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A high-efficiency programmable modulator for extreme ultraviolet light with nm feature size based on an electronic phase transition
Authors:
Igor Vaskivskyi,
Anze Mraz,
Rok Venturini,
Gregor Jecl,
Yevhenii Vaskivskyi,
Riccardo Mincigrucci,
Laura Foglia,
Dario De Angelis,
Jacopo-Stefano Pelli-Cresi,
Ettore Paltanin,
Danny Fainozzi,
Filippo Bencivenga,
Claudio Masciovecchio,
Dragan Mihailovic
Abstract:
The absence of efficient light modulators for extreme ultraviolet (EUV) and X-ray photons significantly limits their real-life application, particularly when even slight complexity of the beam patterns is required. Here we report on a novel approach to reversible imprinting of a holographic mask in an electronic Wigner crystal material with a sub-90 nm feature size. The structure is imprinted on a…
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The absence of efficient light modulators for extreme ultraviolet (EUV) and X-ray photons significantly limits their real-life application, particularly when even slight complexity of the beam patterns is required. Here we report on a novel approach to reversible imprinting of a holographic mask in an electronic Wigner crystal material with a sub-90 nm feature size. The structure is imprinted on a sub-picosecond time-scale using EUV laser pulses and acts as a high-efficiency diffraction grating that deflects EUV or soft X-ray light. The imprinted nanostructure is stable after the removal of the exciting beams at low temperatures but can be easily erased by a single heating beam. Modeling shows that the efficiency of the device can exceed 1%, approaching state-of-the-art etched gratings, but with the benefit of being programmable and tunable over a large range of wavelengths. The observed effect is based on the rapid change of lattice constant upon transition between metastable electronically-ordered phases in a layered transition metal dichalcogenide. The proposed approach is potentially useful for creating tunable light modulators in the EUV and soft X-ray spectral ranges.
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Submitted 15 November, 2023;
originally announced November 2023.
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Nanocryotron-driven Charge Configuration Memory
Authors:
Anze Mraz,
Viktor V. Kabanov,
Dragan Mihailovic
Abstract:
Cryo-computing is presently severely limited by the absence of a suitable fast and energy efficient cryo-memory. Ideally, such memory should be compatible with single-flux quantum (SFQ) logic in terms of speed, switching energy and matching impedance. Here we present an implementation of non-volatile charge configuration memory (CCM) in a cryo-computing environment by combining it in parallel with…
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Cryo-computing is presently severely limited by the absence of a suitable fast and energy efficient cryo-memory. Ideally, such memory should be compatible with single-flux quantum (SFQ) logic in terms of speed, switching energy and matching impedance. Here we present an implementation of non-volatile charge configuration memory (CCM) in a cryo-computing environment by combining it in parallel with a pulse-triggered superconducting nanowire cryotron (nTron). The combined device is modeled in terms of the dynamical response of the SC order parameter in a current-controlled nanowire with a CCM shunt. Analysis of timedynamics and current-voltage characteristics based on measured device parameters show that single flux quantum (SFQ)-level pulses can drive non-volatile CCM on the picosecond timescale, while allowing the nTron to operate in non-latching mode. The inherent high energy efficiency and ultrahigh speed makes this hybrid device an ideal memory for use in cryo-computing and quantum computing peripheral devices.
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Submitted 28 March, 2022;
originally announced March 2022.
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Ultra-Efficient Resistance Switching between Charge Ordered Phases in 1T-TaS$_2$ with a Single Picosecond Electrical Pulse
Authors:
Rok Venturini,
Anže Mraz,
Igor Vaskivskyi,
Yevhenii Vaskivskyi,
Damjan Svetin,
Tomaž Mertelj,
Leon Pavlovič,
Jing Cheng,
Genyu Chen,
Priyanthi Amarasinghe,
Syed B. Qadri,
Sudhir B. Trivedi,
Roman Sobolewski,
Dragan Mihailovic
Abstract:
Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of the 1T-TaS$_2$ has shown to be potentially useful for the development of high-speed, energy efficient non-volatile memory device. While ultrafast switching was p…
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Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of the 1T-TaS$_2$ has shown to be potentially useful for the development of high-speed, energy efficient non-volatile memory device. While ultrafast switching was previously reported with optical pulses, determination of the intrinsic speed limits of actual devices that are triggered by electrical pulses is technically challenging and hitherto still largely unexplored. A new optoelectronic laboratory-on-a-chip, designed for measurements of ultrafast memory switching, enables an accurate measurement of the electrical switching parameters with 100 fs temporal resolution. A photoconductive response is used for ultrashort electrical pulse generation, while its propagation along a coplanar transmission line is detected using electro-optical sampling using a purpose-grown highly-resistive electro-optic (Cd,Mn)Te crystal substrate. By combining the transmission line and the 1T-TaS$_2$ device in a single optoelectronic circuit a non-volatile resistance switching with a single 1.9 ps electrical pulse is demonstrated, with an extremely small switching energy density per unit area E$_A$ = 9.4 fJ/$μ$m$^2$. The experiments demonstrate ultrafast, energy-efficient circuits utilizing switching between non-volatile charge-ordered states offers a new technological platform for cryogenic memory devices.
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Submitted 29 June, 2022; v1 submitted 28 February, 2022;
originally announced February 2022.
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Energy efficient manipulation of topologically protected states in non-volatile ultrafast charge configuration memory devices
Authors:
Anze Mraz,
Rok Venturini,
Michele Diego,
Andrej Kranjec,
Damjan Svetin,
Yaroslav Gerasimenko,
Vitomir Sever,
Ian A. Mihailovic,
Jan Ravnik,
Igor Vaskivskyi,
Maria D'Antuono,
Daniela Stornaiulo,
Francesco Tafuri,
Dimitrios Kazazis,
Yasin Ekinci,
Dragan Mihailovic
Abstract:
Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of converting the information-carrying charge current into magnetization switching sets fundamental limitations in energy consumption. Other non-magnetic non-volatile…
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Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of converting the information-carrying charge current into magnetization switching sets fundamental limitations in energy consumption. Other non-magnetic non-volatile memories such as memristors, ferroelectric memory and phase change memory devices also rely on energetically relatively costly crystal structural rearrangements to store information. In contrast, conventional electronic charge states in quantum dots for example, can be switched in femtoseconds with high efficiency, but any stored information dissipates rapidly. Here we present a radically different approach in the form of a charge-configuration memory (CCM) device that relies on charge-injection-driven electronic crystal melting and topological protection of the resulting electronic domain configurations of a two-dimensional electronic crystal to store information. With multiprobe scanning tunneling microscopy (STM) we show microscopically, within an operational device, how dislocations in the domain ordering lead to metastability by a mechanism that is topologically equivalent to magnetic bubble memory. The devices have a very small switching energy (<2.2 fJ/bit), ultrafast switching speed of <11 ps and operational range over more than 3 orders of magnitude in temperature (<250 mK ~ 190 K). Together with their simple functionality, a large resistance switching ratio, straightforward fabrication and impressive endurance, CCM devices introduce a new memory paradigm in emerging cryo-computing and other high-performance computing applications that require ultrahigh speed and low energy consumption.
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Submitted 8 March, 2021;
originally announced March 2021.
