence of spin-polarized carriers. Electron microscopy, atomic and magnetic force microscopy results suggests that films under study have homogenous columnar structure in the bulk while MnSb inclusions accumulate near it's surface. This is in good agreement with high mobility values of charge carriers. Based on our data we conclude that room temperature magnetic and magnetotransport properties of the films are defined by MnSb inclusions. △ Less

Submitted 18 March, 2018; originally announced March 2018.

Comments: 7 pages, 6 figures (total of 19 panels)

Casimir (vacuum) energy in planar QED with strong coupling

Authors: Yu. Voronina, K. Sveshnikov, P. Grashin, A. Davydov

Abstract: The essentially non-perturbative vacuum polarization effects, caused by an extended external supercritical Coulomb source, are explored for a planar Dirac-Coulomb (DC) system with strong coupling (similar to graphene and graphene-based heterostructures). Taking account of results, obtained in \cite{partI2018} for the induced charge density $ρ_{VP}(\vec{r})$, in the present paper the evaluation of… ▽ More The essentially non-perturbative vacuum polarization effects, caused by an extended external supercritical Coulomb source, are explored for a planar Dirac-Coulomb (DC) system with strong coupling (similar to graphene and graphene-based heterostructures). Taking account of results, obtained in \cite{partI2018} for the induced charge density $ρ_{VP}(\vec{r})$, in the present paper the evaluation of the Casimir (vacuum) energy $\mathcal{E}_{VP}$ is presented. The main result is that for a wide range of the system parameters in the overcritical region $\mathcal{E}_{VP}$ turns out to be a rapidly decreasing negative function $\sim - Z^3/R_0\, $ with $Z\, , R_0$ being the charge and the size of the external source. By an explicit calculation the possibility for complete screening of the electrostatic reflection self-energy of the external source by such polarization effects for $Z \gg Z_{cr,1}$ is demonstrated. The dependence of the Casimir energy on the screening of the Coulomb asymptotics of the external source at some $R_1>R_0$ is also explored in detail, and some peculiar effects in the partial channels with the lowest rotational numbers $m_j=\pm 1/2\, , \pm3/2$ in the screened case are also discussed. △ Less

Submitted 25 July, 2018; v1 submitted 14 February, 2018; originally announced February 2018.

Comments: Revised abstract and introduction(part 1). The screening of the external source was replaced by a more physical one(parts 4-5). Revised conclusion(part 6)

Single SiV$^-$ centers in low-strain nanodiamonds with bulk-like spectral properties and nano-manipulation capabilities

Authors: Lachlan J. Rogers, Ou Wang, Yan Liu, Lukas Antoniuk, Christian Osterkamp, Valery A. Davydov, Viatcheslav N. Agafonov, Andrea B. Filipovski, Fedor Jelezko, Alexander Kubanek

Abstract: We report on the isolation of single SiV$^-$ centers in nanodiamonds. We observe the fine-structure of single SiV$^-$ center with improved inhomogeneous ensemble linewidth below the excited state splitting, stable optical transitions, good polarization contrast and excellent spectral stability under resonant excitation. Based on our experimental results we elaborate an analytical strain model wher… ▽ More We report on the isolation of single SiV$^-$ centers in nanodiamonds. We observe the fine-structure of single SiV$^-$ center with improved inhomogeneous ensemble linewidth below the excited state splitting, stable optical transitions, good polarization contrast and excellent spectral stability under resonant excitation. Based on our experimental results we elaborate an analytical strain model where we extract the ratio between strain coefficients of excited and ground states as well the intrinsic zero-strain spin-orbit splittings. The observed strain values are as low as best values in low-strain bulk diamond. We achieve our results by means of H-plasma treatment of the diamond surface and in combination with resonant and off-resonant excitation. Our work paves the way for indistinguishable, single photon emission. Furthermore, we demonstrate controlled nano-manipulation via atomic force microscope cantilever of 1D- and 2D-alignments with a so-far unreached accuracy of about 10nm, as well as new tools including dipole rotation and cluster decomposition. Combined, our results show the potential to utilize SiV$^-$ centers in nanodiamonds for the controlled interfacing via optical coupling of individually well-isolated atoms for bottom-up assemblies of complex quantum systems. △ Less

Submitted 23 November, 2018; v1 submitted 10 February, 2018; originally announced February 2018.

