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Superconductivity up to 14.2 K in MnB$_4$ under pressure
Authors:
Zhe-Ning Xiang,
Ying-Jie Zhang,
Qing Lu,
Qing Li,
Yiwen Li,
Tianheng Huang,
Yijie Zhu,
Yongze Ye,
Jian Sun,
Hai-Hu Wen
Abstract:
The discovery of superconductivity in 3$d$-transition metal compounds with strong magnetism is interesting but rare. Especially for Mn-based compounds, there exist only very limited materials that show superconductivity. Here, we report the discovery of superconductivity up to 14.2 K in a Mn-based material MnB$_4$. By applying high pressures, we found the continuous suppression of a weak insulatin…
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The discovery of superconductivity in 3$d$-transition metal compounds with strong magnetism is interesting but rare. Especially for Mn-based compounds, there exist only very limited materials that show superconductivity. Here, we report the discovery of superconductivity up to 14.2 K in a Mn-based material MnB$_4$. By applying high pressures, we found the continuous suppression of a weak insulating behavior and the occurrence of superconductivity after about 30 GPa. With further increasing pressure, $T_\text{c}$ is gradually enhanced and reaches the maximum value of about 14.2 K at 150 GPa with a Fermi-Liquid behavior in the normal states. The synchrotron X-ray diffraction data reveal the unchanged monoclinic (S.G: $P2_1/c$) symmetry but an unusual crossover of the lattice parameters $b$ and $c$. Theoretical calculations based on the electron-phonon coupling picture reveal a very low $T_\text{c}$ (less than 1 K), manifesting an exotic pairing mechanism beyond the Bardeen-Cooper-Schrieffer (BCS) theory. Our findings show a promising way to explore high $T_\text{c}$ superconductivity by combining the 3d-transition metal magnetic elements and light elements.
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Submitted 8 July, 2024;
originally announced July 2024.
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Visualization of Unconventional Rashba Band and Vortex Zero Mode in Topopogical Superconductor Candidate AuSn$_{4}$
Authors:
Yuhan Ye,
Rui Song,
Hongqin Xiao,
Guoyu Xian,
Hui Guo,
Haitao Yang,
Hui Chen,
Hong-Jun Gao
Abstract:
Topological superconductivity (TSC) is a promising platform to host Majorana zero mode (MZM) for topological quantum computing. Recently, the noble metal alloy AuSn$_{4}$ has been identified as an intrinsic surface TSC. However, the atomic visualization of its nontrivial surface states and MZM remains elusive. Here, we report the direct observation of unconventional surface states and vortex zero…
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Topological superconductivity (TSC) is a promising platform to host Majorana zero mode (MZM) for topological quantum computing. Recently, the noble metal alloy AuSn$_{4}$ has been identified as an intrinsic surface TSC. However, the atomic visualization of its nontrivial surface states and MZM remains elusive. Here, we report the direct observation of unconventional surface states and vortex zero mode at the gold (Au) terminated surfaces of AuSn$_{4}$, by ultra-low scanning tunneling microscope/spectroscopy. Distinct from the trivial metallic bulk states at tin (Sn) surfaces, the Au terminated surface exhibits pronounced surface states near Fermi level. Our density functional theory calculations indicate that these states arise from unconventional Rashba bands, where two Fermi circles from different bands share identical helical spin textures, chiralities, and group velocities in the same direction. Furthermore, we find that although the superconducting gap, critical temperature, anisotropic in-plane critical field are almost identical on Au and Sn terminated surfaces, the in-gap bound states inside Abrikosov vortex cores show significant differences. The vortex on Sn terminated surfaces exhibits a conventional Caroli-de Gennes-Matricon bound state while the Au surface shows a sharp zero-energy core state with a long non-splitting distance, resembling an MZM in a non-quantum-limit condition. This distinction may result from the dominant contribution of unconventional Rashba bands near Fermi energy from Au terminated surface. Our results provide a new platform for studying unconventional Rashba band and MZM in superconductors.
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Submitted 9 July, 2024; v1 submitted 8 July, 2024;
originally announced July 2024.
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Prolonged Phase Segregation of Mixed-Halide Perovskite Nanocrystals in the Dark
Authors:
Xueying Ma,
Yuhui Ye,
Yang Xiao,
Shengnan Feng,
Chunfeng Zhang,
Keyu Xia,
Fengrui Hu,
Min Xiao,
Xiaoyong Wang
Abstract:
A critical issue hindering the potential applications of semiconductor mixed-halide perovskites is the phase segregation effect, wherein localized regions enriched with one type of halide anions would be formed upon continuous photogeneration of the excited-state charge carriers. These unexpected phases are capable of remixing again in the dark under the entropic driving force, the process of whic…
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A critical issue hindering the potential applications of semiconductor mixed-halide perovskites is the phase segregation effect, wherein localized regions enriched with one type of halide anions would be formed upon continuous photogeneration of the excited-state charge carriers. These unexpected phases are capable of remixing again in the dark under the entropic driving force, the process of which are now being exclusively studied after mixed-halide perovskites have arrived at the final stage of complete phase segregation. Here we show that after the removal of laser excitation from a solid film of mixed-halide perovskite nanocrystals with partial phase segregation, the iodide- and bromide-rich regions can continuously grow in the dark for a prolonged time period of several minutes. We propose that this dark phase segregation is sustained by the local electric fields associated with the surface-trapped charge carriers, whose slow dissipation out of mixed-halide perovskite nanocrystals causes a delayed occurrence of the reversal phase remixing process.
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Submitted 6 July, 2024;
originally announced July 2024.
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Intrinsic localized excitons in MoSe$_2$/CrSBr heterostructures
Authors:
Xinyue Huang,
Zhigang Song,
Yuchen Gao,
Pingfan Gu,
Kenji Watanabe,
Takashi Taniguchi,
Shiqi Yang,
Zuxin Chen,
Yu Ye
Abstract:
We present a comprehensive investigation of optical properties in MoSe$_2$/CrSBr heterostructures, unveiling the presence of localized excitons represented by a new emission feature, X$^*$. We demonstrate through temperature- and power-dependent photoluminescence spectroscopy that X$^*$ originates from excitons confined by intrinsic defects within the CrSBr layer. The valley polarization of X$^*$…
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We present a comprehensive investigation of optical properties in MoSe$_2$/CrSBr heterostructures, unveiling the presence of localized excitons represented by a new emission feature, X$^*$. We demonstrate through temperature- and power-dependent photoluminescence spectroscopy that X$^*$ originates from excitons confined by intrinsic defects within the CrSBr layer. The valley polarization of X$^*$ and trion peaks displays opposite polarity under a magnetic field, which closely correlates with the magnetic order of CrSBr. This is attributed to spin-dependent charge transfer mechanisms across the heterointerface, supported by density functional theory calculations revealing a type-II band alignment and spin-polarized band structures. Furthermore, the strong in-plane anisotropy of CrSBr induces unique polarization-dependent responses in MoSe$_2$ emissions. Our study highlights the crucial role of defects in shaping excitonic properties. It offers valuable insights into spectral-resolved proximity effects in van der Waals heterostructures between semiconductor and magnet, contributing to advancing spintronic and valleytronic devices.
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Submitted 25 May, 2024;
originally announced May 2024.
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Defect-Assisted Domain Nucleation Drives Unique Exchange Bias Phenomena in $\bf{MnBi_2Te_4}$
Authors:
Shiqi Yang,
Xiaolong Xu,
Yuchen Gao,
Roger Guzman,
Pingfan Gu,
Huan Wang,
Yuan Huang,
Wu Zhou,
Tianlong Xia,
Yu Ye
Abstract:
The study of the mechanism of exchange bias phenomena and the achievement of its efficient control are of great importance, as it promotes the revelation of unique exchange interactions and the development of exotic applications. However, it is challenging due to the elusive interface between magnetic phases. In this study, we report an unprecedented exchange bias phenomenon observed in ultrathin…
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The study of the mechanism of exchange bias phenomena and the achievement of its efficient control are of great importance, as it promotes the revelation of unique exchange interactions and the development of exotic applications. However, it is challenging due to the elusive interface between magnetic phases. In this study, we report an unprecedented exchange bias phenomenon observed in ultrathin uncompensated antiferromagnetic MnBi$_2$Te$_4$. The magnitude and direction of the exchange field can be intentionally controlled by designing a magnetic field sweep protocol without a field cooling process. The combined experimental and theoretical simulation results indicate that the spin-flip process assisted by the ubiquitous defect-induced pinning domain sites with varying inner exchange interactions might give rise to the emergence and robustness of this peculiar exchange bias. The temperature and thickness dependence of the exchange bias phenomena are systematically investigated for further study and exploitation of its unique properties. This mechanism hold promise for highly tunable exchange bias in prevalent magnetic systems by engineering the properties of domain structures, and also offers promising avenues for the design of spintronic devices combing its topology based on MnBi$_2$Te$_4$.
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Submitted 3 May, 2024;
originally announced May 2024.
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Tuning the BCS-BEC crossover of electron-hole pairing with pressure
Authors:
Yuhao Ye,
Jinhua Wang,
Pan Nie,
Huakun Zuo,
Xiaokang Li,
Kamran Behnia,
Zengwei Zhu,
Benoît Fauqué
Abstract:
In graphite, a moderate magnetic field confines electrons and holes into their lowest Landau levels. In the extreme quantum limit, two insulating states with a dome-like field dependence of the their critical temperatures are induced by the magnetic field. Here, we study the evolution of the first dome (below 60 T) under hydrostatic pressure up to 1.7 GPa. With increasing pressure, the field-tempe…
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In graphite, a moderate magnetic field confines electrons and holes into their lowest Landau levels. In the extreme quantum limit, two insulating states with a dome-like field dependence of the their critical temperatures are induced by the magnetic field. Here, we study the evolution of the first dome (below 60 T) under hydrostatic pressure up to 1.7 GPa. With increasing pressure, the field-temperature phase boundary shifts towards higher magnetic fields, yet the maximum critical temperature remains unchanged. According to our fermiology data, pressure amplifies the density and the effective mass of hole-like and electron-like carriers. Thanks to this information, we verify the persistent relevance of the BCS relation between the critical temperature and the density of states in the weak-coupling boundary of the dome. In contrast, the strong-coupling summit of the dome does not show any detectable change with pressure. We argue that this is because the out-of-plane BCS coherence length approaches the interplane distance that shows little change with pressure. Thus, the BCS-BEC crossover is tunable by magnetic field and pressure, but with a locked summit.
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Submitted 29 April, 2024;
originally announced April 2024.
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Asymptotic, second-order homogenization of linear elastic beam networks
Authors:
Yang Ye,
Basile Audoly,
Claire Lestringant
Abstract:
We propose a general approach to the higher-order homogenization of discrete elastic networks made up of linear elastic beams or springs in dimension 2 or 3. The network may be nearly (rather than exactly) periodic: its elastic and geometric properties are allowed to vary slowly in space, in addition to being periodic at the scale of the unit cell. The reference configuration may be prestressed. A…
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We propose a general approach to the higher-order homogenization of discrete elastic networks made up of linear elastic beams or springs in dimension 2 or 3. The network may be nearly (rather than exactly) periodic: its elastic and geometric properties are allowed to vary slowly in space, in addition to being periodic at the scale of the unit cell. The reference configuration may be prestressed. A homogenized strain energy depending on both the macroscopic strain $\boldsymbol{\varepsilon}$ and its gradient $\nabla \boldsymbol{\varepsilon}$ is obtained by means of a two-scale expansion. The homogenized energy is asymptotically exact two orders beyond that obtained by classical homogenization. The homogenization method is implemented in a symbolic calculation language and applied to various types of networks, such as a 2D honeycomb, a 2D Kagome lattice, a 3D truss and a 1D pantograph. It is validated by comparing the predictions of the microscopic displacement to that obtained by full, discrete simulations. This second-order method remains highly accurate even when the strain gradient effects are significant, such as near the lips of a crack tip or in regions where a gradient of pre-strain is imposed.
