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Ultra-Efficient Resistance Switching between Charge Ordered Phases in 1T-TaS$_2$ with a Single Picosecond Electrical Pulse
Authors:
Rok Venturini,
Anže Mraz,
Igor Vaskivskyi,
Yevhenii Vaskivskyi,
Damjan Svetin,
Tomaž Mertelj,
Leon Pavlovič,
Jing Cheng,
Genyu Chen,
Priyanthi Amarasinghe,
Syed B. Qadri,
Sudhir B. Trivedi,
Roman Sobolewski,
Dragan Mihailovic
Abstract:
Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of the 1T-TaS$_2$ has shown to be potentially useful for the development of high-speed, energy efficient non-volatile memory device. While ultrafast switching was p…
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Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of the 1T-TaS$_2$ has shown to be potentially useful for the development of high-speed, energy efficient non-volatile memory device. While ultrafast switching was previously reported with optical pulses, determination of the intrinsic speed limits of actual devices that are triggered by electrical pulses is technically challenging and hitherto still largely unexplored. A new optoelectronic laboratory-on-a-chip, designed for measurements of ultrafast memory switching, enables an accurate measurement of the electrical switching parameters with 100 fs temporal resolution. A photoconductive response is used for ultrashort electrical pulse generation, while its propagation along a coplanar transmission line is detected using electro-optical sampling using a purpose-grown highly-resistive electro-optic (Cd,Mn)Te crystal substrate. By combining the transmission line and the 1T-TaS$_2$ device in a single optoelectronic circuit a non-volatile resistance switching with a single 1.9 ps electrical pulse is demonstrated, with an extremely small switching energy density per unit area E$_A$ = 9.4 fJ/$μ$m$^2$. The experiments demonstrate ultrafast, energy-efficient circuits utilizing switching between non-volatile charge-ordered states offers a new technological platform for cryogenic memory devices.
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Submitted 29 June, 2022; v1 submitted 28 February, 2022;
originally announced February 2022.
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Transport spin polarization of Ni_xFe_{1-x}: electronic kinematics and band structure
Authors:
B. Nadgorny,
R. J. Soulen, Jr.,
M. S. Osofsky,
I. I. Mazin,
G. Laprade,
R. J. M. van de Veerdonk,
A. A. Smits,
S. F. Cheng,
E. F. Skelton,
S. B. Qadri
Abstract:
We present measurements of the transport spin polarization of Ni_xFe_{1-x} (0<x<1) using the recently-developed Point Contact Andreev Reflection technique, and compare them with our first principles calculations of the spin polarization for this system. Surpisingly, the measured spin polarization is almost composition-independent. The results clearly demonstrate that the sign of the transport sp…
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We present measurements of the transport spin polarization of Ni_xFe_{1-x} (0<x<1) using the recently-developed Point Contact Andreev Reflection technique, and compare them with our first principles calculations of the spin polarization for this system. Surpisingly, the measured spin polarization is almost composition-independent. The results clearly demonstrate that the sign of the transport spin polarization does not coincide with that of the difference of the densities of states at the Fermi level. Calculations indicate that the independence of the spin polarization of the composition is due to compensation of density of states and Fermi velocity in the s- and d- bands.
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Submitted 9 November, 1999; v1 submitted 7 May, 1999;
originally announced May 1999.
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Characterization of transport and magnetic properties in thin film La(0.67)(Ca(x)Sr(1-x))(0.33)MnO(3) mixtures
Authors:
P. R. Broussard,
S. B. Qadri,
V. M. Browning,
V. C. Cestone
Abstract:
We have grown thin films of (100) oriented La_{0.67}(Ca_{x}Sr_{1-x})_{0.33}MnO_{3} on (100) NdGaO_{3} substrates by off-axis sputtering. We have looked at the changes in the resistivity and magnetoresistance of the samples as the Ca/Sr ratio was varied. We find that as the calcium fraction is decreased, the lattice match to the substrate decreases, and the films become more disordered, as observ…
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We have grown thin films of (100) oriented La_{0.67}(Ca_{x}Sr_{1-x})_{0.33}MnO_{3} on (100) NdGaO_{3} substrates by off-axis sputtering. We have looked at the changes in the resistivity and magnetoresistance of the samples as the Ca/Sr ratio was varied. We find that as the calcium fraction is decreased, the lattice match to the substrate decreases, and the films become more disordered, as observed in transport measurements and the variation in Curie and peak resistance temperatures. We find a correlation between the temperature independent and T^2 terms to the low temperature resistivity. The room temperature magnetoresistance exhibits a maximum as the peak temperature is increased by the substitution of Sr for Ca, and a change in the field dependence to the resistivity at room temperature is observed.
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Submitted 1 February, 1999;
originally announced February 1999.
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X-ray photoemission spectroscopy of La(0.67)Ca(0.33)MnO(3) films
Authors:
P. R. Broussard,
S. B. Qadri,
V. C. Cestone
Abstract:
We have performed x-ray photoemission spectroscopy (XPS) on thin films of (001) and (200) oriented La(0.67)Ca(0.33)MnO(3) grown on (100) and (110) SrTiO(3) substrates by off-axis sputtering. The films were examined by XPS without exposing them to air. We have compared the core levels and the valence spectra between the two different orientations, as well as after the effects of air exposure and…
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We have performed x-ray photoemission spectroscopy (XPS) on thin films of (001) and (200) oriented La(0.67)Ca(0.33)MnO(3) grown on (100) and (110) SrTiO(3) substrates by off-axis sputtering. The films were examined by XPS without exposing them to air. We have compared the core levels and the valence spectra between the two different orientations, as well as after the effects of air exposure and annealing in UHV. We find that the surfaces are very stable against exposure to air. Comparing the measured intensity ratios to a model for the uniform termination of the film shows the terminating layer to be MnO(2) for both the (001) and (200) oriented La(0.67)Ca(0.33)MnO(3) films.
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Submitted 7 May, 1997;
originally announced May 1997.
