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From domain walls and the stripe phase to full suppression of charge density wave in the superconducting 1T-Ti$_{1-\text{x}}$Ta$_\text{x}$Se$_2$
Authors:
Q. Hu,
R. Venturini,
Y. Vaskivskyi,
J. Lipič,
Z. Jagličić,
D. Mihailovic
Abstract:
1T-TiSe$_2$ hosts a $2 \times 2 \times 2$ charge density wave (CDW) that is known to form the state with localized domains separated by the domain walls upon Cu intercalation. The CDW state with the domain wall network has attracted significant interest due to its coexistence with superconductivity. Here we present a scanning tunneling microscopy, transport and magnetic susceptibility study of 1T-…
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1T-TiSe$_2$ hosts a $2 \times 2 \times 2$ charge density wave (CDW) that is known to form the state with localized domains separated by the domain walls upon Cu intercalation. The CDW state with the domain wall network has attracted significant interest due to its coexistence with superconductivity. Here we present a scanning tunneling microscopy, transport and magnetic susceptibility study of 1T-Ti$_{1-\text{x}}$Ta$_\text{x}$Se$_2$. Ta substitution for Ti atoms allows us to perform experiments over the wide range of doping ($ 0 \leqslant \text{x} \leqslant 0.2$), providing access to a significantly broader phase diagram than Cu intercalation experiments. At x = 0.02, we observe a complex network of domains and domain walls. We identify two distinct types of domain walls and show their structure with atomic resolution. Additionally, an elusive symmetry-breaking stripe CDW is found at the light substitution of x = 0.02. We also measure highly substituted x = 0.2 crystals that are superconducting despite the full collapse of the CDW order. Our results uncover rich CDW physics in Ta-substituted 1T-TiSe2 crystals and illuminate the interplay between the CDW and superconductivity.
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Submitted 1 July, 2024;
originally announced July 2024.
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A high-efficiency programmable modulator for extreme ultraviolet light with nm feature size based on an electronic phase transition
Authors:
Igor Vaskivskyi,
Anze Mraz,
Rok Venturini,
Gregor Jecl,
Yevhenii Vaskivskyi,
Riccardo Mincigrucci,
Laura Foglia,
Dario De Angelis,
Jacopo-Stefano Pelli-Cresi,
Ettore Paltanin,
Danny Fainozzi,
Filippo Bencivenga,
Claudio Masciovecchio,
Dragan Mihailovic
Abstract:
The absence of efficient light modulators for extreme ultraviolet (EUV) and X-ray photons significantly limits their real-life application, particularly when even slight complexity of the beam patterns is required. Here we report on a novel approach to reversible imprinting of a holographic mask in an electronic Wigner crystal material with a sub-90 nm feature size. The structure is imprinted on a…
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The absence of efficient light modulators for extreme ultraviolet (EUV) and X-ray photons significantly limits their real-life application, particularly when even slight complexity of the beam patterns is required. Here we report on a novel approach to reversible imprinting of a holographic mask in an electronic Wigner crystal material with a sub-90 nm feature size. The structure is imprinted on a sub-picosecond time-scale using EUV laser pulses and acts as a high-efficiency diffraction grating that deflects EUV or soft X-ray light. The imprinted nanostructure is stable after the removal of the exciting beams at low temperatures but can be easily erased by a single heating beam. Modeling shows that the efficiency of the device can exceed 1%, approaching state-of-the-art etched gratings, but with the benefit of being programmable and tunable over a large range of wavelengths. The observed effect is based on the rapid change of lattice constant upon transition between metastable electronically-ordered phases in a layered transition metal dichalcogenide. The proposed approach is potentially useful for creating tunable light modulators in the EUV and soft X-ray spectral ranges.
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Submitted 15 November, 2023;
originally announced November 2023.
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Unconventional photo-induced charge-density-wave dynamics in 2H-NbSe$_{2}$
Authors:
Rok Venturini,
Ankita Sarkar,
Petra Sutar,
Zvonko Jagličić,
Yevhenii Vaskivskyi,
Evgeny Goreshnik,
Dragan Mihailovic,
Tomaz Mertelj
Abstract:
We investigated temperature ($T$) dependent ultrafast near-infrared (NIR) transient reflectivity dynamics in coexisting superconducting (SC) and charge density wave (CDW) phases of two-dimensional 2H-NbSe$_{2}$ using NIR and visible excitations. With visible pump-photon excitation (400 nm) we find a slow high-energy quasiparticle relaxation channel which is present in all phases. In the CDW phase,…
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We investigated temperature ($T$) dependent ultrafast near-infrared (NIR) transient reflectivity dynamics in coexisting superconducting (SC) and charge density wave (CDW) phases of two-dimensional 2H-NbSe$_{2}$ using NIR and visible excitations. With visible pump-photon excitation (400 nm) we find a slow high-energy quasiparticle relaxation channel which is present in all phases. In the CDW phase, we observe a distinctive transient response component, irrespective of the pump-photon energy. The component is marked by the absence of coherent amplitude mode oscillations and a relatively slow, picosecond rise time, which is different than in most of the typical CDW materials. In the SC phase, another tiny component emerges that is associated with optical suppression of the SC phase. The transient reflectivity relaxation in the CDW phase is dominated by phonon diffusive processes with an estimated low-$T$ heat diffusion constant anisotropy of $\sim30$. Strong excitation of the CDW phase reveals a weakly non-thermal CDW order parameter (OP) suppression. Unlike CDW systems with a larger gap, where the optical OP suppression involves only a small fraction of phonon degrees of freedom, the OP suppression in 2H-NbSe$_{2}$ is characterised by the excitation of a large amount of phonon degrees of freedom and significantly slower dynamics.
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Submitted 5 September, 2023;
originally announced September 2023.