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Submitted 17 April, 2024;
originally announced April 2024.
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Discovery of a distinct collective mode in kagome superconductors
Authors:
Bin Hu,
Hui Chen,
Yuhan Ye,
Zihao Huang,
Xianghe Han,
Zhen Zhao,
Hongqin Xiao,
Xiao Lin,
Haitao Yang,
Ziqiang Wang,
Hong-Jun Gao
Abstract:
The collective modes of the superconducting (SC) order parameter fluctuation can provide key insights into the nature of the superconductor, such as the pairing symmetry and orbital nature of the cooper pairs. Their detection has been challenging. Recently, a family of charge density wave (CDW) superconductors has emerged in non-magnetic kagome materials AV3Sb5 (A=K, Rb, Cs), exhibiting evidence f…
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The collective modes of the superconducting (SC) order parameter fluctuation can provide key insights into the nature of the superconductor, such as the pairing symmetry and orbital nature of the cooper pairs. Their detection has been challenging. Recently, a family of charge density wave (CDW) superconductors has emerged in non-magnetic kagome materials AV3Sb5 (A=K, Rb, Cs), exhibiting evidence for unprecedented time-reversal symmetry breaking CDW, roton-pair density wave (PDW), and higher-charge flux quantization. However, the collective behaviors of the cooper pairs have not been studied. Here, we report a distinct collective mode in the kagome superconductors CsV3-xTaxSb5. Using scanning tunneling microscope/spectroscopy (STM/S), we observe a "peak-dip-hump" feature in the tunneling conductance-a defining signature of collective excitations. The spectral lineshape is well-described by two SC gap functions, one isotropic and one anisotropic, and a bosonic mode due to electron-mode coupling. With increasing x, the two SC gaps, with different pair-breaking strengths and thus different orbital/band characters, move closer in energy, merge into two isotropic gaps of equal amplitude, and then increase synchronously. The collective mode energy, on the other hand, decreases monotonically to well below the quasi-particle excitation gap 2Δ and survives even after the CDW order is suppressed at large x. We identify the collective mode as the Leggett mode of the relative phases between different SC components in the multi-band superconductor or the exotic Bardasis-Schrieffer mode due to a subleading SC component. Our findings provide valuable insights on the nature of the SC ground state and collective excitations, their evolution with Ta-substitutions, and offer a new pathway to study the origin of superconductivity and its interplay with CDW order in kagome superconductors.
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Submitted 14 March, 2024;
originally announced March 2024.
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Noncentrosymmetric Nowotny Chimney Ladder Ferromagnet Cr4Ge7 with a High Curie Temperature of ~ 207 K
Authors:
Zhenhai Yu,
Kaijuan Zhou,
Xiaofei Hou,
Xuejiao Chen,
Zhen Tao,
Yunguan Ye,
Wei Xia,
Zhongyang Li,
Jinggeng Zhao,
Wei Wu,
Ziyi Liu,
Xia Wang,
Na Yu,
Jinguang Cheng,
Jianlin Luo,
Qiang Zhang,
Vladimir Pomjakushin,
Zhicheng Zhong,
Soh Jian Rui,
Xingye Lu,
Yanfeng Guo
Abstract:
Noncentrosymmetric magnets usually host intriguing magnetic interactions inherent the crystal structure with broken inversion symmetry, which can give rise to rich magnetic behaviors. We report herein the high-pressure synthesis, crystal structure, magnetizations and magnetic structure of a so-called Nowotny chimney ladder compound Cr4Ge7. Our analysis on the powder neutron diffraction data revise…
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Noncentrosymmetric magnets usually host intriguing magnetic interactions inherent the crystal structure with broken inversion symmetry, which can give rise to rich magnetic behaviors. We report herein the high-pressure synthesis, crystal structure, magnetizations and magnetic structure of a so-called Nowotny chimney ladder compound Cr4Ge7. Our analysis on the powder neutron diffraction data revises the crystal structure as a noncentrosymmetric space group (P-4c2, No.116). It exhibits two magnetic orders within the temperature range of 2 - 400 K. The first order at ~ 207 K associated with a small magnetic moment of ~ 0.75 miuB is assigned to a commensurate ferromagnetic structure with a propagation vector k = (0, 0, 0). The weak itinerant ferromagnet nature should be caused by the complex Cr spin orders from different Wyckoff positions. The second order at ~ 18 K is assumed to arise from a competition between the Dzyaloshinskii-Moria and Heisenberg interactions. The results provide an excellent platform for study on intricate interactions between various magnetic exchanges as well as for the exploration of high temperature exotic magnetic properties which host potential applications in next-generation spintronics.
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Submitted 3 March, 2024;
originally announced March 2024.
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Constructing the Fulde-Ferrell-Larkin-Ovchinnikov state in antiferromagnetic insulator CrOCl
Authors:
Yifan Ding,
Jiadian He,
Shihao Zhang,
Huakun Zuo,
Pingfan Gu,
Jiliang Cai,
Xiaohui Zeng,
Pu Yan,
Kecheng Cao,
Kenji Watanabe,
Takashi Taniguchi,
Peng Dong,
Yiwen Zhang,
Yueshen Wu,
Xiang Zhou,
Jinghui Wang,
Yulin Chen,
Yu Ye,
Jianpeng Liu,
Jun Li
Abstract:
Time reversal symmetry breaking in superconductors, resulting from external magnetic fields or spontaneous magnetization, often leads to unconventional superconducting properties. In this way, a conventional Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state, characterized by the Cooper pairs with nonzero total momentum, may be realized by the Zeeman effect caused from external magnetic fields. Here, w…
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Time reversal symmetry breaking in superconductors, resulting from external magnetic fields or spontaneous magnetization, often leads to unconventional superconducting properties. In this way, a conventional Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state, characterized by the Cooper pairs with nonzero total momentum, may be realized by the Zeeman effect caused from external magnetic fields. Here, we report the observation of superconductivity in a few-layer antiferromagnetic insulator CrOCl by utilizing superconducting proximity effect with NbSe2 flakes. The superconductivity demonstrates a considerably weak gap of about 0.12 meV and the in-plane upper critical field reveals as behavior of the FFLO state at low temperature. Our first-principles calculations indicate that the proximitized superconductivity may exist in the CrOCl layer with Cr vacancies or line-defects. Moreover, the FFLO state could be induced by the inherent larger spin splitting in the CrOCl layer. Our findings not only demonstrate the fascinating interaction between superconductivity and magnetism, but also provide a possible path to construct FFLO state by intrinsic time reversal symmetry breaking and superconducting proximity effect.
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Submitted 31 October, 2023;
originally announced November 2023.
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Multiband superconductivity and a deep gap minimum from the specific heat in KCa$_2$(Fe$_{1-x}$Ni$_x$)$_4$As$_4$F$_2$ ($x$ = 0, 0.05, 0.13)
Authors:
Yiwen Li,
Zhengyan Zhu,
Yongze Ye,
Wenshan Hong,
Yang Li,
Shiliang Li,
Huiqian Luo,
Hai-Hu Wen
Abstract:
Specific heat can explore low-energy quasiparticle excitations of superconductors, so it is a powerful tool for bulk measurement on the superconducting gap structure and pairing symmetry. Here, we report an in-depth investigation on the specific heat of the multiband superconductors KCa$_2$(Fe$_{1-x}$Ni$_x$)$_4$As$_4$F$_2$ ($x$ = 0, 0.05, 0.13) single crystals and the overdoped non-superconducting…
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Specific heat can explore low-energy quasiparticle excitations of superconductors, so it is a powerful tool for bulk measurement on the superconducting gap structure and pairing symmetry. Here, we report an in-depth investigation on the specific heat of the multiband superconductors KCa$_2$(Fe$_{1-x}$Ni$_x$)$_4$As$_4$F$_2$ ($x$ = 0, 0.05, 0.13) single crystals and the overdoped non-superconducting one with $x$ = 0.17. Clear specific heat anomalies can be observed at the superconducting transition temperature of 33.6 K and 28.8 K for the samples with $x$ = 0 and $x$ = 0.05, respectively. For the two samples, the magnetic field induced specific heat coefficient $Δγ(H)$ in the low-temperature limit increases rapidly below 2 T, then it rises slowly above 2 T. Using the non-superconducting sample with $x$ = 0.17 as a reference, the specific heat of phonon background for various superconducting samples can be obtained and subtracted, which allows us to extract the electronic specific heat of the superconducting samples. Through comparative analyses, it is found that the energy gap structure including two $s$-wave gaps and an extended $s$-wave gap with large anisotropy can reasonably describe the electronic specific heat data. According to these results, we suggest that at least one anisotropic superconducting gap with a deep gap minimum should exist in this multiband system. With the doping of Ni, the superconducting transition temperature of the sample decreases along with the decrease of the large $s$-wave gap, but the extended $s$-wave gap increases due to the enlarged electron pockets via adding more electrons. Despite these changes, the general properties of the gap structure remain unchanged versus doping Ni.
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Submitted 19 January, 2024; v1 submitted 29 October, 2023;
originally announced October 2023.
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High-field immiscibility of electrons belonging to adjacent twinned bismuth crystals
Authors:
Yuhao Ye,
Akiyoshi Yamada,
Yuto Kinoshita,
Jinhua Wang,
Pan Nie,
Liangcai Xu,
Huakun Zuo,
Masashi Tokunaga,
Neil Harrison,
Ross D. McDonald,
Alexey V. Suslov,
Arzhang Ardavan,
Moon-Sun Nam,
David LeBoeuf,
Cyril Proust,
Benoît Fauqué,
Yuki Fuseya,
Zengwei Zhu,
Kamran Behnia
Abstract:
Bulk bismuth has a complex Landau spectrum. The small effective masses and the large g-factors are anisotropic. The chemical potential drifts at high magnetic fields. Moreover, twin boundaries further complexify the interpretation of the data by producing extra anomalies in the extreme quantum limit. Here, we present a study of angle dependence of magnetoresistance up to 65 T in bismuth complement…
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Bulk bismuth has a complex Landau spectrum. The small effective masses and the large g-factors are anisotropic. The chemical potential drifts at high magnetic fields. Moreover, twin boundaries further complexify the interpretation of the data by producing extra anomalies in the extreme quantum limit. Here, we present a study of angle dependence of magnetoresistance up to 65 T in bismuth complemented with Nernst, ultrasound, and magneto-optic data. All observed anomalies can be explained in a single-particle picture of a sample consisting of two twinned crystals tilted by 108$^{\circ}$ and with two adjacent crystals keeping their own chemical potentials despite a shift between chemical potentials as large as 68 meV at 65 T. This implies an energy barrier between adjacent twinned crystals reminiscent of a metal-semiconductor Schottky barrier or a p-n junction. We argue that this barrier is built by accumulating charge carriers of opposite signs across a twin boundary.
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Submitted 15 February, 2024; v1 submitted 10 October, 2023;
originally announced October 2023.