Journal ref: Phys. Rev. Applied 11, 024073 (2019)

On-chip excitation of single germanium-vacancies in nanodiamonds embedded in plasmonic waveguides

Authors: Hamidreza Siampour, Shailesh Kumar, Valery A. Davydov, Liudmila F. Kulikova, Viatcheslav N. Agafonov, Sergey I. Bozhevolnyi

Abstract: Monolithic integration of quantum emitters in nanoscale plasmonic circuitry requires low-loss plasmonic configurations capable of confining light well below the diffraction limit. We demonstrate on-chip remote excitation of nanodiamond-embedded single quantum emitters by plasmonic modes of dielectric ridges atop colloidal silver crystals. The nanodiamonds are produced to incorporate single germani… ▽ More Monolithic integration of quantum emitters in nanoscale plasmonic circuitry requires low-loss plasmonic configurations capable of confining light well below the diffraction limit. We demonstrate on-chip remote excitation of nanodiamond-embedded single quantum emitters by plasmonic modes of dielectric ridges atop colloidal silver crystals. The nanodiamonds are produced to incorporate single germanium-vacancy (GeV) centers, providing bright, spectrally narrow and stable single-photon sources suitable for highly integrated circuits. Using electron-beam lithography with hydrogen silsesquioxane (HSQ) resist, dielectric-loaded surface plasmon polariton waveguides (DLSPPWs) are fabricated on single crystalline silver plates so as to contain those of spin-casted nanodiamonds that are found to feature appropriate single GeV centers. The low-loss plasmonic configuration enabled the 532 nm pump laser light to propagate on-chip in the DLSPPW and reach to an embedded nanodiamond where a single GeV center is incorporated. The remote GeV emitter is thereby excited and coupled to spatially confined DLSPPW modes with an outstanding figure-of-merit of 180 due to a ~6-fold Purcell enhancement, ~56% coupling efficiency and ~33 μm transmission length, revealing the potential of our approach for on-chip realization of nanoscale functional quantum devices. △ Less

Submitted 30 January, 2018; originally announced January 2018.

Journal ref: Light: Science & Applications 7, 61 (2018)

Varying temperature and silicon content in nanodiamond growth: effects on silicon-vacancy centers

Authors: Sumin Choi, Victor Leong, Valery A. Davydov, Viatcheslav N. Agafonov, Marcus W. O. Cheong, Dmitry A. Kalashnikov, Leonid A. Krivitsky

Abstract: Nanodiamonds containing color centers open up many applications in quantum information processing, metrology, and quantum sensing. In particular, silicon vacancy (SiV) centers are prominent candidates as quantum emitters due to their beneficial optical qualities. Here we characterize nanodiamonds produced by a high-pressure high-temperature method without catalyst metals, focusing on two samples w… ▽ More Nanodiamonds containing color centers open up many applications in quantum information processing, metrology, and quantum sensing. In particular, silicon vacancy (SiV) centers are prominent candidates as quantum emitters due to their beneficial optical qualities. Here we characterize nanodiamonds produced by a high-pressure high-temperature method without catalyst metals, focusing on two samples with clear SiV signatures. Different growth temperatures and relative content of silicon in the initial compound between the samples altered their nanodiamond size distributions and abundance of SiV centers. Our results show that nanodiamond growth can be controlled and optimized for different applications. △ Less

Submitted 16 October, 2017; originally announced October 2017.

