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PreSET: improving performance of phase change memories by exploiting asymmetry in write times

Published: 09 June 2012 Publication History

Abstract

Phase Change Memory (PCM) is a promising technology for building future main memory systems. A prominent characteristic of PCM is that it has write latency much higher than read latency. Servicing such slow writes causes significant contention for read requests. For our baseline PCM system, the slow writes increase the effective read latency by almost 2X, causing significant performance degradation.
This paper alleviates the problem of slow writes by exploiting the fundamental property of PCM devices that writes are slow only in one direction (SET operation) and are almost as fast as reads in the other direction (RESET operation). Therefore, a write operation to a line in which all memory cells have been SET prior to the write, will incur much lower latency. We propose PreSET, an architectural technique that leverages this property to pro-actively SET all the bits in a given memory line well in advance of the anticipated write to that memory line. Our proposed design initiates a PreSET request for a memory line as soon as that line becomes dirty in the cache, thereby allowing a large window of time for the PreSET operation to complete. Our evaluations show that PreSET is more effective and incurs lower storage overhead than previously proposed write cancellation techniques. We also describe static and dynamic throttling schemes to limit the rate of PreSET operations. Our proposal reduces effective read latency from 982 cycles to 594 cycles and increases system performance by 34%, while improving the energy-delay-product by 25%.

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  • (2023)DTC: A Drift-Tolerant Coding to Improve the Performance and Energy Efficiency of -Level-Cell Phase-Change MemoryIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems10.1109/TCAD.2023.324156342:10(3185-3195)Online publication date: 1-Feb-2023
  • (2023)Memory Carousel: LLVM-Based Bitwise Wear Leveling for Nonvolatile Main MemoryIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems10.1109/TCAD.2022.322889742:8(2527-2539)Online publication date: 1-Aug-2023
  • (2023)Energy Efficiency Enhancement of SCM-Based Systems: Write-Friendly CodingIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems10.1109/TCAD.2022.320423142:5(1425-1437)Online publication date: 1-May-2023
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  1. PreSET: improving performance of phase change memories by exploiting asymmetry in write times

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    Published In

    cover image ACM SIGARCH Computer Architecture News
    ACM SIGARCH Computer Architecture News  Volume 40, Issue 3
    ISCA '12
    June 2012
    559 pages
    ISSN:0163-5964
    DOI:10.1145/2366231
    Issue’s Table of Contents
    • cover image ACM Conferences
      ISCA '12: Proceedings of the 39th Annual International Symposium on Computer Architecture
      June 2012
      584 pages
      ISBN:9781450316422
    Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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    Publication History

    Published: 09 June 2012
    Published in SIGARCH Volume 40, Issue 3

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    • (2023)DTC: A Drift-Tolerant Coding to Improve the Performance and Energy Efficiency of -Level-Cell Phase-Change MemoryIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems10.1109/TCAD.2023.324156342:10(3185-3195)Online publication date: 1-Feb-2023
    • (2023)Memory Carousel: LLVM-Based Bitwise Wear Leveling for Nonvolatile Main MemoryIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems10.1109/TCAD.2022.322889742:8(2527-2539)Online publication date: 1-Aug-2023
    • (2023)Energy Efficiency Enhancement of SCM-Based Systems: Write-Friendly CodingIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems10.1109/TCAD.2022.320423142:5(1425-1437)Online publication date: 1-May-2023
    • (2023)OML-PCM: An Optical Multi-Level Phase Change Memory Architecture for Embedded Computing SystemsEngineering Research Express10.1088/2631-8695/ad0fc4Online publication date: 24-Nov-2023
    • (2023)A survey on techniques for improving Phase Change Memory (PCM) lifetimeJournal of Systems Architecture10.1016/j.sysarc.2023.103008144(103008)Online publication date: Nov-2023
    • (2022)HydraProceedings of the 2022 Conference & Exhibition on Design, Automation & Test in Europe10.5555/3539845.3540080(1017-1022)Online publication date: 14-Mar-2022
    • (2022)Hydra: A near hybrid memory accelerator for CNN inference2022 Design, Automation & Test in Europe Conference & Exhibition (DATE)10.23919/DATE54114.2022.9774636(1017-1022)Online publication date: 14-Mar-2022
    • (2022)Architecting Optically Controlled Phase Change MemoryACM Transactions on Architecture and Code Optimization10.1145/353325219:4(1-26)Online publication date: 7-Dec-2022
    • (2022)Drift-tolerant Coding to Enhance the Energy Efficiency of Multi-Level-Cell Phase-Change MemoryProceedings of the ACM/IEEE International Symposium on Low Power Electronics and Design10.1145/3531437.3539701(1-6)Online publication date: 1-Aug-2022
    • (2022)Don't open rowProceedings of the 59th ACM/IEEE Design Automation Conference10.1145/3489517.3530540(823-828)Online publication date: 10-Jul-2022
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