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Unconventional superconductivity in Sc$_2$Ir$_{4-x}$Si$_x$ by spin-orbit coupling driven flat band
Authors:
Zhengyan Zhu,
Yuxiang Wu,
Shengtai Fan,
Yiliang Fan,
Yiwen Li,
Yongze Ye,
Xiyu Zhu,
Haijun Zhang,
Hai-Hu Wen
Abstract:
The kagome lattice is very attractive as it can host many novel quantum states, such as the charge density wave, superconductivity, quantum spin liquid, etc. Meanwhile, iridates often exhibit a strong spin-orbit coupling (SOC) effect due to the large atomic mass of 5$d$ elements, which has important implications for both the energy bands and the pairing symmetry of superconductors. For the Laves p…
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The kagome lattice is very attractive as it can host many novel quantum states, such as the charge density wave, superconductivity, quantum spin liquid, etc. Meanwhile, iridates often exhibit a strong spin-orbit coupling (SOC) effect due to the large atomic mass of 5$d$ elements, which has important implications for both the energy bands and the pairing symmetry of superconductors. For the Laves phase superconductor Sc$_2$Ir$_4$ with a kagome lattice, by doping Si to the Ir sites, we observed a nonmonotonic and two-dome like doping dependence of the superconducting transition temperature $T_{\rm c}$, which is typically found in many unconventional superconducting systems. Interestingly, for some samples, especially Sc$_2$Ir$_{3.5}$Si$_{0.5}$ with the optimal $T_{\rm c}$, after the suppression of superconductivity, the normal-state resistivity exhibits a semiconducting behavior; meanwhile, the specific heat coefficient shows an upturn which follows the relation $C/T\propto{\rm ln}(T_0/T)$ at low temperatures. Around the optimal doping, the resistance measurements exhibit strong superconducting fluctuations. And the superconductivity related specific heat can be fitted by the model of a $d$-wave gap after subtracting the normal-state background. These strongly suggest unconventional superconductivity and correlation effect in the samples, which is mainly induced by a flat band near the Fermi level when considering the SOC, as supported by the first-principles calculations. Our results reveal a new unconventional superconducting system Sc$_2$Ir$_{4-x}$Si$_x$ with strong correlation effects induced by the flat band in the kagome system with strong SOC.
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Submitted 5 October, 2023;
originally announced October 2023.
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Spin injection across a III-V/chiral perovskite interface enabling spin accumulation at room temperature
Authors:
Matthew P. Hautzinger,
Xin Pan,
Steven C. Hayden,
Jiselle Y. Ye,
Qi Jiang,
Mickey J. Wilson,
Yifan Dong,
Emily K. Raulerson,
Ian A. Leahy,
Chun-Sheng Jiang,
Joseph M. Luther,
Yuan Lu,
Katherine Jungjohann,
Z. Valy Vardeny,
Joseph J. Berry,
Kirstin Alberi,
Matthew C. Beard
Abstract:
Spin accumulation in semiconductor structures at room temperature and without magnetic fields is key to enable a broader range of opto-electronic functionality. Current efforts are limited due to inherent inefficiencies associated with spin injection into semiconductor structures. Here, we demonstrate spin injection across chiral halide perovskite/III-V interfaces achieving spin accumulation in a…
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Spin accumulation in semiconductor structures at room temperature and without magnetic fields is key to enable a broader range of opto-electronic functionality. Current efforts are limited due to inherent inefficiencies associated with spin injection into semiconductor structures. Here, we demonstrate spin injection across chiral halide perovskite/III-V interfaces achieving spin accumulation in a standard semiconductor III-V (AlxGa1-x)0.5In0.5P multiple quantum well (MQW) light emitting diode (LED). The spin accumulation in the MQW is detected via emission of circularly polarized light with a degree of polarization of up to ~15%. The chiral perovskite/III-V interface was characterized with X-ray photoemission spectroscopy (XPS), cross sectional scanning Kelvin probe force microscopy, and cross section transmission electron microscopy (TEM) imaging, showing a clean semiconductor/semiconductor interface where the fermi-level can equilibrate. These findings demonstrate chiral perovskite semiconductors can transform well-developed semiconductor platforms to ones that can also control spin.
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Submitted 14 November, 2023; v1 submitted 8 September, 2023;
originally announced September 2023.
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Controlling the 2D magnetism of CrBr$_3$ by van der Waals stacking engineering
Authors:
Shiqi Yang,
Xiaolong Xu,
Bo Han,
Pingfan Gu,
Roger Guzman,
Yiwen Song,
Zhongchong Lin,
Peng Gao,
Wu Zhou,
Jinbo Yang,
Zuxin Chen,
Yu Ye
Abstract:
The manipulation of two-dimensional (2D) magnetic order is of significant importance to facilitate future 2D magnets for low-power and high-speed spintronic devices. Van der Waals stacking engineering makes promises for controllable magnetism via interlayer magnetic coupling. However, directly examining the stacking order changes accompanying magnetic order transitions at the atomic scale and prep…
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The manipulation of two-dimensional (2D) magnetic order is of significant importance to facilitate future 2D magnets for low-power and high-speed spintronic devices. Van der Waals stacking engineering makes promises for controllable magnetism via interlayer magnetic coupling. However, directly examining the stacking order changes accompanying magnetic order transitions at the atomic scale and preparing device-ready 2D magnets with controllable magnetic orders remain elusive. Here, we demonstrate effective control of interlayer stacking in exfoliated CrBr$_3$ via thermally assisted strain engineering. The stable interlayer ferromagnetic (FM), antiferromagnetic (AFM), and FM-AFM coexistent ground states confirmed by the magnetic circular dichroism measurements are realized. Combined with the first-principles calculations, the atomically-resolved imaging technique reveals the correlation between magnetic order and interlay stacking order in the CrBr$_3$ flakes unambiguously. A tunable exchange bias effect is obtained in the mixed phase of FM and AFM states. This work will introduce new magnetic properties by controlling the stacking order, and sequence of 2D magnets, providing ample opportunities for their application in spintronic devices.
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Submitted 22 August, 2023;
originally announced August 2023.
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Pattern formation and bifurcation analysis of delay induced fractional-order epidemic spreading on networks
Authors:
Jiaying Zhou,
Yong Ye,
Alex Arenas,
Sergio Gómez,
Yi Zhao
Abstract:
The spontaneous emergence of ordered structures, known as Turing patterns, in complex networks is a phenomenon that holds potential applications across diverse scientific fields, including biology, chemistry, and physics. Here, we present a novel delayed fractional-order susceptible-infected-recovered-susceptible (SIRS) reaction-diffusion model functioning on a network, which is typically used to…
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The spontaneous emergence of ordered structures, known as Turing patterns, in complex networks is a phenomenon that holds potential applications across diverse scientific fields, including biology, chemistry, and physics. Here, we present a novel delayed fractional-order susceptible-infected-recovered-susceptible (SIRS) reaction-diffusion model functioning on a network, which is typically used to simulate disease transmission but can also model rumor propagation in social contexts. Our theoretical analysis establishes the Turing instability resulting from delay, and we support our conclusions through numerical experiments. We identify the unique impacts of delay, average network degree, and diffusion rate on pattern formation. The primary outcomes of our study are: (i) Delays cause system instability, mainly evidenced by periodic temporal fluctuations; (ii) The average network degree produces periodic oscillatory states in uneven spatial distributions; (iii) The combined influence of diffusion rate and delay results in irregular oscillations in both time and space. However, we also find that fractional-order can suppress the formation of spatiotemporal patterns. These findings are crucial for comprehending the impact of network structure on the dynamics of fractional-order systems.
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Submitted 5 July, 2023;
originally announced July 2023.
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Probing the Anomalous Hall Transport and Magnetic Reversal of Chiral-Lattice Antiferromagnet Co$_{1/3}$NbS$_2$
Authors:
Pingfan Gu,
Yuxuan Peng,
Shiqi Yang,
Huan Wang,
Shenyong Ye,
Hanwen Wang,
Yanping Li,
Tianlong Xia,
Jinbo Yang,
Yu Ye
Abstract:
Antiferromagnets exhibiting giant anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) have recently aroused broad interest, not only for their potential applications in future electronic devices, but also because of the rich physics arising from the Berry curvature near the Fermi level. $\rm{Co_{1/3}NbS_2}$, by intercalating $\rm{Co^{2+}}$ ions between $\rm{NbS_2}$ layers, is a quasi-two…
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Antiferromagnets exhibiting giant anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) have recently aroused broad interest, not only for their potential applications in future electronic devices, but also because of the rich physics arising from the Berry curvature near the Fermi level. $\rm{Co_{1/3}NbS_2}$, by intercalating $\rm{Co^{2+}}$ ions between $\rm{NbS_2}$ layers, is a quasi-two-dimensional layered antiferromagnet with a chiral lattice. A large AHE has been observed in $\rm{Co_{1/3}NbS_2}$, but its origin is under debate. In this letter, we report the large AHE and ANE in exfoliated $\rm{Co_{1/3}NbS_2}$ flakes. By analyzing the thermoelectric data via the Mott relation, we determined that the observed large AHE and ANE primarily result from the intrinsic Berry curvature. We also observed the magnetic domains in $\rm{Co_{1/3}NbS_2}$ by reflective magnetic circular dichroism measurements. Combined with electrical transport measurements, we confirmed that the magnetic reversal in $\rm{Co_{1/3}NbS_2}$ is determined by domain wall motion, and the critical field ($H_c$) exhibits a memory effect of consecutive magnetic sweeps. Our work provides insight into the topological properties of $\rm{Co_{1/3}NbS_2}$ and paves the way to studying the spin configuration and magnetic domain dynamics in this fascinating antiferromagnet.
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Submitted 16 June, 2023;
originally announced June 2023.
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Atomically-precise engineering of spin-orbit polarons in a kagome magnetic Weyl semimetal
Authors:
Hui Chen,
Yuqing Xing,
Hengxin Tan,
Li Huang,
Qi Zheng,
Zihao Huang,
Xianghe Han,
Bin Hu,
Yuhan Ye,
Yan Li,
Yao Xiao,
Hechang Lei,
Xianggang Qiu,
Enke Liu,
Haitao Yang,
Ziqiang Wang,
Binghai Yan,
Hong-Jun Gao
Abstract:
Atomically-precise engineering of defects in topological quantum materials, which is essential for constructing new artificial quantum materials with exotic properties and appealing for practical quantum applications, remains challenging due to the hindrances in modifying complex lattice with atomic precision. Here, we report the atomically-precise engineering of the vacancy-localized spin-orbital…
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Atomically-precise engineering of defects in topological quantum materials, which is essential for constructing new artificial quantum materials with exotic properties and appealing for practical quantum applications, remains challenging due to the hindrances in modifying complex lattice with atomic precision. Here, we report the atomically-precise engineering of the vacancy-localized spin-orbital polarons (SOP) in a kagome magnetic Weyl semimetal Co3Sn2S2, using scanning tunneling microscope. We achieve the step-by-step repairing of the selected vacancies, which results in the formation of artificial sulfur vacancy with elaborate geometry. We find that that the bound states localized around the vacancies experience a symmetry-dependent energy shift towards Fermi level with increasing vacancy size. Strikingly, as vacancy size increases, the localized magnetic moments of SOPs are tunable and ultimately extended to the negative magnetic moments resulting from spin-orbit coupling in the kagome flat band. These findings establish a new platform for engineering atomic quantum states in topological quantum materials, offering potential for kagome-lattice-based spintronics and quantum technologies.
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Submitted 3 October, 2023; v1 submitted 1 May, 2023;
originally announced May 2023.
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Kekulé Moiré Superlattices
Authors:
Yusen Ye,
Jimin Qian,
Xiao-Wei Zhang,
Chong Wang,
Di Xiao,
Ting Cao
Abstract:
Moiré superlattices from stacks of van der Waals materials offer an exciting arena in the fields of condensed matter physics and materials science. Typically, these moiré superlattices consist of materials with identical or similar structures, and the long moiré period arises from a small twist angle or lattice mismatch. In this article, we discuss that long moiré period appears in a new moiré sys…
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Moiré superlattices from stacks of van der Waals materials offer an exciting arena in the fields of condensed matter physics and materials science. Typically, these moiré superlattices consist of materials with identical or similar structures, and the long moiré period arises from a small twist angle or lattice mismatch. In this article, we discuss that long moiré period appears in a new moiré system by stacking two dissimilar van der Waals layers with large lattice mismatch, resulting in couplings between moiré bands from remote valleys in the momentum space. In this system, the first layer is reconstructed using a $\sqrt{3}$ by $\sqrt{3}$ supercell that resembles the Kekulé distortion in graphene, and such reconstruction becomes nearly commensurate with the second layer. This Kekulé moiré superlattice is realized in heterostructures of transition metal dichalcogenides and metal phosphorus trichalcogenides such as MoTe$_2$/MnPSe$_3$. By first-principles calculations, we demonstrate that the antiferromagnetic MnPSe$_3$ strongly couples the otherwise degenerate Kramers' valleys of MoTe$_2$, resulting in valley pseudospin textures that depend on Néel vector direction, stacking geometry, and external fields. With one hole per moiré supercell, we predict that the system can become a Chern insulator, of which the topology is tunable by external fields.