Journal ref: Scientific Reports 8, 3792 (2018)

Electric field induced semiconductor-to-metal phase transition in vertical MoTe2 and Mo1-xWxTe2 devices

Authors: Feng Zhang, Sergiy Krylyuk, Huairuo Zhang, Cory A. Milligan, Dmitry Y. Zemlyanov, Leonid A. Bendersky, Albert V. Davydov, Joerg Appenzeller

Abstract: Over the past years, transition metal dichalcogenides (TMDs) have attracted attention as potential building blocks for various electronic applications due to their atomically thin nature. An exciting development is the recent success in 'engineering' crystal phases of TMD compounds during the growth due to their polymorphic character. Here, we report an electric field induced reversible engineered… ▽ More Over the past years, transition metal dichalcogenides (TMDs) have attracted attention as potential building blocks for various electronic applications due to their atomically thin nature. An exciting development is the recent success in 'engineering' crystal phases of TMD compounds during the growth due to their polymorphic character. Here, we report an electric field induced reversible engineered phase transition in vertical 2H-MoTe2 devices, a crucial experimental finding that enables electrical phase switching for these ultra-thin layered materials. Scanning tunneling microscopy (STM) was utilized to analyze the TMD crystalline structure after applying an electric field, and scanning tunneling spectroscopy (STS) was employed to map a semiconductor-to-metal phase transition on the nanoscale. In addition, direct confirmation of a phase transition from 2H semiconductor to a distorted 2H' metallic phase was obtained by scanning transmission electron microscopy (STEM). MoTe2 and Mo1-xWxTe2 alloy based vertical resistive random access memory (RRAM) cells were fabricated to demonstrate clear reproducible and controlled switching with programming voltages that are tunable by the layer thickness and that show a distinctly different trend for the binary compound if compared to the ternary materials. △ Less

Submitted 12 September, 2017; originally announced September 2017.

All-optical nanoscale thermometry with silicon-vacancy centers in diamond

Authors: Christian T. Nguyen, Ruffin E. Evans, Alp Sipahigil, Mihir K. Bhaskar, Denis D. Sukachev, Viatcheslav N. Agafonov, Valery A. Davydov, Liudmila F. Kulikova, Fedor Jelezko, Mikhail D. Lukin

Abstract: We demonstrate an all-optical thermometer based on an ensemble of silicon-vacancy centers (SiVs) in diamond by utilizing a temperature dependent shift of the SiV optical zero-phonon line transition frequency, $Δλ/ΔT= 6.8\,\mathrm{GHz/K}$. Using SiVs in bulk diamond, we achieve $70\,\mathrm{mK}$ precision at room temperature with a sensitivity of $360\,\mathrm{mK/\sqrt{Hz}}$. Finally, we use SiVs i… ▽ More We demonstrate an all-optical thermometer based on an ensemble of silicon-vacancy centers (SiVs) in diamond by utilizing a temperature dependent shift of the SiV optical zero-phonon line transition frequency, $Δλ/ΔT= 6.8\,\mathrm{GHz/K}$. Using SiVs in bulk diamond, we achieve $70\,\mathrm{mK}$ precision at room temperature with a sensitivity of $360\,\mathrm{mK/\sqrt{Hz}}$. Finally, we use SiVs in $200\,\mathrm{nm}$ nanodiamonds as local temperature probes with $521\,\mathrm{ mK/\sqrt{Hz}}$ sensitivity. These results open up new possibilities for nanoscale thermometry in biology, chemistry, and physics, paving the way for control of complex nanoscale systems. △ Less

Submitted 17 August, 2017; originally announced August 2017.

Comments: 5 pages, 3 figures

Journal ref: Appl. Phys. Lett. 112, 203102 (2018)

Strain Engineering a $4a\times\sqrt{3}a$ Charge Density Wave Phase in Transition Metal Dichalcogenide 1T-VSe$_2$

Authors: Duming Zhang, Jeonghoon Ha, Hongwoo Baek, Yang-Hao Chan, Fabian D. Natterer, Alline F. Myers, Joshua D. Schumacher, William G. Cullen, Albert V. Davydov, Young Kuk, M. Y. Chou, Nikolai B. Zhitenev, Joseph A. Stroscio

