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Ultra-Efficient Resistance Switching between Charge Ordered Phases in 1T-TaS$_2$ with a Single Picosecond Electrical Pulse
Authors:
Rok Venturini,
Anže Mraz,
Igor Vaskivskyi,
Yevhenii Vaskivskyi,
Damjan Svetin,
Tomaž Mertelj,
Leon Pavlovič,
Jing Cheng,
Genyu Chen,
Priyanthi Amarasinghe,
Syed B. Qadri,
Sudhir B. Trivedi,
Roman Sobolewski,
Dragan Mihailovic
Abstract:
Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of the 1T-TaS$_2$ has shown to be potentially useful for the development of high-speed, energy efficient non-volatile memory device. While ultrafast switching was p…
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Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of the 1T-TaS$_2$ has shown to be potentially useful for the development of high-speed, energy efficient non-volatile memory device. While ultrafast switching was previously reported with optical pulses, determination of the intrinsic speed limits of actual devices that are triggered by electrical pulses is technically challenging and hitherto still largely unexplored. A new optoelectronic laboratory-on-a-chip, designed for measurements of ultrafast memory switching, enables an accurate measurement of the electrical switching parameters with 100 fs temporal resolution. A photoconductive response is used for ultrashort electrical pulse generation, while its propagation along a coplanar transmission line is detected using electro-optical sampling using a purpose-grown highly-resistive electro-optic (Cd,Mn)Te crystal substrate. By combining the transmission line and the 1T-TaS$_2$ device in a single optoelectronic circuit a non-volatile resistance switching with a single 1.9 ps electrical pulse is demonstrated, with an extremely small switching energy density per unit area E$_A$ = 9.4 fJ/$μ$m$^2$. The experiments demonstrate ultrafast, energy-efficient circuits utilizing switching between non-volatile charge-ordered states offers a new technological platform for cryogenic memory devices.
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Submitted 29 June, 2022; v1 submitted 28 February, 2022;
originally announced February 2022.
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Hall effect anomaly near Tc and renormalized superconducting fluctuations in YBCO
Authors:
I. Puica,
W. Lang,
W. Goeb,
R. Sobolewski
Abstract:
Measurements of the Hall effect and the resistivity on precisely-patterned YBCO thin films in magnetic fields B from 0.5 to 6 T oriented parallel to the sample crystallographic c axis reveal a sign reversal of the Hall coefficient for B <= 3 T. The data are compared to the full, quantitative expressions based on the renormalized fluctuation model for the Hall conductivity. The model offers a sat…
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Measurements of the Hall effect and the resistivity on precisely-patterned YBCO thin films in magnetic fields B from 0.5 to 6 T oriented parallel to the sample crystallographic c axis reveal a sign reversal of the Hall coefficient for B <= 3 T. The data are compared to the full, quantitative expressions based on the renormalized fluctuation model for the Hall conductivity. The model offers a satisfactory understanding of the experimental results, for moderate fields and temperatures near the critical region, provided that the inhomogeneity of the critical temperature distribution is also taken into account. We also propose an approach how vortex pinning that strongly affects the magnitude of the Hall coefficient can be incorporated in the model.
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Submitted 23 January, 2004;
originally announced January 2004.
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Time-resolved dynamics of the superconducting two-gap state in MgB2 thin films
Authors:
Y. Xu,
M. Khafizov,
L. Satrapinsky,
P. Kus,
A. Plecenik,
R. Sobolewski
Abstract:
Femtosecond pump-probe studies show that carrier dynamics in MgB2 films is governed by the sub-ps electron-phonon (e-ph) relaxation present at all temperatures, the few-ps e-ph process well pronounced below 70 K, and the sub-ns superconducting relaxation below Tc. The amplitude of the superconducting component versus temperature follows the superposition of the isotropic dirty gap and the 3-dime…
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Femtosecond pump-probe studies show that carrier dynamics in MgB2 films is governed by the sub-ps electron-phonon (e-ph) relaxation present at all temperatures, the few-ps e-ph process well pronounced below 70 K, and the sub-ns superconducting relaxation below Tc. The amplitude of the superconducting component versus temperature follows the superposition of the isotropic dirty gap and the 3-dimensional gap dependences, closing at two different Tc values. The time constant of the few-ps relaxation exhibits a double-divergence at temperatures corresponding to the Tc's of the two gaps.
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Submitted 29 September, 2003;
originally announced September 2003.
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Superconducting properties of MgB2 thin films prepared on flexible plastic substrates
Authors:
P. Kus,
A. Plecenik,
L. Satrapinsky,
Y. Xu,
R. Sobolewski
Abstract:
Superconducting MgB2 thin films were prepared on 50-micrometer-thick, flexible polyamide Kapton-E foils by vacuum co-deposition of Mg and B precursors with nominal thickness of about 100 nm and a special ex-situ rapid annealing process in an Ar or vacuum atmosphere. In the optimal annealing process, the Mg-B films were heated to approximately 600 C, but at the same time, the backside of the stru…
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Superconducting MgB2 thin films were prepared on 50-micrometer-thick, flexible polyamide Kapton-E foils by vacuum co-deposition of Mg and B precursors with nominal thickness of about 100 nm and a special ex-situ rapid annealing process in an Ar or vacuum atmosphere. In the optimal annealing process, the Mg-B films were heated to approximately 600 C, but at the same time, the backside of the structures was attached to a water-cooled radiator to avoid overheating of the plastic substrate. The resulting MgB2 films were amorphous with the onset of the superconducting transition at T_(c,on) about 33 K and the transition width of approximately 3 K. The critical current density was > 7x10^5 A/cm^2 at 4.2 K, and its temperature dependence indicated a granular film composition with a network of intergranular weak links. The films could be deposited on large-area foils (up to 400 cm^2) and, after processing, cut into any shapes (e.g., stripes) with scissors or bent multiple times, without any observed degradation of their superconducting properties.
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Submitted 25 June, 2002; v1 submitted 24 June, 2002;
originally announced June 2002.
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Double sign reversal of the vortex Hall effect in YBa2Cu3O7-delta thin films in the strong pinning limit of low magnetic fields
Authors:
W. Goeb,
W. Liebich,
W. Lang,
I. Puica,
Roman Sobolewski,
R. Roessler,
J. D. Pedarnig,
D. Baeuerle
Abstract:
Measurements of the Hall effect and the resistivity in twinned YBa2Cu3O7-delta thin films in magnetic fields B oriented parallel to the crystallographic c-axis and to the twin boundaries reveal a double sign reversal of the Hall coefficient for B below 1 T. In high transport current densities, or with B tilted off the twin boundaries by 5 degrees, the second sign reversal vanishes. The power-law…
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Measurements of the Hall effect and the resistivity in twinned YBa2Cu3O7-delta thin films in magnetic fields B oriented parallel to the crystallographic c-axis and to the twin boundaries reveal a double sign reversal of the Hall coefficient for B below 1 T. In high transport current densities, or with B tilted off the twin boundaries by 5 degrees, the second sign reversal vanishes. The power-law scaling of the Hall conductivity to the longitudinal conductivity in the mixed state is strongly modified in the regime of the second sign reversal. Our observations are interpreted as strong, disorder-type dependent vortex pinning and confirm that the Hall conductivity in high temperature superconductors is not independent of pinning.
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Submitted 28 July, 2000;
originally announced July 2000.