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Submitted 14 March, 2023;
originally announced March 2023.
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Metal-bonded Atomic Layers of Transition Metal Carbides (MXenes)
Authors:
Zongju Cheng,
Zhiguo Du,
Hao Chen,
Qi Zhao,
Yu Shi,
Haiyang Wang,
Yuxuan Ye,
Shubin Yang
Abstract:
Although two-dimensional transition metal carbides and nitrides (MXenes) have fantastic physical and chemical properties as well as wide applications, it remains challenging to produce stable MXenes due to their rapid structural degradation. Here, unique metal-bonded atomic layers of transition metal carbides with high stabilities are produced via a simple topological reaction between chlorine-ter…
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Although two-dimensional transition metal carbides and nitrides (MXenes) have fantastic physical and chemical properties as well as wide applications, it remains challenging to produce stable MXenes due to their rapid structural degradation. Here, unique metal-bonded atomic layers of transition metal carbides with high stabilities are produced via a simple topological reaction between chlorine-terminated MXenes and selected metals, where the metals enable to not only remove Cl terminations, but also efficiently bond with adjacent atomic MXene slabs, driven by the symmetry of MAX phases. The films constructed from Al-bonded Ti$_3$C$_2$Cl$_x$ atomic layers show high oxidation resistance up to 400 degrees centigrade and low sheet resistance of 9.3 ohm per square. Coupled to the multi-layer structure, the Al-bonded Ti$_3$C$_2$Cl$_x$ film displays a significantly improved EMI shielding capability with a total shielding effectiveness value of 39 dB at a low thickness of 3.1 micron, outperforming pure Ti$_3$C$_2$Cl$_x$ film.
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Submitted 15 February, 2023;
originally announced February 2023.
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Magnetically-dressed CrSBr exciton-polaritons in ultrastrong coupling regime
Authors:
Tingting Wang,
Dingyang Zhang,
Shiqi Yang,
Zhongchong Lin,
Quan Chen,
Jinbo Yang,
Qihuang Gong,
Zuxin Chen,
Yu Ye,
Wenjing Liu
Abstract:
The strong coupling between photons and matter excitations such as excitons, phonons, and magnons is of central importance in the study of light-matter interactions. Bridging the flying and stationary quantum states, the strong light-matter coupling enables the coherent transmission, storage, and processing of quantum information, which is essential for building photonic quantum networks. Over the…
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The strong coupling between photons and matter excitations such as excitons, phonons, and magnons is of central importance in the study of light-matter interactions. Bridging the flying and stationary quantum states, the strong light-matter coupling enables the coherent transmission, storage, and processing of quantum information, which is essential for building photonic quantum networks. Over the past few decades, exciton-polaritons have attracted substantial research interest due to their half-light-half-matter bosonic nature. Coupling exciton-polaritons with magnetic orders grants access to rich many-body phenomena, but has been limited by the availability of material systems that exhibit simultaneous exciton resonances and magnetic ordering. Here we report magnetically-dressed microcavity exciton-polaritons in the van der Waals antiferromagnetic (AFM) semiconductor CrSBr coupled to a Tamm plasmon microcavity. Angle-resolved spectroscopy reveals an exceptionally high exciton-polariton coupling strength attaining 169 meV, demonstrating ultrastrong coupling that persists up to room temperature. Temperature-dependent exciton-polariton spectroscopy senses the magnetic order change from AFM to paramagnetism in CrSBr, confirming its magnetic nature. By applying an out-of-plane magnetic field, an effective tuning of the polariton energy is further achieved while maintaining the ultrastrong exciton-photon coupling strength, which is attributed to the spin canting process that modulates the interlayer exciton interaction. Our work proposes a hybrid quantum platform enabled by robust opto-electronic-magnetic coupling, promising for quantum interconnects and transducers.
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Submitted 15 February, 2023;
originally announced February 2023.
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Observation of Flat Band, Dirac Nodal Lines and Topological Surface States in Kagome Superconductor CsTi$_3$Bi$_5$
Authors:
Jiangang Yang,
Yuyang Xie,
Zhen Zhao,
Xinwei Yi,
Taimin Miao,
Hailan Luo,
Hao Chen,
Bo Liang,
Wenpei Zhu,
Yuhan Ye,
Jing-Yang You,
Bo Gu,
Shenjin Zhang,
Fengfeng Zhang,
Feng Yang,
Zhimin Wang,
Qinjun Peng,
Hanqing Mao,
Guodong Liu,
Zuyan Xu,
Hui Chen,
Haitao Yang,
Gang Su,
Hongjun Gao,
Lin Zhao
, et al. (1 additional authors not shown)
Abstract:
A kagome lattice of 3d transition metals hosts flat bands, Dirac fermions and saddle points. It provides a versatile platform for achieving topological superconductivity, anomalous Hall effect, unconventional density wave order and quantum spin liquid when the strong correlation, spin-orbit coupling or magnetic order are involved in such a lattice. Here, using laser-based angle-resolved photoemiss…
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A kagome lattice of 3d transition metals hosts flat bands, Dirac fermions and saddle points. It provides a versatile platform for achieving topological superconductivity, anomalous Hall effect, unconventional density wave order and quantum spin liquid when the strong correlation, spin-orbit coupling or magnetic order are involved in such a lattice. Here, using laser-based angle-resolved photoemission spectroscopy in combination with density functional theory calculations, we investigate the electronic structure of the newly discovered kagome superconductor CsTi$_3$Bi$_5$, which is isostructural to the AV$_3$Sb$_5$ (A=K, Rb or Cs) kagome superconductors and possesses a perfect two-dimensional kagome network of Titanium. We directly observed a strikingly flat band derived from the local destructive interferences of Bloch wave functions within the kagome lattices. We also identify the type-II Dirac nodal loops around the Brillouin zone center, the type-III Dirac nodal loops around the zone corners and type-III Dirac nodal lines along the k$_z$ direction. In addition, around the Brillouin zone center, Z2 nontrivial topological surface states are also observed which is formed from the band inversion due to strong spin orbital coupling. The simultaneous existence of such multi-sets of nontrivial band structures in one kagome superconductor not only provides good opportunities to study related physics in the kagome lattice but also makes CsTi$_3$Bi$_5$ an ideal system to realize noval quantum phenomena by manipulating its chemical potential with chemical doping or pressure.
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Submitted 8 December, 2022;
originally announced December 2022.
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Superconductivity and orbital-selective nematic order in a new titanium-based kagome metal CsTi3Bi5
Authors:
Haitao Yang,
Yuhan Ye,
Zhen Zhao,
Jiali Liu,
Xin-Wei Yi,
Yuhang Zhang,
Jinan Shi,
Jing-Yang You,
Zihao Huang,
Bingjie Wang,
Jing Wang,
Hui Guo,
Xiao Lin,
Chengmin Shen,
Wu Zhou,
Hui Chen,
Xiaoli Dong,
Gang Su,
Ziqiang Wang,
Hong-Jun Gao
Abstract:
Fabrication of new types of superconductors with novel physical properties has always been a major thread in the research of superconducting materials. An example is the enormous interests generated by the cascade of correlated topological quantum states in the newly discovered vanadium-based kagome superconductors AV3Sb5 (A=K, Rb, and Cs) with a Z2 topological band structure. Here we report the s…
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Fabrication of new types of superconductors with novel physical properties has always been a major thread in the research of superconducting materials. An example is the enormous interests generated by the cascade of correlated topological quantum states in the newly discovered vanadium-based kagome superconductors AV3Sb5 (A=K, Rb, and Cs) with a Z2 topological band structure. Here we report the successful fabrication of single-crystals of titanium-based kagome metal CsTi3Bi5 and the observation of superconductivity and electronic nematicity. The onset of the superconducting transition temperature Tc is around 4.8 K. In sharp contrast to the charge density wave superconductor AV3Sb5, we find that the kagome superconductor CsTi3Bi5 preserves translation symmetry, but breaks rotational symmetry and exhibits an electronic nematicity. The angular-dependent magnetoresistivity shows a remarkable two-fold rotational symmetry as the magnetic field rotates in the kagome plane. The scanning tunneling microscopy and spectroscopic imaging detect rotational-symmetry breaking C2 quasiparticle interference patterns (QPI) at low energies, providing further microscopic evidence for electronic nematicity. Combined with first-principle calculations, we find that the nematic QPI is orbital-selective and dominated by the Ti dxz and dyz orbitals, possibly originating from the intriguing orbital bond nematic order. Our findings in the new "135" material CsTi3Bi5 provide new directions for exploring the multi-orbital correlation effect and the role of orbital or bond order in the electron liquid crystal phases evidenced by the symmetry breaking states in kagome superconductors.
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Submitted 22 November, 2022;
originally announced November 2022.
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Random walks on complex networks under time-dependent stochastic resetting
Authors:
Hanshuang Chen,
Yanfei Ye
Abstract:
We study discrete-time random walks on networks subject to a time-dependent stochastic resetting, where the walker either hops randomly between neighboring nodes with a probability $1-φ(a)$, or is reset to a given node with a complementary probability $φ(a)$. The resetting probability $φ(a)$ depends on the time $a$ since the last reset event (also called $a$ the age of the walker). Using the renew…
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We study discrete-time random walks on networks subject to a time-dependent stochastic resetting, where the walker either hops randomly between neighboring nodes with a probability $1-φ(a)$, or is reset to a given node with a complementary probability $φ(a)$. The resetting probability $φ(a)$ depends on the time $a$ since the last reset event (also called $a$ the age of the walker). Using the renewal approach and spectral decomposition of transition matrix, we formulize the stationary occupation probability of the walker at each node and the mean first passage time between arbitrary two nodes. Concretely, we consider that two different time-dependent resetting protocols that are both exactly solvable. One is that $φ(a)$ is a step-shaped function of $a$ and the other one is that $φ(a)$ is a rational function of $a$. We demonstrate the theoretical results on two different networks, also validated by numerical simulations, and find that the time-modulated resetting protocols can be more advantageous than the constant-probability resetting in accelerating the completion of a target search process.
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Submitted 12 August, 2022;
originally announced August 2022.
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Orbital polarization and third-order anomalous Hall effect in WTe2
Authors:
Xing-Guo Ye,
Peng-Fei Zhu,
Wen-Zheng Xu,
Zhihao Zang,
Yu Ye,
Zhi-Min Liao
Abstract:
The anomalous Hall effect (AHE) has been extended into the nonlinear regime, where the Hall voltage shows higher-order response to the applied current. Nevertheless, the microscopic mechanism of the nonlinear AHE remains unclear. Here we report the orbital polarization and its induced third-order AHE in few-layer WTe2 flakes. Through angle-dependent electric measurements, it is found that the thir…
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The anomalous Hall effect (AHE) has been extended into the nonlinear regime, where the Hall voltage shows higher-order response to the applied current. Nevertheless, the microscopic mechanism of the nonlinear AHE remains unclear. Here we report the orbital polarization and its induced third-order AHE in few-layer WTe2 flakes. Through angle-dependent electric measurements, it is found that the third-order AHE is quite consistent with the electric field induced polarization of orbital magnetic moment caused by the Berry connection polarizability tensor, which is further directly detected by polar reflective magnetic circular dichroism spectroscopy. The microscopic mechanisms of third-order AHE are analyzed through the scaling law, that is, the opposite orbital magnetic moments (up or down) deflect to opposite directions driven by electric field induced Berry curvature, forming the intrinsic contribution; driven by the Magnus effect of the self-rotating Bloch electrons, the opposite orbital magnetic moments are scattered towards opposite transverse directions, resulting in the skew scattering.