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Ultra-Efficient Resistance Switching between Charge Ordered Phases in 1T-TaS$_2$ with a Single Picosecond Electrical Pulse
Authors:
Rok Venturini,
Anže Mraz,
Igor Vaskivskyi,
Yevhenii Vaskivskyi,
Damjan Svetin,
Tomaž Mertelj,
Leon Pavlovič,
Jing Cheng,
Genyu Chen,
Priyanthi Amarasinghe,
Syed B. Qadri,
Sudhir B. Trivedi,
Roman Sobolewski,
Dragan Mihailovic
Abstract:
Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of the 1T-TaS$_2$ has shown to be potentially useful for the development of high-speed, energy efficient non-volatile memory device. While ultrafast switching was p…
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Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of the 1T-TaS$_2$ has shown to be potentially useful for the development of high-speed, energy efficient non-volatile memory device. While ultrafast switching was previously reported with optical pulses, determination of the intrinsic speed limits of actual devices that are triggered by electrical pulses is technically challenging and hitherto still largely unexplored. A new optoelectronic laboratory-on-a-chip, designed for measurements of ultrafast memory switching, enables an accurate measurement of the electrical switching parameters with 100 fs temporal resolution. A photoconductive response is used for ultrashort electrical pulse generation, while its propagation along a coplanar transmission line is detected using electro-optical sampling using a purpose-grown highly-resistive electro-optic (Cd,Mn)Te crystal substrate. By combining the transmission line and the 1T-TaS$_2$ device in a single optoelectronic circuit a non-volatile resistance switching with a single 1.9 ps electrical pulse is demonstrated, with an extremely small switching energy density per unit area E$_A$ = 9.4 fJ/$μ$m$^2$. The experiments demonstrate ultrafast, energy-efficient circuits utilizing switching between non-volatile charge-ordered states offers a new technological platform for cryogenic memory devices.
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Submitted 29 June, 2022; v1 submitted 28 February, 2022;
originally announced February 2022.
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Energy efficient manipulation of topologically protected states in non-volatile ultrafast charge configuration memory devices
Authors:
Anze Mraz,
Rok Venturini,
Michele Diego,
Andrej Kranjec,
Damjan Svetin,
Yaroslav Gerasimenko,
Vitomir Sever,
Ian A. Mihailovic,
Jan Ravnik,
Igor Vaskivskyi,
Maria D'Antuono,
Daniela Stornaiulo,
Francesco Tafuri,
Dimitrios Kazazis,
Yasin Ekinci,
Dragan Mihailovic
Abstract:
Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of converting the information-carrying charge current into magnetization switching sets fundamental limitations in energy consumption. Other non-magnetic non-volatile…
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Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of converting the information-carrying charge current into magnetization switching sets fundamental limitations in energy consumption. Other non-magnetic non-volatile memories such as memristors, ferroelectric memory and phase change memory devices also rely on energetically relatively costly crystal structural rearrangements to store information. In contrast, conventional electronic charge states in quantum dots for example, can be switched in femtoseconds with high efficiency, but any stored information dissipates rapidly. Here we present a radically different approach in the form of a charge-configuration memory (CCM) device that relies on charge-injection-driven electronic crystal melting and topological protection of the resulting electronic domain configurations of a two-dimensional electronic crystal to store information. With multiprobe scanning tunneling microscopy (STM) we show microscopically, within an operational device, how dislocations in the domain ordering lead to metastability by a mechanism that is topologically equivalent to magnetic bubble memory. The devices have a very small switching energy (<2.2 fJ/bit), ultrafast switching speed of <11 ps and operational range over more than 3 orders of magnitude in temperature (<250 mK ~ 190 K). Together with their simple functionality, a large resistance switching ratio, straightforward fabrication and impressive endurance, CCM devices introduce a new memory paradigm in emerging cryo-computing and other high-performance computing applications that require ultrahigh speed and low energy consumption.
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Submitted 8 March, 2021;
originally announced March 2021.
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Configurational Electronic States in Layered Metallic Dichalcogenides
Authors:
Jaka Vodeb,
Viktor V. Kabanov,
Yaroslav A. Gerasimenko,
Rok Venturini,
Jan Ravnik,
Marion A. van Midden,
Erik Zupanič,
Petra Šutar,
Dragan Mihailovic
Abstract:
Mesoscopic irregularly ordered and even amorphous self-assembled electronic structures were recently reported in two-dimensional metallic dichalcogenides (TMDs), created and manipulated with short light pulses or by charge injection. Apart from promising new all-electronic memory devices, such states are of great fundamental importance, since such aperiodic states cannot be described in terms of c…
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Mesoscopic irregularly ordered and even amorphous self-assembled electronic structures were recently reported in two-dimensional metallic dichalcogenides (TMDs), created and manipulated with short light pulses or by charge injection. Apart from promising new all-electronic memory devices, such states are of great fundamental importance, since such aperiodic states cannot be described in terms of conventional charge-density-wave (CDW) physics. In this paper we address the problem of metastable mesoscopic configurational charge ordering in TMDs with a sparsely filled charged lattice gas model in which electrons are subject only to screened Coulomb repulsion. The model correctly predicts commensurate CDW states corresponding to different TMDs at magic filling fractions $f_m=1/3,1/4,1/9,1/13,1/16$. Doping away from $f_m$ results either in multiple near-degenerate configurational states, or an amorphous state at the correct density observed by scanning tunnelling microscopy. Quantum fluctuations between degenerate states predict a quantum charge liquid at low temperatures, revealing a new generalized viewpoint on both regular, irregular and amorphous charge ordering in transition metal dichalcogenides.
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Submitted 6 March, 2019; v1 submitted 8 January, 2019;
originally announced January 2019.