Abstract: We report a rectangular charge density wave (CDW) phase in strained 1T-VSe$_2$ thin films synthesized by molecular beam epitaxy on c-sapphire substrates. The observed CDW structure exhibits an unconventional rectangular 4a{\times}{\sqrt{3a}} periodicity, as opposed to the previously reported hexagonal $4a\times4a$ structure in bulk crystals and exfoliated thin layered samples. Tunneling spectrosco… ▽ More We report a rectangular charge density wave (CDW) phase in strained 1T-VSe$_2$ thin films synthesized by molecular beam epitaxy on c-sapphire substrates. The observed CDW structure exhibits an unconventional rectangular 4a{\times}{\sqrt{3a}} periodicity, as opposed to the previously reported hexagonal $4a\times4a$ structure in bulk crystals and exfoliated thin layered samples. Tunneling spectroscopy shows a strong modulation of the local density of states of the same $4a\times\sqrt{3}a$ CDW periodicity and an energy gap of $2Δ_{CDW}=(9.1\pm0.1)$ meV. The CDW energy gap evolves into a full gap at temperatures below 500 mK, indicating a transition to an insulating phase at ultra-low temperatures. First-principles calculations confirm the stability of both $4a\times4a$ and $4a\times\sqrt{3}a$ structures arising from soft modes in the phonon dispersion. The unconventional structure becomes preferred in the presence of strain, in agreement with experimental findings. △ Less

Submitted 20 July, 2017; originally announced July 2017.

Journal ref: Physical Review Materials, 1, 024005 (2017)

Evolution of Raman spectra in Mo$_{1-x}$W$_x$Te$_2$ alloys

Authors: Sean M. Oliver, Ryan Beams, Sergiy Krylyuk, Irina Kalish, Arunima K. Singh, Alina Bruma, Francesca Tavazza, Jaydeep Joshi, Iris R. Stone, Stephan J. Stranick, Albert V. Davydov, Patrick M. Vora

Abstract: The structural polymorphism in transition metal dichalcogenides (TMDs) provides exciting opportunities for developing advanced electronics. For example, MoTe$_2$ crystallizes in the 2H semiconducting phase at ambient temperature and pressure, but transitions into the 1T$^\prime$ semimetallic phase at high temperatures. Alloying MoTe$_2$ with WTe$_2$ reduces the energy barrier between these two pha… ▽ More The structural polymorphism in transition metal dichalcogenides (TMDs) provides exciting opportunities for developing advanced electronics. For example, MoTe$_2$ crystallizes in the 2H semiconducting phase at ambient temperature and pressure, but transitions into the 1T$^\prime$ semimetallic phase at high temperatures. Alloying MoTe$_2$ with WTe$_2$ reduces the energy barrier between these two phases, while also allowing access to the T$_d$ Weyl semimetal phase. The MoWTe$_2$ alloy system is therefore promising for developing phase change memory technology. However, achieving this goal necessitates a detailed understanding of the phase composition in the MoTe$_2$-WTe$_2$ system. We combine polarization-resolved Raman spectroscopy with X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM) to study MoWTe$_2$ alloys over the full compositional range x from 0 to 1. We identify Raman and XRD signatures characteristic of the 2H, 1T$^\prime$, and T$_d$ structural phases that agree with density-functional theory (DFT) calculations, and use them to identify phase fields in the MoTe$_2$-WTe$_2$ system, including single-phase 2H, 1T$^\prime$, and T$_d$ regions, as well as a two-phase 1T$^\prime$ + T$_d$ region. Disorder arising from compositional fluctuations in MoWTe$_2$ alloys breaks inversion and translational symmetry, leading to the activation of an infrared 1T$^\prime$-MoTe$_2$ mode and the enhancement of a double-resonance Raman process in 2H-MoWTe$_2$ alloys. Compositional fluctuations limit the phonon correlation length, which we estimate by fitting the observed asymmetric Raman lineshapes with a phonon confinement model. These observations reveal the important role of disorder in MoWTe$_2$ alloys, clarify the structural phase boundaries, and provide a foundation for future explorations of phase transitions and electronic phenomena in this system. △ Less

Submitted 31 March, 2017; originally announced March 2017.

Comments: 18 pages, 5 figures, 1 table

Journal ref: 2D Materials 4 045008, 2017