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Submitted 16 July, 2022;
originally announced July 2022.
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Multi-state data storage in a two-dimensional stripy antiferromagnet implemented by magnetoelectric effect
Authors:
Pingfan Gu,
Cong Wang,
Dan Su,
Zehao Dong,
Qiuyuan Wang,
Zheng Han,
Kenji Watanabe,
Takashi Taniguchi,
Wei Ji,
Young Sun,
Yu Ye
Abstract:
A promising approach to the next generation of low-power, functional, and energy-efficient electronics relies on novel materials with coupled magnetic and electric degrees of freedom. In particular, stripy antiferromagnets often exhibit broken crystal and magnetic symmetries, which may bring about the magnetoelectric (ME) effect and enable the manipulation of intriguing properties and functionalit…
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A promising approach to the next generation of low-power, functional, and energy-efficient electronics relies on novel materials with coupled magnetic and electric degrees of freedom. In particular, stripy antiferromagnets often exhibit broken crystal and magnetic symmetries, which may bring about the magnetoelectric (ME) effect and enable the manipulation of intriguing properties and functionalities by electrical means. The demand for expanding the boundaries of data storage and processing technologies has led to the development of spintronics toward two-dimensional (2D) platforms. This work reports the ME effect in the 2D stripy antiferromagnetic insulator CrOCl down to a single layer. By measuring the tunneling resistance of CrOCl on the parameter space of temperature, magnetic field, and applied voltage, we verified the ME coupling down to the 2D limit and unraveled its mechanism. Utilizing the multi-stable states and ME coupling at magnetic phase transitions, we realize multi-state data storage in the tunneling devices. Our work not only advances the fundamental understanding of spin-charge coupling but also demonstrates the great potential of 2D antiferromagnetic materials to deliver devices and circuits beyond the traditional binary operations.
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Submitted 13 July, 2022;
originally announced July 2022.
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Synergistic correlated states and nontrivial topology in coupled graphene-insulator heterostructures
Authors:
Xin Lu,
Shihao Zhang,
Yaning Wang,
Xiang Gao,
Kaining Yang,
Zhongqing Guo,
Yuchen Gao,
Yu Ye,
Zheng Vitto Han,
Jianpeng Liu
Abstract:
In this work, we study the synergistic correlated states in two distinct types of interacting electronic systems coupled by interlayer Coulomb interactions. We propose that this scenario can be realized in a type of Coulomb-coupled graphene-insulator heterostructures with gate tunable band alignment. We find that, by virtue of the interlayer Coulomb coupling between the interacting electrons in th…
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In this work, we study the synergistic correlated states in two distinct types of interacting electronic systems coupled by interlayer Coulomb interactions. We propose that this scenario can be realized in a type of Coulomb-coupled graphene-insulator heterostructures with gate tunable band alignment. We find that, by virtue of the interlayer Coulomb coupling between the interacting electrons in the two layers, electronic states that cannot be revealed in either individual layer would emerge in a cooperative and synergistic manner. Specifically, as a result of the band alignment, charge carriers can be transferred between graphene and the substrate under the control of gate voltages, which can yield a long-wavelength electronic crystal at the surface of the substrate. This electronic crystal exerts a superlattice Coulomb potential on the Dirac electrons in graphene, which generates subbands with reduced non-interacting Fermi velocity. As a result, $e$-$e$ Coulomb interactions within graphene would play a more important role, giving rise to a gapped Dirac state at the charge neutrality point, accompanied by interaction-enhanced Fermi velocity. Moreover, the superlattice potential can give rise to topologically nontrivial subband structures which are tunable by superlattice's constant and anisotropy. Reciprocally, the electronic crystal formed in the substrate can be substantially stabilized in such coupled bilayer heterostructure by virtue of the cooperative interlayer Coulomb coupling. We further perform high-throughput first principles calculations to identify a number of promising insulating materials as candidate substrates for graphene to demonstrate these effects.
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Submitted 4 August, 2023; v1 submitted 12 June, 2022;
originally announced June 2022.
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Doping-induced structural transformation in the spin-1/2 triangular-lattice antiferromagnet Na$_{2}$Ba$_{1-x}$Sr$_{x}$Co(PO$_{4}$)$_{2}$
Authors:
Chuandi Zhang,
Qianhui Xu,
Xu-Tao Zeng,
Chao Lyu,
Zhengwang Lin,
Jiazheng Hao,
Sihao Deng,
Lunhua He,
Yinguo Xiao,
Yu Ye,
Ziyu Chen,
Xian-Lei Sheng,
Wentao Jin
Abstract:
The effects of Sr doping on the structural properties of Na$_{2}$BaCo(PO$_{4}$)$_{2}$, a spin-1/2 triangular-lattice antiferromagnet as a quantum spin liquid candidate, are investigated by complementary x-ray and neutron powder diffraction measurements. It is found that in Na$_{2}$Ba$_{1-x}$Sr$_{x}$Co(PO$_{4}$)$_{2}$ (NBSCPO), the trigonal phase (space group $\mathit{P}$$\bar{3}$$\mathit{m}$1) wit…
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The effects of Sr doping on the structural properties of Na$_{2}$BaCo(PO$_{4}$)$_{2}$, a spin-1/2 triangular-lattice antiferromagnet as a quantum spin liquid candidate, are investigated by complementary x-ray and neutron powder diffraction measurements. It is found that in Na$_{2}$Ba$_{1-x}$Sr$_{x}$Co(PO$_{4}$)$_{2}$ (NBSCPO), the trigonal phase (space group $\mathit{P}$$\bar{3}$$\mathit{m}$1) with a perfect triangular lattice of Co$^{2+}$ ions is structurally stable when the doping level of Sr is below 30% ($\mathit{x}$ $\le$ 0.3), while a pure monoclinic phase (space group $\mathit{P}$2$_{1}$/$\mathit{a}$) with slight rotations of CoO$_{6}$ octahedra and displacements of Ba$^{2+}$/Sr$^{2+}$ ions will be established when the Sr doping level is above 60% ($\mathit{x}$ $\ge$ 0.6). Such a doping-induced structural transformation in NBSCPO is supported by first-principles calculations and Raman spectroscopy. Na$_{2}$SrCo(PO$_{4}$)$_{2}$, a novel spin-1/2 triangular-lattice antiferromagnet with glaserite-type structure, although monoclinically distorted, exhibits no long-range magnetic order down to 2 K and a similar negative Curie-Weiss temperature as Na$_{2}$BaCo(PO$_{4}$)$_{2}$ with a perfect triangular lattice, suggesting the robustness of magnetic exchange interaction against the Ba/Sr substitutions.
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Submitted 17 May, 2022;
originally announced May 2022.
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Ferromagnetic-antiferromagnetic coexisting ground states and exchange bias effects in $\bf{MnBi_4Te_7}$ and $\bf{MnBi_6Te_{10}}$
Authors:
Xiaolong Xu,
Shiqi Yang,
Huan Wang,
Roger Guzman,
Yaozheng Zhu,
Yuxuan Peng,
Zhihao Zang,
Ming Xi,
Shangjie Tian,
Yanping Li,
Hechang Lei,
Zhaochu Luo,
Jinbo Yang,
Tianlong Xia,
Wu Zhou,
Yuan Huang,
Yu Ye
Abstract:
Natural superlattice structures $\rm{(MnBi_2Te_4)(Bi_2Te_3)}$$_n$ ($n$ = 1, 2,...), in which magnetic $\rm{MnBi_2Te_4}$ layers are separated by nonmagnetic $\rm{Bi_2Te_3}$ layers, hold band topology, magnetism and reduced interlayer coupling, providing a promising platform for the realization of exotic topological quantum states. However, their magnetism in the two-dimensional limit, which is cruc…
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Natural superlattice structures $\rm{(MnBi_2Te_4)(Bi_2Te_3)}$$_n$ ($n$ = 1, 2,...), in which magnetic $\rm{MnBi_2Te_4}$ layers are separated by nonmagnetic $\rm{Bi_2Te_3}$ layers, hold band topology, magnetism and reduced interlayer coupling, providing a promising platform for the realization of exotic topological quantum states. However, their magnetism in the two-dimensional limit, which is crucial for further exploration of quantum phenomena, remains elusive. Here, complex ferromagnetic (FM)-antiferromagnetic (AFM) coexisting ground states that persist up to the 2-septuple layers (SLs) limit are observed and comprehensively investigated in $\rm{MnBi_4Te_7}$ ($n$ = 1) and $\rm{MnBi_6Te_{10}}$ ($n$ = 2). The ubiquitous Mn-Bi site mixing modifies or even changes the sign of the subtle inter-SL magnetic interactions, yielding a spatially inhomogeneous interlayer coupling. Further, a tunable exchange bias effect is observed in $\rm{(MnBi_2Te_4)(Bi_2Te_3)}$$_n$ ($n$ = 1, 2), arising from the coupling between the FM and AFM components in the ground state. Our work highlights a new approach toward the fine-tuning of magnetism and paves the way for further study of quantum phenomena in $\rm{(MnBi_2Te_4)(Bi_2Te_3)}$$_n$ ($n$ = 1, 2,...) as well as their magnetic applications.
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Submitted 20 April, 2022;
originally announced April 2022.
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Electrically pumped polarized exciton-polaritons in a halide perovskite microcavity
Authors:
Tingting Wang,
Zhihao Zang,
Yuchen Gao,
Chao Lyu,
Kai Peng,
Kenji Watanabe,
Takashi Taniguchi,
Xiaoze Liu,
Wei Bao,
Yu Ye
Abstract:
Exciton polaritons, hybrid quasiparticles with part-light part-matter nature in semiconductor microcavities, are extensively investigated for striking phenomena such as polariton condensation and quantum emulation. These phenomena have recently been discovered in emerging lead halide perovskites at elevated temperatures up to room temperature. For advancing these discoveries into practical applica…
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Exciton polaritons, hybrid quasiparticles with part-light part-matter nature in semiconductor microcavities, are extensively investigated for striking phenomena such as polariton condensation and quantum emulation. These phenomena have recently been discovered in emerging lead halide perovskites at elevated temperatures up to room temperature. For advancing these discoveries into practical applications, one critical requirement is the realization of electrically pumped exciton-polaritons. However, electrically pumped polariton light-emitting devices with perovskites have not yet been achieved experimentally. Here, we devise a new method to combine the device with the microcavity and report the first halide perovskite polariton light-emitting device. Specifically, the device is based on a CsPbBr3 capacitive structure, which can inject the electrons and holes from the same electrode, conducive to the formation of excitons and simultaneously maintaining the high quality of the microcavity. In addition, highly polarization-selective polariton emissions have been demonstrated due to the optical birefringence in the CsPbBr3 microplate. This work paves the way for realizing practical polaritonic devices such as high-speed light-emitting devices for information communications and inversionless electrically pumped lasers based on perovskites.
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Submitted 2 March, 2022;
originally announced March 2022.
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Random walks on complex networks under node-dependent stochastic resetting
Authors:
Yanfei Ye,
Hanshuang Chen
Abstract:
In the present work, we study random walks on complex networks subject to stochastic resetting when the resetting probability is node-dependent. Using a renewal approach, we derive the exact expressions of the stationary occupation probabilities of the walker on each node and the mean first passage time between arbitrary two nodes. Finally, we demonstrate our theoretical results on three networks…
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In the present work, we study random walks on complex networks subject to stochastic resetting when the resetting probability is node-dependent. Using a renewal approach, we derive the exact expressions of the stationary occupation probabilities of the walker on each node and the mean first passage time between arbitrary two nodes. Finally, we demonstrate our theoretical results on three networks with two different resetting protocols, validated by numerical simulations as well. We find that under a delicate setting it is advantageous to optimize the efficiency of a global search on such networks by the node-dependent resetting probability.
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Submitted 4 May, 2022; v1 submitted 28 January, 2022;
originally announced January 2022.
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Eliminating the Perovskite Solar Cell Manufacturing Bottleneck via High-Speed Flexography
Authors:
Julia E. Huddy,
Youxiong Ye,
William J. Scheideler
Abstract:
Perovskite solar cells have potential to deliver terawatt-scale power via low-cost manufacturing. However, scaling is limited by slow, high-temperature annealing of the inorganic transport layers and the lack of reliable, large-area methods for depositing thin (< 30 nm) charge transport layers (CTLs). We present a method for scaling ultrathin NiOx hole transport layers (HTLs) by pairing high-speed…
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Perovskite solar cells have potential to deliver terawatt-scale power via low-cost manufacturing. However, scaling is limited by slow, high-temperature annealing of the inorganic transport layers and the lack of reliable, large-area methods for depositing thin (< 30 nm) charge transport layers (CTLs). We present a method for scaling ultrathin NiOx hole transport layers (HTLs) by pairing high-speed (60 m/min) flexographic printing with rapidly annealed sol-gel inks to achieve the fastest reported process for fabrication of inorganic CTLs for perovskites. By engineering precursor rheology for rapid film-leveling, NiOx HTLs were printed with high uniformity and ultralow pinhole densities resulting in photovoltaic performance exceeding that of spin-coated devices. Integrating these printed transport layers in planar inverted PSCs allows rapid fabrication of high efficiency (PCE > 15%) Cs(x)FA(1-x)PbI solar cells with improved short circuit currents (Jsc) of 22.4 mA/cm2. Rapid annealing of the HTL accelerates total processing time by 60X, while maintaining the required balance of optoelectronic properties and the chemical composition for effective hole collection. These results build an improved understanding of ultrathin NiOx and reveal opportunities to enhance device performance via scalable manufacturing of inorganic CTLs.
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Submitted 19 January, 2022;
originally announced January 2022.
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Realization of graphene logics in an exciton-enhanced insulating phase
Authors:
Kaining Yang,
Xiang Gao,
Yaning Wang,
Tongyao Zhang,
Pingfan Gu,
Zhaoping Luo,
Runjie Zheng,
Shimin Cao,
Hanwen Wang,
Xingdan Sun,
Kenji Watanabe,
Takashi Taniguchi,
Xiuyan Li,
Jing Zhang,
Xi Dai,
Jianhao Chen,
Yu Ye,
Zheng Vitto Han
Abstract:
For two decades, two-dimensional carbon species, including graphene, have been the core of research in pursuing next-generation logic applications beyond the silicon technology. Yet the opening of a gap in a controllable range of doping, whilst keeping high conductance outside of this gapped state, has remained a grand challenge in them thus far. Here we show that, by bringing Bernal-stacked bilay…
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For two decades, two-dimensional carbon species, including graphene, have been the core of research in pursuing next-generation logic applications beyond the silicon technology. Yet the opening of a gap in a controllable range of doping, whilst keeping high conductance outside of this gapped state, has remained a grand challenge in them thus far. Here we show that, by bringing Bernal-stacked bilayer graphene in contact with an anti-ferromagnetic insulator CrOCl, a strong insulating behavior is observed in a wide range of positive total electron doping $n_\mathrm{tot}$ and effective displacement field $D_\mathrm{eff}$ at low temperatures. Transport measurements further prove that such an insulating phase can be well described by the picture of an inter-layer excitonic state in bilayer graphene owing to electron-hole interactions. The consequential over 1 $\mathrm{GΩ}$ excitonic insulator can be readily killed by tuning $D_\mathrm{eff}$ and/or $n_\mathrm{tot}$, and the system recovers to a high mobility graphene with a sheet resistance of less than 100 $\mathrmΩ$. It thus yields transistors with "ON-OFF" ratios reaching 10$^{7}$, and a CMOS-like graphene logic inverter is demonstrated. Our findings of the robust insulating phase in bilayer graphene may be a leap forward to fertilize the future carbon computing.
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Submitted 6 October, 2021;
originally announced October 2021.
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Quantum Hall phase in graphene engineered by interfacial charge coupling
Authors:
Yaning Wang,
Xiang Gao,
Kaining Yang,
Pingfan Gu,
Xin Lu,
Shihao Zhang,
Yuchen Gao,
Naijie Ren,
Baojuan Dong,
Yuhang Jiang,
Kenji Watanabe,
Takashi Taniguchi,
Jun Kang,
Wenkai Lou,
Jinhai Mao,
Jianpeng Liu,
Yu Ye,
Zheng Vitto Han,
Kai Chang,
Jing Zhang,
Zhidong Zhang
Abstract:
Quantum Hall effect (QHE), the ground to construct modern conceptual electronic systems with emerging physics, is often much influenced by the interplay between the host two-dimensional electron gases and the substrate, sometimes predicted to exhibit exotic topological states. Yet the understanding of the underlying physics and the controllable engineering of this paradigm of interaction remain ch…
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Quantum Hall effect (QHE), the ground to construct modern conceptual electronic systems with emerging physics, is often much influenced by the interplay between the host two-dimensional electron gases and the substrate, sometimes predicted to exhibit exotic topological states. Yet the understanding of the underlying physics and the controllable engineering of this paradigm of interaction remain challenging. Here we demonstrate the observation of an unusual QHE, which differs markedly from the known picture, in graphene samples in contact with an anti-ferromagnetic insulator CrOCl equipped with dual gates. Owing to the peculiar interfacial coupling, Landau levels in monolayer graphene remain intact at negative filling fractions, but largely deviated for the positive gate-doping range. The latter QHE phase even presents in the limit of zero magnetic field, with the consequential Landau quantization following a parabolic relation between the displacement field $D$ and the magnetic field $B$. This characteristic prevails up to 100 K in a sufficiently wide effective doping range from 0 to 10$^{13}$ cm$^{-2}$. Our findings thus open up new routes for manipulating the quantum electronic states, which may find applications in such as quantum metrology.
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Submitted 25 September, 2022; v1 submitted 6 October, 2021;
originally announced October 2021.
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Long-range transport of 2D excitons with acoustic waves
Authors:
Ruoming Peng,
Adina Ripin,
Yusen Ye,
Jiayi Zhu,
Changming Wu,
Seokhyeong Lee,
Huan Li,
Takashi Taniguchi,
Kenji Watanabe,
Ting Cao,
Xiaodong Xu,
Mo Li
Abstract:
Excitons are elementary optical excitation in semiconductors. The ability to manipulate and transport these quasiparticles would enable excitonic circuits and devices for quantum photonic technologies. Recently, interlayer excitons in 2D semiconductors have emerged as a promising candidate for engineering excitonic devices due to their long lifetime, large exciton binding energy, and gate tunabili…
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Excitons are elementary optical excitation in semiconductors. The ability to manipulate and transport these quasiparticles would enable excitonic circuits and devices for quantum photonic technologies. Recently, interlayer excitons in 2D semiconductors have emerged as a promising candidate for engineering excitonic devices due to their long lifetime, large exciton binding energy, and gate tunability. However, the charge-neutral nature of the excitons leads to weak response to the in-plane electric field and thus inhibits transport beyond the diffusion length. Here, we demonstrate the directional transport of interlayer excitons in bilayer WSe2 driven by the propagating potential traps induced by surface acoustic waves (SAW). We show that at 100 K, the SAW-driven excitonic transport is activated above a threshold acoustic power and reaches 20 mm, a distance at least ten times longer than the diffusion length and only limited by the device size. Temperature-dependent measurement reveals the transition from the diffusion-limited regime at low temperature to the acoustic field-driven regime at elevated temperature. Our work shows that acoustic waves are an effective, contact-free means to control exciton dynamics and transport, promising for realizing 2D materials-based excitonic devices such as exciton transistors, switches, and transducers up to room temperature.
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Submitted 22 February, 2022; v1 submitted 3 August, 2021;
originally announced August 2021.
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Optically and magnetically addressable valley pseudospin of interlayer excitons in bilayer MoS2
Authors:
Yanchong Zhao,
Luojun Du,
Shiqi Yang,
Jinpeng Tian,
Xiaomei Li,
Cheng Shen,
Jian Tang,
Yanbang Chu,
Kenji Watanabe,
Takashi Taniguchi,
Rong Yang,
Dongxia Shi,
Zhipei Sun,
Yu Ye,
Wei Yang,
Guangyu Zhang
Abstract:
Interlayer valley excitons in bilayer MoS2 feature concurrently large oscillator strength and long lifetime, and hence represent an advantageous scenario for valleytronic applications. However, control of valley pseudospin of interlayer excitons in pristine bilayer MoS2, which lies at the heart of valleytronics, has remained elusive. Here we report the observation of highly circularly polarized ph…
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Interlayer valley excitons in bilayer MoS2 feature concurrently large oscillator strength and long lifetime, and hence represent an advantageous scenario for valleytronic applications. However, control of valley pseudospin of interlayer excitons in pristine bilayer MoS2, which lies at the heart of valleytronics, has remained elusive. Here we report the observation of highly circularly polarized photoluminescence from interlayer excitons of bilayer MoS2 with both optical and magnetic addressability. Under excitation of circularly polarized light near exciton resonance, interlayer excitons of bilayer MoS2 show a near-unity, but negative circular polarization. Significantly, by breaking time-reversal symmetry with an out-of-plane magnetic field, a record level of spontaneous valley polarization (7.7%/Tesla) is identified for interlayer excitons in bilayer MoS2. The giant valley polarization of the interlayer excitons in bilayer MoS2, together with the feasibility of electrical/optical/magnetic control and strong oscillator strength, provides a firm basis for the development of next-generation electronic and optoelectronic applications.
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Submitted 1 June, 2021;
originally announced June 2021.
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Floquet-Mode Traveling-Wave Parametric Amplifiers
Authors:
Kaidong Peng,
Mahdi Naghiloo,
Jennifer Wang,
Gregory D Cunningham,
Yufeng Ye,
Kevin P O'Brien
Abstract:
Simultaneous ideal quantum measurements of multiple single-photon-level signals would advance applications in quantum information processing, metrology, and astronomy, but require the first amplifier to be simultaneously broadband, quantum limited, and directional. However, conventional traveling-wave parametric amplifiers support broadband amplification at the cost of increased added noise and ar…
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Simultaneous ideal quantum measurements of multiple single-photon-level signals would advance applications in quantum information processing, metrology, and astronomy, but require the first amplifier to be simultaneously broadband, quantum limited, and directional. However, conventional traveling-wave parametric amplifiers support broadband amplification at the cost of increased added noise and are not genuinely directional due to non-negligible nonlinear backward wave generation. In this work, we introduce a new class of amplifiers which encode the information in the Floquet modes of the system. Such Floquet mode amplifiers prevent information leakage and overcome the trade-off between quantum efficiency (QE) and bandwidth. Crucially, Floquet mode amplifiers strongly suppress the nonlinear forward-backward wave coupling and are therefore genuinely directional and readily integrable with qubits, clearing another major obstacle towards broadband ideal quantum measurements. Furthermore, Floquet mode amplifiers are insensitive to out-of-band impedance mismatch, which otherwise may lead to gain ripples, parametric oscillations, and instability in conventional traveling-wave parametric amplifiers. Finally, we show that a Floquet mode Josephson traveling-wave parametric amplifier implementation can simultaneously achieve $>\!20\,$dB gain and a QE of $η/η_{\mathrm{ideal}}\!> 99.9\%$ of the quantum limit over more than an octave of bandwidth. The proposed Floquet scheme is also widely applicable to other platforms, such as kinetic inductance traveling-wave amplifiers and optical parametric amplifiers.
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Submitted 13 April, 2022; v1 submitted 16 April, 2021;
originally announced April 2021.
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Superconductivity above 200 K Observed in Superhydrides of Calcium
Authors:
Z. Li,
X. He,
C. L. Zhang,
X. C. Wang,
S. J. Zhang,
Y. T. Jia,
S. M. Feng,
K. Lu,
J. F. Zhao,
J. Zhang,
B. S. Min,
Y. W. Long,
R. C. Yu,
L. H. Wang,
M. Y. Ye,
Z. S. Zhang,
V. Prakapenka,
S. Chariton,
P. A. Ginsberg,
J. Bass,
S. H. Yuan,
H. Z. Liu,
C. Q. Jin
Abstract:
Searching for superconductivity with Tc near room temperature is of great interest both for fundamental science & many potential applications. Here we report the experimental discovery of superconductivity with maximum critical temperature (Tc) above 210 K in calcium superhydrides, the new alkali earth hydrides experimentally showing superconductivity above 200 K in addition to sulfur hydride & ra…
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Searching for superconductivity with Tc near room temperature is of great interest both for fundamental science & many potential applications. Here we report the experimental discovery of superconductivity with maximum critical temperature (Tc) above 210 K in calcium superhydrides, the new alkali earth hydrides experimentally showing superconductivity above 200 K in addition to sulfur hydride & rare-earth hydride system. The materials are synthesized at the synergetic conditions of 160~190 GPa and ~2000 K using diamond anvil cell combined with in-situ laser heating technique. The superconductivity was studied through in-situ high pressure electric conductance measurements in an applied magnetic field for the sample quenched from high temperature while maintained at high pressures. The upper critical field Hc(0) was estimated to be ~268 T while the GL coherent length is ~11 angstrom. The in-situ synchrotron X-ray diffraction measurements suggest that the synthesized calcium hydrides are primarily composed of CaH6 while there may also exist other calcium hydrides with different hydrogen contents.
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Submitted 9 June, 2022; v1 submitted 31 March, 2021;
originally announced March 2021.
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Roton pair density wave and unconventional strong-coupling superconductivity in a topological kagome metal
Authors:
Hui Chen,
Haitao Yang,
Bin Hu,
Zhen Zhao,
Jie Yuan,
Yuqing Xing,
Guojian Qian,
Zihao Huang,
Geng Li,
Yuhan Ye,
Sheng Ma,
Shunli Ni,
Hua Zhang,
Qiangwei Yin,
Chunsheng Gong,
Zhijun Tu,
Hechang Lei,
Hengxin Tan,
Sen Zhou,
Chengmin Shen,
Xiaoli Dong,
Binghai Yan,
Ziqiang Wang,
Hong-Jun Gao
Abstract:
The transition-metal kagome lattice materials host frustrated, correlated, and topological quantum states of matter. Recently, a new family of vanadium-based kagome metals AV3Sb5 (A=K, Rb, and Cs) with topological band structures has been discovered. These layered compounds are nonmagnetic and undergo charge density wave transitions before developing superconductivity at low temperatures. Here we…
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The transition-metal kagome lattice materials host frustrated, correlated, and topological quantum states of matter. Recently, a new family of vanadium-based kagome metals AV3Sb5 (A=K, Rb, and Cs) with topological band structures has been discovered. These layered compounds are nonmagnetic and undergo charge density wave transitions before developing superconductivity at low temperatures. Here we report the observation of unconventional superconductivity and pair density wave (PDW) in CsV3Sb5 using scanning tunneling microscope/spectroscopy (STM/STS) and Josephson STS. We find that CsV3Sb5 exhibits a V-shaped pairing gap Δ~0.5 meV and is a strong-coupling superconductor (2Δ/kBTc~5) that coexists with 4a0 unidirectional and 2a0X2a0 charge order. Remarkably, we discover a 3Q PDW accompanied by bidirectional 4a0/3 spatial modulations of the superconducting gap, coherence peak and gap-depth in the tunneling conductance. We term this novel quantum state a roton-PDW associated with an underlying vortex-antivortex lattice that can account for the observed conductance modulations. Probing the electronic states in the vortex halo in an applied magnetic field, in strong-field that suppresses superconductivity, and in zero-field above Tc reveals that the PDW is a primary state responsible for an emergent pseudogap and intertwined electronic order. Our findings show striking analogies and distinctions to the phenomenology of high-Tc cuprate superconductors, and provide groundwork for understanding the microscopic origin of correlated electronic states and superconductivity in vanadium-based kagome metals.
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Submitted 30 September, 2021; v1 submitted 16 March, 2021;
originally announced March 2021.
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Experimental characterization of quantum many-body localization transition
Authors:
Ming Gong,
Gentil D. de Moraes Neto,
Chen Zha,
Yulin Wu,
Hao Rong,
Yangsen Ye,
Shaowei Li,
Qingling Zhu,
Shiyu Wang,
Youwei Zhao,
Futian Liang,
Jin Lin,
Yu Xu,
Cheng-Zhi Peng,
Hui Deng,
Abolfazl Bayat,
Xiaobo Zhu,
Jian-Wei Pan
Abstract:
As strength of disorder enhances beyond a threshold value in many-body systems, a fundamental transformation happens through which the entire spectrum localizes, a phenomenon known as many-body localization. This has profound implications as it breaks down fundamental principles of statistical mechanics, such as thermalization and ergodicity. Due to the complexity of the problem, the investigation…
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As strength of disorder enhances beyond a threshold value in many-body systems, a fundamental transformation happens through which the entire spectrum localizes, a phenomenon known as many-body localization. This has profound implications as it breaks down fundamental principles of statistical mechanics, such as thermalization and ergodicity. Due to the complexity of the problem, the investigation of the many-body localization transition has remained a big challenge. The experimental exploration of the transition point is even more challenging as most of the proposed quantities for studying such effect are practically infeasible. Here, we experimentally implement a scalable protocol for detecting the many-body localization transition point, using the dynamics of a $N=12$ superconducting qubit array. We show that the sensitivity of the dynamics to random samples becomes maximum at the transition point which leaves its fingerprints in all spatial scales. By exploiting three quantities, each with different spatial resolution, we identify the transition point with excellent match between simulation and experiment. In addition, one can detect the evidence of mobility edge through slight variation of the transition point as the initial state varies. The protocol is easily scalable and can be performed across various physical platforms.
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Submitted 21 December, 2020;
originally announced December 2020.
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Ultra-efficient magnetism modulation in a Weyl ferromagnet by current-assisted domain wall motion
Authors:
Qiuyuan Wang,
Yi Zeng,
Kai Yuan,
Qingqi Zeng,
Pingfan Gu,
Xiaolong Xu,
Hanwen Wang,
Zheng Han,
Kentaro Nomura,
Wenhong Wang,
Enke Liu,
Yanglong Hou,
Yu Ye
Abstract:
Flexible and efficient manipulation of magnetic configurations can be challenging. In the design of practical devices, achieving a high effective magnetic field with a low working current is under tight demand. Here, we report a unique method for efficient magnetism modulation by direct current injection in magnetic Weyl semimetal Co3Sn2S2. We demonstrate that the modulation process stems from cur…
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Flexible and efficient manipulation of magnetic configurations can be challenging. In the design of practical devices, achieving a high effective magnetic field with a low working current is under tight demand. Here, we report a unique method for efficient magnetism modulation by direct current injection in magnetic Weyl semimetal Co3Sn2S2. We demonstrate that the modulation process stems from current-assisted domain wall motion. Through two independent methods, we reveal that the spin-transfer torque efficiency of Co3Sn2S2 reaches as high as 2.4-5.6 kOe MA^(-1) cm^2, and the threshold current density for driving the magnetic domain walls is as low as <5.1*10^5 A/cm^2 without an external field, and <1.5*10^5 A/cm^2 with a moderate external field. Our findings manifest a new and powerful approach for sub-micron magnetism manipulation, and also open the door towards a new paradigm of spintronics that combines magnetism, topology, and metallicity for low-energy consumption memory and computing.
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Submitted 17 March, 2022; v1 submitted 16 November, 2020;
originally announced November 2020.
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Odd-even layer-number effect and layer-dependent magnetic phase diagrams in MnBi2Te4
Authors:
Shiqi Yang,
Xiaolong Xu,
Yaozheng Zhu,
Ruirui Niu,
Chunqiang Xu,
Yuxuan Peng,
Xing Cheng,
Xionghui Jia,
Xiaofeng Xu,
Jianming Lu,
Yu Ye
Abstract:
The intrinsic magnetic layered topological insulator MnBi2Te4 with nontrivial topological properties and magnetic order has become a promising system for exploring exotic quantum phenomena such as quantum anomalous Hall effect. However, the layer-dependent magnetism of MnBi2Te4, which is fundamental and crucial for further exploration of quantum phenomena in this system, remains elusive. Here, we…
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The intrinsic magnetic layered topological insulator MnBi2Te4 with nontrivial topological properties and magnetic order has become a promising system for exploring exotic quantum phenomena such as quantum anomalous Hall effect. However, the layer-dependent magnetism of MnBi2Te4, which is fundamental and crucial for further exploration of quantum phenomena in this system, remains elusive. Here, we use polar reflective magnetic circular dichroism spectroscopy, combined with theoretical calculations, to obtain an in-depth understanding of the layer-dependent magnetic properties in MnBi2Te4. The magnetic behavior of MnBi2Te4 exhibits evident odd-even layer-number effect, i.e. the oscillations of the coercivity of the hysteresis loop (at μ0Hc) and the spin-flop transition (at μ0H1), concerning the Zeeman energy and magnetic anisotropy energy. In the even-number septuple layers, an anomalous magnetic hysteresis loop is observed, which is attributed to the thickness-independent surface-related magnetization. Through the linear-chain model, we can clarify the odd-even effect of the spin-flop field and determine the evolution of magnetic states under the external magnetic field. The mean-field method also allows us to trace the experimentally observed magnetic phase diagrams to the magnetic fields, layer numbers and especially, temperature. Overall, by harnessing the unusual layer-dependent magnetic properties, our work paves the way for further study of quantum properties of MnBi2Te4.
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Submitted 12 June, 2020;
originally announced June 2020.
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Spin-Valley Locking Effect in Defect States of Monolayer MoS$_2$
Authors:
Yaqian Wang,
Longjiang Deng,
Qilin Wei,
Yi Wan,
Zhen Liu,
Xiao Lu,
Yue Li,
Lei Bi,
Li Zhang,
Haipeng Lu,
Haiyan Chen,
Peiheng Zhou,
Linbo Zhang,
Yingchun Cheng,
Xiaoxu Zhao,
Yu Ye,
Wei Huang,
Stephen J. Pennycook,
Kian Ping Loh,
Bo Peng
Abstract:
Valley pseudospin in two-dimensional (2D) transition-metal dichalcogenides (TMDs) allows optical control of spin-valley polarization and intervalley quantum coherence. Defect states in TMDs give rise to new exciton features and theoretically exhibit spin-valley polarization; however, experimental achievement of this phenomenon remains challenges. Here, we report unambiguous valley pseudospin of de…
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Valley pseudospin in two-dimensional (2D) transition-metal dichalcogenides (TMDs) allows optical control of spin-valley polarization and intervalley quantum coherence. Defect states in TMDs give rise to new exciton features and theoretically exhibit spin-valley polarization; however, experimental achievement of this phenomenon remains challenges. Here, we report unambiguous valley pseudospin of defect-bound localized excitons in CVD-grown monolayer MoS2; enhanced valley Zeeman splitting with an effective g-factor of -6.2 is observed. Our results reveal that all five d-orbitals and the increased effective electron mass contribute to the band shift of defect states, demonstrating a new physics of the magnetic responses of defect-bound localized excitons, strikingly different from that of A excitons. Our work paves the way for the manipulation of the spin-valley degrees of freedom through defects toward valleytronic devices.
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Submitted 21 February, 2020;
originally announced February 2020.
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Ergodic-localized junctions in a periodically-driven spin chain
Authors:
Chen Zha,
V. M. Bastidas,
Ming Gong,
Yulin Wu,
Hao Rong,
Rui Yang,
Yangsen Ye,
Shaowei Li,
Qingling Zhu,
Shiyu Wang,
Youwei Zhao,
Futian Liang,
Jin Lin,
Yu Xu,
Cheng-Zhi Peng,
Jorg Schmiedmayer,
Kae Nemoto,
Hui Deng,
W. J. Munro,
Xiaobo Zhu,
Jian-Wei Pan
Abstract:
We report the analogue simulation of an ergodiclocalized junction by using an array of 12 coupled superconducting qubits. To perform the simulation, we fabricated a superconducting quantum processor that is divided into two domains: a driven domain representing an ergodic system, while the second is localized under the effect of disorder. Due to the overlap between localized and delocalized states…
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We report the analogue simulation of an ergodiclocalized junction by using an array of 12 coupled superconducting qubits. To perform the simulation, we fabricated a superconducting quantum processor that is divided into two domains: a driven domain representing an ergodic system, while the second is localized under the effect of disorder. Due to the overlap between localized and delocalized states, for small disorder there is a proximity effect and localization is destroyed. To experimentally investigate this, we prepare a microwave excitation in the driven domain and explore how deep it can penetrate the disordered region by probing its dynamics. Furthermore, we performed an ensemble average over 50 realizations of disorder, which clearly shows the proximity effect. Our work opens a new avenue to build quantum simulators of driven-disordered systems with applications in condensed matter physics and material science
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Submitted 27 February, 2020; v1 submitted 24 January, 2020;
originally announced January 2020.
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Correlating the Electronic Structures of Metallic/Semiconductor MoTe2 Interface to its Atomic Structures
Authors:
Bo Han,
Chen Yang,
Xiaolong Xu,
Yuehui Li,
Ruochen Shi,
Kaihui Liu,
Haicheng Wang,
Yu Ye,
Jing Lu,
Dapeng Yu,
Peng Gao
Abstract:
Contact interface properties are important in determining the performances of devices based on atomically thin two-dimensional (2D) materials, especially those with short channels. Understanding the contact interface is therefore quite important to design better devices. Herein, we use scanning transmission electron microscopy, electron energy loss spectroscopy, and first-principles calculations t…
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Contact interface properties are important in determining the performances of devices based on atomically thin two-dimensional (2D) materials, especially those with short channels. Understanding the contact interface is therefore quite important to design better devices. Herein, we use scanning transmission electron microscopy, electron energy loss spectroscopy, and first-principles calculations to reveal the electronic structures within the metallic (1T')-semiconducting (2H) MoTe2 coplanar phase boundary across a wide spectral range and correlate its properties and atomic structure. We find that the 2H-MoTe2 excitonic peaks cross the phase boundary into the 1T' phase within a range of approximately 150 nm. The 1T'-MoTe2 crystal field can penetrate the boundary and extend into the 2H phase by approximately two unit cells. The plasmonic oscillations exhibit strong angle dependence, i.e., a red-shift (approximately 0.3 eV-1.2 eV) occurs within 4 nm at 1T'/2H-MoTe2 boundaries with large tilt angles, but there is no shift at zero-tilted boundaries. These atomic-scale measurements reveal the structure-property relationships of 1T'/2H-MoTe2 boundary, providing useful information for phase boundary engineering and device development based on 2D materials.
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Submitted 22 November, 2019;
originally announced November 2019.
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Observation of Fano resonance in photoluminescence of a two-dimensional magnetic semiconductor
Authors:
Pingfan Gu,
Qinghai Tan,
Yi Wan,
Ziling Li,
Yuxuan Peng,
Jiawei Lai,
Junchao Ma,
Xiaohan Yao,
Kai Yuan,
Dong Sun,
Bo Peng,
Jun Zhang,
Yu Ye
Abstract:
Quantum interference gives rise to the asymmetric Fano resonance line shape when the final states of an electronic transition follows within a continuum of states and a discrete state, which has significant applications in optical switching and sensing. The resonant optical phenomena associated with Fano resonance have been observed by absorption spectra, Raman spectra, transmission spectra, etc.,…
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Quantum interference gives rise to the asymmetric Fano resonance line shape when the final states of an electronic transition follows within a continuum of states and a discrete state, which has significant applications in optical switching and sensing. The resonant optical phenomena associated with Fano resonance have been observed by absorption spectra, Raman spectra, transmission spectra, etc., but have rarely been reported in photoluminescence (PL) spectroscopy. In this work, we performed spectroscopic studies on layered chromium thiophosphate (CrPS4), a promising ternary antiferromagnetic semiconductor with PL in near-infrared wavelength region and observed Fano resonance when CrPS4 experiences phase transition into the antiferromagnetic state below Néel temperature (38 K). The photoluminescence of the continuum states results from the d band transitions localized at Cr3+ ions, while the discrete state reaches saturation at high excitation power and can be enhanced by the external magnetic field, suggesting it is formed by an impurity level from extra atomic phosphorus. Our findings provide insights into the electronic transitions of CrPS4 and their connection to its intrinsic magnetic properties.
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Submitted 11 October, 2019;
originally announced October 2019.
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Passive network evolution promotes group welfare in complex networks
Authors:
Ye Ye,
Xiao Rong Hang,
Jin Ming Koh,
Jarosław Adam Miszczak,
Kang Hao Cheong,
Neng-gang Xie
Abstract:
The Parrondo's paradox is a counterintuitive phenomenon in which individually losing strategies, canonically termed game A and game B, are combined to produce winning outcomes. In this paper, a co-evolution of game dynamics and network structure is adopted to study adaptability and survivability in multi-agent dynamics. The model includes action A, representing a rewiring process on the network, a…
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The Parrondo's paradox is a counterintuitive phenomenon in which individually losing strategies, canonically termed game A and game B, are combined to produce winning outcomes. In this paper, a co-evolution of game dynamics and network structure is adopted to study adaptability and survivability in multi-agent dynamics. The model includes action A, representing a rewiring process on the network, and a two-branch game B, representing redistributive interactions between agents. Simulation results indicate that stochastically mixing action A and game B can produce enhanced, and even winning outcomes, despite gameB being individually losing. In other words, a Parrondo-type paradox can be achieved, but unlike canonical variants, the source of agitation is provided by passive network evolution instead of an active second game. The underlying paradoxical mechanism is analyzed, revealing that the rewiring process drives a topology shift from initial regular lattices towards scale-free characteristics, and enables exploitative behavior that grants enhanced access to the favourable branch of game B.
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Submitted 10 October, 2019;
originally announced October 2019.
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Scaling-up atomically thin coplanar semiconductor-metal circuitry via phase engineered chemical assembly
Authors:
Xiaolong Xu,
Shuai Liu,
Bo Han,
Yimo Han,
Wanjin Xu,
Xiaohan Yao,
Kai Yuan,
Pan Li,
Shiqi Yang,
Wenting Gong,
David A. Muller,
Peng Gao,
Yu Ye,
Lun Dai
Abstract:
Two-dimensional (2D) layered semiconductors, with their ultimate atomic thickness, have shown promise to scale down transistors for modern integrated circuitry. However, the electrical contacts that connect these materials with external bulky metals are usually unsatisfactory, which limits the transistor performance. Recently, contacting 2D semiconductors using coplanar 2D conductors has shown pro…
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Two-dimensional (2D) layered semiconductors, with their ultimate atomic thickness, have shown promise to scale down transistors for modern integrated circuitry. However, the electrical contacts that connect these materials with external bulky metals are usually unsatisfactory, which limits the transistor performance. Recently, contacting 2D semiconductors using coplanar 2D conductors has shown promise in reducing the problematic high resistance contacts. However, many of these methods are not ideal for scaled production. Here, we report on the large-scale, spatially controlled chemical assembly of the integrated 2H-MoTe2 field-effect transistors (FETs) with coplanar metallic 1T' MoTe2 contacts via phase engineered approaches. We demonstrate that the heterophase FETs exhibit ohmic contact behavior with low contact resistance, resulting from the coplanar seamless contact between 2H and 1T' MoTe2 confirmed by transmission electron microscopy characterizations. The average mobility of the heterophase FETs was measured to be as high as 23 cm2 V-1 s-1 (comparable with those of exfoliated single crystals), due to the large 2H MoTe2 single-crystalline domain (486μm). By developing a patterned growth method, we realize the 1T' MoTe2 gated heterophase FET array whose components of channel, gate, and contacts are all 2D materials. Finally, we transfer the heterophase device array onto a flexible substrate and demonstrate the near-infrared photoresponse with high photoresponsivity (~1.02 A/W). Our study provides a basis for the large-scale application of phase-engineered coplanar MoTe2 semiconductors-meter structure in advanced electronics and optoelectronics.
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Submitted 17 April, 2019;
originally announced April 2019.
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Selective scattering of blue and red light based on silver and gold nanocubes
Authors:
Yiyang Ye,
Tupei Chen
Abstract:
Selective scattering of red-, green- and blue-light and transmitting other visible light to achieve transparent projection screen has been proposed recently based on metallic nanoparticle's localized surface plasmon resonance (LSPR). However, dielectric (TiO2) substrate/silver (Ag) nanocube structure was only demonstrated to selectively scatter blue-light in the backward direction. Given human eye…
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Selective scattering of red-, green- and blue-light and transmitting other visible light to achieve transparent projection screen has been proposed recently based on metallic nanoparticle's localized surface plasmon resonance (LSPR). However, dielectric (TiO2) substrate/silver (Ag) nanocube structure was only demonstrated to selectively scatter blue-light in the backward direction. Given human eyes are sensitive to green-light, it is of interest to find out how to achieve selective forward-scattering of blue- and red-light and selective backward-scattering of red-light. In this work, through numerical simulation, forward and backward scattering properties of dielectric substrate/Ag (or gold) nanocube structures are investigated. And based on these properties, three designs are proposed which can achieve selective scattering of blue- and red-light in forward or backward or both directions.
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Submitted 25 January, 2019;
originally announced January 2019.
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Gate tunable giant anisotropic resistance in ultra-thin GaTe
Authors:
Hanwen Wang,
Mao-Lin Chen,
Mengjian Zhu,
Yaning Wang,
Baojuan Dong,
Xingdan Sun,
Xiaorong Zhang,
Shimin Cao,
Xiaoxi Li,
Jianqi Huang,
Lei Zhang,
Weilai Liu,
Dongming Sun,
Yu Ye,
Teng Yang,
Huaihong Guo,
Chengbing Qin,
Liantuan Xiao,
Jing Zhang,
Jianhao Chen,
Zheng Vitto Han,
Zhidong Zhang
Abstract:
In crystals, the duplication of atoms often follows different periodicity along different directions. It thus gives rise to the so called anisotropy, which is usually even more pronounced in two dimensional (2D) materials due to the absence of $\textbf{z}$ dimension. Indeed, in the emerging 2D materials, electrical anisotropy has been one of the focuses in recent experimental efforts. However, key…
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In crystals, the duplication of atoms often follows different periodicity along different directions. It thus gives rise to the so called anisotropy, which is usually even more pronounced in two dimensional (2D) materials due to the absence of $\textbf{z}$ dimension. Indeed, in the emerging 2D materials, electrical anisotropy has been one of the focuses in recent experimental efforts. However, key understandings of the in-plane anisotropic resistance in low-symmetry 2D materials, as well as demonstrations of model devices taking advantage of it, have proven difficult. Here, we show that, in few-layered semiconducting GaTe, electrical conductivity along $\textbf{x}$ and $\textbf{y}$ directions of the 2D crystal can be gate tuned from a ratio of less than one order to as large as 10$^{3}$. This effect is further demonstrated to yield an anisotropic memory resistor behaviour in ultra-thin GaTe, when equipped with an architecture of van der Waals floating gate. Our findings of gate tunable giant anisotropic resistance (GAR) effect pave the way for potential applications in nano-electronics such as multifunctional directional memories in the 2D limit.
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Submitted 14 January, 2019;
originally announced January 2019.